CN208753307U - A kind of Semiconductor Bridge Ignition device - Google Patents
A kind of Semiconductor Bridge Ignition device Download PDFInfo
- Publication number
- CN208753307U CN208753307U CN201821435046.6U CN201821435046U CN208753307U CN 208753307 U CN208753307 U CN 208753307U CN 201821435046 U CN201821435046 U CN 201821435046U CN 208753307 U CN208753307 U CN 208753307U
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- Prior art keywords
- bridge
- lead frame
- semiconductor bridge
- semiconductor
- electrode body
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
The utility model discloses a kind of Semiconductor Bridge Ignition devices, it mainly include a plastic packaging body, the plastic packaging body has carried out plastic encapsulation to metal contact wires, semiconductor bridge chip pad, the part semiconductor bridge chip in semiconductive bridge igniter, to completely cut off external environment, the mechanical damage in transport and operating process to device is avoided, the environmental suitability and reliability of device are improved.Simultaneously, semiconductive bridge bridge zone is not encapsulated, sufficiently expose semiconductive bridge bridge zone, be conducive to increase the contact area of ignition charge and semiconductive bridge bridge zone, provide the space of filling ignition charge as big as possible, be conducive to fill more ignition charges, improve the reliability of ignition and the duration of ignition.Semiconductor bridge chip is fixed on heat sink, has been effectively conducted bridge zone heat, has been reduced thermal resistance, and the safe current of Semiconductor Bridge Ignition device is improved.The packaging area of the utility model is more targeted, and batch micro operations are more convenient, and production cost is lower.
Description
Technical field
The utility model relates to the igniter in priming system production field, in particular to a kind of Semiconductor Bridge Ignition device.
Background technique
Semiconductive bridge is novel ignition element, compared with traditional axle wire form igniting element, when having low firing energy, detonation
Between it is short, small in size, resistance value discreteness is small the advantages that, be increasingly used widely in firer's industry.
Existing semiconductive bridge uses IC (integrated circuit), integrated circuit) technique makes on silicon wafer, by
It is a kind of fragile material in silicon, easily chipping, broken, causes component failure, in filling ignition charge in transport and use process
During agent, contact conductor causes open circuit vulnerable to physical damnification outside being exposed to.
Utility model content
In view of this, the present invention provides a kind of Semiconductor Bridge Ignition devices, to solve existing Semiconductor Bridge Ignition device institute
The problem of existing rapid wear is cherished.
The technical solution of the utility model is achieved in that
A kind of Semiconductor Bridge Ignition device, comprising:
Lead frame, semiconductor bridge chip, metal contact wires, electrode body and plastic packaging body；Wherein,
The electrode body is embedded in the lead frame, and the electrode body is from the first surface of the lead frame
Expose with the second surface of the lead frame, wherein the first of the second surface of the lead frame and the lead frame
Surface is opposite；
The semiconductor bridge chip is located at the side of the second surface of the lead frame, also, the semiconductive bridge core
Piece includes semiconductive bridge bridge zone and semiconductor bridge chip pad, and the semiconductive bridge bridge zone and the semiconductor bridge chip pad are electric
Connection；
The semiconductor bridge chip pad is electrically connected to the electrode body in the lead frame by the metal contact wires
The part that the second surface of frame is exposed；
The plastic packaging body is located at the side of the second surface of the lead frame, wherein the of the lead frame
Two surfaces, the electrode body are in the part that the second surface of the lead frame is exposed, the metal contact wires and described half
Conducting bridge chip bonding pad is encapsulated by the plastic packaging body, and the semiconductive bridge bridge zone is not by the plastic packaging body packet
Envelope.
Further, the Semiconductor Bridge Ignition device further includes heat sink；
It is described it is heat sink be embedded in the lead frame, and the heat sink first surface and institute from the lead frame
The second surface for stating lead frame exposes；
The semiconductor bridge chip is fixed on the part that the heat sink second surface from the lead frame is exposed；
It is encapsulated by the plastic packaging body part that the heat sink second surface from the lead frame is exposed.
Further, the Semiconductor Bridge Ignition device further includes mounting medium layer；Wherein,
The mounting medium layer is fixed between the described heat sink and described semiconductor bridge chip；Also,
The mounting medium layer is encapsulated by the plastic packaging body.
Further, the Semiconductor Bridge Ignition device further includes mounting medium layer；Wherein,
The semiconductor bridge chip heat sink is directly contacted with described；
The mounting medium layer is fixed on the part that the heat sink second surface from the lead frame is exposed, and
The mounting medium layer is also fixed on the semiconductor bridge chip.
