CN116105881A - Temperature sensor and temperature detection method - Google Patents
Temperature sensor and temperature detection method Download PDFInfo
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- CN116105881A CN116105881A CN202211567655.8A CN202211567655A CN116105881A CN 116105881 A CN116105881 A CN 116105881A CN 202211567655 A CN202211567655 A CN 202211567655A CN 116105881 A CN116105881 A CN 116105881A
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- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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Abstract
The invention belongs to the field of sensors, and discloses a temperature sensor and a temperature detection method, wherein the temperature sensor comprises a first substrate and a second substrate; a plurality of first electrodes are arranged on one side of the first substrate, and a plurality of second electrodes are arranged on one side of the second substrate; a plurality of temperature sensitive groups are arranged between the first substrate and the second substrate, and each temperature sensitive group comprises a P-type temperature sensitive semiconductor thermoelectric material unit and an N-type temperature sensitive semiconductor thermoelectric material unit; the first electrodes, the second electrodes and the temperature sensitive groups are repeatedly connected in series in sequence to form a temperature sensing unit. The double-sided temperature test is realized through the single temperature sensor, compared with the existing temperature sensor which needs the multi-channel circuit integration to test the double-sided temperature, the temperature sensor integration level is greatly improved, and the application scene of the temperature sensor is widened.
Description
Technical Field
The invention belongs to the field of sensors, and relates to a temperature sensor and a temperature detection method.
Background
The intelligent development of the Internet of things brings new demands for the functionalization and integration of sensors, and the temperature is taken as an important parameter in the fields of consumer electronics, automobile home and industry and agriculture, so that the intelligent development of the Internet of things has important significance for the operation safety of equipment and the real-time perception of the change of environment. Meanwhile, with the development of industries such as wearable equipment, touch perception of intelligent electronic skin, distributed passive internet of things and the like, the functionalized and integrated temperature sensor is focused by a plurality of expert students.
At present, in practical application scenes, the temperature of the inner surface and the outer surface of an interlayer, a cavity and the like is required to be monitored, however, the existing contact type temperature sensor, such as a thermistor, a thermocouple, an integrated circuit type temperature sensor and the like, generally needs a plurality of channels and the clamping of related equipment to monitor the temperature of the two surfaces, the temperature of the two surfaces is difficult to monitor, a battery or a system power supply is required to be adopted for supplying energy, the integration level is low, the function is single, and the contact type temperature sensor is not suitable for a temperature monitoring system of a dangerous complex area and a remote area of manual operation in the Internet of things.
Disclosure of Invention
The present invention is directed to overcoming the drawbacks of the prior art and providing a temperature sensor and a temperature detection method.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
in a first aspect of the present invention, a temperature sensor is provided, including a first substrate and a second substrate; a plurality of first electrodes are arranged on one side of the first substrate, and a plurality of second electrodes are arranged on one side of the second substrate; a plurality of temperature sensitive groups are arranged between the first substrate and the second substrate, and each temperature sensitive group comprises a P-type temperature sensitive semiconductor thermoelectric material unit and an N-type temperature sensitive semiconductor thermoelectric material unit; the first electrodes, the second electrodes and the temperature sensitive groups are repeatedly connected in series in sequence to form a temperature sensing unit.
Optionally, the materials of the P-type temperature-sensitive semiconductor thermoelectric material unit and the N-type temperature-sensitive semiconductor thermoelectric material unit include one or more of the following: bi (Bi) 2 Te 3 Base compound, ag 2 S-based compound, ag 2 Se-based compound, ag 2 Te-based compound, snSe-based compound, mgAgSb-based compound and Mg 3 Sb 2 Base compounds, copper GeTe base compounds, pbTe base compounds, chalcogenides, skutterudite compounds, PEDOT: PSS complexes, PANI complexes, siGe compounds, and Half-Heusler compounds; the materials of the first substrate and the second substrate are rigid heat conduction materials, flexible materials, insulating heat conduction films or insulating heat conduction coating materials; the materials of the first electrode and the second electrode are rigid metal materials, flexible metal materials or graphite.
Optionally, a heat insulation packaging layer is arranged between the first substrate and the second substrate; the two ends of the heat insulation packaging layer are respectively connected with the first substrate and the second substrate, and the heat insulation packaging layer fills gaps among the temperature sensitive groups or is arranged around the temperature sensitive group array formed by a plurality of temperature sensitive groups.
Optionally, the first electrode and the second electrode are both provided with circuit connection layers, and the first electrode and the second electrode are both connected with the P-type temperature-sensitive semiconductor thermoelectric material unit and the N-type temperature-sensitive semiconductor thermoelectric material unit through the circuit connection layers.
Optionally, the two ends of the N-type temperature-sensitive semiconductor thermoelectric material unit and the P-type temperature-sensitive semiconductor thermoelectric material unit are both provided with metal transition layers, and the N-type temperature-sensitive semiconductor thermoelectric material unit and the P-type temperature-sensitive semiconductor thermoelectric material unit are both connected with the circuit connection layer through the metal transition layers.
Optionally, a contact layer for reducing contact thermal resistance between the first substrate and the second substrate and the surface to be tested is arranged on the other side of the first substrate and the other side of the second substrate.
Optionally, the device further comprises an internal resistance test circuit and a voltage acquisition circuit; the internal resistance test circuit and the voltage acquisition circuit are connected with the first electrodes at two ends of the temperature sensing unit; the internal resistance test circuit is used for obtaining the internal resistance value of the temperature sensor, and the voltage acquisition circuit is used for obtaining the open-circuit voltage of the temperature sensor.
