CN111141404A - Film structure graphite alkene high temperature sensor - Google Patents
Film structure graphite alkene high temperature sensor Download PDFInfo
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- CN111141404A CN111141404A CN202010043429.4A CN202010043429A CN111141404A CN 111141404 A CN111141404 A CN 111141404A CN 202010043429 A CN202010043429 A CN 202010043429A CN 111141404 A CN111141404 A CN 111141404A
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- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/16—Special arrangements for conducting heat from the object to the sensitive element
- G01K1/18—Special arrangements for conducting heat from the object to the sensitive element for reducing thermal inertia
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Abstract
A thin film structure graphene high temperature sensor, the sensor includes: the packaging structure comprises a packaging shell, a ceramic end cover arranged at the top end of the packaging shell and a ceramic substrate arranged at the bottom end in the packaging shell, wherein the ceramic end cover is provided with a plurality of through holes; a detection unit disposed on the ceramic substrate; and the interconnection assemblies are arranged on two sides of the detection unit, one end of each interconnection assembly is connected with the detection unit, and the other end of each interconnection assembly is connected with the outside. According to the invention, the detection nano film containing the graphene layer is used for replacing other metal materials or semiconductor materials, so that the temperature measuring interval of the resistance type temperature sensor is increased, and the response speed of the device is increased due to the high thermal conductivity of the graphene material. The detection nano film is wrapped by the aluminum oxide nano film and the substrate, so that interference factors in the surrounding environment are effectively eliminated, and the detection nano film is isolated from external direct contact, so that the high temperature resistance and stability of the device are improved, and the device can be applied to severe high-temperature test environments.
Description
Technical Field
The invention relates to the technical field of high-temperature testing, in particular to a graphene high-temperature sensor with a thin film structure.
Background
Because some parts in the equipment such as aerospace engines, heavy gas turbines, thermal power stations, smelting furnaces and the like work in high-temperature severe environments for a long time, temperature parameters of the high-temperature parts need to be monitored in real time by using temperature sensors, so that the health condition of the equipment is accurately evaluated, the service life of the equipment is prolonged, and safe and reliable operation is guaranteed.
The graphene can resist the high temperature of 3000 ℃ in an oxygen-free environment, and the thermal conductivity of the graphene is as high as 5300W/(m.K), so that the response time of the sensor prepared by the graphene film to the temperature is extremely short. Due to Al2O3Can bear high temperature above 1500 ℃, and the substrate material α -Al2O3The melting point can reach 2030 deg.C, so Al is used2O3Film and α -Al2O3The substrate can stably work in an environment of more than 1500 ℃ after the graphene is subjected to oxygen-free packaging.
The temperature measuring range of the existing metal film high-temperature sensor is 0-1300 ℃, the precision is high, and the performance is stable; but its thermal inertia is large and its response time is long. The maximum measurement temperature of a film high-temperature sensor for an aeroengine turbine blade developed by the research institute of the aeronautical measurement and control technology in the Shanghai is 1100 ℃ [ invention number: CN109338290A ], the upper limit of temperature measurement of a certain type of film temperature sensor for aircraft quick response developed by shanxi electrical apparatus research institute is 1200 ℃, and the response time is less than 50ms [ invention number: CN104748876A ].
The development of a high-temperature-resistant film temperature sensor with quick response, small volume and high performance by utilizing a graphene material is a scientific technology which is urgently needed to be solved at present. Compared with a metal film high-temperature sensor, the graphene high-temperature sensor with the film structure can be used at high temperature of 1500 ℃ and has response time as short as 10 ms.
Disclosure of Invention
In order to effectively solve the defects of the background technical problem, the invention designs the graphene high-temperature sensor with the thin-film structure by using graphene to replace metal and other semiconductor materials. The electrical characteristics of the detection nano film with the graphene layer are changed under the influence of temperature, specifically, the temperature changes the conductivity of the graphene layer, and then the change of the conductivity of the detection nano film is detected through an external detection circuit to realize the measurement of the temperature.
A film structure graphene high-temperature sensor can stably work at a high temperature of 1500 ℃ for a long time, and comprises:
the packaging structure comprises a packaging shell, a ceramic end cover arranged at the top end of the packaging shell and a ceramic substrate arranged at the bottom end in the packaging shell, wherein a plurality of through holes are formed in the ceramic end cover;
the detection unit is arranged in an internal detection space defined by the ceramic end cover, the ceramic substrate and the packaging shell and is positioned on the ceramic substrate;
the interconnection assemblies are arranged on two sides of the detection unit, one end of each interconnection assembly is connected with the detection unit, and the other end of each interconnection assembly is connected with the outside to lead out the electrical response in the detection unit.
