CN111337083A - High-temperature graphene pressure/temperature integrated sensor - Google Patents
High-temperature graphene pressure/temperature integrated sensor Download PDFInfo
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- CN111337083A CN111337083A CN202010277704.9A CN202010277704A CN111337083A CN 111337083 A CN111337083 A CN 111337083A CN 202010277704 A CN202010277704 A CN 202010277704A CN 111337083 A CN111337083 A CN 111337083A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0092—Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
Abstract
A high-temperature graphene pressure/temperature integrated sensor can normally work under the environment with the temperature of 1200 ℃ and the pressure of 3MPa, and comprises: a package housing; the ceramic end cover is arranged at the top of the packaging shell, and a plurality of through holes are formed in the ceramic end cover to form a porous structure; the substrate is arranged at the bottom of the inner side of the packaging shell; the detection assembly is arranged on the substrate and used for detecting pressure and temperature. According to the invention, on the basis of the original temperature and pressure sensor, the nano film containing graphene is used for replacing other metal materials or semiconductor materials, so that the temperature measuring interval of the temperature sensor is greatly increased, and the response speed of the device is effectively increased due to the high thermal conductivity of the graphene material. Temperature versus pressure in-situ compensation results in a higher accuracy of the pressure signal.
Description
Technical Field
The invention relates to the technical field of high-temperature pressure and temperature testing, in particular to a high-temperature graphene pressure/temperature integrated sensor.
Background
The improvement of the living standard of human beings promotes the continuous development of science and technology. Nowadays, in many fields, the requirements for monitoring pressure and temperature are increasing, and especially for measurement under long-time high-temperature severe environment is one of the important problems facing at present.
Pressure sensors that are currently in widespread use include ceramic pressure sensors, stainless steel pressure sensors, and MEMS pressure sensors. The ceramic pressure sensor has wide application in the fields of automobiles, industry and the like; the stainless steel pressure sensor is suitable for various severe working conditions such as mines, ships and the like; among the MEMS pressure sensors, the diaphragm package is most widely used and is the main type of industrial pressure sensor.
The ceramic is a recognized material with high elasticity, corrosion resistance, abrasion resistance, impact resistance and vibration resistance, and the pressure sensor manufactured based on the ceramic material has better stability and corrosion resistance and can stably work in the environment of-40-125 ℃; the most widely used ceramic piezoresistive pressure sensors are of the concave membrane type, mainly thanks to their simpler manufacturing process and cost. However, the concave membrane type pressure sensing has no overload protection mechanism, because ceramics are brittle materials, the pressure sensing membrane can explode under extreme overpressure conditions to cause medium leakage, and although the failure rate of the failure mode is very low, the severity level is very high, and the pressure sensing membrane cannot be used in some occasions with high reliability requirements. The application numbers are: 201810225706.6 discloses a ceramic MEMS pressure sensor, which adopts a sealing structure with ceramic as a framework, solves the problems of small output signal, poor stability, low precision and the like, and has the advantages of high measurement precision, good stability and the like.
The stainless steel pressure sensor adopts a stainless steel elastic base body which is formed by machining and provided with an elastic diaphragm as a base, a strain structure is manufactured on the base, and pressure measurement is realized by measuring the strain of the stainless steel elastic diaphragm. Because metal structure is based on machining process, can adopt welding process equipment, do not have gluing, ageing, reveal scheduling problem, the reliability is high, can be applied to the field that operating mode environment is abominable, the range is great. The patent application with the application number of 201810609758.3 discloses a pressure sensor based on a preparation process of a stainless steel-based constantan foil plate, which has the advantages of very low deformability, high thermal conductivity and insulation strength, very high bonding strength between a smooth surface of the constantan foil and the stainless steel substrate 10, very high heat stress resistance and the like.
The MEMS pressure sensor is a high-precision pressure sensor based on a MEMS pressure chip. At present, the MEMS chips mainly used include a silicon cup type MEMS pressure chip and a Cavity-SOI type pressure chip, the silicon cup type MEMS pressure chip performs back Cavity etching on a silicon substrate by a wet etching process to obtain an elastic membrane, a piezoresistor is manufactured on the front surface of the elastic membrane by a diffusion process, and the silicon substrate is bonded on a substrate by a silicon-glass anodic bonding or a silicon-silicon bonding process, thereby forming an absolute pressure or relative pressure chip. The silicon-glass type MEMS pressure chip adopts a glass substrate, and has wide application in high-precision fields such as industry and the like due to good thermal matching of glass and stainless steel and the like. The Cavity-SOI pressure chip is directly manufactured on a Cavity-SOI substrate by piezoresistive manufacturing, and because a SiO2 insulating layer is arranged between the piezoresistive and the silicon substrate, the piezoresistive manufacturing method has small piezoresistive leakage current at high temperature, better high-temperature stability and higher cost. Since the MEMS pressure chip itself is very fragile and cannot directly measure pressure, it is necessary to package and indirectly measure the pressure of the medium to ensure reliability.
