CN115219056A - Quick-response and high-temperature-resistant film type temperature sensor and preparation method thereof - Google Patents
Quick-response and high-temperature-resistant film type temperature sensor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 230000004044 response Effects 0.000 title claims abstract description 25
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 127
- 238000000034 method Methods 0.000 claims abstract description 72
- 239000010410 layer Substances 0.000 claims abstract description 61
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 48
- 238000000137 annealing Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000011241 protective layer Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims description 94
- 239000010409 thin film Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 11
- 239000013077 target material Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052786 argon Inorganic materials 0.000 claims description 6
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- 239000011651 chromium Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000005553 drilling Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims description 6
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 15
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- 238000012360 testing method Methods 0.000 description 3
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012271 agricultural production Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
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- 239000002131 composite material Substances 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- -1 lanthanum aluminate Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
The invention relates to the technical field of temperature sensors, and discloses a fast-response and high-temperature-resistant film type temperature sensor and a preparation method thereof, wherein the fast-response and high-temperature-resistant film type temperature sensor comprises an insulating substrate and a platinum film resistor temperature sensor with a buffer layer, the insulating substrate is a quartz substrate, the buffer layer and the platinum film resistor temperature sensor with a high-temperature-resistant protective layer are deposited on the insulating substrate, the buffer layer, the high-temperature-resistant protective layer and the platinum film resistor temperature sensor are distributed in an S shape, and the fast-response and high-temperature-resistant film type temperature sensor is prepared by a fast annealing process different from the traditional annealing process. The fast-response and high-temperature-resistant film type temperature sensor adopts a magnetron sputtering process, the thickness of the film is in a nanometer scale, the heat capacity is small, the metal adhesion is strong, the integral resistance of the device is low, and the response time is fast.
Description
Technical Field
The invention relates to the technical field of temperature sensors, in particular to a fast-response and high-temperature-resistant film type temperature sensor and a preparation method thereof.
Background
The temperature sensor is mainly used for measuring temperature and has important application in the fields of industrial monitoring, agricultural production, scientific research and the like. As technology develops, more and more sensors are used for transient measurement, and the requirements on the size of the sensors are gradually increased. In recent years, the development of application technology and assembly technology of the platinum film thermal resistance temperature sensor is gradually mature. For example, in the process control, the safety and the reliability of the system work can be ensured by detecting the temperature in time. In the use of the new energy automobile, the platinum film temperature sensor can monitor the temperature of the energy battery of the automobile and the temperature of the new energy battery to prevent the device from being damaged due to overheating.
However, most of the platinum film resistance sensors used in China are foreign products imported and sold by dealers, and such technologies and products are monopolized by foreign manufacturers, and on the other hand, most of the existing platinum film resistance sensors have various defects, for example, in the Chinese patent 201880030405.6, a sensor for measuring gas parameters is disclosed, and the sensor structure is S-shaped, but the adopted materials have weak high temperature resistance. In addition, chinese patent 201610913940.9 discloses an antioxidant composite protective layer for a high-temperature thin film sensor and a preparation method thereof, wherein a long-time annealing mode is adopted, defects are generated on the surface of a thin film, so that the performance of the device is affected, and in view of the important role of platinum thin film thermal resistance in the civil field and the military field, the technical lag in this aspect of China is changed, and the method has a far-reaching strategic target.
The Temperature Coefficient of Resistance (TCR) is one of the key indexes for representing the performance of the platinum thin film thermal resistor, and the TCR value of most of the platinum thin film thermal resistors reported in China is still lower than 3.0 multiplied by 10 at room temperature -3 /. Degree.C.. In order to improve the temperature coefficient of resistance of the Pt thin film temperature sensor, one method is by high temperature annealing for a long time. It is found that the sensitivity of the device is reduced and the linearity is deteriorated due to the fact that the high temperature annealing for a long time reduces the defects of the thin film, but the buffer layer in the platinum resistance temperature sensor diffuses to the surface under the high temperature state for a long time, so that impurities on the surface of the thin film are increased. Therefore, at present, the TCR is improved by long-time high-temperature annealing at home, the performance is not obviously improved, the traditional buffer layer Ti is selected for relatively few researches on the buffer layer, and the selection is single, so that devices prepared at home mostly do not reach the international standard, the process time is too long, and the temperature rise and drop time is in hours. Another method is to select an insulating substrate with low thermal conductivity and high temperature resistance to prepare Pt, so that the TCR can be improved to a certain extent. Although the first method can improve the TCR to a certain extent, the annealing process is long, the temperature rise and reduction process is up to one day, the damage to the device is large, and the TCR of the prepared device is more than or equal to 3.0 multiplied by 10 -3 /. Degree.C.. The oxide single crystal substrate (e.g., alumina substrate, lanthanum aluminate substrate, etc.) used in the second method can effectively improve TCR, but the process cost is high, and the cost required for experimental design is excessive. The preparation processes of the two methods are relatively complex and the preparation cost is high, and a novel preparation process needs to be explored to improve the performance of the temperature sensor.
