CN110127597A - Dorsal pore lead type pressure sensor and preparation method thereof - Google Patents
Dorsal pore lead type pressure sensor and preparation method thereof Download PDFInfo
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- CN110127597A CN110127597A CN201910515256.9A CN201910515256A CN110127597A CN 110127597 A CN110127597 A CN 110127597A CN 201910515256 A CN201910515256 A CN 201910515256A CN 110127597 A CN110127597 A CN 110127597A
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- 239000011148 porous material Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 138
- 229910000679 solder Inorganic materials 0.000 claims description 36
- 230000007704 transition Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 229910008045 Si-Si Inorganic materials 0.000 claims description 7
- 229910006411 Si—Si Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 12
- 230000002411 adverse Effects 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000012544 monitoring process Methods 0.000 abstract description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- 239000002184 metal Substances 0.000 description 3
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- 230000008901 benefit Effects 0.000 description 2
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- 239000011147 inorganic material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Abstract
The present invention provides a kind of dorsal pore lead type pressure sensor and preparation method thereof, prepares pressure sensor using through-hole lead technology, realizes and encapsulate without routing patch, reduce the package dimension of pressure sensor；The pressure drag of pressure sensor is located in seal chamber simultaneously, and conductive pad is electrically connected also by through-hole with external structure, is affected by the external environment smaller, and device stability is good, can be used for the monitoring of pressure in liquid or adverse circumstances.
Description
Technical field
The present invention relates to microelectromechanical systems and art of pressure sensors more particularly to a kind of dorsal pore lead type pressure to pass
Sensor and preparation method thereof.
Background technique
With the development of micro electro mechanical system (MEMS) technology, the manufacture of pressure sensor has become a more mature technology.
Pressure sensor can be divided into pressure resistance type, condenser type, piezoelectric type etc., and wherein piezoresistive pressure sensor is due to small in size, clever
The advantages that sensitivity is high, the linearity is good, be applied to aviation, navigation, petrochemical industry, dynamic power machine, biomedical engineering, meteorology,
The every field such as geology, seismic survey.
The common manufacturing method of piezoresistive pressure sensor is to make pressure drag and electrode in the upper surface of sensitive thin film.It is this
The sensor of method preparation, one of packaged type is the pressure-sensitive of sensitive thin film front, by metallic cords by sensor chip
Electrode and the electrode of support construction (shell) link together, this encapsulation needs metallic cords to be isolated with measured medium, this
Cause encapsulation volume big.Its another kind encapsulation is back side pressure-sensitive, does not need to be isolated with measured medium, but the pressure drag of sensor,
Electrode and metallic cords are all an exposure in external environment, metallic cords easy fracture under the conditions of strong vibration, while device
Not corrosion-resistant, stability is poor.There are also a kind of modes encapsulated using TSV technology, i.e., metal are filled full through-hole and carry out lead, this is logical
The temperature characterisitic that often will lead to sensor is very poor.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of dorsal pore lead type pressure sensor and preparation method thereof,
It can be realized no routing patch encapsulation, reduce the package dimension of pressure sensor, and device stability is good, can be used for liquid
Or in adverse circumstances pressure monitoring.
To solve the above-mentioned problems, the present invention provides a kind of preparation method of dorsal pore lead type pressure sensor, packets
It includes following steps: a device substrate is provided, the first surface of the device substrate is provided with multiple pressure drags and multiple conductive pads, institute
Conductive pad is stated to be electrically connected with the pressure drag；One support substrate is provided, the support substrate have the first surface being oppositely arranged and
The first surface of second surface, the support substrate has a groove, and multiple through-holes are from the first surface to second table
The support substrate is run through in face；Using the first surface of the device substrate and the first surface of the support substrate as bonding face,
The device substrate is bonded with the support substrate, the first surface of the groove and the device substrate forms a sealing
Chamber, the pressure drag is corresponding with the seal chamber, and the through-hole is corresponding with the conductive pad, and the through-hole exposes the conduction
Pad；The support substrate second surface formed multiple electrodes, the electrode along the through-hole side wall extend and with it is described
Conductive pad electrical connection.