Further, it is separate to be located at the semiconductor bridge chip for the semiconductive bridge bridge zone and the semiconductor bridge chip pad
The surface of the lead frame.
Further, outer surface of the plastic packaging body far from the lead frame includes third surface and the 4th surface；
Wherein,
In step-like between the third surface and the 4th surface；And
The third surface is lower than the 4th surface, and the semiconductive bridge bridge zone is located at the third surface.
Further, the semiconductive bridge bridge zone is lower than the 4th surface.
Further, the surface of the semiconductive bridge bridge zone is in the same plane or described half with the third surface
The surface of conducting bridge bridge zone is higher than the third surface or the surface of the semiconductive bridge bridge zone and is lower than the third surface.
Further, the electrode body includes first electrode body and second electrode body, and the metal contact wires include the first gold medal
Belong to connecting line and the second metal contact wires, the semiconductor bridge chip pad includes the first semiconductor bridge chip pad and the second half
Conducting bridge chip bonding pad；Wherein,
The first electrode body and the second electrode body are embedded in the lead frame, and the first electrode
Body and the second electrode body expose from the second surface of the first surface of the lead frame and the lead frame；
The first semiconductor bridge chip pad is electrically connected to the first electrode body by first metal contact wires
In the part that the second surface of the lead frame is exposed；
The second semiconductor bridge chip pad is electrically connected to the second electrode body by second metal contact wires
In the part that the second surface of the lead frame is exposed.
Further, the first electrode body is in the part that the second surface of the lead frame is exposed, second electricity
Polar body is in the part that the second surface of the lead frame is exposed, first metal contact wires, second metal connection
Line, the first semiconductor bridge chip pad and the second semiconductor bridge chip pad are encapsulated by the plastic packaging body.
From above scheme as can be seen that the Semiconductor Bridge Ignition device of the utility model, to metal contact wires, semiconductive bridge core
Piece pad, part semiconductor bridge chip have carried out plastic encapsulation, have completely cut off external environment, and it is right in transport and operating process to avoid
The mechanical damage of device improves the environmental suitability and reliability of device, and semiconductive bridge bridge zone is not encapsulated, sufficiently exposure
Semiconductive bridge bridge zone is conducive to the contact area for increasing ignition charge and semiconductive bridge bridge zone, provides filling as big as possible
The space of ignition charge is conducive to fill more ignition charges, improves the reliability of ignition and the duration of ignition, semiconductor
Bridge chip is fixed on heat sink, can be effectively conducted bridge zone heat, reduces thermal resistance, improves the safety electricity of Semiconductor Bridge Ignition device
Stream, reduces the mis-ignition probability of Semiconductor Bridge Ignition device, half encapsulated with use traditional ceramics electrode plug and metal electrode plug
Conducting bridge ignition device is compared, and the packaging area of the utility model is more targeted, and batch micro operations are more convenient, and production cost is more
It is low, wide market.
Detailed description of the invention
Fig. 1 is the schematic diagram of the first embodiment of the Semiconductor Bridge Ignition device of the utility model；
Fig. 2 is the bottom view of the first embodiment of the Semiconductor Bridge Ignition device of the utility model；
Fig. 3 is the perspective view of the first embodiment of the Semiconductor Bridge Ignition device of the utility model；
Fig. 4 is the bottom view of the second embodiment of the Semiconductor Bridge Ignition device of the utility model；
Fig. 5 is the perspective view of the second embodiment of the Semiconductor Bridge Ignition device of the utility model；
Fig. 6 is the perspective view of the 3rd embodiment of the Semiconductor Bridge Ignition device of the utility model.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, develop simultaneously reality referring to the drawings
Example is applied, the utility model is described in further detail.
Fig. 1, Fig. 2 and Fig. 3 respectively illustrate the three-dimensional knot of the first embodiment of the Semiconductor Bridge Ignition device of the utility model
Structure looks up structure and perspective structure.Wherein, look up structure be lower section from Fig. 1 upwards as viewed from direction structure.
Referring also to shown in Fig. 1, Fig. 2 and Fig. 3, the first embodiment of the Semiconductor Bridge Ignition device of the utility model includes drawing
Wire frame 1, semiconductor bridge chip 2, metal contact wires 3, electrode body 4 and plastic packaging body 5.
