CN104089642A - Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor - Google Patents
Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor Download PDFInfo
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- CN104089642A CN104089642A CN201410265336.0A CN201410265336A CN104089642A CN 104089642 A CN104089642 A CN 104089642A CN 201410265336 A CN201410265336 A CN 201410265336A CN 104089642 A CN104089642 A CN 104089642A
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Abstract
The invention provides a piezoresistive acceleration and pressure integrated sensor based on anodic bonding and packaging and a method for manufacturing the piezoresistive acceleration and pressure integrated sensor. The piezoresistive acceleration and pressure integrated sensor integrates a piezoresistive acceleration sensor and a piezoresistive pressure sensor and is provided with a first bonding glass-silicon substrate-second bonding glass type sandwich structure. The piezoresistive acceleration and pressure integrated sensor is novel in structure, low in weight, small in size, high in stability, and high in anti-pollution capacity. In addition, according to the piezoresistive acceleration and pressure integrated sensor and the method for manufacturing the piezoresistive acceleration and pressure integrated sensor, the same technology is applied to the same chip, the pressure measurement capacity and the acceleration measurement capacity are achieved through different kinds of design, and the technological processes are simple and easy to implement. The piezoresistive acceleration and pressure integrated sensor has a certain application prospect in the fields such as the aviation field, the military field, the automobile field and the environment monitoring field.
Description
(1) technical field
The present invention relates to piezoresistance type acceleration, pressure integrated sensor and manufacture method thereof in MEMS (MEMS (micro electro mechanical system)) sensor field, be specifically related to a kind of MEMS piezoresistance type acceleration, pressure integrated sensor and manufacture method thereof based on anode linkage encapsulation.
(2) background technology
In the fields such as Aero-Space, military affairs, automobile, environmental monitoring, often want acceleration measurement, pressure and other parameters simultaneously.But in these application, due to the strict restriction of environmental suitability, volume, cost and function etc., require sensor to there is microminiaturization, integrated, multi-functional feature.Integrated sensor can be on same chip integrated multiple different sensors, in order to different physical quantitys is detected simultaneously, and volume is little, unit cost is low, has potential application foreground widely in above-mentioned field, therefore receive increasing concern both at home and abroad.But compare with integrated circuit, the integrated of sensor seems more difficult, and reason is that principle of work and the organization plan difference of different sensors is very large, and from principle of work, some sensors are the responsive principles of resistance, and some sensors are capacitance-sensitive principles; From organization plan, some needs the special constructions such as film, and some needs special sensitive material.Therefore the sensor of these different principle and structure is carried out to integrated manufacture, need to study a set of specific process.
(3) summary of the invention
The object of this invention is to provide a kind of piezoresistance type acceleration, pressure integrated sensor and manufacture method thereof based on anode linkage encapsulation technology, surperficial micro-processing, body micro fabrication, realized and directly two kinds of sensors are carried out to integrated manufacture on a disk.
For achieving the above object, the technical solution used in the present invention is:
A kind of piezoresistance type acceleration, pressure integrated sensor, described sensor is simultaneously integrated piezoresistance type acceleration sensor and piezoresistive pressure sensor, and there is first key combined glass glass-silica-based the-second bonding glass sandwich structure; Described silica-based inside is formed with piezoresistance type acceleration sensor semi-girder and piezoresistive pressure sensor diaphragm, silica-based front is formed with two pressure drag regions, is respectively the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor; The pressure drag region of described piezoresistance type acceleration sensor is positioned at the upper surface root of piezoresistance type acceleration sensor semi-girder, and is injected with 4 light boron diffusion pressure drags of light boron formation, and the inside of simultaneously light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The pressure drag region of described piezoresistive pressure sensor is positioned at the upper surface of piezoresistive pressure sensor diaphragm, be also injected with light boron and form 4 light boron diffusion pressure drags, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The top in two described pressure drag regions deposits silicon dioxide layer, silicon dioxide layer top deposits the first silicon nitride layer, described silicon dioxide layer together with the first silicon nitride layer as insulating passivation layer, described insulating passivation layer has fairlead, utilize plain conductor to be communicated with two pressure drag regions, and 4 light boron diffusion pressure drags in piezoresistance type acceleration sensor pressure drag region form Hui Sidun full-bridge by plain conductor and connect, 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region also form Hui Sidun full-bridge by plain conductor and connect; The top of described plain conductor deposits the second silicon nitride layer, the top of described the second silicon nitride layer deposits amorphous silicon layer, described amorphous silicon and first key combined glass glass anode linkage, and, utilize amorphous silicon as step, after described amorphous silicon and first key combined glass glass bonding, form a vacuum cavity, be communicated with piezoresistance type acceleration sensor and piezoresistive pressure sensor; The described silica-based back side and the second bonding glass anode linkage, the second described bonding glass is with air hole, and described air hole is positioned at the below of piezoresistive pressure sensor diaphragm; Described silica-based front is also formed with dense boron wire, and the top of described dense boron wire is connected with metal pin, and dense boron wire is communicated with working sensor district with metal pin.