Optionally, before bonding steps, the preparation method further includes following steps: an insulating layer is formed, it is described exhausted
Edge layer covers the first surface of the support substrate, the second surface of the support substrate, the inner surface of the groove and described
The side wall of through-hole；In a bonding step, using the first surface of the upper surface of the insulating layer and the device substrate as bonding face
The device substrate is bonded with the support substrate.
Optionally, include the following steps: in the method that the second surface of the support substrate forms multiple electrodes
The second surface of the support substrate forms an electrode layer, and the electrode layer covers the second surface, described of the support substrate
The side wall of through-hole and the conductive pad；The graphical electrode layer, forms multiple electrodes.
Optionally, include the following steps: in the method that the second surface of the support substrate forms multiple electrodes
Before bonding steps, an electrode layer is formed, the electrode layer covers the second surface of the support substrate and the side of the through-hole
Wall；After the bonding step, the graphical electrode layer, forms multiple initial electrodes；One is formed on the surface of the conductive pad
The conductive pad is electrically connected by conductive transition layer, the conductive transition layer with the initial electrode, the initial electrode with it is described
Conductive transition layer forms the electrode.
Optionally, after forming the electrode step, the preparation method further comprises following steps: forming a resistance
Layer, the solder mask cover the electrode and expose the solder joint that the electrode needs to be electrically connected with external structure.
Optionally, the solder mask extends full of the through-hole or the solder mask along the surface of the electrode.
Optionally, after the step of forming the solder mask, the preparation method further comprises following steps: in institute
One conductive bump of formation at the solder joint of electrode is stated, the conductive bump is for the electrode to be electrically connected with external structure.
The present invention also provides a kind of dorsal pore lead type pressure sensors prepared using above-mentioned preparation method comprising:
One device layer is provided with multiple pressure drags and multiple conductive pads in the device layer, and the conductive pad is electrically connected with the pressure drag；One
Supporting layer is bonded with the device layer, and the supporting layer has a groove and multiple through-holes through the supporting layer, described recessed
Slot and the device layer form a seal chamber, and the pressure drag corresponds to the seal chamber setting, and the conductive pad corresponds to the through-hole
Setting；The surface that the supporting layer is not bonded is arranged in multiple electrodes, and the electrode extends along the side wall of the through-hole, and with
The conductive pad electrical connection.
Optionally, the dorsal pore lead type pressure sensor further includes an insulating layer, and the insulating layer is arranged in the electricity
Between pole and the supporting layer.
Optionally, the dorsal pore lead type pressure sensor further includes a conductive transition layer, the conductive transition layer setting
On the conductive pad surface, the electrode is electrically connected by the conductive transition layer with the conductive pad.
Optionally, the dorsal pore lead type pressure sensor further includes a solder mask, and the solder mask covers the electrode
And expose the solder joint that the electrode needs to be electrically connected with external structure.
Optionally, the solder mask extends full of the through-hole or the solder mask along the surface of the electrode.
Optionally, the dorsal pore lead type pressure sensor further includes multiple conductive bumps, and the conductive bump setting exists
On the electrode, for the electrode to be electrically connected with external structure.
It is an advantage of the current invention that preparing pressure sensor using through-hole lead technology, realizes and encapsulated without routing patch, subtracted
The small package dimension of pressure sensor；The pressure drag of pressure sensor is located in seal chamber simultaneously, conductive pad also by through-hole and
External structure electrical connection, is affected by the external environment smaller, device stability is good, can be used for the prison of pressure in liquid or adverse circumstances
It surveys.
Detailed description of the invention
The step of Fig. 1 is the first specific embodiment of the preparation method of dorsal pore lead type pressure sensor of the present invention signal
Figure；
Fig. 2A~Fig. 2 H is the first specific embodiment of the preparation method of dorsal pore lead type pressure sensor of the present invention
Process flow chart；
Fig. 3 A~Fig. 3 D is the process flow chart that device substrate is formed in the first specific embodiment；
Fig. 4 is that resistance is formed in the second specific embodiment of the preparation method of dorsal pore lead type pressure sensor of the present invention
The process flow chart of layer；
Fig. 5 A~Fig. 5 D is the third specific embodiment in the preparation method of dorsal pore lead type pressure sensor of the present invention
The middle process flow chart for forming electrode；
Fig. 6 is the structural schematic diagram of the first specific embodiment of dorsal pore lead type pressure sensor；
Fig. 7 is the structural schematic diagram of the second specific embodiment of dorsal pore lead type pressure sensor；
Fig. 8 is the structural schematic diagram of the third specific embodiment of dorsal pore lead type pressure sensor.
