CN104062464A - MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method - Google Patents

MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method Download PDF

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Publication number
CN104062464A
CN104062464A CN201410264513.3A CN201410264513A CN104062464A CN 104062464 A CN104062464 A CN 104062464A CN 201410264513 A CN201410264513 A CN 201410264513A CN 104062464 A CN104062464 A CN 104062464A
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pressure
sensor
type acceleration
piezoresistance type
silica
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CN104062464B (en
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董健
蒋恒
孙笠
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Jiangsu Intellisense Technology Co., Ltd.
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Zhejiang University of Technology ZJUT
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Abstract

The invention discloses an MEMS piezoresistive accelerated speed and pressure integration sensor based on anodic bonding packaging and a manufacturing method thereof. The sensor integrates a piezoresistive acceleration sensor and a piezoresistive pressure sensor simultaneously and has a sandwich structure composed of first bonding glass, a silicon substrate and second bonding glass. The MEMS piezoresistive accelerated speed and pressure integration sensor is novel in structure, low in weight, small in size, good in stability and high in anti-pollution capacity. Besides, according to the MEMS piezoresistive accelerated speed and pressure integration sensor, the same process and different design modes are used for the same chip, and accordingly pressure measurement and acceleration speed measurement are achieved, and the process procedures are simple. The sensor has certain application prospects in the fields of aerospace, military, automobiles, environment monitoring and the like.

Description

A kind of MEMS piezoresistance type acceleration, pressure integrated sensor and manufacture method
(1) technical field
The present invention relates to piezoresistance type acceleration, pressure integrated sensor and manufacture method thereof in MEMS (MEMS (micro electro mechanical system)) sensor field, be specifically related to a kind of MEMS piezoresistance type acceleration, pressure integrated sensor and manufacture method thereof based on anode linkage encapsulation.
(2) background technology
Along with the progress of micro-processing technology and the application demand of small intelligent sensor-based system, integrated on monolithic of multiple sensors becomes a kind of development trend.In the fields such as Aero-Space, military affairs, automobile, environmental monitoring, often want the parameters such as while acceleration measurement, pressure, temperature.But in these application, due to the strict restriction of environmental suitability, volume, cost and function etc., require sensor to there is microminiaturization, integrated, multi-functional feature.Integrated sensor can be on same chip integrated multiple different sensors, in order to different physical quantitys is detected simultaneously, and volume is little, unit cost is low, has potential application foreground widely in above-mentioned field, therefore receive increasing concern both at home and abroad.But compare with integrated circuit, the integrated of sensor seems more difficult, and reason is that principle of work and the organization plan difference of different sensors is very large, and from principle of work, some sensors are the responsive principles of resistance, and some sensors are capacitance-sensitive principles; From organization plan, some needs the special constructions such as film, and some needs special sensitive material.Therefore the sensor of these different principle and structure is carried out to integrated manufacture, need to study a set of specific process.
(3) summary of the invention
The object of this invention is to provide a kind of MEMS piezoresistance type acceleration, pressure integrated sensor and manufacture method thereof based on anode linkage encapsulation technology, surperficial micro-processing, body micro fabrication, realize the directly integrated manufacture on a disk by two kinds of sensors.
For achieving the above object, the technical solution used in the present invention is:
A kind of MEMS piezoresistance type acceleration, pressure integrated sensor, described sensor is simultaneously integrated piezoresistance type acceleration sensor and piezoresistive pressure sensor, and there is first key combined glass glass-silica-based the-second bonding glass sandwich structure; Described silica-based inside is formed with piezoresistance type acceleration sensor semi-girder and piezoresistive pressure sensor diaphragm, silica-based front is formed with two pressure drag regions, is respectively the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor; The pressure drag region of described piezoresistance type acceleration sensor is positioned at the upper surface root of piezoresistance type acceleration sensor semi-girder, and is injected with 4 light boron diffusion pressure drags of light boron formation, and the inside of simultaneously light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The pressure drag region of described piezoresistive pressure sensor is positioned at the upper surface of piezoresistive pressure sensor diaphragm, be also injected with light boron and form 4 light boron diffusion pressure drags, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The top in two described pressure drag regions deposits silicon dioxide layer, silicon dioxide layer top deposits silicon nitride layer, described silicon dioxide layer together with silicon nitride layer as insulating passivation layer, described insulating passivation layer has fairlead, utilize plain conductor to be communicated with two pressure drag regions, and 4 light boron diffusion pressure drags in piezoresistance type acceleration sensor pressure drag region form Hui Sidun full-bridge by plain conductor and connect, 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region also form Hui Sidun full-bridge by plain conductor and connect; The top of described insulating passivation layer deposits amorphous silicon, described amorphous silicon and first key combined glass glass anode linkage, and, utilize amorphous silicon as step, after described amorphous silicon and first key combined glass glass bonding, form a vacuum cavity, be communicated with piezoresistance type acceleration sensor and piezoresistive pressure sensor; The described silica-based back side and the second bonding glass anode linkage, the second described bonding glass is with air hole, and described air hole is positioned at the below of piezoresistive pressure sensor diaphragm; Described silica-based front is also formed with dense boron wire, and the top of described dense boron wire is connected with metal pin, and dense boron wire is communicated with working sensor district with metal pin.
MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor, preferably described silica-based be N-shaped (100) silicon chip; Preferably the thickness of the amorphous silicon of described insulating passivation layer top deposition is 2~4 μ m.
The principle of work of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor is as follows: MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor be the pressure drag characteristic based on monocrystalline silicon after B Implanted mainly, light boron diffusion pressure drag on piezoresistance type acceleration sensor semi-girder and piezoresistive pressure sensor diaphragm is subject to after the effect of power, resistivity changes, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the surveyed physical quantity size of (comprising acceleration and pressure) by measuring electric signal output.In the present invention, we realize p-type pressure drag to N-shaped (100) crystal orientation silicon chip B Implanted, utilize PN junction to realize the isolated of pressure drag, due to the anisotropy of the piezoresistance coefficient of pressure drag, the stress of different directions has different impacts to pressure drag, in order to increase as far as possible sensitivity, the arrangement mode of the light boron diffusion pressure drag in the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag of the present invention region and piezoresistive pressure sensor pressure drag region is: longitudinally along silica-based (1, 1, 0) crystal orientation direction, laterally along silica-based (1,-1, 0) crystal orientation direction distributes, longitudinally piezoresistance coefficient, laterally piezoresistance coefficient is respectively 71.8,-66.3.
In order to improve sensitivity, preferred piezoresistance type acceleration sensor of the present invention designs for single cantilever beam, the light boron diffusion pressure drag in described piezoresistance type acceleration sensor pressure drag region is 4,2 are symmetrically distributed in the region of stress concentration of semi-girder upper surface root to the light boron diffusion of brachium pontis pressure drag, other 2 light boron diffusion pressure drags are symmetrically distributed in zero stress district.Certainly, need also to adopt different girder constructions according to different sensitivity, as monolateral twin beams, bilateral twin beams, bilateral four beams, four Bian Siliang, four limit eight beams etc.And, described light boron diffusion pressure drag also can adopt different distribution modes, 4 light boron diffusion pressure drags (can be 4, also can 8 folding types etc.) connect and compose Hui Sidun full-bridge by plain conductor, a kind of connected mode of piezoresistance type acceleration sensor metal pin of the present invention is: the 4th pin connects positive source, share with piezoresistive pressure sensor in the present invention, it is negative that the 5th pin connects piezoresistance type acceleration sensor output, the 6th pin ground connection, the 7th pin connects piezoresistance type acceleration sensor and is just exporting.
Piezoresistive pressure sensor of the present invention adopts rectangular film design, and 4 light boron diffusion pressure drag parallel arrangements, make full use of horizontal piezoresistive effect, and such piezoresistive pressure sensor has brachium pontis resistance and is evenly distributed, the good advantage of output linearity degree and consistance.Certainly,, according to different sensitivity needs, described light boron diffusion pressure drag can adopt different distribution modes.4 light boron diffusion pressure drags of piezoresistive pressure sensor of the present invention connect and compose Hui Sidun full-bridge by plain conductor, and, a kind of connected mode of piezoresistive pressure sensor metal pin is: the first pin connects piezoresistive pressure sensor and just exporting, the second pin ground connection, it is negative that three-prong connects piezoresistive pressure sensor output, the 4th pin connects positive source, with piezoresistance type acceleration sensor common source positive pole in the present invention.
The present invention also provides the manufacture method of a kind of described MEMS piezoresistance type acceleration, pressure integrated sensor, and described manufacture method is carried out as follows:
A) get silicon chip as silica-based, twin polishing, cleans, first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride, and positive dry etching silicon nitride, silicon dioxide are to silica-based end face;
B) the long layer of silicon dioxide protective seam of hot oxygen in silica-based front, front photoresist goes out the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor as mask lithography, then inject light boron in two pressure drag regions respectively, form light boron diffusion pressure drag, remove photoresist;
C) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron Ohmic contact region by lithography in light boron diffusion pressure drag region, then injects dense boron, form the dense boron wire in silica-based inside, and in the inner dense boron ohmic contact regions that forms of light boron diffusion pressure drag, remove photoresist, annealing;
D) first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride, positive silicon dioxide layer together with silicon nitride layer as insulating passivation layer;
E) front photoresist goes out a point film trap region as mask lithography, and dry process reaction ion etching (RIE) silicon nitride, silicon dioxide, to silica-based end face, expose the silica-based of point film trap region;
F) positive deposition one deck amorphous silicon, directly contacts with silica-based end face at a point film trap region amorphous silicon;
G) front photoresist goes out perform region and metal pin regional graphics as mask lithography, and RIE etching amorphous silicon, to silicon nitride layer, is removed photoresist;
H) front photoresist goes out fairlead as mask lithography, and dry method RIE etch silicon nitride, silicon dioxide, to silica-based end face, are removed photoresist, form fairlead;
I) front plated metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion does not have the metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin;
J) back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitride, silicon dioxide are to silica-based bottom surface, remove photoresist, silicon nitride, silicon dioxide layer are made the silica-based formation piezoresistance type acceleration sensor of mask wet etching, piezoresistive pressure sensor film;
K) the remaining silicon nitride in the dry method RIE etching back side, silicon dioxide are to silica-based bottom surface, and silicon-glass anodic bonding is carried out at the back side;
L) front photoresist goes out semi-girder release profiles as mask lithography, and DRIE carves the cantilever beam structure of wearing silicon nitride, silicon dioxide, silica-based formation piezoresistance type acceleration sensor, removes photoresist;
M) amorphous silicon-glass anodic bonding is carried out in front;
N) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry: scribing for the first time, remove metal pin top glass; Structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
The manufacture method step of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor k) in, the technological parameter of recommending the back side to carry out silicon-glass anodic bonding is: voltage 300~500V, electric current 15~20mA, 300~400 DEG C of temperature, pressure 2000~3000N, time 5~10min.
