CN109031534A - A kind of thermal tuning grating coupler - Google Patents
A kind of thermal tuning grating coupler Download PDFInfo
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- CN109031534A CN109031534A CN201810991059.XA CN201810991059A CN109031534A CN 109031534 A CN109031534 A CN 109031534A CN 201810991059 A CN201810991059 A CN 201810991059A CN 109031534 A CN109031534 A CN 109031534A
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- grating
- grating coupler
- thermal tuning
- heating platform
- oxide layer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/34—Optical coupling means utilising prism or grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
Abstract
The present invention relates to a kind of thermal tuning grating couplers, including silicon substrate, setting buried oxide layer on a silicon substrate, the light engraving erosion silicon heating platform being arranged in buried oxide layer, the grating with oblique incidence being arranged on light engraving erosion silicon heating platform, and the micro-heater for being heated to light engraving erosion silicon heating platform, grating with oblique incidence being arranged in buried oxide layer.Scheme provided by the invention has abandoned traditional mode that micro-heater is prepared on heat insulator, the biggish heating efficiency for improving grating coupler, and then improves the coupling bandwidth of grating coupler.Since silicon materials have the biggish coefficient of heat conduction, slot is thermally isolated immediately below photo-coupler, heat can effectively be avoided to scatter and disappear by substrate, so that the great energy consumption for reducing grating coupler is improved the efficiency of thermal tuning.
Description
Technical field
The present invention relates to Si-based optoelectronics fields, more particularly, to a kind of thermal tuning grating coupler.
Background technique
Grating coupler is as a kind of input/output (input/output) optical device, for optical waveguide to optical fiber surface
Coupling, and the coupling of interlayer optical waveguide and optical waveguide on the same chip or between two different chips.Grating coupling
Highdensity interconnection may be implemented in clutch, from the two-dimentional input and output of silicon chip surface, the operation of multi-wavelength and in wafer
The functions such as wafer sort and vanning are carried out before cutting.Its preparation can be completely compatible with CMOS technology, can be extensive highly dense
Spend mass production.
In in the past few decades, a variety of modes for improving grating coupler coupling efficiency are had studied, such as be prepared into
Shallow etched diffraction grating prepares one layer of metallic reflector in grating bottom, and covers one layer of polysilicon covering on grating top.But
The farther away region of distance center wavelength, since mode mismatch coupling efficiency can decline very much.It is multiple in wide spectrum, wavelength-division to limit them
With (WDM), the application of C-band and L-band.
Summary of the invention
The present invention is to solve mode existing for the farther away region of grating coupler distance center wavelength that the prior art provides
The technological deficiency of mismatch coupling efficiency decline, provides a kind of thermal tuning grating coupler.
To realize the above goal of the invention, the technical solution adopted is that:
A kind of thermal tuning grating coupler, including silicon substrate, setting buried oxide layer on a silicon substrate, be arranged in it is shallow in buried oxide layer
Etching silicon heating platform, the grating with oblique incidence being arranged on light engraving erosion silicon heating platform, and the use being arranged in buried oxide layer
In the micro-heater heated to light engraving erosion silicon heating platform, grating with oblique incidence.
According to the coupled wave theory of grating coupler, the central wavelength of grating coupler is related with its effective refractive index, and silicon
Material has biggish thermo-optical coeffecient, thus can lose silicon heating platform, micro-heater by light engraving and be applied directly to heat
The mode of grating coupler changes the refractive index of grating coupler, and then changes the central wavelength of grating coupler.Of the invention
Scheme has abandoned traditional mode that micro-heater is prepared on heat insulator, the biggish heating for improving grating coupler
Efficiency, and then grating coupler is improved in the coupling bandwidth in the farther away region of distance center wavelength.
Preferably, on the top surface of the buried oxide layer, on the top surface of the light engraving erosion silicon heating platform, top surface of grating with oblique incidence
On be equipped with a layer insulating, micro-heater is arranged on the insulating layer.The present invention uses the growth on silicon materials one layer very thin
Heating method provides heat on insulating layer with higher heat-conductivity, greatly improves the thermal efficiency.
Preferably, the insulating layer is alumina insulating layer.
