CN104062045B - A kind of piezoresistive pressure sensor and its manufacture method - Google Patents
A kind of piezoresistive pressure sensor and its manufacture method Download PDFInfo
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Abstract
A kind of piezoresistive pressure sensor and its manufacture method.The invention provides a kind of MEMS piezoresistive pressure sensor encapsulated based on anode linkage, described sensor has the first bonding bonding glass sandwich structure of glass, silicon-based second；The silicon substrate manufactures the diaphragm for spreading pressure drag with light boron by using surface micro-fabrication technology and body micro-processing technology and is used as piezoresistive pressure sensor structure, and carry out wafer level packaging using secondary anode bonding techniques, first time anode linkage uses silica glass anode linkage, and second of anode linkage solves the shortcomings of easily puncturing silicon face PN junction in traditional silica glass anodic bonding process and produce ionic soil using the encapsulation of amorphous silicon glass anode linkage technology；Pressure sensor structure of the present invention is novel, lightweight, small volume, stability are good, contamination resistance is strong, good reliability, has certain application prospect in fields such as Aero-Space, military affairs, automobile, environmental monitorings.
Description
(1) technical field
The present invention relates to the pressure sensor in MEMS (MEMS) sensor field and its manufacture method, specifically relate to
And a kind of MEMS piezoresistive pressure sensor encapsulated based on anode linkage and its manufacture method.
(2) background technology
MEMS pressure sensor is because small volume, light weight, cost are low, high reliability, in Aero-Space, environment
The fields such as monitoring, military affairs, automobile receive much concern, the Aero-Space especially having high requirements to device volume, quality and reliability
And weapons scientific domain has very big application prospect.MEMS piezoresistive pressure sensor volume is small, good linearity, measures the model of pressure
Enclose also wide, direct voltage output signal, compared to capacitance pressure transducer, it is not necessary to complicated circuit interface, produce in enormous quantities
When it is cheap, repeat productivity it is good, can the continuous pressure of direct measurement and steady state pressure.However, the complexity of application environment
One of the problem of mainly considering when badly causing the reliability of MEMS pressure sensor to be increasingly becoming device design, sensor is long
Phase stability and reliability are extremely important for device application.Based on this, it is necessary to invent a kind of MEMS piezoresistive pressure
Sensor chip, to ensure Stability and dependability of the pressure sensor in application.
(3) content of the invention
It is an object of the invention to provide a kind of based on anode linkage encapsulation technology, surface micro-fabrication, body micro fabrication
MEMS piezoresistive pressure sensor chip, to ensure reliability of the pressure sensor in application.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of MEMS piezoresistive pressure sensor encapsulated based on anode linkage, described sensor has the first bonding glass
Glass-bonding the glass sandwich structure of silicon substrate-the second；Described silicon substrate has been internally formed piezoresistive pressure sensor diaphragm, silicon substrate
Front be formed with the pressure drag region of piezoresistive pressure sensor, the pressure drag region of the piezoresistive pressure sensor is located at pressure drag
The upper surface of formula pressure sensor diaphragm, and the light boron diffusion pressure drag of light boron formation 4 is injected with, while light boron spreads pressure drag
Inside is injected with dense boron and forms dense boron ohmic contact regions, and the disposed thereon in the piezoresistive pressure sensor pressure drag region has dioxy
SiClx layer, silicon dioxide layer disposed thereon has silicon nitride layer, and described silicon dioxide layer and silicon nitride layer is blunt together as insulating
Change layer, described insulating passivation layer is provided with fairlead, pressure drag region, and piezoresistive pressure sensor are connected using plain conductor
4 light boron diffusion pressure drags in pressure drag region constitute Hui Sidun full-bridges by plain conductor and connected, the top of the insulating passivation layer
Deposition has non-crystalline silicon, and described non-crystalline silicon is bonded glass anode linkage with first；The front of the silicon substrate is also formed with dense boron and led
Metal pin is connected with above line, the dense boron wire, dense boron wire connects in working sensor area with metal pin, described
The back side of silicon substrate is bonded glass anode linkage with second, and the second described bonding glass carries passage, and described ventilation
Hole position is in the lower section of piezoresistive pressure sensor diaphragm.