Piezoresistance type acceleration of the present invention, pressure integrated sensor, preferably described silica-based be N-shaped (100) silicon chip; Preferably the thickness of the amorphous silicon of the top of described the second silicon nitride layer deposition is 2～4 μ m.
The principle of work of piezoresistance type acceleration of the present invention, pressure integrated sensor is as follows: MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor be the pressure drag characteristic based on monocrystalline silicon after boron doping mainly, pressure drag on piezoresistance type acceleration sensor semi-girder and piezoresistive pressure sensor diaphragm is subject to after the effect of power, resistivity changes, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the size of surveyed physical quantity by measuring electric signal output.In the present invention, we realize P type pressure drag to N-shaped (100) crystal orientation silicon chip B Implanted, the electricity of utilizing PN junction to realize pressure drag completely cuts off, due to the anisotropy of the piezoresistance coefficient of pressure drag, the stress of different directions has different impacts to pressure drag, in order to increase as far as possible sensitivity, the arrangement mode of the light boron diffusion pressure drag in the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag of the present invention region and piezoresistive pressure sensor pressure drag region is: longitudinally along silica-based (1, 1, 0) crystal orientation direction, laterally along silica-based (1,-1, 0) crystal orientation direction distributes, longitudinally piezoresistance coefficient, laterally piezoresistance coefficient is respectively 71.8,-66.3.
Piezoresistance type acceleration sensor of the present invention designs for double cantilever beam, the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region is 4 groups, every group is made up of two parallel light boron diffusion pressure drags, two groups are symmetrically distributed in the region of stress concentration of semi-girder upper surface root to the light boron diffusion of brachium pontis pressure drag, other two groups of light boron diffusion pressure drags are symmetrically distributed in zero stress district.Certainly, need also to adopt different cantilever beam structures according to different sensitivity, as monolateral single-beam, bilateral twin beams, bilateral four beams, four Bian Siliang, four limit eight beams etc.And, described light boron diffusion pressure drag also can adopt different distribution modes, 4 groups of light boron diffusion pressure drags (can be 4, also can 8 folding types etc.) connect and compose Hui Sidun full-bridge by plain conductor, a kind of connected mode of piezoresistance type acceleration sensor metal pin of the present invention is: the 4th pin connects positive source, share with piezoresistive pressure sensor in the present invention, it is negative that the 5th pin connects piezoresistance type acceleration sensor output, the 6th pin ground connection, the 7th pin connects piezoresistance type acceleration sensor and is just exporting.
Piezoresistive pressure sensor of the present invention adopts rectangular film design, 4 light boron diffusion pressure drag parallel arrangements, make full use of horizontal piezoresistive effect, such piezoresistive pressure sensor has brachium pontis resistance and is evenly distributed, the good advantage of output linearity degree and consistance, certainly,, according to different sensitivity needs, described light boron diffusion pressure drag can adopt different distribution modes.4 light boron diffusion pressure drags of piezoresistive pressure sensor of the present invention connect and compose Hui Sidun full-bridge by plain conductor, and, a kind of connected mode of piezoresistive pressure sensor metal pin is: the first pin connects piezoresistive pressure sensor and just exporting, the second pin ground connection, it is negative that three-prong connects piezoresistive pressure sensor output, the 4th pin connects positive source, with piezoresistance type acceleration sensor common source positive pole in the present invention.
The present invention also provides the manufacture method of described piezoresistance type acceleration, pressure integrated sensor, and described manufacture method comprises the steps:
A) the long layer of silicon dioxide protective seam of hot oxygen in silica-based front, front photoresist goes out the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor as mask lithography, then inject light boron in two pressure drag regions respectively, form light boron diffusion pressure drag, remove photoresist;
B) front photoresist is made mask and is made territory, concentrated boron area by lithography in light boron diffusion pressure drag region, then injects dense boron, in the inner dense boron ohmic contact regions that forms of light boron diffusion pressure drag, removes photoresist, annealing;
C) first double-sided deposition silicon dioxide layer, then double-sided deposition silicon nitride layer, positive silicon dioxide layer together with silicon nitride layer as insulating passivation layer, front photoresist goes out fairlead as mask lithography, dry method RIE etching insulating passivation layer, to silica-based end face, is removed photoresist, forms fairlead;
D) front plated metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion does not have the metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin;
E) positive deposition one deck silicon nitride covering metal wire, the isolation external world and circuit, front photoresist goes out a point film trap figure as mask lithography, and dry method RIE etch silicon nitride layer, silicon dioxide layer, to silica-based end face, are removed photoresist;
F) positive deposition one deck amorphous silicon, directly contacts with silica-based end face at a point film trap region amorphous silicon;
G) front photoresist goes out working sensor region and metal pin regional graphics as mask lithography, and RIE etching amorphous silicon, to silicon nitride layer, is removed photoresist;
H) front photoresist goes out metal pin regional graphics as mask lithography, and RIE etch silicon nitride, to metal pin layer, is removed photoresist;
I) back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitride, silicon dioxide are to silica-based bottom surface, remove photoresist, silicon nitride layer, silicon dioxide layer are made the silica-based formation piezoresistance type acceleration sensor of mask wet etching, piezoresistive pressure sensor film;
J) the remaining silicon nitride in the dry method RIE etching back side, silicon dioxide are to silica-based bottom surface, and silicon-glass anodic bonding is carried out at the back side;
K) front photoresist goes out semi-girder release profiles as mask lithography, and DRIE carves the cantilever beam structure of wearing silicon nitride, silicon dioxide, silica-based formation piezoresistance type acceleration sensor, removes photoresist, and amorphous silicon-glass anodic bonding is carried out in front;
L) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry, and metal pin top glass is removed in scribing for the first time, and structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
The manufacture method of piezoresistance type acceleration of the present invention, pressure integrated sensor, step j) in, the technological parameter of recommending the back side to carry out silicon-glass anodic bonding is: voltage 300～500V, electric current 15～20mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 5～10min.