The manufacture method step of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor m) in, recommend the positive technological parameter that carries out amorphous silicon-glass anodic bonding to be: voltage 450~1000V, electric current 15~25mA, 300~400 DEG C of temperature, pressure 2000~3000N, time 15~25min.
Anode linkage technology of the present invention is a kind of prior art, this technology is well-known to those skilled in the art, its principle of work is: DC power anode is connect to silicon chip, negative pole connects glass sheet, because the performance of glass under certain high temperature is similar to electrolyte, and silicon chip is in the time that temperature is elevated to 300 DEG C~400 DEG C, resistivity will be down to 0.1 Ω m because of intrinsic excitation, and now the conducting particles in glass is (as Na +) under External Electrical Field, float to the glass surface of negative electrode, and leave negative charge at the glass surface of next-door neighbour's silicon chip, due to Na +drift make in circuit generation current flow, the glass surface of next-door neighbour's silicon chip can form the space charge region (or claiming depletion layer) that one deck width is as thin as a wafer about several microns.Because depletion layer is electronegative, silicon chip is positively charged, so exist larger electrostatic attraction between silicon chip and glass, make both close contacts, and at bonding face generation physical-chemical reaction, form the Si-O covalent bond of strong bonded, silicon and glass interface are linked together securely.According to described principle, anode linkage technology is not adapted at using in the N-shaped silicon of B Implanted and the bonding of glass, reason is: resistor stripe and PN junction of the silica-based formation of N-shaped of p doping, when in anodic bonding process, bonding electric current is by silicon on glass bonding face, the bonding voltage of 500~1500V is easily by near PN junction reverse breakdown bonding face, cause its electric leakage, destroyed the circuit on MEMS device, affect the performance of device.For the problem existing in above-mentioned existing anode linkage technology, the present invention for the second time bonding technology utilizes amorphous silicon as the conductting layer between silica-based, glass, bonding electric current is passed through along silicon-amorphous si-glass direction as much as possible, effectively make described PN junction avoid highfield, finally realize the anode linkage of upper strata amorphous silicon and glass, experiment showed, that this amorphous silicon-glass anodic bonding still can ensure to approach bond strength and the impermeability of si-glass.The encapsulation of the described MEMS piezoresistance type acceleration encapsulating based on anode linkage, pressure integrated sensor need to be through twice anode linkage, bonding is back side silicon-glass anodic bonding for the first time, relatively easily realize, bonding is the anode linkage of front amorphous silicon and glass for the second time, more difficult, can suitably add strong bonding voltage, increase bonding time.In the present invention, utilize amorphous silicon and glass bonding to also have a very large advantage, described bonding method has avoided glass to contact with the direct of silicon, has stopped the Na that original glass and silicon bonding surface may produce +isoionic pollution.
In MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor structure, in the amorphous si-glass bonding process of front, utilize amorphous silicon to form a vacuum cavity as step, be communicated with piezoresistance type acceleration sensor and piezoresistive pressure sensor.Described amorphous silicon is as step, and the method for designing of two shared vacuum cavities of sensor has two advantages very significantly: (1) has removed the bonding region between two sensors, reduce the volume of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor, reduced the cost of one single chip; (2) processing that do not need to slot of first key combined glass glass directly just can be carried out bonding.In MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor structure, the thickness of vacuum cavity directly depends on the thickness of amorphous silicon deposition, because amorphous silicon deposition obtains blocked up its density, adhesiveness all can be affected, and can strengthen the difficulty of lower step photoetching, so for fear of glass in bonding process and silicon nitride Direct Bonding, ensure the performance that amorphous silicon is good simultaneously, evidence, the amorphous silicon thickness in sensor of the present invention can be got 2~4 μ m.