MEMS piezoresistive pressure sensor of the present invention, preferably described silicon substrate is n-type (100) silicon chip；It is preferred that the insulation
The thickness of the non-crystalline silicon of the disposed thereon of passivation layer is 2~4 μm.
The operation principle of MEMS piezoresistive pressure sensor of the present invention is as follows：MEMS piezoresistive pressure sensor master of the present invention
Light boron after being adulterated based on boron on the piezoresistive characteristic of monocrystalline silicon, piezoresistive pressure sensor cantilever beam spreads pressure drag by power
After effect, resistivity changes, and can obtain being proportional to the electric signal output that power changes by Hui Sidun full-bridges, pass through measurement
Electric signal output just can know that the size of surveyed physical quantity.We inject boron to realize to n-type (100) crystal orientation silicon chip in the present invention
P-type pressure drag, the isolation of pressure drag is realized using PN junction, due to the anisotropy of the piezoresistance coefficient of pressure drag, the stress pair of different directions
Pressure drag has different influences, in order to increase sensitivity, MEMS piezoresistive pressure sensor piezoresistive regions of the present invention as far as possible
Domain light boron diffusion pressure drag arrangement mode be：Longitudinally along (1,1,0) crystal orientation direction of silicon substrate, (1, -1,0) laterally along silicon substrate
Crystal orientation directional spreding, longitudinal piezoresistance coefficient, horizontal piezoresistance coefficient are respectively 71.8, -66.3.
Piezoresistive pressure sensor of the present invention is designed using rectangular film, 4 light boron diffusion pressure drag parallel arrangements, is made full use of
There is horizontal piezoresistive effect, such piezoresistive pressure sensor bridge arm resistance to be evenly distributed, output linearity degree and uniformity compared with
Good advantage, certainly, according to different sensitivity needs, described light boron diffusion pressure drag can use different distribution modes.
4 light boron diffusion pressure drags of piezoresistive pressure sensor of the present invention connect and compose Hui Sidun full-bridges, also, pressure by plain conductor
A kind of connected mode of resistance pressure transducer metal pin is：First pin is connecing piezoresistive pressure sensor output just, and second
Pin is grounded, and three-prong connects piezoresistive pressure sensor output and born, and the 4th pin connects positive source.
Present invention also offers a kind of manufacture method of the piezoresistive pressure sensor encapsulated based on anode linkage,
Described manufacture method is carried out as follows：
A) silicon chip is taken as silicon substrate, twin polishing, cleaning, first double-sided deposition layer of silicon dioxide, then one layer of double-sided deposition
Silicon nitride；
B) positive dry etching silicon nitride, silica to silicon substrate top surface；
C) the long layer of silicon dioxide protective layer of positive hot oxygen, front photoresist goes out piezoresistive pressure sensor as mask lithography
Pressure drag region, be then injected into light boron, form light boron diffusion pressure drag, remove photoresist；
D) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron Europe by lithography in light boron diffusion pressure drag region
Nurse contact area, is then injected into dense boron, the dense boron wire formed inside silicon substrate, and is internally formed dense boron in light boron diffusion pressure drag
Ohmic contact regions, remove photoresist, annealing；
E) first double-sided deposition layer of silicon dioxide, then one layer of silicon nitride of double-sided deposition, positive silicon dioxide layer and nitridation
Silicon layer is together as insulating passivation layer；
F) front photoresist goes out a point runner region, dry process reaction ion etching (RIE) silicon nitride, titanium dioxide as mask lithography
Silicon exposes a point runner region silicon substrate to silicon substrate top surface；
G) one layer of non-crystalline silicon of front deposition, is directly contacted in point runner region non-crystalline silicon with silicon substrate；
H) front photoresist goes out working sensor region and metal pin regional graphics as mask lithography, and RIE etchings are non-
Crystal silicon removes photoresist to silicon nitride layer；
I) front photoresist goes out fairlead, dry method RIE etch silicon nitrides, silicon dioxide layer to silicon substrate top as mask lithography
Face, removes photoresist, forms fairlead；
J) front deposited metal conductor layer, front photoresist goes out plain conductor and metal pin figure as mask lithography, rotten
The metal without photoresist overlay area is lost, photoresist is removed, Alloying Treatment forms plain conductor and metal pin；
K) back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitrides, silica to silicon substrate bottom surface,
Remove photoresist；
L) silicon nitride, silicon dioxide layer make mask wet etching silicon substrate formation piezoresistive pressure sensor back of the body chamber；
M) the remaining silicon nitride of dry method RIE etched backsides, silica are to silicon substrate bottom surface, and the back side carries out si-glass anode
Bonding；
N) front carries out amorphous silicon-glass anodic bonding；
O) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry：First time scribing, is removed above metal pin
Glass；Structure in burst groove is scratched in second of scribing, separates one single chip, completes encapsulation.