Specific embodiment
With reference to the accompanying drawing to the specific implementation of dorsal pore lead type pressure sensor provided by the invention and preparation method thereof
Mode elaborates.
The step of Fig. 1 is the first specific embodiment of the preparation method of dorsal pore lead type pressure sensor of the present invention signal
Figure.Referring to Fig. 1, the preparation method includes the following steps: step S10, a device substrate is provided, the of the device substrate
One surface is provided with multiple pressure drags and multiple conductive pads, and the conductive pad is electrically connected with the pressure drag；Step S11 provides one
Substrate is supportted, the support substrate has the first surface and second surface being oppositely arranged, the first surface tool of the support substrate
There is a groove, multiple through-holes run through the support substrate from the first surface to the second surface；Step S12, with described
The first surface of device substrate and the first surface of the support substrate are bonding face, and the device substrate and the support are served as a contrast
The first surface of bottom bonding, the groove and the device substrate forms a seal chamber, and the pressure drag is corresponding with the seal chamber,
The through-hole is corresponding with the conductive pad, and the through-hole exposes the conductive pad；Step S13, the of the support substrate
Two surfaces form multiple electrodes, and the electrode extends along the side wall of the through-hole and is electrically connected with the conductive pad.
Fig. 2A~Fig. 2 H is the first specific embodiment of the preparation method of dorsal pore lead type pressure sensor of the present invention
Process flow chart.
Step S10 and Fig. 2A are please referred to, a device substrate 200 is provided, the first surface 200A of the device substrate 200 is set
It is equipped with multiple pressure drags 201 and multiple conductive pads 202, the conductive pad 202 is electrically connected with the pressure drag 201.
In this embodiment, the method for forming the device substrate 200 includes the following steps:
Fig. 3 A is please referred to, one first substrate 300 is provided, first substrate 300 has a first surface 300A, and one first
Insulating layer 301 covers the first surface 300A of first substrate 300.First substrate 300 includes but is not limited to monocrystalline silicon
Or SOI piece.If first substrate 300 is soi wafer, the upper layer silicon thickness of the SOI piece needs to meet just sensitive thin
The thickness requirement of film.First insulating layer 301 can be formed by thermal oxidation technology, can be in the technique for being subsequently formed pressure drag
Reduce the channelling effect of ion implanting.
Fig. 3 B is please referred to, forms multiple pressure drags 201 and multiple and institute on the first surface 300A of first substrate 300
State the dense boron conducting wire 302 of the electrical connection of pressure drag 201, wherein the pressure drag 201 is light boron pressure drag.The light boron pressure in this step
Resistance 302 and the dense boron conducting wire 302 can be made by photoetching, ion implantation technology.The pressure drag 201 is that light boron diffuses to form
Strain pressure drag, the dense boron conducting wire 302 is the dense boron ohmic contact regions that the dense boron of injection is formed.In this embodiment,
Four pressure drags 201 (two pressure drags 201 are painted in attached drawing) form Wheatstone bridge by the connection of dense boron conducting wire 302.In this hair
In other bright specific embodiments, eight pressure drags 201 can also be used.
Fig. 3 C is please referred to, graphical first insulating layer 301, to form multiple open on first insulating layer 301
Mouth 301A, the opening 301A expose the surface of the dense boron conducting wire 302.In this step, photoetching and etching work can be used
Skill forms the opening 301A.
Fig. 3 D is please referred to, forms multiple conductive pads 202, the conductive pad 202 and the dense boron at the opening 301A
Conducting wire 302 is electrically connected, and then forms the device substrate 200.In this step, the conductive pad 202 is metal, can be through splashing
It penetrates or deposits, the technique of photoetching and etching, wet etching or dry etching is made.In other specific embodiments of the invention
In, the conductive pad 202 can also be polysilicon, can be formed by doping process.