With the continuous rise of the combustion temperature of the aerospace power device, higher temperature measurement is carried out under the conditions of high-speed high-temperature airflow and narrow space, and people pay more attention to the temperature measurement. In the researches such as high-temperature part tests of aeroengine turbines, combustion chambers and the like and surface thermodynamic analysis of hypersonic vehicles and the like, accurate measurement of the surface temperature of high-temperature parts is necessary, and a film temperature measurement technology suitable for the complex measurement condition is continuously developed. The novel sensor developed along with the maturity of the thin film technology has the characteristics of small volume, short thermal dynamic response time, high sensitivity, convenience for integration and the like. It can replace traditional temperature sensor, more is applicable to the temperature measurement of the quick and little clearance place on object surface.
With the discovery of new technology, the development of the sensor is rapid due to the cross fusion of multiple disciplines. The development of sensors is moving toward miniaturization, high stability and high precision. In order to solve the complicated measurement, the multifunctional sensor is produced.
The graphene has excellent electrical, thermal, mechanical and chemical properties, can stably exist in a high-temperature oxygen-free environment of 3000 ℃, and is a good nano sensor material. Compared with the traditional pressure and temperature sensor, the high-temperature graphene pressure/temperature integrated sensor can be used for measuring pressure and temperature in high-temperature severe environment.
The graphene material is used for replacing metal materials and other semiconductor materials, and temperature measurement under severe high-temperature environment is achieved.
Disclosure of Invention
In order to effectively solve the defects of the background technology, a high-temperature graphene pressure/temperature integrated sensor is designed by using a graphene material to replace a metal material and other semiconductor materials. The graphene force-sensitive element and the temperature-sensitive element are arranged in the same temperature area, when the temperature acts on a graphene material, the graphene is influenced by phonon coupling, the resistivity is changed along with the graphene, the resistance is also changed, and then the change of the conductivity of the graphene film 2 is detected through an external detection circuit to realize the measurement of the temperature. Under the action of pressure, the temperature-sensitive element adopts a chamber-free structure to reduce the influence of external pressure and obtain a single temperature parameter. When the force-sensitive element is influenced by the external temperature, because of the existence of the microcavity structure, the influence of thermal stress on the graphene is large, the influence resistance of the graphene under the thermal stress is increased, the increasing trend is larger than the trend that the influence of the graphene electro-phonon coupling is reduced, the measured temperature parameter is utilized to decouple the output of the force-sensitive element, and a single pressure output parameter is obtained.
A high-temperature graphene pressure/temperature integrated sensor can normally work under the environment with the temperature of 1200 ℃ and the pressure of 3MPa, and comprises:
a package housing;
the ceramic end cover is arranged at the top of the packaging shell, and a plurality of through holes are formed in the ceramic end cover to form a porous structure;
the substrate is arranged at the bottom of the inner side of the packaging shell;
the detection assembly is arranged on the substrate and used for detecting pressure and temperature.
Optionally, the detection assembly comprises: the device comprises a first substrate, a second substrate, a metal bonding layer, a force-sensitive nano film, a temperature-sensitive nano film, an alumina film and an internal interconnection electrode;
the first substrate and the second substrate are respectively arranged on the base plate through metal bonding layers, a gap is formed between the first substrate and the second substrate, the force-sensitive nano film is arranged above the gap, one end of the force-sensitive nano film is arranged on the first substrate, the other end of the force-sensitive nano film is arranged on the second substrate, the temperature-sensitive nano film is arranged on the second substrate, and internal interconnection electrodes are respectively arranged on two sides of the force-sensitive nano film and the temperature-sensitive nano film and used for leading out electrical responses of the force-sensitive nano film and the temperature-sensitive nano film.
Optionally, the aluminum oxide films cover the force-sensitive nano-film and the temperature-sensitive nano-film, respectively, and the aluminum oxide films also cover the outer surfaces of the first substrate and the second substrate, respectively.
