CN101487747B - Absolute pressure transducer chip based on surface micro-machining and its production method - Google Patents
Absolute pressure transducer chip based on surface micro-machining and its production method Download PDFInfo
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Abstract
The invention relates to an absolute pressure sensor chip based on surface micromachining and a manufacturing method. The manufacturing method is characterized by comprising the following steps: adopting a low-stress silicon nitride film as a core structural layer of the pressure sensor chip and using a polycrystalline silicon film to form a force-sensitive resistor track; designing a film area of the low-stress silicon nitride film into a long rectangle, fully utilizing longitudinal piezoresistive effect of the polycrystalline silicon resistor track according to the stress distribution of the film area, and making the most of a tensile stress area on the film to put part of a pair of resistor tracks on the external surface of the film and arrange another two resistor tracks on the central position of the film; and separately contacting a folded bent angle part of each resistor track with a hole depositing metal to conduct the bent angle part. By adopting surface micromachining technology compatible with IC technology, the method can manufacture the absolute pressure sensor chip with a measuring range of 1KPa-1MPa and with high sensitivity, good stability and high precision.
Description
Technical field
The present invention relates to provide a kind of absolute pressure sensor die and method for making based on surface micromachined, provide or rather a kind of with the low stress nitride silicon thin film as structural sheet, polysilicon membrane forms force sensing resistance and adopts the absolute pressure sensor die and the method for making of surface micromachined, belongs to the silicon micro mechanical sensor technical field.
Background technology
Piezoresistive pressure sensor comes across the sixties in last century, add that at micromechanics subsequently the development of technology makes the sensitive element microminiaturization, sensor production mass, cost degradation, established leading position in the pressure survey field, close potentiometer type than traditional film, force balance type, become inductance type, become condenser type, much advanced on metal strain chip and the semiconductor strain chip sensor technology, have that highly sensitive, response speed is fast, good reliability, precision are higher, low-power consumption, be easy to series of advantages such as microminiaturized and integrated.Getting involved with large scale integrated circuit and computer software technology is in the intelligence sensor of characteristic, owing to it can make the basis that one chip multifunctional composite sensing element constitutes intelligence sensor.
The method that traditional piezoresistive pressure sensor adopts diffusion or ion to inject, mixing obtains 4 silicon strain resistors, constitutes the stress sensitive detecting pattern of resistance bridge on the monocrystalline silicon piece front, and the general pn of formation knot is isolated between resistance and the substrate.In order to satisfy the needs of testing range, the potassium hydroxide corrosion thinning is generally adopted at the back side, just often is called the body micromachined.For making absolute pressure transducer, after must adopting two silicon chip preprocessings earlier, form vacuum chamber through the high temperature bonding, polishing is thinned to needed thickness then, pass through the body micromachined in the front of bonding body again, form needed figure, to constitute testing circuit [Kovacs GTA, Maluf NI, Petersen KE.Bulk micromachining of silicon, P IEEE, 1998,86 (8): 1536～1551].