Optionally, in other specific embodiments of the invention, one can also be re-formed after forming the conductive pad 202
Passivation layer (is not painted) in attached drawing, and the conductive pad is exposed to the passivation layer.In this step, one layer of passivation can first be deposited
Layer, then the conductive pad is exposed using photoetching and etching technics.The passivation layer can be used for protecting the conductive pad 202 and institute
Stating passivation layer can be used as the bonded layer of subsequent bonding.In this embodiment, the not formed passivation layer.
Step S11 and Fig. 2 B is please referred to, a support substrate 210 is provided, the support substrate 210 has the be oppositely arranged
One surface 210A and second surface 210B.The support substrate 210 includes but is not limited to silicon substrate, glass substrate etc..In this tool
In body embodiment, the support substrate 210 is the silicon wafer with a thickness of 400 microns, in other specific embodiments of the invention,
The thickness of the support substrate 210 can also be not limited to 400 microns.
The first surface 210A of the support substrate 210 has a groove 211.In this step, photoetching and quarter can be used
Etching technique forms the groove 211 in the first surface 210A of the support substrate 210.It is understood that the groove 211
Do not run through the support substrate 210.The shape of the groove 211 includes but is not limited to rectangle, circle or polygon.
Multiple through-holes 212 run through the support substrate 210 from the first surface 210A to the second surface 210B.?
In present embodiment, photoetching and etching technics can be carried out to the second surface 210B of the support substrate 210 and form institute
State through-hole 212.Further, the through-hole 212 is located at the outside of the groove 211, i.e., multiple through-holes 212 are around described recessed
Slot 211 is arranged.The quantity of the through-hole 212 can be corresponding with the quantity of the conductive pad 202.The shape of the through-hole 212 includes
But it is not limited to rectangle, circle or polygon.
Optionally, further include the steps that one second insulating layer 213 of a formation in this embodiment.Please refer to figure
2C, forms a second insulating layer 213, and the second insulating layer 213 covers the first surface 210A of the support substrate 210, institute
State the side wall of the second surface 210B of support substrate 210, the inner surface of the groove 211 and the through-hole 212.In the step
In, thermal oxide can be used or LPCVD technique forms the second insulating layer 213.The effect of the second insulating layer 213 is
By electrode insulation support substrate 210 and be subsequently formed.It is understood that if the support substrate 210 is nonisulated
Substrate then needs to form the second insulating layer；If the support substrate 210 is insulating substrate, described second can not be formed
Insulating layer.Specifically, in this embodiment, the support substrate 210 is silicon substrate, then described second is needed to form
Insulating layer 213 insulate electrode and the support substrate 210；In another specific embodiment of the present invention, the support lining
Bottom is glass substrate, since glass substrate itself has insulation characterisitic, then can not form the second insulating layer.
Step S12 and Fig. 2 D is please referred to, with the first surface 200A and the support substrate 210 of the device substrate 200
First surface 210A be bonding face, the device substrate 200 is bonded with the support substrate 210.In this specific embodiment party
In formula, using the upper surface of first insulating layer 301 and the upper surface of the second insulating layer 213 as bonding face, by the device
Part substrate 200 is bonded with the support substrate 210.
In this step, the bonding technology of the device substrate 200 and the support substrate 210 includes but is not limited to low temperature
Si-Si melting bonding, high temperature Si-Si melting bonding and Si-Glass anode linkage.Specifically, in present embodiment
In, the conductive pad 202 is metallic aluminium, then the bonding technology of the device substrate 200 and the support substrate 210 is low temperature
Si-Si melting bonding, bonding temperature are no more than 660 DEG C of fusing point of the conductive pad 202；In another specific embodiment party of the present invention
In formula, the conductive pad 202 is polysilicon, then the bonding technology of the device substrate 200 and the support substrate 210 is high temperature
Si-Si melting bonding, bonding temperature are no more than 1410 DEG C of fusing point of the conductive pad 202；In another specific implementation of the invention
In mode, the conductive pad 202 is polysilicon, and the support substrate 210 is glass substrate, then the device substrate 200 and institute
The bonding technology for stating support substrate 210 is Si-Glass anode linkage.
