CN108871652A - A kind of micromation high temperature resistant high dynamic pressure sensor - Google Patents
A kind of micromation high temperature resistant high dynamic pressure sensor Download PDFInfo
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- CN108871652A CN108871652A CN201810549936.8A CN201810549936A CN108871652A CN 108871652 A CN108871652 A CN 108871652A CN 201810549936 A CN201810549936 A CN 201810549936A CN 108871652 A CN108871652 A CN 108871652A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0681—Protection against excessive heat
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/141—Monolithic housings, e.g. molded or one-piece housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L2009/0066—Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means
- G01L2009/0067—Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means with additional isolating diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L2009/0066—Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means
- G01L2009/0069—Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means the transducer being mounted on a flexible element
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A kind of micromation high temperature resistant high dynamic pressure sensor, including sensor probe are equipped with sensor chip in sensor probe, sensor chip is fixed by refractory ceramics glue, sensor probe is connected with metal tungsten wire, and metal tungsten wire passes through sealing plate, and sealing plate is connected with sensor probe；Sensor probe front end face is provided with tracting pressuring hole, tracting pressuring hole with inside sensor probe pressure channel and square shaped sensor device chip mounting groove be connected to, the rear end of sensor chip mounting groove is sensor vacuum chamber, is equipped with lead end of the metal tungsten wire as pressure sensor in the interior of sensor probe；Sensor chip is square, arrange that there are four sensitive resistances in same direction in sensor chip front, there are a square cavities at the back side of sensor chip, corresponding square cavities are square sensitive thin films, pressure is applied on square sensitive thin film by tracting pressuring hole, the present invention is small in size, high temperature resistant, responds fastly, can be used in measuring stagnation pressure and static pressure.
Description
Technical field
The present invention relates to pressure sensor technique field, in particular to a kind of micromation high temperature resistant high dynamic pressure sensing
Device.
Background technique
Sensor technology is the one of the important signs that of national economic development level, and wherein pressure sensor is current using most
It is extensive a kind of.The development of semiconductor technology causes the conventional pressure sensor based on mechanical structure gradually to be based on partly leading
Replaced the micromation pressure sensor of body silicon materials, silicon micropressure sensor has spy small in size, precision is high, integrated
Point.Domestic and foreign scholars have carried out one after another based on Buddha's warrior attendant on polycrystalline silicon semiconductor, monocrystalline silicon, silicon-on-insulator, silicon on sapphire, silicon
The Study on pressure sensor of all types of materials such as stone film.With the expansion of application and research range, can work in extreme ring
Extraordinary pressure sensor in border becomes current focus of attention.Wherein, with the pressure sensing of high temperature resistant and high dynamic characteristic
Device has significant application value in fields such as aerospace, nuclear energy technology, petrochemical industry, geothermal exploration and automotive electronics.But
The above-mentioned micromation pressure sensor based on semiconductor silicon material since high temperature electric leakage, multiple material thermal stress mismatch and
The defects of pyroplastic deformability, it tends to be difficult to work normally, be not able to satisfy in more high temperature resistant fields in the environment more than 400 DEG C
Application demand under closing.
English, Mei Deng developed country more early carry out high-temperature-resistance pressure sensor and study and grasped core technology, such as the U.S.
Kulite company and the Oxsensis company of Britain have mature high-temperature-resistance pressure sensor product.But these sensors
It is at high cost, to China carry out technology blockage.Domestic also carried out is ground about the advanced technology of high-temperature-resistance pressure sensor within nearly 5 years
Study carefully, related research result has greatly pushed the development of China's high-temperature-resistance pressure sensor technology.China is in aerospace, petroleum
The fields such as chemical industry have urgent technical need to high temperature resistant, high dynamic pressure sensor.Therefore, high temperature resistant, high dynamic are researched and developed
Micromation pressure sensor have great research significance and wide application prospect.
Summary of the invention
In order to overcome the disadvantages of the above prior art, it is dynamic that the object of the present invention is to provide a kind of micromation high temperature resistant height
State pressure sensor has the advantages that small in size, high temperature resistant, response are fast, and can be respectively used to measurement stagnation pressure and static pressure.
