CN111366289A

CN111366289A - Cross beam structure graphite alkene high temperature pressure sensor

Info

Publication number: CN111366289A
Application number: CN202010240197.1A
Authority: CN
Inventors: 王俊强; 李孟委; 朱泽华
Original assignee: North University of China
Current assignee: North University of China
Priority date: 2020-03-31
Filing date: 2020-03-31
Publication date: 2020-07-03

Abstract

A cross beam structure graphite alkene high temperature pressure sensor, can work for a long time stably under the high temperature high pressure environment of 900 ℃ and 20MPa, the sensor includes: the packaging structure comprises a packaging shell, an upper end cover arranged at the top of the packaging shell and a ceramic base arranged at the bottom end in the packaging shell; the upper end cover is provided with a round through hole; the middle part of the ceramic base is provided with an installation groove; the detection substrate is arranged in the mounting groove of the ceramic base, a square hole is formed in the center of the detection substrate, a cross beam is arranged on the square hole, and nano detection units are arranged at the joints of the cross beam and the detection substrate; the pressure transmission silicon film is arranged on the detection substrate, the edge of the upper surface of the pressure transmission silicon film is connected with the bottom of the upper end cover, and a protruded silicon film convex column is arranged in the center of the bottom of the pressure transmission silicon film and connected with the center of the cross beam to realize force transmission; and one end of the interconnection component is connected with the nanometer detection unit, and the other end of the interconnection component is connected with the outside so as to transmit the pressure signal.

Description

Cross beam structure graphite alkene high temperature pressure sensor

Technical Field

The invention relates to the technical field of high-temperature and high-pressure tests, in particular to a graphene high-temperature pressure sensor with a cross beam structure.

Background

The high-temperature pressure sensor is mainly used for measuring the pressure of high-temperature and high-pressure areas in equipment such as aerospace engines, nuclear power units, oil exploration and the like. The existing silicon pressure sensor has high sensitivity and good precision; however, the temperature characteristics are poor, the stability in a high-temperature environment is low, the Pressure measurement in a high-temperature and high-Pressure area of some equipment cannot be met, in addition, due to the technical problems of packaging and the like, the Pressure Sensor manufactured by adopting the Graphene at present is mainly used for Graphene-Paper-based Pressure sensors (Graphene-Paper Pressure sensors for Detecting Human motion) designed by Qinghua university under the normal-temperature and low-Pressure environment, the measuring range is 0-20 KPa, and the measurement of the wrist, speaking, breathing and motion states can be realized.

Due to the high temperature resistance of the graphene and the boron nitride, the nano silver solder can bear the high temperature of 900 ℃, and the shearing strength of a device welded by the nano silver can reach 50 MPa. Therefore, the high-temperature-resistant pressure sensor with high integration level and strong stability can be designed by utilizing the graphene boron nitride material. The graphene high-temperature pressure sensor with the cross beam structure can realize full-scale pressure detection of pressure of 20MPa at high temperature of 900 ℃.

Disclosure of Invention

The invention designs a graphene high-temperature pressure sensor with a cross beam structure by utilizing graphene. The nano-film with the graphene layer is influenced by pressure to enable the cross beam to deform so that the conductivity of the cross beam is changed, and then the pressure is detected through detecting the change of the conductivity externally.

In order to achieve the purpose, the invention provides the following technical scheme:

a cross beam structure graphene high-temperature pressure sensor can stably work under high-temperature and high-pressure environments of 900 ℃ and 20MPa for a long time, and comprises:

the packaging structure comprises a packaging shell, an upper end cover arranged at the top of the packaging shell and a ceramic base arranged at the bottom end in the packaging shell;

a round through hole is formed in the upper end cover;

the middle part of the ceramic base is provided with an installation groove;

the detection substrate is arranged in the mounting groove of the ceramic base, a square hole is formed in the center of the detection substrate, a cross beam is arranged on the square hole, and nano detection units are arranged at the joints of the cross beam and the detection substrate;

the pressure transmission silicon film is arranged on the detection substrate, the edge of the upper surface of the pressure transmission silicon film is connected with the bottom of the upper end cover, and a protruded silicon film convex column is arranged in the center of the bottom of the pressure transmission silicon film and connected with the center of the cross beam to realize force transmission;

and one end of the interconnection component is connected with the nanometer detection unit, and the other end of the interconnection component is connected with the outside so as to transmit the pressure signal.