After the device substrate 200 is bonded with the support substrate 210, the groove 211 and the device substrate 200
First surface 200A formed a seal chamber 220.In this embodiment, the groove 211 and first insulating layer
301 upper surface forms the seal chamber 220.The pressure drag 201 is corresponding with the seal chamber 220, i.e., the described pressure drag 201 is located at
In the drop shadow spread of the seal chamber 220.The through-hole 212 is corresponding with the conductive pad 202, and the through-hole 212 exposes institute
Conductive pad 202, the i.e. direction from the second surface 210B of the support substrate 210 are stated, is able to observe that the conductive pad 202.
It optionally, further include one by the device substrate 200 and the support substrate 210 before carrying out bonding steps
The step of contraposition.The effect of the step is, guarantees that the pressure drag 201 is corresponding with the seal chamber 220, the through-hole 212 with
The conductive pad 202 is corresponding.It optionally, further include the surface of the polishing device substrate 200 before carrying out bonding steps
The step of.In this embodiment, due to the surface that the bonding face of the device substrate 200 is the first insulating layer 301, then
Before carrying out bonding steps, first insulating layer 301 on 200 surface of device substrate is polished, so that its flatness meets key
Conjunction demand.
Optionally, Fig. 2 E is please referred to, in this embodiment, after the completion of bonding steps, from the device substrate
200 surface opposite with the first surface 200A starts that the device substrate 200 is thinned and is polished.Be thinned and
The thickness of the device substrate 200 can be decreased to several microns after the completion of polishing process.If the device substrate 200 is SOI piece,
It first carries out thinned, is thinned to close to the SiO among SOI piece2When layer, wet etching falls SiO2, obtain top layer Si film.
Step S13 and Fig. 2 F is please referred to, forms multiple electrodes 230, institute in the second surface 210B of the support substrate 210
Electrode 230 is stated to extend along the side wall of the through-hole 212 and be electrically connected with the conductive pad 202.In this embodiment, shape
At the specific steps of the electrode 230 are as follows: it is (attached to form an electrode layer in the second surface 210B of the support substrate 210 first
It is not painted in figure), the electrode layer covers the second surface 210B of the support substrate 210, the side wall of the through-hole 212 and institute
State conductive pad 202；Secondly, the graphical electrode layer, forms multiple electrodes 230, wherein photoetching and etching etc. can be used
Graphically the electrode layer forms the electrode 230 to technique.
In this step, the electrode 230 extends along the side wall of the through-hole 212, and is not filled with the through-hole
212.If the electrode 230 is full of the through-hole 212, the temperature characterisitic of sensor can be made to be deteriorated.In present embodiment
In, the second insulating layer 213 is provided between the electrode 230 and the support substrate 210.
Optionally, please refer to Fig. 2 G, after forming 230 step of electrode, the preparation method further comprise as
Lower step: forming a solder mask 240, the solder mask 240 cover the electrode 230 and expose the electrode 230 need with
The solder joint 230A of external structure electrical connection.In this embodiment, the solder mask is organic oligomer, full of described
Through-hole 212, to improve the performance of the sensor.In the second specific embodiment of the invention, referring to Fig. 4, the welding resistance
Layer 240 is the inorganic material such as silicon nitride, silica, silicon oxynitride, is extended along the surface of the electrode 230, i.e., the described welding resistance
Layer 240 covers the electrode 230 in the form of a film.
Optionally, Fig. 2 H is please referred to, forms a conductive bump 250, the conduction at the solder joint 230A of the electrode 230
Convex block 250 is for the electrode 230 to be electrically connected with external structure.In this embodiment, on the solder joint 230A
It carries out planting ball reflux, forms the conductive bump 250.The conductive bump 250 can be with the structures electricity such as external printed circuit board
Connection.
