JP2008243990A - Substrate heating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate heating device for measuring the temperature of a ceramic base at the time of high temperature heating such as the formation of an oxide film and plasma etching in a plurality of heating regions corresponding to a plurality of heat generators. <P>SOLUTION: A substrate heating device comprises a plate ceramic base 11 having a substrate mounting surface 11a, a hollow support member 20 joined to a surface 11b opposite to a substrate mounting surface 11a of the ceramic base 11, and temperature measuring resistor bodies 16A and 16B comprising a high melting point material embedded in the ceramic base 11. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate heating apparatus, and more particularly to a substrate heating apparatus for heating a wafer or other plate-shaped material to be heated used as a substrate in a semiconductor device manufacturing process.

  In a semiconductor device manufacturing process, heat treatment is performed to form an oxide film or the like on a wafer using a semiconductor manufacturing apparatus. In this semiconductor manufacturing apparatus, a heating apparatus for heating a wafer includes a disk-shaped ceramic substrate having a substrate mounting surface on which the wafer is mounted, and a substrate heating device in which a heating element is provided on the ceramic substrate. is there. This substrate heating apparatus is advantageously applied not only to a film forming process in a semiconductor manufacturing process but also to a surface treatment process for dry etching the surface of a wafer in a plasma atmosphere or the like.

  In the wafer deposition process and surface treatment process, the wafer heating temperature and the temperature uniformity within the wafer surface affect the properties of the deposited film and the properties of the etched wafer surface. Affects device characteristics and yield. Therefore, it is required to control the heating of the substrate heating apparatus so as to uniformly heat the wafer at a predetermined temperature during the wafer film forming process or the surface treatment process.

There is a substrate heating apparatus in which a thermocouple for measuring a heating temperature is inserted in the central portion of a disk-shaped ceramic substrate for the purpose of uniformly heating a wafer at a predetermined temperature (Patent Documents 1 and 2). Further, there is a substrate heating apparatus in which a ceramic substrate is divided into a plurality of segments, and a heating element and a thermocouple are provided in each segment (Patent Document 3). Furthermore, there is a substrate heating device in which thermocouples are provided at the center, middle, and outer periphery of a ceramic substrate (Patent Document 4).
Japanese Patent Laid-Open No. 2002-158165, page 2, FIG. JP-A-2005-32933, page 8, FIG. JP 2002-184557 A JP 2004-115904 A

  In the substrate heating apparatus in which the thermocouple for measuring the heating temperature is inserted in the central part of the disk-shaped ceramic substrate as described in Patent Document 1 and Patent Document 2, the heating temperature is measured only in the central part of the ceramic substrate. Can not do it. For this reason, the temperature in the region other than the central portion such as the outer peripheral portion of the ceramic substrate must be grasped by estimating from the input power to the heating element or by measuring the radiant heat from the ceramic substrate or wafer. Measurement was difficult.

  In the substrate heating apparatus described in Patent Document 3 in which a thermocouple is provided in each segment of the ceramic substrate divided into a plurality of segments, temperature measurement for each segment is possible. However, a substrate heating apparatus in which a ceramic substrate is divided into a plurality of segments can be applied for heating at a relatively low temperature such as a drying process performed after application of a resist material. It is difficult to apply for heating in a high temperature or corrosive atmosphere such as plasma etching.

  As described in Patent Document 4, a substrate heating apparatus in which a thermocouple is provided in each of the center portion, the intermediate portion, and the outer peripheral portion of the ceramic substrate is used to measure the temperatures of the center portion, the intermediate portion, and the outer peripheral portion of the ceramic substrate. Is possible. However, temperature measurement with a thermocouple measures the temperature in a very limited point-like area near the thermocouple contact, and measures the average temperature over the entire heating area corresponding to the resistance heating element. It wasn't. Therefore, measurement using a thermocouple may not always be appropriate as measurement of temperature in a plurality of heating regions corresponding to a plurality of resistance heating elements.