Optionally, the system further comprises an acquisition/energy storage switching circuit, an energy management circuit and a wireless signal transmitting module; the voltage acquisition circuit and the energy management circuit are connected with the first electrodes at two ends of the temperature sensing unit through the acquisition/energy storage switching circuit; the wireless signal transmitting module is connected with the energy management circuit, the internal resistance test circuit and the voltage acquisition circuit; the wireless signal transmitting module is used for acquiring and transmitting the internal resistance value of the temperature sensor sent by the internal resistance testing circuit and acquiring and transmitting the open-circuit voltage of the temperature sensor sent by the voltage acquisition circuit.
According to a second aspect of the present invention, a temperature detection method based on the above temperature sensor includes: placing the first substrate in a first temperature measuring area, and placing the second substrate in a second temperature measuring area; acquiring an internal resistance value and an open-circuit voltage of a temperature sensor; and obtaining the temperature of the first temperature region to be measured and the temperature of the second temperature region to be measured according to the internal resistance value of the temperature sensor and the open-circuit voltage.
Optionally, the obtaining the temperature of the first area to be measured and the temperature of the second area to be measured according to the internal resistance value of the temperature sensor and the open circuit voltage includes: obtaining the temperature of the first region to be measured and the temperature of the second region to be measured according to the internal resistance value of the temperature sensor and the open-circuit voltage by the following formula:
T 1 ＝(R TEG -B)/α TEG +(V oc -A)/2S TEG
T 2 ＝(R TEG -B)/α TEG -(V oc -A)/2S TEG
wherein T is 1 For the temperature of the first region to be measured, R TEG The internal resistance value of the temperature sensor is A is a first linear correction constant, B is a second linear correction constant, alpha TEG Is the resistance temperature coefficient of the temperature sensor, V oc Is the open circuit voltage of the temperature sensor, S TEG Seebeck coefficient, T, for temperature sensor 2 Is the temperature of the first region to be measured.
Compared with the prior art, the invention has the following beneficial effects:
according to the temperature sensor, the temperature sensitive group is arranged between the first substrate and the second substrate, the temperature sensitive group can follow the change of different temperatures, the change of internal resistance and the change of output electric signals are realized, and further, the double-sided temperature measurement of the first substrate and the second substrate is realized based on the changed internal resistance and the output electric signals. And the temperature sensitive group is formed by connecting a P-type temperature sensitive semiconductor thermoelectric material unit and an N-type temperature sensitive semiconductor thermoelectric material unit in series, so that the output voltage is effectively ensured, and the temperature measurement precision of double-sided temperature measurement is further ensured. Meanwhile, the temperature sensor is simple in structure, easy to process and manufacture, free of additional maintenance work, low in manufacturing and using cost and long in service life.
Drawings
Fig. 1 is a schematic diagram of a temperature sensor according to a second embodiment of the present invention.
Fig. 2 is a temperature dependence graph of an open circuit voltage of a temperature sensor according to a second embodiment of the present invention.
Fig. 3 is a temperature dependence graph of the internal resistance of the temperature sensor according to the second embodiment of the present invention.
Fig. 4 is a graph showing comparison between the temperature sensor test temperature and the thermocouple test temperature according to the second embodiment of the present invention.
Fig. 5 is a temperature dependence graph of the open circuit voltage of the temperature sensor according to the third embodiment of the present invention.
Fig. 6 is a temperature dependence graph of the internal resistance of the temperature sensor according to the third embodiment of the present invention.
Fig. 7 is a schematic diagram illustrating a usage state of a temperature sensor according to a third embodiment of the present invention.
Fig. 8 is a temperature dependence graph of the open circuit voltage of the temperature sensor according to the fourth embodiment of the present invention.
Fig. 9 is a temperature dependence graph of the internal resistance of the temperature sensor according to the fourth embodiment of the present invention.
Fig. 10 is a schematic diagram of a usage state of a temperature sensor according to a fifth embodiment of the present invention.
Wherein: 11-a first substrate; 12-a second substrate; a 21-P type temperature sensitive semiconductor thermoelectric material unit; a 22-N type temperature sensitive semiconductor thermoelectric material unit; 31-a first electrode; 32-a second electrode; 4-an insulating encapsulation layer; 5-chip; 6-a high thermal conductivity member; 7-a heat dissipation shell layer; 8-chip temperature monitoring sensor; 9-a container; 10-an external circuit; 11-container monitoring temperature sensor.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As described in the background, the existing temperature sensor has the following disadvantages: 1. the system is mainly powered by a battery or a system power supply, needs to be maintained and replaced regularly, and is not suitable for temperature monitoring of dangerous and complicated areas and remote areas of manual operation in the Internet of things; 2. most of the surfaces to be measured are in point contact, and insufficient response signals caused by insufficient heat exchange exist; 3. the system integration level is low, for example, a thermistor type temperature sensor and an integrated circuit type temperature sensor have the problems of slower reaction, limited temperature measurement range, extremely poor linearity of a temperature dependence curve and the like, the temperature measurement accuracy depends on external calibration, and an additional power supply is required for driving; 4. the function is single, and it is difficult to monitor the temperature of the double surfaces, for example, real-time monitoring of the temperature of the inner wall and the outer wall of the spacecraft requires designing temperature sensor schemes of different temperature areas respectively, and considering a response circuit and a power supply scheme.
In view of the foregoing, there is a need to design and develop a temperature sensor with double-sided temperature measurement and environmental energy taking functions, so as to meet the requirements of the future emerging industry for a multifunctional temperature sensor.
