CN201598171U - Stress isolated MEMS inertial sensor packaging structure - Google Patents
Stress isolated MEMS inertial sensor packaging structure Download PDFInfo
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- CN201598171U CN201598171U CN2010201243046U CN201020124304U CN201598171U CN 201598171 U CN201598171 U CN 201598171U CN 2010201243046 U CN2010201243046 U CN 2010201243046U CN 201020124304 U CN201020124304 U CN 201020124304U CN 201598171 U CN201598171 U CN 201598171U
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Abstract
The utility model discloses a stress isolated MEMS inertial sensor packaging structure, which comprises a packaging tube shell, a cover plate, an MEMS inertial sensor and binding agent, wherein the MEMS inertial sensor is arranged on a stress isolating layer through the binding agent and the stress isolating layer is arranged on the packaging tube shell through the binding agent. The material of the stress isolating layer is as same as the substrate material of the MEMS inertial sensor, which can greatly reduce the influence on the MEMS inertial sensor of the thermal stress caused by the change of the packaging stress and the working condition temperature. The stress isolating layer can decrease the influence of external mechanical stress on the MEMS inertial sensor. The material of the packaging tube shell is unlimited and can be aluminum oxide or metal. The stress isolating layer is processed through a micro-electronic technique, the batch production can be realized, the structure is simple, the processing steps are less and the cost is low.
Description
Technical field
The utility model belongs to the microelectronics system technology, particularly a kind of MEMS inertial sensor encapsulating structure with stress isolation.
Background technology
MEMS (Micro-electro-mechanical Systems, be called for short MEMS) inertial sensor, little as MEMS gyroscope, mems accelerometer volume, cost is low, be easy to characteristics such as batch process, all is being with a wide range of applications aspect the army and the people two.In actual application, the MEMS inertial sensor need carry out air-tight packaging, with interference and the destruction of avoiding external environment condition, and MEMS inertial sensor even need Vacuum Package sometimes, to improve MEMS inertial sensor performance, as MEMS gyroscope and MEMS resonance type accelerometer.The common method of MEMS inertial sensor encapsulation is that sensor directly is connected with the encapsulation shell, when then the thermal coefficient of expansion of the thermal coefficient of expansion of encapsulating material and MEMS inertial sensor chip does not match, in encapsulation process or operating ambient temperature when changing, can produce bigger thermal stress.Thermal stress can influence the stability of MEMS inertial sensor frequency, thereby has reduced the performance of sensor.Therefore, for the MEMS inertial sensor, the air-tightness that encapsulation not only will guarantee to encapsulate, vacuum etc. also must reduce encapsulation stress.
2009, Shi Qin etc. (Shi Qin, Ding Rongzheng, Su Yan etc. silicon micro-gyroscope device level Vacuum Package. the mechanical engineering journal, 2009.2) a kind of device level vacuum sealing technique that is used for silicon micro-gyroscope has been proposed, this technology is fixed on GYROCHIP on the ceramic cartridge substrate by bonding agent.In encapsulation process, to carry out a series of thermal cycles such as high-temperature baking, sealing cap, because the thermal coefficient of expansion of silicon materials is 2.5ppm/ ℃, the thermal coefficient of expansion of glass substrate is 3.3ppm/ ℃, and the thermal coefficient of expansion of the ceramic cartridge of oxidation aluminum is 6.7ppm/ ℃, the difference of thermal expansion coefficients of encapsulating material and GYROCHIP is bigger, in encapsulation process, can produce bigger thermal stress, thereby influence the performance of gyro.The thermal coefficient of expansion of aluminium nitride is 4.0ppm/ ℃, and is comparatively approaching with the thermal coefficient of expansion of GYROCHIP, but the ceramic cartridge cost that adopts aluminium nitride to make will increase greatly, is about 8 times of alumina package.
Summary of the invention
The purpose of this utility model be to provide a kind of have stress isolation, simple in structure, can produce in batches, the low MEMS inertial sensor encapsulating structure of cost.
The technical solution that realizes the utility model purpose is: a kind of MEMS inertial sensor encapsulating structure with stress isolation, comprise encapsulation shell, cover plate, MEMS inertial sensor and bonding agent, the MEMS inertial sensor is installed on the stress isolation layer by bonding agent, and this stress isolation layer is installed on the encapsulation shell by bonding agent.
The utility model compared with prior art, its remarkable advantage: the material of (1) stress isolation layer is identical with the backing material of MEMS inertial sensor, can reduce encapsulation stress and operating ambient temperature greatly and change the influence of the thermal stress of generation to the MEMS inertial sensor; (2) the stress isolation layer can reduce the influence of extraneous mechanical stress to the MEMS inertial sensor; (3) the package tube shell material is unrestricted, can be aluminium oxide or metal; (4) the stress isolation layer adopts microelectronic technique processing, can realize producing in batches, and simple in structure, the processing technology step is few, and cost is low.