Yet, described absolute pressure sensor die based on the body micromachined is made following shortcoming: at first: be that the pn knot is isolated between resistance after the energising and the silicon substrate, when device temperature more than 100 ℃ the time, the pn junction leakage is very big, device can't be worked, the use of high temperature environment downforce test in therefore can't satisfying.Its two: be to obtain the vacuum reference cavity of absolute pressure test, must two after the silicon chip preprocessings, high temperature bonding under vacuum environment, and must polish attenuate again, so initial cost height, operation is various.Its three: the pressure transducer of body micromachined, must carry out the anisotropic wet deep etch to the silicon chip back, satisfy the demand of lower range test behind the attenuate, wasted areas a large amount of on the silicon chip like this, make the area that utilizes of silicon chip be far smaller than surface micromachined.For example: to a slice thickness is the silicon chip of four inches of the standards of 450 μ m, and the sensitive thin film for the pressure transducer that obtains 100 * 100 μ m need take 800 * 800 μ m silicon area to the body micromachined; And surface micro is only needed the zone of 100 * 100 μ m just much of that.[Lin?LW，Yun?W?J.Design，optimization?andfabrication?of?surface?micromachined?pressure?sensors，Mechatronics，1998，8：505-519，1998]。Its four: the pressure sensor chip of body micromachined is for satisfying the needs of encapsulation, also must and special-purpose glass (for example, model is Pyrex 7740) carry out electrostatic bonding to increase package strength, could satisfy reality and test needs; And the pressure sensor chip area of surface micromachined can be very little, more be compatible with existing microelectronic packaging technology, as the encapsulation of upside-down mounting welding pasters such as (Flip chip), make no matter be the chip manufacturing cost, or the packaging cost in later stage all is far smaller than the pressure sensor chip of body micromachined.Of paramount importancely be: the technology of the pressure transducer of body micromachined and existing integrated circuits (IC) technology is incompatible, therefore chip can't with circuit for signal conditioning, microprocessors etc. integrate, and the pressure sensor chip technology of surface micromachined is compatible mutually with IC technology, can be with circuit for signal conditioning, microprocessors etc. integrate, and other test functions can be integrated with same technology, as acceleration test, temperature test etc., make the chip multifunction, it is integrated more to meet present test macro, the demand for development of miniaturization and cost degradation.
Summary of the invention
Shortcoming based on the absolute pressure sensor die based on the body micromachined recited above is made the object of the present invention is to provide a kind of pressure sensor chip and method for making based on surface micromachined.
Specifically, the present invention adopts by silicon nitride (LS SiN) film of the low stress core structural layer as pressure sensor chip, polysilicon membrane is deposited on the LS SiN film, and by the optimal design of structure and position, dry etching is made and formed the force sensing resistance bar.
Be to improve output sensitivity, the film district of LS SiN film is designed to long rectangle, as shown in Figure 1.Stress envelope according to the film district, as shown in Figure 2, make full use of vertical piezoresistive effect of polysilicon resistance bar, utilize the part of tension stress on the LS SiN film as far as possible, the part of a pair of resistor stripe has been put into the outside of LS SiN film, the resistor stripe that had so both guaranteed four equivalences constitutes Hui Sideng and detects the examination circuit, make two resistor stripes be distributed on the long limit in LS SiN film district again, all be in the tension stress zone, be subjected to the tension stress effect and make resistor stripe be elongated, it is big that resistance becomes.Two other resistor stripe is arranged in the center in LS SiN film district, all be in the compressive stress zone in film district, the resistor stripe pressurized is compressed, the resistance decreasing thereby length shortens, do the time spent when the film district is subjected to external pressure like this, produce distortion, cause that a pair of resistor stripe resistance becomes big, a pair of in addition resistor stripe resistance diminishes, under the excitation of voltage, output terminal has voltage difference, can detect the external pressure size by the voltage that detects output.Simultaneously, reduced signal output because the suffered stress of the stress of the corner of the discounting of each resistor stripe and resistor stripe is opposite; In order to improve output sensitivity, when fabrication and processing, the mode depositing metal by opening contact hole is with its conducting, and Ling Qiao design has improved output sensitivity greatly like this, shown in Fig. 3 and 4.