Optionally, the detection unit is disposed on a side of the ceramic substrate facing the internal detection space, and the detection unit includes: the detection nano-film is arranged on the ceramic substrate, the detection nano-film is arranged on the upper surface of the substrate, the aluminum oxide nano-film covers the upper surface of the detection nano-film, the metal electrodes are arranged on two sides of the detection nano-film and connected with the detection nano-film, and the barrier layer is arranged between the metal electrodes and the substrate.
Optionally, the detection nano-film is composed of an upper boron nitride layer, a middle graphene layer and a lower boron nitride layer, the upper boron nitride layer, the middle graphene layer and the lower boron nitride layer are sequentially arranged from top to bottom, and the middle graphene layer is of a snake-shaped bent structure or a disc-shaped bent structure.
Optionally, the metal electrode is composed of a composite electrode, a wiring and an internal interconnection electrode, the composite electrode is connected with the internal interconnection electrode through the wiring, the composite electrode is respectively connected with two opposite ends of the middle graphene layer, and the interconnection electrode is connected with the interconnection assembly and used for deriving an electrical response in the detection nano-film.
Optionally, the barrier layer is disposed at the bottom of the composite electrode, wiring and internal interconnection electrode.
Optionally, the interconnect assembly comprises: the interconnection lead, the interconnection pad, the lead post and the external interconnection electrode are connected in sequence.
Optionally, the ceramic substrate is provided with a mounting hole for mounting the lead post, the lead post is disposed in the mounting hole, the interconnection pad is disposed on the ceramic substrate and connected to one end of the lead post, the interconnection pad is provided with an interconnection bump, one end of the interconnection lead is connected to the interconnection bump on the interconnection pad, the other end of the interconnection lead is connected to the internal interconnection electrode, the bottom of the package housing is provided with an opening for accommodating the external interconnection electrode, the external interconnection electrode is disposed at the bottom of the ceramic substrate and connected to the other end of the lead post, and the external interconnection electrode is connected to an external detection component.
The invention has the advantages that the device replaces other metal materials or semiconductor materials with the detection nano film containing the graphene layer on the basis of the original resistance-type temperature sensor, the temperature measuring interval of the resistance-type temperature sensor is greatly improved, and the response speed of the device is effectively improved due to the high thermal conductivity of the graphene material. Meanwhile, the detection nano film is wrapped by the aluminum oxide nano film and the substrate, interference factors in the surrounding environment are effectively eliminated, the aluminum oxide nano film isolates the detection nano film from being in direct contact with the outside, so that the high temperature resistance and stability of the device are improved, the device can be applied to severe high-temperature test environments, the device is a very ideal high-temperature sensor, the device can stably work at 1500 ℃ for a long time, the response time is as low as 10ms, the device is suitable for various high-temperature test environments, and the high-temperature test device has high practical value.
