CN110207839A - A kind of graphene high temperature sensor - Google Patents
A kind of graphene high temperature sensor Download PDFInfo
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- CN110207839A CN110207839A CN201910386553.8A CN201910386553A CN110207839A CN 110207839 A CN110207839 A CN 110207839A CN 201910386553 A CN201910386553 A CN 201910386553A CN 110207839 A CN110207839 A CN 110207839A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 75
- 229910052582 BN Inorganic materials 0.000 claims abstract description 73
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000000919 ceramic Substances 0.000 claims abstract description 29
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- 239000010410 layer Substances 0.000 claims description 61
- 230000004888 barrier function Effects 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 27
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
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- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
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- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- General Physics & Mathematics (AREA)
- Thermistors And Varistors (AREA)
Abstract
The present invention relates to high temperature test technical fields, and in particular to a kind of graphene high temperature sensor.A kind of graphene high temperature sensor, primary structure include: nanometer film, interconnection electrode, substrate, sealing ring, package casing, ceramic substrate, stem.Nanometer film is made of upper layer and lower layer boron nitride with graphene therein is clipped in, it is arranged in the lower surface of substrate, upper surface of substrate etches porous structure to accelerate heat transfer, and interconnection electrode is made of interconnected salient points bonding interconnect pad, will test unit by stem and be communicated with the outside.So that substrate and ceramic substrate is formed vacuum chamber using Pt-Pt metal bonding technology, has completely cut off nanometer film and directly contacted with extraneous, provide anaerobic protection for nanometer film.Boron nitride/graphene/boron nitride nanometer film is both the functional material and its structural material of device.Device can high temperature with long-term stable operation at 1700 DEG C, and it is acid and alkali-resistance, anticorrosive, be suitable for various high temperature test environments.
Description
Technical field
The present invention relates to high temperature test technical fields, and in particular to a kind of graphene high temperature sensor.
Background technique
It improves with the development of science and technology, it is cumulative for the monitoring of temperature parameter and measuring technique demand day in various fields
Greatly, the acquisition of the temperature parameter especially under long-time high-temperature severe environment is still to need perfect science and technology.Such as in vapour
The main component of the equipment such as car engine, aero-engine, heavy duty gas turbine is just in complicated high-temperature severe environment, this is just
It needs to monitor in real time using temperature parameter of the sensor to key position as combustion chamber, Lai Tigao combustibility and comment
Estimate the health status of component.
In recent years, the unit of lot of domestic and foreign and scholar have carried out a large amount of research to high temperature sensor and product is opened
Hair.The application status of integrated temperature measurement, can be divided into contact and contactless two major classes according to measurement method, wherein contacting
Formula mainly has thermocouple temperature sensor, resistance temperature detector；Non-contact temperature sensor mainly has infrared temperature
Sensor and radiation temperature transducer.The essence of graphene temperature sensor described in this patent is Resistance Temperature sensing in fact
Device, resistance temperature detector can be divided into metallic resistance formula temperature sensor and semiconductor resistance-type temperature sensor again.Gold
Belonging to resistance temperature detector mainly has the alloys such as the pure metal such as platinum, gold, copper, nickel material and phosphor bronze using material；Partly lead
Temperature formula sensor material is then mainly using carbon, germanium, ceramics etc..
For now, resistance temperature detector is still more accurate temperature sensor, and current uses warm area one
As be 1K~1000K or so, difference can be as low as a ten thousandth degree Celsius, and its precision is high, and performance is also stable, but lack
Point is that thermal inertia is larger, and the response time is longer.Due to the limitation of metal material itself, so the Resistance Temperature of metal material
The universal thermometric section of sensor is lower, can not complete the measurement under severe hot environment, therefore studies a kind of novel semi-conductor
The resistance temperature detector of material improves temperature range and response time while guaranteeing that its precision is the section being badly in need of at present
Technology.
With the progress and development of science, grapheme material is announced to the world splendidly, it with its outstanding electricity, calorifics, mechanics and
Chemical property becomes the good material for manufacturing various nano-sensors now.Experiment test shows that graphene can be stable in the presence of
In 3000 DEG C of anaerobic hot environment, boron nitride nanometer film can work in 2800 DEG C of oxygen-free environment, both have good
High-temperature stability.Boron nitride has lattice structure similar with graphene, graphene is clipped in two layers of boron nitride, Ke Yiwei
Graphene provides anoxybiotic, the protection for completely cutting off impurity and smooth dielectric layer；This outer-lining bottom selects α-Al2O3, normal use temperature
Up to 2030 DEG C, therefore the nano thin-film carried out after oxygen-free environment encapsulation can be with steady operation in 1000 DEG C or more of severe ring
Border.Grapheme material also holds up to the thermal conductivity of 5300W/ (mK) simultaneously, thus it for temperature response time very
It is short.
