CN106468604A - High-temp pressure sensor and preparation method thereof - Google Patents
High-temp pressure sensor and preparation method thereof Download PDFInfo
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- CN106468604A CN106468604A CN201610863805.8A CN201610863805A CN106468604A CN 106468604 A CN106468604 A CN 106468604A CN 201610863805 A CN201610863805 A CN 201610863805A CN 106468604 A CN106468604 A CN 106468604A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
Abstract
The present invention relates to a kind of high-temp pressure sensor and preparation method thereof, belong to micro code-lock field, this high-temp pressure sensor, including silicon substrate, setting sensing element on a silicon substrate, also include the intermediate made by high temperature resistant electrically non-conductive material arranging on a silicon substrate and the upper strata silicon chip being arranged in intermediate, silicon substrate, intermediate and upper strata silicon chip are bonded successively, it is formed with the cavity of storage sensing element between silicon substrate and intermediate, this high-temp pressure sensor is due to by silicon substrate, intermediate and upper strata silicon chip are sequentially overlapped to form the sandwich structure of " silicon substrate intermediate silicon chip ", stress mismatch is cancelled out each other, to reach stress equilibrium；And the high-temp pressure sensor made by the manufacture method of this high-temp pressure sensor is due to defining the sandwich structure of " silicon substrate intermediate silicon chip " so that stress mismatch is cancelled out each other, to reach stress equilibrium.
Description
Technical field
The present invention relates to a kind of high-temp pressure sensor and preparation method thereof, belong to micro code-lock field.
Background technology
High-temperature-resistance pressure sensor, as one of the major product of MEMS (MEMS), is widely used in oil
Pressure measxurement under the hot environment of the field such as work, automotive electronics, Aero-Space.Commercial pressure transducer is mainly silicon and expands at present
Scattered type piezoresistive pressure sensor, because it is with monocrystal silicon as substrate, makes p-type diffusion resistance in N-type silicon substrate, relies on reverse-biased
PN junction realizes electric isolation, and when operating temperature is more than 120 DEG C, PN junction leakage current aggravates, and the performance of sensor can severe exacerbation
So that losing efficacy.
Additionally, high temperature packaging technique is also another key factor of restriction high-temp pressure sensor development.Pass in pressure
In the packaging technology of sensor chip, mostly using glass paste low sintering method, chip and flexible member are combined into one
Body, or adopt chip/glass electrostatic bonding technology, all there is coupling or the stress of storeroom thermal coefficient of expansion in two kinds of techniques
Elimination problem.And, lametta mainly or is welded to sensor chip by the connection for sensor chip and periphery
In metal solder joints, then again on pin or printed circuit board (PCB).These thin gold threads or weld are easily because of high vibration or quick
Pressures cycle and produce fatigue, or even break down.
In order to solve the problems, such as electric leakage under the mal-conditions such as high temperature for the pressure transducer and performance failure, correlation is known both at home and abroad
Name scientific research institution and Sensitive Object all put into ample resources and have done numerous studies to high-temperature-resistance pressure sensor, and achieve not
Few achievement in research.Such as, be conducive to improving the high-temperature behavior of pressure transducer, phase using silicon-on-insulator (SOI) backing material
For traditional body silicon pressure sensor, SOI pressure transducer isolates to replace PN junction isolation so that device using insulation oxygen buried layer
Part is born resistant to elevated temperatures ability and is greatly enhanced.
Further, Sen Sata company of the U.S. have developed the gasoline direct rail pressure sensing based on sealed silicon foil gauge MSG technology
Device, it adopts piezo resistive technology, and silicon foil gauge is attached on metal diaphragm by micro- the melting of glass, through sealing, operating temperature up to-
40～140 DEG C.However, for the pressure measxurement under more than 150 DEG C higher temperature environment, this sensor is also inapplicable.
Again such as, Ke Laite company of the U.S. adopts BESOI technology and the SOI superelevation of " welding lead " design encapsulation preparation
Temperature and pressure force transducer, operating temperature is up to -55～482 DEG C.Additionally, sensor chip and protection layer wafer are also passed through by Ke Laite
Electrostatic bonding technology groups dress up sensor diaphragm, then the conduct between induction chip and particular design joint with high temperature conductive glass
Circuit connects, and the gold thread pad solving conventional pressure sensor holds fatigable problem, but answering after its bonding packaging
Dynamic balance problem is still difficult to eliminate.
