CN104149416B - A kind of Metal Substrate high-temperature insulating layer and preparation method thereof - Google Patents
A kind of Metal Substrate high-temperature insulating layer and preparation method thereof Download PDFInfo
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- CN104149416B CN104149416B CN201410418821.7A CN201410418821A CN104149416B CN 104149416 B CN104149416 B CN 104149416B CN 201410418821 A CN201410418821 A CN 201410418821A CN 104149416 B CN104149416 B CN 104149416B
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Abstract
The invention discloses a kind of Metal Substrate high-temperature insulating layer and preparation method thereof, belong to thin-film material technical field.Comprising six Rotating fields, is alloy substrates 1, NiCrAlY alloy transition layer 2, α-Al from the bottom up successively
2o
3layer 3, crystalline state YSZ layer 4, amorphous state YSZ layer 5, Al
2o
3layer 6, wherein α-Al
2o
3layer adopts thermal oxidation method to obtain, and crystalline state YSZ layer and amorphous state YSZ layer all adopt sputtering method to obtain, Al
2o
3layer 6 adopts electron-beam vapor deposition method to prepare.Insulating barrier of the present invention can ensure at least at 800 DEG C, good electrical between thin film sensor functional layer and metallic substrates insulate, and after annealing under long-time hot environment, insulaion resistance can not reduce, and have the trend of increase, the normal work of thin film sensor under high temperature, the environment such as heavily stressed can be met.
Description
Technical field
The invention belongs to thin-film material technical field, particularly a kind of insulating barrier using turbine engine blade etc. as the thin film sensor of substrate and preparation method thereof, this insulating barrier can be widely used in the electric insulation between thin film sensor and metallic substrates, ensures thin film sensor normal work in high temperature environments.
Background technology
In modern aeroengine technology, turbo blade technology is one of wherein the most key technology.Engine turbine blade working, in the rugged environment such as high temperature, high heat flux, high vibration, air blast, easily makes turbo blade damage, causes whole engine to be scrapped.Therefore, develop high-temperature resistant membrane sensor and key technology is wherein become to state parameter measurements such as blade working temperature, blade stress strains.Blade of aviation engine is generally Metal Substrate high temperature alloy, and the normal work of thin film sensor and the necessary electric insulation guarantee sensor of metallic substrates, therefore develops the key link that reliable high-temperature insulating layer becomes development thin film sensor.
Thin film strain meter, film thermocouple etc. are mainly contained to the thin film sensor that blade state parameter is measured.Current thin film thermocouple mainly contains K type thermocouple, S type thermocouple, ITO/Pt thermocouple etc.The principle of thermocouple temperature measurement is based on pyroelectric effect, and the converting heat that the external world absorbs by thermocouple is thermoelectrical potential, i.e. Seebeck electromotive force.Thin film strain meter at present more adopts electric resistance wire strain gauge, and the principle of its monitor strain is that device resistance produces change along with surveyed stresses of parts change.Therefore, the thin film sensors such as film thermocouple, thin film strain meter must have good electric isolution with metallic substrates, must prepare insulating barrier between thin film sensor and substrate.Between thin film sensor and substrate, the too low meeting of the insulaion resistance of insulating barrier directly affects the test accuracy of device, and particularly in the case of a high temperature, insulaion resistance generally can raise with temperature and exponentially decline, and causes whole component failure.
At present, can be used as high-temperature insulating layer and the material of filming comprises Al
2o
3, SiO
2, Cr
3c
2, YSZ (Y
2o
3stabilizedZrO
2, the zirconia that yttrium is stable) etc.The preparation method of thin dielectric film mainly contains: electron beam evaporation, rf magnetron sputtering, d.c. sputtering, thermal oxide growth etc.Insulating barrier can be divided into monolayer insulating layer and plural layers insulating barrier, and wherein, monolayer insulating layer, as electron beam evaporation Al
2o
3, sputtering SiO
2, after thin film deposition may just there is hole and crack in itself, and in the adverse circumstances of turbo blade work, hole and crack expand further, causes functional layer and substrate conducting; And the insulating barrier of multi-layer film structure is the high-temperature insulating layer generally applied now, but multi-layer film structure insulating barrier can cause cracking due to thermal coefficient of expansion difference between different thin layer, or insulating barrier is different from the thermal coefficient of expansion of metallic substrates causes film peeling and come off.
