CN104089642B - Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor - Google Patents
Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor Download PDFInfo
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- CN104089642B CN104089642B CN201410265336.0A CN201410265336A CN104089642B CN 104089642 B CN104089642 B CN 104089642B CN 201410265336 A CN201410265336 A CN 201410265336A CN 104089642 B CN104089642 B CN 104089642B
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Abstract
The invention provides a piezoresistive acceleration and pressure integrated sensor based on anodic bonding and packaging and a method for manufacturing the piezoresistive acceleration and pressure integrated sensor. The piezoresistive acceleration and pressure integrated sensor integrates a piezoresistive acceleration sensor and a piezoresistive pressure sensor and is provided with a first bonding glass-silicon substrate-second bonding glass type sandwich structure. The piezoresistive acceleration and pressure integrated sensor is novel in structure, low in weight, small in size, high in stability, and high in anti-pollution capacity. In addition, according to the piezoresistive acceleration and pressure integrated sensor and the method for manufacturing the piezoresistive acceleration and pressure integrated sensor, the same technology is applied to the same chip, the pressure measurement capacity and the acceleration measurement capacity are achieved through different kinds of design, and the technological processes are simple and easy to implement. The piezoresistive acceleration and pressure integrated sensor has a certain application prospect in the fields such as the aviation field, the military field, the automobile field and the environment monitoring field.
Description
(1) technical field
The present invention relates to piezoresistance type acceleration, pressure integrated sensor in MEMS (MEMS) sensor field and
Its manufacture method, and in particular to it is a kind of based on anode linkage encapsulate MEMS piezoresistive acceleration, pressure integrated sensor and its
Manufacture method.
(2) background technology
In the fields such as Aero-Space, military affairs, automobile, environmental monitoring, Jing often will simultaneously measure the ginseng such as acceleration, pressure
Number.But in such applications, due to the strict restriction of environmental suitability, volume, cost and function etc., it is desirable to which sensor has micro-
Type, integrated, multi-functional feature.Integrated sensor can integrated multiple different sensors on the same chip, to
Different physical quantitys is detected simultaneously, and small volume, unit cost are low, have extensive potential application in above-mentioned field
Prospect, therefore suffers from increasing concern both at home and abroad.But compare with integrated circuit, the integrated of sensor seems more tired
Difficulty, reason is that the operation principle of different sensors and organization plan difference are very big, and from operation principle, some sensors are electricity
Resistance sensitivity principle, some sensors are capacitance-sensitive principles；From from organization plan, some need the special constructions such as film, have
It is a little then need special sensitive material.Therefore the sensor of these different principles and structure is carried out into Integrated manufacture, needs research
A set of specific process.
(3) content of the invention
It is an object of the invention to provide a kind of be based on anode linkage encapsulation technology, surface micro-fabrication, body micro fabrication
Piezoresistance type acceleration, pressure integrated sensor and its manufacture method, realize directly that two kinds of sensors are enterprising in a disk
Row Integrated manufacture.
For achieving the above object, the technical solution used in the present invention is：
A kind of piezoresistance type acceleration, pressure integrated sensor, described sensor is integrated with piezoresistance type acceleration biography simultaneously
Sensor and piezoresistive pressure sensor, and it is bonded glass sandwich structure with the first bonding glass-silicon base-the second；It is described
Silicon substrate be internally formed piezoresistance type acceleration sensor cantilever beam and piezoresistive pressure sensor diaphragm, the front of silicon substrate is formed
There are two pressure drag regions, be respectively the pressure drag region and the piezoresistive regions of piezoresistive pressure sensor of piezoresistance type acceleration sensor
Domain；The pressure drag region of the piezoresistance type acceleration sensor is located at the upper surface root of piezoresistance type acceleration sensor cantilever beam,
And it is injected with light boron and forms 4 light boron diffusion pressure drags, while the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron Europe
Nurse contact zone；The pressure drag region of the piezoresistive pressure sensor is located at the upper surface of piezoresistive pressure sensor diaphragm, also notes
Enter to have light boron to form 4 light boron and spread pressure drag, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron Ohmic contact
Area；The disposed thereon in two described pressure drag regions has silicon dioxide layer, and silicon dioxide layer disposed thereon has the first silicon nitride layer,
, together as insulating passivation layer, described insulating passivation layer is provided with fairlead for described silicon dioxide layer and the first silicon nitride layer,
Two pressure drag regions are connected using plain conductor, and 4 light boron in piezoresistance type acceleration sensor pressure drag region spread pressure drag
The connection of Hui Sidun full-bridges is constituted by plain conductor, 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region pass through
Plain conductor also constitutes the connection of Hui Sidun full-bridges；The disposed thereon of the plain conductor has the second silicon nitride layer, second nitrogen
The disposed thereon of SiClx layer has amorphous silicon layer, and described non-crystalline silicon is bonded glass anode linkage with first, also, utilizes non-crystalline silicon
Used as step, described non-crystalline silicon is bonded after glass bonding with first and forms a vacuum cavity, and connection piezoresistance type acceleration is passed
Sensor and piezoresistive pressure sensor；The back side of the silicon substrate is bonded glass anode linkage, the second described bonding glass with second
Glass carries passage, and described passage is located at the lower section of piezoresistive pressure sensor diaphragm；The front of the silicon substrate is also
Dense boron wire is formed with, metal pin is connected with above the dense boron wire, dense boron wire is by working sensor area and metal
Pin is connected.