In sum, the encapsulation of existing high-temp pressure sensor is mostly using the low sintering method of glass paste or adopt
With single silicon chip-glass electrostatic bonding technology, there is stress equilibrium problem；Traditionally silicon and circuit are passed through by sensor
Thin spun gold is connected, and thin gold thread or weld easily produce fatigue because of high vibration or quick pressures cycle, or even event
Barrier；The temperature that in prior art, some high-temp pressure sensors can bear is not also very high, needs to be improved further resistance to
High-temperature behavior.
Content of the invention
It is an object of the invention to provide one kind can make stress mismatch cancel out each other, to reach the high temperature pressure of stress equilibrium
Sensor.
For reaching above-mentioned purpose, the present invention provides following technical scheme：A kind of high-temp pressure sensor, including silicon substrate,
It is arranged on the sensing element on described silicon substrate, also include being arranged on made by high temperature resistant electrically non-conductive material on described silicon substrate
The intermediate that becomes and be arranged on upper strata silicon chip in described intermediate, described silicon substrate, intermediate and upper strata silicon chip according to
Secondary bonding, is formed with the cavity receiving described sensing element between described silicon substrate and intermediate.
Further：The thickness of described silicon substrate is identical with the thickness of upper strata silicon chip；Or, described silicon substrate and upper layer of silicon
The thickness deviation scope of piece is in ± 10um.
Further：At least two through holes are formed with described high-temp pressure sensor, each described through hole sequentially runs through
Intermediate and upper strata silicon chip, are formed with conductive pole in each described through hole, one end of described conductive pole is electrical with sensing element
Connect, the other end is exposed on the silicon chip of described upper strata.
Further：Each described through hole includes running through the first sub-through hole of described intermediate and runs through described upper layer of silicon
Second sub-through hole of piece；Described first sub-through hole is identical with the shape of the second sub-through hole, or described first sub-through hole and second
The shape of sub-through hole differs.
Further：Described intermediate is provided with opening towards the groove of described silicon substrate, and described cavity is by described silicon
The described groove that substrate is closed in described intermediate is formed；Or, described silicon substrate is provided with opening towards described intermediate base
The groove of piece, described cavity is closed the described groove on described silicon substrate by described intermediate and is formed；Or, described intermediate base
Piece is provided with opening towards the upper groove of described silicon substrate, described silicon substrate offers opening towards under described intermediate
Groove, described low groove and upper groove are symmetrical arranged, and described cavity is enclosed to set by described low groove and upper groove and formed.
Further：Described sensing element is varistor or is based on capacitive sensitive diaphragm.
Further：Described intermediate is sheet glass.
Present invention also offers a kind of manufacture method of high-temp pressure sensor, comprise the steps：
S1：There is provided silicon substrate, described silicon substrate is disposed with body silicon layer, insulating barrier and body silicon thin film, institute from bottom to up
State silicon substrate and there is the upper and lower surface being disposed opposite to each other；
S2：Sensing element and the metal electricity being electrically connected with described sensing element are formed on the upper surface of described silicon substrate
Pole；
S3：There is provided an intermediate made by high temperature resistant electrically non-conductive material, described intermediate has and is disposed opposite to each other
Front and back, on the back side of described intermediate formed groove；The back side of described intermediate and described silicon substrate
Upper surface is bonded, and sealed groove is to form the cavity of sealing sensing element；
S4：There is provided silicon chip, described silicon chip includes the top surface being disposed opposite to each other and bottom surface；By the bottom surface of described silicon chip and intermediate base
The front bonding of piece；
S5：Draw metal electrode.
Present invention also offers a kind of manufacture method of high-temp pressure sensor, comprise the steps：
S1：There is provided silicon substrate, described silicon substrate is disposed with body silicon layer, insulating barrier and body silicon thin film, institute from bottom to up
State silicon substrate and there is the upper and lower surface being disposed opposite to each other, the upper surface of described silicon substrate is formed with low groove；
S2：Sensing element and the metal electricity being electrically connected with described sensing element are formed on the upper surface of described silicon substrate
Pole, described sensing element is located in described low groove；
S3：There is provided an intermediate made by high temperature resistant electrically non-conductive material, described intermediate has and is disposed opposite to each other
Front and back, the back side of described intermediate is bonded with the upper surface of described silicon substrate, so that low groove is sealed close to be formed
The cavity of envelope sensing element；
S4：There is provided silicon chip, described silicon chip includes the top surface being disposed opposite to each other and bottom surface；By the bottom surface of described silicon chip and intermediate base
The front bonding of piece；
S5：Draw metal electrode.
