CN109031534B - Thermal tuning grating coupler - Google Patents
Thermal tuning grating coupler Download PDFInfo
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- CN109031534B CN109031534B CN201810991059.XA CN201810991059A CN109031534B CN 109031534 B CN109031534 B CN 109031534B CN 201810991059 A CN201810991059 A CN 201810991059A CN 109031534 B CN109031534 B CN 109031534B
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- grating
- grating coupler
- heating platform
- silicon
- shallow
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 11
- 238000010168 coupling process Methods 0.000 abstract description 11
- 238000005859 coupling reaction Methods 0.000 abstract description 11
- 239000002210 silicon-based material Substances 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 239000012774 insulation material Substances 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 22
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/34—Optical coupling means utilising prism or grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a thermal tuning grating coupler which comprises a silicon substrate, an oxygen burying layer arranged on the silicon substrate, a shallow etching silicon heating platform arranged on the oxygen burying layer, an inclined incident grating arranged on the shallow etching silicon heating platform, and a micro heater arranged on the oxygen burying layer and used for heating the shallow etching silicon heating platform and the inclined incident grating. The scheme provided by the invention abandons the traditional mode of preparing the micro-heater on the thermal insulation material, greatly improves the heating efficiency of the grating coupler and further improves the coupling bandwidth of the grating coupler. Because the silicon material has a larger heat conduction coefficient, the thermal isolation groove is arranged right below the optical coupler, so that heat can be effectively prevented from being dissipated through the substrate, the energy consumption of the grating coupler is greatly reduced, and the thermal tuning efficiency is improved.
Description
Technical Field
The invention relates to the technical field of silicon-based photoelectronics, in particular to a thermally tuned grating coupler.
Background
A grating coupler is used as an input/output (input/output) optical device for coupling an optical waveguide to the surface of an optical fiber, and coupling an interlayer optical waveguide and an optical waveguide on the same chip or between two different chips. The grating coupler can realize the functions of high-density interconnection, two-dimensional input and output from the surface of a silicon chip, multi-wavelength operation, wafer testing and boxing before wafer cutting and the like. The preparation method is completely compatible with the CMOS process, and can be used for large-scale high-density batch production.
Over the past several decades, various ways of improving the coupling efficiency of grating couplers have been studied, such as making a shallow etched grating, making a metal reflective layer on the bottom of the grating, and covering the top of the grating with a polysilicon cladding. But in regions that are far from the center wavelength, the coupling efficiency drops much due to mode mismatch. Limiting their use in broad spectrum, Wavelength Division Multiplexed (WDM), C-band, and L-band applications.
Disclosure of Invention
The invention provides a thermally tuned grating coupler, aiming at solving the technical defect that the mode mismatch coupling efficiency is reduced in the region of the grating coupler far away from the central wavelength in the prior art.
In order to realize the purpose, the technical scheme is as follows:
a thermal tuning grating coupler comprises a silicon substrate, an oxygen burying layer arranged on the silicon substrate, a shallow etching silicon heating platform arranged on the oxygen burying layer, an inclined incident grating arranged on the shallow etching silicon heating platform, and a micro-heater arranged on the oxygen burying layer and used for heating the shallow etching silicon heating platform and the inclined incident grating.
According to the coupling theory of the grating coupler, the central wavelength of the grating coupler is related to the effective refractive index of the grating coupler, and the silicon material has a large thermo-optic coefficient, so that the refractive index of the grating coupler can be changed by directly applying heat to the grating coupler through a shallow etching silicon heating platform and a micro heater, and further the central wavelength of the grating coupler can be changed. The scheme of the invention abandons the traditional mode of preparing the micro heater on the thermal insulation material, greatly improves the heating efficiency of the grating coupler, and further improves the coupling bandwidth of the grating coupler in a region far away from the central wavelength.
Preferably, an insulating layer is laid on the top surface of the oxygen burying layer, the top surface of the shallow etching silicon heating platform and the top surface of the inclined incidence grating, and the micro heater is arranged on the insulating layer. The invention adopts a heating mode of growing a very thin insulating layer with higher heat conductivity on the silicon material to provide heat, thereby greatly improving the heat efficiency.
Preferably, the insulating layer is an alumina insulating layer.
Preferably, the middle part of the silicon substrate is hollowed; and the oxygen burying layer is provided with a plurality of deep etching grooves for hollowing the middle part of the silicon substrate.
Furthermore, the plurality of deep etching grooves are formed in the periphery of the position, where the shallow etching silicon heating platform is located, of the buried oxide layer.