The manufacture method of piezoresistance type acceleration of the present invention, pressure integrated sensor, step k) in, recommend the positive technological parameter that carries out amorphous silicon-glass anodic bonding to be: voltage 450～1000V, electric current 15～25mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 15～25min.
Anode linkage technology of the present invention is a kind of prior art, this technology is well-known to those skilled in the art, its principle of work is: DC power anode is connect to silicon chip, negative pole connects glass sheet, because the performance of glass under certain high temperature is similar to electrolyte, and silicon chip is in the time that temperature is elevated to 300 DEG C～400 DEG C, resistivity will be down to 0.1 Ω m because of intrinsic excitation, and now the conducting particles in glass is (as Na
+) under External Electrical Field, float to the glass surface of negative electrode, and leave negative charge at the glass surface of next-door neighbour's silicon chip, due to Na
+drift make in circuit generation current flow, the glass surface of next-door neighbour's silicon chip can form the space charge region (or claiming depletion layer) that one deck width is as thin as a wafer about several microns.Because depletion layer is electronegative, silicon chip is positively charged, so exist larger electrostatic attraction between silicon chip and glass, make both close contacts, and at bonding face generation physical-chemical reaction, form the Si-O covalent bond of strong bonded, silicon and glass interface are linked together securely.According to described principle, anode linkage technology is not adapted at using in the N-shaped silicon of B Implanted and the bonding of glass, reason is: the N-shaped silicon of B Implanted is in fact a PN junction, in anodic bonding process, strong voltage is by can be by its reverse breakdown in silica-based, cause its electric leakage, destroy the electric property of device.While existing PN junction or other to the more sensitive circuit structure of high pressure ratio near silicon on glass bonding face, in bonding process, the high pressure of 500～1500V easily punctures in MEMS device near circuit bonding region especially, affects the performance of device.
For the problem existing in above-mentioned existing anode linkage technology, the present invention for the second time bonding technology utilizes amorphous silicon as the conductting layer between silica-based, glass, bonding electric current is passed through along silicon-amorphous si-glass direction as much as possible, effectively make described PN junction avoid highfield, finally realize the anode linkage of upper strata amorphous silicon and glass, experiment showed, that this amorphous silicon-glass anodic bonding still can ensure to approach bond strength and the impermeability of si-glass.The encapsulation of the described MEMS piezoresistance type acceleration encapsulating based on anode linkage, pressure integrated sensor need to be through twice anode linkage, bonding is back side silicon-glass anodic bonding for the first time, relatively easily realize, bonding is the anode linkage of front amorphous silicon and glass for the second time, relatively difficulty, can suitably add strong bonding voltage, increase bonding time.In the present invention, utilize amorphous silicon and glass bonding to also have a very large advantage, described bonding method has avoided glass to contact with the direct of silicon, has stopped the Na that original glass and silicon bonding surface may produce
+isoionic pollution.
In MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor structure, in the amorphous si-glass bonding process of front, utilize amorphous silicon to form a vacuum cavity as step, be communicated with piezoresistance type acceleration sensor and piezoresistive pressure sensor.Described amorphous silicon is as step, and the method for designing of two shared vacuum chambers of sensor has the advantage of two highly significants: (1) has removed the bonding region between two sensors, reduce the volume of piezoresistance type acceleration of the present invention, pressure integrated sensor, reduced the cost of one single chip; (2) processing that do not need to slot of first key combined glass glass directly just can be carried out bonding.In MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor structure, the thickness of upper vacuum cavity directly depends on the thickness of amorphous silicon deposition, because amorphous silicon deposition obtains blocked up its density, adhesiveness all can be affected, and can strengthen the difficulty of lower step photoetching, so for fear of glass in bonding process and silicon nitride Direct Bonding, ensure the performance that amorphous silicon is good, the amorphous silicon thickness in sensor of the present invention can be got 2～4 μ m simultaneously.