Further：The thickness of described silicon substrate is identical with the thickness of silicon chip；Or, the thickness of described silicon substrate and silicon chip
Deviation range is in ± 10um.
Further：Described step S4 also includes：The front of the bottom surface of silicon chip and intermediate is carried out anode linkage, and
Silicon chip is carried out thinning make its thickness identical with the thickness of silicon substrate or make both thickness deviation scopes in ± 10um.
Further：Described step S3 also includes：In described intermediate formed this intermediate of insertion front and
First sub-through hole at the back side；When described intermediate is bonded with described silicon substrate, described metal electrode passes through the first sub-through hole
With ft connection；
Described step S4 also includes：Described silicon chip forms the top surface of this silicon chip of insertion and the second sub-through hole of bottom surface,
When described silicon chip is bonded with intermediate, described first sub-through hole is connected with the second sub-through hole to form through hole；
Described step S5 is specially：In described through hole, injection metal paste is to draw metal electrode.
Further：Described step S3 also includes：In described intermediate formed this intermediate of insertion front and
First sub-through hole at the back side；When described intermediate is bonded with described silicon substrate, described metal electrode passes through the first sub-through hole
With ft connection；
Described step S4 also includes：Described silicon chip forms the top surface of this silicon chip of insertion and the second sub-through hole of bottom surface,
When described silicon chip is bonded with intermediate, described first sub-through hole is connected with the second sub-through hole to form through hole；
Described step S5 is specially：In described through hole, injection metal paste is to draw metal electrode.
Further：Described step S2 specifically includes：
S21：Body silicon thin film on silicon substrate is carried out with dense boron doping, forms doped layer；Described doped layer is carried out photoetching,
Etching, preparation constitutes varistor and the resistive layer of Wheatstone bridge；
S22：Metallic film deposition is passed through on described resistive layer and the method preparation of micro-nano technology forms metal electrode.
Further：Low groove is provided with described silicon substrate, described low groove is symmetrical arranged with the groove of intermediate,
In step s3, when described silicon substrate is bonded with intermediate, described cavity is enclosed by the groove of low groove and intermediate and sets
Formed.
Further：Described step S1 or step S3 also include：Remove the part body being located at below sensing element
Silicon layer, to form cavity and the pressure sensitive film of silicon substrate.
The beneficial effects of the present invention is：The high-temp pressure sensor of the present invention due to by silicon substrate, intermediate and on
Layer silicon chip is sequentially overlapped with the sandwich structure forming " silicon substrate-intermediate-silicon chip " so that stress mismatch is cancelled out each other,
To reach stress equilibrium；And the high-temp pressure sensor made by the manufacture method of this high-temp pressure sensor is due to defining
The sandwich structure of " silicon substrate-intermediate-silicon chip " so that stress mismatch is cancelled out each other, to reach stress equilibrium.
Further, since the high-temp pressure sensor of the present invention is using sequentially passing through intermediate and upper strata silicon chip being formed
Through hole, and form conductive pole in through hole, by this conductive pole, the electrical connection of sensing element is drawn, such that it is able to solve existing skill
" occur due to thin gold thread or welding easily to produce because of high vibration or quick pressures cycle in thin gold thread or weld in art
The problem of fatigue, and then initiating failure ".
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of description, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Brief description
Fig. 1 be one embodiment of the invention shown in high-temp pressure sensor longitudinal profile schematic diagram；
The process chart of high-temp pressure sensor shown in Fig. 1 for the Fig. 2 to Fig. 9.
Specific embodiment
With reference to the accompanying drawings and examples, the specific embodiment of the present invention is described in further detail.Hereinafter implement
Example is used for the present invention is described, but is not limited to the scope of the present invention.