  The present invention advantageously solves the above problem, and measures the temperature of the ceramic substrate during high-temperature heating such as formation of an oxide film or plasma etching, and a plurality of heating regions corresponding to a plurality of heating elements. An object of the present invention is to provide a substrate heating apparatus that can be used in the above process.

  The substrate heating apparatus of the present invention that solves the above problems includes a plate-like ceramic base having a substrate placement surface, and a hollow support member joined to a surface of the ceramic base opposite to the substrate placement surface. And a resistance temperature detector made of a high melting point material embedded in the ceramic substrate.

  According to the substrate heating apparatus of the present invention, the temperature of the ceramic substrate can be measured in a plurality of heating regions corresponding to a plurality of heating elements even when heating at a high temperature, and thus temperature measurement with high reliability is possible. It becomes.

  Hereinafter, embodiments of the substrate heating apparatus of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic longitudinal sectional view of an embodiment of a substrate heating apparatus according to the present invention. The substrate heating apparatus 1 shown in the figure includes a disk-shaped ceramic substrate 11. One plane of the ceramic substrate 11 is a substrate placement surface 11a on which a wafer W as a substrate is placed and heated. In order to heat the wafer W, in the present embodiment shown in FIG. 1, the resistance heating element 12 </ b> A is provided at the outer periphery of the wafer W and the resistance heating element 12 </ b> B is provided at the center of the wafer W in the ceramic substrate 11. Are buried. With the resistance heating element 12A and the resistance heating element 12B, the heating of the wafer W can be individually controlled in two regions of the outer peripheral portion and the central portion. However, the substrate heating apparatus of the present invention is not limited to a type that individually controls heating in two regions.

  The resistance heating element 12 </ b> A is connected to a lead wire 13 embedded in the ceramic base 11 so as to extend to the central portion in the diameter direction of the ceramic base 11. The lead wire 13 is connected to the terminal 14 in the vicinity of the central portion in the diameter direction of the ceramic substrate 11. This terminal 14 is connected to a power feed rod 15A inserted into a hole formed from a surface (ie, back surface) 11b opposite to the substrate mounting surface 11a of the ceramic substrate 11 toward the substrate mounting surface 11a. It is attached. The resistance heating element 12B is also connected to the terminal 14 via the lead wire 13 in the same manner as the resistance heating element 12A. This terminal 14 is brazed to a power feed rod 15B inserted into a hole formed from the back surface 11b of the ceramic substrate 11 toward the substrate mounting surface 11a. The power supply rod 15A and the power supply rod 15B can be made of, for example, nickel. The power supply rod 15A and the power supply rod 15B are individually supplied with electric power from a power source (not shown), thereby causing the resistance heating element 12A. Then, the resistance heating element 12B generates heat, thereby heating the wafer W placed on the substrate placement surface 11a of the ceramic substrate 11.

  A hollow support member 20 that supports the ceramic substrate 11 is fixed to the center of the back surface 11 b of the ceramic substrate 11. The support member 20 is made of ceramics of the same material as the ceramic base 11, for example. The power feeding rod 15 </ b> A and the power feeding rod 15 </ b> B are inserted into holes provided in the ceramic base 11 through the hollow portion of the support member 20. When the substrate heating apparatus 1 of the present invention is attached to a semiconductor manufacturing apparatus, the support member 20 shields the inside of the hollow portion of the support member 20 and the vicinity of the substrate placement surface 11a. Therefore, the power feeding rod 15A and the power feeding rod 15B provided in the hollow portion of the support member 20 are prevented from being corroded by the atmosphere during wafer heating.