Optionally, the upper end cap is connected with the pressure transmitting silicon film through a first nano-silver connecting layer, and the first nano-silver connecting layer is arranged along the outer periphery of the circular through hole;

the pressure transmission silicon film is connected with the detection substrate through a second nano silver connecting layer and a third nano silver connecting layer, the second nano silver connecting layer is respectively arranged at the edge of the bottom of the pressure transmission silicon film and on the silicon film convex column, the third nano silver connecting layer is respectively arranged at the edge of the detection substrate and at the center of the cross beam, and the second nano silver connecting layer and the third nano silver connecting layer are mutually connected;

the detection substrate is connected with the ceramic base through a fourth nano-silver connecting layer, and the fourth nano-silver connecting layer is arranged at the edge of the bottom of the ceramic base;

and the outer side wall of the ceramic base is connected with the inner side surface of the packaging shell through a fifth nano silver connecting layer.

Optionally, the nano-detection unit includes: the nano-film, the metal electrode, the lower silicon oxide barrier layer, the upper silicon oxide barrier layer and the laminated metal.

Optionally, the nanomembrane is disposed on the upper surface of the cross beam, the nanomembrane is disposed near a connection portion of the cross beam and the detection substrate, the metal electrode is disposed on the detection substrate at a position near the nanomembrane, the two metal electrodes are electrically connected to two ends of the nanomembrane respectively, the metal electrode is used for leading out an electrical response in the nanomembrane, and the laminated metal is disposed on one side of the nanomembrane and presses one end of the nanomembrane.

Optionally, the lower silicon oxide barrier layer is disposed between the nanomembrane and the detection substrate, and the lower silicon oxide barrier layer is further disposed between the metal electrode and the detection substrate, and the lower silicon oxide barrier layer isolates the nanomembrane and the metal electrode from the detection substrate;

the upper silicon oxide barrier layer is arranged on the upper surface of the metal electrode.

Optionally, the nanomembrane comprises an upper boron nitride layer, a middle graphene layer, and a lower boron nitride layer, wherein the upper boron nitride layer, the middle graphene layer, and the lower boron nitride layer are sequentially disposed from top to bottom, and the middle graphene layer is a serpentine folded structure.

Optionally, the laminated metal is disposed on one side of the upper layer boron nitride layer, the middle layer graphene layer, and the lower layer boron nitride layer, and the laminated metal compresses the upper layer boron nitride layer, the middle layer graphene layer, and the lower layer boron nitride layer on the lower layer silicon oxide barrier layer.

Optionally, the interconnect assembly comprises: interconnection leads, interconnection pads, lead posts and external interconnection electrodes;

the interconnection lead, the interconnection pad, the lead post and the external interconnection electrode are sequentially connected, a mounting hole for mounting the lead post is formed in the ceramic base, the lead post is arranged in the mounting hole, the interconnection pad is arranged on the ceramic base and is connected with one end of the lead post, one end of the interconnection lead is connected with the metal electrode through an interconnection bump, and the other end of the interconnection lead is connected with the interconnection pad through an interconnection bump; and the bottom of the packaging shell is provided with an opening for accommodating the external interconnection electrode, the external interconnection electrode is arranged at the bottom of the ceramic base and is connected with the other end of the lead post, and the external interconnection electrode is connected with an external detection circuit.

The pressure sensor has the beneficial effects that the two-dimensional material graphene nano film is used as the load cell, so that the response speed of the pressure sensor is greatly improved. Meanwhile, the packaging shell, the end cover, the pressure transmission silicon film, the detection substrate and the base are connected through the nano silver connecting layer, so that the high-temperature tolerance, the air tightness and the reliability of the sensor are greatly improved, and the sensor can stably work at the high-temperature and high-pressure environment of 900 ℃ and 20MPa for a long time.

