CN107445137B - A kind of MEMS chip encapsulating structure production method for being inverted assembly - Google Patents
A kind of MEMS chip encapsulating structure production method for being inverted assembly Download PDFInfo
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
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Abstract
The invention discloses a kind of MEMS chip encapsulating structure production methods for being inverted assembly, and anchor point structure and sensitive structure cavity are processed on the silicon electrode layer of wafer A, processes electrode structure in sensitive structure cavity；The silicon electrode layer of another platelet disk B is bonded on the silicon electrode layer on wafer A using bonding technology；Remove the silicon substrate and silica separation layer of wafer B；Sensitive structure is processed on the silicon electrode layer of wafer B；Silicon cap is bonded on the sensitive structure on wafer B；It is sequentially etched the silicon substrate and silica separation layer of the SOI wafer piece A of removal welding disking area position from the back side SOI wafer piece A, exposes the electrode layer of the SOI wafer piece A of welding disking area, processes metal pad in the manner of sputtering, forms MEMS bare chip；Stress relief grooves are processed on the silicon substrate of wafer A using deep etching technique；Silicon cap is fixed to ceramic cartridge cavity bottom surface by chip upside down, then bond wire lead realizes that the electric signal between metal pad and ceramic cartridge pin connects, and finally uses kovar alloy cover plate for sealing ceramic cartridge.This method packaging technology is simple, does not dramatically increase the advantage of packaging cost, it is easy to accomplish.
Description
Technical field
The present invention relates to a kind of MEMS chip encapsulating structures, belong to MEMS technology field.
Background technique
MEMS(Micro Electro Mechanical System) capacitance sensor have small in size, light weight, power consumption
It the advantages that low, at low cost, is widely used.MEMS capacitance sensor is by measuring the capacitance variations that small sensitive structure is constituted come real
The now measurement of corresponding measured physical quantity.Usual MEMS sensor need to be encapsulated in certain structure, to provide needed for sensor
Electrical connection, mechanical connection and corresponding chemical environment protection etc..
Metal Packaging, Plastic Package and ceramic package are the packing forms of most common three kinds of MEMS chips.Due to ceramics
Encapsulation has the advantages that thermal conductivity, air-tightness are good, thus ceramic package use it is the most extensive.
The encapsulating structure of the MEMS sensor of usual ceramic package is as shown in Figure 1.Traditional MEMS capacitance sensor adds first
Work goes out MEMS sensor bare chip 100, is then fixed in 200 cavity of ceramic cartridge by way of viscose glue or bonding 500.It is naked
Pad on chip is connected with each other with the intracorporal pad of ceramic cartridge chamber by metal lead wire 300, realizes electric signal in shell
Outer mutual transmission.200 cavity of ceramic cartridge is finally sealed using kovar alloy cover board 400.However whether ceramic package is also
Be Metal Packaging also or Plastic Package, it is different from the thermal expansion coefficient of silicon materials that there is encapsulating materials always, therefore temperature
Variation can generate encapsulation stress.Encapsulation stress can precision to sensor and stability have an impact.How encapsulation stress is reduced,
It is the key points and difficulties of high-precision MEMS capacitance sensor design.
Application for a patent for invention " the MEMS inertial sensor encapsulating structure with stress isolation " (application number
201020124304.6) it proposes by being bonded one layer of material identical as sensor substrate between sensor chip and encapsulating package
Stress isolation layer, realize to the stress isolation of MEMS inertial sensor chip.Application for a patent for invention " can reduce encapsulation stress
Packaging structure " (application number 200810083425.8) propose it is a kind of comprising carrier, intermediary substrate, the first sealant and the
A kind of construction of reduction chip package stress of two sealants.This method is close by coating first between chip and intermediary substrate
Sealing, coats the second sealant between intermediary substrate and carrier, and the glass transition temperature of the first sealant is selected to be greater than the
The glass transition temperature of two sealants, realizing reduces encapsulation stress.
