CN112484889A - Graphene high-temperature pressure sensor based on membrane structure - Google Patents
Graphene high-temperature pressure sensor based on membrane structure Download PDFInfo
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- CN112484889A CN112484889A CN202011512612.0A CN202011512612A CN112484889A CN 112484889 A CN112484889 A CN 112484889A CN 202011512612 A CN202011512612 A CN 202011512612A CN 112484889 A CN112484889 A CN 112484889A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention belongs to the technical field of high-temperature pressure testing, and particularly relates to a graphene high-temperature pressure sensor based on a membrane structure, which comprises a packaging shell, an upper end cover, a ceramic base, a detection substrate and an interconnection assembly, wherein the upper end cover is arranged at the top of the packaging shell, the ceramic base is arranged inside the packaging shell, a square mounting groove is formed in the middle of the ceramic base, the detection substrate is arranged in the square mounting groove of the ceramic base, one end of the interconnection assembly is connected with the detection substrate, and the other end of the interconnection assembly is connected with external equipment, so that a pressure signal is transmitted. According to the invention, the two-dimensional material graphene nano-film is used as the load cell, so that the response speed of the pressure sensor is greatly improved; meanwhile, the invention greatly improves the high-temperature tolerance, air tightness and reliability of the sensor, and can stably work at the temperature of more than 700 ℃ in a high-pressure environment of 20 MPa. The invention is used for detecting the pressure.
Description
Technical Field
The invention belongs to the technical field of high-temperature pressure testing, and particularly relates to a graphene high-temperature pressure sensor based on a membrane structure.
Background
Most pressure tests are performed at room temperature, but as science and technology has developed, it has become increasingly important to measure pressure in harsh environments at high temperatures. In-situ testing of pressure parameters is in wide demand in the fields of food, automotive engines, oil exploration, chemical engineering, nuclear power plants and the like. The silicon-based piezoresistive pressure sensor based on the micro-system (MEMS) technology has excellent performance, small volume and mature process, adopts the P-N junction to isolate the piezoresistor from the substrate, and has wide application in room temperature pressure testing equipment. However, due to the semiconductor characteristics of the silicon material (the P-N junction generates leakage current when the operating temperature exceeds 125 ℃), the operation performance of the pressure sensor is reduced and even fails. In addition, the plastic deformation of the silicon material in the high temperature environment may also cause the sensor to fail to meet the requirements of the above application fields for pressure testing in the high temperature environment.
Graphene is a two-dimensional (2D) carbon allotrope composed of a single layer of carbon atoms arranged into a honeycomb lattice. Pressure sensors are one of the most popular microsystem research directions in recent years and are key components of electronic products. Graphene, as an advanced nanomaterial, has excellent properties including ultra-high sensitivity, high electrical conductivity, excellent mechanical properties, flexibility, and high thermal conductivity, and is one of the best nanomaterials for pressure and strain test applications. Therefore, further research and development of graphene-based strain and pressure sensors is of paramount importance.
Disclosure of Invention
Aiming at the technical problem that the working performance of the pressure sensor is reduced or even fails at high temperature, the invention provides the graphene high-temperature pressure sensor based on the membrane structure, which has the advantages of high response speed, strong high-temperature tolerance, good air tightness and high reliability.
In order to solve the technical problems, the invention adopts the technical scheme that:
the utility model provides a graphite alkene high temperature pressure sensor based on membrane structure, is including encapsulation shell, upper end cover, ceramic base, detection substrate and interconnection subassembly, the top of encapsulation shell is provided with the upper end cover, the inside of encapsulation shell is provided with ceramic base, square mounting groove has been seted up at the ceramic base middle part, it sets up in ceramic base's square mounting groove to detect the substrate, interconnection subassembly's one end and detection substrate are connected, interconnection subassembly's the other end and external equipment are connected to come out pressure signal transmission.