In the manufacture method for the piezoresistive pressure sensor that the present invention is encapsulated based on anode linkage, step m), recommend the back side
Carry out silicon-glass anodic bonding technological parameter be：300~500V of voltage, 15~20mA of electric current, 300~400 DEG C of temperature, pressure
2000~3000N of power, 5~10min of time.
In the manufacture method for the piezoresistive pressure sensor that the present invention is encapsulated based on anode linkage, step n), recommend front
Carry out amorphous silicon-glass anodic bonding technological parameter be：450~1000V of voltage, 15~25mA of electric current, temperature 300~400
DEG C, 2000~3000N of pressure, 15~25min of time.
Anode linkage technology of the present invention is a kind of prior art, and the technology is well known to those skilled in the art
, its operation principle is：DC power anode is connect into silicon chip, negative pole connects sheet glass, due to performance of the glass under certain high temperature
Similar to electrolyte, and silicon chip, when temperature is increased to 300 DEG C~400 DEG C, resistivity will be down to 0.1 Ω because of intrinsic excitation
M, conducting particles (such as Na now in glass+) float to the glass surface of negative electrode under External Electrical Field, and close to silicon
The glass surface of piece leaves negative electrical charge, due to Na+Drift make to produce electric current flowing in circuit, close to the glass surface meeting of silicon chip
Form the space-charge region (or depletion layer) that one layer of very thin width is about several microns.Because depletion layer is negatively charged, silicon chip
It is positively charged, so there is larger electrostatic attraction between silicon chip and glass, it is in close contact both, and in bonding face hair
Raw physical-chemical reaction, forms the Si-O covalent bonds of strong bonded, silicon is securely attached together with glass interface.
According to described principle, anode linkage technology is not appropriate for using in being bonded of n-type silicon and glass of injection boron,
Reason is：The n-type silicon of injection boron is substantially a PN junction, and strong voltage is light while by silicon substrate in anodic bonding process
And easily lifting can just cause it to leak electricity its reverse breakdown, the electric property of device is destroyed.Exist near silicon on glass bonding face
When PN junction or other circuit structures more sensitive to high pressure ratio, 500~1500V high pressure easily punctures MEMS devices in bonding process
Circuit in part especially near bond area, influences the performance of device.
For problem present in above-mentioned existing anode linkage technology, second of bonding technology of the invention utilizes non-crystalline silicon
As the conductting layer between silicon substrate, glass, bonding current is passed through as far as possible along silicon-amorphous si-glass direction, make the PN
Knot avoids highfield, the anode linkage of upper strata non-crystalline silicon and glass is finally realized, it is demonstrated experimentally that this amorphous si-glass anode
Bonding still can guarantee that the bond strength and air-tightness close to si-glass.
The encapsulation of the piezoresistive pressure sensor encapsulated based on anode linkage is needed by anode linkage, first twice
Secondary bonding is back side silicon-glass anodic bonding, is relatively easily realized, second of bonding is the sun of front non-crystalline silicon and glass
Pole is bonded, relatively difficult, can suitably be strengthened being bonded voltage, be increased bonding time.In the present invention, non-crystalline silicon and glass are utilized
Glass bonding also has a very big advantage, and the bonding method avoids directly contacting for glass and silicon, has prevented original glass
The Na that glass may be produced with silicon bonding surface+The pollution of plasma.
In piezoresistive pressure sensor structure of the present invention, in the amorphous si-glass bonding process of front, by the use of non-crystalline silicon as
Step formation piezoresistive pressure sensor vacuum cavity, it is direct that this design makes the first bonding glass to carry out fluting processing
It can be just bonded, save bonding cost.In piezoresistive pressure sensor structure of the present invention, the thickness of vacuum cavity directly takes
Certainly in the thickness of amorphous silicon deposition, it can be all affected because amorphous silicon deposition obtains its blocked up consistency, adhesiveness, and can add
The difficulty of big lower step photoetching, so in order to avoid the glass in bonding process and nitridation Si direct bonding, while ensureing non-crystalline silicon
Amorphous silicon thickness in good performance, inventive sensor can take 2~4 μm.