The present invention is the MEMS piezoresistance type acceleration that utilizes anode linkage encapsulation, pressure integrated sensor, this sensor is simultaneously integrated piezoresistance type acceleration sensor and piezoresistive pressure sensor, recommend to do silica-based with N-shaped (100) silicon chip, adopt surperficial micro-processing technology and body micro-processing technology to manufacture the semi-girder with light boron diffusion pressure drag, diaphragm is as piezoresistance type acceleration sensor, piezoresistive pressure sensor structure, and utilize secondary anode bonding techniques to carry out wafer level packaging, wherein anode linkage adopts silicon-glass anodic bonding for the first time, anode linkage utilizes amorphous silicon layer to share bonding electric current as middle layer for the second time, protection sensor PN junction, realize amorphous silicon-glass anodic bonding.MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor structure novelty, lightweight, volume is little, good stability, contamination resistance are strong.In addition, in the present invention, on same chip, use identical technique, different designs realizes pressure survey and these two kinds of abilities of acceleration analysis, technological process is simple, utilizes the encapsulation of amorphous silicon-glass anodic bonding technology to solve and in traditional si-glass anodic bonding process, easily punctures silicon face PN junction and easily produce the shortcomings such as ionic soil.Sensor of the present invention has certain application prospect in fields such as Aero-Space, military affairs, automobile, environmental monitorings.
(4) brief description of the drawings
Fig. 1 is the cross-sectional view of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor;
Fig. 2 is the vertical view of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor;
Fig. 3~Figure 16 is the manufacturing process flow diagrammatic cross-section of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor:
Fig. 3 is silica-based first double-sided deposition silicon dioxide layer, silicon nitride layer, then the extremely schematic diagram of silica-based end face of positive dry etching silicon nitride, silicon dioxide;
Fig. 4 is the schematic diagram that forms the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region and the light boron diffusion pressure drag in piezoresistive pressure sensor pressure drag region;
Fig. 5 is the schematic diagram that forms dense boron wire and dense boron ohmic contact regions;
Fig. 6 is double-sided deposition silicon dioxide layer, silicon nitride layer, forms the schematic diagram of insulating passivation layer;
Fig. 7 etches point schematic diagram in film trap region;
Fig. 8 is the schematic diagram of front deposition of amorphous silicon;
Fig. 9 is etching amorphous silicon, forms the schematic diagram of working sensor region and metal pin regional graphics;
Figure 10 is the schematic diagram that forms fairlead;
Figure 11 is the schematic diagram that forms plain conductor and metal pin;
Figure 12 is the schematic diagram that forms piezoresistance type acceleration sensor, piezoresistive pressure sensor film;
Figure 13 is the schematic diagram that silicon-glass anodic bonding is carried out at the back side;
Figure 14 is the schematic diagram that forms the cantilever beam structure of piezoresistance type acceleration sensor;
Figure 15 is the schematic diagram that amorphous silicon-glass anodic bonding is carried out in front;
Figure 16 is the schematic diagram that scribing completes encapsulation;
In Fig. 1~Figure 16: the silicon dioxide layer in the insulating protective layer of 1-front, 1 '-back side the second silicon dioxide layer, silicon nitride layer in the insulating protective layer of 2-front, 2 '-back side the second silicon nitride layer, 3-plain conductor, 4-first key combined glass glass, 5-amorphous silicon, 6-metal pin, 7-is silica-based, the dense boron wire of 8-, the light boron diffusion pressure drag of 9-piezoresistive pressure sensor, the dense boron ohmic contact regions of the light boron diffusion of 10-piezoresistive pressure sensor pressure drag inside, the light boron diffusion pressure drag of 11-piezoresistance type acceleration sensor, the dense boron ohmic contact regions of the light boron diffusion of 12-piezoresistance type acceleration sensor pressure drag inside, 13-piezoresistance type acceleration sensor semi-girder, 14-vacuum cavity, 15-air hole, 16-piezoresistive pressure sensor diaphragm, 17-the second bonding glass, positive the first silicon dioxide layer of 18-(being etched afterwards), 18 '-back side the first silicon dioxide layer, positive the first silicon nitride layer of 19-(being etched afterwards), 19 '-back side the first silicon nitride layer, 20-divides film trap, and in Fig. 2,8a~8g represents the first~seven pin successively,
Figure 17 is a kind of pin connected mode of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor;
Pin definitions in Figure 17: 1.-the first pin connect piezoresistive pressure sensor output just, 2.-the second pin ground connection, 3.-three-prong connects that piezoresistive pressure sensor output is negative, the 4.-tetra-pin connects positive source, the 5.-five pin connects that piezoresistance type acceleration sensor output is negative, the 6.-six pin ground connection, the 7.-seven pin connect piezoresistance type acceleration sensor and just exporting.
(5) embodiment
Below in conjunction with accompanying drawing, the invention will be further described, but protection scope of the present invention is not limited in this.
