CN211904517U - Graphene high-pressure sensor based on cross beam structure - Google Patents
Graphene high-pressure sensor based on cross beam structure Download PDFInfo
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- CN211904517U CN211904517U CN202020437607.7U CN202020437607U CN211904517U CN 211904517 U CN211904517 U CN 211904517U CN 202020437607 U CN202020437607 U CN 202020437607U CN 211904517 U CN211904517 U CN 211904517U
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Abstract
A graphene high-pressure sensor based on a cross beam structure comprises: the bottom of the inner side of the packaging shell is provided with a mounting groove; the membrane is arranged on the top of the packaging shell; the base is arranged in the mounting groove; the substrate is arranged on the base, a square hole is formed in the center of the substrate, a cross beam is arranged on the square hole, and graphene piezoresistive junctions are arranged at the connecting positions of the cross beam and the substrate; and one end of the convex column is connected to the bottom of the diaphragm, and the other end of the convex column is connected with the center of the cross beam. The utility model discloses on silicon structure substrate and stainless steel diaphragm basic framework, adopt the cross beam structure at utmost to improve the pressure measurement scope, the at utmost utilizes the pressure sensitive characteristic of graphite alkene piezoresistive knot, and sensitivity further improves, bears the device simultaneously and improves the temperature to 300 ℃, and the measurement advantage is obvious under the high temperature high pressure, and the filtration of rethread piezoresistive knot bridge circuit becomes and is applied to the high temperature pressure sensor of ten minutes ideal under dynamic, static high temperature high pressure environment.
Description
Technical Field
The utility model belongs to the technical field of high-pressure measurement, concretely relates to graphite alkene high pressure sensor based on cross beam structure.
Background
The high-pressure sensor is widely applied to pressure measurement in the fields of explosion fields, shock waves, gun bores, oil well drilling, deep sea exploration, chemical pharmacy and the like. However, the conventional pressure sensor adopts a C-shaped square membrane structure, the square membrane structure has the advantages of simple manufacturing process, high sensitivity and the like, after the pressure measurement range is enlarged, the sensitivity is greatly influenced, and most of force sensitive resistor materials adopted by the conventional pressure sensor are silicon materials, so that the performance of the force sensitive resistor materials is unstable in a high-temperature environment.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a graphite alkene high pressure sensor based on cross beam structure to solve the traditional pressure sensor who proposes in the above-mentioned background art and after the increase of measurement pressure scope, sensitivity will receive very big influence, traditional pressure sensor problem unstable performance under high temperature environment in addition.
In order to achieve the above object, the utility model provides a following technical scheme:
a graphene high-pressure sensor based on a cross beam structure comprises:
the bottom of the inner side of the packaging shell is provided with a mounting groove;
a diaphragm disposed on top of the package housing;
the base is arranged in the mounting groove;
the substrate is arranged on the base, a square hole is formed in the center of the substrate, a cross beam is arranged on the square hole, and graphene piezoresistive junctions are arranged at the joints of the cross beam and the substrate;
and one end of the convex column is connected to the bottom of the diaphragm, and the other end of the convex column is connected with the center of the cross beam.
Optionally, the graphene piezoresistive junction comprises: the nano-film is arranged on the upper surface of the cross beam, the nano-film is arranged close to the joint of the cross beam and the substrate, and the composite electrode is arranged on the substrate and close to the nano-film.
Optionally, the nano-film is composed of an upper layer of boron nitride film, a lower layer of boron nitride film and a graphene film sandwiched between the two layers of boron nitride films, the graphene film is of a serpentine bending structure, and two ends of the graphene film are respectively connected with the composite electrode.
Optionally, through-silicon vias are disposed on the substrate and near the composite electrodes, a plurality of interconnection pads are disposed between the substrate and the base, the interconnection pads are disposed at bottoms of the through-silicon vias, and the composite electrodes are electrically connected to the interconnection pads through the through-silicon vias.
Optionally, the interconnect pad has a gap between the substrate and the base.
Optionally, the outer surface of the substrate is provided with a protective layer of silicon oxide.
Optionally, the base is provided with a plurality of mounting holes, the mounting holes are internally provided with lead posts, the bottom ends of the lead posts are provided with external interconnection electrodes, one ends of the lead posts are electrically connected with the interconnection pads through wiring, and the bottom of the package shell is provided with an opening for exposing the external interconnection electrodes for connecting with an external detection device.
