CN103712721A - SOI pressure strain gauge and manufacturing method thereof - Google Patents

SOI pressure strain gauge and manufacturing method thereof Download PDF

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Publication number
CN103712721A
CN103712721A CN201310719756.7A CN201310719756A CN103712721A CN 103712721 A CN103712721 A CN 103712721A CN 201310719756 A CN201310719756 A CN 201310719756A CN 103712721 A CN103712721 A CN 103712721A
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silicon
soi
strain gauge
force sensing
film
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CN103712721B (en
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沈绍群
罗小勇
梁栋汉
阮炳权
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Guangdong Yu Yu sensor Co., Ltd.
SHANGHAI DANYU SENSOR TECHNOLOGY CO., LTD.
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XINHUI KANGYU CONTROL SYSTEMS ENGINEERING Inc
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Abstract

The invention discloses an SOI pressure strain gauge and a manufacturing method thereof. A silicon substrate of the strain gauge is a single-silicon or poly-silicon material, a silicon dioxide insulation film is formed at a surface of the silicon substrate, a single-silicon or poly-silicon film is further formed at a surface of the insulation film as a force-sensitive resistor manufacturing material, two or four force-sensitive resistors having complete insulative electric performance are formed through semiconductor plane technology, the force-sensitive resistors are connected through inner metal leading wires to form a half-bridge or full bridge Wheatstone circuit, the inner metal leading wires walk along a surface of a single-silicon or poly-silicon layer doped with thick boron, resistivity of the silicon dioxide insulation film reaches 1015 omega-cm, and no electric leakage among the force-sensitive resistors is guaranteed. The SOI pressure strain gauge can be applied to the military industry with work temperature higher than 300 DEG C. The high-concentration single-silicon or poly-silicon material is employed to manufacture the force-sensitive resistors, sensitivity and zero point temperature coefficient reach 10-6VB/DEG C. The SOI pressure strain gauge has excellent characteristics of high temperature low drift.

Description

A kind of SOI piezoelectric strain gauge and preparation method thereof
Technical field
The present invention relates to micro-electronics pressure sensor field, particularly a kind of SOI piezoelectric strain gauge and preparation method thereof.
Background technology
In, in low-quantum pressure sensor field, adopt two kinds of version detection system pressure of back side pressurized or oil-filled body stainless steel ripple barrier film front pressurized to change.But these two kinds of versions are non-refractory all, can only work being less than under 125 ℃ of environment, and overload capacity is poor, can only transship under 3-5 times of pressure and work.In being greater than the high pressure sensor field of 6-200Mpa, encapsulating structure becomes the outstanding shield that gives.By the sealing of O type circle, cannot support the leakage problem under resistance high-pressure situations.Adopted pressure-sensitive bridge resistance, to be made on 17-4PH stainless steel pedestal, again pedestal is freezed in the interface end of stainless steel casing by techniques such as argon arc welding, electron beam, high energy laser beams, when pressure is introduced from the 17-4PH stainless steel pedestal back side, just leakage and the too small problem of transshipping have been overcome.
In high pressure sensor, there are at present two kinds of versions: a kind of is sputtered film structure both at home and abroad; Another kind is micro-clinkering structure of ultrathin strainometer.In the elastic membrane district of 17-4PH stainless steel pedestal, realize sputtered film structure and micro-clinkering structure, freeze and be connected together with stainless steel casing again, while guaranteeing pedestal back side pressurized, can stand several thousand kilograms of pressure and air tight, and in base construction, the positive force sensing resistance of making produces change in resistance because being subject to effect of stress.Sputtered film structure is in 17-4PH stainless steel pedestal elastomeric film surface, adopt sputtering technology, first at the silicon oxynitride film of stainless steel elastomeric film surface sputter one deck insulation, make insulation base, sputter constantan or platinum film in the above again, adopt photoetching and dry etching technology, constantan or platinum layer are etched into four force sensing resistances, then connect into a resistance bridge with metal connecting line.But this infrastructure cost is high, yield poorly, yield rate is low, consistance is poor, resistance to insulated electro is forced down, and is unwell to large-scale production.
Therefore oneself was replaced by micro-clinkering structure of ultrathin strainometer gradually in recent years.The ultrathin strainometer of using in micro-clinkering structure adopts the way manufacture that combines of integrated circuit planar technology and micromechanical process technology, can advise greatly and touch production, high conformity.But the at present domestic production that entirely maintains micro-clinkering structure by import of this ultrathin strainometer.