As shown in Figure 1, described a kind of MEMS piezoresistance type acceleration, pressure integrated sensor, adopt first key combined glass glass-silica-based the-second bonding glass sandwich structure, described MEMS piezoresistance type acceleration, pressure integrated sensor mainly comprises: silica-based (7), for measuring the piezoresistance type acceleration sensor semi-girder (13) of individual axis acceleration, for the piezoresistive pressure sensor diaphragm (16) of gaging pressure, dense boron wire (8), metal pin (6), carry out the first key combined glass glass (4) of anode linkage with the second bonding glass (17) of silica-based anode linkage and with amorphous silicon (5).
Wherein, describedly inject the light boron diffusion pressure drag (11) of light boron as piezoresistance type acceleration sensor for measuring the upper surface root of piezoresistance type acceleration sensor semi-girder (13) of individual axis acceleration, and form dense boron ohmic contact regions (12) at the dense boron of the piezoresistance type acceleration sensor inner injection of light boron diffusion pressure drag, above the pressure drag region of piezoresistance type acceleration sensor, deposit silicon dioxide layer (1) and silicon nitride layer (2) as insulating passivation layer, on insulating passivation layer, have fairlead and utilize plain conductor (3) to be communicated with piezoresistance type acceleration, the pressure drag region of pressure transducer, 4 light boron diffusion pressure drags of pressure drag district inclusion of piezoresistance type acceleration sensor, 2 are symmetrically distributed in the region of stress concentration of semi-girder upper surface root to the light boron diffusion of brachium pontis pressure drag, other 2 are symmetrically distributed in zero stress district to the light boron diffusion of brachium pontis pressure drag, and form the connection of Hui Sidun full-bridge by plain conductor (3), when existing after an acceleration perpendicular to device surface, the bending of piezoresistance type acceleration sensor semi-girder, the pressure drag that is positioned at piezoresistance type acceleration sensor semi-girder upper surface root is subject to the effect of power, resistivity changes, as shown in Figure 2 the pressure drag of piezoresistance type acceleration sensor semi-girder upper surface root be positioned at Hui Sidun full-bridge to bridge, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the size of acceleration by measuring electric signal output.Utilize the design of Hui Sidun full-bridge to improve the sensitivity of piezoresistance type acceleration sensor part in the present invention and can ensure good linearity.
Piezoresistive pressure sensor diaphragm (16) can (comprise pressure for measuring hydrodynamic pressure, hydraulic pressure), the upper surface of described piezoresistive pressure sensor barrier film (16) is injected with the light boron diffusion pressure drag (9) of light boron as piezoresistive pressure sensor, the dense boron of the piezoresistive pressure sensor inner injection of light boron diffusion pressure drag forms dense boron ohmic contact regions (10), above the pressure drag region of piezoresistive pressure sensor, deposit silicon dioxide layer (1) and silicon nitride layer (2) as insulating passivation layer, on insulating passivation layer, have fairlead and utilize plain conductor (3) to be communicated with piezoresistance type acceleration, the pressure drag region of pressure transducer, the pressure drag region of piezoresistive pressure sensor comprises 4 light boron diffusion pressure drags equally, and form the connection of Hui Sidun full-bridge by plain conductor (3), when existing after the pressure perpendicular to device surface, the distortion of piezoresistive pressure sensor diaphragm, be positioned at the effect that pressure drag on pressure diaphragm is subject to power, resistivity changes, as shown in Figure 2 two pressure drag bars of piezoresistive pressure sensor diaphragm upper surface middle part and two, outside pressure drag bar lay respectively at Hui Sidun full-bridge to bridge, can obtain by Hui Sidun full-bridge the electric signal output that the power that is proportional to changes, just can know the size of institute's measuring pressure by measuring electric signal output.Utilize the design of Hui Sidun full-bridge to improve the sensitivity of piezoresistive pressure sensor part in the present invention and can ensure good linearity.
The encapsulation of chip adopts secondary anode bonding techniques.Anode linkage is that chip back is with the second bonding glass (17) of air hole (15) and silica-based silicon-glass anodic bonding for the first time; Anode linkage adopts amorphous silicon layer to make bonding electric current not pass through PN junction as middle layer for the second time; protection sensor PN junction; realize the anode linkage of front amorphous silicon (5) and first key combined glass glass (4); anode linkage does not adopt the reason of silicon on glass bonding to be for the second time: on silicon-glass anodic bonding face, exist PN junction; strong voltage when bonding easily punctures PN junction, destroys the electric property of circuit.
Out-of-flatness for fear of amorphous silicon (5) with first key combined glass glass (4) bonding face, ensure the impermeability of encapsulation, described acceleration, pressure integrated sensor do not adopt plain conductor to connect chip workspace and metal pin (6), but utilizes dense boron wire (8) as inner lead, working sensor district to be connected with metal pin.