The present invention is the MEMS piezoresistive pressure sensor encapsulated using anode linkage, and the sensor has the first bonding glass
Glass-silicon substrate-the second bonding glass sandwich structure, recommendations n-type (100) silicon chip makees silicon substrate, using surface micro-fabrication technology and
Pressure diaphragm of the body micro-processing technology manufacture with light boron diffusion pressure drag utilizes secondary anode as pressure sensor structure
Bonding techniques carry out wafer level packaging, and first time anode linkage uses silicon-glass anodic bonding, and second of anode linkage utilizes non-
Crystal silicon layer makes bonding current not by PN junction as intermediate layer, protects sensor PN junction, realizes amorphous silicon-glass anodic bonding.
Solved using the encapsulation of amorphous silicon-glass anodic bonding technology in traditional si-glass anodic bonding process and easily puncture silicon table
The shortcomings of face PN junction and generation ionic soil.Inventive sensor structure is novel, lightweight, small volume, stability are good, antipollution
Ability is strong, good reliability.Inventive sensor has certain application in fields such as Aero-Space, military affairs, automobile, environmental monitorings
Prospect.
(4) illustrate
Fig. 1 is the cross-sectional view of piezoresistive pressure sensor of the present invention；
Fig. 2 is the top view of piezoresistive pressure sensor of the present invention；
Fig. 3~Figure 17 is the manufacturing process flow diagrammatic cross-section of piezoresistive pressure sensor of the present invention：
Fig. 3 is double-sided deposition silica, the schematic diagram of silicon nitride layer；
Fig. 4 is positive dry etching silicon nitride, the schematic diagram of silica to silicon substrate top surface；
Fig. 5 is to form the schematic diagram that light boron spreads pressure drag；
Fig. 6 is the schematic diagram to form dense boron wire and dense boron ohmic contact regions；
Fig. 7 is the schematic diagram for being formed as insulating passivation layer；
Fig. 8 etches the schematic diagram of point runner region for front；
Fig. 9 is the schematic diagram of positive deposited amorphous silicon；
Figure 10 is the schematic diagram to form working sensor region and metal pin regional graphics；
The schematic diagram of Figure 11 formation fairleads；
Figure 12 is the schematic diagram to form plain conductor and metal pin；
Figure 13 is the schematic diagram that the back side forms corrosion silicon window；
Figure 14 is to form the schematic diagram that piezoresistive pressure sensor carries on the back chamber；
Figure 15 is the schematic diagram that the back side carries out silicon-glass anodic bonding；
Figure 16 carries out the schematic diagram of amorphous silicon-glass anodic bonding for front；
Figure 17 is the schematic diagram that scribing completes encapsulation.
In Fig. 1~Figure 17：Dense boron ohmic contact regions, the light boron diffusion pressure drags of 2-, 3- inside the light boron diffusion pressure drags of 1- are just
The silicon nitride in silicon dioxide layer, the silicon dioxide layer of 3 '-back side second, 4- fronts insulating passivation layer in the insulating passivation layer of face
Layer, the silicon nitride layer of 4 '-back side second, 5- plain conductors, 6- first bonding glass, 7- non-crystalline silicons, the dense boron wires of 8-, 9-
Metal pin, 10- silicon substrates, the bondings of 11- second glass, 12- passages, 13- piezoresistive pressure sensors diaphragm, 14- are just
Positive first silicon nitride layer of the silicon dioxide layer of face first, the silicon dioxide layer of 14 '-back side first, 15-, the nitrogen of 15 '-back side first
SiClx layer, 16- burst grooves, also, 9a~9d represents the first~the 4th pin successively in Fig. 2；
Figure 18 is the pin definitions of piezoresistive pressure sensor of the present invention；
Pin definitions in Figure 18：1. the-the first pin connect piezoresistive pressure sensor output just, 2. the-the second pin ground connection,
3. the-the three-prong connect piezoresistive pressure sensor output it is negative, 4. the-the four pin connect positive source；In figure, 17- pressure drags.