Piezoresistance type acceleration of the present invention, pressure integrated sensor, preferably described silicon substrate is N-shaped (100) silicon chip；It is preferred that institute
The thickness for stating the non-crystalline silicon of the disposed thereon of the second silicon nitride layer is 2～4 μm.
Piezoresistance type acceleration of the present invention, pressure integrated sensor operation principle it is as follows：MEMS piezoresistive of the present invention accelerates
Degree, pressure integrated sensor be based primarily upon boron doping after monocrystalline silicon piezoresistive characteristic, piezoresistance type acceleration sensor cantilever beam and
Pressure drag on piezoresistive pressure sensor diaphragm is subject to after the effect of power, and resistivity changes, can be with by Hui Sidun full-bridges
Obtain being proportional to the electric signal output of power change, the size of surveyed physical quantity is just can know that by measuring electric signal output.This
We inject boron to realize p-type pressure drag to N-shaped (100) crystal orientation silicon chip in bright, and using PN junction the electricity isolation of pressure drag is realized, due to
The anisotropy of the piezoresistance coefficient of pressure drag, the stress of different directions has different impacts to pressure drag, in order to as increase sensitive as possible
Degree, the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region of the present invention and piezoresistive pressure sensor pressure drag
The light boron in region spreads the arrangement mode of pressure drag：Longitudinal direction along silicon substrate (1,1,0) crystal orientation direction, laterally along silicon substrate (1, -1,
0) crystal orientation directional spreding, longitudinal piezoresistance coefficient, horizontal piezoresistance coefficient are respectively 71.8, -66.3.
Piezoresistance type acceleration sensor of the present invention is designed for double cantilever beam, piezoresistance type acceleration sensor piezoresistive regions
The light boron diffusion pressure drag in domain is 4 groups, is made up of two parallel light boron diffusion pressure drags per group, and two groups spread pressure drag to the light boron of bridge arm
The region of stress concentration of cantilever beam upper surface root is symmetrically distributed in, in addition two groups of light boron diffusion pressure drags are symmetrically distributed in zero stress
Area.Certainly, need to adopt different cantilever beam structures according to different sensitivity, such as monolateral single-beam, bilateral twin beams, double
Bian Siliang, four Bian Siliang, the beam of four side eight etc..Also, described light boron diffusion pressure drag can also adopt different distribution modes, 4
Group light boron diffusion pressure drag (can be 4, it is also possible to 8 folding types etc.) connects and composes Hui Sidun full-bridges by plain conductor, this
A kind of connected mode of invention piezoresistance type acceleration sensor metal pin is：4th pin connects positive source, in the present invention
Piezoresistive pressure sensor is shared, and the 5th pin connects piezoresistance type acceleration sensor output and bears, the 6th pin ground connection, the 7th pin
Connect piezoresistance type acceleration sensor to export just.
Piezoresistive pressure sensor of the present invention is designed using rectangular film, and 4 light boron spread pressure drag parallel arrangement, make full use of
There is horizontal piezoresistive effect, such piezoresistive pressure sensor bridge arm resistance to be evenly distributed, output linearity degree and uniformity compared with
Good advantage, certainly, according to different sensitivity needs, described light boron diffusion pressure drag can adopt different distribution modes.
4 light boron diffusion pressure drags of piezoresistive pressure sensor of the present invention connect and compose Hui Sidun full-bridges by plain conductor, also, press
A kind of connected mode of resistance pressure transducer metal pin is：First pin connects piezoresistive pressure sensor and exports just, and second
Pin is grounded, and three-prong connects piezoresistive pressure sensor output and bears, and the 4th pin connects positive source, with pressure resistance type in the present invention
Acceleration transducer shares positive source.
Present invention also offers the piezoresistance type acceleration, the manufacture method of pressure integrated sensor, described manufacturer
Method comprises the steps：
A) in the long layer of silicon dioxide protective layer of the hot oxygen in silicon substrate front, front photoresist goes out pressure resistance type and accelerates as mask lithography
The pressure drag region of degree sensor and the pressure drag region of piezoresistive pressure sensor, it is then light in two pressure drag region injections respectively
Boron, forms light boron and spreads pressure drag, removes photoresist；
B) front photoresist makees mask and makes concentrated boron area domain by lithography in light boron diffusion pressure drag region, dense boron is then injected into, light
Boron diffusion pressure drag is internally formed dense boron ohmic contact regions, removes photoresist, annealing；
C) first double-sided deposition silicon dioxide layer, then double-sided deposition silicon nitride layer, positive silicon dioxide layer and silicon nitride layer
Together as insulating passivation layer, front photoresist goes out fairlead as mask lithography, and dry method RIE etches insulating passivation layer to silicon substrate top
Face, removes photoresist, forms fairlead；
D) front deposited metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion does not have
There is the metal of photoresist overlay area, remove photoresist, Alloying Treatment forms plain conductor and metal pin；
E) front deposits one layer of silicon nitride and covers plain conductor, the isolation external world and circuit, and front photoresist makees mask lithography
Go out burst groove figure, dry method RIE etch nitride silicon layer, silicon dioxide layer to silicon substrate top surface remove photoresist；
F) front deposits one layer of non-crystalline silicon, in point runner region non-crystalline silicon and silicon substrate top surface directly contact；
G) front photoresist goes out working sensor region and metal pin regional graphics as mask lithography, and RIE etchings are non-
Crystal silicon removes photoresist to silicon nitride layer；
H) front photoresist goes out metal pin regional graphics as mask lithography, and RIE etch silicon nitrides are gone to metal pin layer
Except photoresist；
I) back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitrides, silica to silicon substrate bottom surface,
Photoresist is removed, silicon nitride layer, silicon dioxide layer make mask wet etching silicon substrate and form piezoresistance type acceleration sensor, pressure resistance type
Pressure sensor film；
J), to silicon substrate bottom surface, the back side carries out si-glass anode for the remaining silicon nitride of dry method RIE etched backside, silica
Bonding；
K) front photoresist goes out cantilever beam release profiles as mask lithography, and DRIE cuts through silicon nitride, silica, silicon substrate shape
Into the cantilever beam structure of piezoresistance type acceleration sensor, photoresist is removed, front carries out amorphous silicon-glass anodic bonding；
L) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry, first time scribing, removes metal pin top
Structure in burst groove is scratched in glass, second scribing, separates one single chip, completes encapsulation.