Drawings

FIG. 1 is an external structural view of an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention;

FIG. 3 is a top view of a nano-detection cell structure according to an embodiment of the present invention;

FIG. 4 is a top view of a pressure transmitting silicon film according to an embodiment of the present invention

FIG. 5 is a bottom view of a pressure transmitting silicon membrane according to an embodiment of the present invention

FIG. 6 is a bottom view of a test substrate configuration according to an embodiment of the present invention;

FIG. 7 is a top view of a test substrate structure according to an embodiment of the present invention;

FIG. 8 is a schematic cross-sectional view of a nanomembrane according to an embodiment of the present invention;

as shown in the figures, the list of reference numbers is as follows:

a pressure transmitting silicon film-1; a first nanosilver connectivity layer-2; a third nanosilver connectivity layer-3; a second nanosilver connectivity layer-4; silicon film convex column-5; a fourth nanosilver connectivity layer-6; a detection substrate-7; a cross beam-8; a ceramic base-9; an upper end cover-10; metal electrodes-11, 12, 37, 38, 56, 57, 74, 75; interconnect bumps-14, 15, 18, 19, 39, 40, 43, 44, 58, 59, 62, 63, 76, 77, 80, 81; lead interconnects-16, 17, 41, 42, 60, 61, 78, 79; interconnect pads-26, 27, 45, 46, 64, 65, 82, 83; lead posts-28, 29, 47, 48, 66, 67, 84, 85; a lower silicon oxide barrier layer-30; nanomembranes-31, 50, 68, 86; upper boron nitride layers-32, 51, 69, 87; middle graphene layers-33, 52, 70, 88; lower boron nitride layers-34, 53, 71, 89; laminate metals-35, 36, 54, 55, 72, 73, 90, 91; a package housing-37; an upper silicon oxide barrier layer-49; external interconnect electrodes-92, 93, 94, 95, 96, 97, 98, 99; round through hole-100.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, are not to be construed as limiting the present invention. In addition, in the description process of the embodiment of the present invention, the positional relationships of the devices such as "upper", "lower", "front", "rear", "left", "right", and the like in all the drawings are based on fig. 1.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

The invention is further described below with reference to the accompanying drawings:

as shown in fig. 1 and 2, an external perspective view of a first embodiment of the present invention provides a cross beam structure graphene high temperature pressure sensor, which can stably operate at 900 ℃ and 20MPa in high temperature and high pressure environment for a long time, and the sensor includes:

the packaging shell 37 is a cylinder, and the packaging shell 37 has a containing space inside for supporting and protecting the internal structure;

the upper end cover 10, the upper end cover 10 is arranged at the top end of the package shell 37, a circular through hole 100 is arranged on the upper end cover 10, the circular through hole 100 is used for pressure transmission so that pressure can be transmitted to the interior of the package shell 37, and the material of the upper end cover 10 can be stainless steel;

the ceramic base 9 is arranged at the bottom end inside the packaging shell 37, an installation groove is formed in the middle of the ceramic base 9, and the upper end cover 10, the pressure transmission silicon film 1, the ceramic base 9 and the packaging shell 37 jointly define an internal detection space to support and protect internal elements;

the detection substrate 7 is arranged in the mounting groove of the ceramic base 9, a square hole is formed in the center of the detection substrate 7, a cross beam 8 is arranged on the square hole, and nano detection units are arranged at the joints of the cross beam 8 and the detection substrate 7;

the pressure transmission silicon film 1 is arranged on the detection substrate 7, the edge of the upper surface of the pressure transmission silicon film 1 is connected with the bottom of the upper end cover 10, and a protruded silicon film convex column 5 is arranged in the center of the bottom of the pressure transmission silicon film 1 and connected with the center of the cross beam 8, so that force transmission is realized;

The packaging shell 37, the upper end cover 10, the ceramic base 9, the detection substrate 7 and the pressure transmission silicon film 1 are fixedly connected through a nano silver connecting layer, and specifically:

as shown in fig. 2 and 4, the upper cap 10 and the pressure transmitting silicon film 1 are connected by a first nano silver connection layer 2, and in this embodiment, the first nano silver connection layer 2 is disposed along an outer peripheral side of the circular through hole 100. The first nano silver connecting layer 2 is connected so that the upper end cap 10 and the pressure transmitting silicon film 1 are fixedly connected together.

As shown in fig. 2, 3 and 5, the pressure transmitting silicon film 1 and the detection substrate 7 are connected through a second nano silver connection layer 4 and a third nano silver connection layer 3, in this embodiment, the second nano silver connection layer 4 is respectively disposed at the edge of the bottom of the pressure transmitting silicon film 1 and on the silicon film convex column 5, the third nano silver connection layer 3 is respectively disposed at the edge of the detection substrate 7 and at the center of the cross beam 8, and the second nano silver connection layer 4 and the third nano silver connection layer 3 are connected with each other so that the bottom of the pressure transmitting silicon film 1 and the detection substrate 7 are fixedly connected together.