It is that employing is made with the method for the surface micromachined of IC process compatible that the present invention listens the pressure sensor chip of song, specifically be 1. at first to make up sacrifice layer, on the silicon chip after high-temperature oxydation and the nitrogenize, adopt low pressure chemical vapor deposition (LPCVD) method deposit cryogenic oxidation silicon (LTO) in succession and mix the cryogenic oxidation silicon (PSG) of phosphorus, the corrosion back forms sacrifice layer, and wherein PSG is as the corrosion passage; 2. define polysilicon force sensing resistance bar then, with silicon nitride (LS SiN) film of LPCVD deposit low stress core structural layer as pressure sensor chip, use LPCVD deposit polysilicon membrane thereon, inject by boron diffusion or boron ion and to make polysilicon doping, high annealing makes behind the electrode dopant activation, corrosion forms the force sensing resistance of four outstanding polysilicons, accurately is arranged in the presser sensor position of LS SiN structural sheet; The condition of alloy activated at is under the 950-1200 ℃ of nitrogen protection, anneals 40-60 minute; 3. form the vacuum reference cavity of absolute pressure test, shown in Fig. 5 (c), on LS SiN structural sheet, use the method for reactive ion etching (RIE), erode away the corrosion hole of releasing sacrificial layer, silicon chip is immersed in the dense hydrofluoric acid solution, control time accurately erodes the sacrifice layer of LTO and PSG fully, makes its position become cavity; Use the LPCVD deposit by tetraethoxysilane (Si (OC again
2H
5) 4) monox (TEOS) that decompose to generate for the silicon source seals corrosion hole, because the air pressure during LPCVD growth TEOS in the boiler tube very low (720 ℃ time be 53.2Pa), when normal temperature was as 25 ℃ like this, airtight cavity internal gas pressure approached the vacuum reference cavity of absolute pressure transducer less than 15Pa; 4. aluminium wiring, the LS SiN that uses deposit thin among the LPCVD on polysilicon resistance is as insulation course, and behind the opening contact hole, the splash-proofing sputtering metal layer is finished metal lead wire by alloying after the corrosion; 5. last scribing, paster and detection, encapsulation.
In sum, a kind of absolute pressure sensor die and method for making provided by the invention based on surface micromachined, high sensitivity can be provided, stability is good, high-precision absolute pressure sensor die, carry out suitable modification by critical size to the sensitive membrane plot structure, can obtain the absolute pressure sensor die of range from 1KPa～1MPa, its method for making and IC process compatible, can and circuit for signal conditioning, microprocessor, and other test functions integrate, and low-cost production in enormous quantities is characterized in that adopting the low stress nitride silicon thin film of LPCVD deposit as structural membrane, the polysilicon resistance of LPCVD deposit is as force sensing resistance, constitute the Hui Sideng testing circuit, avoided the pressure sensor chip resistance of body micromachined and substrate pn knot to isolate and the leakage phenomenon that causes etc., make sensor performance more stable, precision is higher, the littler easier advantage such as integrated of cost.
Description of drawings
What Fig. 1 provided is structural representation (a) vertical view of long rectangular film, (b) grows the part of the structure of rectangular film
What Fig. 2 provided is long rectangular film stress envelope
Fig. 3 is designed pressure sensor chip resistance arrangenent diagram
Fig. 4 is the STRESS VARIATION of designed pressure sensor chip resistance
The absolute pressure sensor die manufacture craft process flow diagram that is based on surface micromachined that Fig. 5 provides
The pressure sensor chip photo of Fig. 6 made
1 represents metal lead wire among the figure; The 2 bent angle parts of representing polysilicon resistance to give a discount; The long rectangle low stress nitride silicon thin film of 3 representatives; 4 represent the polysilicon resistance bar; 5 represent original silicon chip; 6 represent high-temperature oxydation silicon; 7 represent ground floor low stress nitride silicon; The cryogenic oxidation silicon of phosphorus is mixed in 8 representatives; 9 represent cryogenic oxidation silicon; 10 represent second layer low stress nitride silicon; 11 represent the polysilicon resistance bar; 12 represent vacuum chamber; 13 represent second layer low stress nitride silicon; 14 represent metal connecting line; 15 represent tetraethoxysilane (Si (OC
2H
5) 4) monox (TEOS) that decompose to generate for the silicon source; 16 represent displacement place sacrifice layer and the corrosion hole opened, and the back is stopped up by TEOS; 17 represent the discounting bent angle of resistance, use metal conduction; 18 represent polysilicon resistance; 19 represent the low stress nitride silicon thin film.
Embodiment
Further specify substantive distinguishing features of the present invention and obvious improvement below by concrete enforcement, but the present invention only only limits to described embodiment by no means.
Range is absolute pressure sensor die and the method for making based on surface micromachined of 450KPa: designed LS SiN Laminate construction thickness h is 1.2 μ m, and the long limit 2b in long rectangular membrane district is 360 μ m, and minor face 2a is 48 μ m, shown in Fig. 1 (a).Polysilicon resistance thickness is 0.4 μ m, and resistance is 5000 ohm, and sacrificial layer thickness is 2 μ m.