Drawings
FIG. 1 is an external structural view of an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention;
FIG. 3 is a top view of a detecting unit according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a detection nano-film and a metal electrode according to an embodiment of the present invention;
FIG. 5 is a schematic top view of a detecting nano-film and a metal electrode according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a detecting nano-film according to an embodiment of the present invention;
fig. 7 is a schematic top view of a middle graphene layer and a metal electrode according to an embodiment of the invention;
as shown in the figures, the list of reference numbers is as follows:
detecting the nano film-1; a through hole-2; aluminum oxide nano-film-3; composite electrodes-4, 8; wires-5, 9; internal interconnection electrodes-6, 10; ceramic end cap-7; interconnect leads-11, 13; interconnect bumps-12, 14; interconnect pads-15, 17; lead posts-16, 18; a substrate-19; a ceramic substrate-20; a package housing-21; an upper boron nitride layer-22; a middle graphene layer-23; a lower boron nitride layer-24; barrier layers-25, 26; external interconnection electrodes-27, 28.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, are not to be construed as limiting the present invention. In addition, in the description process of the embodiment of the present invention, the positional relationships of the devices such as "upper", "lower", "front", "rear", "left", "right", and the like in all the drawings are based on fig. 1.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention is further described below with reference to the accompanying drawings:
as shown in fig. 1 and 2, which are perspective views of an appearance of a first embodiment of the present invention, a thin-film graphene high-temperature sensor is provided, which can stably operate at a high temperature of 1500 ℃ for a long time, and includes:
the packaging shell 21 is a cylindrical, cubic, rectangular or the like, and is not limited in particular, in the drawings, only a cylindrical structure is shown, and the packaging shell is used for isolating the external environment, supporting and protecting the internal structure;
the ceramic end cover 7 is arranged at the top end of the packaging shell 21, the ceramic end cover 7 is provided with a plurality of through holes 2, the upper surface of the ceramic end cover 7 is in a porous structure formed by the through holes 2, heat can be rapidly transmitted to the inside, and response time is improved, the shape of the through holes 2 is not limited to the round shape shown in the invention, and can also be other shapes such as a square shape and the like, and is not particularly limited;
the ceramic substrate 20 is arranged at the bottom end inside the packaging shell 21, and the ceramic end cover 7, the ceramic substrate 20 and the packaging shell 21 jointly define an internal detection space for supporting and protecting internal elements;
a detection unit disposed in the internal detection space and located on the ceramic substrate 20;
the interconnection assemblies are arranged on two sides of the detection unit, one end of each interconnection assembly is connected with the detection unit, and the other end of each interconnection assembly is connected with the outside.
As shown in fig. 2, which is a cross-sectional view of the overall structure of the first embodiment of the present invention, a ceramic substrate 20 is disposed at the bottom of the internal detection space, and the outer periphery of the ceramic substrate 20 is lap-jointed to the inner surface of the package housing 21.
As shown in fig. 2 to 5, the sensing unit is disposed at a side of the ceramic substrate 20 facing the internal sensing space, and includes: the detection nano-film comprises a detection nano-film 1, metal electrodes, an alumina nano-film 3, a substrate 19 and barrier layers 25 and 26, wherein the substrate 19 is arranged on the ceramic substrate 20, the detection nano-film 1 is arranged on the upper surface of the substrate 19, the alumina nano-film 3 covers the upper surface of the detection nano-film 1, the metal electrodes are arranged on two sides of the detection nano-film 1 and connected with the detection nano-film 1, and the barrier layers 25 and 26 are arranged between the metal electrodes and the substrate 19.
As shown in fig. 2, 4, and 6, the detection nano-film 1 is composed of an upper layer boron nitride layer 22, a middle layer graphene layer 23, and a lower layer boron nitride layer 24, the upper layer boron nitride layer 22, the middle layer graphene layer 23, and the lower layer boron nitride layer 24 are sequentially disposed from top to bottom, the middle layer graphene layer 23 is a serpentine folded "structure, the sensitivity of the middle layer graphene layer 23 adopting the folded structure is high, the structural shape of the middle layer graphene layer 23 is not limited to the" folded "structure shown in the present invention, and may also be in other shapes like a spiral" disc "shaped folding of a mosquito coil, and is not specifically limited, and the number of the folded strips of the middle layer graphene layer 23 is not limited to the number shown in this embodiment, and may also be in other numbers and is not specifically limited. In other embodiments, the number of the upper layer boron nitride layer 22 and the lower layer boron nitride layer 24 is greater than or equal to 1, and the middle layer graphene layer 23 has a single-layer structure. In the invention, the temperature is directly conducted to the middle graphene layer 23 of the detection nano film 1 through the upper alumina nano film 3, so that the external temperature change is sensed, and the response time is greatly prolonged.
As shown in fig. 2 to 7, the metal electrodes are composed of composite electrodes 4, 8, wires 5, 9 and internal interconnection electrodes 6, 10, the composite electrodes 4, 8 are connected with the internal interconnection electrodes 6, 10 through the wires 5, 9, the composite electrodes 4, 8 are respectively connected with two opposite ends of the middle graphene layer 23, and the interconnection electrodes are connected with an interconnection assembly for deriving an electrical response in the detection nano-film 1; the barrier layers 25 and 26 are arranged at the bottoms of the composite electrodes 4 and 8, the wiring 5 and 9 and the internal interconnection electrodes 6 and 10, and the barrier layers 25 and 26 serve as wetting layers and protective layers to isolate the metal electrodes from the substrate 19 and prevent mutual diffusion of metal atoms and substrate atoms at high temperature.