As shown in fig. 2 and 6, the detection substrate 7 and the ceramic base 9 are connected through a fourth nanosilver connection layer 6, and in this embodiment, the fourth nanosilver connection layer 6 is disposed at the edge of the bottom of the ceramic base 9. The fourth nano silver connecting layer 6 is connected, so that the detection substrate 7 and the ceramic base 9 are fixedly connected together, and firm support is provided for the detection substrate 7.

As shown in fig. 2, the outer sidewall of the ceramic base 9 is connected to the inner surface of the package housing 37 through a fifth nanosilver connection layer (not shown), so that the ceramic base 9 and the package housing 37 are fixedly connected together.

Through adopting the nano-silver articulamentum to connect, greatly improved the holistic high temperature resistance of sensor and reliability, optionally, the nano-silver articulamentum adopts the welded mode to connect adjacent structure fixedly.

As shown in fig. 2, 3, 7, and 8, the nano detection unit includes:

nanomembranes

31, 50, 68, 86,

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75, lower silicon oxide barrier layer 30, upper silicon oxide barrier layer 49, and

laminate metals

35, 36, 54, 55, 72, 73, 90, 91.

As shown in fig. 2, 3, 7, 8, the

nanomembrane

31, 50, 68, 86 is disposed on the upper surface of the cross beam 8, the

nanomembrane

31, 50, 68, 86 is disposed near the connection between the cross beam 8 and the detection substrate 7, the

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75 are disposed on the detection substrate 7 near the

nanomembrane

31, 50, 68, 86, two

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75 are electrically connected to the two ends of the

nanomembrane

31, 50, 68, 86 respectively, the

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75 are used to derive the electrical response in the

nanomembrane

31, 50, 68, 86, the

laminated metal

35, 36, 54, 55, 72, 73, 90, 91 is disposed on one side of the

nanomembrane

31, 50, 68, 86 and the

nano membrance

31, 50, 68, 86, 50. 68, 86 are compressed at one end.

As shown in fig. 8, the lower silicon oxide barrier layer 30 is disposed between the

nanomembrane

31, 50, 68, 86 and the sensing substrate 7, the lower silicon oxide barrier layer 30 is further disposed between the

metal electrode

11, 12, 37, 38, 56, 57, 74, 75 and the sensing substrate 7, and the lower silicon oxide barrier layer 30 isolates the

nanomembrane

31, 50, 68, 86 and the

metal electrode

11, 12, 37, 38, 56, 57, 74, 75 from the sensing substrate 7. The underlying silicon oxide barrier layer 30 acts as a wetting layer and a protective layer to isolate the

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75 and

nanomembranes

31, 50, 68, 86 from the detection substrate 7, preventing interdiffusion of atoms at high temperatures.

As shown in fig. 8, the upper silicon oxide barrier layer 49 is disposed on the upper surface of the

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75, and prevents the

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75 from being shorted with the third nanosilver connection layer 3 disposed on the detection substrate 7.

The connection part of the cross beam 8 and the substrate 4 is the place with the maximum surface stress on the cross beam 8, the

nanometer films

31, 50, 68 and 86 are arranged at the place, the sensitivity of the device can be greatly improved, and the detection accuracy is greatly improved due to the four

nanometer films

31, 50, 68 and 86.

As shown in fig. 7 and 8, the

nanomembrane

31, 50, 68, and 86 is composed of an upper boron nitride layer 32, 51, 69, and 87, a middle graphene layer 33, 52, 70, 88, and a lower boron nitride layer 34, 53, 71, and 89, wherein the upper boron nitride layer 32, 51, 69, and 87, the middle graphene layer 33, 52, 70, and 88, and the lower boron nitride layer 34, 53, 71, and 89 are sequentially disposed from top to bottom, and the middle graphene layer 33, 52, 70, and 88 has a serpentine folded structure. The sensitivity of the middle graphene layers 33, 52, 70, and 88 adopting the folded structure is high, and the number of the folded strips of the middle graphene layers 33, 52, 70, and 88 is not limited to the number shown in this embodiment, and may be other numbers without specific limitation. In other embodiments, the number of the upper boron nitride layers 32, 51, 69, 87 and the lower boron nitride layers 34, 53, 71, 89 is greater than or equal to 1, and the middle graphene layers 33, 52, 70, 88 are single-layer structures.