The insulaion resistance minimum of a value meeting electric insulation between thin film sensor functional layer and metallic substrates is 100K Ω.According to this standard, document (JohnD.Wrbanek, AMultilayeredThinFilmInsulatorforHarshEnvironments, NASA/TM-2002-211873AIAA – 2002 – 3731) is had to report: sputtering SiO
2(1 μm)-sputtering Al
2o
3the insulating barrier of (4 μm) structure is at Al
2o
3the effective serviceability temperature of insulation on ceramic substrate reaches 1142 DEG C, but serviceability temperature is only 260 DEG C on the metallic substrate; Sputtering Al
2o
3(2 μm)-sputtering SiO
2(1 μm)-sputtering Al
2o
3the insulating barrier of (2 μm) structure on the metallic substrate serviceability temperature is only 250 DEG C; Electron beam evaporation SiO
2-electron beam evaporation Al
2o
3directly conducting on the metallic substrate.This may be due to SiO
2-Al
2o
3in the insulating barrier of structure, SiO
2and Al
2o
3elastic modelling quantity and thermal coefficient of expansion all differ comparatively large, along with temperature raises, cause membrane stress to increase, occurring ftractureing even comes off.And electron beam evaporation Cr
3c
2(1 μm)-electron beam evaporation Al
2o
3(4 μm) serviceability temperature in stainless steel metal substrate is 950 DEG C, but electron beam evaporation Cr
3c
2-electron beam evaporation Al
2o
3in insulation layer structure, Cr
3c
2under 1100 DEG C of high temperature, sheet resistance is 80 × 10-
6Ω .cm is the good conductor of electricity, and at high temperature may be oxidized, causes insulation layer fails.And electron beam evaporation YSZ (zirconia that yttrium is stable) (1 μm)-electron beam evaporation Al
2o
3(4 μm) structure insulating layer is at Al
2o
3the effective serviceability temperature of insulation on ceramic substrate 1080 DEG C, but in stainless steel metal substrate poor adhesion, directly come off before recording any data, this may be due to electron beam evaporation YSZ-electron beam evaporation Al
2o
3in insulation layer structure, the YSZ of electron beam evaporation is non crystalline structure, and thermal coefficient of expansion differs comparatively large with stainless steel metal, on the stainless steel-based end, adhesive force is not strong, has occurred situation about coming off.In sum, the insulating barrier of at present preparation can not meet the normal work of thin film sensor under high temperature, the adverse circumstances such as heavily stressed.
Summary of the invention
The present invention is directed to the defect that background technology exists, propose a kind of Metal Substrate high-temperature insulating layer and preparation method thereof, this insulating barrier can ensure at least at 800 DEG C, good electrical between thin film sensor functional layer and metallic substrates insulate, and after annealing under long-time hot environment, insulaion resistance can not reduce, and has the trend of increase.
Technical scheme of the present invention is as follows:
A kind of Metal Substrate high-temperature insulating layer, comprising six Rotating fields, is alloy substrates 1, NiCrAlY alloy transition layer 2, α-Al from the bottom up successively
2o
3layer 3, crystalline state YSZ layer 4, amorphous state YSZ layer 5, Al
2o
3layer 6, wherein α-Al
2o
3layer adopts thermal oxidation method to obtain, and crystalline state YSZ layer and amorphous state YSZ layer all adopt sputtering method to obtain, Al
2o
3layer 6 adopts electron-beam vapor deposition method to prepare.
Wherein, the thickness of described NiCrAlY alloy transition layer 2 is 10 ~ 12 μm, α-Al
2o
3the thickness of layer 3 is 500nm ~ 1 μm, and the thickness of crystalline state YSZ layer 4 is 0.5 ~ 1 μm, and the thickness of amorphous state YSZ layer 5 is 0.5 ~ 1 μm, Al
2o
3the thickness of layer 6 is 8 ~ 12 μm.
Wherein said crystalline state YSZ layer adopts the constant temperature sputtering at 500 DEG C of temperature of the method for magnetron sputtering to obtain, and described amorphous state YSZ layer 5 adopts the method for magnetron sputtering to cool to sputtering in the temperature-fall period of room temperature at 500 DEG C to obtain.