Disclosure of Invention
The invention aims to provide a fast-response and high-temperature-resistant film type temperature sensor and a preparation method thereof, and aims to solve the problems of low sensitivity and weak high-temperature resistance of the conventional platinum film resistance sensor.
In order to achieve the above object, the basic scheme of the invention is as follows: the utility model provides a quick response and high temperature resistant film type temperature sensor, includes the insulating substrate, and the deposit has the platinum film resistance temperature sensor who has the buffer layer and have high temperature resistant protective layer on the insulating substrate, and buffer layer and the platinum film resistance temperature sensor who has high temperature resistant protective layer are S-shaped and distribute.
The principle and the beneficial effects of the invention are as follows: the adoption is the insulating substrate, and do not have buffer layer or the heat-conducting glue of low coefficient of thermal conductivity between substrate and the film to showing and reducing hot border resistance, then can realizing the measurement of higher temperature, platinum film resistor temperature sensor is owing to have the buffer layer simultaneously, and the whole thickness of buffer layer is 1 ~ 15nm, and the buffer layer can play the effect of strengthening substrate and platinum film resistor connectivity, can also play the effect of solving the stress mismatch problem that platinum and the different leads to of buffer layer coefficient of thermal expansion simultaneously.
Furthermore, the high temperature resistant protective layer is made of silicon nitride or aluminum nitride material, and the thickness of the high temperature resistant protective layer is 100-300 nm.
Further, the platinum film resistor temperature sensor is patterned by using a mask.
Has the advantages that: compared with the traditional photoetching process for patterning, the mask plate technology can ensure that the patterns are complete and clear, so that the pattern damage caused by the photoetching process can be avoided, and the performance of the device is optimal.
Further, the buffer layer is made of heat conducting metal tantalum or chromium metal.
Has the advantages that: the diffusion of the buffer layer has a negative effect on the platinum resistance layer, but the buffer layer is researched singly in China, and two metals which are high temperature resistant and have thermal expansion coefficients suitable for the platinum resistance and the substrate are selected by the buffer layer, so that the buffer layer of the buffer layer selects a tantalum or chromium metal single layer or alloy layer as a preferred material, selects metal tantalum or chromium metal to prepare a single layer film or two metals to prepare a multilayer film or alloy film, the electrical property and the adhesive force of tantalum or chromium are obviously superior to those of the traditional titanium buffer layer, and the diffusion of the buffer layer at high temperature can be reduced to a certain extent by selecting the two materials.
Further, the thickness of the platinum film is 80 to 200nm.
Further, the buffer layer has a thickness of 1 to 15nm.
Further, the preparation method of the fast-response and high-temperature-resistant film type temperature sensor comprises the following preparation steps,
step one, adopting the existing process to respectively clean the insulating substrate by absolute ethyl alcohol, ultrapure water, acetone and absolute ethyl alcohol,
step two, sputtering a high-quality S-shaped buffer layer metal film on the insulating substrate by using a mask by adopting a magnetron sputtering process, or preparing a temperature sensor buffer layer by adopting a thermal evaporation process,
under the condition of keeping the vacuum state unchanged, continuously growing the platinum film resistor temperature sensor on the basis of the buffer film material, wherein the thickness of the platinum film resistor temperature sensor is between 80 and 200nm, and the preparation conditions are as follows: preparing by adopting a magnetron sputtering method; the power of magnetron sputtering is 30-60W, the sputtering target material is a high-purity platinum target, the sputtering pressure is 0.2-0.5 Pa, the argon flow is 40-100 sccm,
step four, under the condition of keeping the vacuum state unchanged, continuously growing a high-temperature resistant protective layer film based on the thermal resistance film, wherein the thickness of the high-temperature resistant protective layer film is between 100 and 300nm,
taking the prepared temperature sensor out of the magnetron sputtering equipment for rapid annealing, wherein the temperature reaches a preset high-temperature state within a few seconds, and the diffusion and oxidation of the buffer layer film are avoided, and the annealing method comprises the following steps: carrying out rapid heating, wherein the annealing heating speed is 60-100 ℃/s, and the heating time is 5-10 s; the annealing temperature is 500-900 ℃, and the temperature is kept for 1-10 min at the annealing temperature; cooling to room temperature of 25 ℃ at a cooling speed of 10 ℃/min,
and step six, carrying out laser drilling treatment on the annealed temperature sensor to carry out lead wire.