General monocrystalline-silicon pressure transducer, adopts the isolation of P-N knot between bridge resistance, at present, has P-N knot reverse leakage current, causes output temperature drift large, can not under hot environment, work.Therefore need to meet the required pressure sensor of sensor under high-temperature work environment, especially in Aero-Space war industry, have more active demand.And must, by the ohmic contact hole of aluminium silicon lead-in wire contact resistance end points, just likely form a complete Hui Sidun bridge road between force sensing resistance.Aluminium silicon internal lead is in conventional design, and lead-in wire usually can collapse from an ohmic contact hole to another ohmic contact hole and get over two steps that highly do not wait, if the slightly high fracture that will cause lead-in wire of step, component failure.
Therefore, how to design a kind of ultrathin strainometer that can be applied in high pressure, high-temp pressure sensor become domestic enterprise, producer current in the urgent need to.
Summary of the invention
For addressing the above problem, the object of the present invention is to provide a kind of good stability, can be applied to ultrathin SOI piezoelectric strain gauge in high pressure, high-temp pressure sensor and preparation method thereof.
The present invention solves the technical scheme that its problem adopts:
A kind of SOI piezoelectric strain gauge, comprise piezoelectric strain gauge, described piezoelectric strain gauge comprises SOI silicon-on-insulator, described SOI silicon-on-insulator comprises silicon substrate, silicon dioxide insulator film and silicon thin film from bottom to up successively, on described silicon thin film, be provided with the force sensing resistance of two or four, described force sensing resistance is provided with internal lead passage, in described internal lead passage, be provided with metal internal lead, also comprise the aluminium electrode for being connected with sensor chip, described force sensing resistance interconnects by metal internal lead and/or connects to form pressure measurement circuitry with aluminium electrode.
Further, described force sensing resistance is monocrystalline silicon force sensing resistance or polysilicon force sensing resistance.
Further, described silicon thin film is the P-type conduction layer that is mixed with boron atom.
Further, on the silicon thin film of described internal lead passage below, be formed with the dense boron diffusion matrix of its correspondence.
Further, described metal internal lead is aluminium silicon lead-in wire or chromium nickel gold wire.
Particularly, described silicon substrate and silicon thin film are comprised of monocrystalline silicon or polysilicon.
Further, the upper surface of described silicon thin film and force sensing resistance is coated with one deck silicon nitride film, and described silicon nitride film and silicon dioxide insulator film form compound inslation matrix.
As above-mentioned a kind of improvement, comprise two force sensing resistances, between described force sensing resistance, form half-bridge Hui Sidun metering circuit.
As above-mentioned another kind, improve, comprise four force sensing resistances, form each other full-bridge Hui Sidun metering circuit.
As above-mentioned another kind, improve, comprise two force sensing resistances, the two ends of each force sensing resistance are connected to form parallel independence to resistance by metal internal lead and aluminium electrode respectively.
Further, described piezoelectric strain gauge is arranged on the round and elastic film of 17-4PH stainless steel elastic base, described force sensing resistance is divided into two groups, and wherein one group of force sensing resistance is parallel with the tangent line of round and elastic film, and the tangent line of other one group of force sensing resistance and above-mentioned round and elastic film is perpendicular.
Preferably, described force sensing resistance is arranged at the peak stress district of round and elastic film edge.
Further, described piezoelectric strain gauge is connected as a single entity by micro-molten technology and the 17-4PH stainless steel elastic base of glass dust
A method for making for SOI piezoelectric strain gauge, is characterized in that comprising the following steps:
Step 1, get SOI silicon-on-insulator, described SOI silicon-on-insulator comprises two-layer monocrystalline silicon piece and the silicon dioxide insulator film between two-layer monocrystalline silicon, and the monocrystalline silicon piece attenuate on upper strata is become to 2-5 μ m silicon thin film;
Step 2, the Surface Creation oxide layer by thermal oxide at SOI silicon-on-insulator make concentrated boron area window by lithography in oxide layer, with boron latex source coated surfaces, by thermal diffusion, form dense boron diffusion matrix;
Step 3, mix boron atom in silicon thin film, become P-type conduction layer, and press the resistance designing requirement of force sensing resistance, regulate the size of P-type conduction layer square resistance;
Step 4, by thermal oxide regeneration oxide layer on the 2-5 μ of SOI silicon-on-insulator upper surface layer m silicon thin film, by photoetching and dry etching technology, anti-carve and form monocrystalline silicon force sensing resistance;
Step 5, at the electrode lead hole place of monocrystalline silicon force sensing resistance, make outward extending internal lead passage by lithography;
Step 6, at SOI silicon-on-insulator surface evaporation, go out Alpax layer, adopt photoetching technique, Alpax layer is etched into metal internal lead and aluminium electrode, make force sensing resistance mineralization pressure metering circuit.
