CN111337185A - Graphene high-pressure sensor based on cross beam structure - Google Patents
Graphene high-pressure sensor based on cross beam structure Download PDFInfo
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- CN111337185A CN111337185A CN202010240198.6A CN202010240198A CN111337185A CN 111337185 A CN111337185 A CN 111337185A CN 202010240198 A CN202010240198 A CN 202010240198A CN 111337185 A CN111337185 A CN 111337185A
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- cross beam
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A graphene high-pressure sensor based on a cross beam structure comprises: the bottom of the inner side of the packaging shell is provided with a mounting groove; the membrane is arranged on the top of the packaging shell; the base is arranged in the mounting groove; the substrate is arranged on the base, a square hole is formed in the center of the substrate, a cross beam is arranged on the square hole, and graphene piezoresistive junctions are arranged at the connecting positions of the cross beam and the substrate; and one end of the convex column is connected to the bottom of the diaphragm, and the other end of the convex column is connected with the center of the cross beam. On the basis of basic architectures of a silicon structure substrate and a stainless steel diaphragm, the invention adopts a cross beam structure to furthest improve the pressure measurement range, furthest utilizes the pressure-sensitive characteristic of a graphene piezoresistive junction, further improves the sensitivity, simultaneously improves the bearing temperature of a device to 300 ℃, has obvious measurement advantages under high temperature and high pressure, and becomes a highly ideal high-temperature pressure sensor applied to dynamic and static high-temperature and high-pressure environments by filtering through a piezoresistive junction bridge circuit.
Description
Technical Field
The invention belongs to the technical field of high-pressure measurement, and particularly relates to a graphene high-pressure sensor based on a cross beam structure.
Background
The high-pressure sensor is widely applied to pressure measurement in the fields of explosion fields, shock waves, gun bores, oil well drilling, deep sea exploration, chemical pharmacy and the like. However, the conventional pressure sensor adopts a C-shaped square membrane structure, the square membrane structure has the advantages of simple manufacturing process, high sensitivity and the like, after the pressure measurement range is enlarged, the sensitivity is greatly influenced, and most of force sensitive resistor materials adopted by the conventional pressure sensor are silicon materials, so that the performance of the force sensitive resistor materials is unstable in a high-temperature environment.
Disclosure of Invention
The invention aims to provide a graphene high-pressure sensor based on a cross beam structure, and aims to solve the problems that the sensitivity of the traditional pressure sensor provided in the background art is greatly influenced after the pressure measuring range is enlarged, and the performance of the traditional pressure sensor is unstable in a high-temperature environment.
In order to achieve the purpose, the invention provides the following technical scheme:
a graphene high-pressure sensor based on a cross beam structure comprises:
the bottom of the inner side of the packaging shell is provided with a mounting groove;
a diaphragm disposed on top of the package housing;
the base is arranged in the mounting groove;
the substrate is arranged on the base, a square hole is formed in the center of the substrate, a cross beam is arranged on the square hole, and graphene piezoresistive junctions are arranged at the joints of the cross beam and the substrate;
and one end of the convex column is connected to the bottom of the diaphragm, and the other end of the convex column is connected with the center of the cross beam.
Optionally, the graphene piezoresistive junction comprises: the nano-film is arranged on the upper surface of the cross beam, the nano-film is arranged close to the joint of the cross beam and the substrate, and the composite electrode is arranged on the substrate and close to the nano-film.
Optionally, the nano-film is composed of an upper layer of boron nitride film, a lower layer of boron nitride film and a graphene film sandwiched between the two layers of boron nitride films, the graphene film is of a serpentine bending structure, and two ends of the graphene film are respectively connected with the composite electrode.
Optionally, through-silicon vias are disposed on the substrate and near the composite electrodes, a plurality of interconnection pads are disposed between the substrate and the base, the interconnection pads are disposed at bottoms of the through-silicon vias, and the composite electrodes are electrically connected to the interconnection pads through the through-silicon vias.
Optionally, the interconnect pad has a gap between the substrate and the base.
Optionally, the outer surface of the substrate is provided with a protective layer of silicon oxide.
Optionally, the base is provided with a plurality of mounting holes, the mounting holes are internally provided with lead posts, the bottom ends of the lead posts are provided with external interconnection electrodes, one ends of the lead posts are electrically connected with the interconnection pads through wiring, and the bottom of the package shell is provided with an opening for exposing the external interconnection electrodes for connecting with an external detection device.
Optionally, the nano-film is connected with an external resistor to form a half wheatstone bridge, wherein the formula of the wheatstone bridge is UOutput of＝UInput device*R1/(R1+R3)-UInput device*R4/(R2+R4) R in the formula1、R3Is the resistance value of the piezoresistive junction, R2、R4The resistance is constant.
