CN108731858B - A kind of MEMS pressure sensor and preparation method thereof - Google Patents
A kind of MEMS pressure sensor and preparation method thereof Download PDFInfo
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- CN108731858B CN108731858B CN201810558856.9A CN201810558856A CN108731858B CN 108731858 B CN108731858 B CN 108731858B CN 201810558856 A CN201810558856 A CN 201810558856A CN 108731858 B CN108731858 B CN 108731858B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Abstract
This application discloses a kind of MEMS pressure sensors and preparation method thereof, the sensor includes: multiple strain induction zones, the induction zone that strains is according to the difference of its phosphonium ion implantation concentration, it is divided into tri- groups of a, b, c, the a group strain induction zone includes strain induction zone (101), (102), (103) and (104)；It includes strain induction zone (105), (106), (107) and (108) that b group, which strains induction zone,；It includes strain induction zone (109) and (110) that c group, which strains induction zone,.The invention has the advantages that structure is simple, big, high sensitivity, high reliability with range, production method is convenient, does not simplify processing technology only with a kind of ion implanting using complicated membrane structure, saves cost.
Description
Technical field
The present invention relates to a kind of MEMS pressure sensors and preparation method thereof.
Background technique
MEMS (Microelectro Mechanical Systems, MEMS) is using various advanced micro-nanos
Processing technology and the research frontier for being aided with the multi-crossed disciplines that newest present information electronic technology development is got up.With tradition
Sensor is compared, and MEMS sensor has that small in size, light weight and cost is low, low in energy consumption, high reliablity and is easy to mass production
The advantages that, be therefore widely used in aerospace equipment, deep space satellite, various vehicles, biomedicine, consumer electronics factory product and
The fields such as intelligent robot.
The patent document of CN105036054B discloses a kind of MEMS pressure sensor and production method, on substrate side
Equipped with the sensitive film layer for forming vacuum chamber with substrate, the sensitivity film layer includes positioned at the sensitive portion at middle part.The disadvantage is that: it is basic
All using flexible sheet (film) structure.Due to the fragility and unstability of flexible sheet structure, traditional MEMS pressure
Force snesor useful range can only achieve 10MPa, cannot measure to high pressure, super-pressure (100MPa).And when pressure is surveyed
After measuring range increase, transducer sensitivity will be greatly affected.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of MEMS pressure sensors, and range is big, sensitivity
It is high.
To achieve the goals above, the technical solution adopted by the present invention are as follows: a kind of MEMS pressure sensor, feature exist
In, comprising: multiple strain induction zones, the strain induction zone are divided into a, b, c tri- according to the difference of its phosphonium ion implantation concentration
Group, a group strain induction zone include strain induction zone 101,102,103 and 104；It includes strain induction that b group, which strains induction zone,
Area 105,106,107 and 108；It includes strain induction zone 109 and 110 that c group, which strains induction zone,.
The invention has the benefit that
Structure is simple, and the MEMS sensor includes: multiple strain induction zones, and the strain induction zone is according to its phosphonium ion
The difference of implantation concentration is divided into tri- groups of a, b, c, can measure triaxiality, is i.e. all six components of stress, and is complete temperature
Degree compensation；Based on made of solid silicon piezoresistive effect, have that range is big, high sensitivity, high reliability, production method
It is convenient, only with a kind of ion implanting, processing technology is simplified, saves cost.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is MEMS pressure sensor schematic diagram of the invention；
Fig. 2 is MEMS pressure sensor production method flow chart of the invention；
Fig. 3 is experiment effect implementation figure of the invention.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in
Technical problem basically reaches the technical effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described
Description is being not intended to limit the scope of the present application for the purpose of the rule for illustrating the application.The protection scope of the application
As defined by the appended claims.
Please refer to Fig. 1, MEMS pressure sensor of the invention, comprising: multiple strain induction zones, the strain induction zone root
According to the difference of its phosphonium ion implantation concentration, it is divided into tri- groups of a, b, c, a group strain induction zone includes strain induction zone 101,
102,103 and 104；It includes strain induction zone 105,106,107 and 108 that b group, which strains induction zone,；C group strain induction zone includes to answer
Become induction zone 109 and 110.
Preferably, as shown in Figure 1, MEMS triaxiality sensor of the present invention includes 10 strain induction zones: 101,
102,103,104,105,106,107,108,109 and 110.According to the difference of its phosphonium ion implantation concentration, this 10 are strained
It includes 101,102,103 and 104 that three groups: a group is divided into induction；B group includes 105,106,107 and 108；C group includes 109 Hes
110.111 be the contact hole for connecting strain induction zone and 112 metal aluminum steels shown in Fig. 1.