Refer to Fig. 1, a kind of high-temp pressure sensor shown in a preferred embodiment of the present invention includes silicon substrate 1, setting
In the sensing element 21 on described silicon substrate 1, it is arranged on described silicon substrate 1 and the gold with the electric connection of described sensing element 21
Belong to electrode 3, the intermediate 4 made by high temperature resistant electrically non-conductive material being arranged on described silicon substrate 1 and be arranged on described
Upper strata silicon chip 5 in intermediate 4.Described silicon substrate 1, intermediate 4 and upper strata silicon chip 5 are bonded successively, described silicon substrate 1 with
It is formed with the cavity (non-label) receiving described sensing element 21, described metal electrode 3 passes through electric leading-out piece between intermediate 4
6 extractions.In the prior art, the encapsulation technology of current high-temp pressure sensor mostly adopts a piece of silicon chip and a sheet glass key
Close, the thermal coefficient of expansion due to silicon chip and sheet glass mismatches, there is stress mismatch and imbalance problem.And the present embodiment
In, due to silicon substrate 1, intermediate 4 and upper strata silicon chip 5 being sequentially overlapped to form " silicon substrate 1- intermediate 4- upper layer of silicon
The sandwich structure of piece 5 " so that stress mismatch is cancelled out each other, to reach stress equilibrium, therefore in the presence of overcoming prior art
Unequal power distribution problem, be particularly well-suited in hot environment.Described silicon substrate 1, intermediate 4, upper strata silicon chip 5 key successively
Close.
In order to reach optimal stress equilibrium, the thickness of described silicon substrate 1 is identical with the thickness of upper strata silicon chip 5；Or, silicon
The thickness deviation scope of substrate 1 and upper strata silicon chip 5 is in ± 10um；Wherein, optimum efficiency is thickness and the upper strata silicon chip of silicon substrate 1
5 thickness is identical, it is contemplated that error present in technique preparation process, can make thickness deviation scope in ± 10um.Existing
Reduction process is adopted to control the thickness of silicon substrate 1 and upper strata silicon chip 5 in some preparation process.In order to realize minimization, silicon substrate 1
Thickness be 100～400um.Described silicon substrate 1 is SOI silicon, and its crystal orientation is<100>.Described silicon substrate 1 sets from bottom to up successively
It is equipped with body silicon layer 11, insulating barrier 12 and body silicon thin film (non-label).Described silicon substrate 1 has the upper surface being disposed opposite to each other and (does not mark
Number) and lower surface (non-label), the part body silicon layer 11 positioned at sensing element 21 lower section has been removed to form cavity 14 and pressure
Power sensitive membrane 15, this pressure sensitive film 15 is a part for body silicon layer 11, and cavity 14 prolongs from the following table of silicon substrate 1 surface that faces up
Stretch and formed.Described sensing element 21 for varistor or can be based on capacitive sensitive diaphragm, but in view of varistor has
The advantage that sensitivity is high, precision is good, the varistor of preferably varistor, specially Wheatstone bridge.On described silicon substrate 1
Be additionally provided with resistive layer 22, described sensing element 21 and resistive layer 22 be by described body silicon thin film 13 is carried out dense boron doping and
Etch and constitute.Described metal electrode 3 is formed on resistive layer 22, and the material of described metal electrode 3 is resistant to elevated temperatures metal material
Material, the preferably combination of one or more refractory metal material such as Ti, Ni, Pt, Cr.
Described intermediate 4 can adopt sheet glass.In the present embodiment, described intermediate 4 is provided with opening towards institute
State the groove 41 of silicon substrate 1, described cavity is closed the described groove 41 in described intermediate 4 by described silicon substrate 1 and formed.Really
So, described silicon substrate 1 is provided with opening towards the groove of described intermediate 4, and described cavity closes institute by described intermediate 4
The described groove stated on silicon substrate 1 forms (not shown)；Or, described intermediate 4 is provided with opening towards described silicon substrate 1
Upper groove, described silicon substrate 1 offers opening towards the low groove of described intermediate 4, described low groove and upper groove
It is symmetrical arranged, described cavity is enclosed to set by described low groove and upper groove and forms (not shown).
In order to realize non-leaded package design, described high-temp pressure sensor is formed with least two through holes, each institute
State through hole and sequentially run through intermediate 4 and upper strata silicon chip 5, in each described through hole, be formed with conductive pole, the one of described conductive pole
End is electrically connected with sensing element 21, and the other end is exposed on described upper strata silicon chip 5, and this conductive pole is electric leading-out piece 6.Pass through
This kind of design can solve " to occur in thin gold thread or weld easily because of high vibration due to thin gold thread or welding in prior art
Or quick pressures cycle and produce fatigue, and then initiating failure " problem.Described conductive pole 6 passes through to irrigate gold into through hole
Belong to slurry and formed, to realize drawing metal electrode 3.