Because the silicon material has a larger heat conduction coefficient, the thermal isolation groove is hollowed under the grating coupler, so that the heat can be effectively prevented from being dissipated through the silicon substrate, the energy consumption of the grating coupler is greatly reduced, and the thermal tuning efficiency is improved.
Preferably, the number of the deep etching grooves is 6, and the 6 deep etching grooves are sequentially arranged around the shallow etching silicon heating platform; a cantilever supporting beam is arranged between any two adjacent deep etching grooves and used for supporting the shallow etching silicon heating platform and the inclined incident grating.
Preferably, the oblique incidence grating is connected with a ridge waveguide, and the ridge waveguide is connected with a strip waveguide.
Compared with the prior art, the invention has the beneficial effects that:
the scheme provided by the invention abandons the traditional mode of preparing the micro-heater on the thermal insulation material, greatly improves the heating efficiency of the grating coupler and further improves the coupling bandwidth of the grating coupler. Because the silicon material has a larger heat conduction coefficient, the thermal isolation groove is arranged right below the optical coupler, so that heat can be effectively prevented from being dissipated through the substrate, the energy consumption of the grating coupler is greatly reduced, and the thermal tuning efficiency is improved.
Drawings
Fig. 1 is a perspective view of a thermally tuned grating coupler.
Figure 2 is a top view of a thermally tuned grating coupler.
Fig. 3 is a cross-sectional view a-a' of fig. 1.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent;
the invention is further illustrated below with reference to the figures and examples.
Example 1
As shown in fig. 1, 2 and 3, a thermally tuned grating coupler comprises a silicon substrate 1, a buried oxide layer 2 arranged on the silicon substrate 1, a shallow etched silicon heating platform 6 arranged on the buried oxide layer 2, an inclined incident grating 9 arranged on the shallow etched silicon heating platform 6, and micro-heaters 10 and 11 arranged on the buried oxide layer 2 and used for heating the shallow etched silicon heating platform 6 and the inclined incident grating 9; the inclined incidence grating 9 is connected with a ridge waveguide 7, and the ridge waveguide 7 is connected with a strip waveguide 8.
According to the coupling theory of the grating coupler, the center wavelength of the grating coupler is related to the effective refractive index of the grating coupler, and the silicon material has a large thermo-optic coefficient, so that the refractive index of the grating coupler can be changed by directly applying heat to the grating coupler through the shallow etching silicon heating platform 6 and the micro heaters 10 and 11, and the center wavelength of the grating coupler can be further changed. The scheme of the embodiment abandons the traditional mode of preparing the micro-heaters 10 and 11 on the thermal insulation material, greatly improves the heating efficiency of the grating coupler, and further improves the coupling bandwidth of the grating coupler in the region far away from the central wavelength.
Example 2
In this embodiment, on the basis of embodiment 1, an insulating layer 3 is laid on the top surface of the buried oxide layer 2, the top surface of the shallow-etched silicon heating platform 6, and the top surface of the oblique incident light grid 9, and the micro-heaters 10 and 11 are disposed on the insulating layer 3. In the embodiment, a thin insulating layer 3 with high thermal conductivity is grown on a silicon material to provide heat in a heating mode, so that the thermal efficiency is greatly improved.
More specifically, the insulating layer 3 is an alumina insulating layer.
Example 3
In this embodiment, on the basis of embodiment 1 or embodiment 2, the middle part of the silicon substrate 1 is hollowed; the buried oxide layer 2 is provided with a plurality of deep etching grooves 4 for hollowing out the middle part of the silicon substrate 1. The number of the deep etching grooves 4 is 6, and the 6 deep etching grooves 4 are sequentially arranged around the shallow etching silicon heating platform 6; a cantilever supporting beam 5 is arranged between any two adjacent deep etching grooves 4 and is used for supporting a shallow etching silicon heating platform 6 and an inclined incident light grid 9.
Because the silicon material has a larger heat conduction coefficient, the thermal isolation groove is hollowed under the grating coupler, so that heat can be effectively prevented from being dissipated through the silicon substrate 1, the energy consumption of the grating coupler is greatly reduced, and the thermal tuning efficiency is improved.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (4)
1. A thermally tuned grating coupler, characterized by: the micro-heater comprises a silicon substrate, an oxygen burying layer arranged on the silicon substrate, a shallow etching silicon heating platform arranged on the oxygen burying layer, an inclined incident grating arranged on the shallow etching silicon heating platform, and a micro-heater arranged on the oxygen burying layer and used for heating the shallow etching silicon heating platform and the inclined incident grating;
an insulating layer is laid on the top surface of the oxygen burying layer, the top surface of the shallow etching silicon heating platform and the top surface of the inclined incidence grating, and the micro heater is arranged on the insulating layer;
the insulating layer is an alumina insulating layer;
the middle part of the silicon substrate is hollowed; and the oxygen burying layer is provided with a plurality of deep etching grooves for hollowing the middle part of the silicon substrate.