Has the advantages that: the magnetron sputtering process is adopted, the thickness of the film is in a nanometer scale, the heat capacity is small, the metal adhesion is strong, the integral resistance of the device is low, the response time is fast, meanwhile, the rapid annealing process is adopted, the process time is greatly shortened, the preparation of the device can be completed in a short time, the performance improvement range is larger compared with the existing invention, and the existing film type temperature sensor on the market at present utilizes the existing annealing process, so that the effect of the annealing process in the application is difficult to obtain. The fourth step adopts a magnetron sputtering process to prepare the high-temperature resistant protective layer, and the preparation conditions are as follows: and under the condition of keeping the vacuum state unchanged, continuously growing a high-temperature-resistant protective layer film based on the thermal resistance film, wherein the thickness of the high-temperature-resistant protective layer film is between 100 and 300nm. The platinum film temperature sensor added with the high-temperature resistant protective layer can ensure that the temperature sensor can normally work under the high-temperature condition of 900 ℃ for a long time, and is different from most protective layer materials in the market, and the selected aluminum nitride or silicon nitride material has higher heat transfer capacity compared with the traditional material.
Further, a magnetron sputtering process is adopted to sputter a high-quality S-shaped buffer layer metal film on the insulating substrate by using a mask, and the preparation conditions are as follows: preparing by adopting a magnetron sputtering method; the S-shaped patterned mask is fixed on the surface of an insulating substrate for magnetron sputtering with the power of 30-80W, the sputtering target material is a high-purity metal target material of tantalum or chromium, each metal target material is at an interval of 90 degrees, the sputtering pressure is 0.2-0.5 Pa, the argon flow is 40-100 sccm, and different target materials can be sputtered simultaneously or sequentially.
Has the advantages that: the TCR coefficient of the platinum film temperature sensor treated by the rapid annealing process is larger and reaches the international standard (3.0 multiplied by 10) -3 /° c), high sensitivity, the thickness difference of the whole surface of the thin film device is controlled within 300nm, the smooth surface of the device ensures that the interference of the temperature environment is very small, thereby providing possibility for accurately measuring the temperature, the rapid annealing process greatly simplifies the process flow, is convenient for large-scale batch production, and compared with the prior invention, the performance improvement range is larger, the existing thin film type temperature sensor in the market utilizes the existing annealing process, the effect of the annealing process in the application is difficult to obtain, meanwhile, the rapid annealing process can solve the defects caused by long-time high-temperature treatment, andthe high temperature state can be achieved in a short time, the heat preservation time is short, the TCR coefficient of the finished device is obviously improved and is more than 3.2 multiplied by 10 -3 and/deg.C, exceeds the TCR coefficient of most film temperature sensors in China.
Further, the sixth step is to perform lead wire on the prepared film type temperature sensor, and the preparation conditions are as follows: and after the platinum film temperature sensor is plated, carrying out lead wire treatment, wherein the lead wire material can be a silver wire or a platinum wire, and the lead wire with the diameter of 0.1-0.3 mm is adopted.
Has the advantages that: the laser drilling connection lead has good connection effect with the platinum film temperature sensor, has strong heat resistance, is convenient to be connected with the platinum film temperature sensor, and is wound on the platinum film temperature sensor by adopting the compression joint of the lead with the diameter of 0.1-0.3 mm. Different from the existing method that silver paste is utilized to bond the lead, the method provided by the invention presses the lead material on the aluminum film temperature sensor through a laser drilling technology, so that the failure of the silver paste under a high-temperature condition is avoided, and the normal operation of the device can be ensured even under the high temperature condition.