In order to achieve the above object, the technical scheme adopted by the invention is as follows：
A kind of micromation high temperature resistant high dynamic pressure sensor 1, including sensor probe 2, the inside peace of sensor probe 2
Equipped with sensor chip 4, sensor chip 4 is fixed in sensor probe 2 by refractory ceramics glue 5, and sensor probe 2 connects
It is connected to metal tungsten wire 3, metal tungsten wire 3 passes through sealing plate 6, and sealing plate 6 and sensor probe 2 link together.
The front end face of the sensor probe 2 is provided with tracting pressuring hole 7, and the pressure inside tracting pressuring hole 7 and sensor probe 2 is logical
Road 11 is connected to square shaped sensor device chip mounting groove 12, and the front end face of sensor probe 2 and side pass through rounding corner structure 10
Realize transition, the rear end of sensor chip mounting groove 12 is sensor vacuum chamber 13, is installed in the interior of sensor probe 2
There is lead end of the metal tungsten wire 3 as pressure sensor.
The sensor chip 4 is square, and in the front of sensor chip 4, there are four N-types for arrangement in same direction
6H-SiC sensitive resistance 14, each N-type 6H-SiC sensitive resistance 14 are connected with two metal pads 15, the back of sensor chip 4
There are a square cavities 22 in face, and corresponding square cavities 22 are square sensitive thin film 25, four N-type 6H-SiC sensitive electricals
Resistance 14 is distributed in the four edges middle position of square sensitive thin film 25, and the surrounding of square cavities 22 is by N-type 6H-SiC
The sensor chip substrate 21 that material is constituted；On the corresponding square sensitive thin film 25 of sensor back side square cavities 22
There is one layer of p-type 6H-SiC insulating layer 20, the upper surface of p-type 6H-SiC insulating layer 20 is N-type 6H-SiC sensitive resistance 14, N-type 6H-
The surface of SiC sensitive resistance 14 is covered by one layer of silicon oxide film 19, the not oxidized silicon thin film 19 of N-type 6H-SiC sensitive resistance 14
The region of covering is connect with metal pad 15, and metal pad 15 is successively to be covered to be formed by three-layer metal, this three-layer metal from
Up to it is lower be Pt metal 16, TiN 17 and metal Ti 18 respectively.
Pressure P is applied on the square sensitive thin film 25 of sensor chip 4 by tracting pressuring hole 7, on sensor chip 4
Metal pad 15 is connect by spun gold 24 with metal tungsten wire 3, after sealing plate 6 is by refractory ceramics glue 5 and sensor probe 2
End face encapsulates and forms vacuum chamber 13.
The sensor probe 2 and 6 material therefor of sealing plate is aluminium nitride ceramics material.
The refractory ceramics glue 5 is made using inorganic nano material through polycondensation reaction.
Beneficial effects of the present invention are：
1, the present invention has outstanding high temperature resistance, can be in aero-engine, gas turbine and oil drilling etc.
It is worked normally in internal high temperature environment.N-type 6H-SiC sensitive resistance 14 of the present invention, p-type 6H-SiC insulating layer 20, square are sensitive
Structure including film 25 and sensor chip substrate 21 is manufactured using full SiC material, and one side SiC material is a kind of
Outstanding high temperature semiconductors material, has excellent heat resistanceheat resistant plastic deformation (up to 1000 DEG C or so) and electric leakage ability resistant to high temperatures is (high
Leakage current is ignored when 300 DEG C), can in 600 DEG C or more of hot environment steady operation；On the other hand, by different
The method of matter extension makes p-type 6H-SiC insulating layer and N-type 6H-SiC sensitive resistance respectively in 6H-SiC film square, makes to pass
Sensor chip is full SiC structure, overcomes the type pressure sensors such as silicon in conventional semiconductors (SOI), silicon on sapphire (SOS)
Chip is due to the phenomenon that generating thermal stress mismatch and damage there are multiple material；In addition, sensor metal pad selects " Ti-
TiN-Pt " trilaminate material realizes effective connection of chip sensitive resistance and metal pad, and this connection type can effectively inhibit
Elements diffusion between sensitive resistance and metal pad under the high temperature conditions solves the problems, such as sensor chip high temperature failure, makes
Designed sensor chip has outstanding high-temperature stability.
