CN102212823A - Method for arranging film sensor on alloy substrate - Google Patents
Method for arranging film sensor on alloy substrate Download PDFInfo
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- CN102212823A CN102212823A CN201110123372XA CN201110123372A CN102212823A CN 102212823 A CN102212823 A CN 102212823A CN 201110123372X A CN201110123372X A CN 201110123372XA CN 201110123372 A CN201110123372 A CN 201110123372A CN 102212823 A CN102212823 A CN 102212823A
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Abstract
The invention discloses a method for producing a film sensor by using a turbine engine blade to be detected or the like as a substrate in the field of film sensors. The method comprises the following steps of: treating the surface of an alloy substrate, depositing a NiCrAlY alloy transition layer on the alloy substrate, separating out metallic aluminum, sputtering a metallic aluminum layer, performing oxidation treatment, setting an Al2O3 ceramic insulating layer, and setting a functional layer and an Al2O3 protective layer of the film sensor. A layer of metallic aluminum is directly sputtered after the aluminum of certain thickness is separated out of the NiCrAlY layer, and the separated aluminum and the sputtered aluminum are uniformly distributed on the surface of the NiCrAlY transition layer and then oxidized to generate an Al2O3 connecting transition layer; and the thickness of the NiCrAlY layer is only about 1/20 of the background technology. Therefore, the method has the characteristics that: the NiCrAlY transition layer is thin, the connecting strength of the NiCrAlY transition layer and the Al2O3 ceramic insulating layer is high, the preparation difficulty and the production cost are low, and the method is safe and reliable during working in the environment of about 1,000 DEG C and can provide accurate and reliable design proof for research and design of a turbine engine and the like.
Description
Technical field
The invention belongs to thin film sensor design and production technical field, particularly a kind of with turbine engine blade to be measured, Inner Wall of Combustion Chamber etc. as alloy substrate, directly the method for thin film sensor is set on surfaces such as turbine engine blade to be measured, Inner Wall of Combustion Chambers, this type of thermocouple can be widely used in the measurement of turbine engine blade, combustion chamber etc. being carried out the surface temperature distribution state, for research and the design of turbogenerator provides accordingly, more accurate basic data.
Background technology
Modern aeroengine when work, be in the adverse circumstances such as high temperature that fuel gas buring produces, high pressure owing to turbo blade and combustion chamber, turbo blade and combustor surface temperature sharply raise, produce simultaneously bigger thermal strain, and the Temperature Distribution of turbo blade and combustor surface and thermal strain thereof are very big to performance and the impact in life-span of turbogenerator; And often there is hot localised points in turbine blade surface and turbo blade etc. is produced serious harm.In modern aeroengine design and experimental study, engine operating temperature is the important parameter of modern turbine engine performance quality always; In order to verify the performance of cold effect effect of high temperature parts such as turbine blade, combustion chamber and thermal barrier coating, accurately parameters such as the temperature distribution of turbine blade and combustor surface and thermal stress state thereof under the surveying work state are most important to the design of engine.