Freescale Semiconductor proposes several technological approaches for improving encapsulation stress.Application for a patent for invention " has
Compensate encapsulation stress stress elimination capacitance sensor " (application number 200980119818.2) propose one kind in MEMS capacitor
The end of moving element processes the line of rabbet joint extended towards rotary shaft in formula sensor, realizes that compensation encapsulation stress improves sensors
The purpose of energy.Application for a patent for invention " reducing the semiconductor devices to the sensibility of encapsulation stress " (application number
200980120339.2) proposing through differential capacitive energy converter includes that element is arranged symmetrically and by the fixed position for referring to anchor
The foundation for setting the anchoring area domain of definition is located in the anchoring area domain for displaceable element or the suspension anchor for detecting mass block, can be with
The nonlinear component of displacement is effectively eliminated, and then reduces the influence that encapsulation stress exports sensor.Application for a patent for invention " tool
Have the MEMS device of the central anchor for stress isolation " it proposes to substantially reduce element to base by device compared with the existing technology
The connection of plate and by make these connection be located at each other very close in the range of and at the central part of substrate, realization subtracts
The purpose of small stress.
A kind of application for a patent for invention " floated force-sensing sensor chip and preparation method thereof for eliminating encapsulation stress " (application
Number 201210333367.6) and application for a patent for invention " encapsulation stress and the self-compensating dual suspension force-sensing sensor chip of temperature drift and
Preparation method " (application number 201310234503.0) be using it is a kind of design and manufacturing process pressure sensor is integrated in it is outstanding
On arm girder construction band, the mechanical characteristic of cantilever tail beam freedom of movement structure is sufficiently relied on, the pressure sensor on cantilever beam is made
Chip exterior encapsulation stress can be effectively inhibited to adversely affect to force-sensing sensor performance bring.
Application for a patent for invention " a kind of accelerometer and its manufacturing process " (application number 201210356535.3) and invention are special
Benefit application " a kind of accelerometer and its manufacturing process " (application number 201210356922.7) proposes that the mass block of accelerometer is logical
It crosses different spring beams to be connected with frame, frame is being connected by four cantilever beams with movable limit body, to realize knot
The encapsulation stress of structure is isolated.
Application for a patent for invention " chip attachment stress isolation " (application number 201310016701.X) proposition is used for using one kind
The stress isolation bracket of micro-structured devices comprising bracket base and have the first bracket arm and the second bracket arm, the first support
Boom is used to be attached to micro-structured devices and first mounting surface inward-facing relative to the channel, the second bracket arm are opposite
The second mounting surface of the encapsulation for accommodating micro-structured devices is attached to towards externally in the channel.
Application for a patent for invention " passing through the back-patterned method for reducing MEMS chip encapsulation stress " (application number
201310140175.8) it proposes to perform etching the back layer of MEMS chip as the film that salts down is etched by photoetching offset plate figure, be formed
Load column.Bonding die glue is coated on the bottom plate of encapsulating package, and the MEMS chip with load column is fixed on envelope by load column
On the shell bottom plate of tubulature, and then realize the purpose for reducing encapsulation stress.
Application for a patent for invention " a kind of MEMS sensor encapsulating structure and its packaging method " (application number
201410183524.9) propose to select with the close ceramic bases of MEMS sensor material thermal expansion coefficient as encapsulating material,
Realize the influence for reducing pedestal swelling stress to MEMS sensor.Application for a patent for invention " the encapsulating structure and envelope of MEMS sensor
Dress method " thermal expansion coefficient and silicon close spy of (application number 201510441722.5) proposition using silicon nitride ceramic material
Point selects pedestal of the silicon nitride ceramics as package of MEMS sensor chip, realizes the purpose for reducing encapsulation stress.
A kind of application for a patent for invention " pressure sensor of the insulation package stress based on Si-Si bonding " (application number
201410306360.4) and application for a patent for invention " it is a kind of based on Si-Si bonding reduction encapsulation stress micro-mechanical gyroscope "
(application number 201410816214.6) is to propose in the convex block that support layer surface etches one piece for Si-Si bonding, will be sensed
Device chip is fixed on the convex block of support layer surface by Si-Si bonding.By reduce bonding area and deep plough groove etched reduction because
Material thermal expansion coefficient mismatches and the thermal stress of generation.
Application for a patent for invention " a kind of MEMS device thermal stress isolation structure " (application number 201410465729.6) proposes
A kind of MEMS device thermal stress isolation structure.The structure quadrangle is respectively equipped with a raised bonding face and MEMS device substrate silicon
Silicon bonding, heat insulation structural middle part form the cavity of perforation, and criss-cross and perforation radiating groove is equipped in cavity.By using this
Thermal stress isolation structure can reduce influence of the encapsulation stress to MEMS device.
