CN106226361A - A kind of board-like gas detecting element of novel slight fever - Google Patents

A kind of board-like gas detecting element of novel slight fever Download PDF

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Publication number
CN106226361A
CN106226361A CN201610794841.3A CN201610794841A CN106226361A CN 106226361 A CN106226361 A CN 106226361A CN 201610794841 A CN201610794841 A CN 201610794841A CN 106226361 A CN106226361 A CN 106226361A
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China
Prior art keywords
gas
passivation layer
sensitive membrane
board
insulating passivation
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CN201610794841.3A
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Chinese (zh)
Inventor
王成杨
金建东
吴亚林
李玉玲
丁文波
王明伟
齐虹
刘智辉
宋尔东
赵瑞堃
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CETC 49 Research Institute
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CETC 49 Research Institute
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128Microapparatus
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer

Abstract

A kind of board-like gas detecting element of novel slight fever, relates to gas sensor in order to solve the board-like gas sensor of existing slight fever to there is the problem that sensitive material easily comes off and device overall dimensions is bigger.Above-mentioned gas sensing element is followed successively by from bottom to top: substrate, the first insulating passivation layer and the second insulating passivation layer that silicon nitride layer, silicon dioxide layer, silicon chip and silicon dioxide layer are constituted.Penetrating hollow silicon cup is had in substrate, first insulating passivation layer is embedded with sensitive membrane extraction electrode, this electrode is positioned at the bottom surface of hollow silicon cup, its lower surface is coated with gas sensitization film, add thermal resistance and temperature detecting resistance is embedded in the second insulating passivation layer, the upper surface of this passivation layer is provided with and adds electric resistance welding dish, temperature detecting resistance pad and sensitive membrane extraction electrode pad, and each pad upper surface is provided with chip bump.Hollow silicon cup makes gas sensitization film difficult drop-off, and need not additionally install protective cover, reduces overall dimensions.