The metal-base film sensor technology of preparing that adopts at present is on the alloy substrate, under the temperature about 600 ℃, deposits NiCrAlY (nichrome-chromium-aluminium-yttrium) alloy transition layer with argon gas as reaction medium, employing magnetically controlled sputter method; The NiCrAlY transition zone of preparation separates out processings in vacuum and 1000 ℃ of temperature, with at surperficial precipitating metal aluminium, the aluminium of separating out under normal pressure through thermal oxide generation Al
2O
3Layer; Again at this Al
2O
3On the layer, adopt Al
2O
3Raw material through electron-beam vapor deposition method in 600～900 ℃ of temperature ranges and 10
-310
-2The thick about 20 μ m left and right sides Al of evaporation under the pa vacuum
2O
3Ceramic insulating layer; Then at Al
2O
3Preparation thin film sensor functional layer on the ceramic insulating layer; At last under the temperature about 600 ℃, adopt electron-beam vapor deposition method evaporating Al on gained thin film sensor functional layer (thermocouple membrane electrode group) and insulating barrier
2O
3Protective layer.There is following defective in this type of thin film sensor in preparation process: the one, and in order to make NiCrAlY transition zone and Al
2O
3Good adhesive force is arranged between the insulating barrier, it is thick and require to be uniformly distributed in the transition zone surface that the Al layer of separating out on the NiCrAlY surface then must reach 1-2 μ m, and thick, the thickness that requires just to need the NiCrAlY layer that will reach that desired Al chromatography goes out is more than 100 μ m, difficulty very all the adhesion between that this needs to reach follow-up high-temperature heat treatment process from the preparation of transition zone or transition zone and the substrate; The 2nd, the Al that separates out from the NiCrAlY transition zone is generally island and distributes, rather than uniform covering surfaces, like this so that the Al that separates out is carried out in the thermal oxidation process, the surface is except formation Al
2O
3In addition, also have the oxide that nickel oxide etc. has open structure and produce, this connects transition zone Al to follow-up evaporation
2O
3Quality and the structure generation harmful effect of device, especially surpassing under 800 ℃ the high-temperature work environment, cause Al because coefficient of thermal expansion (coefficient) differs
2O
3The coming off and then cause the disadvantages such as thin film sensor inefficacy of insulating barrier.
Summary of the invention
The objective of the invention is defective at the background technology existence, a kind of method that thin film sensor is set on alloy substrate of research and design, to realize on thin film sensor and the incorporate basis of UUT, reach the difficulty that reduces significantly the requirement and the preparation of NiCrAlY transition region thickness, effectively improve security and the reliability that transmitter uses under 1000 ℃ of left and right sides Working environments, for the research and the design of turbine engine provides accordingly, purpose such as accurate basic data more.
Solution of the present invention is after former NiCrAlY transition zone is separated out aluminium (Al) element, directly the aluminium (Al) of separating out is carried out oxidation processes, generates Al
2O
3Layer (also having generated the weaker zones such as nickel oxide harmful to device architecture simultaneously); Change at the NiCrAlY transition zone and separate out the direct sputter layer of metal of the mode aluminium (Al) that certain thickness aluminium (Al) is rear, adopt magnetron sputtering, make sputter layer of metal aluminium (Al) and the aluminium (Al) of separating out be fused into one and be uniformly distributed in the surface of NiCrAlY1 transition zone, and then to this metallic aluminium (Al) layer carry out oxidation processes, to generate Al
2O
3Connect transition zone, thereby both decrease had prevented again the generation of the oxides such as nickel oxide of short texture to the difficulty of requirement and the preparation of NiCrAlY transition region thickness, this Al of Effective Raise
2O
3Connect the Al on transition zone and the evaporation thereafter
2O
3The linking intensity of ceramic insulating layer; At last according to a conventional method at Al
2O
3Preparation thin film sensor functional layer and evaporating Al on the ceramic insulating layer
2O
3Protective layer, thus realize its goal of the invention.Therefore, the present invention's method that thin film sensor is set on alloy substrate comprises:
A. the surface treatment of alloy substrate: elder generation, rear employing acetone and ethanol clean the surface of alloy substrate to be measured, clean to be placed on drying under the blanket of nitrogen;
B. at alloy substrate deposition NiCrAlY alloy transition layer: adopt conventional magnetically controlled sputter method with the NiCrAlY alloy deposition on the alloy substrate after the processing of step A, as transition zone, must be with the composite base plate of NiCrAlY alloy transition layer;