Drawings
Fig. 1 is a side view and a partially enlarged view of a fast-response and high-temperature-resistant thin-film type temperature sensor according to an embodiment of the present invention.
Fig. 2 is a diagram illustrating five resistance temperature test results of the fast-response and high-temperature-resistant thin-film temperature sensor according to the embodiment of the present invention.
Detailed Description
The following is further detailed by way of specific embodiments:
reference numerals in the drawings of the specification include: insulating base 1, buffer layer 2, platinum film resistance temperature sensor 3.
The embodiment is basically as shown in the attached figures 1 and 2:
a fast response and high temperature resistant film type temperature sensor comprises an insulating substrate 1, wherein the insulating substrate 1 is a quartz substrate and is about 20-150 nm thick, a platinum film resistor temperature sensor 3 with a buffer layer 2 is deposited on the insulating substrate 1, the buffer layer 2 is 1-15 nm thick, a platinum film resistor temperature sensor 3 is arranged on the buffer layer 2, the platinum film resistor temperature sensor 3 is made of platinum with good stability at high temperature, the platinum film thickness of the platinum film resistor temperature sensor 3 is 80-200 nm, and the buffer layer 2 and the platinum film resistor temperature sensor 3 are distributed in an S shape.
The specific implementation process is as follows: the utility model provides an insulating substrate 1, and do not have buffer layer 2 or the heat-conducting glue of low coefficient of thermal conductivity between base and the film, thereby show and reduce hot border resistance, then can realize the measurement of higher temperature, platinum film resistor temperature sensor 3 is owing to have buffer layer 2 simultaneously, the whole thickness of buffer layer 2 is 1 ~ 15nm, buffer layer 2 can play the effect of strengthening base and platinum film resistor connectivity, can also play the effect of the stress mismatch problem that the difference of solving platinum and buffer layer 2 coefficient of thermal expansion leads to simultaneously, and relative ratio carries out the patterning in traditional lithography process, adopt the mask plate technique can make the pattern complete clear, thus can avoid the pattern that lithography process brought impaired messenger's device performance to reach the optimum.
In this embodiment, the buffer layer 2 is made of a heat conductive metal, tantalum or chromium, which has good stability at high temperatures.
In the embodiment, the diffusion of the buffer layer 2 has a negative effect on the platinum resistor layer, but the buffer layer 2 is researched singly in China, and two metals which are high temperature resistant and have thermal expansion coefficients suitable for the platinum resistor and the substrate are selected, so that the buffer layer 2 of the invention selects a tantalum or chromium metal single layer or alloy layer as a preferred material, selects metal tantalum or chromium metal to prepare a single layer film or two metals to prepare a multilayer film or alloy film, the electrical property and the adhesive force of tantalum or chromium are obviously superior to those of the traditional titanium buffer layer 2, and the two materials can reduce the diffusion of the buffer layer 2 at high temperature to a certain extent.
In the present embodiment, a method for manufacturing a fast-response and high-temperature-resistant thin-film type temperature sensor includes the steps of,
step one, adopting the existing technology to respectively clean the insulating substrate by absolute ethyl alcohol, ultrapure water, acetone and absolute ethyl alcohol,
secondly, sputtering a high-quality S-shaped buffer layer metal film on the insulating substrate by using a mask by adopting a magnetron sputtering process, wherein the preparation conditions are as follows: preparing by adopting a magnetron sputtering method; the S-shaped patterned mask is fixed on the surface of an insulating substrate for magnetron sputtering with the power of 30-80W, the sputtering target materials are high-purity metal target materials of tantalum and chromium, each metal target material is at an interval of 90 degrees, the sputtering pressure is 0.2-0.5 Pa, the argon flow is 40-100 sccm, different target materials can be sputtered simultaneously or sequentially,
and step three, under the condition of keeping the vacuum state unchanged, continuously growing the platinum film resistor temperature sensor on the basis of the buffer film material, wherein the thickness of the platinum film resistor temperature sensor is between 80 and 200nm, and the preparation conditions are as follows: preparing by adopting a magnetron sputtering method; the power of magnetron sputtering is 30-60W, the sputtering target material is a high-purity platinum target, the sputtering pressure is 0.2-0.5 Pa, the argon flow is 40-100 sccm,
step four, under the condition of keeping the vacuum state unchanged, continuously growing a high-temperature resistant protective layer film based on the thermal resistance film, wherein the thickness of the high-temperature resistant protective layer film is between 100 and 300nm,
step five, taking out the prepared temperature sensor from the magnetron sputtering equipment for rapid annealing, wherein the temperature reaches a preset high-temperature state within a few seconds, and the diffusion and oxidation of the buffer layer film are avoided, and the annealing conditions of the experiment are as follows: adopting a rapid annealing process, firstly, rapidly heating up, wherein the annealing heating up speed is 60-100 ℃/s, and the heating up time is 5-10 s; the annealing temperature is 500-900 ℃, and the temperature is kept for 1-10 min at the annealing temperature; cooling to room temperature 25 deg.C (cooling rate 10 deg.C/min),
and step six, carrying out laser drilling treatment on the annealed temperature sensor to carry out lead wire.