2, inventive sensor has higher intrinsic frequency and dynamic response capability.On the one hand, common pressure sensing
Device chip mostly uses round sensitive thin film structure, and the square sensitive thin film that sensor chip uses in the present invention is than round sense
Ironed film has smaller amount of deflection under the same conditions, and it is rigid to further increase rectangular sensitive thin film by Optimal Structure Designing
Degree makes chip have faster dynamic response capability to make sensor chip obtain high natural frequency；On the other hand, semiconductor
Silicon materials are the common used materials of pressure sensor, and rapidoprint of the 6H-SiC as sensor chip is used in the present invention, 6H-
SiC has superior mechanical performance, and Young's modulus and yield limit are 2 times and 3 times of semiconductor silicon material respectively, makes to sense
Device chip has very high rigidity, to improve the intrinsic frequency of sensor and reduce the deformation deflection of sensitive thin film, makes to sense
Device has higher intrinsic frequency and outstanding dynamic response capability.Also, have benefited from SiC material with chemical stability it is good with
Corrosion resistant advantage, sensor chip can be sealed directly in AlN ceramic shell without using filling silicon oil in the present invention
Or the isolation of other chips and safeguard measure, the cavity at the sensor chip back side can directly be in communication with the outside and keep sensor sensing thin
Film experiences ambient pressure, and this encapsulating structure effectively prevents sacrificing sensor due to carrying out insulation blocking to chip in the past and moving
The shortcomings that state responding ability, shortens ambient pressure to the response distance between sensor chip sensitive thin film, makes to sense utensil
Have the advantages that dynamic response is fast and the loss of signal is small.
3, inventive sensor has good corrosion-resistant and impact property.On the one hand, sensor chip passes through resistance to height
Warm ceramic glue is sealed in sensor probe and sealing plate, is in sensor chip front-side circuit in vacuum chamber, sensor back
Sensitive thin film corresponding to the cavity of face bears ambient pressure, and sensor after encapsulation has absolute pressure measurement capability, can be every
Exhausted external dust, steam and other corrosive substances enter sensor internal and damage to sensor chip；On the other hand,
SiC material has good mechanical property and chemical stability, and simultaneous selection and SiC material have the AlN of close physical characteristic
Ceramics are used as sensor package casing, make to keep good thermal stability between chip and shell, have heat shock resistance and corrosion resistant
The characteristics of erosion, sensor environment good weatherability, long service life.
4, present invention employs the sides that square sensitive thin film structure and sensitive resistance are arranged along sensitive thin film surrounding midpoint
Case overcomes technical problem conflicting between transducer sensitivity and rigidity, and sensor is made to obtain high rigidity and highly sensitive
The advantages of degree output.Pressure sensor generallys use the scheme that circular membrane and sensitive resistance are arranged along a straight line, and (sensitive resistance is along one
Straight line is arranged in the center and both sides of circular film respectively), and the square film that the present invention uses than circular membrane in identical item
There is higher rigidity and better stress concentration phenomenon under part, can be filled under the premise of guaranteeing sensor chip stress safety
Divide the variable quantity for improving sensitive resistance resistance value using stress concentration effect, sensor is made to obtain higher sensitivity；For pros
For shape film, stress be in full symmetric distribution, and at square membrane edge center longitudinal stress and lateral stress difference
Value is maximum, selects to arrange that sensitive resistance can further increase the survey of sensor at the edge center of square membrane four edges
Measure sensitivity.
Detailed description of the invention
Fig. 1 is monnolithic case schematic diagram of the invention.
Fig. 2 is composition schematic diagram of the invention.
Fig. 3 is the schematic diagram of internal structure of inventive sensor probe.
Fig. 4 is the outline structural diagram of inventive sensor chip.
Fig. 5 is inventive sensor chip profile structural schematic diagram.
Fig. 6 is the rectangular diaphragm surface stress distribution curve of the present invention.