C. separating out of metallic aluminium: step B gained composite base plate is placed in the vacuum heat treatment furnace, 10
-3-10
-5Under Pa vacuum and the 900-1300 ℃ temperature condition, be heated to thickness that metallic aluminium separates out reach 100-300nm after, cool to normal temperature with the furnace, must separate out the composite base plate of layer with NiCrAlY alloy transition layer and metallic aluminium;
D. splash-proofing sputtering metal aluminium lamination: on the composite base plate after handling, adopt conventional magnetically controlled sputter method that metallic aluminium (Al) is deposited on aluminium to separate out on the layer through step C, the metallic aluminium (Al) that makes sedimentary metallic aluminium (Al) and separate out is fused into one and the thickness of uniform distribution (covering) in NiCrAlY transition layer surface only reaches 1-2 μ m, changes step e then and carries out oxide treatment;
E. oxidation processes: under oxygen atmosphere, at the uniform velocity be warming up to 900-1100 ℃ after, constant temperature 4-10h (hour), what make the metallic aluminium layer thickness is completely oxidized to Al more than 50%
2O
3Afterwards, be cooled to room temperature, must be with NiCrAlY alloy transition layer and Al
2O
3The composite base plate that connects transition zone;
F., Al is set
2O
3Ceramic insulating layer: adopt conventional vacuum vapour deposition, will place through the composite base plate after the step e oxidation processes under vacuum atmosphere and 500-600 ℃, adopt high-purity Al
2O
3Be the evaporation raw material, at the Al of composite base plate
2O
3The thick Al of surface deposition 3-10 μ m that connects transition zone
2O
3The pottery, as insulating barrier;
G., thin film sensor functional layer and Al are set
2O
3Protective layer: will place through the composite base plate that step F makes under the vacuum atmosphere according to a conventional method, and adopt magnetron sputtering or electron beam evaporation method at Al
2O
3Each thin film sensor is set on the ceramic insulating layer; Then at Al
2O
3Ceramic insulating layer and sensor function layer surface still according to a conventional method, under vacuum atmosphere and 500-600 ℃ of temperature, adopt the method for electron beam evaporation at Al
2O
3Al on the surperficial evaporation of insulating barrier and thin film sensor
2O
3Protective layer, to Al
2O
3The upper surface of protective layer is that 1.0-2.0 μ m ends to the thickness of thin film sensor upper surface; Thereby make thin film sensor of the present invention.
Above institute art alloy substrate is Ni base alloy sheets or stainless steel substrate.At conventional magnetically controlled sputter method described in the step D is direct current magnetron sputtering process, radio-frequency magnetron sputter method or medium frequency magnetron sputtering method, is 6.0 * 10 in back of the body end vacuum tightness
-4Pa, operating air pressure are under 0.5Pa and the room temperature condition, and the Al that is not less than 99.99wt% in purity is target, be to be not less than 99.999% argon gas to carry out sputter process as the sputter medium with volume percent purity.The described conventional vacuum vapour deposition of step F, its vacuum tightness are 10
-3-10
-5Pa, and described employing high purity Al
2O
3Be evaporation raw material, raw material A l
2O
3Purity be not less than 99.99wt%.
The present invention is because employing is separated out the direct sputter layer of metal of the mode aluminium (Al) that certain thickness aluminium (Al) is rear, adopt magnetron sputtering at the NiCrAlY transition zone, make sputter layer of metal aluminium (Al) and the aluminium (Al) of separating out be fused into one and be uniformly distributed in the surface of NiCrAlY1 transition zone, and then to this metallic aluminium (Al) layer carry out oxidation processes, to generate Al
2O
3Connect transition zone; The thickness that adopts the inventive method NiCrAlY transition zone is down to about 5 μ m of the present invention, namely only is about 1/20th of background technology from 100 μ m of background technology, thus decrease the difficulty of NiCrAlY transition zone preparation and the cost of preparation; Simultaneously Effective Raise the safety and reliability that under 1000 ℃ of environment, uses of thin film sensor.Thereby the present invention to have thin thickness, preparation difficulty and a production cost of NiCrAlY transition zone low, but and Effective Raise and Al
2O
3The linking intensity height of ceramic insulating layer makes working environment safety, reliably working that they can be about 1000 ℃, is the characteristics such as exploitation, the design of the research of turbogenerator and new product provides accurately, reliably design considerations.
Description of drawings
Fig. 1 is a thin film sensor structural representation of the present invention (sectional view).
Among the figure: 1. alloy substrate to be measured, 2. alloy transition layer, 3.Al
2O
3Connect transition zone, 4.Al
2O
3Ceramic insulating layer, 5. (film) sensor function layer, 6.Al
2O
3Protective layer.