Optionally, the diaphragm is a cylinder, a groove is arranged in the center of the top of the diaphragm, and the cross section of the groove is in an inverted trapezoid shape.
Optionally, the exterior of the package housing is provided with a threaded structure for connection to an externally mounted component.
The invention has the beneficial effects that: according to the invention, on the basis of basic architectures of a silicon structure substrate and a stainless steel membrane, a cross beam structure is adopted to furthest improve the pressure measurement range, so that a device can bear the pressure under 400MPa, the pressure-sensitive characteristic of a graphene piezoresistive junction is utilized to furthest extent, the sensitivity is further improved, the temperature borne by the device is improved to 300 ℃, for the prior art, the measurement advantage of the device under high temperature and high pressure is obvious, and the device can become a highly ideal high-temperature pressure sensor applied to dynamic and static high-temperature and high-pressure environments through the filtration of a piezoresistive junction bridge circuit.
Drawings
FIG. 1 is a schematic view of the external structure of the present invention;
FIG. 2 is a schematic view of the internal structure of the present invention;
FIG. 3 is a top view of a substrate of the present invention;
FIG. 4 is a schematic structural diagram of a graphene piezoresistive junction according to the present invention;
FIG. 5 is a cross-sectional view of a nano-film of the present invention;
FIG. 6 is a Wheatstone bridge diagram according to the invention;
in the figure: 1-packaging the housing; 2-convex column; 3-a membrane; 4-a substrate; 5-through silicon vias; 6-external interconnection electrode; 7-interconnect pads; 8-a silicon oxide protective layer; 9-a composite electrode; 10-graphene piezoresistive junctions; 11-a cross beam; 12-a nano-film; 13-a base; 14-a lead post; 15-boron nitride film; 16-graphene thin films.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-2, a graphene high-pressure sensor based on a cross beam structure includes:
the packaging structure comprises a packaging shell 1, wherein a mounting groove is formed in the bottom of the inner side of the packaging shell 1, a thread structure is arranged outside the packaging shell 1 and used for connecting an external mounting component, the packaging shell 1 can be in different shapes such as square, rectangle and circle, and is not particularly limited, and in the embodiment and the attached drawings, a cylindrical structure is taken as an example;
the diaphragm 3 is arranged at the top of the packaging shell 1, the diaphragm 3 can be connected to the packaging shell 1 through laser welding, and the diaphragm 3 seals the top of the packaging shell 1 to form an oxygen-free vacuum environment inside the packaging shell 1 so as to protect the internal structure;
the base 13 is arranged in the mounting groove, and the base 13 can be made of piezoelectric ceramic materials so that the device can be resistant to high-temperature and high-pressure environments of 100-300 ℃ and 100-400 MPa to the maximum extent;
the substrate 4 is arranged on the base 13, a square hole is formed in the center of the substrate 4, a cross beam is arranged on the square hole, and graphene piezoresistive junctions 10 are arranged at the connecting positions of the cross beam 11 and the substrate 4;
one end of the convex column 2 is connected to the bottom of the diaphragm 13, the other end of the convex column 2 is connected with the center of the cross beam 11, the convex column 2 is connected with the cross beam 11 through metal bonding, the convex column 2 is used for transmitting pressure applied to the diaphragm 3, and when the pressure is too high, the convex column 2 has the functions of buffering and protecting the internal structure of the chip.
As shown in fig. 2-3, the cross beam 11 is disposed on the square hole of the substrate 4 and located at the center of the square hole, four ends of the cross beam 11 are respectively connected to the inner walls of the square hole, and the upper surface of the cross beam 11 and the upper surface of the substrate 4 are located on the same horizontal plane. Compared with the traditional pressure sensor which adopts a C-shaped structure mostly and needs to thin the thickness of an elastic film for improving the sensitivity, the nonlinearity is increased, the cross beam structure can greatly reduce the central deflection, the nonlinearity error is reduced, and the sensitivity of the pressure sensor is improved.
As shown in fig. 2-5, the graphene piezoresistive junction 10 includes: the device comprises a nanometer film 12 and composite electrodes 9, wherein the two composite electrodes 9 are respectively electrically connected with two ends of the nanometer film 12, the nanometer film 12 is arranged on the upper surface of the cross beam 11, the nanometer film 12 is arranged close to the joint of the cross beam 11 and the substrate 4, and the composite electrodes 9 are arranged on the substrate 4 close to the nanometer film 12. The joint of the cross beam 11 and the substrate 4 is the place with the maximum surface stress on the cross beam 11, and the nano film 12 is arranged at the place, so that the sensitivity of the device can be greatly improved.