Optionally, the force-sensitive nano film and the temperature-sensitive nano film are composed of an upper layer boron nitride film, a graphene film and a lower layer boron nitride film, the upper layer boron nitride film, the graphene film and the lower layer boron nitride film are sequentially arranged from top to bottom, the internal interconnection electrodes are respectively arranged at the end parts of the graphene film, and the end parts of the graphene film are attached to the lower surfaces of the internal interconnection electrodes.
Optionally, the end portions of the force-sensitive nano-film and the temperature-sensitive nano-film are further provided with a barrier layer, and the barrier layer isolates the coating of the internal interconnection electrode from the first substrate and the second substrate.
Optionally, the high-temperature graphene pressure/temperature integrated sensor further comprises an interconnect assembly, the interconnect assembly comprising: interconnection leads, interconnection pads, interconnection bumps, lead posts, and external interconnection electrodes;
the lead post penetrates through the bottom of the package shell, the interconnection pad is arranged at one end, located inside the package shell, of the lead post, the external interconnection electrode is arranged at one end, located outside the package shell, of the lead post, the interconnection bump is arranged on the interconnection pad, and the internal interconnection electrode is connected with the interconnection bump on the interconnection pad through the interconnection lead.
Compared with the prior art, the temperature measurement device has obvious advancement, the device utilizes the nano film containing the graphene to replace other metal materials or semiconductor materials on the basis of the original temperature and pressure sensor, the temperature measurement interval of the temperature sensor is greatly increased, and the response speed of the device is effectively increased due to the high thermal conductivity of the graphene material. Temperature versus pressure in-situ compensation results in a higher accuracy of the pressure signal. Simultaneously, the force-sensitive nano-film and the temperature-sensitive nano-film are wrapped by aluminum oxide and a substrate, so that interference factors in the surrounding environment are effectively eliminated, and the aluminum oxide isolates the graphene film from being in direct contact with the outside, so that the high-temperature resistance and stability of the device are improved. The testing device can work at a high temperature of 1200 ℃ and under a pressure of 3MPa, realizes the testing of temperature and pressure, is acid-base resistant and corrosion resistant, and has high application value.
Drawings
FIG. 1 is an external structural view of an embodiment of the present invention;
FIG. 2 is a cross-sectional view of the overall structure of an embodiment of the present invention;
FIG. 3 is a schematic diagram of the overall structure of the detecting assembly according to the embodiment of the present invention;
FIG. 4 is a top view of the detecting assembly according to the embodiment of the present invention;
FIG. 5 is a schematic structural view of the force-sensitive nano-film and the temperature-sensitive nano-film according to the embodiment of the present invention;
FIG. 6 is a top view of the force-sensitive nano-film and temperature-sensitive nano-film structure according to the embodiment of the present invention;
FIG. 7 is a cross-sectional view of the force-sensitive nano-film and temperature-sensitive nano-film structure according to the embodiment of the present invention;
as shown in the figures, the list of reference numbers is as follows:
1-upper boron nitride film; 2-a graphene film; 3-lower boron nitride film; 4. 18-interconnect leads; 5. 7, 15, 17, 32-alumina thin films; 6-a first substrate; 8. 14-a metal bonding layer; 9. 12-an external interconnection electrode; 10-a substrate; 11-force sensitive nanofilm; 13-a housing; 16-a second substrate; 19. 21, 22, 23-internal interconnection electrodes; 20-temperature sensitive nano-film; 24. 25-an interconnect bump; 26. 27-a lead post; 28. 29-interconnect pads; 30-a ceramic end cap; 31-a through hole; 33-barrier layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, are not to be construed as limiting the present invention. In addition, in the description process of the embodiment of the present invention, the positional relationships of the devices such as "upper", "lower", "front", "rear", "left", "right", and the like in all the drawings are based on fig. 1.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention is further described below with reference to the accompanying drawings:
as shown in fig. 1 and 2, an appearance perspective view of the embodiment of the present application provides a high-temperature graphene pressure/temperature integrated sensor, which can normally operate at 1200 ℃ and under a pressure of 3MPa, and the sensor includes:
the packaging shell 13 may be a cylinder, a cube, a cuboid, and the like as a whole, and is not particularly limited, in the drawings of the present invention, only a cylinder structure is shown;
the ceramic end cover 30 is arranged at the top of the packaging shell 13, the ceramic end cover 30 is provided with a plurality of through holes 31 to form a porous structure, the structural shape of the through holes 31 is not limited to the circular shape shown in the invention, and the through holes 31 can also be square or other shapes without specific limitation, and the porous structure is beneficial to quickly transmitting temperature and pressure to the inside, thereby improving the response time;
the substrate 10 is arranged at the bottom of the inner side of the packaging shell 13, and the outer periphery of the substrate 10 is mutually overlapped with the inner side surface of the packaging shell 13;
a sensing assembly disposed on the substrate 10 for sensing pressure and temperature;
the ceramic end cover 30, the substrate 10 and the package housing 13 together define an internal detection space, and the ceramic end cover 30, the substrate 10 and the package housing 13 together provide stable support for internal detection components.