A preparation method for Metal Substrate high-temperature insulating layer, comprises the following steps:
A. the surface treatment of substrate: first carry out polishing to substrate, then adopts acetone, ethanol and the deionized water surface to substrate to clean successively, dries up for subsequent use after cleaning with nitrogen;
The preparation of B.NiCrAlY alloy transition layer: adopt deposition on substrate NiCrAlY film that the method for magnetically controlled DC sputtering obtains after processing of step A as transition zone;
C. α-Al
2o
3the preparation of layer: the substrate of the band NiCrAlY alloy transition layer obtained by step B is placed in vacuum tube furnace, 5 × 10
-4pa ~ 5 × 10
-5at Pa vacuum and 1050 DEG C of temperature, constant temperature 5 hours, precipitating metal aluminium; Then continue the temperature of maintenance 1050 DEG C, in tube furnace, pass into oxygen, constant temperature 5 hours, make alumina turn to α-Al
2o
3after, be cooled to room temperature with stove, obtain 500nm ~ 1 μm thick α-Al
2o
3layer;
D. the preparation of crystalline state YSZ layer: the method adopting rf magnetron sputtering, the band NiCrAlY alloy transition layer that step C is obtained and α-Al
2o
3under the substrate of layer is placed in vacuum atmosphere and 500 DEG C of temperature, employings YSZ is target, sputters and obtains 0.5 ~ 1 μm of thick crystalline state YSZ layer;
E. the preparation of amorphous state YSZ layer: adopt the method for rf magnetron sputtering, cool in the temperature-fall period of room temperature vacuum atmosphere and 500 DEG C, employings YSZ is target, the composite substrate that step D obtains sputters and obtains 0.5 ~ 1 μm of thick amorphous state YSZ layer;
F.Al
2o
3the preparation of layer: under composite substrate step e obtained is placed in vacuum atmosphere, adopts method evaporation at 400 DEG C of electron beam evaporation to obtain 8 ~ 12 μm of thick Al
2o
3; Then in-situ annealing 1 hour at 800 DEG C of temperature; Take out composite substrate after cooling, anneal 2 hours under atmospheric environment, at 800 DEG C of temperature, obtain described Al
2o
3layer 6; Thus obtain described Metal Substrate high-temperature insulating layer.
Wherein, the process of the preparation NiCrAlY alloy transition layer described in step B is: be 5 × 10 in back end vacuum
-3pa, sputtering pressure are 0.35Pa, temperature is 450 ~ 500 DEG C, sputtering power is under the condition of 500W, with NiCrAlY alloy for target, the argon gas of 99.99% is not less than as sputtering medium using volume percentage purity, sputter 5 hours, obtain the NiCrAlY alloy transition layer that thickness is 10 ~ 12 μm.
Wherein, the vacuum atmosphere described in step D is 5 × 10
-4the purity of Pa, YSZ target is not less than 99.99%.
Wherein, the vacuum atmosphere described in step e is 5 × 10
-4the purity of Pa, YSZ target is not less than 99.99%.
Wherein, the vacuum atmosphere described in step F is 5 × 10
-4pa, the raw material that described evaporation adopts to be diameter the be Al of 1 ~ 3 millimeter
2o
3particle.
Beneficial effect of the present invention is:
1, the α-Al of Metal Substrate high-temperature insulating layer provided by the invention
2o
3layer be NiCrAlY film through high-temperature vacuum heat treatment precipitating metal aluminium, then high-temperature oxydation obtains, and making has good adhesiveness, difficult drop-off between insulating barrier and substrate.
2, the crystalline state YSZ layer in Metal Substrate high-temperature insulating layer provided by the invention and α-Al
2o
3layer attachment is good; And amorphous state YSZ layer makes hole and crack be fully filled, make YSZ layer even compact more, thus reduce leak channel, promote insulating properties.
3, the α-Al in the present invention
2o
3-YSZ-Al
2o
3sandwich structure promotes that the hole at different materials surface and interface place and crack are filled mutually, further reduces the leak channel of whole insulating barrier; YSZ and Al simultaneously
2o
3thermal coefficient of expansion is more close, and ftracture after decreasing long-time high-temperature process the possibility come off.
Accompanying drawing explanation
Fig. 1 is the structural representation of Metal Substrate high-temperature insulating layer of the present invention.