The detection substrate comprises a nano-film, a metal electrode, a silicon diaphragm, a lower silicon nitride barrier layer and an upper silicon nitride barrier layer, the nano-film is arranged on the upper surface of the center of the silicon diaphragm, the silicon diaphragm is arranged in a square mounting groove of the ceramic base, the metal electrode is connected to the nano-film and senses external pressure change through the nano-film, the lower silicon nitride barrier layer is arranged between the lower silicon nitride barrier layer and the silicon diaphragm, and the upper silicon nitride barrier layer is arranged on the upper surfaces of the nano-film and the metal electrode.
The interconnection assembly comprises an interconnection lead, an interconnection pad, a lead post and an external interconnection electrode, wherein the interconnection lead, the interconnection pad, the lead post and the external interconnection electrode are sequentially connected, a mounting hole for mounting the lead post is formed in the ceramic base, the lead post is arranged in the mounting hole, the interconnection pad is arranged on the ceramic base, the interconnection pad is connected with one end of the lead post, one end of the interconnection lead is connected with the metal electrode through an interconnection bump, and the other end of the interconnection lead is connected with the interconnection pad through an interconnection bump; the bottom of the packaging shell is provided with an opening for accommodating an external interconnection electrode, the external interconnection electrode is arranged at the bottom of the ceramic base and is connected with the other end of the lead post, and the external interconnection electrode is connected with an external detection circuit.
A substrate is arranged between the detection substrate and the ceramic base, the silicon membrane is connected with the substrate through Cu-Sn bonding, and a sealed cavity is formed between the silicon membrane and the substrate.
The nano-film comprises an upper boron nitride layer, a middle graphene layer and a lower boron nitride layer, wherein the upper boron nitride layer, the middle graphene layer and the lower boron nitride layer are sequentially arranged from top to bottom.
The utility model discloses a multilayer structure, including middle level graphite alkene layer, upper boron nitride layer and lower floor's boron nitride layer, middle level graphite alkene layer is the inflection structure of buckling, upper boron nitride layer and lower floor's boron nitride layer are square structure, the number of piles of upper boron nitride layer and lower floor's boron nitride layer is more than or equal to 1, middle level graphite alkene layer is single-layer structure.
The material of upper end cover adopts the stainless steel, the upper end cover is provided with a plurality of through-holes, the through-hole is circular, square or rectangle.
The detection substrate is welded with the ceramic base through nano silver solder, the nano silver solder is arranged at the edge of the bottom of the ceramic base, and the ceramic base is made of aluminum chloride ceramic material.
The metal electrodes and the external interconnection electrodes are made of copper, and the interconnection leads are formed by bonding Au wire leads.
The packaging shell is welded with the upper end cover through nano silver solder, the outer peripheral side of the ceramic substrate is connected with the inner side face of the packaging shell, the packaging shell is welded with the ceramic base through the nano silver solder, the bottom of the packaging shell is connected with the stainless steel base, and the packaging shell is welded with the stainless steel base through the nano silver solder.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the two-dimensional material graphene nano-film is used as the load cell, so that the response speed of the pressure sensor is greatly improved; meanwhile, the packaging shell, the upper end cover, the detection substrate and the base are connected by the nano-silver connecting layer, so that the high-temperature tolerance, the air tightness and the reliability of the sensor are greatly improved, and the sensor can stably work at the temperature of over 700 ℃ in a high-pressure environment of 20 MPa.
Drawings
FIG. 1 is a schematic external view of the present invention;
FIG. 2 is a cross-sectional view of the overall structure of the present invention;
FIG. 3 is a schematic view of the overall structure of the detecting substrate of the present invention;
FIG. 4 is a schematic view of the internal structure of the detecting substrate according to the present invention;
FIG. 5 is a schematic structural diagram of a nano-film according to the present invention.