2. The thermally tuned grating coupler of claim 1, wherein: the plurality of deep etching grooves are formed in the periphery of the position of the shallow etching silicon heating platform on the oxygen burying layer.
3. The thermally tuned grating coupler of claim 2, wherein: the number of the deep etching grooves is 6, and the 6 deep etching grooves are sequentially arranged around the shallow etching silicon heating platform; a cantilever supporting beam is arranged between any two adjacent deep etching grooves and used for supporting the shallow etching silicon heating platform and the inclined incident grating.
4. The thermally tuned grating coupler of claim 2, wherein: the oblique incident light grating is connected with a ridge waveguide, and the ridge waveguide is connected with a strip waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810991059.XA CN109031534B (en) | 2018-08-28 | 2018-08-28 | Thermal tuning grating coupler |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810991059.XA CN109031534B (en) | 2018-08-28 | 2018-08-28 | Thermal tuning grating coupler |
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| Publication Number | Publication Date |
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| CN109031534A CN109031534A (en) | 2018-12-18 |
| CN109031534B true CN109031534B (en) | 2020-08-11 |
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| US11287719B2 (en) * | 2020-07-07 | 2022-03-29 | Globalfoundries U.S. Inc. | Tunable grating couplers containing a material with a variable refractive index |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100392476C (en) * | 2002-06-28 | 2008-06-04 | 日本电气株式会社 | Thermophotometric phase shifter and method for fabricating the same |
| CN105759350A (en) * | 2015-07-03 | 2016-07-13 | 苏州峰通光电有限公司 | Organic-inorganic hybrid integrated thermo-optical modulation type grating and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11281836A (en) * | 1998-03-31 | 1999-10-15 | Minolta Co Ltd | Production of grating element |
| CN1424602A (en) * | 2003-01-10 | 2003-06-18 | 中国科学院上海光学精密机械研究所 | Adjustable optical fibre polarizer and production thereof |
| US7133582B1 (en) * | 2003-12-04 | 2006-11-07 | Behzad Moslehi | Fiber-optic filter with tunable grating |
| KR100783363B1 (en) * | 2006-09-29 | 2007-12-07 | 한국전자통신연구원 | Tunable waveguide bragg grating device |
| CN102565955B (en) * | 2012-01-16 | 2013-03-20 | 中国科学院半导体研究所 | Electric tunable grating coupler |
| WO2014016343A2 (en) * | 2012-07-25 | 2014-01-30 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Method to optimize a light coupling waveguide |
| JP6281869B2 (en) * | 2014-02-27 | 2018-02-21 | 国立大学法人大阪大学 | Directional coupler and multiplexer / demultiplexer devices |
| CN104817054B (en) * | 2015-05-05 | 2016-08-17 | 广州大学 | Microspring formula cantilever beam carries soaking plate micro-heater and preparation technology thereof |
| CN106406074A (en) * | 2016-11-08 | 2017-02-15 | 中北大学 | Perpendicular coupling nanometer optical waveguide dual-optical-path chip atomic clock |
| CN107462950A (en) * | 2017-08-31 | 2017-12-12 | 武汉光迅科技股份有限公司 | A kind of wide temperature, low-power consumption array waveguide grating module and wavelength control method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100392476C (en) * | 2002-06-28 | 2008-06-04 | 日本电气株式会社 | Thermophotometric phase shifter and method for fabricating the same |
| CN105759350A (en) * | 2015-07-03 | 2016-07-13 | 苏州峰通光电有限公司 | Organic-inorganic hybrid integrated thermo-optical modulation type grating and preparation method thereof |
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Effective date of registration: 20230918 Address after: Room 102, No. 6 Jihuo Road, Huangpu District, Guangzhou City, Guangdong Province, 510700 Patentee after: Guangzhou Niobao Optoelectronics Co.,Ltd. Address before: 510275 No. 135 West Xingang Road, Guangzhou, Guangdong, Haizhuqu District Patentee before: SUN YAT-SEN University |