Optionally, the nano-film is connected with an external resistor to form a half wheatstone bridge, wherein the formula of the wheatstone bridge is UOutput of＝UInput device*R1/(R1+R3)-UInput device*R4/(R2+R4) R in the formula1、R3Is the resistance value of the piezoresistive junction, R2、R4The resistance is constant.
Optionally, the diaphragm is a cylinder, a groove is arranged in the center of the top of the diaphragm, and the cross section of the groove is in an inverted trapezoid shape.
Optionally, the exterior of the package housing is provided with a threaded structure for connection to an externally mounted component.
The beneficial effects of the utility model reside in that: the utility model discloses on silicon structure substrate and stainless steel diaphragm basic framework, adopt the cross beam structure at utmost to improve the pressure measurement scope, make the device can bear pressure under the 400MPa, the at utmost has utilized the pressure sensitive characteristic of graphite alkene piezoresistive knot, sensitivity further improves, bear the temperature with the device simultaneously and improve to 300 ℃, to prior art, the device is measured the advantage under high temperature high pressure obviously, the filtration of rethread piezoresistive knot bridge road, the device can become and be applied to developments, the high temperature pressure sensor of ten minutes ideal under the static high temperature high pressure environment.
Drawings
FIG. 1 is a schematic view of the external structure of the present invention;
FIG. 2 is a schematic view of the internal structure of the present invention;
FIG. 3 is a top view of a substrate according to the present invention;
fig. 4 is a schematic structural view of the graphene piezoresistive junction of the present invention;
FIG. 5 is a cross-sectional view of the nano-film of the present invention;
FIG. 6 is a Wheatstone bridge diagram according to the present invention;
in the figure: 1-packaging the housing; 2-convex column; 3-a membrane; 4-a substrate; 5-through silicon vias; 6-external interconnection electrode; 7-interconnect pads; 8-a silicon oxide protective layer; 9-a composite electrode; 10-graphene piezoresistive junctions; 11-a cross beam; 12-a nano-film; 13-a base; 14-a lead post; 15-boron nitride film; 16-graphene thin films.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1-2, a graphene high-pressure sensor based on a cross beam structure includes:
the packaging structure comprises a packaging shell 1, wherein a mounting groove is formed in the bottom of the inner side of the packaging shell 1, a thread structure is arranged outside the packaging shell 1 and used for connecting an external mounting component, the packaging shell 1 can be in different shapes such as square, rectangle and circle, and is not particularly limited, and in the embodiment and the attached drawings, a cylindrical structure is taken as an example;
the diaphragm 3 is arranged at the top of the packaging shell 1, the diaphragm 3 can be connected to the packaging shell 1 through laser welding, and the diaphragm 3 seals the top of the packaging shell 1 to form an oxygen-free vacuum environment inside the packaging shell 1 so as to protect the internal structure;
the base 13 is arranged in the mounting groove, and the base 13 can be made of piezoelectric ceramic materials so that the device can be resistant to high-temperature and high-pressure environments of 100-300 ℃ and 100-400 MPa to the maximum extent;
the substrate 4 is arranged on the base 13, a square hole is formed in the center of the substrate 4, a cross beam is arranged on the square hole, and graphene piezoresistive junctions 10 are arranged at the connecting positions of the cross beam 11 and the substrate 4;
one end of the convex column 2 is connected to the bottom of the diaphragm 13, the other end of the convex column 2 is connected with the center of the cross beam 11, the convex column 2 is connected with the cross beam 11 through metal bonding, the convex column 2 is used for transmitting pressure applied to the diaphragm 3, and when the pressure is too high, the convex column 2 has the functions of buffering and protecting the internal structure of the chip.
As shown in fig. 2-3, the cross beam 11 is disposed on the square hole of the substrate 4 and located at the center of the square hole, four ends of the cross beam 11 are respectively connected to the inner walls of the square hole, and the upper surface of the cross beam 11 and the upper surface of the substrate 4 are located on the same horizontal plane. Compared with the traditional pressure sensor which adopts a C-shaped structure mostly and needs to thin the thickness of an elastic film for improving the sensitivity, the nonlinearity is increased, the cross beam structure can greatly reduce the central deflection, the nonlinearity error is reduced, and the sensitivity of the pressure sensor is improved.