(5) embodiment
Below in conjunction with accompanying drawing, the invention will be further described, but protection scope of the present invention is not limited to that.
As shown in figure 1, piezoresistive pressure sensor of the present invention, employs the first bonding glass-silicon base-the second bonding glass
Sandwich structure, described sensor main will include：Silicon substrate (10), the pressure drag type pressure biography for measuring pressure (Fluid pressure)
Sensor diaphragm (13), dense boron wire (8), metal pin (9), carry out with silicon substrate (10) anode linkage second be bonded glass (11)
And it is bonded glass (6) with the first of non-crystalline silicon (7) progress anode linkage.
Wherein, the upper surface of the piezoresistive pressure sensor diaphragm (13) for measuring pressure (Fluid pressure) is filled with light
Boron spreads pressure drag (2) as the light boron of piezoresistive pressure sensor, and injects dense boron inside light boron diffusion pressure drag and form dense boron
Ohmic contact regions (1), the pressure drag region disposed thereon of piezoresistive pressure sensor has silicon dioxide layer (3) and silicon nitride layer (4)
As insulating passivation layer, fairlead is provided with insulating passivation layer and plain conductor (5) connection pressure drag region is utilized.Pressure drag type pressure
The pressure drag region of sensor includes 4 light boron diffusion pressure drags, and 4 light boron diffusion pressure drag parallel arrangements simultaneously pass through plain conductor (5)
The connection of Hui Sidun full-bridges is constituted, after having one perpendicular to the pressure of device surface, the deformation of piezoresistive pressure sensor diaphragm,
Pressure drag positioned at piezoresistive pressure sensor diaphragm upper surface is acted on by power, and resistivity changes, pressure drag as shown in Figure 2
Formula pressure sensor diaphragm upper surface two pressure drags in centre and two, outside pressure drag are located at two of Hui Sidun full-bridges to bridge respectively,
It can obtain being proportional to the electric signal output that power changes by Hui Sidun full-bridges, just can know that by measuring electric signal output and surveyed
The size of pressure.Using the design of Hui Sidun full-bridges improve in the present invention sensitivity of piezoresistive pressure sensor part and
It can guarantee that good linear.
The encapsulation of chip uses secondary anode bonding techniques.First time anode linkage is the bonding glass of chip back second
(11) with the silicon-glass anodic bonding of silicon substrate (10)；Second of anode linkage makes bonding electricity using amorphous silicon layer as intermediate layer
Stream protects sensor PN junction, realizes front non-crystalline silicon (7) and the first anode linkage for being bonded glass (6), second not by PN junction
The reason for secondary anode linkage is not using silicon on glass bonding is：PN junction, key are there is on silicon-glass anodic bonding bonding face
Strong voltage during conjunction easily punctures PN junction, destroys the electric property of circuit.
In order to avoid non-crystalline silicon (7) is bonded the irregularities of glass (6) bonding face with first, it is ensured that the air-tightness of encapsulation,
Described piezoresistive pressure sensor does not connect chip operation area and metal pin using plain conductor, but utilizes dense boron
Working sensor area is connected by wire (8) as inner lead with metal pin.