The invention is described in further detail below with reference to the attached drawing figures:
example 1
In this embodiment, in order to improve the problems that the existing temperature sensor described above is difficult to monitor the temperature of the two surfaces at the same time, the integration level is low, the response rate is slow, etc., a temperature sensor is provided, specifically, a self-energy-taking temperature sensor suitable for detecting the temperature of the two surfaces can monitor the temperature changes of the two surfaces at the same time, collect environmental energy to convert the environmental energy into electric energy, and provide a new solution for temperature monitoring in the fields of passive internet of things, etc.
Specifically, the temperature sensor includes a first substrate 11 and a second substrate 12; a plurality of first electrodes 31 are arranged on one side of the first substrate 11, and a plurality of second electrodes 32 are arranged on one side of the second substrate 12; a plurality of temperature sensitive groups are arranged between the first substrate 11 and the second substrate 12, and each temperature sensitive group comprises a P-type temperature sensitive semiconductor thermoelectric material unit 21 and an N-type temperature sensitive semiconductor thermoelectric material unit 22; the first electrodes 31, the second electrodes 32, and the temperature sensitive groups are sequentially and sequentially connected in series by repeating the order of the first electrodes 31, the P-type temperature sensitive semiconductor thermoelectric material units 21, the second electrodes 32, and the N-type temperature sensitive semiconductor thermoelectric material units 22 to form a temperature sensing unit.
The first substrate 11 and the second substrate 12 are respectively connected with the temperature sensitive group through the first electrode 31 and the second electrode 32, and serve as a temperature collecting plane, a heat conduction plane and an electric insulation element of the temperature sensor, and when the temperature sensor is specifically used, the surfaces of the first substrate 11 and the second substrate 12 are attached to the surface to be measured or placed in the environment to be measured to collect the temperature.
The first electrode 31, the P-type temperature-sensitive semiconductor thermoelectric material unit 21, the second electrode 32 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22 are repeatedly connected in sequence to form a temperature sensing unit of the temperature sensor. The P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22 have a regular and repeatable resistance temperature dependence and voltage temperature difference dependence. The resistance temperature dependence comprises a linear relationship, a resolvable function relationship and the like, namely, the total resistance of the temperature sensitive group and the double-sided temperature of the temperature sensor have a linear resolvable function relationship, and the voltage temperature difference dependence is a linear resolvable function relationship between output voltage and temperature difference, namely, the Seebeck coefficient of the temperature sensitive group in a temperature measuring interval is stable and has small fluctuation.
Therefore, the temperature sensitive group can give internal resistance and electrical signal variation along with temperature variation, and thus is collected and derived through the first electrode 31 and the second electrode 32, and then the temperatures of the first substrate 11 and the second substrate 12 can be calculated by measuring the internal resistance value and the open circuit voltage of the temperature sensor and based on the internal resistance value and the open circuit voltage of the temperature sensor. Meanwhile, the electric signals output by the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22 along with the temperature change can also be used as energy supply, so that the environment self-energy taking function is realized, an energy supply power supply is not required to be additionally arranged, and the passive design of the temperature sensor is conveniently realized.
In summary, in the temperature sensor of the present invention, the temperature sensitive group is disposed between the first substrate 11 and the second substrate 12, so that the temperature sensitive group can follow the changes of different temperatures, thereby realizing the changes of internal resistance and the changes of output electrical signals, and further realizing the double-sided temperature measurement of the first substrate 11 and the second substrate 12 based on the changed internal resistance and the output electrical signals. And the temperature sensitive group is formed by connecting the P-type temperature sensitive semiconductor thermoelectric material unit 21 and the N-type temperature sensitive semiconductor thermoelectric material unit 22 in series, so that the output voltage is effectively ensured, and the temperature measurement precision of double-sided temperature measurement is further ensured. Meanwhile, the temperature sensor is simple in structure, easy to process and manufacture, free of additional maintenance work, low in manufacturing and using cost and long in service life.
In one possible embodiment, the temperature sensor may be designed in different shapes, such as a vertical type structure, a vertical type flexible structure, a film in-plane type structure, a film wave type structure, a film convolution type structure, a film folding type structure, and a single line type structure, in order to accommodate different temperature measuring environments.
Based on this, the structures of the first substrate 11 and the second substrate 12 may be made as a rigid plane, a flexible plane, a line profile, a dot shape, or the like, and at the same time, the materials of the first substrate 11 and the second substrate 12 may be selected as a rigid heat conductive material such as alumina, zirconia, or the like, a flexible material such as polyimide, polyvinyl alcohol film, mylar, or the like, an insulating heat conductive film, or an insulating heat conductive coating material, or the like.
In one possible embodiment, the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22 serve as main temperature sensing elements, and the more stable the regularity between Seebeck voltage and temperature difference of the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22 is under the requirement of ensuring measurement accuracy.
Optionally, the materials of the P-type temperature sensitive semiconductor thermoelectric material unit 21 and the N-type temperature sensitive semiconductor thermoelectric material unit 22 include one or more of the following: bi (Bi) 2 Te 3 Base compound, ag 2 S-based compound, ag 2 Se-based compound, ag 2 Te-based compound, snSe-based compound, mgAgSb-based compound and Mg 3 Sb 2 Base compounds, copper GeTe base compounds, pbTe base compounds, chalcogenides, skutterudite compounds, PEDOT: PSS complexes, PANI complexes, siGe compounds, and Half-Heusler compounds.