As shown in fig. 2 and 3, the interconnect assembly includes: the interconnection leads 11, 13, the interconnection pads 15, 17, the lead posts 16, 18, and the external interconnection electrodes 27, 28 are connected in sequence, and the interconnection leads 11, 13, the interconnection pads 15, 17, the lead posts 16, 18, and the external interconnection electrodes 27, 28 are connected in sequence. The ceramic substrate 20 is provided with mounting holes for mounting the lead posts 16, 18, the lead posts 16, 18 are arranged in the mounting holes, the interconnection pads 15, 17 are arranged on the ceramic substrate 20 and connected with one ends of the lead posts 16, 18, interconnection bumps 12, 14 are arranged on the interconnection pads 15, 17, one ends of the interconnection leads 11, 13 are connected with the interconnection bumps 12, 14 on the interconnection pads 15, 17, the other ends of the interconnection leads 11, 13 are connected with the internal interconnection electrodes 6, 10, the bottom of the package shell 21 is provided with openings for accommodating the external interconnection electrodes 27, 28, the external interconnection electrodes 27, 28 are arranged at the bottom of the ceramic substrate 20 and connected with the other ends of the lead posts 16, 18, the external interconnection electrodes 27, 28 are connected with an external detection component for transmitting and detecting the electrical response of the nano-film 1 to temperature signals, the external detection component may be a component constituting a complete sensor structure in the prior art. The interconnection leads 11 and 13 are formed by bonding Pt wire leads, and the substrate and the ceramic substrate are in close contact with the ceramic substrate by adopting a Pt-Pt metal bonding technology so as to provide firm support for the temperature sensor chip.
The alumina nano film 3 can be covered on the upper surface of the detection nano film 1 in an evaporation mode to carry out anaerobic packaging on the detection nano film 1, the alumina nano film 3 on the upper surface of the detection nano film 1 and the substrate 19 isolate the detection nano film 1 from external direct contact, and anaerobic protection is provided for the middle layer graphene layer 23 in the detection nano film 1.
The detection nano film is protected by the alumina nano film, and then the ceramic tube shell is used for packaging, so that the packaging is convenient.
In this embodiment, the substrate 19 is a cylinder, and the area of the detection nano-film 1 is smaller than the whole upper side area of the substrate 19.
In the invention, the substrate material can be selected from α -Al2O3The material and the substrate can adopt Al2O3The material, metal electrode and inner and outer interconnection electrodes may be selected from Pt materials.
The packaging shell is connected with the ceramic end cover 7 and the ceramic substrate 20 and is firmly bonded.
The principle of the invention is as follows:
when an external temperature signal acts on the upper surface of the ceramic end cover of the sensor, the temperature can be transmitted to the detection unit through the ceramic end cover on the upper layer, the electric phonon coupling strength and the phonon scattering strength inside the material of the middle layer graphene layer are changed under the influence of the temperature, and therefore the conductivity of the middle layer graphene layer is changed. The externally applied temperature value can be measured by detecting the current change in the middle graphene layer surface. Meanwhile, in the process, the alumina nano film and the substrate are isolated from direct contact of the detection nano film and the outside, oxygen-free protection is provided for the middle graphene layer, and the detection nano film can work in a high-temperature environment, so that high-precision measurement of temperature in a severe and complex high-temperature environment is realized.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (7)
1. The utility model provides a thin film structure graphite alkene high temperature sensor, can stably work at 1500 ℃ high temperature for a long time, its characterized in that, the sensor includes:
the packaging structure comprises a packaging shell (21), a ceramic end cover (7) arranged at the top end of the packaging shell (21) and a ceramic substrate (20) arranged at the bottom end in the packaging shell (21), wherein a plurality of through holes (2) are formed in the ceramic end cover (7);
the detection unit is arranged in an internal detection space jointly defined by the ceramic end cover (7), the ceramic substrate (20) and the packaging shell (21) and is positioned on the ceramic substrate (20);
the interconnection assemblies are arranged on two sides of the detection unit, one end of each interconnection assembly is connected with the detection unit, and the other end of each interconnection assembly is connected with the outside to lead out the electrical response in the detection unit.