As shown in fig. 8, the

metal laminate

35, 36, 54, 55, 72, 73, 90, 91 is disposed on one side of the upper boron nitride layer 32, 51, 69, 87, the middle graphene layer 33, 52, 70, 88 and the lower boron nitride layer 34, 53, 71, 89, and the

metal laminate

35, 36, 54, 55, 72, 73, 90, 91 presses the upper boron nitride layer 32, 51, 69, 87, the middle graphene layer 33, 52, 70, 88 and the lower boron nitride layer 34, 53, 71, 89 against the lower silicon oxide barrier layer 30 to improve the adhesion of the

nanomembrane

31, 50, 68, 86, prevent the

nanomembrane

31, 50, 68, 86 from falling off due to too much pressure, and improve reliability.

In the present invention, the pressure is transmitted to the cross beam 8 of the detection substrate through the pressure transmitting silicon film 1, so that the middle graphene layers 33, 52, 70, 88 of the

nanomembranes

31, 50, 68, 86 are sensitive to the external pressure change.

As shown in fig. 2 and 3, the interconnect assembly includes: interconnect leads 16, 17, 41, 42, 60, 61, 78, 79,

interconnect pads

26, 27, 45, 46, 64, 65, 82, 83, lead posts 28, 29, 47, 48, 66, 67, 84, 85, and

external interconnect electrodes

92, 93, 94, 95, 96, 97, 98, 99. The interconnection leads 16, 17, 41, 42, 60, 61, 78, 79, the

interconnection pads

26, 27, 45, 46, 64, 65, 82, 83, the lead posts 28, 29, 47, 48, 66, 67, 84, 85, and the

external interconnection electrodes

92, 93, 94, 95, 96, 97, 98, 99 are connected in sequence. The ceramic base 9 is provided with mounting holes for mounting the lead posts 28, 29, 47, 48, 66, 67, 84, 85, the lead posts 28, 29, 47, 48, 66, 67, 84, 85 are arranged in the mounting holes, the interconnection pads 26, 27, 45, 46, 64, 65, 82, 83 are arranged on the ceramic base 9 and connected with one ends of the lead posts 28, 29, 47, 48, 66, 67, 84, 85, one ends of the interconnection leads 16, 17, 41, 42, 60, 61, 78, 79 are connected with the metal electrodes 11, 12, 37, 38, 56, 57, 74, 75 through interconnection bumps 14, 15, 39, 40, 58, 59, 76, 77, and the other ends of the interconnection leads 16, 17, 41, 42, 60, 61, 78, 79 are connected with the interconnection pads 26, 27, 45, 46, 64, 65, 82 through interconnection bumps 18, 19, 43, 44, 62, 63, 80, 81, 83 are connected; the bottom of the package shell 37 is provided with openings for accommodating the external interconnection electrodes 92, 93, 94, 95, 96, 97, 98, 99, the external interconnection electrodes 92, 93, 94, 95, 96, 97, 98, 99 are arranged at the bottom of the ceramic base 9 and connected with the other ends of the lead posts 28, 29, 47, 48, 66, 67, 84, 85, and the external interconnection electrodes 92, 93, 94, 95, 96, 97, 98, 99 are connected with an external detection circuit. The external detection circuit may be a component of the prior art that constitutes a complete sensor structure.

The interconnection leads 16, 17, 41, 42, 60, 61, 78 and 79 can be formed by bonding Au wires, and a combination mode of lead interconnection and lead posts is adopted, so that the high-temperature tolerance of the sensor is greatly improved, the thermal failure of copper TSV interconnection at high temperature is avoided, and the sensor can work at high temperature more conveniently.

The

nano films

31, 50, 68 and 86 on the cross beam 8 of the detection substrate 7 are connected by the pressure transmitting silicon film 1 through nano silver welding, the back of the detection substrate 7 is welded with the ceramic base through nano silver solder, and then stainless steel is used for packaging, so that the integrated level is high, and the reliability is high.