In the embodiment, a magnetron sputtering process is adopted, the thickness of the film is in a nanometer scale, the heat capacity is small, the metal adhesion is strong, the overall resistance of the device is low, the response time is short, meanwhile, the rapid annealing process is adopted, the process time is greatly shortened, the preparation of the device can be completed in a short time, the performance improvement range is larger compared with the existing invention, and the effect of the annealing process in the application is difficult to obtain by utilizing the existing annealing process for the existing film type temperature sensor in the market at present.
In the present embodiment, the platinum film resistance temperature sensor 3 employs a rapid annealing process.
In this embodiment, the TCR coefficient of the platinum film temperature sensor processed by the rapid annealing process is relatively large and reaches the international standard (3.0 × 10) -3 /deg.c), high sensitivity, the thickness difference of the whole surface of the thin film device is controlled within 300nm, the smooth surface of the device ensures that the interference of the temperature environment is very small, thereby providing possibility for accurately measuring the temperature, the rapid annealing process greatly simplifies the process flow, is convenient for large-scale batch production, and compared with the prior invention, the performance promotion range is larger, the existing thin film type temperature sensor in the market utilizes the prior annealing process, the effect of the annealing process in the application is difficult to obtain, meanwhile, the rapid annealing process can solve the defects caused by long-time high-temperature treatment, and can reach a high-temperature state in a short time, the heat preservation time is shorter, the TCR coefficient of the finished product of the device is obviously improved, and is up to more than 3.2 multiplied by 10, and the temperature coefficient of the finished product is obviously improved -3 /° c, the TCR coefficient of most domestic membrane temperature sensors is exceeded.
The method for manufacturing the fast-response and high-temperature-resistant thin-film temperature sensor is different from the method for manufacturing the fast-response and high-temperature-resistant thin-film temperature sensor in that a thermal evaporation process is adopted to manufacture the temperature sensor buffer layer 2 in the second step, other steps are the same as the steps, lead processing is carried out after the platinum thin-film temperature sensor is plated, a lead material can be a silver wire or a platinum wire, a lead with the diameter of 0.1-0.3 mm is adopted for leading, and the method is different from the method for bonding the lead by utilizing silver paste in the prior art.
In the embodiment, the high-temperature-resistant protective layer for preparing the temperature sensor by adopting the magnetron sputtering process has a good heat transfer effect, and can ensure that the temperature sensor works at a high temperature for a long time.
In the embodiment, the temperature sensor buffer layer prepared by the thermal evaporation process has good heat conduction effect and strong heat resistance, and is convenient to combine with the platinum film temperature sensor 3.
And (3) testing experimental results:
1. the obtained platinum film temperature sensor is subjected to resistance tests at different temperatures, the heating rate is 1 ℃/s, and resistance temperature curves between 25 ℃ and 500 ℃ are tested, as shown in figure 2, and the linearity and the resistance temperature coefficient are respectively 0.998 and 3.2 multiplied by 10 after fitting -3 The temperature range is-200 ℃ to 800 ℃.
2. And verifying the influence of different annealing temperatures and annealing times on the performance improvement of the film temperature sensor. The result proves that in a certain range, the longer the annealing temperature rise and decrease treatment time is, the higher the film falling degree is, the worse the surface quality is, and the negative effect is exerted on the performance of the film temperature sensor. The invention greatly improves the comprehensive performance of the film temperature sensor and shortens the process flow.