As shown in fig. 2-6, the detection assembly includes: a first substrate 6, a second substrate 16, metal bonding layers 8, 14, a force sensitive nano-film 11, a temperature sensitive nano-film 20, aluminum oxide films 5, 7, 15, 17, 32, and internal interconnection electrodes 19, 21, 22, 23.
As shown in fig. 2 to 4, the first substrate 6 and the second substrate 16 are respectively disposed on the substrate 10 through metal bonding layers 8 and 14, a gap is formed between the first substrate 6 and the second substrate 16, the force-sensitive nano-film 11 is disposed above the gap, one end of the force-sensitive nano-film 11 is disposed on the first substrate 6, the other end of the force-sensitive nano-film 11 is disposed on the second substrate 16, the temperature-sensitive nano-film 20 is disposed on the second substrate 16, the aluminum oxide films 5, 7, 15, 17, and 32 respectively cover the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20, the aluminum oxide films 5, 7, 15, 17, and 32 respectively cover the outer surfaces of the first substrate 6 and the second substrate 16, internal interconnection electrodes 19, 21, 22, and 23 are respectively disposed on two sides of the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20, for deriving the electrical response of the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20. The first substrate 6 and the second substrate 16 may be silicon carbide substrates.
As shown in fig. 2 to 4, the aluminum oxide films 5, 7, 15, 17, 32 covered on the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20 and the aluminum oxide films 5, 7, 15, 17, 32 on the surfaces of the first substrate 6 and the second substrate 16 isolate the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20 from direct contact with the outside, thereby providing oxygen-free protection.
As shown in fig. 5 to 7, the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20 are both composed of an upper layer boron nitride film 1, a graphene film 2 and a lower layer boron nitride film 3, the upper layer boron nitride film 1, the graphene film 2 and the lower layer boron nitride film 3 are sequentially arranged from top to bottom, internal interconnection electrodes 19, 21, 22 and 23 are respectively arranged at the end portions of the graphene film 2, and the end portions of the graphene film 2 are attached to the lower surfaces of the internal interconnection electrodes 19, 21, 22 and 23 so as to be communicated with the internal interconnection electrodes 19, 21, 22 and 23, so as to derive electrical responses in the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20.
As shown in fig. 7, the end portions of the force-sensitive nano-film 11 and the temperature-sensitive nano-film 20 are further provided with a barrier layer 33, the barrier layer 33 separates the inner interconnection electrodes 19, 21, 22, 23 from the first substrate 6 and the second substrate 16, and the barrier layer 33 serves as a wetting layer and a protective layer to prevent mutual diffusion of metal atoms and substrate atoms at high temperature. In other embodiments, the number of layers of the upper boron nitride film 1 and the lower boron nitride film 3 is greater than or equal to 1, and the graphene film 2 is of a single-layer structure.
The force-sensitive nano film 11 is used as a force-sensitive detection part for sensing pressure change, the temperature-sensitive nano film 20 is used as a temperature-sensitive detection part for sensing temperature change, the force-sensitive nano film 11 senses corresponding pressure signals, and the temperature-sensitive nano film 20 senses corresponding temperature signals and can perform in-situ temperature compensation on the force-sensitive part, so that the compensated pressure is more suitable for the range of transient temperature change.
Because the force-sensitive nano film 11 is arranged in the gap between the first substrate 6 and the second substrate 16, a microcavity structure exists, the influence of thermal stress on the graphene film 2 is large, and the force-sensitive nano film 11 can be subjected to in-situ temperature compensation by using the temperature-sensitive nano film 20. The sensor does not have the problems of temperature measurement error and temperature measurement asynchronism caused by the difference between the position of the temperature-sensitive nano film 20 and the position of the force-sensitive nano film 11, and the compensated pressure output is more suitable for the occasion of transient temperature and pressure change.