Fig. 7 is the package structure diagram of sensor.
Fig. 8 is sensor chip processing process figure.
Specific embodiment
Invention is further described in detail with reference to the accompanying drawings and examples.
Referring to Figures 1 and 2, a kind of micromation high temperature resistant high dynamic pressure sensor 1, including sensor probe 2, sensor
The inside of probe 2 is equipped with sensor chip 4, and sensor chip 4 is fixed in sensor probe 2 by refractory ceramics glue 5,
Sensor probe 2 is connected with metal tungsten wire 3, and metal tungsten wire 3 passes through sealing plate 6, and sealing plate 6 and sensor probe 2 are connected to one
It rises.The diameter of sensor 1 is 6mm after encapsulation, and 2 front end faces of probe to 6 rear end face length of sealing plate are 10mm.The sealing plate
6 be round pie, there is 4 tungsten wire leg through-holes 9, the rear end face band rounding corner structure 23 of sealing plate 6 in sealing plate 6.
The sensor probe 2 and 6 material therefor of sealing plate is aluminium nitride ceramics material, aluminium nitride ceramics thermal conductivity
Height, good mechanical property, High anti bending strength, and possess with thermal expansion coefficient similar in carbofrax material, can guarantee sensor
Possess consistent heat deformability after assembly in the high temperature environment, avoids thermal stress to sensor accuracy class and sensor safe
It is adversely affected caused by property.
The refractory ceramics glue 5 is made using inorganic nano material through polycondensation reaction, and high temperature resistant inorganic nanometer is belonged to
Compound binding agent, the binder are that pH value is neutral suspension/dispersion, and cohesive force is strong and non-corrosive to sensor chip,
Good adhesive property and corrosion resistance, long service life can be kept at a high temperature of 1800 DEG C；In the side aluminium nitride ceramics (AlN)
Pars intramuralis is embedded in metal tungsten wire 3 and is used as sensor external lead end, and tungsten fusing point is 3410 DEG C, and can satisfy hot environment makes
With requiring.
Referring to Fig. 3, the front end face of the sensor probe 2 is provided with tracting pressuring hole 7, inside tracting pressuring hole 7 and sensor probe 2
Pressure channel 11 be connected to square shaped sensor device chip mounting groove 12, the front end face of sensor probe 2 and side pass through rounding
Corner structure 10 realizes transition, and the rear end of sensor chip mounting groove 12 is sensor vacuum chamber 13, in the side wall of sensor probe 2
Inside is equipped with lead end of the metal tungsten wire 3 as pressure sensor.
Referring to Fig. 4 and Fig. 5, the sensor chip 4 is square, the front of sensor chip 4 in same direction
There are four N-type 6H-SiC sensitive resistance 14, each N-type 6H-SiC sensitive resistances 14 to be connected with two metal pads 15 for arrangement, passes
There are a square cavities 22 at the back side of sensor chip 4, and corresponding square cavities 22 are square sensitive thin film 25, four N
Type 6H-SiC sensitive resistance 14 is distributed in the four edges middle position of square sensitive thin film 25, the surrounding of square cavities 22
It is the sensor chip substrate 21 being made of N-type 6H-SiC material；The corresponding square of square cavities 22 at the sensor back side
Sensitive thin film 25 has one layer of p-type 6H-SiC insulating layer 20 above, and the upper surface of insulating layer 20 is N-type 6H-SiC sensitive resistance 14, N-type
The surface of 6H-SiC sensitive resistance 14 is covered by one layer of silicon oxide film 19, and the not oxidized silicon of N-type 6H-SiC sensitive resistance 14 is thin
The region that film 19 covers is connect with metal pad 15, and metal pad 15 is successively to be covered to be formed by three-layer metal, this three layers of gold
Category is Pt metal 16, TiN 17 and metal Ti 18 respectively from top to bottom.