The present invention is the MEMS piezoresistance type acceleration that utilizes anode linkage encapsulation, pressure integrated sensor, this sensor is simultaneously integrated piezoresistance type acceleration sensor and piezoresistive pressure sensor, recommend to do silica-based with N-shaped silicon chip (100), adopt surperficial micro-processing technology and body micro-processing technology to manufacture the semi-girder with light boron diffusion pressure drag, diaphragm is respectively as piezoresistance type acceleration sensor, piezoresistive pressure sensor structure, and utilize secondary anode bonding techniques to carry out wafer level packaging, anode linkage adopts silicon-glass anodic bonding for the first time, anode linkage utilizes amorphous silicon layer to make bonding electric current not pass through PN junction as middle layer for the second time, protection sensor PN junction, realize amorphous silicon-glass anodic bonding.Utilize the encapsulation of amorphous silicon-glass anodic bonding technology to solve and in traditional si-glass anodic bonding process, easily puncture silicon face PN junction and produce the shortcomings such as ionic soil.Piezoresistance type acceleration of the present invention, pressure integrated sensor structure novelty, lightweight, volume is little, good stability, contamination resistance are strong.In addition, in the present invention, on same chip, use identical technique, different designs realizes pressure survey and these two kinds of abilities of acceleration analysis, and technological process is simple.Sensor of the present invention has certain application prospect in fields such as Aero-Space, military affairs, automobile, environmental monitorings.
(4) brief description of the drawings
Fig. 1 is the cross-sectional view of piezoresistance type acceleration of the present invention, pressure integrated sensor;
Fig. 2 is the vertical view of piezoresistance type acceleration of the present invention, pressure integrated sensor;
Fig. 3～Figure 14 is the manufacturing process flow diagrammatic cross-section of piezoresistance type acceleration of the present invention, pressure integrated sensor:
Fig. 3 is the schematic diagram that forms the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region and the light boron diffusion pressure drag in piezoresistive pressure sensor pressure drag region;
Fig. 4 is the schematic diagram that forms dense boron ohmic contact regions and dense boron inner lead;
Fig. 5 is deposition insulating passivation layer the schematic diagram that forms fairlead;
Fig. 6 is the schematic diagram that forms plain conductor and metal pin;
Fig. 7 is the isolated external world of positive deposited silicon nitride layer and circuit, and etches point schematic diagram in film trap region;
Fig. 8 is the schematic diagram of front deposition of amorphous silicon;
Fig. 9 is etching amorphous silicon, forms the schematic diagram in working sensor district and metal pin district;
Figure 10 is the schematic diagram that etches metal pin;
Figure 11 is the schematic diagram that forms piezoresistance type acceleration sensor, piezoresistive pressure sensor film;
Figure 12 is the schematic diagram that silicon-glass anodic bonding is carried out at the back side;
Figure 13 be form the cantilever beam structure of piezoresistance type acceleration sensor after, the positive schematic diagram that carries out again amorphous silicon-glass anodic bonding;
Figure 14 is the schematic diagram that scribing completes encapsulation;
In Fig. 1～Figure 14: 1-first key combined glass glass, 2-silicon dioxide layer, the silicon dioxide layer at the 2 '-silica-based back side, 3-plain conductor, 4-the first silicon nitride layer, the silicon nitride layer at the 4 '-silica-based back side, 5-the second silicon nitride layer, 6-amorphous silicon, the dense boron wire of 7-, 8-metal pin, 9-is silica-based, 10-the second bonding glass, 11-piezoresistive pressure sensor diaphragm, 12-air hole, 13-vacuum cavity, 14-piezoresistance type acceleration sensor semi-girder, the dense boron ohmic contact regions of the light boron diffusion of 15-piezoresistance type acceleration sensor pressure drag inside, the light boron diffusion pressure drag of 16-piezoresistance type acceleration sensor, the light boron diffusion pressure drag of 17-piezoresistive pressure sensor, the dense boron ohmic contact regions of the light boron diffusion of 18-piezoresistive pressure sensor pressure drag inside, 19 points of film traps, and, in Fig. 2,8a～8g represents the first～seven pin successively,
Figure 15 is a kind of pin connected mode of piezoresistance type acceleration of the present invention, pressure integrated sensor;
Pin definitions in Figure 15: 1.-the first pin connect piezoresistive pressure sensor output just, 2.-the second pin ground connection, 3.-three-prong connects that piezoresistive pressure sensor output is negative, the 4.-tetra-pin connects positive source, 5. the 5th pin connects that piezoresistance type acceleration sensor output is negative, the 6.-six pin ground connection, the 7.-seven pin connects piezoresistance type acceleration sensor and just exporting.