3. The surface elements of the temperature sensing device prepared by using the conditions of the invention through EDS scanning comparison have the advantages that the percentage of the buffer layer 2 is obviously higher than that of the rapid annealing after one hour of annealing, and compared with the device with the conventional buffer layer 2 on the market, the diffusion of the material adopted in the invention is obviously lower than that of the conventional buffer layer.
The foregoing is merely an example of the present invention and common general knowledge in the art of specific structures and/or features of the invention has not been set forth herein in any way. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several variations and modifications can be made, which should also be considered as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the utility of the patent. The scope of the claims of the present application shall be defined by the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.
Claims (9)
1. A fast response and high temperature resistant film type temperature sensor is characterized in that: the high-temperature-resistant platinum film resistor temperature sensor comprises an insulating substrate, wherein a platinum film resistor temperature sensor with a buffer layer and a high-temperature-resistant protective layer is deposited on the insulating substrate, and the buffer layer and the platinum film resistor temperature sensor with the high-temperature-resistant protective layer are distributed in an S shape.
2. The fast-response, high-temperature-resistant thin-film temperature sensor of claim 1, wherein: the high temperature resistant protective layer is made of silicon nitride or aluminum nitride material, and the thickness of the high temperature resistant protective layer is 100-300 nm.
3. The fast-response, high-temperature-resistant thin-film temperature sensor of claim 2, wherein: the platinum film resistor temperature sensor is patterned by adopting a mask.
4. The fast responding and high temperature resistant thin film temperature sensor according to claim 3, wherein: the buffer layer is made of heat-conducting metal tantalum or chromium metal.
5. The fast responding and high temperature resistant thin film temperature sensor according to claim 4, wherein: the thickness of the platinum film is 80-200 nm.
6. The fast responding and high temperature resistant thin film temperature sensor according to claim 5, wherein: the thickness of the buffer layer is 1-15 nm.
7. A preparation method of a fast-response and high-temperature-resistant film type temperature sensor is characterized by comprising the following steps: comprises the following preparation steps of the preparation method,
step one, adopting the existing technology to respectively clean the insulating substrate by absolute ethyl alcohol, ultrapure water, acetone and absolute ethyl alcohol,
step two, sputtering a high-quality S-shaped buffer layer metal film on the insulating substrate by using a mask by adopting a magnetron sputtering process, or preparing a temperature sensor buffer layer by adopting a thermal evaporation process,
and step three, under the condition of keeping the vacuum state unchanged, continuously growing the platinum film resistor temperature sensor on the basis of the buffer film material, wherein the thickness of the platinum film resistor temperature sensor is between 80 and 200nm, and the preparation conditions are as follows: preparing by adopting a magnetron sputtering method; the power of magnetron sputtering is 30-60W, the sputtering target material is a high-purity platinum target, the sputtering pressure is 0.2-0.5 Pa, the argon flow is 40-100 sccm,
under the condition of keeping the vacuum state unchanged, continuously growing a high-temperature-resistant protective layer film on the basis of the thermal resistance film, wherein the thickness of the high-temperature-resistant protective layer film is between 100 and 300 nm;
taking the prepared temperature sensor out of the magnetron sputtering equipment for rapid annealing, wherein the temperature reaches a preset high-temperature state within a few seconds, and the diffusion and oxidation of the buffer layer film are avoided, and the annealing method comprises the following steps: carrying out rapid heating, wherein the annealing heating speed is 60-100 ℃/s, and the heating time is 5-10 s; the annealing temperature is 500-900 ℃, and the temperature is kept for 1-10 min at the annealing temperature; cooling to room temperature of 25 ℃ at a cooling speed of 10 ℃/min,
and step six, carrying out laser drilling treatment on the annealed temperature sensor to carry out lead wire.
8. The method for manufacturing a fast-response and high-temperature-resistant thin-film type temperature sensor according to claim 7, wherein: a magnetron sputtering process is adopted to sputter a high-quality S-shaped buffer layer metal film on an insulating substrate by using a mask plate, and the preparation conditions are as follows: preparing by adopting a magnetron sputtering method; the S-shaped patterned mask is fixed on the surface of an insulating substrate for magnetron sputtering with the power of 30-80W, the sputtering target is a high-purity metal target of tantalum or chromium, each metal target is at an interval of 90 degrees, the sputtering pressure is 0.2-0.5 Pa, the argon flow is 40-100 sccm, and different targets can be sputtered simultaneously or sequentially.