As shown in fig. 2-6, the integrated high-temperature graphene pressure/temperature sensor further includes an interconnect assembly, the interconnect assembly including: interconnection leads 4, 18, interconnection pads 28, 29, interconnection bumps 24, 25, lead posts 26, 27, and external interconnection electrodes 9, 12. The lead posts 26, 27 penetrate the bottom of the package housing 13, the interconnection pads 28, 29 are disposed at one ends of the lead posts 26, 27 located inside the package housing 13, the external interconnection electrodes 9, 12 are disposed at one ends of the lead posts 26, 27 located outside the package housing 13, the interconnection bumps 24, 25 are disposed on the interconnection pads 28, 29, and the internal interconnection electrodes 19, 21, 22, 23 are connected to the interconnection bumps 24, 25 on the interconnection pads 28, 29 through the interconnection leads 4, 18. The temperature-sensitive nano-film 20 and the force-sensitive nano-film 11 can be connected with an external detection component through the interconnection leads 4 and 18, the interconnection pads 28 and 29, the interconnection bumps 24 and 25, the lead posts 26 and 27 and the external interconnection electrodes 9 and 12, and are used for transmitting the electrical response of the temperature-sensitive nano-film 20 and the force-sensitive nano-film 11 to external pressure and temperature signals. The external detection component is just an existing component which forms a complete reading detection sensor.
The metal bonding layers 8 and 14 are composed of an upper chromium layer and a lower chromium layer and a platinum bonding layer sandwiched therebetween, can resist high temperature, are bonded with the base plate 10, the first substrate 6 and the second substrate 16, and are favorable for forming a sealed vacuum cavity environment.
The materials of the first substrate 6 and the second substrate 16 can also be selected from α -Al2O3The first substrate 6 and the second substrate 16 are made of α -Al2O3The normal use temperature can reach 2030 ℃, so the temperature-sensitive nano film 20 and the force-sensitive nano film 11 packaged in the oxygen-free environment can stably work in a severe environment of more than 1200 ℃, and the substrate 10 adopts Al2O3The material, the inner and outer interconnection electrodes 9, 12, may be selected from Pt material.
The principle of the invention is as follows:
when external pressure and temperature signals act on the upper surface of the ceramic end cover of the sensor, the external pressure and temperature signals are transmitted to the detection assembly through the upper ceramic end cover, the influence of the pressure on the temperature-sensitive element adopting a cavity-free structure is negligible, the temperature-sensitive element is mainly influenced by the temperature, and the electro-phonon coupling intensity and the phonon scattering intensity in the material are changed, so that the conductivity of the graphene film is changed. The externally applied temperature value can be measured by detecting the current change in the graphene surface. The force-sensitive element is mainly influenced by pressure and can detect a pressure signal, but because of the existence of a microcavity structure, the influence of thermal stress on graphene is large, the resistance of the graphene influenced by the thermal stress is increased, the increasing trend is larger than the trend that the influence of graphene electron-electron coupling is reduced, the measured temperature parameter can be utilized to decouple the output of the force-sensitive element, and therefore a single pressure output parameter is obtained. Meanwhile, in the process, the aluminum oxide and the substrate are isolated from direct contact of the force-sensitive nano film and the temperature-sensitive nano film with the outside, oxygen-free protection is provided for graphene, and the force-sensitive nano film and the temperature-sensitive nano film can work badly in the environment, so that high-precision measurement in a complex environment is realized.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (6)
1. The utility model provides a high temperature graphite alkene pressure/temperature integration sensor, can normally work under the environment of temperature 1200 ℃, pressure 3MPa, its characterized in that, the sensor includes:
an enclosure (13);
the ceramic end cover (30) is arranged at the top of the packaging shell (13), and a plurality of through holes (31) are formed in the ceramic end cover (30) to form a porous structure;
a substrate (10), wherein the substrate (10) is arranged at the bottom of the inner side of the packaging shell (13);
a detection assembly disposed on the substrate (10) for detecting pressure and temperature.