In the invention, the material of the detection substrate 7 can be Si material, and the ceramic base 9 can be Al₂O₃The ceramic material, the

metal electrodes

11, 12, 37, 38, 56, 57, 74, 75 and the external interconnection electrode may be selected from copper materials.

When external pressure acts on the upper surface of the upper end cover of the sensor, the pressure can be transmitted to the upper surface of the pressure transmission silicon film through the circular through hole of the upper end cover of the upper layer, so that the pressure transmission silicon film generates deformation displacement, the pressure is transmitted to the cross beam of the detection substrate through the silicon film convex column in the center of the back surface of the silicon film, the cross beam of the detection substrate also deforms, the graphene layer arranged on the nano film on the upper surface of the cross beam deforms to change the conductivity of the graphene on the middle layer, and the externally applied pressure can be measured by detecting the conductivity change of the graphene nano film.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims

1. The utility model provides a cross beam structure graphite alkene high temperature pressure sensor, can stable work for a long time under the high temperature high pressure environment of 900 ℃ and 20MPa, its characterized in that, the sensor includes:

the packaging structure comprises a packaging shell (37), an upper end cover (10) arranged at the top of the packaging shell (37) and a ceramic base (9) arranged at the bottom end inside the packaging shell (37);

the upper end cover (10) is provided with a round through hole (100);

the middle part of the ceramic base (9) is provided with an installation groove;

the detection substrate (7) is arranged in the mounting groove of the ceramic base (9), a square hole is formed in the center of the detection substrate (7), a cross beam (8) is arranged on the square hole, and nano detection units are arranged at the connection positions of the cross beam (8) and the detection substrate (7);

the pressure transmitting silicon film (1) is arranged on the detection substrate (7), the edge of the upper surface of the pressure transmitting silicon film (1) is connected with the bottom of the upper end cover (10), and a protruded silicon film convex column (5) is arranged at the center of the bottom of the pressure transmitting silicon film (1) and connected with the center of the cross beam (8) to realize force transmission;

2. The cross-beam structure graphene high-temperature pressure sensor according to claim 1, wherein the upper end cap (10) and the pressure transmitting silicon film (1) are connected through a first nano silver connection layer (2), and the first nano silver connection layer (2) is arranged along the outer periphery of the circular through hole (100);

the pressure transmission silicon film (1) is connected with the detection substrate (7) through a second nano silver connecting layer (4) and a third nano silver connecting layer (3), the second nano silver connecting layer (4) is respectively arranged at the edge of the bottom of the pressure transmission silicon film (1) and on the silicon film convex column (5), the third nano silver connecting layer (3) is respectively arranged at the edge of the detection substrate (7) and at the center of the cross beam (8), and the second nano silver connecting layer (4) and the third nano silver connecting layer (3) are connected with each other;

the detection substrate (7) is connected with the ceramic base (9) through a fourth nano silver connecting layer (6), and the fourth nano silver connecting layer (6) is arranged at the edge of the bottom of the ceramic base (9);

the outer side wall side of the ceramic base (9) is connected with the inner side surface of the packaging shell (37) through a fifth nano silver connecting layer.

3. The cross-beam graphene high-temperature pressure sensor according to claim 1, wherein the nano detection unit includes: a nanomembrane (31, 50, 68, 86), a metal electrode (11, 12, 37, 38, 56, 57, 74, 75), a lower silicon oxide barrier layer (30), an upper silicon oxide barrier layer (49), and a laminate metal (35, 36, 54, 55, 72, 73, 90, 91).

4. The cross-beam structure graphene high-temperature pressure sensor according to claim 3, wherein the nanomembrane (31, 50, 68, 86) is disposed on the upper surface of the cross beam (8), the nanomembrane (31, 50, 68, 86) is disposed near the connection of the cross beam (8) and the detection substrate (7), the metal electrodes (11, 12, 37, 38, 56, 57, 74, 75) are disposed on the detection substrate (7) near the nanomembrane (31, 50, 68, 86), the two metal electrodes (11, 12, 37, 38, 56, 57, 74, 75) are respectively electrically connected to the two ends of the nanomembrane (31, 50, 68, 86), the metal electrodes (11, 12, 37, 38, 56, 57, 74, 75) are used for deriving the electrical response in the nanomembrane (31, 50, 68, 86), the laminated metal (35, 36, 54, 55, 72, 73, 90, 91) is arranged on one side of the nano film (31, 50, 68, 86) and presses one end of the nano film (31, 50, 68, 86).