So as Fig. 3~Figure 16, the manufacturing process of MEMS piezoresistance type acceleration of the present invention, pressure integrated sensor comprises the steps:
A) as shown in Figure 3: get silicon chip as silica-based (7), twin polishing, clean, first long thick silicon dioxide (18), (18 ') of 1 μ m of Double-side hot oxidation, adopt again low-pressure chemical vapor deposition (LPCVD) thick silicon nitride (19), (19 ') of two-sided length 0.1 μ m, positive dry etching silicon nitride (19), silicon dioxide (18), to silica-based (7) end face, form the mask layer of back side corrosion silicon simultaneously; Described silica-based be N-shaped (100) silicon chip;
B) as shown in Figure 4: (make to inject ion and depart to a certain extent incident angle at the thin silicon dioxide layer of protection of the long one deck of silica-based (7) positive hot oxygen, to avoid ion to be just positioned at silica-based interatomic space and to cause not colliding generation along the injection of a certain crystal orientation), front photoresist goes out the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor as mask lithography, then inject light boron in two pressure drag regions respectively, form the light boron diffusion pressure drag (11) of piezoresistance type acceleration sensor and the light boron diffusion pressure drag (9) of piezoresistive pressure sensor, remove photoresist,
C) as shown in Figure 5: front photoresist goes out dense boron conductor area as mask lithography, and make respectively dense boron Ohmic contact region by lithography in light boron diffusion pressure drag (11) region of piezoresistance type acceleration sensor and light boron diffusion pressure drag (9) region of piezoresistive pressure sensor, then inject dense boron, form the dense boron wire in silica-based inside (8), and the dense boron ohmic contact regions (10) of the dense boron ohmic contact regions (12) of the light boron diffusion of formation piezoresistance type acceleration sensor pressure drag inside and the light boron diffusion of piezoresistive pressure sensor pressure drag inside, remove photoresist, annealing,
D) as shown in Figure 6: thick silicon dioxide (1), (1 ') of first LPCVD double-sided deposition 0.2 μ m, again thick silicon nitride (2), (2 ') of LPCVD double-sided deposition 0.2 μ m, silicon dioxide layer (1) and silicon nitride layer (2) are together as insulating passivation layer;
E) as shown in Figure 7: front photoresist goes out a point film trap region as mask lithography, dry method RIE etch silicon nitride (2), silicon dioxide (1), to silica-based (7) end face, expose silica-based (7) in point film trap region;
F) as shown in Figure 8: the thick amorphous silicon (5) of front using plasma enhanced chemical vapor deposition method (PECVD) deposition one deck 3 μ m, directly contacts with silica-based (7) end face at a point film trap region amorphous silicon (5);
G) as shown in Figure 9: front photoresist goes out perform region and metal pin (6) regional graphics as mask lithography, RIE etching amorphous silicon (5), to silicon nitride layer (2), is removed photoresist;
H) as shown in figure 10: front photoresist goes out fairlead as mask lithography, dry method RIE etch silicon nitride (2), silicon dioxide (1), to silica-based (7) end face, are removed photoresist, form fairlead;
I) as shown in figure 11: front magnetron sputtering one deck 1 μ m aluminium, front photoresist goes out plain conductor (3) and metal pin (6) figure as mask lithography, and corrosion does not have the aluminium of photoresist overlay area, removes photoresist, Alloying Treatment, forms aluminum conductor and aluminum pipe pin;
J) as shown in figure 12: back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitride (2 '), (19 '), silicon dioxide (1 '), (18 ') are to silica-based (7) bottom surface, remove photoresist, silicon nitride (2 '), (19 '), silicon dioxide layer (1 '), (18 ') are made together mask wet etching silica-based (7) and form piezoresistance type acceleration sensor, piezoresistive pressure sensor film;
K) as shown in figure 13: the remaining silicon nitride in the dry method RIE etching back side (2 '), (19 '), silicon dioxide (1 '), (18 '), silicon-glass anodic bonding was carried out at the back side to silica-based (7) bottom surface;
L) as shown in figure 14: front photoresist goes out semi-girder release profiles as mask lithography, the cantilever beam structure (13) of wearing silicon nitride (2), silicon dioxide (1), silica-based (7) formation piezoresistance type acceleration sensor is carved in deep reaction ion etching (DRIE), removes photoresist;
M) as shown in figure 15: amorphous silicon-glass anodic bonding is carried out in front;
N) as shown in figure 16: scribing, realize the encapsulation of one single chip, scribing makes two bites at a cherry: scribing for the first time, remove metal pin (6) top glass (4); Structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
Further, the MEMS piezoresistance type acceleration of manufacturing by described technological process, pressure integrated sensor, the semi-girder of piezoresistance type acceleration sensor is identical with the thickness of piezoresistive pressure sensor diaphragm, adjust piezoresistance type acceleration in order to obtain both different thickness, the sensitivity of piezoresistive pressure sensor, in described processing step (j), silicon corrosion in the back side can make two bites at a cherry, as shown in figure 12, according to piezoresistance type acceleration, the different requirements of piezoresistive pressure sensor to sensitivity, in the present embodiment, the semi-girder thickness of piezoresistance type acceleration sensor is 12 μ m, and the thickness of piezoresistive pressure sensor diaphragm is 30 μ m, at this moment need first to corrode piezoresistive pressure sensor back of the body chamber, after eroding away depth difference, corrode together again, concrete technology flow process is: back side photoresist is opened piezoresistive pressure sensor back surface corrosion window as mask lithography, RIE etches away silicon nitride, silicon dioxide is to silica-based bottom surface, silicon nitride, silicon dioxide layer is made mask, 40%KOH solution wet etching is silica-based, corrosion depth is controlled at 18 μ m, the corrosion depth that forms two sensors back of the body chamber is poor, and then photoresist is opened piezoresistance type acceleration sensor back surface corrosion window as mask lithography, RIE etches away silicon nitride, silicon dioxide is to silica-based bottom surface, 40%KOH solution wet etching is silica-based until erode away piezoresistance type acceleration sensor semi-girder and the piezoresistive pressure sensor diaphragm wanted, twice corrosion forms the different piezoresistance type acceleration sensor semi-girder of thickness and piezoresistive pressure sensor diaphragm structure later.