Further, further comprising the steps of after step 6: to adopt corrosive liquid that the silicon substrate at the SOI silicon-on-insulator back side is thinned to 10-15 μ m.
Further, further comprising the steps of between step 4 and step 5:
At surface deposition one deck silicon nitride film of silicon thin film and monocrystalline silicon force sensing resistance, described silicon nitride film and silicon thin film form compound inslation matrix, monocrystalline silicon force sensing resistance are covered simultaneously.
Further, in step 5, adopt photoetching technique to make electrode lead hole window by lithography, first use F4C dry etching silicon nitride film, then with photoetching corrosive liquid, rinse the silicon dioxide layer in window.
Further, further comprising the steps of between step 4 and step 5, adopt photoetching technique to make a minute film trap window by lithography, then erode away a minute film trap.
Preferably, described piezoelectric strain gauge is installed in 17-4PH stainless steel elastomeric film surface, in the 17-4PH of stainless steel elastic base stainless steel elastomeric film surface, select peak stress district, by silk screen print method, glass dust emulsion is coated in to peak stress district, then stainless steel pedestal is placed on to suitable high-temperature region and gives processing, form the transparent glassy layer of skim, piezoelectric strain gauge is placed on to glassy layer surface, carry out high temperature and process again, strainometer is bonded together by glassy layer medium and stainless steel surface of elastomer.
The invention has the beneficial effects as follows:
A kind of SOI piezoelectric strain gauge that the present invention adopts, by the SOI film-type structure forming based on SOI silicon-on-insulator, its thickness can greatly reduce, it is only 10-15 micron, and because be formed with silicon dioxide insulator film between silicon substrate and silicon thin film, replaced the isolation of P-N knot, reduced device electric leakage at high temperature, thereby improved the operating temperature range of sensor, can be applicable to use in high-temp pressure sensor, in addition, the present invention by being provided with internal lead passage on force sensing resistance, force sensing resistance interconnects by the metal internal lead in internal lead passage and/or connects to form pressure measurement circuitry with aluminium electrode, therefore from force sensing resistance ohmic contact hole, below the aluminium internal lead to hot pressing pin, just there is not step, and metal internal lead and hot pressing pin all as force sensing resistance along stretching part, in full-bridge design, form an integral body together with all linking up in half-bridge design, can effectively improve the stability of piezoelectric strain gauge.
The method for making of a kind of SOI piezoelectric strain gauge that the present invention adopts, forms monocrystalline silicon or polysilicon membrane as force sensing resistance manufactured materials at silicon film surface.By semiconductor planar technique, form 2 or 4 force sensing resistances that electric property insulate completely.By metal internal lead, force sensing resistance is connected into half-bridge or full-bridge Hui Sidun circuit.Because metal internal lead is monocrystalline silicon or the walking of polysilicon layer surface at thick-boron doped, silicon dioxide insulator film resiativity is up to 1015 Ω-cm, and guaranteeing does not have electricity to leak between force sensing resistance.Therefore can be used for, in the working temperature war industry above up to 300 ℃, so the temperature coefficient at sensitivity and zero point has reached more than 10-6VB/ ℃, thering is the good characteristic of high-temperature low-drift.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and example, the invention will be further described.
Fig. 1 is SOI piezoelectric strain gauge structural representation of the present invention;
Fig. 2 is that SOI piezoelectric strain gauge of the present invention is arranged on the mounting structure schematic diagram on stainless steel pressure pedestal;
Fig. 3 is the compound version schematic diagram of 3 kinds of embodiment strainometers of the present invention;
Fig. 4 is position relationship and the stress distribution schematic diagram of round and elastic film of the present invention and force sensing resistance;
Fig. 5 is the schematic diagram of SOI silicon-on-insulator of the present invention;
Fig. 6 generates the schematic diagram of oxide layer on SOI silicon-on-insulator of the present invention;
Fig. 7 makes the schematic diagram of concentrated boron area window by lithography on SOI silicon-on-insulator of the present invention;
Fig. 8 is the schematic diagram that forms dense boron diffusion matrix on SOI silicon-on-insulator of the present invention;
Fig. 9 forms the schematic diagram of monocrystalline silicon force sensing resistance on SOI silicon-on-insulator of the present invention;
Figure 10 is the schematic diagram of cvd nitride silicon thin film on SOI silicon-on-insulator of the present invention;
Figure 11 is the schematic diagram of photoetching burst groove on SOI silicon-on-insulator of the present invention;
Figure 12 erodes away the schematic diagram of minute film trap on SOI silicon-on-insulator of the present invention;
Figure 13 is the schematic diagram of photoetching internal lead passage on SOI silicon-on-insulator of the present invention;
Figure 14 is the schematic diagram of AM aluminum metallization silicon alloy layer on SOI silicon-on-insulator of the present invention;
Figure 15 is the schematic diagram of photoetching aluminum lead and aluminium electrode on SOI silicon-on-insulator of the present invention;
Figure 16 is the schematic diagram that SOI silicon-on-insulator thinning back side of the present invention only divides film trap.