  In the substrate heating apparatus of the present embodiment, the temperature measuring resistor 16A is embedded in the ceramic base 11 in the vicinity of the resistance heating element 12A, and the resistance to the resistance heating element 12B. The body 16B is embedded. This resistance temperature detector 16A is connected to a terminal 18 near the central portion in the diameter direction of the ceramic substrate 11 through a lead wire 17. The terminal 18 is brazed with a lead wire 19A inserted in a hole formed from the back surface 11b of the ceramic substrate 11 toward the substrate mounting surface 11a. Similarly to the resistance temperature detector 16A, the resistance temperature detector 16B is connected to a terminal 18 in the vicinity of the central portion in the diameter direction of the ceramic substrate 11 through the lead wire 17. The terminal 18 is brazed with a lead wire 19B inserted in a hole formed from the back surface 11b of the ceramic substrate 11 toward the substrate mounting surface 11a. These lead wire 19 </ b> A and lead wire 19 </ b> B are provided so as to pass through the hollow portion of the support member 20. Thus, the lead wire 19A and the lead wire 19B are shielded from the atmosphere in the vicinity of the wafer W during heating, and are prevented from being corroded by the atmosphere in the vicinity of the wafer W.

  Both the resistance temperature detector 16A and the resistance temperature detector 16B are made of a high melting point material such as Mo, and the resistances of the resistance temperature detector 16A and the resistance temperature detector 16B are respectively connected to the lead wire 19A and the lead wire 19B. Measurement is performed by a connected resistance measuring device (not shown). According to the knowledge of the inventors, the high-melting-point material such as Mo changes linearly with respect to the temperature change in the temperature range of the ceramic substrate when the wafer is heated. Moreover, the absolute value of this electric resistance is large, and the temperature coefficient indicating the degree of resistance change with respect to temperature change is also large. Therefore, it is possible to accurately measure the temperature at the 1 ° C. level, which is sufficient accuracy for measuring the temperature of the substrate heating apparatus.

  Therefore, the substrate heating apparatus 1 of the present embodiment can measure the temperature of the ceramic substrate 11 by embedding a resistance temperature detector made of a high melting point material in the ceramic substrate. In particular, it is difficult to measure with a substrate heating device in which a thermocouple is provided at the center of the ceramic substrate. By providing the resistance thermometer 16B on the outer periphery of the ceramic substrate 11, the outer periphery of the ceramic substrate 11 is provided. The temperature of the part can be accurately measured. Since the resistance temperature detector can be provided in any position in the ceramic substrate 11, the temperature at any position can be accurately measured.

  Further, in the substrate heating apparatus 1 of the present embodiment, a resistance temperature detector 16A and a resistance temperature detector 16B made of a high melting point material are provided in the vicinity of the resistance heating element 12A and the resistance heating element 12B, respectively. Accordingly, the temperature can be measured for each heating region in which heating is individually controlled by the resistance heating element 12A and the resistance heating element 12B. The heating area is not limited to the two zones of the outer peripheral portion and the central portion as shown in FIG. 1, and may be a multi-zone in which a plurality of resistance heating elements are provided when viewed from the substrate mounting surface. And by providing a resistance temperature detector according to the plurality of resistance heating elements provided in the multi-zone, it is possible to measure the temperature of each region of the multi-zone.

  Further, the resistance temperature detector 16A and the resistance temperature detector 16B measure a temperature change in a region where the resistance temperature detector is provided as a resistance change. Therefore, the resistance temperature detector 16A and the resistance temperature detector 16B can measure the average temperature of the specific region of the ceramic substrate 11. The resistance temperature detector 16A and the resistance temperature detector 16B can measure the average temperature in a specific region when measuring temperature according to a plurality of resistance heating elements provided in multiple zones, like a thermocouple. It is possible to measure the temperature of the heating region with higher accuracy than measurement means for measuring the ceramic substrate 11 pinpoint.