Embodiment
With the basic alloy sheets of nickel (Ni) as alloy substrate 1 to be measured, and to prepare K type NiCr-NiSi thermopair thin film sensor thereon be example:
A. the surface treatment of alloy substrate: adopting the basic alloy sheets of nickel (Ni) of (length * wide * thick) 30 * 95 * 5mm is alloy substrate 1 to be measured, and elder generation, back adopt acetone and ethanol that the surface of alloy substrate to be measured is cleaned, and cleans and is placed on drying under the nitrogen atmosphere;
B. deposit NiCrAlY alloy transition layer on alloy substrate: it is 6.0 * 10 that the Ni base alloy substrate 1 that cleans up is placed vacuum tightness
-4In the vacuum of pa (promptly the carrying on the back end vacuum) environment, with the NiCrAlY alloy is target, input purity is that the argon gas of 99.999% (volume percent) is as the sputter medium, at 600 ℃ of temperature, power 200W, sputtering pressure (operating pressure) is under the condition of 0.5Pa, adopt dc magnetron sputtering method with the NiCrAlY alloy deposition on Ni base alloy substrate 1, deposit thickness 5 μ m, must cover the composite base plate of NiCrAlY alloy transition layer 2;
C. separating out of metallic aluminium: the composite base plate that step B makes is put into vacuum heat treatment furnace, 5 * 10
-4After rising to 1000 ℃ under the pa vacuum condition, with the heat-up rate of 10 ℃/min, constant temperature (processing) 5h, under vacuum condition, cool to normal temperature with the furnace then; This process separates out the Al element in the transition layer to the surface, forms the thick metal aluminium lamination of the about 200nm of one deck on the transition layer surface;
D. splash-proofing sputtering metal aluminium lamination: will be placed back of the body end vacuum tightness by the composite base plate that step C makes is 6.0 * 10
-4In the sputter process device of pa, with purity is that 99.99% Al is a target, input purity is that the argon gas of 99.999% (volume percent) is as the sputter medium, at room temperature, power 100W, sputtering pressure (operating air pressure) is under the condition of 0.5Pa, adopt dc magnetron sputtering method that Al is deposited on the composite base plate, the metallic aluminium (Al) that makes sedimentary metallic aluminium (Al) and separate out is fused into one and is uniformly distributed on NiCrAlY transition layer 2 surfaces, its thickness reaches 1.5 μ m to be ended, and obtains the composite base plate that the surface evenly covers the metal aluminium lamination;
E. oxidation processes: the composite base plate that step D makes is put into atmosphere sintering furnace, passing into purity and be 99.999% oxygen, rise to 1000 ℃, constant temperature with the programming rate of 15 ℃/min and process 6h, is Al with the top thick metallic aluminium complete oxidation of 0.95 μ m of the metal aluminium lamination on composite base plate surface
2O
3(the thick following part of 0.95 μ m this moment is Al
2O
3With the mixed layer of Al) after, stop to heat and continue logical oxygen until be cooled to room temperature and end, obtain surface coverage Al
2O
3The composite base plate that connects transition zone 3;
F arranges Al
2O
3Ceramic insulating layer: be 6.0 * 10 in the back end vacuum with the composite base plate after step e is processed
-4Under the condition of pa, to adopt purity be the Al of 99.999wt%
2O
3Being the evaporation raw material, is evaporation under the condition of 60mA at 550 ℃, evaporation electronic beam current, with Al
2O
3Be deposited on the composite base plate, get the Al that thickness is 8 μ m
2O
3 Ceramic insulating layer 4;
G., thin film sensor functional layer and Al are set
2O
3Protective layer: be 6.0 * 10 in the back end vacuum
-4Pa, take argon gas as reaction medium, Ni90Cr10 and Ni97Si3 as target, room temperature, and power be that 100W, operating air pressure are under the condition of 0.4Pa, adopt conventional magnetically controlled sputter method at Al
2O
3The surface of ceramic insulating layer 4 deposits successively 2, thickness and is the NiCr-NiSi thermocouple of 1 μ m as (film) sensor function layer 5; Then, be 6.0 * 10 in the back end vacuum
-4Pa, employing purity are the Al of 99.999wt%
2O
3Being the evaporation raw material, is under the condition of 60mA at 550 ℃, evaporation electronic beam current, still adopts conventional electrical beam evaporation method at Al
2O
3The surperficial evaporating Al of insulating barrier 4 and (film) sensor function layer 5
2O
3 Protective layer 6 ends to (film) sensor function layer 5 upper surface 1.5 μ m are thick; Thereby make metal-base film sensor of the present invention.