In one possible embodiment, the thermally insulating encapsulation layer 4 is arranged between the first substrate 11 and the second substrate 12; the two ends of the heat insulation packaging layer 4 are respectively connected with the first substrate 11 and the second substrate 12, and the heat insulation packaging layer 4 fills gaps among the temperature sensitive groups or is arranged around the temperature sensitive group array formed by a plurality of temperature sensitive groups.
Specifically, according to the actual service environment, the heat insulation packaging layer 4 can be arranged around the temperature sensitive unit or in the gap to stop the influence of the ambient temperature on the temperature sensitive unit, meanwhile, the influence of the wind speed, the heat radiation and other environmental factors on the temperature sensitive unit is reduced, the service performance of the temperature sensor is enhanced, the change of the temperature sensitive unit is based on the temperature collected by the first substrate 11 and the second substrate 12, and the measurement accuracy of the temperature sensor is ensured.
In one possible embodiment, a circuit connection layer is disposed on each of the first electrode 31 and the second electrode 32, and each of the first electrode 31 and the second electrode 32 is connected to the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22 through the circuit connection layer.
Specifically, the circuit connection layer is arranged to mainly enhance the connectivity among the first electrode 31, the second electrode 32, the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22, so that the stability of the overall structure of the temperature sensor is ensured. Generally, the circuit connection layer can be prepared by selecting a connection material which is stable in combination, high in thermal conductivity and low in contact resistance in the working temperature range of the temperature sensor.
In one possible implementation manner, the metal transition layers are disposed at two ends of the N-type temperature sensitive semiconductor thermoelectric material unit 22 and the P-type temperature sensitive semiconductor thermoelectric material unit 21, and the N-type temperature sensitive semiconductor thermoelectric material unit 22 and the P-type temperature sensitive semiconductor thermoelectric material unit 21 are connected to the circuit connection layer through the metal transition layers.
Specifically, the provision of the metal transition layer is also for enhancing the connectivity between the N-type temperature-sensitive semiconductor thermoelectric material unit 22 and the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the first electrode 31 and the second electrode 32, and also for blocking diffusion of elements in the circuit connection layer into the N-type temperature-sensitive semiconductor thermoelectric material unit 22 and the P-type temperature-sensitive semiconductor thermoelectric material unit 21, and for reducing contact resistance during the connection process.
In one possible embodiment, a contact layer for reducing contact thermal resistance between the first substrate 11 and the second substrate 12 and the surface to be measured is disposed on both the other side of the first substrate 11 and the other side of the second substrate 12.
Specifically, the contact layer is mainly used for reducing the contact thermal resistance between the first substrate 11 and the second substrate 12 and the surface to be measured, and generally can be prepared by selecting a material with high thermal conductivity and high adhesion.
In one possible implementation, the temperature sensor further includes an internal resistance test circuit and a voltage acquisition circuit; the internal resistance test circuit and the voltage acquisition circuit are connected with the first electrodes 31 at two ends of the temperature sensing unit; the internal resistance test circuit is used for obtaining the internal resistance value of the temperature sensor, and the voltage acquisition circuit is used for obtaining the open-circuit voltage of the temperature sensor.
Specifically, the internal resistance test circuit may adopt a conventional resistance test circuit, such as a huffman internal resistance test circuit, a bridge internal resistance test circuit, a voltage division internal resistance test circuit, and the like, and the internal resistance value of the entire temperature sensor is obtained by connecting two ends of the internal resistance test circuit with the first electrodes 31 at two ends of the temperature sensing unit. The voltage acquisition circuit can adopt an ADC acquisition circuit and the like, and the acquisition of the open-circuit voltage of the whole temperature sensor is realized by connecting the two ends of the voltage acquisition circuit with the first electrodes 31 at the two ends of the temperature sensing unit.
In one possible implementation, the temperature sensor further comprises an acquisition/energy storage switching circuit, an energy management circuit, and a wireless signal transmission module; the voltage acquisition circuit and the energy management circuit are connected with the first electrodes 31 at two ends of the temperature sensing unit through the acquisition/energy storage switching circuit; the wireless signal transmitting module is connected with the energy management circuit, the internal resistance test circuit and the voltage acquisition circuit; the wireless signal transmitting module is used for acquiring and transmitting the internal resistance value of the temperature sensor sent by the internal resistance testing circuit and acquiring and transmitting the open-circuit voltage of the temperature sensor sent by the voltage acquisition circuit.
Specifically, through collection/energy storage switching circuit and energy management circuit, realize temperature sensor from collection and the energy storage of getting the ability, simultaneously, through setting up wireless signal transmission module and realize the long-range collection and the transmission of signal, greatly promoted temperature sensor's range of application. And the wireless signal transmitting module is not required to be additionally provided with a power supply, so that support is provided for distributed passive intelligent temperature monitoring.
In summary, the temperature sensor of the present invention has the following characteristics: 1. the temperature sensor with rigidity, flexibility and film type can be prepared according to different substrate materials and temperature sensitive semiconductor thermoelectric materials, so as to realize temperature measurement of different heat source surfaces. 2. The accurate temperature measurement can be realized by depending on the relations between the open-circuit voltage and the temperature difference and between the internal resistance and the temperature, and an external resistor network is not needed. 3. Can realize double-sided temperature measurement, and can be suitable for application in various double-sided temperature measurement environments. 4. Energy can be taken from the environment, and continuous energy supply can be realized only by establishing a temperature difference between the first substrate 11 and the second substrate 12. Therefore, the temperature sensor can be suitable for monitoring the temperatures of various scenes such as the inner wall and the outer wall of a cavity, the inner and outer temperature of an intelligent automobile, the surface layer and the inner part of a spacecraft and the like in real time.