  Furthermore, since the heating device 1 of the present embodiment can measure the temperature for each heating region of the ceramic substrate 11 by the resistance temperature detector 16A and the resistance temperature detector 16B, the temperature measurement result for each heating region is obtained. Based on this, the electric power supplied to the resistance heating element 12A and the resistance heating element 12B is individually adjusted, so that the wafer W placed on the substrate placement surface 11a of the ceramic base 11 can be heated uniformly. it can. For example, temperature data measured by a resistance measurement device connected to the resistance temperature detector 16A and the resistance temperature detector 16B is input to a temperature control device (not shown), and in the temperature control device, the resistance temperature detectors 16A. Is calculated, and based on this temperature difference, the power supplied from the power source connected to the resistance heating element 12A and the power source connected to the resistance heating element 12B are calculated. It is possible to uniformly heat the wafer W by performing control for adjusting the ratio with the power supplied from the above, that is, the heating ratio.

  Moreover, since the temperature measuring resistor 16A and the temperature measuring resistor 16B can simultaneously measure the temperature for each heating region of the ceramic substrate 11, the heating device 1 of the present embodiment causes damage due to the thermal stress of the heater. It is also possible to prevent the occurrence of abnormal temperature distribution.

  The structure of the substrate heating apparatus of the present embodiment in which the resistance temperature detector 16A and the resistance temperature detector 16B are embedded is particularly the substrate heating apparatus 1 in which the hollow support member 20 is bonded to the back surface 11b of the ceramic substrate 11. It is advantageously applied to. According to the present embodiment, when measuring the temperature of a region other than the central portion in the diameter direction of the ceramic substrate 11, for example, the outer peripheral portion, the resistance temperature detector 16 </ b> A and the resistance temperature detector 16 </ b> B are placed in the ceramic substrate 11. This is because the lead wire 19A and the lead wire 19B provided in the hollow portion of the support member 20 can be connected via the embedded lead wire 13. The lead wire 19A and the lead wire 19B are shielded from the atmosphere near the wafer W by the support member 20, and are prevented from being corroded by the atmosphere near the wafer W.

  On the other hand, in a substrate heating apparatus having a structure having a thermocouple inserted into a hole drilled from the back surface 11b of the ceramic substrate 11 toward the substrate mounting surface 11a, the temperature of the central portion of the ceramic substrate 11 is The measurement can be performed by providing a thermocouple in the hollow portion of the support member 20. However, if an attempt is made to measure the temperature of the outer peripheral portion other than the central portion, for example, a thermocouple is inserted into the outer peripheral portion of the ceramic substrate 11 from the back surface 11b. The outer peripheral thermocouple is not guided to the hollow portion of the support member 20 and may be corroded by the atmosphere in the vicinity of the wafer W. Therefore, conventionally, with respect to a substrate heating apparatus having a thermocouple, an apparatus capable of measuring the temperature of the outer peripheral portion of the ceramic substrate 11 without corrosion of the thermocouple has not been realized.

  The diameter of the support member 20 is limited, and the diameter of the support member 20 cannot be increased so that the thermocouple provided on the outer peripheral portion of the ceramic substrate is accommodated in the hollow portion as it is. The reason is described as follows. In order to firmly and firmly fix the support member 20 to the ceramic base 11, that is, to prevent separation due to a crack in the joint portion between the ceramic base 11 and the support member 20, the thermal expansion is the same as the ceramic base 11. It is preferable to be made of ceramics having the same coefficient. When the support member 20 is made of a ceramic having the same kind as that of the ceramic substrate 11 and having the same thermal expansion coefficient, the diameter of the support member 20 is limited by the thermal stress acting on the support member 20. When the ceramic substrate 11 is heated by the resistance heating element 12A, the resistance heating element 12B, or other heating means, the end of the support member 20 on the side in contact with the ceramic substrate 11 becomes hot, and what is the side in contact with the ceramic substrate 11? A temperature difference is generated between the opposite ends. This temperature difference acts as a thermal stress in the tensile direction at the joint between the ceramic substrate 11 and the support member 20. The magnitude of this thermal stress is related to the diameter of the support member 20, and the greater the diameter of the support member 20, the greater the thermal stress. Therefore, in order to suppress the thermal stress acting on the joint portion between the ceramic base 11 and the support member 20 within a range where the joint portion does not break, the diameter of the support member 20 is set within a certain range. Need to be restricted.