Application for a patent for invention " a kind of LCC encapsulation stress discharge structure " (application number 201410720844.3) propose it is a kind of with
The LCC encapsulation stress of chip form fit discharges structure.The structure setting anchor point and supporting point, pass through between anchor point and supporting point
Attachment beam connection.The thermal stress that LCC encapsulation passes to chip can be effectively reduced with this configuration.
Application for a patent for invention " manufacturing method and its MEMS chip of the MEMS chip insensitive to encapsulation stress " (application number
201510114611.3) propose the insensitive MEMS chip manufacturing method of a kind of pair of encapsulation stress.It is produced using this method
Lower electrode and MEMS bascule be sealed in a seal chamber, and the contact of lower electrode and MEMS bascule with bottom plate
Area is all very small, therefore only some thermal stress is transmitted on lower electrode and MEMS bascule.
Application for a patent for invention " a kind of MEMS device and preparation method thereof " (application number 201510365845.5) proposition passes through
An independent isolation structure is added in MEMS device lower part to realize the purpose for reducing thermal stress.
Application for a patent for invention " a kind of preparation method of low stress accelerometer " (application number 201510661783.2) proposes
The fixed electrode structure of tradition is changed into the clamped suspension electrode structure of both-end, so that thermal stress is under the influence substantially of electrode structure
Drop, to realize the purpose for improving the full warm nature energy of accelerometer.
Application for a patent for invention " encapsulating structure and packaging method of MEMS chip " (application number 201610046817.1) proposes
MEMS chip is fixed in encapsulating structure with pin configuration, makes it vacantly inside encapsulating structure, is not contacted with package substrate,
To stress caused by thorough insulation package.
Patent of invention " the MEMS inertial sensor encapsulating structure with stress isolation " " can reduce the encapsulation of encapsulation stress
Construction ", " chip attachment stress isolation ", " a kind of pressure sensor of the insulation package stress based on Si-Si bonding ", " a kind of
MEMS device thermal stress isolation structure ", " a kind of MEMS device and preparation method thereof " etc. be to increase under existing MEMS bare chip
Add one layer of special isolation structure to realize the influence for reducing encapsulation stress to chip deformation, the disadvantages of the method are as follows needing additional
Increase by one layer of structure sheaf, therefore will increase the overall thickness of device.Patent of invention " is encapsulated by back-patterned reduction MEMS chip
The method of stress " although using etching technics has processed special graphic structure in chip back, reduce chip and envelope
The contact area of dress, but chip bottom remains the problem of multiple location is fixedly connected with shell, it is multipoint to be fixedly connected
Thermal stress can be still generated, the deformation of chip is caused.Patent of invention " encapsulating structure and packaging method of MEMS chip " is using gold
Belong to lead chip is suspended in package cavity body, be subsequently filled the retardance filler of electrical isolation, finally sealed encapsulates cavity.It is lacked
Point is that encapsulation cavity and retardance filler need specific customization, increases processing complexity and cost.
Summary of the invention
To solve problems of the prior art, this patent provides a kind of upside-down mounting and with strain relief
MEMS chip encapsulating structure production method.
In order to solve the above technical problems, the present invention provides a kind of MEMS chip encapsulating structure production method for being inverted assembly,
It is characterized in that, comprising the following steps:
Step 1: anchor point structure and sensitive structure cavity are processed on the silicon electrode layer of the SOI wafer piece A of standard,
Step 2: processing electrode structure in sensitive structure cavity；
Step 3: the silicon being bonded to the silicon electrode layer of another SOI wafer piece B using bonding technology on SOI wafer piece A
On electrode layer；
Step 4: removing the silicon substrate and silica separation layer of the SOI wafer piece B of standard；
Step 5: processing sensitive structure on the silicon electrode layer of SOI wafer piece B；
Step 6: a silicon cap with cavity is bonded to by its silicon cap bond area the electrode layer on SOI wafer piece B
On, sensitive structure is sealed in the cavity of MEMS chip；
Step 7: from the back side SOI wafer piece A be sequentially etched removal welding disking area position SOI wafer piece A silicon substrate and
Silica separation layer exposes the electrode layer of the SOI wafer piece A of welding disking area；
Step 8: processing metal pad by the way of sputtering or evaporation in welding disking area, form MEMS bare chip；
Step 9: silicon cap being fixed in ceramic cartridge, then bond wire lead realizes metal pad and ceramic cartridge pin
Between electric signal connection, finally use kovar alloy cover plate for sealing ceramic cartridge.