The manufacture method of piezoresistance type acceleration of the present invention, pressure integrated sensor, in step j), recommends the back side to enter
The technological parameter of row silicon-glass anodic bonding is：300～500V of voltage, 15～20mA of electric current, 300～400 DEG C of temperature, pressure
2000～3000N, 5～10min of time.
The manufacture method of piezoresistance type acceleration of the present invention, pressure integrated sensor, in step k), recommends front to enter
The technological parameter of row amorphous silicon-glass anodic bonding is：450～1000V of voltage, 15～25mA of electric current, 300～400 DEG C of temperature,
2000～3000N of pressure, 15～25min of time.
Anode linkage technology of the present invention is a kind of prior art, and the technology is well known to those skilled in the art
, its operation principle is：DC power anode is connect into silicon chip, negative pole connects sheet glass, due to performance of the glass under certain high temperature
Similar to electrolyte, and silicon chip, when temperature is increased to 300 DEG C～400 DEG C, resistivity will be down to 0.1 Ω because of intrinsic excitation
M, now the conducting particles in glass is (such as Na+) glass surface of negative electrode is floated under External Electrical Field, and close to silicon
The glass surface of piece leaves negative electrical charge, due to Na+Drift make to produce electric current flowing in circuit, close to the glass surface meeting of silicon chip
Form the space-charge region (or claiming depletion layer) that one layer of very thin width is about several microns.Due to depletion layer it is negatively charged, silicon chip
It is positively charged, so there is larger electrostatic attraction between silicon chip and glass, it is in close contact both, and send out in bonding face
Raw physical-chemical reaction, forms the Si-O covalent bonds of strong bonded, and silicon is securely attached together with glass interface.According to institute
The principle stated, anode linkage technology is not appropriate for used in being bonded of n-type silicon and glass of injection boron, and reason is：Injection
The n-type silicon of boron is substantially PN junction, and strong voltage can be by while by silicon substrate in anodic bonding process
Its reverse breakdown, causes it to leak electricity, and destroys the electric property of device.There is PN junction near silicon on glass bonding face or other are right
During the more sensitive circuit structure of high pressure ratio, the high pressure of 500～1500V easily punctures in MEMS especially key in bonding process
The circuit of areas adjacent is closed, the performance of device is affected.
For problem present in above-mentioned existing anode linkage technology, second bonding technology of the invention utilizes non-crystalline silicon
As the conductting layer between silicon substrate, glass, bonding current is passed through along silicon-amorphous si-glass direction as far as possible, effectively make institute
State PN junction and avoid highfield, finally realize the anode linkage of upper strata non-crystalline silicon and glass, it is demonstrated experimentally that this amorphous si-glass
Anode linkage still can guarantee that the bond strength and air-tightness of close si-glass.The MEMS pressures encapsulated based on anode linkage
Resistive acceleration, the encapsulation of pressure integrated sensor are needed through anode linkage twice, and for the first time bonding is back side si-glass sun
Pole is bonded, and relatively easily realizes, second bonding is the anode linkage of front non-crystalline silicon and glass, relatively difficult,
Strong bonding voltage can suitably be added, increase bonding time.In the present invention, using non-crystalline silicon be bonded with glass also have one it is very big
Advantage, the bonding method avoids the directly contact of glass and silicon, and having prevented original glass may with silicon bonding surface
The Na of generation+The pollution of plasma.
In MEMS piezoresistive acceleration of the present invention, pressure integrated sensor structure, front amorphous si-glass bonding process
In, form a vacuum cavity by the use of non-crystalline silicon as step to connect piezoresistance type acceleration sensor and pressure drag type pressure biography
Sensor.Described non-crystalline silicon is used as step, and two sensors share the method for designing of a vacuum chamber and have two to show very much
The advantage of work：(1) bond area between two sensors is eliminated, piezoresistance type acceleration of the present invention, pressure is reduced integrated
The volume of sensor, reduces the cost of one single chip；(2) first bonding glass need not carry out fluting processing directly just can be entered
Line unit is closed.In MEMS piezoresistive acceleration of the present invention, pressure integrated sensor structure, the thickness of upper vacuum cavity is directly depended on
The thickness of amorphous silicon deposition, can all be affected, and can increase down because amorphous silicon deposition obtains blocked up its consistency, adhesiveness
The difficulty of step photoetching, so in order to avoid the glass in bonding process and nitridation Si direct bonding, while ensureing that non-crystalline silicon is good
Performance, the amorphous silicon thickness in inventive sensor can take 2～4 μm.