Embodiment
Shown in Fig. 1, a kind of SOI piezoelectric strain gauge of the present invention, comprise piezoelectric strain gauge 104, described piezoelectric strain gauge 104 comprises SOI silicon-on-insulator, described SOI silicon-on-insulator comprises that thickness is only the silicon substrate 1 of 10-15 μ m from bottom to up successively, thickness is that silicon dioxide insulator film 2 and the thickness of 1um is 2-5 μ m silicon thin film 3, on described silica membrane 2, adopt strong technology and the above-mentioned silicon thin film 3 of thinning technique formation 2-5 micron of closing of silicon silicon, wherein silicon substrate 1 and silicon thin film 3 are monocrystalline silicon thin film or polysilicon membrane, on silicon thin film 3, with oxidation photoetching dry etching technology, be formed with the force sensing resistance 4 that two or four electric property insulate completely, the upper surface of described silicon thin film 3 and force sensing resistance 4 is coated with one deck silicon nitride film 7, described silicon nitride film 7 forms compound inslation matrix with silicon dioxide insulator film 2, described silicon nitride film 7 and force sensing resistance 4 are provided with outward extending internal lead passage 41, on the silicon thin film 3 of described internal lead passage 41 belows, be formed with the dense boron diffusion matrix 6 of its correspondence, in described internal lead passage 41, be provided with metal internal lead 5, wherein metal internal lead 5 can be aluminium silicon lead-in wire or chromium nickel gold wire.Also comprise hot pressing pin 105 and aluminium electrode 51 for being connected with sensor chip, described force sensing resistance 4 is interconnected and/or is connected to form pressure measurement circuitry with aluminium electrode 51 by metal internal lead 5 and thick-boron doped diffusion matrix 6 lead-in wires.
Further, the material of described force sensing resistance 4 can form for monocrystalline silicon, polysilicon, constantan, platinum copper or other metal levels.
Further, described silicon thin film 3 is for being mixed with the P-type conduction layer of boron atom.
Further, the edge of described piezoelectric strain gauge is provided with minute film trap 9 of being convenient to carry out burst when making.
SOI silicon-on-insulator is a kind of silicon materials substrate of current domestic external enwergy large-scale production.It is by two wafer silicon chips, by (SBD) silicon-silicon bond, to close technology and reduction process is realized upper epidermis (a few micron thickness) silicon fiml and bottom silicon substrate 1(0.4mm – 1mm) between solid-fixed closing, the middle silicon dioxide insulator film 2 by one deck 1 micron thickness separates.This SOI silicon-on-insulator is widely used on high speed integrated circuit at present in the world.And the present invention is silicon substrate 1 substrate for the manufacture of the low drift piezoelectric strain gauge of super thin type high temperature.
When making or customize SOI silicon-on-insulator, the force sensing resistance 4 of upper epidermis adopts the body silicon of high concentrations to make material.Adopt high concentration body silicon to make force sensing resistance 4 materials, advantage is that Impurity Distribution is even.Because it is to make by the section of pulling of crystals ingot, does not have thermal diffusion or ion beam to inject and cause the phenomenon that Impurity Distribution is inhomogeneous.Force sensing resistance 4 resistances that guarantee Si Geqiao road are symmetry equivalent, guaranteed the advantages such as little, zero point at strainometer high conformity, the output of Hui Sidun bridge road zero point on electric property and sensitivity temperature coefficient are little.Shortcoming is that flexible property is poor.Thermal diffusion or ion beam inject and can regulate the resistance of square resistance to meet designing requirement by the diffusion technique that distributes again.