Metal material and other semiconductor materials are replaced using grapheme material, realizes the temperature under severe hot environment
Measurement, is presently the most the science and technology in forward position, is the technical field that world technology circle is explored.
Summary of the invention
In order to effectively solve the problems, such as the deficiency of above-mentioned background technique, metal material and other half are replaced using grapheme material
Conductor material devises a kind of high temperature sensor based on graphene.Graphene film is affected by temperature electrology characteristic hair
The conductivity that raw change, specifically temperature change graphene film, then detects graphene film by outer detecting circuit
The variation of conductivity is to realize the measurement to temperature.
The specific summary of the invention of the high temperature sensor includes: a kind of graphene high temperature sensor, the temperature
Steady operation at a high temperature of sensor is in 1700 DEG C~2000 DEG C is spent, the sensor specifically includes:
At least one package casing, package casing inside upper and lower ends are respectively arranged with a ceramic substrate and one
A substrate, the ceramic substrate, the substrate and the package casing define a detection space jointly；
At least one detection unit, the detection unit are arranged in the detection space, and the detection unit includes extremely
A few boron nitride/graphene/boron nitride nanometer film and at least two metal electrodes, the substrate is towards the ceramic base
Boron nitride/graphene/boron nitride nanometer the film is arranged in the one side of plate, and the metal electrode is arranged in the boron nitride/stone
On black alkene/boron nitride nanometer film, and the boron nitride/graphene/boron nitride nanometer film sense is conducted heat to by substrate
By exterior temperature change.
Further, the detection space can be empty by boron nitride/graphene/boron nitride nanometer film and outside for one
Air bound from anaerobic vacuum chamber.
Further, the substrate etches the porous structure there are many keyhole formation in contrast to the one side of ceramic substrate,
Boron nitride/graphene/boron nitride nanometer the film, and the nitridation are arranged in contrast to the one side of porous structure in the substrate
Boron/graphene/boron nitride nanometer film area is less than the area of the entire substrate.
Further, the ceramic base is supported on by sealing ring in contrast to the one side side of porous structure in the substrate
Plate upper side, the ceramic substrate, substrate and sealing ring constitute the anaerobic vacuum, can be filled in the anaerobic vacuum chamber lazy
Property, the lesser gas of thermal expansion coefficient.
Further, the package casing is connected and is firmly bonded with ceramic substrate.
Further, the boron nitride/graphene/boron nitride nanometer film includes upper layer boron nitride layer, lower layer's boron nitride
Layer and it is clipped in single-layer graphene therein.
Further, the metal electrode includes the first metal electrode and the second gold medal for being separately connected the nanometer film both ends
Belong to electrode, it is external that first metal electrode passes sequentially through the first interconnected salient points, the first interconnect pad and the connection of first lead column
Detection components；It is outer that second metal electrode passes sequentially through the second interconnected salient points, the second interconnect pad and the connection of the second stem
Portion's detection components.
Further, the corresponding setting between first metal electrode, the second metal electrode, sealing ring and substrate
There is barrier layer.
Further, lower layer's boron nitride and graphene layer are covered in first metal electrode, the second metal electrode
One side, upper layer graphene both ends contact setting with the barrier layer.