In the first specific embodiment, the electrode 230 is formed after the bonding step, and in third specific embodiment party
In formula, the step of the step of forming electrode is included in the step of carrying out before bonding steps and carries out after the bonding step.Tool
Body is described as follows:
Fig. 5 A is please referred to, after structure chart shown in fig. 2 C, forms an electrode layer 500, the electrode layer 500 covers institute
State the second surface 210B of support substrate 210 and the side wall of the through-hole 212.The material of the electrode layer 500 is polysilicon,
It can be formed by LPCVD technique.
Further, in actual process, the electrode layer 500 also covers the first surface 210A of the support substrate 210
And the inner sidewall of the groove 211 then in this step can remove the first table of the support substrate 210 by etching technics
The electrode layer 500 of the inner sidewall of face 210A and the groove 211, and retain the second surface for covering the support substrate 210
The electrode layer 500 of the side wall of 210B and the through-hole 212.Fig. 5 B is please referred to, with the upper surface of first insulating layer 301 and institute
The upper surface for stating second insulating layer 213 is bonding face, and the device substrate 200 is bonded with the support substrate 210.In the step
In rapid, the bonding technology is high temperature Si-Si melting bonding, and the temperature is no more than 1410 DEG C of fusing point of polysilicon.
Fig. 5 C is please referred to, the graphical electrode layer 500 forms multiple initial electrodes 501.In this step, it can be used
Photoetching and etching technics remove the segment electrode layer 500 on the first surface 210A of the support substrate 210, are formed described initial
Electrode 501.The initial electrode 501 covers the side wall of the through-hole 212 and the portion second surface of the support substrate 210
210B。
Fig. 5 D is please referred to, forms a conductive transition layer 502 on the surface of the conductive pad 202, i.e., in the through-hole 212
The conductive transition layer 502 is formed on bottom.The material of the conductive transition layer 502 includes but is not limited to metal material.It is described to lead
The conductive pad 202 is electrically connected by electric transition zone 502 with the initial electrode 501, i.e., the described initial electrode 501 and the conduction
An electrode 510 is collectively formed in transition zone 502.After forming electrode 510, subsequent step and phase the step of the first specific embodiment
Together, it repeats no more.
In third specific embodiment, the material of the conductive pad 202 and the initial electrode 502 is polysilicon,
If being only directly electrically connected the two, electrical connection properties are bad, poor contact, and in this embodiment, it is described
Conductive transition layer 502 and the conductive pad 202 and the initial electrode 502 are respectively formed Ohmic contact, can reinforce the conduction
Electrical connection properties between pad 202 and the initial electrode 502.
The present invention also provides the specific implementations of the dorsal pore lead type pressure sensor prepared using above-mentioned preparation method
Mode.
Fig. 6 is the structural schematic diagram of the first specific embodiment of dorsal pore lead type pressure sensor.Referring to Fig. 6, institute
Stating dorsal pore lead type pressure sensor includes a device layer 600, a supporting layer 610 and multiple electrodes 620.
Multiple pressure drags 601 and multiple conductive pads 602, the conductive pad 602 and the pressure are provided in the device layer 600
601 electrical connection of resistance.In this embodiment, the pressure drag 601 is light boron pressure drag, and the light boron pressure drag is led by a dense boron
Line 603 is electrically connected with the conductive pad 602.The device layer 600 includes one first substrate 604 and is arranged in first substrate
The first insulating layer 605 on 604, the pressure drag 601 are arranged in first substrate 604.First insulating layer 605 has
Multiple openings (not being painted in attached drawing), in the opening, i.e., the described conductive pad 602 is exposed to institute for the setting of conductive pad 602
It states except the first insulating layer 605.
The supporting layer 610 is bonded with the device layer 600.The supporting layer 610 has a groove 611 and multiple runs through
The through-hole 612 of the supporting layer 610.The groove 611 forms a seal chamber 630, the pressure drag 601 with the device layer 600
The corresponding seal chamber 630 is arranged.The corresponding through-hole 612 of the conductive pad 602 is arranged, i.e., the described through-hole 612 exposes institute
State conductive pad 602.