As shown in fig. 2-5, the graphene piezoresistive junction 10 includes: the device comprises a nanometer film 12 and composite electrodes 9, wherein the two composite electrodes 9 are respectively electrically connected with two ends of the nanometer film 12, the nanometer film 12 is arranged on the upper surface of the cross beam 11, the nanometer film 12 is arranged close to the joint of the cross beam 11 and the substrate 4, and the composite electrodes 9 are arranged on the substrate 4 close to the nanometer film 12. The joint of the cross beam 11 and the substrate 4 is the place with the maximum surface stress on the cross beam 11, and the nano film 12 is arranged at the place, so that the sensitivity of the device can be greatly improved.
As shown in fig. 5, the nano-film 12 is composed of an upper layer of boron nitride film 15 and a lower layer of boron nitride film 15, and a graphene film 16 sandwiched between the two layers of boron nitride films 15, the graphene film 16 is of a serpentine bending structure, two ends of the graphene film 16 are respectively connected with the composite electrode 9, and since the nano-film 12 is disposed at a place where the surface stress on the cross beam 11 is maximum, the graphene film 16 accurately senses the strain of the cross beam 11, and the folding number of the graphene film 16 can be changed according to the measurement requirement.
As shown in fig. 2, through-silicon vias 5 (i.e., TSVs) are disposed on the substrate 4 near the composite electrodes 9, a plurality of interconnection pads 7 are disposed between the substrate 4 and the base 13, the interconnection pads 7 are disposed at the bottoms of the through-silicon vias 5, the composite electrodes 9 are electrically connected to the interconnection pads 7 through the through-silicon vias 5, gaps are formed between the substrate 4 and the base 13 by the interconnection pads 7, and the interconnection pads 7 serve as a wetting layer and a barrier layer to connect the through-silicon vias 5 and the lead posts 14, and are mainly used for preventing diffusion of gold atoms at high temperature.
As shown in fig. 2, the outer surface of the substrate 4 is provided with a silicon oxide protective layer 8, and the silicon oxide protective layer 8 is arranged on the outer surface of the substrate 4 as a silicon material mask for preventing the bonding metal material from leaking and protecting the substrate 4 from being damaged.
As shown in fig. 2, a plurality of mounting holes are formed in the base 13, lead posts 14 are disposed in the mounting holes, external interconnection electrodes 6 are disposed at bottom ends of the lead posts 14, one ends of the lead posts 14 are electrically connected to the interconnection pads 7 through wires, and an opening for exposing the external interconnection electrodes 6 is formed at the bottom of the package casing 1 for connecting with an external detection device, so as to transmit electrical signals generated by pressure changes of the graphene piezoresistive junctions 10 to the external detection device.
As shown in FIG. 6, the nano-film 12 is connected with an external resistor to form a half Wheatstone bridge, wherein the formula of the Wheatstone bridge is UOutput of＝UInput device*R1/(R1+R3)-UInput device*R4/(R2+R4) R in the formula1、R3Is the resistance value of the piezoresistive junction, R2、R4Is a constant resistance, R when the resistance and the pressure are zero1、R3Equal, when the pressure is zero, UOutput ofIs 0, R is1、R3The resistance value is increased, the decrement in the formula is increased, the decrement is reduced, and the testing precision is greatly improved.
As shown in fig. 1-2, the diaphragm 3 is a cylinder, a groove is arranged in the center of the top of the diaphragm 3, the cross section of the groove is in an inverted trapezoid shape, the groove can be formed by etching through a metal processing technology, and the center of the lower surface of the diaphragm 3 is connected with one end of the convex column 2.
The utility model discloses in, 316L stainless steel material can all be chooseed for use to diaphragm 3 and projection 2, and Si material can be chooseed for use to substrate 4, and 316L stainless steel material can be chooseed for use to encapsulation shell 1.
The metal bonding mode of the present invention includes but is not limited to Cu-Sn bonding, Au-Sn bonding, Cu-Cu bonding or Au-Au bonding.