There is apparent advance compared with the background technology, the present invention, device is on original resistance temperature detector basis
On, other metal materials or semiconductor material are substituted using the nanometer film comprising graphene, greatly improve resistance-type temperature
The thermometric section of sensor is spent, and by the high heat conductance of grapheme material, effectively raises the response speed of device.Together
When, graphene is clipped in the middle by boron nitride nanometer film, effectively eliminate the disturbing factor in ambient enviroment, and oxygen-free packaging
The heat-resisting ability and stability of device are then improved, can be applied to and its severe high temperature test environment, is very ideal
High temperature sensor.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram of the embodiment of the present invention；
Fig. 2 is the overall structure sectional view of the embodiment of the present invention；
Fig. 3 is the chip overall structure figure of the embodiment of the present invention；
Fig. 4 is the chip structure bottom view of the embodiment of the present invention；
Fig. 5 is the temperature sensitive structure chart of graphene of the embodiment of the present invention；
Fig. 6 is the temperature sensitive structure top view of graphene of the embodiment of the present invention；
Fig. 7 is the temperature sensitive structural section figure of graphene of the embodiment of the present invention；
As shown in the figure, list of numerals is as follows:
1, boron nitride/graphene/boron nitride nanometer film；2, the first interconnected salient points；3, the second interconnected salient points；4, first is close
Seal ring；5, the second sealing ring；6, substrate；7, interconnect pad；8, package casing；9, ceramic substrate；10, first lead column；11,
Two stems；12, the first barrier layer；13, the second barrier layer；14, third barrier layer；15, the 4th barrier layer；16, upper layer nitrogenizes
Boron layer；17, lower layer's boron nitride layer；18, graphene layer；19, anaerobic vacuum chamber；20, interconnect pad；21, the first metal electrode；
22, the second metal electrode；23, the first outside interconnection electrode；24, the second outside interconnection electrode.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", "upper", "lower", "front", "rear", " left side ",
The orientation or positional relationship of instructions such as " right sides " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing this hair
Bright and simplified description, rather than the combination of indication or suggestion meaning or element must have a particular orientation, with specific orientation
Construction and operation, therefore be not considered as limiting the invention.In addition, during the description of the embodiment of the present invention, Suo Youtu
In the device positions relationship such as "upper", "lower", "front", "rear", "left", "right", using Fig. 1 as standard.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " connected " " connects
Connect " it shall be understood in a broad sense, for example, it may be being fixedly connected, it may be a detachable connection, or be integrally connected；It can be machine
Tool connection, is also possible to be electrically connected；It can be directly connected, two members can also be can be indirectly connected through an intermediary
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in the present invention with concrete condition
Concrete meaning.
The present invention will be further described below with reference to the accompanying drawings:
As shown in Figure 1, being the stereoscopic figure of first embodiment of the invention, a kind of high-temperature temperature based on graphene is provided
Sensor, the sensor include at least one package casing 8 and at least one detection unit, and the package casing 8 is whole can
Think the shapes such as cylindrical body, cube, cuboid, and be not specifically limited, in attached drawing of the present invention, illustrates only cylindrical body knot
Structure, 8 top of package casing are reticular structure, and set sensor chip in its lower end, and ceramic substrate 9 and substrate 6 are total
With an internal detection space is defined, the detection unit setting is in the internal detection space.
It as shown in Figure 2,3, is the overall structure sectional view and chip cross-section figure of first embodiment of the invention, in the inside
The bottom in detection space is provided with a ceramic substrate 9,9 peripheral side of ceramic substrate and the 8 medial surface phase of package casing
Mutual connection is set.
The detection unit is placed in the internal detection space, and is specifically located at the ceramic substrate 9 towards inside
The side in space is detected, the detection unit includes boron nitride/graphene/boron nitride nanometer film 1, metal electrode, the nitrogen
Change boron/graphene/boron nitride nanometer film 1 in the present invention it is also understood that being nanometer film；
In the present embodiment, the temperature sensor includes: nanometer film, interconnection electrode, substrate 6, sealing ring, package casing
8, ceramic substrate 9, stem.Substrate 6 is arranged by sealing ring in 9 upper surface of ceramic substrate, 6 lower surface of substrate is equipped with nanometer
Film provides anaerobic vacuum environment by oxygen-free packaging technique for nanometer film, the nanometer film includes boron nitride/graphene/nitridation
Boron nano thin-film.Metal electrode is connected by wiring with interconnection electrode, and interconnection electrode passes through ceramic substrate by stem and will examine
It surveys unit to be connected with outer detecting circuit, for transmitting boron nitride/graphene/boron nitride nanometer film for the electricity of temperature signal
Learn response.Interconnection electrode is made of the bonding of interconnected salient points interconnect pad, and package casing 8 is connected with ceramic substrate 9 and be bonded secured.
The substrate 6 is square, and boron nitride/graphene/boron nitride nanometer film of 6 upper surface of substrate arrangement is by upper and lower
Two layers of boron nitride and intermediate graphene are constituted, and 6 upper surface of substrate is etched out many keyhole formation porous structures.
The ceramic substrate 9 is connected by sealing ring with substrate 6, by oxygen-free packaging technique, provides nothing for nanometer film
Oxygen vacuum environment, the lesser gas adjustment vacuum degree of intracavitary fillable inertia, thermal expansion coefficient meet different test environment.
6 material of substrate selects α-Al2O3Material, substrate use Al2O3Material, the sealing ring, metal electrode and
External interconnection electrode selects Pt material.