The surface that the supporting layer 610 is not bonded is arranged in the electrode 620, and the electrode 620 is along the through-hole 612
Side wall extend, and be electrically connected with the conductive pad 602.The electrode 620 extends along the side wall of the through-hole 612, and is not
It is filled with the through-hole 612.If the electrode 620 is full of the through-hole 612, the temperature of dorsal pore lead type pressure sensor can be made
Characteristic is deteriorated.
In this embodiment, the dorsal pore lead type pressure sensor further includes second insulating layer 640, and described
Two insulating layers 640 are arranged between the electrode 620 and the supporting layer 610.Further, the second insulating layer 640 is not only
It is arranged between the electrode 620 and the supporting layer 610, also covers 610 all surfaces of supporting layer, the groove
The side wall of 611 inner sidewall and the through-hole 612.
Further, the dorsal pore lead type pressure sensor further includes a solder mask 650, and the solder mask 650 covers institute
It states electrode 620 and exposes the solder joint 620A that the electrode 620 needs to be electrically connected with external structure.In present embodiment
In, the solder mask 650 is full of the through-hole 612, to improve the performance of the sensor.In the second specific embodiment party of the invention
In formula, referring to Fig. 7, the solder mask 650 is the inorganic material such as silicon nitride, silica, silicon oxynitride, along the electrode
620 surface extends, i.e., the described solder mask 650 covers the electrode 620 in the form of a film.
Further, in this embodiment, the dorsal pore lead type pressure sensor further includes multiple conductive bumps
660, the conductive bump 660 is arranged on the solder joint 620A of the electrode 620, is used for the electrode 620 and external structure
Electrical connection.
Fig. 8 is the structural schematic diagram of the third specific embodiment of dorsal pore lead type pressure sensor of the present invention.It please refers to
Fig. 8, third specific embodiment and the first specific embodiment the difference is that, the dorsal pore lead type pressure sensor is also
Including a conductive transition layer 800.The conductive transition layer 800 is arranged on 602 surface of conductive pad, and the electrode 620 passes through
The conductive transition layer 800 is electrically connected with the conductive pad 602.In this embodiment, the conductive pad 602 and described
Electrode 620 is polysilicon, and the conductive transition layer 800 is metal.The electrode 620 is not extended to the conductive pad 602, and
It is to be connect by the conductive transition layer 800 with the conductive pad 602, further improves the conductive pad 602 and the electricity
The switching performance of pole 620.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (14)
1. a kind of preparation method of dorsal pore lead type pressure sensor, which comprises the steps of:
A device substrate is provided, the first surface of the device substrate is provided with multiple pressure drags and multiple conductive pads, the conduction
Pad is electrically connected with the pressure drag；
A support substrate is provided, the support substrate has the first surface and second surface being oppositely arranged, the support substrate
First surface have a groove, multiple through-holes from the first surface to the second surface run through the support substrate；
Using the first surface of the device substrate and the first surface of the support substrate as bonding face, by the device substrate with
The first surface of support substrate bonding, the groove and the device substrate forms a seal chamber, the pressure drag with it is described
Seal chamber is corresponding, and the through-hole is corresponding with the conductive pad, and the through-hole exposes the conductive pad；
The support substrate second surface formed multiple electrodes, the electrode along the through-hole side wall extend and with it is described
Conductive pad electrical connection.
2. preparation method according to claim 1, which is characterized in that before bonding steps, the preparation method is also wrapped
Include following steps:
Form an insulating layer, the insulating layer cover the first surface of the support substrate, the support substrate second surface,
The side wall of the inner surface of the groove and the through-hole；
It in a bonding step, is bonding face by the device using the first surface of the upper surface of the insulating layer and the device substrate
Part substrate is bonded with the support substrate.
3. preparation method according to claim 1, which is characterized in that formed in the second surface of the support substrate multiple
The method of the electrode includes the following steps:
An electrode layer is formed in the second surface of the support substrate, the electrode layer covers the second table of the support substrate
Face, the through-hole side wall and the conductive pad；
The graphical electrode layer, forms multiple electrodes.