Fig. 2 is the curve map of the insulaion resistance-temperature of the Metal Substrate high-temperature insulating layer that embodiment obtains.
Fig. 3 is that Metal Substrate high-temperature insulating layer that embodiment obtains is annealed the insulaion resistance curve map obtained at 800 DEG C.
Wherein, 1 is alloy substrates, and 2 is NiCrAlY alloy transition layer, and 3 is α-Al
2o
3layer, 4 is crystalline state YSZ layer, and 5 is amorphous state YSZ layer, and 6 is Al
2o
3layer.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described further.
Embodiment
A preparation method for Metal Substrate high-temperature insulating layer, comprises the following steps:
A. the surface treatment of substrate: adopt nickel (Ni) the base alloy of (long × wide × thick) 30 × 95 × 5 as substrate, first polishing is carried out to substrate surface, require to be polished to minute surface, without macroscopic cut; Then adopt acetone, ethanol and deionized water to clean substrate surface successively, dry up with nitrogen for subsequent use after cleaning;
Prepared by B, NiCrAlY alloy transition layer: it is 5 × 10 that the Ni base alloy substrates cleaned up is placed in vacuum
-3in vacuum (the i.e. back end vacuum) environment of Pa, with NiCrAlY alloy for target, passing into purity is that the argon gas of 99.99% (percent by volume) is as sputtering medium, under 500 DEG C of temperature, power 500W, sputtering pressure (operating air pressure) condition that is 0.35Pa, adopt the method for magnetically controlled DC sputtering on Ni base alloy substrates, deposit 12 μm of thick NiCrAlY alloy transition layers;
C. α-Al
2o
3the preparation of layer: the composite substrate obtained by step B is placed in quartz tube type annealing furnace, 5 × 10
-4under Pa vacuum condition, after being warming up to 1050 DEG C with the heating rate of 5 DEG C/min, constant temperature (process) 5 hours precipitating metal aluminium; Then continue the temperature of maintenance 1050 DEG C, in tubular annealing stove, pass into the oxygen that purity is 99.9%, constant temperature process 5 hours, make alumina turn to α-Al
2o
3after, stop heat and continue to lead to oxygen until cool to room temperature stops, obtaining 1 μm of thick α-Al
2o
3layer;
D. the preparation of crystalline state YSZ layer: the band NiCrAlY alloy transition layer that step C is obtained and α-Al
2o
3the substrate of layer is placed in 5 × 10
-4in Pa (i.e. back end vacuum) environment, take purity as YSZ ceramic target (the wherein Y of 99.99%
2o
3content be 12%) as sputtering target material, using the gaseous mixture of oxygen and argon gas as sputtering medium (oxygen and argon gas are 99.9% with the purity of volume percentage), the flow-rate ratio of oxygen and argon gas is 35:5, under 500 DEG C of temperature, power 200W, sputtering pressure (operating air pressure) condition that is 2Pa, the sputtering of the method for rf magnetron sputtering is adopted to obtain the crystalline state YSZ layer of 1 μm;
E. the preparation of amorphous state YSZ layer: the composite substrate obtained after step D process is 5 × 10
-4in Pa (i.e. back end vacuum) environment, take purity as YSZ ceramic target (the wherein Y of 99.99%
2o
3content be 12%) as sputtering target material, using the gaseous mixture of oxygen and argon gas as sputtering medium (oxygen and argon gas are 99.9% with the purity of volume percentage), the flow-rate ratio of oxygen and argon gas is 35:5, be 200W at 500 DEG C to (rate of temperature fall is 4 DEG C/min) in the temperature-fall period of room temperature, power, under sputtering pressure (operating air pressure) condition that is 2Pa, adopt the sputtering of the method for rf magnetron sputtering to obtain the amorphous state YSZ layer of 1 μm;
F.Al
2o
3the preparation of layer: be 5 × 10 in back end vacuum by the composite substrate obtained after step e process
-4under the condition of Pa, employing diameter is the Al of 1 millimeter
2o
3particle is evaporation raw material, 400 DEG C, evaporation electronic beam current adopts the method evaporation of electron beam evaporation to obtain 10 μm of thick Al under being the condition of 75mA
2o
3, at 800 DEG C of temperature, in-situ annealing 1 hour, naturally cools to room temperature; The composite substrate taken out is annealed 2 hours under atmospheric environment, at 800 DEG C of temperature, namely obtains Al
2o
3layer 6; Thus obtain Metal Substrate high-temperature insulating layer of the present invention.