As shown in fig. 5, the nano-film 12 is composed of an upper layer of boron nitride film 15 and a lower layer of boron nitride film 15, and a graphene film 16 sandwiched between the two layers of boron nitride films 15, the graphene film 16 is of a serpentine bending structure, two ends of the graphene film 16 are respectively connected with the composite electrode 9, and since the nano-film 12 is disposed at a place where the surface stress on the cross beam 11 is maximum, the graphene film 16 accurately senses the strain of the cross beam 11, and the folding number of the graphene film 16 can be changed according to the measurement requirement.
As shown in fig. 2, through-silicon vias 5 (i.e., TSVs) are disposed on the substrate 4 near the composite electrodes 9, a plurality of interconnection pads 7 are disposed between the substrate 4 and the base 13, the interconnection pads 7 are disposed at the bottoms of the through-silicon vias 5, the composite electrodes 9 are electrically connected to the interconnection pads 7 through the through-silicon vias 5, gaps are formed between the substrate 4 and the base 13 by the interconnection pads 7, and the interconnection pads 7 serve as a wetting layer and a barrier layer to connect the through-silicon vias 5 and the lead posts 14, and are mainly used for preventing diffusion of gold atoms at high temperature.
As shown in fig. 2, the outer surface of the substrate 4 is provided with a silicon oxide protective layer 8, and the silicon oxide protective layer 8 is arranged on the outer surface of the substrate 4 as a silicon material mask for preventing the bonding metal material from leaking and protecting the substrate 4 from being damaged.
As shown in fig. 2, a plurality of mounting holes are formed in the base 13, lead posts 14 are disposed in the mounting holes, external interconnection electrodes 6 are disposed at bottom ends of the lead posts 14, one ends of the lead posts 14 are electrically connected to the interconnection pads 7 through wires, and an opening for exposing the external interconnection electrodes 6 is formed at the bottom of the package casing 1 for connecting with an external detection device, so as to transmit electrical signals generated by pressure changes of the graphene piezoresistive junctions 10 to the external detection device.
As shown in FIG. 6, the nano-film 12 is connected with an external resistor to form a half Wheatstone bridge, wherein the formula of the Wheatstone bridge is UOutput of＝UInput device*R1/(R1+R3)-UInput device*R4/(R2+R4) R in the formula1、R3Is the resistance value of the piezoresistive junction, R2、R4Is a constant resistance, R when the resistance and the pressure are zero1、R3Equal, when the pressure is zero, UOutput ofIs 0, R is1、R3The resistance value is increased, the decrement in the formula is increased, the decrement is reduced, and the testing precision is greatly improved.
As shown in fig. 1-2, the diaphragm 3 is a cylinder, a groove is arranged in the center of the top of the diaphragm 3, the cross section of the groove is in an inverted trapezoid shape, the groove can be formed by etching through a metal processing technology, and the center of the lower surface of the diaphragm 3 is connected with one end of the convex column 2.
In the invention, both the diaphragm 3 and the convex column 2 can be made of 316L stainless steel material, the substrate 4 can be made of Si material, and the packaging shell 1 can be made of 316L stainless steel material.
The metal bonding mode in the present invention includes, but is not limited to, Cu-Sn bonding, Au-Sn bonding, Cu-Cu bonding, or Au-Au bonding.
The working principle and the using process of the invention are as follows: when the sensor is used, external pressure acts on a diaphragm 3 to deform the diaphragm, the pressure is transmitted to a convex column 2, the convex column 2 displaces and acts on a cross beam 11, the cross beam 11 is vibrated to drive a graphene piezoresistive junction 10 to longitudinally deform, after a nano film 12 in the graphene piezoresistive junction 10 is uniformly loaded, the atomic distance between graphene and boron nitride changes, so that an energy gap is opened by an energy band of the graphene, the conductivity of the graphene is influenced, a Wheatstone bridge loses balance, an electrical signal is generated, and the pressure applied to the sensor can be obtained by detecting and calculating the electrical signal.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The utility model provides a graphite alkene high pressure sensor based on cross beam structure which characterized in that includes:
the packaging structure comprises a packaging shell (1), wherein a mounting groove is formed in the bottom of the inner side of the packaging shell (1);
a diaphragm (3), wherein the diaphragm (3) is arranged on the top of the packaging shell (1);
a base (13), the base (13) being disposed within the mounting slot;
the substrate (4) is arranged on the base (13), a square hole is formed in the center of the substrate (4), a cross beam is arranged on the square hole, and graphene piezoresistive junctions (10) are arranged at the connecting positions of the cross beam (11) and the substrate (4);
one end of the convex column (2) is connected to the bottom of the diaphragm (13), and the other end of the convex column (2) is connected with the center of the cross beam (11).