The metal electrode is arranged in nanometer film two sides, for exporting boron nitride/graphene/boron nitride nanometer film electricity
Response is learned, stem reconnects outer detecting circuit after connecting external interconnection electrode, is respectively used for transmitting and detects boron nitride/stone
Black alkene/boron nitride nanometer film is made of the electrical response of temperature signal, interconnection electrode interconnected salient points bonding interconnect pad.Resistance
Barrier connects metal electrode, sealing ring and substrate as soakage layer and protective layer, prevents metallic atom and substrate atoms under high temperature
Phase counterdiffusion.Package casing is to completely cut off external environment, support, protection internal chip structure.
In the present embodiment, the interconnected salient points are defined as the first interconnected salient points 2, the second interconnected salient points 3, the sealing ring
It is defined as the first sealing ring 4, the second sealing ring 5, the stem is defined as first lead column 10, the second stem 11, described
Barrier layer is defined as the first barrier layer 12, the second barrier layer 13, third barrier layer 14, the 4th barrier layer 15, the metal electrode
Be defined as the first metal electrode 21, the second metal electrode 22, the external interconnection electrode be defined as the first outside interconnection electrode 23,
Second outside interconnection electrode 24, above-mentioned components are only position difference, and structure is identical, realizes that technical effect is zero identical
Part only enumerates differentiation with the first, second equal digital forms；
Specifically, the interconnection electrode is bonded the first interconnect pad by the first interconnected salient points 2, the second interconnected salient points 3 respectively
7, the second interconnect pad 20 is constituted, and there are many apertures for 6 upper side of substrate etching to form porous structure, under the substrate 6
Side arrangement has the boron nitride/graphene/boron nitride nanometer film 1, and the substrate 6 and the boron nitride/graphene/nitrogen
Change the downside area that the opposite area of boron nano thin-film 1 is less than the entire substrate 6；
Pass through the first sealing ring 4, the second sealing ring 5 and the ceramic base respectively in the downside peripheral side of the substrate 6
Plate 9 connects, and the ceramic substrate 9, substrate 6 and the first sealing ring 4, the second sealing ring 5 constitute an anaerobic vacuum chamber 19, to receive
Rice film provides anaerobic protection, has completely cut off it and has directly contacted with extraneous, intracavitary fillable inertia, the lesser gas of thermal expansion coefficient
Body adjustment vacuum degree meets different test environment.
As shown in figure 4, being the chip bottom view of first embodiment of the invention, first metal electrode 21, the second metal
Electrode 22 is separately connected the boron nitride/three layers of nano thin-film 1 of graphene/boron nitride both ends, for exporting boron nitride/graphite
Electrical response in three layers of nano thin-film 1 of alkene/boron nitride；
Specifically: first metal electrode 21, the second metal electrode 22 are separately connected the first interconnected salient points by wiring
2, the second interconnected salient points 3, first interconnected salient points 2, the second interconnected salient points 3 are bonded the interconnection of the first interconnect pad 7, second respectively
Pad 20, first interconnect pad 7 and the second interconnect pad 20 pass through first lead column 10, the second stem 11 and institute respectively
State the first connected outside interconnection electrode 23 of stem, the second outside interconnection electrode 24 is connected, the first outside interconnection electrode 23, the
Two outside interconnection electrodes 24 connect external detection component, and the external detection component is to constitute complete sensor knot in the prior art
The component of structure.
As shown in Figure 5,6, in first metal electrode 21, the second metal electrode 22, the sealing of the first sealing ring 4, second
It is corresponding between ring 5 and substrate 6 to be provided with the first barrier layer 12, the second barrier layer 13, third barrier layer 14, the 4th barrier layer
15, prevent metallic atom under high temperature from spreading to substrate 6.
As shown in fig. 7, boron nitride/graphene/boron nitride nanometer the film 1 is nitrogenized by upper layer boron nitride layer 16, lower layer
Boron layer 17 and be clipped in graphene layer 18 therein and form, in other embodiments, the upper layer, lower layer's boron nitride the number of plies be greater than
Equal to 1, graphene is single layer structure, the lower layer's boron nitride 17 and graphite of the boron nitride/graphene/boron nitride nanometer film 1
Alkene layer 18 is covered in the upper surface of first metal electrode 21, the second metal electrode 22, upper layer graphene both ends and the first resistance
Barrier 12, the second barrier layer 13, third barrier layer 14, the 4th barrier layer 15 contact, the first barrier layer 12, the second barrier layer 13,
Third barrier layer 14, the 4th barrier layer 15 are used as soakage layer and protective layer, connect the first metal electrode 21, the second metal electrode
22, the first sealing ring 4, the second sealing ring 5 and substrate 6, prevent the phase counterdiffusion of metallic atom and substrate atoms under high temperature.