Description

A kind of board-like gas detecting element of novel slight fever
Technical field
The present invention relates to gas sensor.
Background technology
Conductor oxidate gas sensor is able at each due to its simple in construction, easy to make, low cost and other advantages Field is extensively applied.But this kind of sensor need at high temperature work, the traditional approach heater-type gas based on earthenware Sensor bulk is relatively big, has bigger power consumption (about 1W), and concordance is poor.Along with microelectromechanical systems (MEMS) technique skill The fast development of art, makes that volume is little, low-power consumption, MEMS micro-hotplate gas sensor easy of integration, mass become numerous and grind The person's of studying carefully focus of attention.At present, the board-like gas sensor of slight fever remains some problems, such as the quasiconductor with silicon as substrate Device is poor with the adhesive force of gas sensitive, and gas sensitive is susceptible to obscission;Conventional wire bond package causes mutually Connection length increases, and this kind of packaged type causes gas sensor thickness to increase, and is unfavorable for playing the board-like gas sensor of slight fever The advantage of small size;Further, since the micro-hotplate structure suspended is easier to be destroyed by external force, need to install individually on sensing element Protective cover, and at upper surface, small network structure is set to ensure its contacting with gas to be measured, this kind of structure makes top Highly it is significantly increased, substantially increases the overall dimensions of gas sensor.In order to reduce the overall dimensions of gas sensor, grind The person of studying carefully gives some solutions in terms of encapsulation, as patent of invention CN104515793A discloses a kind of gas sensor envelope Piece installing, is installed gas-sensing element by flip-chiop bonding method and constructs the gas sensing with frivolous structure to substrate Device, but it need to be especially tailored gas injection port to complete contacting of sensing element and gas on substrate, and manufacture method is more Complicated.Patent of invention CN105158299A and patent of invention CN105277594A individually disclose a kind of for manufacturing gas sensing The method of device encapsulation and gas sensor packaging part, by applying molding compounds to close semiconductor chip at least in part, Thus in molding compounds, form opening, and at opening portion applying sensitive material to ensure the connection of itself and gas to be measured, should The method of kind needs the assembling between air-sensitive chip and carrier and molding compounds, is reducing gas sensor terms of overall dimensions advantage Not quite, and its sensitive material need to complete to encapsulate after-applied, there is certain limitation in actual applications.
Summary of the invention
The invention aims to solve the board-like gas sensor of existing slight fever exist sensitive material easily come off with And the problem that device overall dimensions is bigger, it is provided that a kind of board-like gas detecting element of novel slight fever.
The board-like gas detecting element of the novel slight fever of one of the present invention, is followed successively by from bottom to top: silicon nitride layer 3, two Silicon oxide layer 2, silicon chip 1, silicon dioxide layer the 2, first insulating passivation layer 5 and the second insulating passivation layer 8;
The silicon dioxide layer 2 of silicon nitride layer 3, silicon chip 1 and its both sides constitutes the substrate of described gas detecting element, described Having penetrating hollow silicon cup 17 in substrate, the first insulating passivation layer 5 is internal is embedded with sensitive membrane extraction electrode 4, described sensitive membrane Extraction electrode 4 is positioned at the bottom surface of hollow silicon cup 17, and the lower surface of sensitive membrane extraction electrode 4 is coated with gas sensitization film 14, heating Resistance 6 and temperature detecting resistance 7 are embedded in the second insulating passivation layer 8, and the bottom surface adding thermal resistance 6 and temperature detecting resistance 7 is respectively positioned on The upper surface of one insulating passivation layer 5, the upper surface of the second insulating passivation layer 8 is provided with and adds electric resistance welding dish 10, temperature detecting resistance weldering Dish 11 and sensitive membrane extraction electrode pad 12, add electric resistance welding dish 10 and add thermal resistance and 6 be electrically connected, temperature detecting resistance pad 11 with Temperature detecting resistance 7 is electrically connected, and sensitive membrane extraction electrode pad 12 is electrically connected with sensitive membrane extraction electrode 4, temperature detecting resistance pad 11, the upper surface adding electric resistance welding dish 10 and sensitive membrane extraction electrode pad 12 is provided with chip bump 13.
According to the preferred embodiment of the present invention, the upper surface of the second insulating passivation layer 8 is corresponding with gas sensitization film 14 Position be carved with groove 9.
According to the preferred embodiment of the present invention, silicon chip 1 uses N-type (100) double throwing silicon chip.
According to the preferred embodiment of the present invention, gas sensitization film 14 uses the method for spraying or drop coating to be fixed on sensitive membrane On extraction electrode 4.