The present invention is MEMS piezoresistive acceleration, the pressure integrated sensor using anode linkage encapsulation, and the sensor is same
When be integrated with piezoresistance type acceleration sensor and piezoresistive pressure sensor, recommendation n-type silicon chip (100) makees silicon substrate, using table
Face micro-processing technology spreads the cantilever beam of pressure drag, diaphragm and accelerates respectively as pressure resistance type with the manufacture of body micro-processing technology with light boron
Degree sensor, piezoresistive pressure sensor structure, and wafer level packaging is carried out using secondary anode bonding techniques, it is positive for the first time
Pole bonding adopts silicon-glass anodic bonding, second anode linkage to make bonding current obstructed as intermediate layer by the use of amorphous silicon layer
PN junction is crossed, sensor PN junction is protected, amorphous silicon-glass anodic bonding is realized.Using the envelope of amorphous silicon-glass anodic bonding technology
Dress solves the shortcomings of easily puncturing silicon face PN junction in traditional si-glass anodic bonding process and produce ionic soil.This
Bright piezoresistance type acceleration, pressure integrated sensor structure are novel, lightweight, small volume, good stability, contamination resistance are strong.This
Outward, in the present invention, use identical technique on same chip, different design come realize pressure measxurement and acceleration analysis this
Two kinds of abilities, technological process is simple.Inventive sensor has in fields such as Aero-Space, military affairs, automobile, environmental monitorings
Certain application prospect.
(4) illustrate
Fig. 1 is piezoresistance type acceleration of the present invention, the cross-sectional view of pressure integrated sensor；
Fig. 2 is piezoresistance type acceleration of the present invention, the top view of pressure integrated sensor；
Fig. 3～Figure 14 is the manufacturing process flow generalized section of piezoresistance type acceleration of the present invention, pressure integrated sensor：
Fig. 3 is the light boron diffusion pressure drag and piezoresistive pressure sensor pressure to form piezoresistance type acceleration sensor pressure drag region
The light boron in resistance region spreads the schematic diagram of pressure drag；
Fig. 4 is the schematic diagram to form dense boron ohmic contact regions and dense boron inner lead；
Fig. 5 is the schematic diagram for depositing insulating passivation layer and forming fairlead；
Fig. 6 is the schematic diagram to form plain conductor and metal pin；
Fig. 7 is the front deposited silicon nitride layer isolation external world and circuit, and etches the schematic diagram of point runner region；
Fig. 8 is the schematic diagram of front deposited amorphous silicon；
Fig. 9 is etching non-crystalline silicon, forms the schematic diagram in working sensor area and metal pin area；
Figure 10 is the schematic diagram for etching metal pin；
Figure 11 is to form piezoresistance type acceleration sensor, the schematic diagram of piezoresistive pressure sensor film；
Figure 12 carries out the schematic diagram of silicon-glass anodic bonding for the back side；
Figure 13 is that after the cantilever beam structure to form piezoresistance type acceleration sensor, front carries out again amorphous si-glass sun
The schematic diagram of pole bonding；
The schematic diagram that Figure 14 completes to encapsulate for scribing；
In Fig. 1～Figure 14：1- first bonding glass, 2- silicon dioxide layers, the silicon dioxide layer at 2 '-silicon substrate back side,
3- plain conductors, the silicon nitride layers of 4- first, the silicon nitride layer at 4 '-silicon substrate back side, the silicon nitride layers of 5- second, 6- non-crystalline silicons,
The dense boron wires of 7-, 8- metal pins, 9- silicon substrates, 10- second bonding glass, 11- piezoresistive pressure sensor diaphragms,
12- passages, 13- vacuum cavities, 14- piezoresistance type acceleration sensor cantilever beams, 15- piezoresistance type acceleration sensors are light
Light boron diffusion pressure drag, the 17- pressure drags of dense boron ohmic contact regions, 16- piezoresistance type acceleration sensors inside boron diffusion pressure drag
Dense boron Ohmic contact inside the light boron diffusion pressure drag of the light boron diffusion pressure drag of formula pressure sensor, 18- piezoresistive pressure sensors
Area, 19 burst grooves, also, 8a～8g represents successively the first～the 7th pin in Fig. 2；
Figure 15 is a kind of pin connected mode of piezoresistance type acceleration of the present invention, pressure integrated sensor；
Pin definitions in Figure 15：1. the-the first pin connect piezoresistive pressure sensor export just, 2. the-the second pin ground connection,
3. the-the three-prong connect piezoresistive pressure sensor output it is negative, 4. the-the four pin connect positive source, 5. the 5th pin connect pressure drag
The output of formula acceleration transducer is negative, 6. the-the six pin ground connection, 7. the-the seven pin connecing piezoresistance type acceleration sensor and exporting just.