Wherein: the structure of the detection device comprises a packaging shell 1, an upper end cover 2, a ceramic base 3, a detection substrate 4, an interconnection assembly 5, a substrate 6, a stainless steel base 7, a through hole 21, a nano film 41, a metal electrode 42, a silicon membrane 43, a lower silicon nitride barrier layer 44, an upper silicon nitride barrier layer 45, an interconnection lead 51, an interconnection pad 52, a lead post 53, an interconnection bump 55, a sealed cavity 46, an upper boron nitride layer 411, a middle graphene layer 412 and a lower boron nitride layer 413.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the invention and simplifying the description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention is further described below with reference to the accompanying drawings:
the utility model provides a graphite alkene high temperature pressure sensor based on membrane structure, as shown in figure 1, as shown in figure 2, including encapsulation shell 1, upper end cover 2, ceramic base 3, detect substrate 4 and interconnection subassembly 5, encapsulation shell 1's top is provided with upper end cover 2, encapsulation shell 1's inside is provided with ceramic base 3, square mounting groove has been seted up at ceramic base 3 middle part, it sets up in ceramic base 3's square mounting groove to detect substrate 4, interconnection subassembly 5's one end is connected with detection substrate 4, interconnection subassembly 5's the other end and external equipment are connected, thereby come out pressure signal transmission.
Further, as shown in fig. 3 and 5, the detection substrate 4 includes a nano-film 41, a metal electrode 42, a silicon membrane 43, a lower silicon nitride barrier layer 44 and an upper silicon nitride barrier layer 45, and the nano-film 41 is disposed on the upper surface of the silicon membrane 43 at the center to facilitate transferring the maximum strain of the silicon membrane 43. Silicon diaphragm 43 sets up in ceramic substrate 3's square mounting groove, and metal electrode 42 connects and locates on nanometer film 41 for derive the electricity signal in nanometer film 41, experiences the external pressure change through nanometer film 41, and lower floor's silicon nitride barrier layer 44 sets up between lower floor's silicon nitride barrier layer 44 and silicon diaphragm 43, and upper silicon nitride barrier layer 45 sets up the upper surface at nanometer film 41 and metal electrode 42.
Further, as shown in fig. 4, the interconnection component 5 includes an interconnection lead 51, an interconnection pad 52, a lead post 53 and an external interconnection electrode, the interconnection lead 51, the interconnection pad 52, the lead post 53 and the external interconnection electrode are sequentially connected, a mounting hole 31 for mounting the lead post 53 is formed on the ceramic base 3, the lead post 53 is disposed in the mounting hole 31, the interconnection pad 52 is disposed on the ceramic base 3, the interconnection pad 52 is connected with one end of the lead post 53, one end of the interconnection lead 51 is connected with the metal electrode 42 through an interconnection bump 55, and the other end of the interconnection lead 51 is connected with the interconnection pad 52 through an interconnection bump 55; the bottom of the package housing 1 is provided with an opening for accommodating an external interconnection electrode, the external interconnection electrode is arranged at the bottom of the ceramic base 3, the external interconnection electrode is connected with the other end of the lead post 53, and the external interconnection electrode is connected with an external detection circuit.
Further, a substrate 6 is arranged between the detection substrate 4 and the ceramic base 3, the silicon diaphragm 43 and the substrate 6 are connected through Cu-Sn bonding, and a sealed cavity 46 is formed between the silicon diaphragm 43 and the substrate 6.
Further, the nano-film 41 includes an upper layer boron nitride layer 411, a middle layer graphene layer 412, and a lower layer boron nitride layer 413, and the upper layer boron nitride layer 411, the middle layer graphene layer 412, and the lower layer boron nitride layer 413 are sequentially disposed from top to bottom. The middle graphene layer 412 is in contact with the lower silicon nitride barrier layer 44 and the upper silicon nitride barrier layer 45, and the lower silicon nitride barrier layer 44 and the upper silicon nitride barrier layer 45 serve as a wetting layer and a protective layer to connect the metal electrode 42 and the substrate 6, so that mutual diffusion of metal atoms and substrate atoms is prevented.