As shown in Fig. 3~Figure 17, the manufacture of the piezoresistive pressure sensor of the present invention encapsulated based on anode linkage
Technique comprises the following steps：
A) as shown in Figure 3：Take silicon chip as silicon substrate (10), twin polishing is cleaned, first one layer of 0.8 μ m-thick of double-sided deposition
Silicon dioxide layer (14), (14 '), then one layer of 0.2 μ m-thick of double-sided deposition silicon nitride layer (15), (15 ')；Described silicon chip is n
Type (100) silicon chip；
B) as shown in Figure 4：Positive dry etching silicon nitride (15), silica (14) to silicon substrate (10) top surface；
C) as shown in Figure 5：Silica thick front one layer of 80nm of hot oxygen length is used as preflood protective layer, positive photoetching
Glue goes out the pressure drag region of piezoresistive pressure sensor as mask lithography, then carries out boron ion injection (light boron), forms light boron and expands
Pressure drag (2) is dissipated, photoresist is removed；
D) as shown in Figure 6：Front photoresist goes out dense boron conductor area as mask lithography, and spreads pressure drag (2) area in light boron
Domain makes dense boron ohmic contact regions by lithography, then carries out boron ion injection (dense boron), forms dense boron wire (8), and in light boron
Diffusion pressure drag (2) is internally formed dense boron ohmic contact regions (1), removes photoresist, annealing；
E) as shown in Figure 7：The silicon dioxide layer (3) of first one layer of 0.2 μ m-thick of double-sided deposition, (3 '), then one layer of double-sided deposition
The silicon nitride layer (4) of 0.2 μ m-thick, (4 '), positive silicon dioxide layer (3) and silicon nitride layer (4) are together as insulating passivation layer；
F) as shown in Figure 8：Front photoresist goes out a point runner region, dry method RIE etch silicon nitrides (4), two as mask lithography
Silica (3) exposes a point runner region silicon substrate to silicon substrate (10) top surface；
G) as shown in Figure 9：The amorphous silicon layer (7) of front one layer of 3 μ m-thick of deposition, in point runner region non-crystalline silicon (7) and a silicon
Base (10) is directly contacted；
H) as shown in Figure 10：Front photoresist goes out working sensor region and metal pin (6) region as mask lithography
Figure, RIE etching non-crystalline silicons (7) to silicon nitride layer (4) remove photoresist；
I) as shown in figure 11：Front photoresist goes out fairlead, dry method RIE etch silicon nitrides (4), titanium dioxide as mask lithography
Silicon (3) removes photoresist to silicon substrate (10) top surface, forms fairlead；
J) as shown in figure 12：The aluminium of one layer of 1 μ m-thick of front magnetron sputtering, front photoresist goes out metallic aluminium as mask lithography leads
Line (5) and metal pin (9) figure, corrode the aluminium without photoresist overlay area, remove photoresist, and Alloying Treatment is formed
Metal aluminum conductor (5) and metal pin (9)；
K) as shown in figure 13：Back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitrides (4 '),
(15 '), silica (3 '), (14 ') to silicon substrate (10) bottom surface remove photoresist；
L) as shown in figure 14：Silicon nitride (4 '), (15 '), silicon dioxide layer (3 '), (14 ') make mask, 40wt%KOH water
Solution wet etching silicon substrate (10) formation piezoresistive pressure sensor back side cavity；
M) as shown in figure 15：The remaining silicon nitride (4 ') of dry method RIE etched backsides, (15 '), silica (3 '), (14 ')
To silicon substrate (10) bottom surface, the back side carries out silicon-glass anodic bonding；
N) as shown in figure 16：Front carries out amorphous silicon-glass anodic bonding；
O) as shown in figure 17：Scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry：First time scribing, removes gold
Belong to glass (6) above pin (9)；Structure in burst groove is scratched in second of scribing, separates one single chip, completes encapsulation.
Further, in order to ensure the quality of anode linkage twice, by test of many times, The present invention gives the pressure drag
The optimal bonding parameter of formula pressure sensor, such as table 1, shown in 2.
Table 1 first time anode linkage (si-glass) parameter
Second of the anode linkage of table 2 (amorphous si-glass) parameter
It should be noted that the cantilever beam structure size, pressure drag number, pressure drag size of the present invention not to Sensor section
The parameters such as size and arranged distribution are defined, and also the technological parameter of manufacturing process of the present invention are not defined, and the implementation
Example is only illustrative, and any restriction is not done to the present invention.