Testing and analysis is carried out to the performance of the Metal Substrate high-temperature insulating layer that the embodiment of the present invention obtains below:
Fig. 2 is the curve map of the insulaion resistance-temperature of the Metal Substrate high-temperature insulating layer that embodiment obtains.As shown in Figure 2, the insulating barrier that embodiment obtains in room temperature within the scope of 800 DEG C, insulaion resistance is in approximate exponential relationship, when 800 DEG C, insulaion resistance is greater than 100K Ω, this illustrates that insulating barrier has good insulating properties being less than within the scope of 800 DEG C, can meet the electric insulation between device and metallic substrates.
Fig. 3 is that Metal Substrate high-temperature insulating layer that embodiment obtains is annealed the insulaion resistance curve map obtained at 800 DEG C.As shown in Figure 3, the insulating barrier that embodiment obtains is in 800 DEG C of long term annealing experiments, and insulaion resistance performance is the trend increased.This may be conducive to stablizing of insulation layer structure under high temperature, and make film become finer and close, insulating properties promote.
Claims (3)
1. a Metal Substrate high-temperature insulating layer, comprises six Rotating fields, is alloy substrates (1), NiCrAlY alloy transition layer (2), α-Al from the bottom up successively
2o
3layer (3), crystalline state YSZ layer (4), amorphous state YSZ layer (5), Al
2o
3layer (6), wherein α-Al
2o
3layer adopts thermal oxidation method to obtain, and crystalline state YSZ layer and amorphous state YSZ layer all adopt sputtering method to obtain, Al
2o
3layer adopts electron-beam vapor deposition method to prepare.
2. Metal Substrate high-temperature insulating layer according to claim 1, is characterized in that, the thickness of described NiCrAlY alloy transition layer (2) is 10 ~ 12 μm, α-Al
2o
3the thickness of layer (3) is 500nm ~ 1 μm, and the thickness of crystalline state YSZ layer (4) is 0.5 ~ 1 μm, and the thickness of amorphous state YSZ layer (5) is 0.5 ~ 1 μm, Al
2o
3the thickness of layer (6) is 8 ~ 12 μm.
3. a preparation method for Metal Substrate high-temperature insulating layer, comprises the following steps:
A. the surface treatment of substrate: first carry out polishing to substrate, then adopts acetone, ethanol and the deionized water surface to substrate to clean successively, dries up for subsequent use after cleaning with nitrogen;
The preparation of B.NiCrAlY alloy transition layer: adopt deposition on substrate NiCrAlY film that the method for magnetically controlled DC sputtering obtains after processing of step A as transition zone, detailed process is: be 5 × 10 in back end vacuum
-3pa, sputtering pressure are 0.35Pa, temperature is 450 ~ 500 DEG C, sputtering power is under the condition of 500W, with NiCrAlY alloy for target, the argon gas of 99.99% is not less than as sputtering medium using volume percentage purity, sputter 5 hours, obtain the NiCrAlY alloy transition layer that thickness is 10 ~ 12 μm;
C. α-Al
2o
3the preparation of layer: the substrate of the band NiCrAlY alloy transition layer obtained by step B is placed in vacuum tube furnace, 5 × 10
-4pa ~ 5 × 10
-5at Pa vacuum and 1050 DEG C of temperature, constant temperature 5 hours, precipitating metal aluminium; Then continue the temperature of maintenance 1050 DEG C, in tube furnace, pass into oxygen, constant temperature 5 hours, make alumina turn to α-Al
2o
3after, be cooled to room temperature with stove, obtain 500nm ~ 1 μm thick α-Al
2o
3layer;
D. the preparation of crystalline state YSZ layer: the method adopting rf magnetron sputtering, the band NiCrAlY alloy transition layer that step C is obtained and α-Al
2o
3the substrate of layer is placed in 5 × 10
-4at Pa vacuum atmosphere and 500 DEG C of temperature, to adopt purity to be not less than 99.99%YSZ be target, and sputtering obtains 0.5 ~ 1 μm of thick crystalline state YSZ layer;
E. the preparation of amorphous state YSZ layer: the method adopting rf magnetron sputtering, 5 × 10