Referring to figure 2., the production method of a kind of MEMS pressure sensor of the invention, comprising:
Prepare p-type (111) twin polishing silicon wafer；
The injection of a group phosphonium ion forms strain induction zone 101,102,103 and 104；
The injection of b group phosphonium ion forms strain induction zone 105,106,107 and 108；
The injection of c group phosphonium ion forms strain induction zone 109 and 110；
Surface groove is prepared around varistor using reactive ion etching process；
Above-mentioned silicon wafer is heat-treated；
Prepare silicon oxide layer；
Contact hole photoetching；
Metallic aluminum deposit；
Metal interconnection layer forming.
Preferably, the foil gauge resistance variations of the strain induction zone 101 to 110With triaxiality σ '11, σ '22,
σ′33, σ '12, σ '13With σ '23Meet following algorithm:
In formulaRepresent pressure drag parameter, αK(k=a, b, c) represents temperature-coefficient of electrical resistance, R1Generation
The strain sheet resistance of table strain induction zone 101；R2Represent the strain sheet resistance of strain induction zone 102； R3Represent strain induction zone
103 strain sheet resistance；R4Represent the strain sheet resistance of strain induction zone 104； R5Represent the foil gauge electricity of strain induction zone 105
Resistance；R6Represent the strain sheet resistance of strain induction zone 106； R7Represent the strain sheet resistance of strain induction zone 107；R8Represent strain
The strain sheet resistance of induction zone 108； R9Represent the strain sheet resistance of strain induction zone 109；R10Represent strain induction zone 110
Strain sheet resistance.
Specific embodiment is as described below:
Step 1: preparing p-type (111) twin polishing silicon wafer.It will be put with a thickness of the p-type of 300mm (111) twin polishing silicon wafer
Enter Piranha solution (3H2SO4:1H2O2) 2 minutes cleaning silicon chips；Silicon wafer is put into buffered oxide etch solution 5 minutes again and is gone
Except the oxide layer of silicon chip surface；
Step 2: preparation a group strains induction zone.Specific steps include:
Step 2-1: above-mentioned silicon wafer is placed on rotary-tray, and photoresist solution HPR504 is sprayed on silicon chip surface；
Accelerate rotary-tray to 500 revs/min, is kept for 500 revs/min of rotary-tray rotate 10 seconds, further accelerate rotary-tray extremely
It 4000 revs/min, is kept for 40 seconds；
Step 2-2: being heated to 115 DEG C for vacuum hot plate, and silicon wafer is put into soft in heating plate dry 90 seconds；
Step 2-3: silicon wafer is 15 minutes cooling；
Step 2-4: using the photoresist of photolithography plate #1 exposed silicon on piece, exposure energy 195mJ/cm2, the time for exposure 2.6
Second；
Step 2-5: silicon wafer is put into developer solution and is developed 25 seconds；
Step 2-6: being heated to 120 DEG C for constant temperature oven, and silicon wafer is put into baking oven and is dried firmly 20 minutes；
Step 2-7: using ion implantation technique, is 80keV, implantation dosage 1.9x10 by energy15cm-2Phosphonium ion
It is injected into the above-mentioned silicon wafer with photoresist, a group is formed on silicon wafer and strains induction zone, is i.e. strain induction zone 101,102,103
With 104.
Step 3: removing photoresist, using the above-mentioned silicon wafer of plasma etching 20 minutes, remove the photoresist on silicon wafer；Silicon wafer is put again
Enter Piranha solution (3H2SO4:1H2O2) 2 minutes cleaning silicon chips, silicon wafer is dried with nitrogen with dry.
Step 4: preparation b group strains induction zone.Specific steps include:
Step 4-1: above-mentioned silicon wafer is placed on rotary-tray, and photoresist solution HPR504 is sprayed on silicon chip surface；
Accelerate rotary-tray to 500 revs/min, is kept for 500 revs/min of rotary-tray rotate 10 seconds, further accelerate rotary-tray extremely
It 4000 revs/min, is kept for 40 seconds；
Step 4-2: being heated to 115 DEG C for vacuum hot plate, and silicon wafer is put into soft in heating plate dry 90 seconds；
Step 4-3: silicon wafer is 15 minutes cooling；
Step 4-4: using the photoresist of photolithography plate #2 exposed silicon on piece, exposure energy 195mJ/cm2, the time for exposure 2.6
Second；；
Step 4-5: silicon wafer is put into developer solution and is developed 25 seconds；
Step 4-6: being heated to 120 DEG C for constant temperature oven, and silicon wafer is put into baking oven and is dried firmly 20 minutes；
Step 4-7: using ion implantation technique, is 80keV, implantation dosage 1.3x10 by energy15cm-2Phosphonium ion
It is injected into the above-mentioned silicon wafer with photoresist, b group is formed on silicon wafer and strains induction zone, is i.e. strain induction zone 105,106,107
With 108.