(5) specific embodiment
Below in conjunction with the accompanying drawings the invention will be further described, but protection scope of the present invention is not limited to that.
As shown in figure 1, MEMS piezoresistive acceleration, the pressure integrated sensor encapsulated based on anode linkage, is adopted
First bonding glass-silicon base-the second is bonded glass sandwich structure, described piezoresistance type acceleration, the integrated sensing of pressure
Device mainly includes：Silicon substrate (9), the piezoresistance type acceleration sensor cantilever beam (14) for measuring individual axis acceleration, for measuring
Second key of the piezoresistive pressure sensor diaphragm (11) of pressure, dense boron wire (7), metal pin (8) and silicon substrate anode linkage
Combined glass glass (10) and carry out the first of anode linkage with non-crystalline silicon (6) and be bonded glass (1).
Wherein, the upper surface root for measuring the piezoresistance type acceleration sensor cantilever beam (14) of individual axis acceleration injects
Light boron as piezoresistance type acceleration sensor light boron diffusion pressure drag (16), and in the light boron diffusion of piezoresistance type acceleration sensor
Injection dense boron in pressure drag inside forms dense boron ohmic contact regions (15), and the pressure drag region disposed thereon of piezoresistance type acceleration sensor has
Silicon dioxide layer (2), as insulating passivation layer, is provided with fairlead and utilizes metal with the first silicon nitride layer (4) on insulating passivation layer
Wire (3) connection piezoresistance type acceleration, the pressure drag region of pressure sensor, wire disposed thereon has the second silicon nitride layer (5) to make
It is used for isolating the external world and circuit for insulating passivation layer, improves the reliability of circuit；The pressure drag region of piezoresistance type acceleration sensor
Pressure drag is spread comprising 4 groups of light boron, is made up of two parallel light boron diffusion pressure drags per group, two groups spread pressure drag pair to the light boron of bridge arm
Title is distributed in the region of stress concentration of cantilever beam upper surface root, and in addition two groups are symmetrically distributed in zero stress area, and by metal
Wire (3) constitutes the connection of Hui Sidun full-bridges, after having one perpendicular to the acceleration of device surface, piezoresistance type acceleration sensing
Cantilever beam (14) bending of device, the pressure drag positioned at piezoresistance type acceleration sensor cantilever beam upper surface root is acted on by power,
Resistivity changes, and the pressure drag of piezoresistance type acceleration sensor cantilever beam upper surface root as shown in Figure 2 is complete positioned at Hui Sidun
Bridge to bridge, can obtain being proportional to the electric signal output of power change by Hui Sidun full-bridges, by measuring electric signal output just
Can know that the size of acceleration.Piezoresistance type acceleration sensor part in the present invention is improve using the design of Hui Sidun full-bridges
Sensitivity and can guarantee that good linear.
Piezoresistive pressure sensor diaphragm (11) can be used for measuring Fluid pressure (including pressure, hydraulic pressure), the pressure drag
The upper surface of formula pressure sensor diaphragm (11) is injected with light boron as light boron diffusion pressure drag (17) of piezoresistive pressure sensor,
The dense boron of the light boron diffusion pressure drag inside injection of piezoresistive pressure sensor forms dense boron ohmic contact regions (18), pressure drag type pressure sensing
The pressure drag region disposed thereon of device has silicon dioxide layer (2) with the first silicon nitride layer (4) as insulating passivation layer, insulating passivation layer
On be provided with fairlead and using plain conductor (3) connection piezoresistance type acceleration, the pressure drag region of pressure sensor, wire top is heavy
Product has the second silicon nitride layer (5) to be used for isolating the external world and circuit as insulating passivation layer；The piezoresistive regions of piezoresistive pressure sensor
Pressure drag is equally spread in domain comprising 4 light boron, and 4 light boron diffusion pressure drag parallel arrangements simultaneously constitute Hui Sidun by plain conductor (3)
Full-bridge connects, after having one perpendicular to the pressure of device surface, piezoresistive pressure sensor diaphragm deformation, positioned at pressure resistance type
The pressure drag of pressure sensor diaphragm upper surface is acted on by power, and resistivity changes, pressure drag type pressure sensing as shown in Figure 2
Two pressure drag bars of device diaphragm upper surface middle part and two, outside pressure drag bar respectively positioned at Hui Sidun full-bridges to bridge, by Hui Sidun
Full-bridge can obtain being proportional to the electric signal output of power change, and by measuring electric signal output the big of institute's measuring pressure is just can know that
It is little.The sensitivity of piezoresistive pressure sensor part is improve in the present invention using the design of Hui Sidun full-bridges and can guarantee that good
Good is linear.
The encapsulation of chip adopts secondary anode bonding techniques.First time anode linkage is that chip back carries passage (12)
Second bonding glass (10) with silicon substrate carry out silicon-glass anodic bonding；Second anode linkage is using amorphous silicon layer as in
Interbed makes bonding current not by PN junction, protects sensor PN junction, realizes that front non-crystalline silicon (6) is bonded glass (1) with first
Amorphous silicon-glass anodic bonding, second anode linkage not using silicon on glass bonding the reason for be：Si-glass anode key
PN junction is there is on the bonding face of conjunction, strong voltage during bonding easily punctures PN junction, destroy the electric property of circuit.