-4pa vacuum atmosphere and 500 DEG C cool in the temperature-fall period of room temperature, and adopting purity to be not less than 99.99%YSZ is target, and on the composite substrate that step D obtains, sputtering obtains 0.5 ~ 1 μm of thick amorphous state YSZ layer;
F.Al
2o
3the preparation of layer: composite substrate step e obtained is placed in 5 × 10
-4under Pa vacuum atmosphere, method evaporation at 400 DEG C of electron beam evaporation is adopted to obtain 8 ~ 12 μm of thick Al
2o
3, evaporation raw material to be diameter the be Al of 1 ~ 3 millimeter
2o
3particle; Then in-situ annealing 1 hour at 800 DEG C of temperature; Take out composite substrate after cooling, anneal 2 hours under atmospheric environment, at 800 DEG C of temperature, obtain described Al
2o
3layer (6); Thus obtain described Metal Substrate high-temperature insulating layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536892A (en) * | 2019-01-17 | 2019-03-29 | 电子科技大学 | A kind of high temperature film sensor heat shock resistance composite insulation layer and preparation method thereof |
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|---|---|---|---|---|
| CN104726862B (en) * | 2015-03-10 | 2018-06-19 | 电子科技大学 | A kind of metal-base film sensor with composite insulation layer and preparation method thereof |
| CN105274475A (en) * | 2015-11-27 | 2016-01-27 | 中山市厚源电子科技有限公司 | Membrane sensor and manufacturing method thereof |
| CN105970168B (en) * | 2016-07-04 | 2018-07-27 | 电子科技大学 | A kind of thin film sensor composite insulation layer and preparation method thereof |
| CN106756848B (en) * | 2016-12-21 | 2019-05-14 | 电子科技大学 | A kind of Metal Substrate high temperature combined insulation layer and preparation method thereof |
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| CN112611315B (en) * | 2020-11-25 | 2023-12-19 | 陕西电器研究所 | Ion beam sputtering film high-temperature strain gauge and preparation method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5484263A (en) * | 1994-10-17 | 1996-01-16 | General Electric Company | Non-degrading reflective coating system for high temperature heat shields and a method therefor |
| EP1063213A1 (en) * | 1999-06-21 | 2000-12-27 | General Electric Company | Ceramic superalloy articles |
| CN101894904A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | Metal-base film thermocouple and preparation method thereof |
| CN102212823A (en) * | 2011-05-13 | 2011-10-12 | 电子科技大学 | Method for arranging film sensor on alloy substrate |
| CN103266320A (en) * | 2013-05-30 | 2013-08-28 | 电子科技大学 | High temperature oxidation resistant film sensor and production method thereof |
| CN103486961A (en) * | 2013-05-31 | 2014-01-01 | 电子科技大学 | Component with thin film sensor and preparation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2645894B2 (en) * | 1989-08-23 | 1997-08-25 | 住友大阪セメント株式会社 | Method for producing zirconia ceramics |
-
2014
- 2014-08-22 CN CN201410418821.7A patent/CN104149416B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5484263A (en) * | 1994-10-17 | 1996-01-16 | General Electric Company | Non-degrading reflective coating system for high temperature heat shields and a method therefor |
| EP1063213A1 (en) * | 1999-06-21 | 2000-12-27 | General Electric Company | Ceramic superalloy articles |
| CN101894904A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | Metal-base film thermocouple and preparation method thereof |
| CN102212823A (en) * | 2011-05-13 | 2011-10-12 | 电子科技大学 | Method for arranging film sensor on alloy substrate |
| CN103266320A (en) * | 2013-05-30 | 2013-08-28 | 电子科技大学 | High temperature oxidation resistant film sensor and production method thereof |
| CN103486961A (en) * | 2013-05-31 | 2014-01-01 | 电子科技大学 | Component with thin film sensor and preparation method |
Non-Patent Citations (1)
| Title |
|---|
| "YSZ/Al2O3/YSZ多层陶瓷叠层制备方法的研究";王晓昳等;《硅酸盐通报》;20120430;第31卷(第2期);382-385 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536892A (en) * | 2019-01-17 | 2019-03-29 | 电子科技大学 | A kind of high temperature film sensor heat shock resistance composite insulation layer and preparation method thereof |
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