Based on the above temperature sensor, the embodiment also provides a temperature detection method, which includes the following steps: placing the first substrate 11 in a first temperature measurement region, and placing the second substrate 12 in a second temperature measurement region; acquiring an internal resistance value and an open-circuit voltage of a temperature sensor; and obtaining the temperature of the first temperature region to be measured and the temperature of the second temperature region to be measured according to the internal resistance value of the temperature sensor and the open-circuit voltage.
In one possible implementation manner, the obtaining the temperature of the first area to be measured and the temperature of the second area to be measured according to the internal resistance value of the temperature sensor and the open circuit voltage specifically includes:
obtaining the temperature of the first region to be measured and the temperature of the second region to be measured according to the internal resistance value of the temperature sensor and the open-circuit voltage by the following formula:
T 1 ＝(R TEG -B)/α TEG +(V oc -A)/2S TEG
T 2 ＝(R TEG -B)/α TEG -(V oc -A)/2S TEG
wherein T is 1 For the temperature of the first region to be measured, R TEG The internal resistance value of the temperature sensor is A is a first linear correction constant, B is a second linear correction constant, alpha TEG Is the resistance temperature coefficient of the temperature sensor, V oc Is the open circuit voltage of the temperature sensor, S TEG Seebeck coefficient, T, for temperature sensor 2 Is the temperature of the first region to be measured.
In particular, the open circuit voltage of the temperature sensor may be expressed as V oc ＝S TEG (T 1 -T 2 ) +A, where S TEG Integral Seebeck system of temperature sensorNumber, T 1 And T 2 The open circuit voltage of the temperature sensor is positively correlated with the temperature difference between the two ends of the first substrate 11 and the second substrate 12 for the temperatures of the surfaces of the first substrate 11 and the second substrate 12, namely the temperature of the first temperature region to be measured and the temperature of the second temperature region to be measured, and A is a first linear correction constant.
The internal resistance of the temperature sensor can be expressed as R TEG ＝n(ρ p /A p +ρ n /A n )L+R Overplating layer +R Connection layer Wherein n is the number of temperature sensitive groups, ρ p And ρ n Resistivity, A, of the P-type and N-type temperature-sensitive semiconductor thermoelectric material units 21 and 22, respectively p And A n The particle cross sections of the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22 are respectively, L is the particle length of the P-type temperature-sensitive semiconductor thermoelectric material unit 21 and the N-type temperature-sensitive semiconductor thermoelectric material unit 22, and R Overplating layer Resistance of metal transition layer, R Connection layer Is the resistance of the circuit connection layer.
Wherein the temperature sensitive group is the main source of the internal resistance of the sensor, the resistance of the metal transition layer is a tiny fixed value, the circuit connection layer is usually an intermetallic compound, and the resistivity can be expressed as rho=rho as known from Matthiessen's rule L +ρ I ＝1/n'eμ L +1/n'eμ I Wherein ρ is L And ρ I Resistivity, μ, limited by lattice scattering and impurity scattering, respectively L Sum mu I Carrier mobility limited by lattice scattering and impurity scattering respectively, n' is carrier concentration, e is electron charge quantity, metal atom thermal vibration is enhanced when temperature is increased, lattice scattering is enhanced to cause metal resistivity to be linearly increased, residual resistivity caused by impurities is insensitive to temperature, and according to Nordheim semi-empirical formula, resistance and temperature are in direct proportion relation, so that internal resistance of the temperature sensor can be expressed as R TEG ＝α TEG T avg +B＝α TEG (T 1 +T 2 ) /2+B, where α TEG Is the resistance temperature coefficient of the temperature sensor, T avg Is the average temperatureAnd B is a second linear correction constant.
Thus, the temperature sensor's double-surface temperature can be expressed as T by integrating the relationship between the voltage temperature differences and the resistance temperature 1 ＝(R TEG -B)/α TEG +(V oc -A)/2S TEG And T 2 ＝(R TEG -B)/α TEG -(V oc -A)/2S TEG 。
Specifically, before the temperature sensor is used, the voltage temperature difference curve and the resistance temperature dependence curve of the temperature sensor are calibrated at the same time, such as fixing the temperature T at one end of the temperature sensor 1 Changing the temperature T at the other end 2 And measuring the open-circuit voltage and the internal resistance of the temperature sensor under different temperature differences. Wherein the internal resistance of the temperature sensor can be represented by alternating current impedance to ensure the accuracy thereof. The calibration method can adopt corresponding high-precision temperature control platforms and other equipment according to the use precision requirement, can selectively use copper blocks to combine with temperature control methods of temperature measuring elements and the like to reduce errors in the calibration process, and needs to ensure the accuracy of the temperature measuring elements used in the calibration process.
Example two
Referring to fig. 1, in the present embodiment, a temperature sensor is provided, and the structure in the first embodiment is adopted, and the size is 4.7×4.9×1mm 3 Wherein the temperature sensitive group is based on Bi 2 Te 3 The thermoelectric material is made of a base thermoelectric material, and specifically, the P-type temperature-sensitive semiconductor thermoelectric material unit 21 adopts P-type Bi 0.5 Sb 1.5 Te 3 The N-type temperature-sensitive semiconductor thermoelectric material unit 22 adopts N-type Bi 2 Te 2.7 Se 0.3 The sizes are 0.4 x 0.4mm 3 . The first electrode 31 and the second electrode 32 are Cu electrodes, the solder is gold-tin solder, the circuit connecting layer is Ni, and the first substrate 11 and the second substrate 12 are Al 2 O 3 In this embodiment, the temperature sensor is packaged without the heat insulating package layer 4.