In order to avoid non-crystalline silicon (6) is bonded the irregularities of glass (1) bonding face with first, it is ensured that the air-tightness of encapsulation,
Piezoresistance type acceleration of the present invention, pressure integrated sensor do not connect chip operation area and metal pin using plain conductor
(8) by the use of dense boron wire (7) working sensor area is connected, but with metal pin as inner lead.
As shown in Fig. 3～Figure 14, MEMS piezoresistive acceleration, the pressure collection encapsulated based on anode linkage of the present invention
Manufacturing process into sensor comprises the steps：
A) as shown in Figure 3：In one layer of thin silica of the hot oxygen length in silicon substrate (9) front as preflood protective layer, just
Face photoresist goes out the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor as mask lithography,
Then boron ion injection (light boron) is carried out, light boron diffusion pressure drag (16) and pressure drag type pressure of piezoresistance type acceleration sensor is formed
Light boron diffusion pressure drag (17) of sensor, removes photoresist；Described silicon substrate is N-shaped (100) silicon chip；
B) as shown in Figure 4：Front photoresist makees mask in the light boron diffusion pressure drag region of piezoresistance type acceleration sensor
(16) and piezoresistive pressure sensor light boron diffusion pressure drag (17) region make concentrated boron area domain by lithography respectively, then carry out boron ion
Injection (dense boron), forms the dense boron ohmic contact regions (15) inside the light boron diffusion pressure drag of piezoresistance type acceleration sensor and pressure resistance type
Dense boron ohmic contact regions (18) inside the light boron diffusion pressure drag of pressure sensor, remove photoresist, annealing；
C) as shown in Figure 5：Using the titanium dioxide of low-pressure chemical vapor deposition (LPCVD) the technique elder generation μ m-thick of double-sided deposition 0.8
Silicon layer (2), (2 '), then with silicon nitride layer (4), (4 ') of the μ m-thick of LPCVD techniques double-sided deposition 0.2, silicon dioxide layer (2) and nitrogen
SiClx layer (4) goes out lead hole pattern, the etching insulation of dry method RIE together as insulating passivation layer, front photoresist as mask lithography
Passivation layer removes photoresist to silicon substrate (9) top surface, forms fairlead；
D) as shown in Figure 6：Front sputters the metallic aluminium of 1 μ m-thick, and front photoresist goes out metal aluminum conductor (3) as mask lithography
And metal pin (8) figure, corrode the aluminium without photoresist overlay area, photoresist is removed, Alloying Treatment forms metallic aluminium
Wire (3) and metal pin (8)；E) as shown in Figure 7：Using plasma enhanced chemical vapor deposition method (PECVD) front
The silicon nitride (5) of one layer of 0.2 μ m-thick of deposition covers aluminum conductor, used as the insulating passivation layer isolation external world and circuit, protection chip electricity
Performance is learned, front photoresist goes out burst groove figure, dry method RIE etch silicon nitride (4), (5), silica (2) as mask lithography
To silicon substrate (9) top surface, photoresist is removed；
F) as shown in Figure 8：Front deposits the non-crystalline silicon (6) of one layer of 3 μ m-thick, in point runner region non-crystalline silicon (6) and a silicon substrate
(9) top surface directly contact；
G) as shown in Figure 9：Front photoresist goes out working sensor region and metal pin (8) administrative division map as mask lithography
Shape, RIE etchings non-crystalline silicon (6) to silicon nitride layer (5) removes photoresist；
H) as shown in Figure 10：Front photoresist goes out metal pin (8) regional graphics, RIE etch silicon nitrides as mask lithography
(5) to metallic aluminium pin (8) layer, photoresist is removed；
I) as shown in figure 11：Back side photoresist goes out to corrode silicon window, RIE etch silicon nitrides (4 '), dioxy as mask lithography
SiClx (2 ') removes photoresist to silicon substrate (9) top surface, and silicon nitride layer (4 '), silica (2 ') layer make mask wet etching silicon
Base forms piezoresistance type acceleration sensor, piezoresistive pressure sensor diaphragm；
J) as shown in figure 12：The remaining silicon nitride (4 ') of dry method RIE etched backside, silica (2 ') to silicon substrate (9) bottom
Face, the back side carries out silicon-glass anodic bonding；
K) as shown in figure 13：Front photoresist goes out cantilever beam (14) release profiles as mask lithography, and deep reaction ion is carved
Erosion (DRIE) cuts through silicon nitride (4), (5), and silica (2), silicon substrate forms the cantilever beam of piezoresistance type acceleration sensor part
Structure, removes photoresist, and front carries out amorphous silicon-glass anodic bonding；
L) as shown in figure 14：Scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry, first time scribing, removes gold
Category pin top glass, second scribing is scratched structure in burst groove, separates one single chip, completes encapsulation.Further, by institute
State technological process manufacture MEMS piezoresistive acceleration, pressure integrated sensor, the cantilever beam of piezoresistance type acceleration sensor and
The thickness of piezoresistive pressure sensor diaphragm is identical, and in order to obtain both different thickness piezoresistance type acceleration, pressure drag are adjusted
The sensitivity of formula pressure sensor, silicon corrosion in the back side in the processing step (i) can make two bites at a cherry.As shown in figure 11, root
The difference of sensitivity is required according to piezoresistance type acceleration, piezoresistive pressure sensor, piezoresistance type acceleration sensing in the present embodiment
The cantilever cantilever thickness of device is 12 μm, and the thickness of piezoresistive pressure sensor diaphragm is 30 μm, at this moment needs first to corrode pressure resistance type
Pressure sensor carries on the back chamber, corrodes and another corrosion after depth difference, and concrete technology flow process is：Back side photoresist is made mask lithography and is beaten
Piezoresistive pressure sensor back surface corrosion window is opened, RIE etches away silicon nitride, silica to silicon substrate bottom surface, silicon nitride, dioxy
SiClx layer makees mask, and 40%KOH solution wet etching silicon substrates, corrosion depth is controlled at 18 μm, forms two sensors and carries on the back chamber
Corrosion depth it is poor, then again photoresist make mask lithography open piezoresistance type acceleration sensor back surface corrosion window, RIE etching
Fall silicon nitride, silica to silicon substrate bottom surface, 40%KOH solution wet etching silicon substrates the pressure resistance type wanted acceleration until corroding
Degree sensor cantilever beam and piezoresistive pressure sensor diaphragm, form the different piezoresistance type acceleration of thickness and pass after corroding twice
Sensor cantilever beam and piezoresistive pressure sensor diaphragm structure.