Stress relief grooves are also etched on the silicon substrate of SOI wafer piece A, stress relief grooves are located at the electricity of SOI wafer piece A
Between pole structure and cavity wall structure on the silicon substrate of the SOI wafer piece A at the void area back side.
Stress relief grooves are etched on SOI wafer piece A silicon substrate using deep etching technique.
Anchor point structure, sensitive structure cavity and/or electrode structure are process using dry or wet etch technique.
In step 4, using the silicon substrate and silica separation layer of CMP and etching technics removal SOI wafer piece B.
In step 5, sensitive structure is processed on the silicon electrode layer of SOI wafer piece B using deep etching technique.
The step of preparing silicon cap are as follows:
One monocrystalline silicon wafer crystal piece C is subjected to oxidation and forms silicon dioxide layer, etching removal part of silica layer only retains
The silicon dioxide layer of silicon cap bond area, then wet-etching technology is used, process silicon cap cavity.
Multi-disc MEMS bare chip is completed according to the method simultaneous processing of step 1 to step 10, then carries out scribing and is divided into respectively
Then independent MEMS bare chip is packaged using the method for step 10 again.
Advantageous effects of the invention:
This patent proposes the method for processing stress relief grooves on bare chip substrate while MEMS bare chip being inversely installed, can
Substantially to reduce influence of the encapsulation stress to MEMS capacitance sensor.This method only changes position and its phase of MEMS chip pad
Manufacturing step and technique are closed, any structure design and processes step without changing MEMS chip inner sensor sensitive structure, therefore
Number of steps and complexity without dramatically increasing MEMS chip.The packaged type and conventional package mode class of upside-down mounting
Seemingly, it is not required to special material and processing step, does not increase chip thickness, therefore has that packaging technology is simple, does not dramatically increase encapsulation
The advantage of cost, and be easily achieved.
Detailed description of the invention
Fig. 1 is the encapsulation schematic diagram of common MEMS capacitive sensor.
Fig. 2 (a)-Fig. 2 (j) is MEMS capacitive sensor processing technology step schematic diagram of the invention.
Fig. 3 is the encapsulation schematic diagram of MEMS capacitive sensor of the invention.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.Following embodiment is only used for clearly illustrating the present invention
Technical solution, and not intended to limit the protection scope of the present invention.
The MEMS capacitance sensor that tradition becomes space type is as shown in Figure 1.The lower electrode of MEMS capacitance sensor is directly fixed
On silica separation layer, silica separation layer is fixed on a silicon substrate.Top electrode (the i.e. MEMS of MEMS capacitance sensor
Sensitive structure mass block) pass through central anchor point structure support suspension on the bottom electrode.Top electrode is opposite with lower electrode to constitute capacitor,
When there is extraneous sensitive amount input, the capacitor's capacity that top electrode is constituted with lower electrode changes, by detecting the capacitance
The detection of sensitive amount to be measured can be realized in variable quantity.
After MEMS chip substrate is fixed in ceramic cartridge by viscose glue or metal bonding mode, different materials thermal expansion
Coefficient is different, and temperature change will generate thermal stress.Since lower electrode is directly anchored on silica separation layer, lower electrode
Deformation is larger.And top electrode passes through a central anchor point structure support suspension on lower electrode, and anchor point area is small, therefore on
Electrode is heated stress influence very little.Therefore when temperature change, top electrode is inconsistent with the deformation of temperature with lower electrode, leads to top electrode
The capacitor constituted with lower electrode is preferably affected by temperature, and the temperature characterisitic of sensor is poor.
The present invention by the silicon cap viscose glue of bare chip or is bonded in ceramic cartridge cavity by being inversely installed MEMS bare chip
Bottom surface, so that bare chip substrate is far from the fixation contact surface between chip and ceramics, to reduce encapsulation stress to lower electricity
The influence of pole deformation, as shown in Figure 3.