  In the substrate heating apparatus having the support member 20 with the diameter limited as described above, the resistance temperature detector 16A and the resistance temperature detector 16B are embedded in an arbitrary position of the ceramic substrate 11 and supported via the lead wire 13. The substrate heating apparatus 1 of this embodiment that can be connected to the lead wire 19A and the lead wire 19B provided in the hollow portion of the member 20 is advantageously adapted.

  The ceramic substrate 11 is preferably made of aluminum nitride, silicon nitride, silicon carbide, or alumina having high thermal conductivity. Among these, aluminum nitride having a high insulating property and a high thermal conductivity is particularly preferable.

Resistance temperature detector 16A and resistance temperature detector 16B are high melting point materials having low volume resistivity, such as conductive ceramics such as TiN, TaN, C, Mo, W, Nb, and oxides and carbides of these metals. Nitride is preferred. It is important that the thermal expansion coefficient is close to that of the ceramic substrate. Therefore, it is preferable to consist of at least one material selected from Mo, W and a compound of these metals. Mo, W, and MoC, MoO ₂ , WC, etc. as a compound of these metals are materials whose thermal expansion coefficient is close to that of aluminum nitride, and the electric resistance value changes linearly with temperature. Since the value is large and the temperature coefficient indicating the degree of resistance change with respect to temperature change is also large, it can be suitably applied as a temperature measuring resistor of the substrate heating apparatus of the present invention.

  It is preferable that the resistance temperature detector 16A and the resistance temperature detector 16B have a shape in which a linear high melting point material is bent. Since the resistance thermometer 16A and the resistance thermometer 16B have a shape in which a linear high melting point material is bent, the resistance value of the resistance thermometer is higher than that of a linear resistor. The absolute value can be increased. Thereby, temperature measurement can be performed with higher accuracy. In addition, the absolute value of the resistance value as the resistance temperature detector can be increased because the lead wire 17 connected to the resistance temperature detector 16A or the resistance temperature detector 16B is connected to the resistance temperature detector 16A or the resistance temperature detector. When the resistance temperature detector 16A and the lead wire 17 are integrally manufactured as a high melting point material of the same type as 16B, the resistance value of the lead wire 17 can be made relatively small and measured. It is also advantageous in that the influence of the resistance value of the lead wire 17 on the resistance value can be reduced.

  The shape in which the linear high melting point material is bent may be any one of two-dimensionally bent shape and three-dimensionally bent shape. For example, a coil shape, a bellows shape, a ribbon It can be a shape or the like. Resistance thermometers having these shapes can be manufactured by bending a wire of a high melting point material, and a paste-like raw material containing a powder of a high melting point material is printed in the course of manufacturing a ceramic substrate. It can also be manufactured by selectively forming by printing.

  The lead wire 19A and the resistance temperature detector 19B that are connected to the lead wire 17 connected to the resistance temperature detector 16A and the resistance temperature detector 16B by brazing and are provided in the hollow portion of the hollow support member 20 are, for example, nickel. Can be made.

  In order to manufacture the ceramic base 11 in which the resistance thermometer 16A and the resistance thermometer 16B are embedded, for example, the ceramic base 11 is manufactured by an integral sintered body of a portion divided in the thickness direction. This part is prepared by dividing into a part on the substrate mounting surface side and a part on the back surface side than the resistance temperature detector 16A and the resistance temperature detector 16B, and a part on the substrate mounting surface side and a part on the back surface side are prepared. There is a method of integrally sintering these portions after forming the resistance temperature detector 16A and the resistance temperature detector 16B.