Below in conjunction with accompanying drawing the utility model is described in further detail.
Description of drawings
Fig. 1 is the utility model MEMS inertial sensor encapsulating structure profile.
Fig. 2 is the utility model stress isolation layer structural representation.
The specific embodiment
In conjunction with Fig. 1, the utlity model has the MEMS inertial sensor encapsulating structure of stress isolation, comprise encapsulation shell 1, cover plate 2, MEMS inertial sensor 3 and bonding agent 4, MEMS inertial sensor 3 is installed on the stress isolation layer 5 by bonding agent 4, and this stress isolation layer 5 is installed on the encapsulation shell 1 by bonding agent 4.Encapsulation shell 1 can adopt pottery or metal, and external form is rectangle or circle.Cover plate 2 is connected with shell 1 by the scolder ring.The material that stress isolation layer 5 adopts is identical with the backing material of MEMS inertial sensor 3, as inertial sensor adopt silicon glass bonding technology add man-hour then the isolation structure material be glass, inertial sensor adopt Si-Si bonding process add man-hour then the isolation structure material be silicon, greatly reduce thermal stress like this, can reduce of the influence of extraneous mechanical stress simultaneously the MEMS inertial sensor.Stress isolation layer 5 adopts microelectronic technique processing, can realize producing in batches, and joint pin 6a, 6b, 6c, 6d and dull and stereotyped 7 are processed as one.Stress isolation layer 5 and shell 1 be connected and MEMS inertial sensor 3 all adopts traditional IC packaging technology with being connected of isolation structure, technology maturation, cost is low.
In conjunction with Fig. 2 (a), Fig. 2 (b), stress isolation layer 5 is made up of joint pin 6a, 6b, 6c, 6d and dull and stereotyped 7, joint pin 6a, 6b, 6c, 6d bottom are connected with shell 1 by bottom bonding agent 4b, and MEMS inertial sensor 3 is installed on dull and stereotyped 7 by top bonding agent 4a.The number of joint pin is decided according to need, can be two, three, four etc.Bonding agent 4 is made up of top bonding agent 4a and bottom bonding agent 4b.
Claims (4)
1. MEMS inertial sensor encapsulating structure with stress isolation, comprise encapsulation shell (1), cover plate (2), MEMS inertial sensor (3) and bonding agent (4), it is characterized in that MEMS inertial sensor (3) is installed on the stress isolation layer (5) by bonding agent (4), this stress isolation layer (5) is installed on the encapsulation shell (1) by bonding agent (4).
2. the MEMS inertial sensor encapsulating structure with stress isolation according to claim 1, it is characterized in that stress isolation layer (5) is made up of joint pin (6a, 6b, 6c, 6d) and dull and stereotyped (7), joint pin (6a, 6b, 6c, 6d) bottom is connected with shell (1) by bottom bonding agent (4b), and MEMS inertial sensor (3) is installed on the flat board (7) by top bonding agent (4a).
3. the MEMS inertial sensor encapsulating structure with stress isolation according to claim 1 is characterized in that encapsulating shell (1) and adopts pottery or metal.
4. the MEMS inertial sensor encapsulating structure with stress isolation according to claim 1, it is identical with MEMS inertial sensor (3) backing material to it is characterized in that stress isolation layer (5) adopts, and adopts microelectronic technique processing.