2. The thin film structured graphene high temperature sensor according to claim 1, wherein the detection unit is disposed on a side of the ceramic substrate (20) facing the internal detection space, the detection unit including: the detection device comprises a detection nano film (1), a metal electrode, an aluminum oxide nano film (3), a substrate (19) and barrier layers (25, 26), wherein the substrate (19) is arranged on a ceramic substrate (20), the detection nano film (1) is arranged on the upper surface of the substrate (19), the aluminum oxide nano film (3) covers the upper surface of the detection nano film (1), the metal electrode is arranged on two sides of the detection nano film (1) and connected with the detection nano film (1), and the barrier layers (25, 26) are arranged between the metal electrode and the substrate (19).
3. The thin-film graphene high-temperature sensor according to claim 2, wherein the detection nano-film (1) is composed of an upper boron nitride layer (22), a middle graphene layer (23), and a lower boron nitride layer (24), the upper boron nitride layer (22), the middle graphene layer (23), and the lower boron nitride layer (24) are sequentially disposed from top to bottom, and the middle graphene layer (23) has a serpentine bent structure or a disc-shaped bent structure.
4. The thin film structured graphene high temperature sensor according to claim 3, wherein the metal electrodes are composed of composite electrodes (4, 8), wires (5, 9) and internal interconnection electrodes (6, 10), the composite electrodes (4, 8) are connected with the internal interconnection electrodes (6, 10) through the wires (5, 9), the composite electrodes (4, 8) are respectively connected with two opposite ends of the middle graphene layer (23), and the interconnection electrodes are connected with an interconnection assembly for deriving an electrical response in the detection nano-film (1).
5. The thin-film structured graphene high-temperature sensor according to claim 4, wherein the barrier layers (25, 26) are disposed at the bottom of the composite electrodes (4, 8), the wiring lines (5, 9) and the internal interconnection electrodes (6, 10).
6. The thin film structured graphene high temperature sensor according to claim 4, wherein the interconnect assembly comprises: interconnection leads (11, 13), interconnection pads (15, 17), lead posts (16, 18) and external interconnection electrodes (27, 28), the interconnection leads (11, 13), the interconnection pads (15, 17), the lead posts (16, 18) and the external interconnection electrodes (27, 28) being connected in sequence.
7. The thin-film graphene high-temperature sensor according to claim 6, wherein the ceramic substrate (20) is provided with a mounting hole for mounting the lead post (16, 18), the lead post (16, 18) is disposed in the mounting hole, the interconnection pad (15, 17) is disposed on the ceramic substrate (20) and connected to one end of the lead post (16, 18), the interconnection pad (15, 17) is provided with an interconnection bump (12, 14), one end of the interconnection lead (11, 13) is connected to the interconnection bump (12, 14) on the interconnection pad (15, 17), the other end of the interconnection lead (11, 13) is connected to the internal interconnection electrode (6, 10), the bottom of the package housing (21) is provided with an opening for accommodating the external interconnection electrode (27, 28), the external interconnection electrode (27, 28), 28) The external interconnection electrode (27, 28) is connected with an external detection component, and is arranged at the bottom of the ceramic substrate (20) and connected with the other end of the lead post (16, 18).
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| CN202010043429.4A CN111141404A (en) | 2020-01-15 | 2020-01-15 | Film structure graphite alkene high temperature sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112484889A (en) * | 2020-12-20 | 2021-03-12 | 中北大学南通智能光机电研究院 | Graphene high-temperature pressure sensor based on membrane structure |
| CN114166897A (en) * | 2021-11-17 | 2022-03-11 | 中北大学南通智能光机电研究院 | Gas sensor based on graphene microstructure |
| CN115028474A (en) * | 2022-05-11 | 2022-09-09 | 中北大学 | Graphene sensor composite thermal protection structure and preparation thereof |
-
2020
- 2020-01-15 CN CN202010043429.4A patent/CN111141404A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112484889A (en) * | 2020-12-20 | 2021-03-12 | 中北大学南通智能光机电研究院 | Graphene high-temperature pressure sensor based on membrane structure |
| CN114166897A (en) * | 2021-11-17 | 2022-03-11 | 中北大学南通智能光机电研究院 | Gas sensor based on graphene microstructure |
| CN115028474A (en) * | 2022-05-11 | 2022-09-09 | 中北大学 | Graphene sensor composite thermal protection structure and preparation thereof |
| CN115028474B (en) * | 2022-05-11 | 2023-09-08 | 中北大学 | Graphene sensor composite thermal protection structure and preparation thereof |
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