The principle of the invention is:
When external temperature signal function is when upper surface of substrate, temperature signal can be accelerated to be transmitted to substrate by open-celled structure
The temperature sensitive structure of lower surface, graphene nano film therein are influenced by temperature, the sub- stiffness of coupling of the electroacoustic of material internal,
Phon scattering intensity changes, and changes so as to cause the conductivity of graphene.Pass through the electric current in detection graphene face
Variation can measure the temperature value of external application.Simultaneously in this course, anaerobic vacuum chamber and dual layer nitride boron are graphene
The oxygen barrier protection that layer provides, it is ensured that graphene can work under high temperature environment, to realize under severe complicated hot environment
The high-acruracy survey of temperature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means specific features described in conjunction with this embodiment or example, knot
Structure, material or feature are included at least one embodiment or example of the invention.In the present specification, to above-mentioned term
Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can be combined in any suitable manner in any one or more of the embodiments or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (9)
1. a kind of graphene high temperature sensor, the temperature sensor stablizes work at a high temperature of being in 1700 DEG C~2000 DEG C
Make, which is characterized in that the sensor specifically includes:
At least one package casing, package casing inside upper and lower ends are respectively arranged with a ceramic substrate and a lining
Bottom, the ceramic substrate, the substrate and the package casing define a detection space jointly；
At least one detection unit, the detection unit are arranged in the detection space, and the detection unit includes at least one
A boron nitride/graphene/boron nitride nanometer film and at least two metal electrodes, the substrate is towards the ceramic substrate
Boron nitride/graphene/boron nitride nanometer the film is set on one side, the metal electrode be arranged in the boron nitride/graphene/
On boron nitride nanometer film, and the boron nitride/graphene/boron nitride nanometer film is conducted heat to by substrate and experiences external
Temperature change.
2. a kind of graphene high temperature sensor sensor according to claim 1, which is characterized in that the detection space
The anaerobic vacuum chamber that boron nitride/graphene/boron nitride nanometer film can be isolated with outside air for one.
3. a kind of graphene high temperature sensor sensor according to claim 1, which is characterized in that the substrate is opposite
The porous structure there are many keyhole formation is etched in the one side of ceramic substrate, in one side of the substrate in contrast to porous structure
Arrange the boron nitride/graphene/boron nitride nanometer film, and the area of the boron nitride/graphene/boron nitride nanometer film
Less than the area of the entire substrate.
4. a kind of graphene high temperature sensor according to claim 3, which is characterized in that in the substrate in contrast to more
The one side side of pore structure is supported on the ceramic substrate upper side, the ceramic substrate, substrate and sealing ring by sealing ring
The anaerobic vacuum is constituted, inertia, the lesser gas of thermal expansion coefficient can be filled in the anaerobic vacuum chamber.
5. a kind of graphene high temperature sensor according to claim 4, which is characterized in that the package casing and ceramics
Substrate is connected and is firmly bonded.
6. according to claim 1-5 it is one of any described in a kind of graphene high temperature sensor, which is characterized in that the nitridation
Boron/graphene/boron nitride nanometer film includes upper layer boron nitride layer, lower layer's boron nitride layer and is clipped in single-layer graphene therein.
7. a kind of graphene high temperature sensor according to claim 6, which is characterized in that the metal electrode includes point
First metal electrode and the second metal electrode at the nanometer film both ends are not connected, and first metal electrode passes sequentially through first
Interconnected salient points, the first interconnect pad and first lead column connect external detection component；Second metal electrode passes sequentially through
Two interconnected salient points, the second interconnect pad and the second stem connect external detection component.
8. a kind of graphene high temperature sensor according to claim 7, which is characterized in that in the first metal electricity
It is corresponding between pole, the second metal electrode, sealing ring and substrate to be provided with barrier layer.
9. a kind of graphene high temperature sensor according to claim 8, which is characterized in that lower layer's boron nitride and
Graphene layer is covered in the one side of first metal electrode, the second metal electrode, upper layer graphene both ends with it is described
Barrier layer contact setting.
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| CN115028474A (en) * | 2022-05-11 | 2022-09-09 | 中北大学 | Graphene sensor composite thermal protection structure and preparation thereof |
| CN115655502A (en) * | 2022-12-29 | 2023-01-31 | 中北大学 | Temperature sensor based on piezoresistive characteristic of suspended graphene film |
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