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| CN2010201243046U CN201598171U (en) | 2010-03-05 | 2010-03-05 | Stress isolated MEMS inertial sensor packaging structure |
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| CN2010201243046U CN201598171U (en) | 2010-03-05 | 2010-03-05 | Stress isolated MEMS inertial sensor packaging structure |
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Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102259827A (en) * | 2011-06-25 | 2011-11-30 | 中北大学 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
| CN102431950A (en) * | 2011-12-31 | 2012-05-02 | 天水华天科技股份有限公司 | Double-layer MEMS (micro-electro-mechanical systems) device stacked package and production method thereof |
| CN103193198A (en) * | 2013-04-22 | 2013-07-10 | 安徽北方芯动联科微系统技术有限公司 | Method for reducing packaging stress of micro-electromechanical system (MEMS) chip through back graphics |
| CN103499353A (en) * | 2013-09-04 | 2014-01-08 | 南京理工大学 | Vibration reduction testing device for chip type micro-gyroscope |
| CN104684840A (en) * | 2012-07-31 | 2015-06-03 | 惠普发展公司，有限责任合伙企业 | Device including interposer between semiconductor and substrate |
| CN105129720A (en) * | 2015-07-25 | 2015-12-09 | 中国科学院地质与地球物理研究所 | MEMS sensor packaging structure and method |
| CN107055461A (en) * | 2016-10-21 | 2017-08-18 | 西北工业大学 | A kind of SOI bases micro-inertia sensor encapsulation stress partition method |
| CN107416760A (en) * | 2017-08-16 | 2017-12-01 | 北方电子研究院安徽有限公司 | Be inverted assembling can stress release MEMS chip encapsulating structure preparation method |
| CN107445137A (en) * | 2017-08-16 | 2017-12-08 | 北方电子研究院安徽有限公司 | A kind of MEMS chip encapsulating structure preparation method for being inverted assembling |
| CN107484092A (en) * | 2016-06-07 | 2017-12-15 | 罗伯特·博世有限公司 | Sensor and/or converter apparatus and the method for running it |
| CN107478224A (en) * | 2017-08-17 | 2017-12-15 | 深圳市道通智能航空技术有限公司 | Inertial measuring unit and plant equipment |
| CN107673304A (en) * | 2017-08-12 | 2018-02-09 | 北方电子研究院安徽有限公司 | A kind of acceleration sensor structure for reducing embedding stress and preparation method thereof |
| CN109824007A (en) * | 2019-01-31 | 2019-05-31 | 清华大学 | A kind of on piece stress isolation structure and its design method for micro electro mechanical device |
| CN110823248A (en) * | 2019-10-16 | 2020-02-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low stress set packaging method of MEMS gyroscope |
| CN111115551A (en) * | 2019-12-06 | 2020-05-08 | 上海航天控制技术研究所 | MEMS inertial device for reducing packaging stress through transition layer structure |
| CN111463175A (en) * | 2020-04-26 | 2020-07-28 | 潍坊歌尔微电子有限公司 | Chip structure and sensor |
| CN112938888A (en) * | 2021-02-01 | 2021-06-11 | 南京理工大学 | MEMS sensor chip packaging structure with stress adjustment and method |
| US11041726B2 (en) | 2017-08-17 | 2021-06-22 | Autel Robotics Co., Ltd. | Inertial measurement apparatus and mechanical device |
| CN113371668A (en) * | 2021-04-29 | 2021-09-10 | 北京航天控制仪器研究所 | MEMS accelerometer low-stress integrated packaging structure and method |
| CN114380268A (en) * | 2021-11-29 | 2022-04-22 | 上海航天控制技术研究所 | Packaging tube shell with vibration reduction structure and MEMS inertial device |
| CN115235515A (en) * | 2022-09-20 | 2022-10-25 | 南京新力感电子科技有限公司 | Sensor and preparation method thereof |
| WO2024008976A1 (en) * | 2022-07-08 | 2024-01-11 | Autorient Technologies AS | Micromechanical devices having stress decoupling structure and methods of manufacturing thereof |
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2010
- 2010-03-05 CN CN2010201243046U patent/CN201598171U/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102259827A (en) * | 2011-06-25 | 2011-11-30 | 中北大学 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
| CN102259827B (en) * | 2011-06-25 | 2014-06-25 | 中北大学 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
| CN102431950B (en) * | 2011-12-31 | 2015-10-07 | 天水华天科技股份有限公司 | A kind of double-deck MEMS stack package and production method thereof |
| CN102431950A (en) * | 2011-12-31 | 2012-05-02 | 天水华天科技股份有限公司 | Double-layer MEMS (micro-electro-mechanical systems) device stacked package and production method thereof |
| CN104684840A (en) * | 2012-07-31 | 2015-06-03 | 惠普发展公司，有限责任合伙企业 | Device including interposer between semiconductor and substrate |
| CN103193198A (en) * | 2013-04-22 | 2013-07-10 | 安徽北方芯动联科微系统技术有限公司 | Method for reducing packaging stress of micro-electromechanical system (MEMS) chip through back graphics |