2. The integrated high-temperature graphene pressure/temperature sensor according to claim 1, wherein the detection assembly comprises: a first substrate (6), a second substrate (16), a metal bonding layer (8, 14), a force-sensitive nanomembrane (11), a temperature-sensitive nanomembrane (20), an aluminum oxide film (5, 7, 15, 17, 32) and internal interconnection electrodes (19, 21, 22, 23);
the first substrate (6) and the second substrate (16) are respectively arranged on the substrate (10) through metal bonding layers (8, 14), a gap is formed between the first substrate (6) and the second substrate (16), the force-sensitive nano film (11) is arranged above the gap, one end of the force-sensitive nano film (11) is arranged on the first substrate (6), the other end of the force-sensitive nano film (11) is arranged on the second substrate (16), the temperature-sensitive nano film (20) is arranged on the second substrate (16), and internal interconnection electrodes (19, 21, 22, 23) are respectively arranged on two sides of the force-sensitive nano film (11) and the temperature-sensitive nano film (20) and used for deriving the electrical response of the force-sensitive nano film (11) and the temperature-sensitive nano film (20).
3. A high-temperature graphene pressure/temperature integrated sensor according to claim 2, wherein the alumina films (5, 7, 15, 17, 32) are respectively covered on the force-sensitive nano-film (11) and the temperature-sensitive nano-film (20), and the alumina films (5, 7, 15, 17, 32) are respectively covered on the outer surfaces of the first substrate (6) and the second substrate (16).
4. The integrated pressure/temperature sensor of high-temperature graphene according to claim 2, wherein the force-sensitive nano-film (11) and the temperature-sensitive nano-film (20) are composed of an upper boron nitride film (1), a graphene film (2) and a lower boron nitride film (3), the upper boron nitride film (1), the graphene film (2) and the lower boron nitride film (3) are sequentially arranged from top to bottom, internal interconnection electrodes (19, 21, 22, 23) are respectively arranged at the end parts of the graphene film (2), and the end parts of the graphene film (2) are attached to the lower surfaces of the internal interconnection electrodes (19, 21, 22, 23).
5. A high-temperature graphene pressure/temperature integrated sensor according to claim 2, wherein the end portions of the force-sensitive nano-film (11) and the temperature-sensitive nano-film (20) are further provided with a barrier layer (33), and the barrier layer (33) isolates the coating of the internal interconnection electrodes (19, 21, 22, 23) from the first substrate (6) and the second substrate (16).
6. A high temperature graphene pressure/temperature integrated sensor according to claim 2, further comprising an interconnect assembly, the interconnect assembly comprising: interconnection leads (4, 18), interconnection pads (28, 29), interconnection bumps (24, 25), lead posts (26, 27), and external interconnection electrodes (9, 12);
the lead posts (26, 27) penetrate through the bottom of the package shell (13), the interconnection pads (28, 29) are arranged at one ends of the lead posts (26, 27) located inside the package shell (13), the external interconnection electrodes (9, 12) are arranged at one ends of the lead posts (26, 27) located outside the package shell (13), the interconnection bumps (24, 25) are arranged on the interconnection pads (28, 29), and the internal interconnection electrodes (19, 21, 22, 23) are connected with the interconnection bumps (24, 25) on the interconnection pads (28, 29) through the interconnection leads (4, 18).
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112857435A (en) * | 2020-12-31 | 2021-05-28 | 中北大学 | Flexible graphene pressure and temperature composite sensor |
| CN114544063A (en) * | 2022-02-22 | 2022-05-27 | 中北大学 | Graphene-based irradiation-resistant pressure sensor |
| CN115655502A (en) * | 2022-12-29 | 2023-01-31 | 中北大学 | Temperature sensor based on piezoresistive characteristic of suspended graphene film |
| CN116222838A (en) * | 2023-05-09 | 2023-06-06 | 苏州亿波达光电子科技有限公司 | Sensing element and pressure sensor |
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2020
- 2020-04-08 CN CN202010277704.9A patent/CN111337083A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112857435A (en) * | 2020-12-31 | 2021-05-28 | 中北大学 | Flexible graphene pressure and temperature composite sensor |
| CN114544063A (en) * | 2022-02-22 | 2022-05-27 | 中北大学 | Graphene-based irradiation-resistant pressure sensor |
| CN114544063B (en) * | 2022-02-22 | 2023-06-20 | 中北大学 | Graphene-based irradiation-resistant pressure sensor |
| CN115655502A (en) * | 2022-12-29 | 2023-01-31 | 中北大学 | Temperature sensor based on piezoresistive characteristic of suspended graphene film |
| CN116222838A (en) * | 2023-05-09 | 2023-06-06 | 苏州亿波达光电子科技有限公司 | Sensing element and pressure sensor |
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