MEMS bare chip includes being processed on SOI wafer piece A silicon electrode layer positioned at the intracorporal electrode knot of sensitive structure chamber
Structure 1, the sensitive structure 2 processed on the silicon electrode layer of SOI wafer piece B and one have the silicon cap 3 of cavity；The silicon of SOI wafer piece B
Electrode layer is bonded on the silicon electrode layer on SOI wafer piece A；Silicon cap 3 is bonded to SOI wafer piece B by its silicon cap bond area
On, it will be in sensitive structure 2 is sealed to the cavity 31 of silicon cap and sensitive structure cavity 21 is formed space.
Further in stress relief grooves 41 are processed on MEMS chip substrate 4, positioned at the electrode knot of SOI wafer piece A
Stress relief grooves between structure and cavity wall structure on the silicon substrate of the SOI wafer piece A at 19 back side of void area are further
Release is transmitted to the stress of substrate by MEMS bare chip side wall.
After realizing that MEMS bare chip is inversely installed, the connection of the electric signal between MEMS bare chip and ceramic cartridge,
Need to adjust the pad locations of MEMS bare chip.By the metal pad 5 of MEMS bare chip by traditional MEMS sensitive structure layer court
The top surface of silicon cap is adjusted to MEMS sensitive structure layer towards the bottom surface of substrate.The change of pad locations need to adjust knot relevant to pad
Structure and technique.Metal pad 5 between bond wire lead 6 and 7 pin of ceramic cartridge by after being electrically connected, using kovar alloy lid
Plate 8 seals ceramic cartridge 7, and MEMS bare chip is sealed in 71 in ceramic cartridge.
Production method the following steps are included:
Step 1:MEMS capacitance sensor uses standard SOI wafer piece, and standard SOI wafer piece includes silicon substrate 4, titanium dioxide
Silicon separation layer 9 and silicon electrode layer 10.Anchor point structure 11 and quick is processed using dry or wet etch technique to wafer A first
Feel structural cavity body 21, as shown in Figure 2 (a).
Step 2: electrode structure 1 being processed using dry or wet etch technique, as shown in Fig. 2 (b).
Step 3: the silicon electrode layer of another SOI wafer piece B being bonded on wafer A using bonding technology, SOI wafer
The anchor point structure of piece A electrode layer connects and supports the electrode layer structure of SOI wafer piece B as shown in Figure 2 (c).
Step 4: using the silicon substrate and silica separation layer of CMP and etching technics removal wafer B, such as Fig. 2 (d) institute
Show.
Step 5: using deep etching technique, sensitive structure is processed, as shown in Fig. 2 (e).
Step 6: preparing silicon cap.Monocrystalline silicon wafer crystal piece C is subjected to high-temperature oxydation first, then etching removal part titanium dioxide
Silicon only retains the silicon dioxide layer of silicon cap bond area, then uses wet-etching technology, silicon cap cavity is processed, such as Fig. 2 (f)
It is shown.
Step 7: using bonding technology, silicon cap is bonded on the electrode layer of wafer B, so that MEMS sensitive structure is close
It seals in the cavity of MEMS chip, as shown in Fig. 2 (g).
Step 8: stress relief grooves being etched using the specific region of deep etching technique on a silicon substrate, such as Fig. 2 (h) institute
Show.
Step 9: using dry or wet technique, be sequentially etched removal welding disking area position from the back side SOI wafer piece A
The silicon substrate and silica separation layer of SOI wafer piece A exposes the electrode layer of the SOI wafer piece A of welding disking area, such as Fig. 2
Shown in (i).
Step 10: the welding disking area at the electrode layer back side of SOI wafer piece A is processed by the way of sputtering or evaporation
Metal pad, as shown in Fig. 2 (j).