Further, in order to ensure the quality of twice anode linkage, by test of many times, the present invention has provided the optimum bonding parameter of described MEMS piezoresistance type acceleration, pressure integrated sensor, as table 1, shown in 2.
Table 1 is anode linkage (si-glass) parameter for the first time
Table 2 is anode linkage (amorphous si-glass) parameter for the second time
Further, in the present invention, the semi-girder of piezoresistance type acceleration sensor is except the monolateral single-cantilever structure shown in Fig. 2, require also can adopt the structures such as monolateral double cantilever beam, bilateral twin beams, bilateral four beams, four Bian Siliang, four limit eight beams according to different sensitivity, resonance frequency, light boron diffusion pressure drag also can be distributed in other position.In the present invention, piezoresistive pressure sensor part adopts rectangular film design, 4 light boron diffusion pressure drag parallel arrangements, make full use of horizontal piezoresistive effect, such piezoresistive pressure sensor has brachium pontis resistance and is evenly distributed, the good advantage of output linearity degree and consistance, certainly,, according to different sensitivity needs, light boron diffusion pressure drag can adopt different distribution modes.
It should be noted that, the present invention not parameter such as the cantilever beam structure size to Sensor section, diaphragm thickness, pressure drag number, pressure drag size and arranged distribution limits, also the technological parameter of manufacturing process of the present invention is not limited, and this embodiment is only illustrative, the present invention is not done to any restriction.

Claims (10)

1. MEMS piezoresistance type acceleration, a pressure integrated sensor, it is characterized in that described sensor simultaneously integrated piezoresistance type acceleration sensor and piezoresistive pressure sensor, and there is first key combined glass glass-silica-based the-second bonding glass sandwich structure; Described silica-based inside is formed with piezoresistance type acceleration sensor semi-girder and piezoresistive pressure sensor diaphragm, silica-based front is formed with two pressure drag regions, is respectively the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor; The pressure drag region of described piezoresistance type acceleration sensor is positioned at the upper surface root of piezoresistance type acceleration sensor semi-girder, and is injected with 4 light boron diffusion pressure drags of light boron formation, and the inside of simultaneously light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The pressure drag region of described piezoresistive pressure sensor is positioned at the upper surface of piezoresistive pressure sensor diaphragm, be also injected with light boron and form 4 light boron diffusion pressure drags, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron ohmic contact regions; The top in two described pressure drag regions deposits silicon dioxide layer, silicon dioxide layer top deposits silicon nitride layer, described silicon dioxide layer together with silicon nitride layer as insulating passivation layer, described insulating passivation layer has fairlead, utilize plain conductor to be communicated with two pressure drag regions, and 4 light boron diffusion pressure drags in piezoresistance type acceleration sensor pressure drag region form Hui Sidun full-bridge by plain conductor and connect, 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region also form Hui Sidun full-bridge by plain conductor and connect; The top of described insulating passivation layer deposits amorphous silicon, described amorphous silicon and first key combined glass glass anode linkage, and, utilize amorphous silicon as step, after described amorphous silicon and first key combined glass glass bonding, form a vacuum cavity, be communicated with piezoresistance type acceleration sensor and piezoresistive pressure sensor; The described silica-based back side and the second bonding glass anode linkage, the second described bonding glass is with air hole, and described air hole is positioned at the below of piezoresistive pressure sensor diaphragm; Described silica-based front is also formed with dense boron wire, and the top of described dense boron wire is connected with metal pin, and dense boron wire is communicated with working sensor district with metal pin.
2. MEMS piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, the arrangement mode that it is characterized in that the light boron diffusion pressure drag in described piezoresistance type acceleration sensor pressure drag region and the light boron diffusion pressure drag in piezoresistive pressure sensor pressure drag region is: longitudinally along silica-based (1,1,0) crystal orientation direction, laterally along silica-based (1,-1,0) crystal orientation direction distributes, and longitudinally piezoresistance coefficient, horizontal piezoresistance coefficient are respectively 71.8 ,-66.3.