According to the preferred embodiment of the present invention, gas sensitization membrane material is SnO2、WO3、ZnO、In2O3、ZnFe2O4With V2O5-SnO2In one or more.
According to the preferred embodiment of the present invention, between sensitive membrane extraction electrode 4 and the first insulating passivation layer 5, add thermoelectricity Between resistance 6 and the first insulating passivation layer 5 and the second insulating passivation layer 8 and temperature detecting resistance 7 and the first insulating passivation layer 5 and the All making between two insulating passivation layers 8 and have the transition zone for increasing adhesiveness, the material of described transition zone is Cr or Ti.
According to the preferred embodiment of the present invention, the thickness range of the second insulating passivation layer 8 is
According to the preferred embodiment of the present invention, the depth bounds of groove 9 is
According to the preferred embodiment of the present invention, add electric resistance welding dish 10, temperature detecting resistance pad 11 and sensitive membrane and draw electricity The material of pole pad 12 is the one in Pt, Au, Al and W.
According to the preferred embodiment of the present invention, add electric resistance welding dish 10, temperature detecting resistance pad 11 and sensitive membrane and draw electricity All make between pole pad 12 and the second insulating passivation layer 8 and have the transition zone for increasing adhesiveness, the material of described transition zone For Cr or Ti.
The board-like gas detecting element of the novel slight fever of one of the present invention has the advantage that
1, gas sensitization film 14 can be played a protective role by hollow silicon cup 17 so that gas sensitization film 14 difficult drop-off, Improve reliability and the stability of gas detecting element, and need not the guarantor for protective gas sensitive membrane 14 is additionally installed Guard shield, greatly reduces the overall dimensions of gas detecting element;
2, without being especially tailored gas injection port on substrate, and ensure that gas sensitization film 14 and gas to be measured It is fully contacted.
Accompanying drawing explanation
Fig. 1 is the profile of the board-like gas detecting element of a kind of novel slight fever described in embodiment one;
Fig. 2 is to add thermal resistance 6, add electric resistance welding dish 10, temperature detecting resistance 7 and the structural representation of temperature detecting resistance pad 11;
Fig. 3 is sensitive membrane extraction electrode 4 and the structural representation of sensitive membrane extraction electrode pad 12;
Fig. 4 is the structure schematic diagram of the board-like gas detecting element of a kind of novel slight fever described in embodiment one;
Fig. 5 is the method for packing schematic diagram of a kind of novel slight fever board-like gas sensitization unit described in embodiment one;
Fig. 6 is the structural representation after a kind of novel slight fever board-like gas sensitization unit encapsulation described in embodiment one;
Fig. 7 is the Facad structure schematic diagram of the board-like gas detecting element of a kind of novel slight fever described in embodiment two.
Detailed description of the invention
Detailed description of the invention one: combine Fig. 1 to Fig. 4 and present embodiment is described, the one described in present embodiment is novel micro- Hot plate type gas detecting element is followed successively by from bottom to top: silicon nitride layer 3, silicon dioxide layer 2, silicon chip 1, silicon dioxide layer 2, first Insulating passivation layer 5 and the second insulating passivation layer 8;
The silicon dioxide layer 2 of silicon nitride layer 3, silicon chip 1 and its both sides constitutes the substrate of described gas detecting element, described Having penetrating hollow silicon cup 17 in substrate, the first insulating passivation layer 5 is internal is embedded with sensitive membrane extraction electrode 4, described sensitive membrane Extraction electrode 4 is positioned at the bottom surface of hollow silicon cup 17, and the lower surface of sensitive membrane extraction electrode 4 is coated with gas sensitization film 14, heating Resistance 6 and temperature detecting resistance 7 are embedded in the second insulating passivation layer 8, and the bottom surface adding thermal resistance 6 and temperature detecting resistance 7 is respectively positioned on The upper surface of one insulating passivation layer 5, the upper surface of the second insulating passivation layer 8 is provided with and adds electric resistance welding dish 10, temperature detecting resistance weldering Dish 11 and sensitive membrane extraction electrode pad 12, add electric resistance welding dish 10 and add thermal resistance and 6 be electrically connected, temperature detecting resistance pad 11 with Temperature detecting resistance 7 is electrically connected, and sensitive membrane extraction electrode pad 12 is electrically connected with sensitive membrane extraction electrode 4, temperature detecting resistance pad 11, the upper surface adding electric resistance welding dish 10 and sensitive membrane extraction electrode pad 12 is provided with chip bump 13.
Hollow silicon cup 17 is a suprabasil hole, and hollow silicon cup 17 runs through whole substrate, makees with the first insulating passivation layer 5 For its bottom surface.Hollow silicon cup 17 cross section in Fig. 4 is square.