Wherein, electrode body 4 is embedded in lead frame 1, and electrode body 4 is from the first surface and lead of lead frame 1
The second surface of frame 1 exposes, wherein the second surface of lead frame 1 is opposite with the first surface of lead frame 1.As Fig. 1,
The orientation of embodiment illustrated in fig. 3, in the utility model specification, first surface such as lower surface, second surface such as upper surface,
Lower surface and upper surface are opposite, and below in explanation, the title of following surface and upper surface is illustrated, to show semiconductive bridge point
The positional relationship of each section in firearm.
Semiconductor bridge chip 2 is located at the side of the upper surface of lead frame 1, also, semiconductor bridge chip 2 includes semiconductor
Bridge bridge zone 21 and semiconductor bridge chip pad 22, semiconductive bridge bridge zone 21 and semiconductor bridge chip pad 22 are electrically connected.Semiconductor
In bridge chip 2, what it is positioned at 22 downside of semiconductive bridge bridge zone 21 and semiconductor bridge chip pad is semiconductor bridge chip substrate.Partly lead
The material of body bridge chip substrate is silica and the monocrystalline silicon being superimposed on silica, wherein monocrystalline silicon is thin layer, and thickness is for example
Less than 1 micron；The material of semiconductor bridge chip substrate can also be only with monocrystalline silicon, when only with monocrystalline silicon, monocrystalline silicon
Thickness be greater than 100 microns.
Semiconductor bridge chip pad 22 is electrically connected to electrode body 4 in the upper table of the lead frame 1 by metal contact wires 3
The part that face is exposed.
Plastic packaging body 5 is located at the side of the upper surface of lead frame 1, wherein the upper surface of lead frame 1, electrode body 4
In part, metal contact wires 3 and the semiconductor bridge chip pad 22 that the upper surface of lead frame 1 is exposed by plastic packaging body 5
Encapsulating, and semiconductive bridge bridge zone 21 is not encapsulated by plastic packaging body 5.
Fig. 4 shows the structure of looking up of the second embodiment of the Semiconductor Bridge Ignition device of the utility model, and Fig. 5 shows this
The perspective structure of the second embodiment of the Semiconductor Bridge Ignition device of utility model.Second embodiment it is different from first embodiment
Being in, second embodiment further comprises heat sink 6 on the basis of first embodiment.Heat sink 6 use metal material, such as copper,
Other high-thermal conductive metals or alloy can also be used.
Heat sink 6 are embedded in lead frame 1, and heat sink 6 from the lower surface of lead frame 1 and the upper table of lead frame 1
It shows out.Semiconductor bridge chip 2 is fixed on heat sink 6, i.e., semiconductor bridge chip 2 is fixed on the heat sink 6 upper tables from lead frame 1
The part that face is exposed.It is encapsulated by plastic packaging body 5 heat sink 6 parts exposed from the upper surface of lead frame 1.
Fig. 6 shows the perspective structure of the 3rd embodiment of the Semiconductor Bridge Ignition device of the utility model, 3rd embodiment
Being further comprises mounting medium layer 7 on the basis of second embodiment.Wherein, mounting medium layer 7 is fixed on heat sink 6 and partly leads
Between body bridge chip 2.Also, mounting medium layer 7 is encapsulated by plastic packaging body 5.
As the alternative scheme of 3rd embodiment, semiconductor bridge chip 2 is directly contacted with heat sink 6.Mounting medium layer 7 is solid
Due to the part that heat sink 6 are exposed from the upper surface of lead frame 1, and mounting medium layer 7 is also fixed on semiconductor bridge chip
2, that is to say, that mounting medium layer 7 is fixed on heat sink 6 and is arranged in around semiconductor bridge chip 2, and mounting medium
Layer 7 is also fixed on the surrounding side wall of semiconductor bridge chip 2.
In each embodiment of the utility model, semiconductive bridge bridge zone 21 and semiconductor bridge chip pad 22 are located at semiconductor
Surface of the bridge chip 2 far from lead frame 1.That is, according to shown in Fig. 1, Fig. 3, Fig. 5, Fig. 6, semiconductive bridge bridge zone 21 and semiconductor
Bridge chip pad 22 is located at the upper surface of semiconductor bridge chip 2, and the upper surface of the semiconductor bridge chip 2 is far from lead frame 1.
In each embodiment of the utility model, as shown in Fig. 1, Fig. 3, Fig. 5, Fig. 6, plastic packaging body 5 is far from lead frame
The outer surface of frame 1 includes third surface 51 and the 4th surface 52.It wherein, is in step between third surface 51 and the 4th surface 52
Shape, and third surface 51 is lower than the 4th surface 52, and semiconductive bridge bridge zone 21 is located at third surface 51.