3. MEMS piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterized in that described piezoresistance type acceleration sensor designs for single cantilever beam, the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region is 4, wherein 2 are symmetrically distributed in the region of stress concentration of semi-girder root to the light boron diffusion of brachium pontis pressure drag, and other 2 light boron diffusion pressure drags are symmetrically distributed in zero stress district.
4. MEMS piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, is characterized in that described piezoresistive pressure sensor adopts rectangular film design, 4 light boron diffusion pressure drag parallel arrangements in piezoresistive pressure sensor pressure drag region.
5. MEMS piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, it is characterized in that described metal pin has 7, the first pin connect piezoresistive pressure sensor output just, the second pin ground connection, three-prong connects that piezoresistive pressure sensor output is negative, the 4th pin connects positive source, the 5th pin connects that piezoresistance type acceleration sensor output is negative, the 6th pin ground connection, the 7th pin connect piezoresistance type acceleration sensor and just exporting, piezoresistive pressure sensor and piezoresistance type acceleration sensor common source positive pole.
6. the MEMS piezoresistance type acceleration as described in claim 1~5, pressure integrated sensor, it is characterized in that described silica-based be N-shaped (100) silicon chip.
7. the MEMS piezoresistance type acceleration as described in claim 1~5, pressure integrated sensor, is characterized in that the thickness of the amorphous silicon of described insulating passivation layer top deposition is 2~4 μ m.
8. the manufacture method of MEMS piezoresistance type acceleration as claimed in claim 1, pressure integrated sensor, the manufacture method described in it is characterized in that is carried out as follows:
A) get silicon chip as silica-based, twin polishing, cleans, first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride, and positive dry etching silicon nitride, silicon dioxide are to silica-based end face;
B) the long layer of silicon dioxide protective seam of hot oxygen in silica-based front, front photoresist goes out the pressure drag region of piezoresistance type acceleration sensor and the pressure drag region of piezoresistive pressure sensor as mask lithography, then inject light boron in two pressure drag regions respectively, form light boron diffusion pressure drag, remove photoresist;
C) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron Ohmic contact region by lithography in light boron diffusion pressure drag region, then injects dense boron, form the dense boron wire in silica-based inside, and in the inner dense boron ohmic contact regions that forms of light boron diffusion pressure drag, remove photoresist, annealing;
D) first double-sided deposition layer of silicon dioxide, then double-sided deposition one deck silicon nitride, positive silicon dioxide layer together with silicon nitride layer as insulating passivation layer;
E) front photoresist goes out a point film trap region as mask lithography, and dry method RIE etch silicon nitride, silicon dioxide, to silica-based end face, expose the silica-based of point film trap region;
F) positive deposition one deck amorphous silicon, directly contacts with silica-based end face at a point film trap region amorphous silicon;
G) front photoresist goes out perform region and metal pin regional graphics as mask lithography, and RIE etching amorphous silicon, to silicon nitride layer, is removed photoresist;
H) front photoresist goes out fairlead as mask lithography, and dry method RIE etch silicon nitride, silicon dioxide, to silica-based end face, are removed photoresist, form fairlead;
I) front plated metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion does not have the metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin;
J) back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitride, silicon dioxide are to silica-based bottom surface, remove photoresist, silicon nitride, silicon dioxide layer are made the silica-based formation piezoresistance type acceleration sensor of mask wet etching, piezoresistive pressure sensor film;
K) the remaining silicon nitride in the dry method RIE etching back side, silicon dioxide are to silica-based bottom surface, and silicon-glass anodic bonding is carried out at the back side;
L) front photoresist goes out semi-girder release profiles as mask lithography, and DRIE carves the cantilever beam structure of wearing silicon nitride, silicon dioxide, silica-based formation piezoresistance type acceleration sensor, removes photoresist;
M) amorphous silicon-glass anodic bonding is carried out in front;
N) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry: scribing for the first time, remove metal pin top glass; Structure in point film trap is scratched in scribing for the second time, separates one single chip, completes encapsulation.
9. the manufacture method of MEMS piezoresistance type acceleration as claimed in claim 8, pressure integrated sensor, it is characterized in that the technological parameter that during step k), silicon-glass anodic bonding is carried out at the back side is: voltage 300~500V, electric current 15~20mA, 300~400 DEG C of temperature, pressure 2000~3000N, time 5~10min.
10. the manufacture method of MEMS piezoresistance type acceleration as claimed in claim 8, pressure integrated sensor, it is characterized in that the technological parameter that during step m), amorphous silicon-glass anodic bonding is carried out in front is: voltage 450~1000V, electric current 15~25mA, 300~400 DEG C of temperature, pressure 2000~3000N, time 15~25min.
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Inventor after: Long Zhijian

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