(5) embodiment
Below in conjunction with accompanying drawing, the invention will be further described, but protection scope of the present invention is not limited in this.
As shown in Figure 1, the described MEMS piezoresistance type acceleration based on anode linkage encapsulation, pressure integrated sensor, adopt first key combined glass glass-silica-based the-second bonding glass sandwich structure, described piezoresistance type acceleration, pressure integrated sensor mainly comprises: silica-based (9), for measuring the piezoresistance type acceleration sensor semi-girder (14) of individual axis acceleration, for the piezoresistive pressure sensor diaphragm (11) of gaging pressure, dense boron wire (7), metal pin (8), carry out the first key combined glass glass (1) of anode linkage with the second bonding glass (10) of silica-based anode linkage and with amorphous silicon (6).
Wherein, the upper surface root that is used for the piezoresistance type acceleration sensor semi-girder (14) of measuring individual axis acceleration has injected the light boron diffusion pressure drag (16) of light boron as piezoresistance type acceleration sensor, and form dense boron ohmic contact regions (15) at the dense boron of the piezoresistance type acceleration sensor inner injection of light boron diffusion pressure drag, above the pressure drag region of piezoresistance type acceleration sensor, deposit silicon dioxide layer (2) and the first silicon nitride layer (4) as insulating passivation layer, on insulating passivation layer, have fairlead and utilize plain conductor (3) to be communicated with piezoresistance type acceleration, the pressure drag region of pressure transducer, wire top deposits the second silicon nitride layer (5) and is used for isolating the external world and circuit as insulating passivation layer, improve the reliability of circuit, 4 groups of light boron diffusion pressure drags of pressure drag district inclusion of piezoresistance type acceleration sensor, every group is made up of two parallel light boron diffusion pressure drags, two groups are symmetrically distributed in the region of stress concentration of semi-girder upper surface root to the light boron diffusion of brachium pontis pressure drag, other two groups are symmetrically distributed in zero stress district, and form the connection of Hui Sidun full-bridge by plain conductor (3), when existing after an acceleration perpendicular to device surface, semi-girder (14) bending of piezoresistance type acceleration sensor, the pressure drag that is positioned at piezoresistance type acceleration sensor semi-girder upper surface root is subject to the effect of power, resistivity changes, as shown in Figure 2 the pressure drag of piezoresistance type acceleration sensor semi-girder upper surface root be positioned at Hui Sidun full-bridge to bridge, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the size of acceleration by measuring electric signal output.Utilize the design of Hui Sidun full-bridge to improve the sensitivity of piezoresistance type acceleration sensor part in the present invention and can ensure good linearity.
Piezoresistive pressure sensor diaphragm (11) can (comprise pressure for measuring hydrodynamic pressure, hydraulic pressure), the upper surface of described piezoresistive pressure sensor diaphragm (11) is injected with the light boron diffusion pressure drag (17) of light boron as piezoresistive pressure sensor, the dense boron of the piezoresistive pressure sensor inner injection of light boron diffusion pressure drag forms dense boron ohmic contact regions (18), above the pressure drag region of piezoresistive pressure sensor, deposit silicon dioxide layer (2) and the first silicon nitride layer (4) as insulating passivation layer, on insulating passivation layer, have fairlead and utilize plain conductor (3) to be communicated with piezoresistance type acceleration, the pressure drag region of pressure transducer, wire top deposits the second silicon nitride layer (5) and is used for isolating the external world and circuit as insulating passivation layer, the pressure drag region of piezoresistive pressure sensor comprises 4 light boron diffusion pressure drags equally, 4 light boron diffusion pressure drag parallel arrangements also form the connection of Hui Sidun full-bridge by plain conductor (3), when existing after the pressure perpendicular to device surface, the distortion of piezoresistive pressure sensor diaphragm, the pressure drag that is positioned at piezoresistive pressure sensor diaphragm upper surface is subject to the effect of power, resistivity changes, as shown in Figure 2 two pressure drag bars of piezoresistive pressure sensor diaphragm upper surface middle part and two, outside pressure drag bar lay respectively at Hui Sidun full-bridge to bridge, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the size of institute's measuring pressure by measuring electric signal output.Utilize the design of Hui Sidun full-bridge to improve the sensitivity of piezoresistive pressure sensor part in the present invention and can ensure good linearity.
The encapsulation of chip adopts secondary anode bonding techniques.Anode linkage is the second bonding glass (10) and silica-based carry out silicon-glass anodic bonding of chip back with air hole (12) for the first time; Anode linkage adopts amorphous silicon layer to make bonding electric current not pass through PN junction as middle layer for the second time; protection sensor PN junction; realize the amorphous silicon-glass anodic bonding of front amorphous silicon (6) and first key combined glass glass (1); anode linkage does not adopt the reason of silicon on glass bonding to be for the second time: on the bonding face of silicon-glass anodic bonding, exist PN junction; strong voltage when bonding easily punctures PN junction, destroys the electric property of circuit.