Between force sensing resistance 4, must, by the ohmic contact hole of aluminium silicon lead-in wire contact resistance end points, just likely form a complete Hui Sidun bridge road.Aluminium silicon internal lead is in conventional design, and lead-in wire usually can collapse from an ohmic contact hole to another ohmic contact hole and get over two steps that highly do not wait, if the slightly high fracture that will cause lead-in wire of step, component failure.In the present invention, adopt dense boron diffusion matrix 6 as extension matrix and hot pressing pin 105 matrixes of force sensing resistance 4 lead-in wires, therefore from force sensing resistance 4 ohmic contact hole, below the metal internal lead 5 to hot pressing pin 105, just there is not step, and metal internal lead 5 and hot pressing pin 105 all as force sensing resistance 4 along stretching part, in full-bridge design, form an integral body together with all linking up in half-bridge design, can effectively improve the stability of piezoelectric strain gauge.As shown in Figure 3.Ohmic contact hole, from being only originally that two contact holes very little 4 two end points of force sensing resistance expand as below metal internal lead 5 and hot pressing pin 105, be ohmic contact hole entirely, and metal internal lead 5 design sizes are 4um than the large 8um(hypothesis of Ohmic contact hole dimension lithography registration precision), in the design section of metal internal lead 5, adopt high concentration impurities source to carry out boron diffusion, guarantee that there is very high surface impurity concentration on surface, this just guarantees that metal internal lead 5 and ohmic contact hole have extraordinary Ohmic contact, have guaranteed the reliable and stable and high finished product rate of device.
Silicon dioxide is a kind of extraordinary insulator, but it has a kind of compressive stress coefficient, and when ultra-thin state is counted in strain, this compressive stress just becomes the deformation factor that can not ignore.The present invention is coated with one deck silicon nitride film 7 at the upper surface of described silicon thin film 3 and force sensing resistance 4, described silicon nitride film 7 forms compound inslation matrix with silicon dioxide insulator film 2, at the rise silicon nitride of stress of the topped one deck of silica surface, just can balance silicon dioxide compressive stress, avoid the distortion of strainometer, in addition force sensing resistance 4 is positioned in the middle of silicon nitride film 7 and silicon dioxide insulator film 2, has guaranteed the reliable and stable of force sensing resistance 4.
Shown in Fig. 2, also comprise 17-4PH stainless steel pedestal, described 17-4PH stainless steel pedestal claims again PH stainless steel elastic base, the extraordinary stainless steel material of a kind of 17-4PH elasticity coefficient, described elastic base 8 comprises cup 82, the middle front at described cup 82 tops is thinner stainless steel round and elastic film 81, on described round and elastic film 81, by pyroprocessing, form the transparent glassy layer of skim 83, described piezoelectric strain gauge 104 be placed on glassy layer 83 surface by after pyroprocessing with glassy layer 83, round and elastic film 81 forms micro-clinkering structure, make the piezoelectric strain gauge can be by glassy layer 83 and stainless steel round and elastic film 81 bonding being connected.Wherein in pressure base, be also provided with PCB wiring board 84, be arranged at that sensor chip on PCB wiring board 84 draws silk by aluminium or spun gold (not providing in figure) is connected with the aluminium electrode 51 of piezoelectric strain gauge.
Further, described force sensing resistance 4 is arranged at the peak stress district at round and elastic film 81 edges.
Described SOI piezoelectric strain gauge has respectively the embodiment of three kinds of different structures, and wherein Fig. 3 is the compound version schematic diagram of three kinds of piezoelectric strain gauges:
Embodiment 1, and described pressure-strain is counted half-bridge strainometer, and area is 1.5mm*0.5mm.Be applicable to the elastic base 8 that 17-4PH elastic membrane aperture is ¢ 3.3-3.5mm.Comprise two force sensing resistances 4, between described force sensing resistance 4, form half-bridge Hui Sidun metering circuit, when elastic base 8 back pressurized, wherein near the force sensing resistance 4 of round and elastic film 81 frames, be subject to the effect of negative stress, its resistance can diminish, the effect of receiving normal stress near the force sensing resistance 4 at round and elastic Mo81 center, it is large that its resistance becomes.When the half-bridge Hui Sidun metering circuit forming when this two force sensing resistances 4 and the fixed resistance in sensor chip are coupled to Hui Sidun full-bridge circuit, bridge road out of trim, Qiao road output terminal produces an electric signal that the pressure being subject to back is directly proportional.