Concrete implementation step is:
1. structure sacrifice layer,
Shown in Fig. 5 (a), because surperficial microcomputer machining is only in single-sided process, the silicon chip that initial silicon chip is two throwings or single throwing face can, thickness and crystal orientation are not required, at first used silicon chip is carried out standard cleaning, the back is with deionized water rinsing 10～20 minutes and with dewatering oven dry in the drier.
Thermal oxide in oxidation furnace (Oxide) 0.1～1 μ m; After enter low pressure vapour phase chemogenic deposit (LPCVD) stove deposit low stress nitride silicon (LS SiN) 0.1～1 μ m, deposit cryogenic oxidation silicon (LTO) 1.0～2.0 μ m in the LPCVD stove again.The LTO of photoetching for the first time, the back is at the hydrofluorite (BOE of 38 ℃ of bufferings, the volume ratio of ammoniacal liquor and hydrofluorite is 7: 1) corrosion LTO, remove photoresist in 120 ℃ the concentrated sulphuric acid in the back, behind the deionized water rinsing, standard cleaning is used deionized water rinsing 10～20 minutes again, and entering after the oven dry grows in the LPCVD stove mixes cryogenic oxidation silicon (PSG) 0.1～1 μ m of phosphorus.The shape of lithographic definition PSG is for the second time corroded PSG in 38 ℃ of BOE solution again, removes photoresist in 120 ℃ the concentrated sulphuric acid in the back, behind the deionized water rinsing, and standard cleaning again, with deionized water rinsing 10～20 minutes.
2. define the polysilicon force sensing resistance
Shown in Fig. 5 (b); silicon chip behind the cleaning, drying is entered growth LS SiN1.2 μ m in the LPCVD stove; and then in the LPCVD stove deposit polysilicon membrane (Poly); thickness is 0.4 μ m; by boron diffusion or the injection of boron ion polysilicon membrane is mixed, be activator impurity and the defective that elimination is spread or injection causes, and impurity is evenly distributed; silicon chip under 950 ℃～1200 ℃ nitrogen protections of high temperature, was annealed 40 minutes～60 minutes.The shape of photoetching Poly silicon force sensing resistance bar for the third time, plasma etching ICP required position on LS SiN of employing dry method inductive coupling stays the force sensing resistance bar of Poly silicon, remove photoresist in 120 ℃ the concentrated sulphuric acid in the back, behind the deionized water rinsing, after the standard cleaning, use deionized water rinsing 10～20 minutes again.
3. form the vacuum reference cavity of absolute pressure test
Shown in Fig. 5 (c), with the 4th the lithographic definition corrosion hole of silicon chip after the oven dry, adopt movable ion corrosion RIE etching LS SiN, again 40%HF sacrifice layer corrosion 5 minutes～30 minutes, with deionized water rinsing 10～20 minutes, and in deionized water, soaked 10 hours～20 hours, after the standard cleaning, use deionized water rinsing 10～20 minutes again.Enter after the oven dry in the LPCVD stove and grow by tetraethoxysilane (Si (OC
2H
5) 4) TEOS that decomposes for the silicon source seals corrosion hole.The 5th lithographic definition TEOS bolt, at 38 ℃ of BOE corrosion TEOS, deionized water rinsing 10～20 minutes are used in the back, after the standard cleaning, use deionized water rinsing 10～20 minutes again.Oven dry.
4. aluminium wiring
Shown in Fig. 5 (d), the slice, thin piece after the oven dry is entered growth LS SiN0.1 μ m～0.2 μ m insulation course in the LPCVD stove.The 6th lithographic definition contact hole carved LS SiN with RIE, back sputtered aluminum Al film 0.6 μ m～1.2 μ m, and the 7th photoetching Al,
Corrode Al in the Al corrosive liquid, deionized water rinsing 10～20 minutes are used in the back.Oven dry.High temperature is 450 ℃ in alloying furnace, alloying under the nitrogen protection;
5. scribing, paster and detection.Chip photo after the scribing as shown in Figure 6.