Step 11: the MEMS wafer piece completed the process being subjected to scribing, then uses viscose glue or bonding pattern by chip silicon
Cap viscose glue realizes the telecommunications between MEMS bare chip and ceramic cartridge pin to ceramic cartridge cavity bottom surface, then bond wire lead
Number connection, finally use kovar alloy cover plate for sealing ceramic cartridge.The MEMS sensor of the inversion encapsulation finally completed the process is such as
Shown in Fig. 3.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of MEMS chip encapsulating structure production method for being inverted assembly, characterized in that the following steps are included:
Step 1: anchor point structure and sensitive structure cavity are processed on the silicon electrode layer of the SOI wafer piece A of standard,
Step 2: processing electrode structure in sensitive structure cavity；
Step 3: the silicon electrode being bonded to the silicon electrode layer of another SOI wafer piece B using bonding technology on SOI wafer piece A
On layer；
Step 4: removing the silicon substrate and silica separation layer of the SOI wafer piece B of standard；
Step 5: processing sensitive structure on the silicon electrode layer of SOI wafer piece B；
Step 6: a silicon cap with cavity is bonded on the electrode layer on SOI wafer piece B by its silicon cap bond area, it will
Sensitive structure is sealed in the cavity of MEMS chip；
Step 7: the silicon substrate and dioxy of the SOI wafer piece A of removal welding disking area position are sequentially etched from the back side SOI wafer piece A
SiClx separation layer exposes the electrode layer of the SOI wafer piece A of welding disking area；
Step 8: processing metal pad by the way of sputtering or evaporation in welding disking area, form MEMS bare chip；
Step 9: silicon cap being fixed in ceramic cartridge, then bond wire lead is realized between metal pad and ceramic cartridge pin
Electric signal connection, finally use kovar alloy cover plate for sealing ceramic cartridge；
Stress relief grooves are also etched on the silicon substrate of SOI wafer piece A.
2. the MEMS chip encapsulating structure production method according to claim 1 for being inverted assembly, characterized in that stress release
The silicon substrate of slot position SOI wafer piece A at the void area back side between the electrode structure and cavity wall structure of SOI wafer piece A
On.
3. the MEMS chip encapsulating structure production method according to claim 1 for being inverted assembly, characterized in that anchor point knot
Structure, sensitive structure cavity and/or electrode structure are process using dry or wet etch technique.
4. the MEMS chip encapsulating structure production method according to claim 1 for being inverted assembly, characterized in that in step 4,
Using the silicon substrate and silica separation layer of CMP and etching technics removal SOI wafer piece B.
5. the MEMS chip encapsulating structure production method according to claim 1 for being inverted assembly, characterized in that in step 5,
Sensitive structure is processed on the silicon electrode layer of SOI wafer piece B using deep etching technique.
6. the MEMS chip encapsulating structure production method according to claim 1 for being inverted assembly, characterized in that prepare silicon cap
The step of are as follows:
One monocrystalline silicon wafer crystal piece C is subjected to oxidation and forms silicon dioxide layer, etching removal part of silica layer only retains silicon cap
The silicon dioxide layer of bond area, then wet-etching technology is used, process silicon cap cavity.
7. the MEMS chip encapsulating structure production method according to claim 1 for being inverted assembly, characterized in that according to step
1 completes multi-disc MEMS bare chip to the method simultaneous processing of step 9, then carries out scribing and is divided into each independent MEMS bare chip,
Then it is packaged again using the method for step 9.
8. the MEMS chip encapsulating structure production method according to claim 1 for being inverted assembly, characterized in that in step 8,
It needs successively to remove the silicon substrate and silica separation layer on welding disking area SOI wafer piece A from SOI wafer piece A back-etching,
Expose the SOI wafer piece A electrode layer of welding disking area.
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| CN109437090A (en) * | 2018-06-04 | 2019-03-08 | 徐景辉 | A kind of MEMS sensor packaging method of novel no wire bonding |
| CN109387225B (en) * | 2018-10-15 | 2021-03-26 | 北京航天控制仪器研究所 | MEMS inertial device and stress-free electric fitting method thereof |
| CN110817789B (en) * | 2019-11-13 | 2023-07-25 | 青岛歌尔智能传感器有限公司 | Combined sensor and manufacturing method thereof |
| CN113819899B (en) * | 2021-11-22 | 2022-03-11 | 北京晨晶电子有限公司 | Heterogeneous integrated surface-mounted gyroscope |
| CN116659599B (en) * | 2023-07-24 | 2023-10-20 | 无锡芯感智半导体有限公司 | MEMS gas flow chip preparation method based on SOI substrate |
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| US7581443B2 (en) * | 2005-07-20 | 2009-09-01 | The Boeing Company | Disc resonator gyroscopes |
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| CN104692319A (en) * | 2015-03-16 | 2015-06-10 | 安徽北方芯动联科微系统技术有限公司 | Manufacturing method of MEMS chip insensitive to packaging stress and MEMS chip |
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