If Vcc is supply voltage, △ R 1/ R 1=△ R 4/ R 4for edge resistance change rate, △ R 2/ R2=△ R 3/ R 3centered by resistance change rate, therefore stressed rear bridge output voltage is:
△?V=〔(△R 1/R 1)-(?△R 2/R2)〕+〔(△R 4/R 4)-(?△R 3/R 3)〕
When bridge resistance is under symmetric case, during R1=R2=R3=R4, stressed rear bridge output voltage is: △ V=2 ((△ R 1/ R 1)-(△ R 2/ R2)).
Above-mentioned half-bridge strainometer is subject to the restriction of round and elastic film 81 concrete sizes in the use.When elastic membrane diameter becomes large, R2 and R3 will depart from peak stress district, cause sensitivity decline and nonlinear factor to become large.This strainometer is widely application in the high pressure field of wide range.When transducer range requirement is lower, in order to guarantee certain sensitivity and signal output amplitude, in the situation that round and elastic film 81 thickness machining precisioies are restricted, only reliable increasing round and elastic film 81 area guarantees have enough sensitivity output.For example diameter is put into 10mm even larger above.In this case, above-mentioned half-bridge strainometer just cannot be suitable for.
Embodiment 2, and described pressure-strain is counted full-bridge strainometer, and area is 1mm 2.Comprise four force sensing resistances 4, force sensing resistance 4 forms full-bridge Hui Sidun metering circuit each other.As shown in Figure 4, two resistance R 2, R3 wherein parallel with the tangent line of round and elastic film 81, the tangent line perpendicular (being the radial direction of round and elastic film) of other two resistance R 1, R4 and above-mentioned round and elastic film 81, this full-bridge strainometer is used dirigibility large, is applicable to the micro-molten pressure transducer of high temperature of middle lower range.In the present invention, full-bridge strainometer just can make up the defect of above-mentioned half-bridge strainometer.Full-bridge strainometer is attached to round and elastic film 81 edge stress peak region by the micro-fusible of glass dust, had so both avoided the large winding degree effect brought because round and elastic film 81 areas are excessive, guaranteed again the linearity of sensor and enough sensitivity simultaneously.The resistance position of above-mentioned this cup type structure and stress distribution are as shown in Figure 4.As seen from the figure, radially more to approach edge output larger for resistance, and nonlinearity erron field is wider.
Embodiment 3, and described pressure-strain is counted the parallel double strain ga(u)ge that degree of freedom is very large, comprise two force sensing resistances 4, and the two ends of each force sensing resistance 4 are connected to form parallel independence to resistance by metal internal lead 5 and aluminium electrode 51 respectively.Because it is parallel double strain ga(u)ge, can paste in the peak stress district at round and elastic film 81 edges.It can independently paste into radial stress district, also can independently paste into tangential stress district.No matter round and elastic film 81 radiuses are much, can obtain best sensitivity and the linearity.
A method for making for above-mentioned SOI piezoelectric strain gauge, is characterized in that comprising the following steps:
1, make SOI silicon-on-insulator, described SOI silicon-on-insulator comprises that thickness is the two-layer monocrystalline silicon piece of 0.3-0.5 millimeter single-sided polishing, and a slice polished surface thermal oxide growth 1 micron thickness silicon dioxide insulator film 2 wherein, then at H 2sO 4: H 2o 2in=1:1 solution, soak several hours, make surface form a large amount of OH-atomic groups, then after cleaning, dry surface, immediately the polished surface of two monocrystalline silicon pieces is combined, from the pressurization of sheet center, two silicon chips are integrated.Be placed on again in 900 ° of C oxidation furnaces first wet-oxygen oxidation three hours, then dry-oxygen oxidation four hours, two silicon chips are bonded together firmly.The monocrystalline silicon piece attenuate on upper strata is become to 2-5 μ m one-tenth silicon thin film 3, and polished surface, SOI silicon-on-insulator become stand-by, as shown in Figure 5.Described SOI silicon-on-insulator also can adopt SIMOX technology or SMART-CUT technology to realize, but equipment requirement is relatively high.
2, Surface Creation 4000 oxide layers 101 at SOI silicon-on-insulator by thermal oxide, as shown in Figure 6, then in oxide layer 101, make concentrated boron area window 102 by lithography, as shown in Figure 7, with boron latex source coated surfaces, after oven for drying, in 1040 ℃ of boron diffusion furnaces, with nitrogen, protect thermal diffusion 30 minutes, form dense boron diffusion matrix 6, as shown in Figure 8; Then with rare HF solution, rinse surface boron silex glass.With four-point probe measurment, for sheet, guarantee square resistance R s<10 Ω/.