Claims (4)
1. absolute pressure sensor die based on surface micromachined is characterized in that adopting by the silicon nitride film of the low stress structural sheet as pressure sensor chip, and polysilicon membrane is deposited on the silicon nitride film of low stress; Polysilicon membrane forms the force sensing resistance bar; The resistor stripe of four equivalences constitutes the Hui Sideng testing circuit, two resistor stripes are distributed on the long limit in long rectangular membrane district in the resistor stripe of four equivalences, be in the tension stress zone, two other resistor stripe is arranged in the center in film district, is in the compressive stress zone in film district; The film district of low stress nitride silicon thin film is designed to long rectangle, utilizes vertical piezoresistive effect of polysilicon resistance bar, the part of a pair of resistor stripe has been put into the outside of film.
2. make the method for the absolute pressure sensor die based on surface micromachined as claimed in claim 1, it is characterized in that process compatible with IC, adopt the structural sheet of the low stress nitride silicon thin film of LPCVD deposit as chip, use LPCVD deposit polysilicon membrane in the above, boron diffusion or ion inject, activator impurity behind the high annealing, the sensitive position at low stress nitride silicon behind the dry etching forms the force sensing resistance bar, forms the Hui Sideng testing circuit by metal lead wire again; Specifically may further comprise the steps:
1. make up sacrifice layer on the silicon chip after high-temperature oxydation and the nitrogenize, adopt LPCVD method deposit LTO and PSG in succession, the corrosion back forms sacrifice layer, and wherein PSG is as the corrosion passage;
2. define polysilicon force sensing resistance bar then, with the structural sheet of LPCVD deposit LS SiN film as pressure sensor chip, on LS SiN film, use LPCVD deposit polysilicon membrane, inject by boron diffusion or boron ion and to make polysilicon doping, after high annealing makes electrode dopant activation, corrosion forms the force sensing resistance bar of four outstanding polysilicons, is arranged in the presser sensor position of LS SiN structural sheet;
3. form the vacuum reference cavity of absolute pressure test, on LS SiN structural sheet,, erode away the corrosion hole of releasing sacrificial layer with the method for reactive ion etching, silicon chip is immersed in the dense hydrofluoric acid solution, control time erodes the sacrifice layer of LTO and PSG fully, makes its position become cavity; Decompose the monox that generate by tetraethoxysilane for the silicon source with the LPCVD deposit again and seal corrosion hole, in the time of 25 ℃, airtight cavity internal gas pressure approaches the vacuum reference cavity of absolute pressure transducer;
4. aluminium wiring, the LS SiN that uses deposit thin among the LPCVD on the force sensing resistance bar of polysilicon is as insulation course, and behind the opening contact hole, the splash-proofing sputtering metal layer is finished metal lead wire by alloying after the corrosion;
5. last scribing, paster and detection, encapsulation;
Described LPCVD is a low-pressure chemical vapor deposition, and LTO is a cryogenic oxidation silicon, and PGS is a cryogenic oxidation silicon of mixing phosphorus, and LS SiN is a low stress nitride silicon.