Out-of-flatness for fear of amorphous silicon (6) with first key combined glass glass (1) bonding face, ensure the impermeability of encapsulation, piezoresistance type acceleration of the present invention, pressure integrated sensor do not adopt plain conductor to connect chip workspace and metal pin (8), but utilize dense boron wire (7) as inner lead, working sensor district to be connected with metal pin.
As shown in Fig. 3～Figure 14, the MEMS piezoresistance type acceleration encapsulating based on anode linkage of the present invention, the manufacturing process of pressure integrated sensor comprise the steps:
A) as shown in Figure 3: at the thin silicon dioxide of the long one deck of silica-based (9) positive hot oxygen as preflood protective seam, front photoresist goes out the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor as mask lithography, then carry out boron Implantation (light boron), form the light boron diffusion pressure drag (16) of piezoresistance type acceleration sensor and the light boron diffusion pressure drag (17) of piezoresistive pressure sensor, remove photoresist; Described silica-based be N-shaped (100) silicon chip;
B) as shown in Figure 4: front photoresist is made mask and made respectively territory, concentrated boron area by lithography in the light boron diffusion pressure drag region (16) of piezoresistance type acceleration sensor and light boron diffusion pressure drag (17) region of piezoresistive pressure sensor, then carry out boron Implantation (dense boron), form the dense boron ohmic contact regions (15) of the light boron diffusion of piezoresistance type acceleration sensor pressure drag inside and the dense boron ohmic contact regions (18) of the light boron diffusion of piezoresistive pressure sensor pressure drag inside, remove photoresist, annealing;
C) as shown in Figure 5: adopt first thick silicon dioxide layer (2), (2 ') of double-sided deposition 0.8 μ m of low-pressure chemical vapor deposition (LPCVD) technique, use again silicon nitride layer (4), (4 ') that LPCVD technique double-sided deposition 0.2 μ m is thick, silicon dioxide layer (2) and silicon nitride layer (4) are together as insulating passivation layer, front photoresist goes out fairlead figure as mask lithography, dry method RIE etching insulating passivation layer is to silica-based (9) end face, remove photoresist, form fairlead;
D) as shown in Figure 6: the thick metallic aluminium of positive sputter 1 μ m, front photoresist goes out metallic aluminium wire (3) and metal pin (8) figure as mask lithography, corrosion does not have the aluminium of photoresist overlay area, remove photoresist, Alloying Treatment, forms metallic aluminium wire (3) and metal pin (8); E) as shown in Figure 7: thick silicon nitride (5) the aluminium coating wire of using plasma enhanced chemical vapor deposition method (PECVD) positive deposition one deck 0.2 μ m, as the isolated external world of insulating passivation layer and circuit, protection chip electric property, front photoresist goes out a point film trap figure as mask lithography, dry method RIE etch silicon nitride (4), (5), silicon dioxide (2), to silica-based (9) end face, is removed photoresist;
F) as shown in Figure 8: the thick amorphous silicon (6) of positive deposition one deck 3 μ m, directly contacts with silica-based (9) end face at a point film trap region amorphous silicon (6);
G) as shown in Figure 9: front photoresist goes out working sensor region and metal pin (8) regional graphics as mask lithography, RIE etching amorphous silicon (6), to silicon nitride layer (5), is removed photoresist;
H) as shown in figure 10: front photoresist goes out metal pin (8) regional graphics as mask lithography, RIE etch silicon nitride (5), to metallic aluminium pin (8) layer, is removed photoresist;
I) as shown in figure 11: back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitride (4 '), silicon dioxide (2 ') are to silica-based (9) end face, remove photoresist, silicon nitride layer (4 '), silicon dioxide (2 ') layer are made the silica-based formation piezoresistance type acceleration sensor of mask wet etching, piezoresistive pressure sensor diaphragm;
J) as shown in figure 12: the remaining silicon nitride in the dry method RIE etching back side (4 '), silicon dioxide (2 ') are to silica-based (9) bottom surface, and silicon-glass anodic bonding is carried out at the back side;
K) as shown in figure 13: front photoresist goes out semi-girder (14) release profiles as mask lithography, deep reaction ion etching (DRIE) is carved and is worn silicon nitride (4), (5), silicon dioxide (2), the cantilever beam structure of silica-based formation piezoresistance type acceleration sensor part, remove photoresist, amorphous silicon-glass anodic bonding is carried out in front;
L) as shown in figure 14: scribing, realize the encapsulation of one single chip, scribing makes two bites at a cherry, and metal pin top glass is removed in scribing for the first time, and structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.Further, MEMS piezoresistance type acceleration, the pressure integrated sensor manufactured by described technological process, the semi-girder of piezoresistance type acceleration sensor is identical with the thickness of piezoresistive pressure sensor diaphragm, adjust the sensitivity of piezoresistance type acceleration, piezoresistive pressure sensor in order to obtain both different thickness, in described processing step (i), silicon corrosion in the back side can make two bites at a cherry.As shown in figure 11, according to piezoresistance type acceleration, the different requirements of piezoresistive pressure sensor to sensitivity, in the present embodiment, the semi-girder thickness of piezoresistance type acceleration sensor is 12 μ m, and the thickness of piezoresistive pressure sensor diaphragm is 30 μ m, at this moment need first to corrode piezoresistive pressure sensor back of the body chamber, after eroding away depth difference, corrode together again, concrete technology flow process is: back side photoresist is opened piezoresistive pressure sensor back surface corrosion window as mask lithography, RIE etches away silicon nitride, silicon dioxide is to silica-based bottom surface, silicon nitride, silicon dioxide layer is made mask, 40%KOH solution wet etching silicon substrate, corrosion depth is controlled at 18 μ m, the corrosion depth that forms two sensor back of the body chambeies is poor, and then photoresist is opened piezoresistance type acceleration sensor back surface corrosion window as mask lithography, RIE etches away silicon nitride, silicon dioxide is to silica-based bottom surface, 40%KOH solution wet etching is silica-based until erode away piezoresistance type acceleration sensor semi-girder and the piezoresistive pressure sensor diaphragm wanted, twice corrosion forms the different piezoresistance type acceleration sensor semi-girder of thickness and piezoresistive pressure sensor diaphragm structure later.