After the preparation is finished, a test platform capable of adjusting double-sided temperature is adopted for calibration, referring to fig. 2 and 3, a temperature dependence curve of open-circuit voltage and internal resistance of the temperature sensor is obtained, a copper block is adopted for combining with a calibrated temperature measuring element for accurately controlling the upper surface temperature and the lower surface temperature of a device in the calibration process, and a result shows that the open-circuit voltage and the temperature difference of the temperature sensor show a linear relationship in the process of repeated test for two times, and the resistor and the average temperature of the sensor show a linear relationship in the process of repeated test for two times, so that double-sided temperature detection can be realized.
The temperature sensor is placed between the surfaces to be tested, the tested double-surface temperature is obtained by detecting the open-circuit voltage and the internal resistance parameter, see fig. 4, and is compared with the thermocouple test temperature, the result error is within 1 ℃, and the surface temperature sensor has higher temperature test precision.
Example III
In this embodiment, a temperature sensor is provided, and the structure in embodiment one is adopted, and the size is 1.5×2.6×0.8mm 3 Wherein the temperature sensitive group is based on Bi 2 Te 3 Based on thermoelectric materials, in particular, wherein the temperature-sensitive group is based on Bi 2 Te 3 The thermoelectric material is made of a base thermoelectric material, and specifically, the P-type temperature-sensitive semiconductor thermoelectric material unit 21 adopts P-type Bi 0.5 Sb 1.5 Te 3 The N-type temperature-sensitive semiconductor thermoelectric material unit 22 adopts N-type Bi 2 Te 2.7 Se 0.3 The sizes are 0.28 x 0.28mm 3 . The first electrode 31 and the second electrode 32 are Cu electrodes, the solder is solid crystal solder, the circuit connecting layer is Ni, and the first substrate 11 and the second substrate 12 are Al 2 O 3 And the epoxy resin is used as the heat insulation packaging layer 4 for packaging, so that the external environment influence is isolated.
After the preparation is finished, a test platform with adjustable double-sided temperature is adopted for calibration, referring to fig. 5 and 6, a temperature dependence curve of open-circuit voltage and internal resistance of the temperature sensor is obtained, a copper block is adopted for combining with a calibrated temperature measuring element for precisely controlling the upper surface temperature and the lower surface temperature of a device in the calibration process, and the result shows that the open-circuit voltage of the temperature sensor has the same linear relation with the temperature difference, the internal resistance and the average temperature of the sensor, and the temperature sensor has the capability of double-sided temperature sensing.
Referring to fig. 7, the temperature sensor is used as a chip temperature monitoring sensor 8, the chip temperature monitoring sensor 8 is arranged between two layers of integrated chip circuit boards, so that the temperature detection of the chip 5 and the integrated circuit boards is realized, or one end of the chip temperature monitoring sensor 8 is connected with the chip 5, and a high heat conduction member 6 is used for connecting the other surface of the chip temperature monitoring sensor 8 with an external heat dissipation shell 7, so that the temperature of the chip 5 is monitored, and when the heat conduction capacity of the high heat conduction member 6 is strong, the upper surface temperature of the chip temperature monitoring sensor 8 is close to the temperature of the external heat dissipation shell 7, thereby achieving the effect of monitoring the environmental temperature.
Example IV
In this embodiment, a temperature sensor is provided, and the structure in embodiment one is adopted, and the size is 2×16×1.2mm 3 Wherein the temperature sensitive group is based on Bi 2 Te 3 Thermoelectric material and Ag 2 The Se-based thermoelectric material is specifically made of P-type Bi for the P-type temperature-sensitive semiconductor thermoelectric material unit 21 0.5 Sb 1.5 Te 3 The N-type temperature-sensitive semiconductor thermoelectric material unit 22 adopts N-type Ag 2 Se, the size of which is 0.4 x 0.8mm 3 . The first electrode 31 and the second electrode 32 are Ag electrodes, and the solder is a die-bonding solder.
After the preparation is finished, referring to fig. 8 and 9, a test platform capable of adjusting double-sided temperature is adopted for calibration, a temperature dependence curve of open-circuit voltage and internal resistance of the temperature sensor is obtained, a copper block is adopted for combining with a calibrated temperature measuring element for precisely controlling the upper surface temperature and the lower surface temperature of a device in the calibration process, one end temperature is controlled to be 0 ℃ during calibration, the other end is gradually increased to 80 ℃ from-20 ℃, and the result shows that the open-circuit voltage, the temperature difference, the internal resistance and the average temperature of the sensor of the temperature sensor are in the same linear relation, and the temperature sensor has the capability of double-sided temperature sensing.
The temperature sensor is arranged on the body surface of a human body, is fixed by adopting a heat-conducting adhesive material or colloid, can be tested to obtain the body temperature of the human body by detecting open-circuit voltage and internal resistance parameters, can be regarded as the ambient temperature when the ambient convection is strong, and can store part of output electric energy in an energy storage circuit for driving the wireless Bluetooth chip 5 to send a signal to a mobile terminal for analysis and treatment, and can display the body temperature and the ambient temperature on mobile equipment.