9. The method for manufacturing a fast-response and high-temperature-resistant thin-film type temperature sensor according to claim 7, wherein: and sixthly, leading the prepared film type temperature sensor, wherein the preparation conditions are as follows: after the platinum film temperature sensor is plated, conducting lead wire treatment, wherein the lead wire material can be a silver wire or a platinum wire, the lead wire with the diameter of 0.1-0.3 mm is adopted, the diameter of a hole is 0.1-0.3 mm through laser drilling, and the lead wire material is wound on the platinum film temperature sensor in a compression joint mode.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4952904A (en) * | 1988-12-23 | 1990-08-28 | Honeywell Inc. | Adhesion layer for platinum based sensors |
| JPH05121205A (en) * | 1991-10-30 | 1993-05-18 | Aichi Tokei Denki Co Ltd | Platinum thin film resistance temperature sensor |
| JPH1056153A (en) * | 1996-08-08 | 1998-02-24 | New Japan Radio Co Ltd | Thin-film capacitor and manufacturing method |
| JP2004311624A (en) * | 2003-04-04 | 2004-11-04 | Tokuyama Corp | Laminate and its manufacturing method |
| DE102005051182A1 (en) * | 2005-10-24 | 2007-04-26 | Heraeus Sensor Technology Gmbh | Flow sensor unit cleaning method, involves arranging temperature measuring unit and heat unit on carrier unit, and heating temperature measuring unit with additional platinum thin-film resistor |
| CN101349669A (en) * | 2007-07-19 | 2009-01-21 | 张薰予 | Formaldehyde gas sensor |
| CN101614753A (en) * | 2008-06-26 | 2009-12-30 | 清华大学 | Flow field sensor and preparation method thereof |
| CN109115358A (en) * | 2018-09-27 | 2019-01-01 | 宁波中车时代传感技术有限公司 | A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof |
| CN112268632A (en) * | 2020-10-19 | 2021-01-26 | 中国电子科技集团公司第四十九研究所 | 1000 ℃ high-temperature-resistant metal film thermal resistor with adjustable temperature coefficient and preparation method thereof |
| CN113186528A (en) * | 2021-04-30 | 2021-07-30 | 上海铂源微电子有限公司 | Platinum film and preparation method and application thereof |
-
2022
- 2022-07-18 CN CN202210842917.0A patent/CN115219056B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4952904A (en) * | 1988-12-23 | 1990-08-28 | Honeywell Inc. | Adhesion layer for platinum based sensors |
| JPH05121205A (en) * | 1991-10-30 | 1993-05-18 | Aichi Tokei Denki Co Ltd | Platinum thin film resistance temperature sensor |
| JPH1056153A (en) * | 1996-08-08 | 1998-02-24 | New Japan Radio Co Ltd | Thin-film capacitor and manufacturing method |
| JP2004311624A (en) * | 2003-04-04 | 2004-11-04 | Tokuyama Corp | Laminate and its manufacturing method |
| DE102005051182A1 (en) * | 2005-10-24 | 2007-04-26 | Heraeus Sensor Technology Gmbh | Flow sensor unit cleaning method, involves arranging temperature measuring unit and heat unit on carrier unit, and heating temperature measuring unit with additional platinum thin-film resistor |
| CN101349669A (en) * | 2007-07-19 | 2009-01-21 | 张薰予 | Formaldehyde gas sensor |
| CN101614753A (en) * | 2008-06-26 | 2009-12-30 | 清华大学 | Flow field sensor and preparation method thereof |
| CN109115358A (en) * | 2018-09-27 | 2019-01-01 | 宁波中车时代传感技术有限公司 | A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof |
| CN112268632A (en) * | 2020-10-19 | 2021-01-26 | 中国电子科技集团公司第四十九研究所 | 1000 ℃ high-temperature-resistant metal film thermal resistor with adjustable temperature coefficient and preparation method thereof |
| CN113186528A (en) * | 2021-04-30 | 2021-07-30 | 上海铂源微电子有限公司 | Platinum film and preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 汪国军;白煜;胡少杰;张敏;王书蓓;万飞;: "退火工艺对磁控溅射生长的Pt薄膜微观结构及电性能的影响", 材料导报, no. 2, 25 November 2019 (2019-11-25) * |
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