In each embodiment of the utility model, semiconductive bridge bridge zone 21 is lower than the 4th surface 52.
In each embodiment of the utility model, the surface of semiconductive bridge bridge zone 21 can be located at same with third surface 51
The surface that perhaps surface of semiconductive bridge bridge zone 21 can be higher than third surface 51 or semiconductive bridge bridge zone 21 in plane can
To be lower than third surface 51.
As shown in Figures 1 to 6, in each embodiment of the utility model, electrode body 4 includes first electrode body 41 and the second electricity
Polar body 42, wherein first electrode is for example positive, second electrode such as cathode.Metal contact wires 3 include the first metal contact wires 31
With the second metal contact wires 32, semiconductor bridge chip pad 22 includes the first semiconductor bridge chip pad 221 and the second semiconductor
Bridge chip pad 222.Wherein, first electrode body 41 and second electrode body 42 are embedded in lead frame 1, and first electrode
Body 41 and second electrode body 42 expose from the lower surface of lead frame 1 and the upper surface of lead frame 1.First semiconductive bridge core
Piece pad 221 is electrically connected to what first electrode body 41 was exposed in the upper surface of lead frame 1 by the first metal contact wires 31
Part.Second semiconductor bridge chip pad 222 is electrically connected to second electrode body 42 in lead frame by the second metal contact wires 32
The part that the upper surface of frame 1 is exposed.Part that first electrode body 41 is exposed in the upper surface of lead frame 1, second electrode
Part that body 42 is exposed in the upper surface of lead frame 1, the first metal contact wires 31, the second metal contact wires 32, the first half
Conducting bridge chip bonding pad 221 and the second semiconductor bridge chip pad 222 are encapsulated by plastic packaging body 5.
In the embodiment of the present invention, lead frame 1 is the plastics of a kind of embedded metal copper pad and interconnection line, is a kind of pre-
Product can be described as plastic lead frame or die-attach area machine, because comprising metal and plastics both materials, abbreviation lead
Frame.
The Semiconductor Bridge Ignition device of the utility model, to metal contact wires, semiconductor bridge chip pad, part semiconductor bridge
Chip (the most semiconductor bridge chip substrate region of 21 downside of semiconductive bridge bridge zone) has carried out plastic encapsulation, has completely cut off outer
Boundary's environment avoids the mechanical damage in transport and operating process to device, improves the environmental suitability and reliability of device,
Semiconductive bridge bridge zone is not encapsulated, and sufficiently exposes semiconductive bridge bridge zone, is conducive to increase ignition charge and semiconductive bridge bridge zone
Contact area, provide the space of filling ignition charge as big as possible, be conducive to fill more ignition charges, improve ignition
Reliability and ignition duration, semiconductor bridge chip is fixed on heat sink, can be effectively conducted bridge zone heat, reduces heat
Resistance, improves the safe current of Semiconductor Bridge Ignition device, reduces the mis-ignition probability of Semiconductor Bridge Ignition device, traditional with using
Ceramic electrode plug is compared with the Semiconductor Bridge Ignition device that metal electrode plug encapsulates, and the packaging area of the utility model is more directed to
Property, batch micro operations are more convenient, and production cost is lower, wide market.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Within the spirit and principle of utility model, any modification, equivalent substitution, improvement and etc. done should be included in the utility model
Within the scope of protection.
Claims (10)
1. a kind of Semiconductor Bridge Ignition device characterized by comprising
Lead frame, semiconductor bridge chip, metal contact wires, electrode body and plastic packaging body；Wherein,
The electrode body is embedded in the lead frame, and first surface and institute of the electrode body from the lead frame
The second surface for stating lead frame exposes, wherein the first surface of the second surface of the lead frame and the lead frame
Relatively；
The semiconductor bridge chip is located at the side of the second surface of the lead frame, also, the semiconductor bridge chip packet
Semiconductive bridge bridge zone and semiconductor bridge chip pad are included, the semiconductive bridge bridge zone and the semiconductor bridge chip pad are electrically connected
It connects；
The semiconductor bridge chip pad is electrically connected to the electrode body in the lead frame by the metal contact wires
The part that second surface is exposed；
The plastic packaging body is located at the side of the second surface of the lead frame, wherein the second table of the lead frame
Face, the electrode body are in the part that the second surface of the lead frame is exposed, the metal contact wires and the semiconductor
Bridge chip pad is encapsulated by the plastic packaging body, and the semiconductive bridge bridge zone is not encapsulated by the plastic packaging body.