Further, in order to ensure the quality of twice anode linkage, by test of many times, the present invention has provided the optimum bonding parameter of described MEMS piezoresistance type acceleration, pressure integrated sensor, as table 1, shown in 2.
Table 1 is anode linkage (si-glass) parameter for the first time
Table 2 is anode linkage (amorphous si-glass) parameter for the second time
Further, in the present invention, the semi-girder of piezoresistance type acceleration sensor is except the monolateral double-cantilever structure shown in Fig. 2, require also can adopt the structures such as monolateral single cantilever beam, bilateral twin beams, bilateral four beams, four Bian Siliang, four limit eight beams according to different sensitivity, resonance frequency, light boron diffusion pressure drag also can be distributed in other position.In the present invention, piezoresistive pressure sensor part adopts rectangular film design, 4 light boron diffusion pressure drag parallel arrangements, make full use of horizontal piezoresistive effect, such piezoresistive pressure sensor has brachium pontis resistance and is evenly distributed, the good advantage of output linearity degree and consistance, certainly,, according to different sensitivity needs, light boron diffusion pressure drag can adopt different distribution modes.
It should be noted that, the present invention not parameter such as the cantilever beam structure size to Sensor section, diaphragm size, pressure drag number, pressure drag size and arranged distribution limits, also the technological parameter of manufacturing process of the present invention is not limited, and this embodiment is only illustrative, the present invention is not done to any restriction.
Claims (10)
1. piezoresistance type acceleration, a pressure integrated sensor, it is characterized in that described sensor simultaneously integrated piezoresistance type acceleration sensor and piezoresistive pressure sensor, and there is first key combined glass glass-silica-based the-second bonding glass sandwich structure; Described silica-based inside is formed with piezoresistance type acceleration sensor semi-girder and piezoresistive pressure sensor diaphragm, silica-based front is formed with two pressure drag regions, is respectively the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor; The pressure drag region of described piezoresistance type acceleration sensor is positioned at the upper surface root of piezoresistance type acceleration sensor semi-girder, and is injected with 4 light boron diffusion pressure drags of light boron formation, and the inside of simultaneously light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The pressure drag region of described piezoresistive pressure sensor is positioned at the upper surface of piezoresistive pressure sensor diaphragm, be also injected with light boron and form 4 light boron diffusion pressure drags, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The top in two described pressure drag regions deposits silicon dioxide layer, silicon dioxide layer top deposits the first silicon nitride layer, described silicon dioxide layer together with the first silicon nitride layer as insulating passivation layer, described insulating passivation layer has fairlead, utilize plain conductor to be communicated with two pressure drag regions, and 4 light boron diffusion pressure drags in piezoresistance type acceleration sensor pressure drag region form Hui Sidun full-bridge by plain conductor and connect, 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region also form Hui Sidun full-bridge by plain conductor and connect; The top of described plain conductor deposits the second silicon nitride layer, the top of described the second silicon nitride layer deposits amorphous silicon layer, described amorphous silicon and first key combined glass glass anode linkage, and, utilize amorphous silicon as step, after described amorphous silicon and first key combined glass glass bonding, form a vacuum cavity, be communicated with piezoresistance type acceleration sensor and piezoresistive pressure sensor; The described silica-based back side and the second bonding glass anode linkage, the second described bonding glass is with air hole, and described air hole is positioned at the below of piezoresistive pressure sensor diaphragm; Described silica-based front is also formed with dense boron wire, and the top of described dense boron wire is connected with metal pin, and dense boron wire is communicated with working sensor district with metal pin.
2. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, the arrangement mode that it is characterized in that the light boron diffusion pressure drag in described piezoresistance type acceleration sensor pressure drag region and the light boron diffusion pressure drag in piezoresistive pressure sensor pressure drag region is: longitudinally along silica-based (1,1,0) crystal orientation direction, laterally along silica-based (1,-1,0) crystal orientation direction distributes, and longitudinally piezoresistance coefficient, horizontal piezoresistance coefficient are respectively 71.8 ,-66.3.
3. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterized in that described piezoresistance type acceleration sensor designs for double cantilever beam, the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region is 4 groups, every group is made up of two parallel light boron diffusion pressure drags, wherein two groups are symmetrically distributed in the region of stress concentration of semi-girder root to the light boron diffusion of brachium pontis pressure drag, and other two groups of light boron diffusion pressure drags are symmetrically distributed in zero stress district.
4. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, is characterized in that described piezoresistive pressure sensor adopts rectangular film design, 4 light boron diffusion pressure drag parallel arrangements in piezoresistive pressure sensor pressure drag region.
5. piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterized in that described metal pin has 7, the first pin connect piezoresistive pressure sensor output just, the second pin ground connection, three-prong connects that piezoresistive pressure sensor output is negative, the 4th pin connects positive source, the 5th pin connects that piezoresistance type acceleration sensor output is negative, the 6th pin ground connection, the 7th pin connect piezoresistance type acceleration sensor and just exporting, piezoresistive pressure sensor and piezoresistance type acceleration sensor common source positive pole.
6. the piezoresistance type acceleration as described in claim 1～5, pressure integrated sensor, it is characterized in that described silica-based be N-shaped (100) silicon chip.
7. the piezoresistance type acceleration as described in claim 1～5, pressure integrated sensor, is characterized in that the thickness of the amorphous silicon of the second described silicon nitride layer top deposition is 2～4 μ m.
8. the manufacture method of piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, the manufacture method described in it is characterized in that is carried out as follows:
A) the long layer of silicon dioxide protective seam of hot oxygen in silica-based front, front photoresist goes out the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor as mask lithography, then inject light boron in two pressure drag regions respectively, form light boron diffusion pressure drag, remove photoresist;
B) front photoresist is made mask and is made territory, concentrated boron area by lithography in light boron diffusion pressure drag region, then injects dense boron, in the inner dense boron ohmic contact regions that forms of light boron diffusion pressure drag, removes photoresist, annealing;
C) first double-sided deposition silicon dioxide layer, then double-sided deposition silicon nitride layer, positive silicon dioxide layer together with silicon nitride layer as insulating passivation layer, front photoresist goes out fairlead as mask lithography, dry method RIE etching insulating passivation layer, to silica-based end face, is removed photoresist, forms fairlead;
D) front plated metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion does not have the metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin;
E) positive deposition one deck silicon nitride covering metal wire, the isolation external world and circuit, front photoresist goes out a point film trap figure as mask lithography, and dry method RIE etch silicon nitride layer, silicon dioxide layer, to silica-based end face, are removed photoresist;
F) positive deposition one deck amorphous silicon, directly contacts with silica-based end face at a point film trap region amorphous silicon;
G) front photoresist goes out working sensor region and metal pin regional graphics as mask lithography, and RIE etching amorphous silicon, to silicon nitride layer, is removed photoresist;
H) front photoresist goes out metal pin regional graphics as mask lithography, and RIE etch silicon nitride, to metal pin layer, is removed photoresist;
I) back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitride, silicon dioxide are to silica-based bottom surface, remove photoresist, silicon nitride layer, silicon dioxide layer are made the silica-based formation piezoresistance type acceleration sensor of mask wet etching, piezoresistive pressure sensor film;
J) the remaining silicon nitride in the dry method RIE etching back side, silicon dioxide are to silica-based bottom surface, and silicon-glass anodic bonding is carried out at the back side;
K) front photoresist goes out semi-girder release profiles as mask lithography, and DRIE carves the cantilever beam structure of wearing silicon nitride, silicon dioxide, silica-based formation piezoresistance type acceleration sensor, removes photoresist, and amorphous silicon-glass anodic bonding is carried out in front;
L) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry, and metal pin top glass is removed in scribing for the first time, and structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
9. the manufacture method of piezoresistance type acceleration as claimed in claim 8, pressure integrated sensor, it is characterized in that the technological parameter that during step j), silicon-glass anodic bonding is carried out at the back side is: voltage 300～500V, electric current 15～20mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 5～10min.
10. the manufacture method of piezoresistance type acceleration as claimed in claim 8, pressure integrated sensor, it is characterized in that the technological parameter that during step k), amorphous silicon-glass anodic bonding is carried out in front is: voltage 450～1000V, electric current 15～25mA, 300～400 DEG C of temperature, pressure 2000～3000N, time 15～25min.
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