Claims (9)
1. a kind of MEMS piezoresistive pressure sensor encapsulated based on anode linkage, it is characterised in that described sensor has the
One bonding glass-silicon base-the second is bonded glass sandwich structure；Described silicon substrate has been internally formed piezoresistive pressure sensor diaphragm
Film, the front of silicon substrate is formed with the pressure drag region of piezoresistive pressure sensor, the pressure drag region of the piezoresistive pressure sensor
Positioned at the upper surface of piezoresistive pressure sensor diaphragm, and the light boron diffusion pressure drag of light boron formation 4 is injected with, while light boron expands
The inside of scattered pressure drag is injected with dense boron and forms dense boron ohmic contact regions, and the top in the piezoresistive pressure sensor pressure drag region sinks
Product has silicon dioxide layer, and silicon dioxide layer disposed thereon has silicon nitride layer, and described silicon dioxide layer and silicon nitride layer one is acted as
For insulating passivation layer, described insulating passivation layer is provided with fairlead, and pressure drag region, and pressure resistance type pressure are connected using plain conductor
4 light boron diffusion pressure drags in force snesor pressure drag region constitute Hui Sidun full-bridges by plain conductor and connected, the insulation passivation
The disposed thereon of layer has non-crystalline silicon, and described non-crystalline silicon is bonded glass anode linkage with first；The front of the silicon substrate is also formed
Have and metal pin is connected with above dense boron wire, the dense boron wire, dense boron wire is by working sensor area and metal pin
Connection, the back side of the silicon substrate is bonded glass anode linkage with second, and the second described bonding glass carries passage, and institute
The passage stated is located at the lower section of piezoresistive pressure sensor diaphragm.
2. the MEMS piezoresistive pressure sensor as claimed in claim 1 encapsulated based on anode linkage, it is characterised in that described
Piezoresistive pressure sensor pressure drag region light boron diffusion pressure drag arrangement mode be：(1,1,0) crystal orientation of longitudinal direction along silicon substrate
Direction, (1, -1,0) crystal orientation directional spreding laterally along silicon substrate, longitudinal piezoresistance coefficient, horizontal piezoresistance coefficient be respectively 71.8, -
66.3。
3. the MEMS piezoresistive pressure sensor as claimed in claim 1 encapsulated based on anode linkage, it is characterised in that described
Piezoresistive pressure sensor designed using rectangular film, 4 of piezoresistive pressure sensor pressure drag region light boron diffusion pressure drags are put down
Row arrangement.
4. the MEMS piezoresistive pressure sensor as claimed in claim 1 encapsulated based on anode linkage, it is characterised in that described
Metal pin have 4, the first pin connects that piezoresistive pressure sensor output is negative, and the second pin ground connection, three-prong connects pressure drag
Formula pressure sensor is exported just, and the 4th pin connects positive source.
5. the MEMS piezoresistive pressure sensor encapsulated based on anode linkage as described in any one of Claims 1 to 4, its feature
It is n-type (100) silicon chip to be described silicon substrate.
6. the MEMS piezoresistive pressure sensor encapsulated based on anode linkage as described in any one of Claims 1 to 4, its feature
The thickness for being the non-crystalline silicon of described insulating passivation layer disposed thereon is 2~4 μm.
7. the manufacture method of the MEMS piezoresistive pressure sensor as claimed in claim 1 encapsulated based on anode linkage, it is special
Levy and be that described manufacture method is carried out as follows：
A) silicon chip is taken as silicon substrate, twin polishing, cleaning, first double-sided deposition layer of silicon dioxide, then one layer of nitridation of double-sided deposition
Silicon；
B) positive dry etching silicon nitride, silica to silicon substrate top surface；
C) the long layer of silicon dioxide protective layer of positive hot oxygen, front photoresist goes out the pressure of piezoresistive pressure sensor as mask lithography
Region is hindered, light boron is then injected into, light boron diffusion pressure drag is formed, removes photoresist；
D) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron ohm by lithography in light boron diffusion pressure drag region and connect
Region is touched, dense boron is then injected into, the dense boron wire formed inside silicon substrate, and it is internally formed dense boron ohm in light boron diffusion pressure drag
Contact zone, removes photoresist, annealing；
E) first double-sided deposition layer of silicon dioxide, then one layer of silicon nitride of double-sided deposition, positive silicon dioxide layer and silicon nitride layer
Together as insulating passivation layer；
F) front photoresist goes out a point runner region as mask lithography, dry method RIE etch silicon nitrides, silica to silicon substrate top surface,
Expose a point runner region silicon substrate；
G) one layer of non-crystalline silicon of front deposition, is directly contacted in point runner region non-crystalline silicon with silicon substrate；
H) front photoresist goes out working sensor region and metal pin regional graphics, RIE etching non-crystalline silicons as mask lithography
To silicon nitride layer, photoresist is removed；
I) front photoresist goes out fairlead as mask lithography, and dry method RIE etch silicon nitrides, silicon dioxide layer are gone to silicon substrate top surface
Except photoresist, fairlead is formed；
J) front deposited metal conductor layer, front photoresist goes out plain conductor and metal pin figure as mask lithography, and corrosion does not have
There is the metal of photoresist overlay area, remove photoresist, Alloying Treatment forms plain conductor and metal pin；
K) back side photoresist goes out to corrode silicon window as mask lithography, and RIE etch silicon nitrides, silica to silicon substrate bottom surface are removed
Photoresist；
L) silicon nitride, silicon dioxide layer make mask wet etching silicon substrate formation piezoresistive pressure sensor back of the body chamber；
M) the remaining silicon nitride of dry method RIE etched backsides, silica are to silicon substrate bottom surface, and the back side carries out silicon-glass anodic bonding；
N) front carries out amorphous silicon-glass anodic bonding；
O) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry：First time scribing, removes glass above metal pin；
Structure in burst groove is scratched in second of scribing, separates one single chip, completes encapsulation.