  Next, another embodiment of the substrate heating apparatus according to the present invention will be described with reference to FIGS. FIG. 2 is a schematic longitudinal sectional view of another embodiment of the substrate heating apparatus according to the present invention, FIG. 3 is a diagram showing a cut surface along line AA in FIG. 2, and FIG. It is a figure which shows the cut surface by -B line | wire. 2 to 4, members similar to those of the substrate heating apparatus 1 illustrated in FIG. Therefore, the description which overlaps with the description already performed using FIG. 1 is abbreviate | omitted.

  The substrate heating apparatus 2 of the present embodiment shown in FIGS. 2 to 4 has the same basic configuration as the substrate heating apparatus 1 shown in FIG. In the ceramic substrate 11, four resistance heating elements, that is, a resistance heating element 12C, a resistance heating element 12D, a resistance heating element 12E, and a resistance heating element 12F are embedded. The region in which the resistance heating element 12C, the resistance heating element 12D, the resistance heating element 12E, and the resistance heating element 12F are embedded is shown in the cut surface of the region in which the resistance heating element is embedded in FIG. The resistance heating element 12 </ b> C is provided by being wound around the central portion of the ceramic substrate 11. The resistance heating element 12 </ b> D is provided by being wound substantially concentrically at the radial direction intermediate portion of the ceramic substrate 11. The resistance heating element 12E is provided by being wound around the outer periphery in the region of the outer periphery of one semicircle in which the disk planar shape of the ceramic substrate 11 is divided by a line segment passing through the center. The resistance heating element 12F is provided by being wound around the outer periphery of the other semicircle obtained by dividing the disk plane shape of the ceramic substrate 11 by a line segment passing through the center. The substrate heating apparatus 2 according to the present embodiment includes the resistance heating element 12C, the resistance heating element 12D, the resistance heating element 12E, and the resistance heating element 12F. It is possible to individually control heating of the other half of the section.

  In order to correspond to each of these resistance heating elements, the thermocouple 21 and the temperature measurement are arranged closer to the back surface 11b side than the resistance heating element 12C, the resistance heating element 12D, the resistance heating element 12E, and the resistance heating element 12F in the ceramic substrate 11. A resistor 16D, a resistance temperature detector 16E, and a resistance temperature detector 16F are embedded. The region where these thermocouples 21, the resistance temperature detectors 16D, the resistance temperature detectors 16E, and the resistance temperature detectors 16F are embedded is the cut surface of the region where the resistance temperature detectors of FIG. 4 are embedded. Indicated. The thermocouple 21 is provided corresponding to the resistance heating element 12 </ b> C, and a contact point is inserted into the central portion of the ceramic base 11 from the back surface 11 b. The resistance temperature detector 16D corresponds to the resistance heating element 12D, and is provided with a coiled high-melting-point material wound approximately concentrically around the radial intermediate portion of the ceramic substrate 11. The resistance temperature detector 16E corresponds to the resistance heating element 12E, and an outer periphery of one semicircle in which a coiled high melting point material is divided into two by a line segment passing through the center of the disk planar shape of the ceramic substrate 11. It is provided by being wound around the outer periphery in the region of the part. The resistance temperature detector 16F corresponds to the resistance heating element 12F, and the outer circumference of the other semicircle in which the coiled high melting point material is divided into two by the line segment passing through the center of the disk plane shape of the ceramic substrate 11. It is provided by being wound around the outer periphery in the region of the part.

  The substrate heating apparatus 2 of the present embodiment corresponds to the resistance heating element 12C, the resistance heating element 12D, the resistance heating element 12E, and the resistance heating element 12F, corresponding to the thermocouple 21, the resistance temperature detector 16D, and the resistance temperature detector 16E. Since the resistance thermometer 16F is embedded, it is possible to measure the temperature of each region heated by these resistance heating elements. Moreover, it is needless to say that the same effects as those of the substrate heating apparatus 1 shown in FIG.