The one board-like gas detecting element of novel slight fever described in present embodiment makes on N-type (100) monocrystalline silicon piece, MEMS technology is used it to be processed and obtains.Described gas detecting element is mainly by micro-hotplate and gas sensitive membrane 14 groups Become.As it is shown in figure 1, micro-hotplate comprises parts such as adding thermal resistance 6, temperature detecting resistance 7, sensitive membrane extraction electrode 4 and hollow silicon cup. Wherein, add thermal resistance 6 and be positioned at micro-hotplate upper strata, and be produced on same layer with temperature detecting resistance 7;Sensitive membrane extraction electrode 4 is produced on Add the lower floor of thermal resistance 6;Hollow silicon cup is positioned at the lower floor of sensitive membrane extraction electrode 4;Gas sensitization film 14 is positioned at hollow silicon cup Portion, is connected with sensitive membrane extraction electrode 4, and gas sensitive material uses the method for spraying or drop coating to be fixed on sensitive membrane and draws electricity On pole 4.Sensitive membrane extraction electrode 4 and add and use the first insulating passivation layer 5 as insulating barrier between thermal resistance 6, adds on thermal resistance 6 Side's making the second insulating passivation layer 8 is as protective layer, and hollow silicon cup is to use dry etching and wet-etching technology to hand over from the back side For processing, formed rear for back side silicon nitride silicon layer, back side silicon dioxide layer, silicon layer and front silicon dioxide layer etching successively, Now can expose sensitive membrane extraction electrode 4 from the back side, make gas sensitization film 14 on the surface of sensitive membrane extraction electrode 4, make Gas sensitization film 14 contacts with sensitive membrane extraction electrode 4.Need before making gas sensitization film 14 to be inverted gas detecting element, then Gas sensitive material is fixed on the surface of sensitive membrane extraction electrode 4 within silicon cup.Gas sensitization film 14 is positioned at hollow silicon At the bottom of the cup of cup, gas sensitization film 14 can be played a protective role by hollow silicon cup 17.
The structure adding thermal resistance 6 and temperature detecting resistance 7 of above-mentioned gas sensing element is as in figure 2 it is shown, add thermal resistance 6 and thermometric Resistance 7 all uses serpentine configuration.Adding thermal resistance 6 two ends respectively to connect one and add electric resistance welding dish 10, temperature detecting resistance 7 two ends respectively connect One temperature detecting resistance pad 11.
The structure of sensitive membrane extraction electrode 4 is as it is shown on figure 3, sensitive membrane extraction electrode 4 comprises two independent parts, every portion Subpackage contains two contact conductors being connected, and junction point electrically connects with sensitive membrane extraction electrode pad 12.
As it is shown in figure 5, during encapsulation, above-mentioned gas sensing element is inverted on substrate 15, by chip bump 13 and substrate Binding post 16 on 15 welds together, and the structure after closing is as shown in Figure 6.
Employing flip-chip bonding process is packaged, and temperature detecting resistance pad 11, adds electric resistance welding dish 10 and sensitive membrane and draws electricity There is not the lead-in wires such as spun gold between pole pad 12 and binding post 16, shorten signal transmission distance, substantially increase signal transmission Speed.Additionally, this packaging technology also has the advantage reducing cost, improving production capacity.
In present embodiment, sensitive membrane extraction electrode 4, the material adding thermal resistance 6 and temperature detecting resistance 7 are Pt, can basis Making transition zone is to increase adhesiveness before making Pt for needs, and buffer layer material is the one in Cr or Ti.
Add the material of electric resistance welding dish 10, temperature detecting resistance pad 11 and sensitive membrane extraction electrode pad 12 can select Pt, One or more in Au, Al and W, can make transition zone before pad to increase adhesiveness making, its transition as required Layer material is the one in Cr or Ti.
The material of gas sensitization film 14 is SnO2、WO3、ZnO、In2O3、ZnFe2O4And V2O5-SnO2In one or more.
First insulating passivation layer 5 uses silicon nitride to make.
Second insulating passivation layer 8 uses silicon dioxide or silicon nitride to make, and its thickness range is
Substrate 15 is PCB substrate, ceramic substrate or flexible base board.
Detailed description of the invention two: combine Fig. 7 and illustrate that present embodiment, present embodiment are to described in embodiment one The further restriction of kind of the board-like gas detecting element of novel slight fever, in present embodiment, the upper surface of the second insulating passivation layer 8 with Groove 9 is carved with in the corresponding position of gas sensitization film 14.
As it is shown in fig. 7, groove 9 can be square, the depth bounds of groove 9 isIts area is more than The area of gas sensitization film 14.
Make square etching groove on second insulating passivation layer 8, etched certain depth and ensure during face-down bonding micro- Form gap between hot plate and substrate, to ensure heat radiation, reduce power consumption.