The thickness that adopts NiCrAlY transition zone 2 in the metal-base film sensor of present embodiment preparation only 5 μ m, in the time of 1000 ℃, Al
2O
3The resistance of ceramic insulating layer 4 reaches 5k Ω, satisfies the instructions for use that high temperature is used the metal-base film sensor fully; Whole metal-base film sensor can safety, reliably use in 1000 ℃ of environment.
Claims (4)
1. method that thin film sensor is set on alloy substrate comprises:
A. the surface treatment of alloy substrate: elder generation, rear employing acetone and ethanol clean the surface of alloy substrate to be measured, clean to be placed on drying under the blanket of nitrogen;
B. at alloy substrate deposition NiCrAlY alloy transition layer: adopt conventional magnetically controlled sputter method with the NiCrAlY alloy deposition on the alloy substrate after the processing of step A, as transition zone, must be with the composite base plate of NiCrAlY alloy transition layer;
C. separating out of metallic aluminium: step B gained composite base plate is placed in the vacuum heat treatment furnace, 10
-310
-5Under Pa vacuum and the 900-1300 ℃ temperature condition, be heated to thickness that metallic aluminium separates out reach 100-300nm after, cool to normal temperature with the furnace, must separate out the composite base plate of layer with NiCrAlY alloy transition layer and metallic aluminium;
D. splash-proofing sputtering metal aluminium lamination: on the composite base plate after handling, adopt conventional magnetically controlled sputter method that metallic aluminium is deposited on aluminium to separate out on the layer through step C, the thickness that makes the sedimentary metallic aluminium and the metallic aluminium of separating out be fused into one and be uniformly distributed in NiCrAlY transition layer surface reaches 1-2 μ m to be ended, and changes step e then and carries out oxide treatment;
E. oxidation processes: under oxygen atmosphere, at the uniform velocity be warming up to 900-1100 ℃ after, constant temperature 4-10h, what make the metallic aluminium layer thickness is completely oxidized to Al more than 50%
2O
3Afterwards, be cooled to room temperature, must be with NiCrAlY alloy transition layer and Al
2O
3The composite base plate that connects transition zone;
F., Al is set
2O
3Ceramic insulating layer: adopt conventional vacuum vapour deposition, will place through the composite base plate after the step e oxidation processes under vacuum atmosphere and 500-600 ℃, adopt high-purity Al
2O
3Be the evaporation raw material, at the Al of composite base plate
2O
3The thick Al of surface deposition 3-10 μ m that connects transition zone
2O
3The pottery, as insulating barrier;
G., thin film sensor functional layer and Al are set
2O
3Protective layer: will place through the composite base plate that step F makes under the vacuum atmosphere according to a conventional method, and adopt magnetron sputtering or electron beam evaporation method at Al
2O
3Each thin film sensor is set on the ceramic insulating layer; Then at Al
2O
3Ceramic insulating layer and sensor function layer surface still according to a conventional method, under vacuum atmosphere and 500-600 ℃ of temperature, adopt the method for electron beam evaporation at Al
2O
3Al on the surperficial evaporation of insulating barrier and thin film sensor
2O
3Protective layer, to Al
2O
3The upper surface of protective layer is that 1.0-2.0 μ m ends to the thickness of thin film sensor upper surface; Thereby make thin film sensor of the present invention.
2. by the described method that thin film sensor is set of claim 1, it is characterized in that described alloy substrate is Ni base alloy sheets or stainless steel substrate on alloy substrate.
3. by the described method that thin film sensor is set of claim 1, it is characterized in that at conventional magnetically controlled sputter method described in the step D be direct current magnetron sputtering process, radio-frequency magnetron sputter method or medium frequency magnetron sputtering method on alloy substrate, is 6.0 * 10 in back of the body end vacuum tightness
-4Pa, operating air pressure are under 0.5Pa and the room temperature condition, and the Al that is not less than 99.99wt% in purity is target, be to be not less than 99.999% argon gas to carry out sputter process as the sputter medium with volume percent purity.