3. by the method for making of the described absolute pressure sensor die based on surface micromachined of claim 2, it is characterized in that
1. structure sacrifice layer
A) to the initial pair throwing or the silicon chip of single throwing face, clean, the back is dewatered, is dried with deionized water rinsing 10～20 minutes and with drier;
B) with the silicon slice placed thermal oxide in oxidation furnace after the step a processing; After enter LPCVD stove deposit LS SiN, deposit LTO in the LPCVD stove again;
C) photoetching first time LTO, LTO is corroded in the back in the BOE of 38 ℃ of bufferings solution, and removing photoresist in 120 ℃ the concentrated sulphuric acid in the back, behind the deionized water rinsing, after cleaning, uses deionized water rinsing 10～20 minutes, enters the PSG that grows in the LPCVD stove after the oven dry;
D) shape of lithographic definition PSG is for the second time again corroded PSG in the BOE of 38 ℃ of bufferings solution, remove photoresist in 120 ℃ the concentrated sulphuric acid in the back, and behind the deionized water rinsing, standard cleaning again was with deionized water rinsing 10～20 minutes;
2. define polysilicon force sensing resistance bar
A) silicon chip behind step 1 cleaning, drying is entered in the LPCVD stove growth LS SiN, and then in the LPCVD stove deposit polysilicon membrane, inject by boron diffusion or boron ion and polysilicon membrane to be mixed and activate;
B) photoetching for the third time forms the shape of polysilicon resistance bar, be to adopt plasma etch process required position on LS SiN of dry method inductive coupling to stay polysilicon force sensing resistance bar, remove photoresist in 120 ℃ the concentrated sulphuric acid in the back, behind the deionized water rinsing, after cleaning, use deionized water rinsing 10～20 minutes;
3. form the vacuum reference cavity of absolute pressure test
A) with the 4th the lithographic definition corrosion hole of silicon chip after step 2 oven dry, adopt reactive ion etching method etching LS SiN, be among the 40%HF in concentration expressed in percentage by volume again, sacrifice layer corrosion 5 minutes～30 minutes is used deionized water rinsing 10～20 minutes; And in deionized water, soaked 10 hours～20 hours, after cleaning, use deionized water rinsing 10～20 minutes;
B) enter in the LPCVD stove growth after the oven dry and seal corrosion hole by the monox that tetraethoxysilane decomposes for the silicon source;
C) the monox bolt of the 5th lithographic definition silicon source decomposition, the monox that decompose in corrosion silicon source in the BOE of 38 ℃ of bufferings solution was used deionized water rinsing 10～20 minutes at last, after cleaning, used deionized water rinsing 10～20 minutes, dried; Formation is near the vacuum reference cavity of absolute pressure transducer;
4. aluminium wiring
A) slice, thin piece after step 3 oven dry is entered growth LS SiN insulation course in the LPCVD stove;
B) the 6th lithographic definition contact hole, with reactive ion etching method etching LS SiN, sputtered aluminum Al film then, the 7th photoetching Al specifically is to corrode Al in the Al corrosive liquid, the back is with deionized water rinsing 10～20 minutes, oven dry; Again in alloying furnace under 450 ℃ and nitrogen protection alloying;
Described buffering BOE solution is that volume ratio is 7: 1 the ammoniacal liquor and the solution of hydrofluorite.
4. by the method for making of claim 2 or 3 described absolute pressure sensor die based on surface micromachined, it is characterized in that forming in the vacuum reference cavity of absolute pressure test air pressure near the vacuum reference cavity of absolute pressure less than 15Pa in step 3.
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| CN101881676B (en) * | 2010-06-22 | 2012-08-29 | 中国科学院上海微系统与信息技术研究所 | Hexagonal silicon membrane piezoresistive pressure sensor for embedded monocrystal silicon cavity and method |
| CN102338681B (en) * | 2010-07-29 | 2013-03-13 | 上海华虹Nec电子有限公司 | Planar silicon pressure sensor and manufacturing method thereof |
| CN102175891B (en) * | 2011-01-05 | 2012-11-07 | 江苏大学 | Method for manufacturing three-axis thermal convection acceleration sensor chip |
| CN102589762B (en) * | 2012-03-08 | 2014-01-15 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| DE102013217349B4 (en) * | 2013-08-30 | 2024-06-13 | Robert Bosch Gmbh | Micromechanical sensor arrangement and corresponding manufacturing process |
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| CN105384143B (en) * | 2014-09-04 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and production method thereof, and electronic apparatus |
| US9903775B2 (en) * | 2014-12-26 | 2018-02-27 | Nagano Keiki Co., Ltd. | Sensor module and method for producing sensor module |
| CN106092427B (en) * | 2016-06-02 | 2018-08-03 | 中国电子科技集团公司第四十九研究所 | A kind of double elastic sensing elements of absolute pressure sensor |
| CN109883316B (en) * | 2019-03-22 | 2021-01-29 | 中国科学院力学研究所 | Resistance type strain sensor and strain measurement method |
| CN112067079B (en) * | 2020-09-17 | 2021-08-17 | 吉林大学 | Array type automobile oil tank liquid level measurement pressure sensor and preparation method thereof |
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