The utility model discloses a theory of operation and use flow: the utility model discloses when using, external pressure acts on diaphragm 3 and makes it produce deformation, pressure conduction to projection 2, projection 2 produces the displacement and acts on cross 11 again, cross 11 is owing to receive vibrations and drive graphite alkene piezoresistive knot 10 and take place vertical deformation, nanometer film 12 in graphite alkene piezoresistive knot 10 receives the equipartition load effect after, the interatomic distance between graphite alkene and boron nitride changes thereupon, make the energy gap opened in the energy band of graphite alkene, thereby influence the conductivity of graphite alkene, wheatstone bridge loses balance thereupon, produce electrical signal then, can obtain the pressure size that the sensor received through detecting electrical signal and calculating.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a graphite alkene high pressure sensor based on cross beam structure which characterized in that includes:
the packaging structure comprises a packaging shell (1), wherein a mounting groove is formed in the bottom of the inner side of the packaging shell (1);
a diaphragm (3), wherein the diaphragm (3) is arranged on the top of the packaging shell (1);
a base (13), the base (13) being disposed within the mounting slot;
the substrate (4) is arranged on the base (13), a square hole is formed in the center of the substrate (4), a cross beam is arranged on the square hole, and graphene piezoresistive junctions (10) are arranged at the connecting positions of the cross beam (11) and the substrate (4);
one end of the convex column (2) is connected to the bottom of the diaphragm (3), and the other end of the convex column (2) is connected with the center of the cross beam (11).
2. The crossbar-structure-based graphene high-pressure sensor according to claim 1, wherein the graphene piezoresistive junction (10) comprises: the device comprises a nano-film (12) and composite electrodes (9), wherein the two composite electrodes (9) are respectively electrically connected with two ends of the nano-film (12), the nano-film (12) is arranged on the upper surface of the cross beam (11), the nano-film (12) is arranged close to the joint of the cross beam (11) and the substrate (4), and the composite electrodes (9) are arranged on the substrate (4) and close to the nano-film (12).
3. The graphene high-pressure sensor based on the cross beam structure is characterized in that the nano thin film (12) is composed of an upper layer boron nitride thin film (15) and a lower layer boron nitride thin film (15) and a graphene thin film (16) sandwiched between the two layers boron nitride thin films (15), the graphene thin film (16) is of a serpentine bending structure, and two ends of the graphene thin film (16) are respectively connected with the composite electrode (9).
4. The graphene high-pressure sensor based on the cross beam structure as claimed in claim 2, wherein through silicon vias (5) are formed in the substrate (4) near the composite electrode (9), a plurality of interconnection pads (7) are disposed between the substrate (4) and the base (13), the interconnection pads (7) are disposed at the bottoms of the through silicon vias (5), and the composite electrode (9) is electrically connected with the interconnection pads (7) through the through silicon vias (5).
5. The graphene high-pressure sensor based on a cross-beam structure according to claim 4, wherein the interconnection pad (7) has a gap between the substrate (4) and the base (13).
6. The graphene high-pressure sensor based on a cross beam structure according to claim 1, wherein the outer surface of the substrate (4) is provided with a silicon oxide protective layer (8).
7. The graphene high-pressure sensor based on the cross beam structure as claimed in claim 5, wherein a plurality of mounting holes are formed in the base (13), lead posts (14) are disposed in the mounting holes, external interconnection electrodes (6) are disposed at bottom ends of the lead posts (14), one ends of the lead posts (14) are electrically connected with the interconnection pads (7) through wires, and an opening for exposing the external interconnection electrodes (6) is formed at the bottom of the package housing (1) for connecting with an external detection device.
8. Cross beam based on claim 2The graphene high-pressure sensor with the structure is characterized in that the nano film (12) is connected with an external resistor to form a half Wheatstone bridge, wherein the formula of the Wheatstone bridge is UOutput of＝UInput device*R1/(R1+R3)-UInput device*R4/(R2+R4) R in the formula1、R3Is the resistance value of the piezoresistive junction, R2、R4The resistance is constant.
9. The graphene high-pressure sensor based on the cross beam structure is characterized in that the diaphragm (3) is a cylinder, a groove is arranged in the center of the top of the diaphragm (3), and the cross section of the groove is in an inverted trapezoid shape.
10. The graphene high-pressure sensor based on the cross beam structure is characterized in that a thread structure is arranged outside the packaging shell (1) and used for connecting an external mounting component.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020437607.7U CN211904517U (en) | 2020-03-31 | 2020-03-31 | Graphene high-pressure sensor based on cross beam structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020437607.7U CN211904517U (en) | 2020-03-31 | 2020-03-31 | Graphene high-pressure sensor based on cross beam structure |
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| CN211904517U true CN211904517U (en) | 2020-11-10 |
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| CN202020437607.7U Active CN211904517U (en) | 2020-03-31 | 2020-03-31 | Graphene high-pressure sensor based on cross beam structure |
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