Each described through hole includes running through the first sub-through hole 42 of described intermediate 4 and runs through described upper strata silicon chip 5
Second sub-through hole 51；Described first sub-through hole 42 can be identical with the shape of the second sub-through hole 51, or described first sub-through hole
42 and second the shape of sub-through hole 51 can also differ.In the present embodiment, described first sub-through hole 42 is in circular platform type, described
Second sub-through hole 51 is in column type.
The extension of described first sub-through hole 42 is shaped as straight line, or curve, or bending-like, or by least one straight line
Section and at least one curved section connect the combination being formed；The extension of described second sub-through hole 51 is shaped as straight line, or curve, or
Bending-like, or the combination being formed by least one straight section and the connection of at least one curved section.In the present embodiment, in order to be electrically connected with
Stable, conductivity is higher, and the extension of described first sub-through hole 42 is shaped as straight line, and the extension of described second sub-through hole 51 is formed as
Straight line.Described intermediate 4 has the front (non-label) being disposed opposite to each other and the back side (non-label), and described upper strata silicon chip 5 has
The top surface (non-label) being disposed opposite to each other and bottom surface (non-label), dorsad intermediate 4 is arranged the top surface of described upper strata silicon chip 5, institute
State the first sub-through hole 42 and extend through the back side from the described back side that just facing, described second sub-through hole 51 is from described top surface towards bottom surface
Extend through bottom surface.One end that described conductive pole 6 is exposed on described upper strata silicon chip 5 is exposed junction 61, for the ease of external
Circuit, described exposed junction 61 is exposed on the top surface of described upper strata silicon chip 5.
Embodiment one, the manufacture method of above-mentioned high-temp pressure sensor includes comprising the steps as follows S1 to S5.
Incorporated by reference to Fig. 2, S1：There is provided silicon substrate 1, described silicon substrate 1 is disposed with body silicon layer 11, insulating barrier from bottom to up
12 and body silicon thin film 13, described silicon substrate 1 has the upper surface 16 being disposed opposite to each other and lower surface 17.Described silicon substrate 1 is crystal orientation
For<100>SOI substrate.
Incorporated by reference to Fig. 3 and Fig. 4, S2：The upper surface (non-label) of described silicon substrate 1 upper formed sensing element 21 and with institute
State the metal electrode 3 of sensing element 21 electric connection.Described sensing element 21 is varistor or is based on capacitive sensitive membrane
Piece, but in view of varistor has the advantages that sensitivity is high, precision is good, preferably varistor, specially Wheatstone bridge
Varistor.This step S2 is specially：
Incorporated by reference to Fig. 3, S21：Body silicon thin film in SOI substrate 1 is carried out with dense boron doping, forms doped layer；And this is mixed
Diamicton carries out photoetching, etching, and preparation constitutes varistor 21 and the resistive layer 22 of Wheatstone bridge；
Incorporated by reference to Fig. 4, S22：Metallic film deposition is passed through on resistive layer 22 and the method preparation of micro-nano technology forms gold
Belong to electrode 3, the material of this metal electrode 3 is resistant to elevated temperatures metal material, preferably one or more resistance to height such as Ti, Ni, Pt, Cr
The combination of warm metal material.
Incorporated by reference to Fig. 5 to 8, S3：One intermediate 4 made by high temperature resistant electrically non-conductive material, described intermediate base are provided
Piece 4 has the front 43 being disposed opposite to each other and the back side 44, forms groove 41 on the back side 44 of described intermediate 4；Described centre
The back side 44 of substrate 4 is bonded with the upper surface of described silicon substrate 1, and sealed groove 41 is to form the cavity of sealing sensing element 21.