Referring to Fig. 6, paths an AB, A, B is taken to be square respectively in the x-direction in the centre of square sensitive thin film 25 quick
Feel the midpoint on 25 or so two sides of film, O is square the center of sensitive thin film 25, in square sensitive thin film 25 by outside
Stress σ when pressure acts on, at the upper any point AB in the x-directionxStress σ in the y-directionyVariation tendency parabolically tie
Structure, the components of stress σ on square 25 surface of sensitive thin filmxAnd σyAxisymmetricly about the center line of square sensitive thin film 25
Distribution；On same path, σxVariation tendency be greater than σyVariation tendency；On the left and right sides boundary of square sensitive thin film 25
On point, σxGreater than σy, belong to opposite stress area on numerical value is positive and negative, and in the center of square sensitive thin film 25, σxWith
σyIt is equal；This feature shows that the N-type 6H-SiC sensitive resistance 14 on square sensitive thin film 25 should be arranged in square sensitivity
Four side centers of film 25, the stress distribution of the position are more concentrated, and the sensitivity for enhancing sensor is conducive to.
Referring to Fig. 7, sensor chip 4 is mounted on the chip mounting groove inside sensor probe 2 by refractory ceramics glue 5
In 12, ambient pressure P is acted directly on the square sensitive thin film 25 of sensor chip 4 by tracting pressuring hole 7, sensor chip
Metal pad 15 on 4 is realized by spun gold 24 and metal tungsten wire 3 to be connected, shape between sensor chip 4 and sensor sealing plate 6
At vacuum chamber 13, metal tungsten wire 3 is installed in the interior of vacuum chamber 13.
Referring to Fig. 8, the fabrication processing of the pressure sensor chip 4 is：1. preparing N-type 6H-SiC substrate 21；
2. N-type 6H-SiC substrate 21 is thinned；3. 21 upper surface homoepitaxy of N-type 6H-SiC substrate and adulterate form p-type 6H-SiC
Insulating layer 20 and N-type 6H-SiC resistive layer 14；4. dry etching obtains N-type 6H-SiC sensitive resistance 14；5. N-type 6H-SiC is sensitive
14 surface thermal oxide of resistance forms silicon dioxide layer 19；6. wet etching silicon dioxide layer 19 forms metal lead wire window；7. so
" Pt-TiN-Ti " system metal sputtering is carried out afterwards；8. patterned metal layer forms metal pad 15；9. dry method deep etching 6H-SiC
Substrate 21 forms back side cavity 22 and square sensitive thin film 25.Wherein, in step, 8. metallic layer graphic forms metal pad
Ohmic contact intensity between metal pad 15 and 6H-SiC sensitive resistance 14 in order to further increase after 15, is moved back
Fire processing；Using electric plating method in 6H-SiC surface production one to be etched before step 9. dry etching 6H-SiC substrate 21
Layer W metal is as exposure mask, due to 6H-SiC poorly conductive, first with the method for metal sputtering in 6H-SiC table before electroplated Ni
Face respectively makes one layer of metal Cr and metal Au；It is first clear with ethyl alcohol and acetone soln in step 9. dry etching 6H-SiC substrate
Then clean substrate surface carries out plasma etching clean substrate surface again with oxygen, to avoid micro- masking effect.