8. the manufacture method of the MEMS piezoresistive pressure sensor as claimed in claim 7 encapsulated based on anode linkage, it is special
Levy and be that the technological parameter that the back side carries out silicon-glass anodic bonding in step m) is：300~500V of voltage, 15~20mA of electric current,
300~400 DEG C of temperature, 2000~3000N of pressure, 5~10min of time.
9. the manufacture method of the MEMS piezoresistive pressure sensor as claimed in claim 7 encapsulated based on anode linkage, it is special
Levy and be that the technological parameter that front carries out amorphous silicon-glass anodic bonding in step n) is：450~1000V of voltage, electric current 15~
25mA, 300~400 DEG C of temperature, 2000~3000N of pressure, 15~25min of time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410264486.XA CN104062045B (en) | 2014-06-13 | 2014-06-13 | A kind of piezoresistive pressure sensor and its manufacture method |
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| CN104266781A (en) * | 2014-10-09 | 2015-01-07 | 苏州敏芯微电子技术有限公司 | Piezoresistive pressure sensor and manufacturing method thereof |
| CN104330196B (en) * | 2014-11-28 | 2017-02-22 | 杭州士兰集成电路有限公司 | Cavity film piezoresistive pressure sensor and manufacturing method thereof |
| CN104614117A (en) * | 2015-01-15 | 2015-05-13 | 北京大学 | Piezoresistive pressure meter chip structure and preparation method thereof |
| CN104776951B (en) * | 2015-03-30 | 2017-06-20 | 中国电子科技集团公司第三十八研究所 | A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof |
| CN104907568B (en) * | 2015-06-25 | 2017-01-11 | 武汉大学 | Piezoresistive thick film pressure sensor manufacturing method based on femtosecond laser composite technology |
| CN105021328B (en) * | 2015-07-13 | 2019-01-18 | 厦门大学 | The compatible piezoresistive pressure sensor and preparation method thereof of CMOS technology |
| CN105241369B (en) * | 2015-08-17 | 2018-02-09 | 王文 | A kind of MEMS strain gauges chip and its manufacturing process |
| CN107827077B (en) * | 2017-09-21 | 2024-06-21 | 广东电网有限责任公司惠州供电局 | Piezoresistive MEMS temperature sensor and manufacturing method thereof |
| CN108801535B (en) * | 2018-05-29 | 2020-11-13 | 浙江大学 | Self-packaging method of sheet-shaped flexible piezoresistive sensor |
| CN109037049B (en) * | 2018-07-30 | 2020-09-15 | 中国电子科技集团公司第四十九研究所 | Method for completely removing metal layer between wafer-level SOI material and glass electrostatic bonding surface |
| CN109342836B (en) * | 2018-10-24 | 2021-03-26 | 清华大学 | Production process based on piezoelectric piezoresistive broadband high-field-intensity miniature electric field sensor |
| CN111141429A (en) * | 2019-12-23 | 2020-05-12 | 陕西电器研究所 | Vacuum-packaged sputtering film pressure sensitive element |
| CN112284578B (en) * | 2020-12-30 | 2021-03-12 | 东南大学 | MEMS pressure sensor and preparation method thereof |
| CN115144122B (en) * | 2022-08-31 | 2022-11-18 | 南京元感微电子有限公司 | High-temperature-resistant pressure sensor with multilayer structure and processing method thereof |
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