4. preparation method according to claim 1, which is characterized in that formed in the second surface of the support substrate multiple
The method of the electrode includes the following steps:
Before bonding steps, an electrode layer is formed, the electrode layer covers the second surface of the support substrate and described logical
The side wall in hole；
After the bonding step, the graphical electrode layer, forms multiple initial electrodes；
A conductive transition layer is formed on the surface of the conductive pad, the conductive transition layer is by the conductive pad and the initial electricity
Pole electrical connection, the initial electrode and the conductive transition layer form the electrode.
5. preparation method described in any one according to claim 1~4, which is characterized in that formed the electrode step it
Afterwards, the preparation method further comprises following steps:
A solder mask is formed, the solder mask covers the electrode and exposes what the electrode needed to be electrically connected with external structure
Solder joint.
6. preparation method according to claim 5, which is characterized in that the solder mask is full of the through-hole or described
Solder mask extends along the surface of the electrode.
7. preparation method according to claim 5, which is characterized in that described after the step of forming the solder mask
Preparation method further comprises following steps:
A conductive bump is formed at the solder joint of the electrode, the conductive bump is for the electrode to be electrically connected with external structure
It connects.
8. preparation method according to claim 1, which is characterized in that the device substrate to be bonded with the support substrate
Method be low temperature Si-Si melting bonding, high temperature Si-Si melting bonding or Si- glass anode linkage.
9. a kind of dorsal pore lead type pressure sensor prepared using preparation method described in claim 1~8 any one,
It is characterized in that, comprising:
One device layer is provided with multiple pressure drags and multiple conductive pads in the device layer, and the conductive pad is electrically connected with the pressure drag
It connects；
One supporting layer is bonded with the device layer, and the supporting layer has a groove and multiple through-holes through the supporting layer,
The groove and the device layer form a seal chamber, and the pressure drag corresponds to the seal chamber setting, and the conductive pad corresponds to institute
State through-hole setting；
Multiple electrodes, are arranged in the surface that the supporting layer is not bonded, and the electrode extends along the side wall of the through-hole, and with institute
State conductive pad electrical connection.
10. dorsal pore lead type pressure sensor according to claim 9, which is characterized in that the dorsal pore lead type pressure
Sensor further includes an insulating layer, and the insulating layer is arranged between the electrode and the supporting layer.
11. dorsal pore lead type pressure sensor according to claim 9, which is characterized in that the dorsal pore lead type pressure
Sensor further includes a conductive transition layer, and on the conductive pad surface, the electrode passes through described for the conductive transition layer setting
Conductive transition layer is electrically connected with the conductive pad.
12. according to dorsal pore lead type pressure sensor described in claim 9~11 any one, which is characterized in that the back
Wire through substrate formula pressure sensor further includes a solder mask, the solder mask cover the electrode and expose the electrode need with
The solder joint of external structure electrical connection.
13. dorsal pore lead type pressure sensor according to claim 12, which is characterized in that the solder mask is full of described
Through-hole or the solder mask extend along the surface of the electrode.
14. according to dorsal pore lead type pressure sensor described in claim 9~11 any one, which is characterized in that the back
Wire through substrate formula pressure sensor further includes multiple conductive bumps, and on the electrodes, being used for will be described for the conductive bump setting
Electrode is electrically connected with external structure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910515256.9A CN110127597A (en) | 2019-06-14 | 2019-06-14 | Dorsal pore lead type pressure sensor and preparation method thereof |
| PCT/CN2019/112934 WO2020248466A1 (en) | 2019-06-14 | 2019-10-24 | Back hole lead type pressure sensor and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910515256.9A CN110127597A (en) | 2019-06-14 | 2019-06-14 | Dorsal pore lead type pressure sensor and preparation method thereof |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910515256.9A Pending CN110127597A (en) | 2019-06-14 | 2019-06-14 | Dorsal pore lead type pressure sensor and preparation method thereof |
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| CN (1) | CN110127597A (en) |
| WO (1) | WO2020248466A1 (en) |
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| CN112510144A (en) * | 2021-02-03 | 2021-03-16 | 南京高华科技股份有限公司 | Pressure sensor with stress reinforcing ribs and preparation method thereof |
| CN113140638A (en) * | 2021-03-18 | 2021-07-20 | 沈阳仪表科学研究院有限公司 | Economical silicon pressure sensor chip and processing method |
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