Example five
In this embodiment, a temperature sensor is provided, which adopts the structure of the first embodiment, wherein the temperature sensitive group is based on Cu 2 Se and CoSb 3 The base thermoelectric material is made and can be suitable for a use temperature region of 5000600 ℃. Specifically, the P-type temperature-sensitive semiconductor thermoelectric material unit 21 is cylindrical Cu with a height of 4mm and a diameter of 2mm 2 The Se, N-type temperature-sensitive semiconductor thermoelectric material unit 22 is cylindrical Yb with the height of 4mm and the diameter of 2mm 0.3 Co 4 Sb 12 The circuit connection layer adopts a Ni layer, a Mo layer and a Ni layer and Sn/Cu double-layer structure, the first electrode 31 and the second electrode 32 are both Cu electrodes, a shell layer is adopted to seal the temperature sensor, and inert gas is filled in the shell layer to prevent oxidation of materials.
The temperature dependence curve of the open-circuit voltage and the internal resistance of the temperature sensor is calibrated by using a high-temperature platform and a high-temperature thermocouple and is input into an external processing circuit connected with the temperature sensor, and the output electric energy of the temperature sensor is stored in a high-temperature capacitor/battery arranged outside the cold end and used for driving an external circuit.
Referring to fig. 10, the temperature sensor is used as a container monitoring temperature sensor 11 and is arranged in a heat storage container wall/heat transfer pipeline, the container monitoring temperature sensor 11 is embedded in a container 9, electric energy output by the container monitoring temperature sensor 11 and a tested temperature signal are transmitted to an external circuit 10, and acquired information is transmitted to a remote early warning end through a wireless signal transmitter, so that intelligent wireless high-temperature early warning can be realized.
Example six
In this embodiment, for the inner and outer wall scenes with higher temperature, such as above 700 ℃, such as rocket engine shells of aircrafts, nuclear reactor shells, isotope thermoelectric cells for spaceflight, and the like, because the outer wall of the inner and outer wall has strong convection or extremely low temperature conditions, the temperature difference between the inner and outer walls is too large, and a single-section temperature sensor needs multistage temperature sensing to monitor the temperature in a sectional manner in the long-term service process or in a short service time.
The temperature can be geometrically optimized according to the space sizeThe dimensions of the highly sensitive material, e.g. 20X 5cm, can be made of SiGe alloy, half-Heusler alloy, or the like 3 The electrode of the temperature sensor is SiMo alloy, and the outer substrate is SiO wound outside the electrode 2 The fiber is used for electric insulation of a temperature sensor, the temperature sensor is indirectly connected with the high temperature section by adopting modes of bolts, spring compression and the like, material sublimation caused by overhigh temperature is prevented, inert gas is filled in the fiber, and the CoSb in the fourth and fifth embodiments can be selected as the medium and low temperature end 3 The base compound, the PbTe base compound, the bismuth telluride base compound and the like are used as temperature sensitive semiconductor thermoelectric materials, and the two temperature sensors are connected by adopting a welding mode or an insulating heat conducting layer and the like.
After the preparation is finished, a high-temperature platform and an infrared temperature measuring element are used for calibrating a temperature dependence curve of an open-circuit voltage and a resistance value of the sectional temperature sensor, and a signal processing circuit with a wire contacting to a surface with a lower temperature is used for electric energy collection and signal processing. One end of a high-temperature section in the sectional type temperature sensor is connected to the high-temperature end, the other end of the sectional type temperature sensor is connected with the temperature sensor of the middle-temperature section, the other end of the temperature sensor of the middle-temperature section is connected with the low-temperature shell layer, and the data acquisition and wireless signal transmitting circuit is combined, so that the temperature change of a high-temperature heat source, the temperature change of the inside and the outside environment of the cavity can be acquired, transmitted and monitored in a distributed mode, and the integration level and the intellectualization of a system in a scene are improved.
Example seven
In this example, PEDOT PSS compound and Ag were used 2 Se film 20 x 100mm 3 Wherein the temperature sensitive semiconductor thermoelectric material is CNTs+PEDOT: PSS, the first electrode 31 and the second motor are both Au electrodes, and the materials of the first substrate 11 and the second substrate 12 are flexible polyimide.
The temperature dependence curve of the open-circuit voltage and the internal resistance of the temperature sensor is calibrated by controlling different temperature differences at two ends of the material of the film type temperature sensor, the Seebeck coefficient of the sensor basically keeps consistent in a working temperature region of the room temperature interval 0060 ℃, and the resistance shows regular change along with the temperature.
And inserting/clamping the temperature sensor on the surfaces of an intelligent automobile interlayer, a water cup or clothes fabric and the like, collecting the open-circuit voltage and the alternating-current resistance of the temperature sensor, and testing to obtain the temperatures of the two surfaces. Taking a water cup as an example, the hot end can be attached to a hot water area, the other end is attached to the upper end of the cup body, and the environment temperature and the hot water temperature are obtained through testing.
The film-type temperature sensor has high expansibility, and the PEDOT, PSS compound and Ag can be independently used in the embodiment 2 The Se film is prepared to form a single-section device, and the function of double-sided temperature monitoring can be realized. In addition, the temperature sensor may be folded or convolved to form a wave or three-dimensional vertical structure to increase the heat collecting surface of the temperature sensor. Meanwhile, the thin film can be deposited between two points of the integrated circuit, the temperature dependence curve of the open-circuit voltage and the internal resistance is calibrated by adopting the steps, and the monitoring function of the two-point temperature can be realized by matching with an external acquisition circuit. Based on the double-sided temperature measurement principle provided by the invention, the use implementation mode of the specific film type temperature sensor can automatically expand the functions of the sensor.