Preferably, it is emptied in the middle part of the silicon substrate；Several deep etching slots are provided in the buried oxide layer, for silicon
It is emptied in the middle part of substrate.
Further, four of light engraving erosion silicon heating platform position in buried oxide layer are arranged in several described deep etching slots
Week.
Since silicon materials have the biggish coefficient of heat conduction, is emptied immediately below grating coupler and slot is thermally isolated, it can be with
Heat is effectively avoided to scatter and disappear by silicon substrate, so that the great energy consumption for reducing grating coupler is improved the effect of thermal tuning
Rate.
Preferably, the quantity of the deep etching slot is 6, and 6 deep etching slots are successively set around light engraving erosion silicon heating platform
It sets；It is provided with cantilever support beam between the adjacent deep etching slot of any two, for losing silicon heating platform, oblique incidence to light engraving
Grating is supported.
Preferably, the grating with oblique incidence is connected with ridge waveguide, and the ridge waveguide is connected with slab waveguide.
Compared with prior art, the beneficial effects of the present invention are:
Scheme provided by the invention has abandoned traditional mode that micro-heater is prepared on heat insulator, biggish to improve
The heating efficiency of grating coupler, and then improve the coupling bandwidth of grating coupler.Since silicon materials have biggish heat transfer
Slot is thermally isolated in coefficient immediately below photo-coupler, can effectively avoid heat from scattering and disappearing by substrate, thus by greatly subtracting
The energy consumption of small grating coupler improves the efficiency of thermal tuning.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram of thermal tuning grating coupler.
Fig. 2 is the top view of thermal tuning grating coupler.
Fig. 3 is the sectional view of the A-A ' of Fig. 1.
Specific embodiment
The attached figures are only used for illustrative purposes and cannot be understood as limitating the patent；
Below in conjunction with drawings and examples, the present invention is further elaborated.
Embodiment 1
As shown in Figure 1, 2, 3, a kind of thermal tuning grating coupler, including silicon substrate 1, the buried oxide layer being arranged on silicon substrate 12,
The light engraving erosion silicon heating platform 6 being arranged in buried oxide layer 2, the grating with oblique incidence 9 being arranged on light engraving erosion silicon heating platform 6,
And the micro-heater for being heated to light engraving erosion silicon heating platform 6, grating with oblique incidence 9 in buried oxide layer 2 is set
10,11；The grating with oblique incidence 9 is connected with ridge waveguide 7, and the ridge waveguide 7 is connected with slab waveguide 8.
According to the coupled wave theory of grating coupler, the central wavelength of grating coupler is related with its effective refractive index, and silicon
Material has biggish thermo-optical coeffecient, thus it is direct by heat to lose silicon heating platform 6, micro-heater 10,11 by light engraving
The mode for being applied to grating coupler changes the refractive index of grating coupler, and then changes the central wavelength of grating coupler.This
The scheme of embodiment has abandoned traditional mode that micro-heater 10,11 is prepared on heat insulator, biggish to improve light
The heating efficiency of grid coupler, and then grating coupler is improved in the coupling bandwidth in the farther away region of distance center wavelength.
Embodiment 2
The present embodiment on the basis of embodiment 1, on the top surface of the buried oxide layer 2, light engraving erosion silicon heating platform 6 top surface
A layer insulating 3 is equipped on upper, grating with oblique incidence 9 top surface, the setting of micro-heater 10,11 is on the insulating layer 3.This
Embodiment uses heating method on the insulating layer 3 with higher heat-conductivity for grow on silicon materials one layer very thin to provide heat,
Greatly improve the thermal efficiency.
More specifically, insulating layer 3 is alumina insulating layer.
Embodiment 3
The present embodiment empties the middle part of silicon substrate 1 on the basis of embodiment 1 or embodiment 2；It is arranged in the buried oxide layer 2
There are several deep etching slots 4, is emptied for the middle part to silicon substrate 1.Wherein, the quantity of deep etching slot 4 is 6,6 depths
Etching groove 4 is successively arranged around light engraving erosion silicon heating platform 6；Cantilever branch is provided between the adjacent deep etching slot 4 of any two
Beam 5 is supportted, for being supported to light engraving erosion silicon heating platform 6, grating with oblique incidence 9.