4. by the described method that thin film sensor is set of claim 1, it is characterized in that conventional vacuum vapour deposition described in the step F, its vacuum tightness are 10 on alloy substrate
-310
-5Pa, and described employing high purity Al
2O
3Be evaporation raw material, raw material A l
2O
3Purity be not less than 99.99wt%.
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|---|---|---|---|
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|---|---|---|---|
| CN201110123372XA CN102212823B (en) | 2011-05-13 | 2011-05-13 | Method for arranging film sensor on alloy substrate |
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| CN102212823B CN102212823B (en) | 2012-11-07 |
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| CN103266320A (en) * | 2013-05-30 | 2013-08-28 | 电子科技大学 | High temperature oxidation resistant film sensor and production method thereof |
| CN103486961A (en) * | 2013-05-31 | 2014-01-01 | 电子科技大学 | Member with thin film sensor and manufacturing method of member |
| CN103921500A (en) * | 2014-04-30 | 2014-07-16 | 电子科技大学 | Thin film strainometer and preparation method thereof |
| CN104149416A (en) * | 2014-08-22 | 2014-11-19 | 电子科技大学 | Metal-based high-temperature insulation layer and preparation method thereof |
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| CN105908142A (en) * | 2016-04-15 | 2016-08-31 | 大连交通大学 | High-temperature thin film strain gauge and manufacturing method thereof |
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| CN106595910A (en) * | 2016-11-08 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Stress sensor and preparation method thereof |
| CN112853295A (en) * | 2021-01-07 | 2021-05-28 | 中北大学 | Preparation method for constructing gradient transition structure of thin film sensor by oxygen ion implantation |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894904A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | Metal-base film thermocouple and preparation method thereof |
-
2011
- 2011-05-13 CN CN201110123372XA patent/CN102212823B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894904A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | Metal-base film thermocouple and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| > 20040930 张以忱,巴德纯,马胜歌 薄膜热阻微传感器技术 24-28 1-4 第41卷, 第5期 * |
| 张以忱,巴德纯,马胜歌: "薄膜热阻微传感器技术", <<真空>> * |
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| CN103266320B (en) * | 2013-05-30 | 2016-01-20 | 电子科技大学 | A kind of High temperature oxidation resistant film sensor and production method thereof |
| CN103486961A (en) * | 2013-05-31 | 2014-01-01 | 电子科技大学 | Member with thin film sensor and manufacturing method of member |
| CN103921500B (en) * | 2014-04-30 | 2016-01-13 | 电子科技大学 | A kind of thin film strain takes into account its preparation method |
| CN103921500A (en) * | 2014-04-30 | 2014-07-16 | 电子科技大学 | Thin film strainometer and preparation method thereof |
| CN104149416A (en) * | 2014-08-22 | 2014-11-19 | 电子科技大学 | Metal-based high-temperature insulation layer and preparation method thereof |
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| CN104789926A (en) * | 2015-03-10 | 2015-07-22 | 电子科技大学 | Preparation method of metal based film sensor |
| CN105908142A (en) * | 2016-04-15 | 2016-08-31 | 大连交通大学 | High-temperature thin film strain gauge and manufacturing method thereof |
| CN105908142B (en) * | 2016-04-15 | 2018-08-14 | 大连交通大学 | A kind of high temperature film strain gauge and preparation method thereof |
| CN106498355A (en) * | 2016-10-20 | 2017-03-15 | 电子科技大学 | A kind of high temperature film sensor antioxidation composite armor and its manufacture method |
| CN106498355B (en) * | 2016-10-20 | 2018-08-21 | 电子科技大学 | A kind of high temperature film sensor anti-oxidant composite armor and its manufacturing method |
| CN106595910A (en) * | 2016-11-08 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Stress sensor and preparation method thereof |
| CN112853295A (en) * | 2021-01-07 | 2021-05-28 | 中北大学 | Preparation method for constructing gradient transition structure of thin film sensor by oxygen ion implantation |
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|---|---|
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