The above is only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited by this, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (10)
1. A temperature sensor, comprising a first substrate and a second substrate;
a plurality of first electrodes are arranged on one side of the first substrate, and a plurality of second electrodes are arranged on one side of the second substrate;
a plurality of temperature sensitive groups are arranged between the first substrate and the second substrate, and each temperature sensitive group comprises a P-type temperature sensitive semiconductor thermoelectric material unit and an N-type temperature sensitive semiconductor thermoelectric material unit;
the first electrodes, the second electrodes and the temperature sensitive groups are repeatedly connected in series in sequence to form a temperature sensing unit.
2. The temperature sensor of claim 1, wherein the materials of the P-type and N-type temperature sensitive semiconductor thermoelectric material units comprise one or more of the following: bi (Bi) 2 Te 3 Base compound, ag 2 S-based compound, ag 2 Se-based compound, ag 2 Te-based compound, snSe-based compound, mgAgSb-based compound and Mg 3 Sb 2 Base compounds, copper GeTe base compounds, pbTe base compounds, chalcogenides, skutterudite compounds, PEDOT: PSS complexes, PANI complexes, siGe compounds, and Half-Heusler compounds; the materials of the first substrate and the second substrate are rigid heat conduction materials, flexible materials, insulating heat conduction films or insulating heat conduction coating materials; the materials of the first electrode and the second electrode are rigid metal materials, flexible metal materials or graphite.
3. The temperature sensor of claim 1, wherein a thermally insulating encapsulation layer is disposed between the first substrate and the second substrate; the two ends of the heat insulation packaging layer are respectively connected with the first substrate and the second substrate, and the heat insulation packaging layer fills gaps among the temperature sensitive groups or is arranged around the temperature sensitive group array formed by a plurality of temperature sensitive groups.
4. The temperature sensor of claim 1, wherein the first electrode and the second electrode are each provided with a circuit connection layer, and the first electrode and the second electrode are each connected to the P-type temperature-sensitive semiconductor thermoelectric material unit and the N-type temperature-sensitive semiconductor thermoelectric material unit through the circuit connection layers.
5. The temperature sensor of claim 4, wherein the N-type and P-type temperature-sensitive semiconductor thermoelectric material units are each provided with a metal transition layer at both ends thereof, and the N-type and P-type temperature-sensitive semiconductor thermoelectric material units are each connected with the circuit connection layer through the metal transition layers.
6. The temperature sensor according to claim 1, wherein a contact layer for reducing contact thermal resistance between the first substrate and the second substrate and the surface to be measured is provided on both the other side of the first substrate and the other side of the second substrate.
7. The temperature sensor of claim 1, further comprising an internal resistance test circuit and a voltage acquisition circuit;
the internal resistance test circuit and the voltage acquisition circuit are connected with the first electrodes at two ends of the temperature sensing unit;
the internal resistance test circuit is used for obtaining the internal resistance value of the temperature sensor, and the voltage acquisition circuit is used for obtaining the open-circuit voltage of the temperature sensor.
8. The temperature sensor of claim 7, further comprising an acquisition/energy storage switching circuit, an energy management circuit, and a wireless signal transmission module;
the voltage acquisition circuit and the energy management circuit are connected with the first electrodes at two ends of the temperature sensing unit through the acquisition/energy storage switching circuit; the wireless signal transmitting module is connected with the energy management circuit, the internal resistance test circuit and the voltage acquisition circuit;
the wireless signal transmitting module is used for acquiring and transmitting the internal resistance value of the temperature sensor sent by the internal resistance testing circuit and acquiring and transmitting the open-circuit voltage of the temperature sensor sent by the voltage acquisition circuit.
9. A temperature detection method based on the temperature sensor of claim 1, comprising:
placing the first substrate in a first temperature measuring area, and placing the second substrate in a second temperature measuring area;
acquiring an internal resistance value and an open-circuit voltage of a temperature sensor;
and obtaining the temperature of the first temperature region to be measured and the temperature of the second temperature region to be measured according to the internal resistance value of the temperature sensor and the open-circuit voltage.
10. The method according to claim 9, wherein obtaining the temperature of the first temperature region to be measured and the temperature of the second temperature region to be measured according to the sum of the internal resistance values of the temperature sensors and the open circuit voltage comprises:
obtaining the temperature of the first region to be measured and the temperature of the second region to be measured according to the internal resistance value of the temperature sensor and the open-circuit voltage by the following formula:
T 1 ＝(R TEG -B)/α TEG +(V oc -A)/2S TEG
T 2 ＝(R TEG -B)/α TEG -(V oc -A)/2S TEG
wherein T is 1 For the temperature of the first region to be measured, R TEG The internal resistance value of the temperature sensor is A is a first linear correction constant, B is a second linear correction constant, alpha TEG Is the resistance temperature coefficient of the temperature sensor, V oc Is the open circuit voltage of the temperature sensor, S TEG Seebeck coefficient, T, for temperature sensor 2 Is the temperature of the first region to be measured.
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| CN117168546A (en) * | 2023-11-02 | 2023-12-05 | 苏州敏芯微电子技术股份有限公司 | Temperature and pressure combined sensor, preparation method thereof and packaging structure |
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| CN117168546A (en) * | 2023-11-02 | 2023-12-05 | 苏州敏芯微电子技术股份有限公司 | Temperature and pressure combined sensor, preparation method thereof and packaging structure |
| CN117168546B (en) * | 2023-11-02 | 2024-01-23 | 苏州敏芯微电子技术股份有限公司 | Temperature and pressure combined sensor, preparation method thereof and packaging structure |
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