Further, preferably, the middle graphene layer 412 is a folded structure, the upper boron nitride layer 411 and the lower boron nitride layer 413 are square structures, the number of layers of the upper boron nitride layer 411 and the lower boron nitride layer 413 is equal to or greater than 1, and the middle graphene layer 412 is a single-layer structure.
Further, preferably, the material of the upper end cap 2 is stainless steel, and the upper end cap 2 is provided with a plurality of through holes 21, and the through holes 21 are circular, square or rectangular.
Further, preferably, the detection substrate 4 and the ceramic base 3 are welded by a nano silver solder, the nano silver solder is arranged at the edge of the bottom of the ceramic base 3, and the ceramic base 3 is made of an aluminum chloride ceramic material.
Further, preferably, the metal electrode 42 and the external interconnection electrode are made of copper, the interconnection lead 51 is formed by bonding an Au wire, and a combination mode of lead interconnection and lead posts is adopted, so that the high-temperature tolerance of the sensor is greatly improved, the thermal failure of copper TSV interconnection at high temperature is avoided, and the sensor can work at high temperature more favorably.
Further, preferably, the package housing 1 and the upper end cover 2 are welded by a nano silver solder, the outer peripheral side of the ceramic substrate 3 is connected with the inner side surface of the package housing 1, the package housing 1 and the ceramic base 3 are welded by a nano silver solder, the bottom of the package housing 1 is connected with the stainless steel base 7, and the package housing 1 and the stainless steel base 7 are welded by a nano silver solder.
The working principle of the invention is as follows:
when an external pressure signal acts on the surface of the stainless steel upper end cover 2 of the sensor, the pressure is transmitted to the upper surface of the detection substrate 4 through the through hole 21 in the middle of the upper end cover 2, the nano film 41 of the detection substrate 4 is affected by the pressure, and the graphene force sensitive structure deforms, so that the conductivity of the nano film 41 changes. The externally applied pressure value can be measured by detecting the current change in the nano-film 41. Meanwhile, in the process, the contact area between the nano film 41 and the outside is reduced by the upper end cover 2 and the packaging shell 1, so that support is provided for a sensor structure, and the nano film 41 can work in a high-pressure environment, so that high-precision measurement of pressure in a severe complex high-temperature high-pressure environment is realized.
Although only the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art, and all changes are encompassed in the scope of the present invention.
Claims (10)
1. The utility model provides a graphite alkene high temperature pressure sensor based on membrane structure which characterized in that: including encapsulation shell (1), upper end cover (2), ceramic base (3), detection substrate (4) and interconnection subassembly (5), the top of encapsulation shell (1) is provided with upper end cover (2), the inside of encapsulation shell (1) is provided with ceramic base (3), square mounting groove has been seted up at ceramic base (3) middle part, detect substrate (4) and set up in the square mounting groove of ceramic base (3), the one end and the detection substrate (4) of interconnection subassembly (5) are connected, the other end and the external equipment of interconnection subassembly (5) are connected to come out pressure signal transmission.
2. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 1, wherein: the detection substrate (4) comprises a nano film (41), a metal electrode (42), a silicon membrane (43), a lower silicon nitride barrier layer (44) and an upper silicon nitride barrier layer (45), the upper surface of the center of the silicon membrane (43) is arranged on the nano film (41), the silicon membrane (43) is arranged in a square mounting groove of the ceramic base (3), the metal electrode (42) is connected to the nano film (41), the change of external pressure is sensed through the nano film (41), the lower silicon nitride barrier layer (44) is arranged between the lower silicon nitride barrier layer (44) and the silicon membrane (43), and the upper silicon nitride barrier layer (45) is arranged on the upper surfaces of the nano film (41) and the metal electrode (42).
3. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 1, wherein: the interconnection assembly (5) comprises an interconnection lead (51), an interconnection pad (52), a lead post (53) and an external interconnection electrode, wherein the interconnection lead (51), the interconnection pad (52), the lead post (53) and the external interconnection electrode are sequentially connected, a mounting hole (31) for mounting the lead post (53) is formed in the ceramic base (3), the lead post (53) is arranged in the mounting hole (31), the interconnection pad (52) is arranged on the ceramic base (3), the interconnection pad (52) is connected with one end of the lead post (53), one end of the interconnection lead (51) is connected with the metal electrode (42) through an interconnection bump (55), and the other end of the interconnection lead (51) is connected with the interconnection pad (52) through an interconnection bump (55); the bottom of the packaging shell (1) is provided with an opening for accommodating an external interconnection electrode, the external interconnection electrode is arranged at the bottom of the ceramic base (3), the external interconnection electrode is connected with the other end of the lead post (53), and the external interconnection electrode is connected with an external detection circuit.
4. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 2, wherein: a substrate (6) is arranged between the detection substrate (4) and the ceramic base (3), the silicon diaphragm (43) and the substrate (6) are connected in a bonding mode through Cu-Sn, and a sealed cavity (46) is formed between the silicon diaphragm (43) and the substrate (6).
5. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 2, wherein: the nano-film (41) comprises an upper layer boron nitride layer (411), a middle layer graphene layer (412) and a lower layer boron nitride layer (413), wherein the upper layer boron nitride layer (411), the middle layer graphene layer (412) and the lower layer boron nitride layer (413) are sequentially arranged from top to bottom.
6. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 5, wherein: the utility model discloses a multilayer composite film, including middle level graphite alkene layer (412), upper boron nitride layer (411) and lower floor boron nitride layer (413), the number of layers of middle level graphite alkene layer (412) is the inflection structure of buckling, upper boron nitride layer (411) and lower floor boron nitride layer (413) are square structure, the number of layers of upper boron nitride layer (411) and lower floor boron nitride layer (413) more than or equal to 1, middle level graphite alkene layer (412) are single-layer structure.
7. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 1, wherein: the material of upper end cover (2) adopts the stainless steel, upper end cover (2) are provided with a plurality of through-holes (21), through-hole (21) are circular, square or rectangle.
8. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 1, wherein: the detection substrate (4) is welded with the ceramic base (3) through nano silver solder, the nano silver solder is arranged at the edge of the bottom of the ceramic base (3), and the ceramic base (3) is made of aluminum chloride ceramic materials.
9. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 3, wherein: the metal electrode (42) and the external interconnection electrode are made of copper, and the interconnection lead (51) is formed by Au wire bonding.
10. The graphene high-temperature pressure sensor based on the membrane structure as claimed in claim 1, wherein: the packaging structure is characterized in that the packaging shell (1) is welded with the upper end cover (2) through nano silver solder, the outer peripheral side of the ceramic substrate (3) is connected with the inner side surface of the packaging shell (1), the packaging shell (1) is welded with the ceramic base (3) through the nano silver solder, the bottom of the packaging shell (1) is connected with the stainless steel base (7), and the packaging shell (1) is welded with the stainless steel base (7) through the nano silver solder.
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| CN202011512612.0A CN112484889A (en) | 2020-12-20 | 2020-12-20 | Graphene high-temperature pressure sensor based on membrane structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114544063A (en) * | 2022-02-22 | 2022-05-27 | 中北大学 | Graphene-based irradiation-resistant pressure sensor |
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- 2020-12-20 CN CN202011512612.0A patent/CN112484889A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114544063A (en) * | 2022-02-22 | 2022-05-27 | 中北大学 | Graphene-based irradiation-resistant pressure sensor |
| CN114544063B (en) * | 2022-02-22 | 2023-06-20 | 中北大学 | Graphene-based irradiation-resistant pressure sensor |
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Effective date of registration: 20221206 Address after: No. 3, Xueyuan Road, Taiyuan, Shanxi 030006 Applicant after: NORTH University OF CHINA Applicant after: Nantong Institute for Advanced Study Address before: 226000 building w-9, Zilang science and Technology City, central innovation District, Nantong City, Jiangsu Province Applicant before: Nantong Institute of intelligent optics, North China University Applicant before: NORTH University OF CHINA |