Further, in order to ensure the quality of anode linkage twice, by test of many times, The present invention gives MEMS pressures
The optimum bonding parameter of resistive acceleration, pressure integrated sensor, such as table 1, shown in 2.
Table 1 first time anode linkage (si-glass) parameter
Second anode linkage of table 2 (amorphous si-glass) parameter
Further, the present invention in piezoresistance type acceleration sensor cantilever beam except monolateral pair of cantilever shown in Fig. 2
Beyond structure, according to different sensitivity, resonant frequency requirement can also using monolateral single cantilever beam, bilateral twin beams, bilateral four
The structures such as beam, four Bian Siliang, the beam of four side eight, light boron diffusion pressure drag can also be distributed in other positions.Pressure resistance type pressure in the present invention
Force sensor portion is designed using rectangular film, and 4 light boron spread pressure drag parallel arrangement, make full use of horizontal piezoresistive effect, so
Piezoresistive pressure sensor there is bridge arm resistance to be evenly distributed, output linearity degree and the preferable advantage of uniformity, certainly, according to
Different sensitivity needs, and light boron diffusion pressure drag can adopt different distribution modes.
It should be noted that present invention cantilever beam structure size, diaphragm size, pressure drag number not to Sensor section
The parameters such as mesh, pressure drag size and arranged distribution are defined, and also the technological parameter of manufacturing process of the present invention are not limited
It is fixed, and the embodiment is only illustrative, and any restriction is not done to the present invention.
Claims (10)
1. a kind of piezoresistance type acceleration, pressure integrated sensor, it is characterised in that described sensor is integrated with pressure resistance type simultaneously
Acceleration transducer and piezoresistive pressure sensor, and it is bonded glass sandwich knot with the first bonding glass-silicon base-the second
Structure；Described silicon substrate has been internally formed piezoresistance type acceleration sensor cantilever beam and piezoresistive pressure sensor diaphragm, silicon substrate
Front is formed with two pressure drag regions, is respectively pressure drag region and the piezoresistive pressure sensor of piezoresistance type acceleration sensor
Pressure drag region；The pressure drag region of the piezoresistance type acceleration sensor is located at the upper surface of piezoresistance type acceleration sensor cantilever beam
Root, and the light boron diffusion pressure drags of light boron formation 4 are injected with, while the inside of light boron diffusion pressure drag is injected with dense boron and forms dense
Boron ohmic contact regions；The pressure drag region of the piezoresistive pressure sensor is located at the upper surface of piezoresistive pressure sensor diaphragm,
It has been also injected into light boron and has formed 4 light boron diffusion pressure drags, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron ohm
Contact zone；The disposed thereon in two described pressure drag regions has silicon dioxide layer, and silicon dioxide layer disposed thereon has the first nitridation
, together as insulating passivation layer, described insulating passivation layer is provided with and draws for silicon layer, described silicon dioxide layer and the first silicon nitride layer
String holes, using plain conductor two pressure drag regions, and 4 light boron diffusions in piezoresistance type acceleration sensor pressure drag region are connected
Pressure drag constitutes the connection of Hui Sidun full-bridges by plain conductor, and 4 light boron in piezoresistive pressure sensor pressure drag region spread pressure drag
The connection of Hui Sidun full-bridges is also constituted by plain conductor；The disposed thereon of the plain conductor has the second silicon nitride layer, and described
The disposed thereon of nitride silicon layer has amorphous silicon layer, and described non-crystalline silicon is bonded glass anode linkage with first, also, using non-
Used as step, described non-crystalline silicon is bonded after glass bonding and forms a vacuum cavity crystal silicon with first, and connection pressure resistance type accelerates
Degree sensor and piezoresistive pressure sensor；The back side of the silicon substrate is bonded glass anode linkage, the second described key with second
Combined glass glass carries passage, and described passage is located at the lower section of piezoresistive pressure sensor diaphragm；The silicon substrate is just
Face is also formed with dense boron wire, is connected with metal pin above the dense boron wire, dense boron wire by working sensor area with
Metal pin is connected.
2. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described pressure resistance type accelerates
The light boron diffusion pressure drag in degree sensor pressure drag region and the light boron in piezoresistive pressure sensor pressure drag region spread the arrangement of pressure drag
Mode is：Longitudinal direction along silicon substrate (1,1,0) crystal orientation direction, laterally along silicon substrate (1, -1,0) crystal orientation directional spreding, longitudinal pressure drag
Coefficient, horizontal piezoresistance coefficient are respectively 71.8, -66.3.
3. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described pressure resistance type accelerates
Degree sensor is designed for double cantilever beam, and the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region is 4 groups, per group by two
Individual parallel light boron diffusion pressure drag composition, wherein two groups of stress that cantilever beam root is symmetrically distributed in the light boron diffusion pressure drag of bridge arm
Concentrated area, in addition two groups of light boron diffusion pressure drags be symmetrically distributed in zero stress area.
4. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described pressure drag type pressure
Sensor is designed using rectangular film, and 4 light boron in piezoresistive pressure sensor pressure drag region spread pressure drag parallel arrangement.
5. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described metal pin has
7, the first pin connect piezoresistive pressure sensor export just, the second pin ground connection, three-prong connect piezoresistive pressure sensor
Output is negative, the 4th pin connect positive source, the 5th pin connect negative piezoresistance type acceleration sensor output, the 6th pin ground connection, the
Seven pins connect piezoresistance type acceleration sensor and export just, and piezoresistive pressure sensor and piezoresistance type acceleration sensor share power supply
Positive pole.
6. piezoresistance type acceleration as described in any claim in Claims 1 to 5, pressure integrated sensor, its feature exists
In described silicon substrate be N-shaped (100) silicon chip.
7. piezoresistance type acceleration as described in any claim in Claims 1 to 5, pressure integrated sensor, its feature exists
In the second described silicon nitride layer disposed thereon non-crystalline silicon thickness be 2～4 μm.
8. piezoresistance type acceleration as claimed in claim 1, the manufacture method of pressure integrated sensor, it is characterised in that described
Manufacture method is carried out as follows：
A) in the long layer of silicon dioxide protective layer of the hot oxygen in silicon substrate front, front photoresist goes out piezoresistance type acceleration and passes as mask lithography
The pressure drag region of sensor and the pressure drag region of piezoresistive pressure sensor, then in two pressure drag regions inject light boron, shape respectively
Pressure drag is spread into light boron, photoresist is removed；
B) front photoresist makees mask and makes concentrated boron area domain by lithography in light boron diffusion pressure drag region, is then injected into dense boron, expands in light boron
Scattered pressure drag is internally formed dense boron ohmic contact regions, removes photoresist, annealing；
C) first double-sided deposition silicon dioxide layer, then double-sided deposition silicon nitride layer, positive silicon dioxide layer and silicon nitride layer are together
Used as insulating passivation layer, front photoresist goes out fairlead as mask lithography, and dry method RIE etches insulating passivation layer to silicon substrate top surface,
Photoresist is removed, fairlead is formed；
D) front deposited metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion is without light
The metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin；
E) front deposits one layer of silicon nitride and covers plain conductor, the isolation external world and circuit, and front photoresist goes out to divide as mask lithography
Film trap figure, dry method RIE etch nitride silicon layer, silicon dioxide layer to silicon substrate top surface remove photoresist；
F) front deposits one layer of non-crystalline silicon, in point runner region non-crystalline silicon and silicon substrate top surface directly contact；
G) front photoresist goes out working sensor region and metal pin regional graphics, RIE etching non-crystalline silicons as mask lithography
To silicon nitride layer, photoresist is removed；
H) front photoresist goes out metal pin regional graphics as mask lithography, and RIE etch silicon nitrides to metal pin layer remove light
Photoresist；
I) back side photoresist goes out to corrode silicon window as mask lithography, and RIE etch silicon nitrides, silica to silicon substrate bottom surface are removed
Photoresist, silicon nitride layer, silicon dioxide layer make mask wet etching silicon substrate and form piezoresistance type acceleration sensor, pressure drag type pressure
Colorimetric sensor films；
J), to silicon substrate bottom surface, the back side carries out silicon-glass anodic bonding for the remaining silicon nitride of dry method RIE etched backside, silica；
K) front photoresist goes out cantilever beam release profiles as mask lithography, and DRIE cuts through silicon nitride, silica, silicon substrate and forms pressure
The cantilever beam structure of resistive acceleration transducer, removes photoresist, and front carries out amorphous silicon-glass anodic bonding；
L) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry, first time scribing, removes metal pin top glass,
Structure in burst groove is scratched in second scribing, separates one single chip, completes encapsulation.
9. piezoresistance type acceleration as claimed in claim 8, the manufacture method of pressure integrated sensor, it is characterised in that step j)
The middle back side carries out the technological parameter of silicon-glass anodic bonding：300～500V of voltage, 15～20mA of electric current, temperature 300～400
DEG C, 2000～3000N of pressure, 5～10min of time.
10. piezoresistance type acceleration as claimed in claim 8, the manufacture method of pressure integrated sensor, it is characterised in that step
K) technological parameter that front carries out amorphous silicon-glass anodic bonding in is：450～1000V of voltage, 15～25mA of electric current, temperature
300～400 DEG C, 2000～3000N of pressure, 15～25min of time.
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