Claims (4)
1. a kind of micromation high temperature resistant high dynamic pressure sensor (1), including sensor probe (2), it is characterised in that：Sensor
The inside of probe (2) is equipped with sensor chip (4), and sensor chip (4) is fixed on sensor by refractory ceramics glue (5)
Pop one's head in (2) in, sensor probe (2) is connected with metal tungsten wire (3), metal tungsten wire (3) pass through sealing plate (6), sealing plate (6) and
Sensor probe (2) links together；
The front end face of the sensor probe (2) is provided with tracting pressuring hole (7), the pressure of tracting pressuring hole (7) and sensor probe (2) inside
Power channel (11) is connected to square shaped sensor device chip mounting groove (12), and the front end face of sensor probe (2) and side are by falling
Rounded structure (10) realizes transition, and the rear end of sensor chip mounting groove (12) is sensor vacuum chamber (13), visits in sensor
The interior of head (2) is equipped with lead end of the metal tungsten wire (3) as pressure sensor；
The sensor chip (4) is square, and in the front of sensor chip (4), there are four N-types for arrangement in same direction
6H-SiC sensitive resistance (14), each N-type 6H-SiC sensitive resistance (14) are connected with two metal pads (15), sensor chip
(4) there is a square cavities (22) at the back side, and corresponding square cavities (22) are square sensitive thin film (25), four N
Type 6H-SiC sensitive resistance (14) is distributed in the four edges middle position of square sensitive thin film (25), square cavities (22)
Surrounding be the sensor chip substrate (21) being made of N-type 6H-SiC material；It is right in sensor back side square cavities (22)
The square sensitive thin film (25) answered has one layer of p-type 6H-SiC insulating layer (20), the upper surface of p-type 6H-SiC insulating layer (20) above
It is N-type 6H-SiC sensitive resistance (14), the surface of N-type 6H-SiC sensitive resistance (14) is covered by one layer of silicon oxide film (19), N
The region of type 6H-SiC sensitive resistance (14) not oxidized silicon thin film (19) covering is connect with metal pad (15), metal pad
It (15) is successively to be covered to be formed by three-layer metal, this three-layer metal is Pt metal (16), TiN (17) and gold respectively from top to bottom
Belong to Ti (18).
2. a kind of micromation high temperature resistant high dynamic pressure sensor (1) according to claim 1, it is characterised in that：Pressure P
It is applied on the square sensitive thin film (25) of sensor chip (4) by tracting pressuring hole (7), the metal on sensor chip (4)
Pad (15) is connect by spun gold (24) with metal tungsten wire (3), and sealing plate (6) is visited by refractory ceramics glue (5) and sensor
The rear end face of head (2) encapsulates and forms vacuum chamber (13).
3. a kind of micromation high temperature resistant high dynamic pressure sensor (1) according to claim 1, it is characterised in that：It is described
Sensor probe (2) and sealing plate (6) material therefor be aluminium nitride ceramics material.
4. a kind of micromation high temperature resistant high dynamic pressure sensor (1) according to claim 1, it is characterised in that：It is described
Refractory ceramics glue (5) be made through polycondensation reaction using inorganic nano material.
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| CN201810549936.8A CN108871652B (en) | 2018-05-31 | 2018-05-31 | Miniaturized high-temperature-resistant high-dynamic pressure sensor |
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| CN201810549936.8A CN108871652B (en) | 2018-05-31 | 2018-05-31 | Miniaturized high-temperature-resistant high-dynamic pressure sensor |
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| CN110044541A (en) * | 2019-05-27 | 2019-07-23 | 西安石油大学 | A kind of fiber bragg grating pressure sensor based on rectangular diaphragm |
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| CN110702280A (en) * | 2019-10-18 | 2020-01-17 | 西安石油大学 | High-sensitivity fiber grating pressure sensor based on square diaphragm |
| CN111707404A (en) * | 2020-05-28 | 2020-09-25 | 西安交通大学 | High-temperature-resistant silicon carbide pressure sensor and preparation method thereof |
| CN113624394A (en) * | 2020-05-08 | 2021-11-09 | 精量电子（深圳）有限公司 | Pressure sensor |
| CN113697765A (en) * | 2021-08-25 | 2021-11-26 | 中国电子科技集团公司第四十九研究所 | Differential pressure resonance pressure sensitive chip probe of vacuum packaging structure and packaging method |
| CN114720044A (en) * | 2021-05-17 | 2022-07-08 | 中国核动力研究设计院 | Static pressure measuring device, resin particle layered liquid level measuring device and method |
| CN115342954A (en) * | 2022-08-23 | 2022-11-15 | 西安交通大学 | MEMS high-temperature-resistant pressure sensor based on optical-mechanical-electrical-thermal multi-physical-field coupling |
| CN115557463A (en) * | 2022-10-28 | 2023-01-03 | 深圳市希立仪器设备有限公司 | Pressure sensor chip, preparation method thereof and pressure sensor |
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| CN115557463A (en) * | 2022-10-28 | 2023-01-03 | 深圳市希立仪器设备有限公司 | Pressure sensor chip, preparation method thereof and pressure sensor |
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