3, in 900 ° of C oxidation furnaces, with dry carrier of oxygen, make blanket gas, activation boron atom 30 minutes.Then rinse surface oxide layer, cleaning, drying is stand-by.
4, adopt ion beam implantttion technique or thermal diffusion technology, in silicon thin film 3, mix boron atom, become P-type conduction layer, and press the resistance designing requirement of force sensing resistance 4, regulate the size of P-type conduction layer square resistance, make it meet designing requirement.
5, by thermal oxide regeneration oxide layer on the 2-5 μ of SOI silicon-on-insulator upper surface layer m silicon thin film, by photoetching and dry etching technology, anti-carve and form monocrystalline silicon force sensing resistance 4,, make the thick thermal oxide layer of vast district exposure 1um beyond resistance area, as shown in Figure 9.
6, the silicon nitride film 7 at surface deposition one deck 1500 of silicon thin film 3 and monocrystalline silicon force sensing resistance 4 by LPCVD deposition technique, described silicon nitride film 7 forms compound inslation matrix with silicon thin film 3, monocrystalline silicon force sensing resistance is covered as shown in figure 10 simultaneously, can guarantee that force sensing resistance 4 has the good special domestic animals such as high temperature resistant, high pressure resistant, stable.
7, adopt photoetching technique, on silicon nitride film 7, the position of minute film trap 9 makes a minute film trap window 91 by lithography, as shown in figure 11, first use the silicon nitride film 7 in F4C dry etching window, then with photoetching corrosive liquid, rinse the silicon dioxide layer in window, erode away minute film trap 9, as shown in figure 12.
8, adopt photoetching technique to make outward extending electrode lead hole window by lithography at the electrode lead hole place of monocrystalline silicon force sensing resistance, first use F4C dry etching silicon nitride film 7, then with photoetching corrosive liquid, rinse the silicon dioxide layer in window, form internal lead passage 41, as shown in figure 13.
9,, at SOI silicon-on-insulator surface AM aluminum metallization silicon alloy layer 103, thickness 1.5-2.0um, as shown in figure 14, adopts photoetching technique, and Alpax layer 103 is etched into metal internal lead 5 and aluminium electrode 51, makes force sensing resistance 4 mineralization pressure metering circuits, as shown in figure 15.
10, front is protected, the back side adopts KOH corrosive liquid corrosion silicon substrate 1 to 10-15um, makes piezoelectric strain gauge separated, forms the SOI high-temperature low-drift piezoelectric strain gauge of monolithic, as shown in figure 16.
11, on the surface, stainless steel elastic region of stainless steel elastic base 8, select peak stress district, by silk screen print method, glass dust emulsion is coated in to peak stress district, then stainless steel elastic base 8 is placed on to suitable high-temperature region and gives processing, form the transparent glassy layer 83 of skim, piezoelectric strain gauge 104 is placed on to glassy layer 83 surfaces, carry out high temperature and process again, strainometer is bonded together by glassy layer 83 and stainless steel elastic base 8 surfaces.
When making above-mentioned pressure-strain timing, need thickness be 0.4-0.6mm six inch wafers through attenuates, be finally separated into 23500 thickness only 10-15um size only the ultra-thin ultramicroscopic strainometer of 0.5*1.5mm be a technological operation that difficulty is higher.Concrete technology flow process is as follows:
1, in environment purification, first, with Primer reagent even front that is coated in wafer on glue evenning table of imported from America, on 205 ℃ of hot plates, cure 5 minutes.In operating process, prevent that dust from entering silicon chip surface, otherwise will cause dust point to form a pin hole around, corrosive liquid will enter into silicon chip surface from pin hole, and around a sheet of strainometer is destroyed to cause dust, causes component failure.
2, in environment purification, then use the front of Protex reagent even painting wafer on glue evenning table of imported from America, on 205 ℃ of hot plates, cure 5 minutes.
3, this wafer is fixed in homemade special fixtures, goes up mordant, corrosion of silicon, until minute film trap 9 exposures of strainometer, etch-stop.
4, the wafer after corrosion is placed in organic solvent, wafer is just separated into numerous little foil gauge automatically, through anhydrous alcohol solution, be attached to again the organic solvent on strainometer surface, again strainometer is placed in homemade flushing vessel container, with Gao Jing (ρ=18M Ω) deionized water rinsing strainometer, about about half an hour, until the resistivity of water >10 M Ω flowing out stops rinsing.
5, homemade flushing vessel being put into drying box together with strainometer dries stand-by.