Described intermediate 4 adopts sheet glass.This step S3 specifically includes：
In conjunction with Fig. 5, S31：One sheet glass 4 is provided, its back side 44 is carried out with photoetching, etching to form groove 41；Then again
The front 43 running through this sheet glass 4 is formed using laser or blasting craft on described sheet glass 4 and first son at the back side 44 is logical
Hole 42；
In conjunction with Fig. 6, S32：The front of the upper surface of silicon substrate 1 and sheet glass 4 is carried out anode linkage, so that groove 41 is sealed
To form the cavity of sealing varistor 21；And when described intermediate 4 is bonded with described silicon substrate 1, metal electrode 3 passes through
The first sub-through hole 42 on sheet glass 4 and ft connection；
In conjunction with Fig. 7, S33：Using the front of sheet glass 4 after reduction process respectively para-linkage and the lower surface of silicon substrate 1
Carry out thinning, then remove the part body silicon being located at varistor 21 lower section by the method for photoetching, dry etching or wet etching
Layer 11, to form cavity 14 and the pressure sensitive film 15 of silicon substrate 1；
Incorporated by reference to Fig. 8 and Fig. 9, S4：There is provided silicon chip 5, described silicon chip 5 includes the top surface 52 being disposed opposite to each other and bottom surface 53；Will
The bottom surface 53 of described silicon chip 5 is bonded with the front of intermediate 4.Specifically：
Incorporated by reference to Fig. 8, provide a silicon chip 5, this includes the top surface 52 being disposed opposite to each other and bottom surface 53, it adopts silicon hole technology
The top surface 52 of this silicon chip 5 of insertion and the second sub-through hole 51 of bottom surface 53 are formed on described silicon chip 5；
Incorporated by reference to Fig. 9, the back side of silicon chip 5 and sheet glass 4 is carried out anode linkage, now, described first sub-through hole 42 with
Second sub-through hole 51 connects to form through hole；And silicon chip 5 carried out thinning make its thickness identical with the thickness of silicon substrate 1, thus
Form " SOI si-glass-silicon " sandwich structure.In view of error present in technique preparation process, final silicon chip can be allowed
5 with the thickness deviation scope of silicon substrate 1 in ± 10um.
Incorporated by reference to Fig. 1, S5：Draw metal electrode 3.It is specially：In described through hole, injection metal paste forms conductive pole 6
To draw metal electrode 3.This metal paste is preferably silver paste.
In addition to the present embodiment, in concrete making high-temp pressure sensor, low groove can be set on a silicon substrate, described
Low groove is symmetrical arranged with the groove of intermediate, in step s3, when described silicon substrate is bonded with intermediate, described chamber
Body is enclosed to set by the groove of low groove and intermediate and is formed.In addition, the cavity of silicon substrate and pressure sensitive film can be in steps S1
Middle formation, includes in described step S1：Remove the part body silicon layer being located at below sensing element, to form the sky of silicon substrate
Chamber and pressure sensitive film；Or, the silicon substrate that step S1 is provided is already formed with cavity and pressure sensitive film.
Embodiment two, above-mentioned high-temp pressure sensor can also adopt following manufacture method：Comprise the steps：
S1：There is provided silicon substrate, described silicon substrate is disposed with body silicon layer, insulating barrier and body silicon thin film, institute from bottom to up
State silicon substrate and there is the upper and lower surface being disposed opposite to each other, the upper surface of described silicon substrate is formed with low groove；
S2：Sensing element and the metal electricity being electrically connected with described sensing element are formed on the upper surface of described silicon substrate
Pole, described sensing element is located in described low groove；
S3：There is provided an intermediate made by high temperature resistant electrically non-conductive material, described intermediate has and is disposed opposite to each other
Front and back, the back side of described intermediate is bonded with the upper surface of described silicon substrate, so that low groove is sealed close to be formed
The cavity of envelope sensing element；
S4：There is provided silicon chip, described silicon chip includes the top surface being disposed opposite to each other and bottom surface；By the bottom surface of described silicon chip and intermediate base
The front bonding of piece；
S5：Draw metal electrode.
Wherein, described step S4 can also include：The front of the bottom surface of silicon chip and intermediate is carried out anode linkage, and
Silicon chip is carried out thinning make its thickness identical with the thickness of silicon substrate or make both thickness deviation scopes in ± 10um.
Wherein, described step S3 also includes：The front and back of this intermediate of insertion is formed on described intermediate
The first sub-through hole；When described intermediate is bonded with described silicon substrate, described metal electrode passes through the first sub-through hole with outward
Portion connects；
Described step S4 also includes：Described silicon chip forms the top surface of this silicon chip of insertion and the second sub-through hole of bottom surface,
When described silicon chip is bonded with intermediate, described first sub-through hole is connected with the second sub-through hole to form through hole；
Described step S5 is specially：In described through hole, injection metal paste is to draw metal electrode.
The manufacture method of high-temp pressure sensor of above-mentioned the present embodiment two and the high-temp pressure sensor of embodiment one
Manufacture method in addition to the generation type of cavity is different with opportunity, basic simlarity, therefore adoptable scheme and replacing in embodiment one
For method, equally applicable in embodiment two, such as：Described step S1 or step S3 also include：Remove and be located at sensitive unit
Part body silicon layer below part, to form cavity and the pressure sensitive film of silicon substrate；Or, the silicon substrate that step S1 is provided
Already formed with cavity and pressure sensitive film.