Since silicon materials have the biggish coefficient of heat conduction, is emptied immediately below grating coupler and slot is thermally isolated, it can be with
Heat is effectively avoided to scatter and disappear by silicon substrate 1, so that the great energy consumption for reducing grating coupler is improved the effect of thermal tuning
Rate.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (8)
1. a kind of thermal tuning grating coupler, it is characterised in that: including silicon substrate, setting buried oxide layer on a silicon substrate, setting
The grating with oblique incidence that light engraving in buried oxide layer loses silicon heating platform, is arranged on light engraving erosion silicon heating platform, and setting
The micro-heater for being heated to light engraving erosion silicon heating platform, grating with oblique incidence in buried oxide layer.
2. thermal tuning grating coupler according to claim 1, it is characterised in that: on the top surface of the buried oxide layer, light engraving
It loses on the top surface of silicon heating platform, be equipped with a layer insulating on the top surface of grating with oblique incidence, micro-heater setting is being insulated
On layer.
3. thermal tuning grating coupler according to claim 2, it is characterised in that: the insulating layer is alumina insulation
Layer.
4. described in any item thermal tuning grating couplers according to claim 1 ~ 3, it is characterised in that: the middle part of the silicon substrate
It empties；Several deep etching slots are provided in the buried oxide layer, for emptying in the middle part of silicon substrate.
5. thermal tuning grating coupler according to claim 4, it is characterised in that: several deep etching slots setting exists
The surrounding of light engraving erosion silicon heating platform position in buried oxide layer.
6. thermal tuning grating coupler according to claim 5, it is characterised in that: the quantity of the deep etching slot is 6,
6 deep etching slots are successively around light engraving erosion silicon heating platform setting；Cantilever is provided between the adjacent deep etching slot of any two
Supporting beam, for being supported to light engraving erosion silicon heating platform, grating with oblique incidence.
7. thermal tuning grating coupler according to claim 5, it is characterised in that: the grating with oblique incidence is connected with ridge
Waveguide, the ridge waveguide are connected with slab waveguide.
8. thermal tuning grating coupler according to claim 5, it is characterised in that: between the ridge waveguide and slab waveguide
Connection pass through taper structural transition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810991059.XA CN109031534B (en) | 2018-08-28 | 2018-08-28 | Thermal tuning grating coupler |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810991059.XA CN109031534B (en) | 2018-08-28 | 2018-08-28 | Thermal tuning grating coupler |
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| CN109031534A true CN109031534A (en) | 2018-12-18 |
| CN109031534B CN109031534B (en) | 2020-08-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113917604A (en) * | 2020-07-07 | 2022-01-11 | 格芯(美国)集成电路科技有限公司 | Tunable grating coupler containing material with variable refractive index |
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| CN1424602A (en) * | 2003-01-10 | 2003-06-18 | 中国科学院上海光学精密机械研究所 | Adjustable optical fibre polarizer and production thereof |
| US7133582B1 (en) * | 2003-12-04 | 2006-11-07 | Behzad Moslehi | Fiber-optic filter with tunable grating |
| US20080080804A1 (en) * | 2006-09-29 | 2008-04-03 | Electronics And Telecommunications Research Institute | Tunable waveguide bragg grating device |
| CN102565955B (en) * | 2012-01-16 | 2013-03-20 | 中国科学院半导体研究所 | Electric tunable grating coupler |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113917604A (en) * | 2020-07-07 | 2022-01-11 | 格芯(美国)集成电路科技有限公司 | Tunable grating coupler containing material with variable refractive index |
| CN113917604B (en) * | 2020-07-07 | 2023-12-19 | 格芯(美国)集成电路科技有限公司 | Tunable grating coupler containing material with variable refractive index |
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| CN109031534B (en) | 2020-08-11 |
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Effective date of registration: 20230918 Address after: Room 102, No. 6 Jihuo Road, Huangpu District, Guangzhou City, Guangdong Province, 510700 Patentee after: Guangzhou Niobao Optoelectronics Co.,Ltd. Address before: 510275 No. 135 West Xingang Road, Guangzhou, Guangdong, Haizhuqu District Patentee before: SUN YAT-SEN University |
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