  In the present embodiment shown in FIG. 2, a thermocouple 21 is provided for measuring the temperature of the central portion of the ceramic substrate 11, but instead of this thermocouple 21, it is made of a high melting point material such as Mo. A structure in which the resistance temperature detector is embedded in the central portion of the ceramic substrate 11 may be employed.

[Example 1]
A substrate heating apparatus having the structure shown in FIG. 2 was produced. The resistance heating element has three zones including a central region 12c, an outer peripheral region 12e, and an intermediate region 13d. A temperature measuring resistor is embedded in the vicinity of the resistance heating element so as to correspond to these resistance heating elements. This resistance temperature detector was made of Mo and made of a coil.

  When the resistance heating element of the produced substrate heating apparatus was supplied with electric power to generate heat, and the electric resistance of the resistance temperature detector was measured, it was 38Ω at room temperature, and the absolute value of the resistance was large. Further, as a result of examining the temperature change of the resistance up to 700 ° C., the resistance value at 700 ° C. was 120Ω, the resistance value changed almost linearly with respect to the temperature, and the temperature coefficient was large. Therefore, the temperature in the vicinity of the resistance heating element is obtained from the electric resistance value of these resistance heating elements, and the obtained temperature is compared with the temperature measured by an infrared two-dimensional temperature measuring camera as another temperature measurement device. It was confirmed that the temperature could be measured accurately at the 1 ° C. level.

  As mentioned above, although the Example of the substrate heating apparatus which concerns on this invention was described using drawing, the substrate heating apparatus which concerns on this invention is not limited to the illustrated Example, Many are within the meaning of this invention. Deformation is possible. For example, in the illustrated embodiment of the substrate heating apparatus, an example in which a resistance heating element for heating the ceramic substrate is embedded in the ceramic substrate is shown. However, the heating means for heating the ceramic substrate is ceramics. It may be attached to the back surface of the substrate. Moreover, even if a dielectric electrode for generating an electrostatic force on the substrate mounting surface of the ceramic substrate and a high-frequency electrode for making the substrate mounting surface into a plasma atmosphere are embedded in the ceramic substrate. Good.

  Furthermore, when the resistance heating element is a refractory metal body made of Mo or W, the resistance heating element itself has the same material as that of the resistance temperature detector, so that the resistance heating element also serves as the resistance temperature detector of the present invention. Can do. In other words, by measuring the resistance of the resistance heating element with a resistance measuring device or the like, the temperature of the heating region provided with the resistance heating element can be measured. In this case, the resistance heating element that also serves as the temperature measuring resistor Apart from this, it is possible to adopt a configuration in which the provision of a resistance temperature detector is omitted.

It is a typical longitudinal section of one example of a substrate heating device concerning the present invention. It is a typical longitudinal section of another example of a substrate heating device concerning the present invention. It is sectional drawing of the cut surface by the AA line of FIG. It is sectional drawing of the cut surface by the BB line of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate heating apparatus 2 Substrate heating apparatus 11 Ceramic substrate 12A, 12B, 12C, 12D, 12E, 12F Resistance heating element 16A, 16B, 16D, 16E, 16F Resistance temperature detector 20 Support member

Claims (4)

A plate-like ceramic substrate having a substrate mounting surface;
A hollow support member joined to a surface opposite to the substrate mounting surface of the ceramic substrate;
A substrate heating apparatus comprising: a resistance temperature detector made of a high melting point material embedded in the ceramic substrate.   2. The substrate heating apparatus according to claim 1, wherein a plurality of the resistance temperature detectors are embedded in the ceramic substrate as viewed from the substrate mounting surface.   3. The substrate heating apparatus according to claim 1, wherein the resistance temperature detector is made of at least one material selected from Mo, W and a compound of these metals.   The substrate heating apparatus according to claim 1, wherein the resistance temperature detector has a shape in which a linear high melting point material is bent.

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