In sum：Above-mentioned high-temp pressure sensor due to by silicon substrate, intermediate and upper strata silicon chip be sequentially overlapped with
Formed " silicon substrate-intermediate-silicon chip " sandwich structure so that stress mismatch is cancelled out each other, to reach stress equilibrium；And
High-temp pressure sensor made by the manufacture method of this high-temp pressure sensor is due to defining " silicon substrate-intermediate-silicon
The sandwich structure of piece " so that stress mismatch is cancelled out each other, to reach stress equilibrium.
Further, since the high-temp pressure sensor of the present invention is using sequentially passing through intermediate and upper strata silicon chip being formed
Through hole, and form conductive pole in through hole, by this conductive pole, the electrical connection of sensing element is drawn, such that it is able to solve existing skill
" occur due to thin gold thread or welding easily to produce because of high vibration or quick pressures cycle in thin gold thread or weld in art
The problem of fatigue, and then initiating failure ".
Each technical characteristic of embodiment described above can arbitrarily be combined, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic applied in example is all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope of this specification record.
Embodiment described above only have expressed the several embodiments of the present invention, and its description is more concrete and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
Say, without departing from the inventive concept of the premise, some deformation can also be made and improve, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (16)
1. a kind of high-temp pressure sensor, including silicon substrate, the sensing element that is arranged on described silicon substrate it is characterised in that
Also include the intermediate made by high temperature resistant electrically non-conductive material that is arranged on described silicon substrate and be arranged on described centre
Upper strata silicon chip on substrate, described silicon substrate, intermediate and upper strata silicon chip are bonded successively, described silicon substrate and intermediate it
Between be formed with the cavity receiving described sensing element.
2. high-temp pressure sensor as claimed in claim 1 is it is characterised in that the thickness of described silicon substrate and upper strata silicon chip
Thickness is identical；Or, the thickness deviation scope of described silicon substrate and upper strata silicon chip is in ± 10um.
3. high-temp pressure sensor as claimed in claim 1 or 2 is it is characterised in that form on described high-temp pressure sensor
There are at least two through holes, each described through hole sequentially runs through intermediate and upper strata silicon chip, be formed with each described through hole and lead
Electric post, one end of described conductive pole is electrically connected with sensing element, and the other end is exposed on the silicon chip of described upper strata.
4. high-temp pressure sensor as claimed in claim 3 is it is characterised in that each described through hole includes running through described centre
First sub-through hole of substrate and the second sub-through hole running through described upper strata silicon chip；Described first sub-through hole and the shape of the second sub-through hole
Shape is identical, or the shape of described first sub-through hole and the second sub-through hole differs.
5. high-temp pressure sensor as claimed in claim 1 is it is characterised in that described intermediate is provided with opening towards institute
State the groove of silicon substrate, described cavity is closed the described groove in described intermediate by described silicon substrate and formed；Or, described
Silicon substrate is provided with opening towards the groove of described intermediate, and described cavity is closed on described silicon substrate by described intermediate
Described groove formed；Or, described intermediate is provided with opening towards the upper groove of described silicon substrate, on described silicon substrate
Offer opening towards the low groove of described intermediate, described low groove and upper groove are symmetrical arranged, and described cavity is by described
Low groove and upper groove enclose to set and are formed.
6. high-temp pressure sensor as claimed in claim 1 is it is characterised in that described sensing element is varistor or is based on
Capacitive sensitive diaphragm.
7. high-temp pressure sensor as claimed in claim 1 is it is characterised in that described intermediate is sheet glass.
8. a kind of manufacture method of high-temp pressure sensor is it is characterised in that comprise the steps：
S1：There is provided silicon substrate, described silicon substrate is disposed with body silicon layer, insulating barrier and body silicon thin film, described silicon from bottom to up
Substrate has the upper and lower surface being disposed opposite to each other；
S2：Sensing element and the metal electrode being electrically connected with described sensing element are formed on the upper surface of described silicon substrate；
S3：There is provided an intermediate made by high temperature resistant electrically non-conductive material, described intermediate has and is just disposed opposite to each other
Face and the back side, form groove on the back side of described intermediate；The back side of described intermediate and the upper table of described silicon substrate
Face is bonded, and sealed groove is to form the cavity of sealing sensing element；
S4：There is provided silicon chip, described silicon chip includes the top surface being disposed opposite to each other and bottom surface；By the bottom surface of described silicon chip and intermediate
Front is bonded；
S5：Draw metal electrode.