2. The crossbar-structure-based graphene high-pressure sensor according to claim 1, wherein the graphene piezoresistive junction (10) comprises: the device comprises a nano-film (12) and composite electrodes (9), wherein the two composite electrodes (9) are respectively electrically connected with two ends of the nano-film (12), the nano-film (12) is arranged on the upper surface of the cross beam (11), the nano-film (12) is arranged close to the joint of the cross beam (11) and the substrate (4), and the composite electrodes (9) are arranged on the substrate (4) and close to the nano-film (12).
3. The graphene high-pressure sensor based on the cross beam structure is characterized in that the nano thin film (12) is composed of an upper layer boron nitride thin film (15) and a lower layer boron nitride thin film (15) and a graphene thin film (16) sandwiched between the two layers boron nitride thin films (15), the graphene thin film (16) is of a serpentine bending structure, and two ends of the graphene thin film (16) are respectively connected with the composite electrode (9).
4. The graphene high-pressure sensor based on the cross beam structure as claimed in claim 2, wherein through silicon vias (5) are formed in the substrate (4) near the composite electrode (9), a plurality of interconnection pads (7) are disposed between the substrate (4) and the base (13), the interconnection pads (7) are disposed at the bottoms of the through silicon vias (5), and the composite electrode (9) is electrically connected with the interconnection pads (7) through the through silicon vias (5).
5. The graphene high-pressure sensor based on a cross-beam structure according to claim 4, wherein the interconnection pad (7) has a gap between the substrate (4) and the base (13).
6. The graphene high-pressure sensor based on a cross beam structure according to claim 1, wherein the outer surface of the substrate (4) is provided with a silicon oxide protective layer (8).
7. The graphene high-pressure sensor based on the cross beam structure as claimed in claim 5, wherein a plurality of mounting holes are formed in the base (13), lead posts (14) are disposed in the mounting holes, external interconnection electrodes (6) are disposed at bottom ends of the lead posts (14), one ends of the lead posts (14) are electrically connected with the interconnection pads (7) through wires, and an opening for exposing the external interconnection electrodes (6) is formed at the bottom of the package housing (1) for connecting with an external detection device.
8. The graphene high-pressure sensor based on the cross beam structure as claimed in claim 2, wherein the nano thin film (12) is connected with an external resistor to form a half Wheatstone bridge, wherein the formula of the Wheatstone bridge is UOutput of＝UInput device*R1/(R1+R3)-UInput device*R4/(R2+R4) R in the formula1、R3Is the resistance value of the piezoresistive junction, R2、R4Is electricity with constant resistanceAnd (4) blocking.
9. The graphene high-pressure sensor based on the cross beam structure is characterized in that the diaphragm (3) is a cylinder, a groove is arranged in the center of the top of the diaphragm (3), and the cross section of the groove is in an inverted trapezoid shape.
10. The graphene high-pressure sensor based on the cross beam structure is characterized in that a thread structure is arranged outside the packaging shell (1) and used for connecting an external mounting component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010240198.6A CN111337185A (en) | 2020-03-31 | 2020-03-31 | Graphene high-pressure sensor based on cross beam structure |
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| CN202010240198.6A CN111337185A (en) | 2020-03-31 | 2020-03-31 | Graphene high-pressure sensor based on cross beam structure |
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| CN111337185A true CN111337185A (en) | 2020-06-26 |
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| CN202010240198.6A Pending CN111337185A (en) | 2020-03-31 | 2020-03-31 | Graphene high-pressure sensor based on cross beam structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115112274A (en) * | 2022-06-28 | 2022-09-27 | 常州大学 | Pressure sensor based on serpentine graphene piezoresistor and design method thereof |
| CN117889998A (en) * | 2024-03-13 | 2024-04-16 | 成都凯天电子股份有限公司 | Sensor chip with stress amplifying structure and preparation method |
-
2020
- 2020-03-31 CN CN202010240198.6A patent/CN111337185A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115112274A (en) * | 2022-06-28 | 2022-09-27 | 常州大学 | Pressure sensor based on serpentine graphene piezoresistor and design method thereof |
| CN115112274B (en) * | 2022-06-28 | 2023-05-30 | 常州大学 | Pressure sensor based on serpentine graphene piezoresistor and design method thereof |
| CN117889998A (en) * | 2024-03-13 | 2024-04-16 | 成都凯天电子股份有限公司 | Sensor chip with stress amplifying structure and preparation method |
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