Claims (10)

1. the board-like gas detecting element of novel slight fever, it is characterised in that be followed successively by from bottom to top: silicon nitride layer (3), dioxy SiClx layer (2), silicon chip (1), silicon dioxide layer (2), the first insulating passivation layer (5) and the second insulating passivation layer (8);
The silicon dioxide layer (2) of silicon nitride layer (3), silicon chip (1) and its both sides constitutes the substrate of described gas detecting element, institute Stating and have penetrating hollow silicon cup (17) in substrate, the first insulating passivation layer (5) is internal is embedded with sensitive membrane extraction electrode (4), institute State sensitive membrane extraction electrode (4) and be positioned at the bottom surface of hollow silicon cup (17), and the lower surface of sensitive membrane extraction electrode (4) is coated with gas Sensitive membrane (14), adds thermal resistance (6) and temperature detecting resistance (7) is embedded in the second insulating passivation layer (8), and add thermal resistance (6) and The bottom surface of temperature detecting resistance (7) is respectively positioned on the upper surface of the first insulating passivation layer (5), and the upper surface of the second insulating passivation layer (8) sets It is equipped with and adds electric resistance welding dish (10), temperature detecting resistance pad (11) and sensitive membrane extraction electrode pad (12), add electric resistance welding dish (10) with add thermal resistance (6) electrical connection, temperature detecting resistance pad (11) and temperature detecting resistance (7) are electrically connected, and sensitive membrane draws electricity Pole pad (12) and sensitive membrane extraction electrode (4) are electrically connected, and temperature detecting resistance pad (11), add electric resistance welding dish (10) and sensitivity The upper surface of film extraction electrode pad (12) is provided with chip bump (13).
The board-like gas detecting element of the novel slight fever of one the most according to claim 1, it is characterised in that the second insulation passivation Groove (9) is carved with in the position that the upper surface of layer (8) is corresponding with gas sensitization film (14).
The board-like gas detecting element of the novel slight fever of one the most according to claim 1, it is characterised in that silicon chip (1) uses N Type is double throws silicon chip.
The board-like gas detecting element of the novel slight fever of one the most according to claim 1, it is characterised in that gas sensitization film (14) method of spraying or drop coating is used to be fixed on sensitive membrane extraction electrode (4).
The board-like gas detecting element of the novel slight fever of one the most according to claim 1, it is characterised in that gas sensitization film (14) material is SnO2、WO3、ZnO、In2O3、ZnFe2O4And V2O5-SnO2In one or more.
The board-like gas detecting element of the novel slight fever of one the most according to claim 1, it is characterised in that sensitive membrane draws electricity Between pole (4) and the first insulating passivation layer (5), add thermal resistance (6) and the first insulating passivation layer (5) and the second insulating passivation layer (8) all make between and between temperature detecting resistance (7) and the first insulating passivation layer (5) and the second insulating passivation layer (8) have for Increasing the transition zone of adhesiveness, the material of described transition zone is Cr or Ti.
The board-like gas detecting element of the novel slight fever of one the most according to claim 1, it is characterised in that the second insulation passivation The thickness range of layer (8) is
The board-like gas detecting element of the novel slight fever of one the most according to claim 2, it is characterised in that groove (9) deep Degree scope is
The board-like gas detecting element of the novel slight fever of one the most according to claim 1, it is characterised in that add electric resistance welding dish (10), the one that the material of temperature detecting resistance pad (11) and sensitive membrane extraction electrode pad (12) is in Pt, Au, Al and W.
The board-like gas detecting element of the novel slight fever of one the most according to claim 9, it is characterised in that add electric resistance welding All make between dish (10), temperature detecting resistance pad (11) and sensitive membrane extraction electrode pad (12) and the second insulating passivation layer (8) Having the transition zone for increasing adhesiveness, the material of described transition zone is Cr or Ti.
CN201610794841.3A 2016-08-31 2016-08-31 A kind of board-like gas detecting element of novel slight fever Pending CN106226361A (en)

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CN110651179A (en) * 2017-04-26 2020-01-03 内华达纳米技术系统公司 Gas sensor including micro-hotplate with resistive heater and related methods
CN107381495A (en) * 2017-08-14 2017-11-24 南方科技大学 A kind of MEMS micro-hotplates and its manufacture method
CN107381495B (en) * 2017-08-14 2023-11-14 南方科技大学 MEMS micro-hotplate and manufacturing method thereof
CN107827078A (en) * 2017-09-20 2018-03-23 上海申矽凌微电子科技有限公司 The manufacture method of sensor and the thus sensor of method manufacture
CN107703189A (en) * 2017-10-14 2018-02-16 郑州炜盛电子科技有限公司 The ceramic package of MEMS gas sensors and module
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