2. Semiconductor Bridge Ignition device according to claim 1, it is characterised in that:
The Semiconductor Bridge Ignition device further includes heat sink；
It is described it is heat sink be embedded in the lead frame, and the heat sink first surface from the lead frame and described draw
The second surface of wire frame exposes；
The semiconductor bridge chip is fixed on the part that the heat sink second surface from the lead frame is exposed；
It is encapsulated by the plastic packaging body part that the heat sink second surface from the lead frame is exposed.
3. Semiconductor Bridge Ignition device according to claim 2, it is characterised in that:
The Semiconductor Bridge Ignition device further includes mounting medium layer；Wherein,
The mounting medium layer is fixed between the described heat sink and described semiconductor bridge chip；Also,
The mounting medium layer is encapsulated by the plastic packaging body.
4. Semiconductor Bridge Ignition device according to claim 2, it is characterised in that:
The Semiconductor Bridge Ignition device further includes mounting medium layer；Wherein,
The semiconductor bridge chip heat sink is directly contacted with described；
The mounting medium layer is fixed on the part that the heat sink second surface from the lead frame is exposed, and described
Mounting medium layer is also fixed on the semiconductor bridge chip.
5. Semiconductor Bridge Ignition device according to claim 1, it is characterised in that:
The semiconductive bridge bridge zone and the semiconductor bridge chip pad are located at the semiconductor bridge chip far from the lead frame
The surface of frame.
6. Semiconductor Bridge Ignition device according to claim 1, it is characterised in that:
Outer surface of the plastic packaging body far from the lead frame includes third surface and the 4th surface；Wherein,
In step-like between the third surface and the 4th surface；And
The third surface is lower than the 4th surface, and the semiconductive bridge bridge zone is located at the third surface.
7. Semiconductor Bridge Ignition device according to claim 6, it is characterised in that:
The semiconductive bridge bridge zone is lower than the 4th surface.
8. Semiconductor Bridge Ignition device according to claim 7, it is characterised in that:
The surface of the semiconductive bridge bridge zone is in the same plane with the third surface or the semiconductive bridge bridge zone
Surface is higher than the third surface or the surface of the semiconductive bridge bridge zone and is lower than the third surface.
9. Semiconductor Bridge Ignition device according to any one of claims 1 to 8, it is characterised in that:
The electrode body includes first electrode body and second electrode body, and the metal contact wires include the first metal contact wires and the
Two metal contact wires, the semiconductor bridge chip pad include that the first semiconductor bridge chip pad and the second semiconductor bridge chip are welded
Disk；Wherein,
The first electrode body and the second electrode body are embedded in the lead frame, and the first electrode body and
The second electrode body exposes from the second surface of the first surface of the lead frame and the lead frame；
The first semiconductor bridge chip pad is electrically connected to the first electrode body in institute by first metal contact wires
State the part that the second surface of lead frame is exposed；
The second semiconductor bridge chip pad is electrically connected to the second electrode body in institute by second metal contact wires
State the part that the second surface of lead frame is exposed.
10. Semiconductor Bridge Ignition device according to claim 9, it is characterised in that:
The first electrode body draws in the part that the second surface of the lead frame is exposed, the second electrode body described
Part that the second surface of wire frame is exposed, first metal contact wires, second metal contact wires, described the first half
Conducting bridge chip bonding pad and the second semiconductor bridge chip pad are encapsulated by the plastic packaging body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821435046.6U CN208753307U (en) | 2018-09-03 | 2018-09-03 | A kind of Semiconductor Bridge Ignition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821435046.6U CN208753307U (en) | 2018-09-03 | 2018-09-03 | A kind of Semiconductor Bridge Ignition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208753307U true CN208753307U (en) | 2019-04-16 |
Family
ID=66082798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821435046.6U Active CN208753307U (en) | 2018-09-03 | 2018-09-03 | A kind of Semiconductor Bridge Ignition device |
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| CN (1) | CN208753307U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267651A (en) * | 2021-12-21 | 2022-04-01 | 北京智芯传感科技有限公司 | Bridge diaphragm type energy conversion element packaging structure in reserved medicine loading chamber form |
-
2018
- 2018-09-03 CN CN201821435046.6U patent/CN208753307U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267651A (en) * | 2021-12-21 | 2022-04-01 | 北京智芯传感科技有限公司 | Bridge diaphragm type energy conversion element packaging structure in reserved medicine loading chamber form |
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