5. The crossbeam graphene high-temperature pressure sensor according to claim 3, wherein the lower silicon oxide barrier layer (30) is arranged between the nanomembrane (31, 50, 68, 86) and the detection substrate (7), the lower silicon oxide barrier layer (30) is further arranged between the metal electrode (11, 12, 37, 38, 56, 57, 74, 75) and the detection substrate (7), and the lower silicon oxide barrier layer (30) isolates the nanomembrane (31, 50, 68, 86) and the metal electrode (11, 12, 37, 38, 56, 57, 74, 75) from the detection substrate (7);

the upper silicon oxide barrier layer (49) is disposed on an upper surface of the metal electrode (11, 12, 37, 38, 56, 57, 74, 75).

6. The cross-beam graphene high-temperature pressure sensor according to claim 3, wherein the nanomembrane (31, 50, 68, 86) is composed of an upper boron nitride layer (32, 51, 69, 87), a middle graphene layer (33, 52, 70, 88), and a lower boron nitride layer (34, 53, 71, 89), the upper boron nitride layer (32, 51, 69, 87), the middle graphene layer (33, 52, 70, 88), and the lower boron nitride layer (34, 53, 71, 89) are sequentially disposed from top to bottom, and the middle graphene layer (33, 52, 70, 88) is a serpentine folded-back structure.

7. The cross-beam graphene high-temperature pressure sensor according to claim 6, wherein the lamination metal (35, 36, 54, 55, 72, 73, 90, 91) is disposed on one side of the upper boron nitride layer (32, 51, 69, 87), the middle graphene layer (33, 52, 70, 88) and the lower boron nitride layer (34, 53, 71, 89), and the lamination metal (35, 36, 54, 55, 72, 73, 90, 91) compresses the upper boron nitride layer (32, 51, 69, 87), the middle graphene layer (33, 52, 70, 88) and the lower boron nitride layer (34, 53, 71, 89) on the lower silicon oxide barrier layer (30).

8. The cross-beam structure graphene high temperature pressure sensor of claim 3, wherein the interconnect assembly comprises: interconnect leads (16, 17, 41, 42, 60, 61, 78, 79), interconnect pads (26, 27, 45, 46, 64, 65, 82, 83), lead posts (28, 29, 47, 48, 66, 67, 84, 85), and external interconnect electrodes (92, 93, 94, 95, 96, 97, 98, 99);

the interconnection lead (16, 17, 41, 42, 60, 61, 78, 79), the interconnection pad (26, 27, 45, 46, 64, 65, 82, 83), the lead post (28, 29, 47, 48, 66, 67, 84, 85) and the external interconnection electrode (92, 93, 94, 95, 96, 97, 98, 99) are connected in sequence, the ceramic base (9) is provided with a mounting hole for mounting the lead post (28, 29, 47, 48, 66, 67, 84, 85), the lead post (28, 29, 47, 48, 66, 67, 84, 85) is arranged in the mounting hole, the interconnection pad (26, 27, 45, 46, 64, 65, 82, 83) is arranged on the ceramic base (9) and connected with one end of the lead post (28, 29, 47, 48, 66, 67, 84, 85), and one end of the interconnection lead (16, 17, 41, 42, 60, 61, 78, 79) passes through the interconnection pad (14), 15. 39, 40, 58, 59, 76, 77) are connected with the metal electrodes (11, 12, 37, 38, 56, 57, 74, 75), and the other ends of the interconnection leads (16, 17, 41, 42, 60, 61, 78, 79) are connected with the interconnection pads (26, 27, 45, 46, 64, 65, 82, 83) through interconnection bumps (18, 19, 43, 44, 62, 63, 80, 81); the bottom of the packaging shell (37) is provided with an opening for accommodating the external interconnection electrodes (92, 93, 94, 95, 96, 97, 98, 99), the external interconnection electrodes (92, 93, 94, 95, 96, 97, 98, 99) are arranged at the bottom of the ceramic base (9) and are connected with the other ends of the lead posts (28, 29, 47, 48, 66, 67, 84, 85), and the external interconnection electrodes (92, 93, 94, 95, 96, 97, 98, 99) are connected with an external detection circuit.