| CN103499353B (en) * | 2013-09-04 | 2016-03-02 | 南京理工大学 | The vibration reduction testing device of chip type microthrust test |
| CN103499353A (en) * | 2013-09-04 | 2014-01-08 | 南京理工大学 | Vibration reduction testing device for chip type micro-gyroscope |
| CN105129720A (en) * | 2015-07-25 | 2015-12-09 | 中国科学院地质与地球物理研究所 | MEMS sensor packaging structure and method |
| CN107484092A (en) * | 2016-06-07 | 2017-12-15 | 罗伯特·博世有限公司 | Sensor and/or converter apparatus and the method for running it |
| CN107055461A (en) * | 2016-10-21 | 2017-08-18 | 西北工业大学 | A kind of SOI bases micro-inertia sensor encapsulation stress partition method |
| CN107055461B (en) * | 2016-10-21 | 2018-12-18 | 西北工业大学 | A kind of SOI base micro-inertia sensor encapsulation stress partition method |
| CN107673304A (en) * | 2017-08-12 | 2018-02-09 | 北方电子研究院安徽有限公司 | A kind of acceleration sensor structure for reducing embedding stress and preparation method thereof |
| CN107445137B (en) * | 2017-08-16 | 2019-06-04 | 北方电子研究院安徽有限公司 | A kind of MEMS chip encapsulating structure production method for being inverted assembly |
| CN107416760A (en) * | 2017-08-16 | 2017-12-01 | 北方电子研究院安徽有限公司 | Be inverted assembling can stress release MEMS chip encapsulating structure preparation method |
| CN107445137A (en) * | 2017-08-16 | 2017-12-08 | 北方电子研究院安徽有限公司 | A kind of MEMS chip encapsulating structure preparation method for being inverted assembling |
| CN107416760B (en) * | 2017-08-16 | 2019-06-04 | 北方电子研究院安徽有限公司 | Be inverted assembly can stress release MEMS chip encapsulating structure production method |
| WO2019033753A1 (en) * | 2017-08-17 | 2019-02-21 | 深圳市道通智能航空技术有限公司 | Inertial measuring device and mechanical equipment |
| US11041726B2 (en) | 2017-08-17 | 2021-06-22 | Autel Robotics Co., Ltd. | Inertial measurement apparatus and mechanical device |
| CN107478224A (en) * | 2017-08-17 | 2017-12-15 | 深圳市道通智能航空技术有限公司 | Inertial measuring unit and plant equipment |
| CN109824007A (en) * | 2019-01-31 | 2019-05-31 | 清华大学 | A kind of on piece stress isolation structure and its design method for micro electro mechanical device |
| CN110823248A (en) * | 2019-10-16 | 2020-02-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low stress set packaging method of MEMS gyroscope |
| CN111115551A (en) * | 2019-12-06 | 2020-05-08 | 上海航天控制技术研究所 | MEMS inertial device for reducing packaging stress through transition layer structure |
| CN111115551B (en) * | 2019-12-06 | 2023-08-04 | 上海航天控制技术研究所 | MEMS inertial device with reduced packaging stress by transition layer structure |
| CN111463175A (en) * | 2020-04-26 | 2020-07-28 | 潍坊歌尔微电子有限公司 | Chip structure and sensor |
| CN111463175B (en) * | 2020-04-26 | 2022-03-22 | 潍坊歌尔微电子有限公司 | Chip structure and sensor |
| CN112938888A (en) * | 2021-02-01 | 2021-06-11 | 南京理工大学 | MEMS sensor chip packaging structure with stress adjustment and method |
| CN113371668A (en) * | 2021-04-29 | 2021-09-10 | 北京航天控制仪器研究所 | MEMS accelerometer low-stress integrated packaging structure and method |
| CN113371668B (en) * | 2021-04-29 | 2024-05-14 | 北京航天控制仪器研究所 | MEMS accelerometer low-stress integrated packaging structure and method |
| CN114380268A (en) * | 2021-11-29 | 2022-04-22 | 上海航天控制技术研究所 | Packaging tube shell with vibration reduction structure and MEMS inertial device |
| WO2024008976A1 (en) * | 2022-07-08 | 2024-01-11 | Autorient Technologies AS | Micromechanical devices having stress decoupling structure and methods of manufacturing thereof |
| CN115235515A (en) * | 2022-09-20 | 2022-10-25 | 南京新力感电子科技有限公司 | Sensor and preparation method thereof |
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Owner name: XIAMEN NIELL ELECTRONICS CO., LTD. Free format text: FORMER OWNER: NANJIANG UNIV. OF SCIENCE + ENGINEERING Effective date: 20130723 |
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Free format text: CORRECT: ADDRESS; FROM: 210094 NANJING, JIANGSU PROVINCE TO: 362000 XIAMEN, FUJIAN PROVINCE |
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Effective date of registration: 20130723 Address after: 362000 No. 8 sunshine South Road, Xinyang Industrial Area, Haicang District, Fujian, Xiamen Patentee after: Xiamen Niell Electronic Co., Ltd. Address before: 210094 Xiaolingwei, Jiangsu, No. 200, Patentee before: Nanjing University of Science and Technology |
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Granted publication date: 20101006 |