9. a kind of manufacture method of high-temp pressure sensor is it is characterised in that comprise the steps：
S1：There is provided silicon substrate, described silicon substrate is disposed with body silicon layer, insulating barrier and body silicon thin film, described silicon from bottom to up
Substrate has the upper and lower surface being disposed opposite to each other, and the upper surface of described silicon substrate is formed with low groove；
S2：Sensing element and the metal electrode being electrically connected with described sensing element are formed on the upper surface of described silicon substrate,
Described sensing element is located in described low groove；
S3：There is provided an intermediate made by high temperature resistant electrically non-conductive material, described intermediate has and is just disposed opposite to each other
Face and the back side, the back side of described intermediate is bonded with the upper surface of described silicon substrate, so that low groove is sealed quick to form sealing
The cavity of sensing unit；
S4：There is provided silicon chip, described silicon chip includes the top surface being disposed opposite to each other and bottom surface；By the bottom surface of described silicon chip and intermediate
Front is bonded；
S5：Draw metal electrode.
10. the manufacture method of high-temp pressure sensor as claimed in claim 8 or 9 is it is characterised in that the thickness of described silicon substrate
Degree is identical with the thickness of silicon chip；Or, the thickness deviation scope of described silicon substrate and silicon chip is in ± 10um.
The manufacture method of 11. high-temp pressure sensors as claimed in claim 10 is it is characterised in that described step S4 is also wrapped
Include：The front of the bottom surface of silicon chip and intermediate is carried out anode linkage, and silicon chip is carried out thinning make its thickness and silicon substrate
Thickness identical or make both thickness deviation scopes in ± 10um.
The manufacture method of 12. high-temp pressure sensors as claimed in claim 8 or 9 is it is characterised in that described step S3 is also wrapped
Include：First sub-through hole of the front and back of this intermediate of insertion is formed on described intermediate；When described intermediate
When being bonded with described silicon substrate, described metal electrode passes through the first sub-through hole and ft connection；
Described step S4 also includes：Described silicon chip forms the top surface of this silicon chip of insertion and the second sub-through hole of bottom surface, works as institute
When stating silicon chip and being bonded with intermediate, described first sub-through hole is connected with the second sub-through hole to form through hole；
Described step S5 is specially：In described through hole, injection metal paste is to draw metal electrode.
The manufacture method of 13. high-temp pressure sensors as claimed in claim 10 is it is characterised in that described step S3 is also wrapped
Include：First sub-through hole of the front and back of this intermediate of insertion is formed on described intermediate；When described intermediate
When being bonded with described silicon substrate, described metal electrode passes through the first sub-through hole and ft connection；
Described step S4 also includes：Described silicon chip forms the top surface of this silicon chip of insertion and the second sub-through hole of bottom surface, works as institute
When stating silicon chip and being bonded with intermediate, described first sub-through hole is connected with the second sub-through hole to form through hole；
Described step S5 is specially：In described through hole, injection metal paste is to draw metal electrode.
The manufacture method of 14. high-temp pressure sensors as claimed in claim 8 or 9 is it is characterised in that described step S2 is concrete
Including：
S21：Body silicon thin film on silicon substrate is carried out with dense boron doping, forms doped layer；Photoetching, quarter are carried out to described doped layer
Erosion, preparation constitutes varistor and the resistive layer of Wheatstone bridge；
S22：Metallic film deposition is passed through on described resistive layer and the method preparation of micro-nano technology forms metal electrode.
The manufacture method of 15. high-temp pressure sensors as claimed in claim 8 is it is characterised in that arrange on described silicon substrate
There is low groove, described low groove is symmetrical arranged with the groove of intermediate, in step s3, when described silicon substrate and intermediate
During bonding, described cavity is enclosed to set by the groove of low groove and intermediate and is formed.
The manufacture method of 16. high-temp pressure sensors as claimed in claim 8 or 9 it is characterised in that in described step S1 or
Also include in person's step S3：Remove the part body silicon layer being located at below sensing element, quick with the cavity and pressure that form silicon substrate
Sense film.
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