6, strainometer is poured on clean filter paper, microscopy strainometer, that scraps removes, the counting warehouse-in staying.
The above, be preferred embodiment of the present invention, and the present invention is not limited to above-mentioned embodiment, as long as it reaches technique effect of the present invention with identical means, all should belong to protection scope of the present invention.

Claims (10)

1. a SOI piezoelectric strain gauge, comprise piezoelectric strain gauge, it is characterized in that: described piezoelectric strain gauge comprises SOI silicon-on-insulator, described SOI silicon-on-insulator comprises silicon substrate from bottom to up successively, silicon dioxide insulator film and silicon thin film, on described silicon thin film, be provided with the force sensing resistance of two or four, described force sensing resistance is provided with internal lead passage, in described internal lead passage, be provided with metal internal lead, also comprise the aluminium electrode for being connected with sensor chip, described force sensing resistance interconnects by metal internal lead and/or connects to form pressure measurement circuitry with aluminium electrode.
2. a kind of SOI piezoelectric strain gauge according to claim 1, is characterized in that: the dense boron diffusion matrix that is formed with its correspondence on the silicon thin film of described internal lead passage below.
3. a kind of SOI piezoelectric strain gauge according to claim 1, is characterized in that: the upper surface of described silicon thin film and force sensing resistance is coated with one deck silicon nitride film, and described silicon nitride film and silicon dioxide insulator film form compound inslation matrix.
4. a kind of SOI piezoelectric strain gauge according to claim 1, it is characterized in that: described piezoelectric strain gauge is arranged on the round and elastic film of 17-4PH stainless steel elastic base, described force sensing resistance is divided into two groups, wherein one group of force sensing resistance is parallel with the tangent line of round and elastic film, and the tangent line of other one group of force sensing resistance and above-mentioned round and elastic film is perpendicular.
5. a kind of SOI piezoelectric strain gauge according to claim 4, is characterized in that: described force sensing resistance is arranged at the peak stress district of round and elastic film edge.
6. a kind of SOI piezoelectric strain gauge according to claim 4, is characterized in that: described piezoelectric strain gauge is connected as a single entity by micro-molten technology and the 17-4PH stainless steel elastic base of glass dust.
7. a method for making for the arbitrary described SOI piezoelectric strain gauge of claim 1 to 6, is characterized in that comprising the following steps:
Step 1, get SOI silicon-on-insulator, described SOI silicon-on-insulator comprises two-layer monocrystalline silicon piece and the silicon dioxide insulator film between two-layer monocrystalline silicon, and the monocrystalline silicon piece attenuate on upper strata is become to 2-5 μ m silicon thin film;
Step 2, the Surface Creation oxide layer by thermal oxide at SOI silicon-on-insulator make concentrated boron area window by lithography in oxide layer, with boron latex source coated surfaces, by thermal diffusion, form dense boron diffusion matrix;
Step 3, mix boron atom in silicon thin film, become P-type conduction layer, and press the resistance designing requirement of force sensing resistance, regulate the size of P-type conduction layer square resistance;
Step 4, by thermal oxide regeneration oxide layer on the 2-5 μ of SOI silicon-on-insulator upper surface layer m silicon thin film, by photoetching and dry etching technology, anti-carve and form monocrystalline silicon force sensing resistance;
Step 5, at the electrode lead hole place of monocrystalline silicon force sensing resistance, make outward extending internal lead passage by lithography;
Step 6, at SOI silicon-on-insulator surface evaporation, go out Alpax layer, adopt photoetching technique, Alpax layer is etched into metal internal lead and aluminium electrode, make force sensing resistance mineralization pressure metering circuit.
8. the method for making of a kind of SOI piezoelectric strain gauge according to claim 7, is characterized in that: further comprising the steps of between step 4 and step 5:
At surface deposition one deck silicon nitride film of silicon thin film and monocrystalline silicon force sensing resistance, described silicon nitride film and silicon thin film form compound inslation matrix, monocrystalline silicon force sensing resistance are covered simultaneously.
9. the method for making of a kind of SOI piezoelectric strain gauge according to claim 8, it is characterized in that: in step 5, adopt photoetching technique to make electrode lead hole window by lithography, first use F4C dry etching silicon nitride film, then with photoetching corrosive liquid, rinse the silicon dioxide layer in window.
10. the method for making of a kind of SOI piezoelectric strain gauge according to claim 7, is characterized in that: further comprising the steps of between step 4 and step 5, employing photoetching technique makes a minute film trap window by lithography, then erodes away a minute film trap.
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