Step 5: removing photoresist, using the above-mentioned silicon wafer of plasma etching 20 minutes, remove the photoresist on silicon wafer；Silicon wafer is put again
Enter Piranha solution (3H2SO4:1H2O2) 2 minutes cleaning silicon chips, silicon wafer is dried with nitrogen with dry.
Step 6: preparation c group strains induction zone.Specific steps include:
Step 6-1: above-mentioned silicon wafer is placed on rotary-tray, and photoresist solution HPR504 is sprayed on silicon chip surface；
Accelerate rotary-tray to 500 revs/min, is kept for 500 revs/min of rotary-tray rotate 10 seconds, further accelerate rotary-tray extremely
It 4000 revs/min, is kept for 40 seconds；
Step 6-2: being heated to 115 DEG C for vacuum hot plate, and silicon wafer is put into soft in heating plate dry 90 seconds；
Step 6-3: silicon wafer is 15 minutes cooling；
Step 6-4: using the photoresist of photolithography plate #3 exposed silicon on piece, exposure energy 195mJ/cm2, the time for exposure 2.6
Second；；
Step 6-5: silicon wafer is put into developer solution and is developed 25 seconds；
Step 6-6: being heated to 120 DEG C for constant temperature oven, and silicon wafer is put into baking oven and is dried firmly 20 minutes；
Step 6-7: using ion implantation technique, is 80keV, implantation dosage 7.2x10 by energy15cm-2Phosphonium ion
It is injected into the above-mentioned silicon wafer with photoresist, c group is formed on silicon wafer and strains induction zone, is i.e. strain induction zone 109 and 110.
Step 7: removing photoresist, using the above-mentioned silicon wafer of plasma etching 20 minutes, remove the photoresist on silicon wafer；Silicon wafer is put again
Enter Piranha solution (3H2SO4:1H2O2) 2 minutes cleaning silicon chips, silicon wafer is dried with nitrogen with dry；
Step 8: preparing the surface groove near varistor.Specific steps include:
Step 8-1: above-mentioned silicon wafer is placed on rotary-tray, and photoresist solution HPR504 is sprayed on silicon chip surface；
Accelerate rotary-tray to 500 revs/min, is kept for 500 revs/min of rotary-tray rotate 10 seconds, further accelerate rotary-tray extremely
It 4000 revs/min, is kept for 40 seconds；
Step 8-2: being heated to 115 DEG C for vacuum hot plate, and silicon wafer is put into soft in heating plate dry 90 seconds；
Step 8-3: silicon wafer is 15 minutes cooling；
Step 8-4: using the photoresist of photolithography plate #4 exposed silicon on piece, exposure energy 195mJ/cm2, time for exposure 2.6
Second；
Step 8-5: silicon wafer is put into developer solution and is developed 25 seconds；
Step 8-6: being heated to 120 DEG C for constant temperature oven, and silicon wafer is put into baking oven and is dried firmly 20 minutes；
Step 8-7: using reactive ion etching (RIE) method, the table that the speed preparation depth with 10 nm/secs is 200 μm
Face groove, i.e., shown in FIG. 1 113.
Step 9: removing photoresist, using the above-mentioned silicon wafer of plasma etching 20 minutes, remove the photoresist on silicon wafer；Silicon wafer is put again
Enter Piranha solution (3H2SO4:1H2O2) 2 minutes cleaning silicon chips, silicon wafer is dried with nitrogen with dry.
Step 10: above-mentioned silicon wafer is heat-treated.Specific steps include:
Step 10-1: being heated to 950 DEG C for tubular type furnace temperature, and dry nitrogen is full of in furnace, silicon wafer is put in furnace 20 points
Clock；
Step 10-2: opening tube furnace air inlet, enter cleaned air in furnace, silicon wafer is put 15 minutes again in furnace,
Silicon chip surface is set to grow the oxide layer of about 15 nanometer thickness.
Step 11: preparing silicon oxide layer.Using plasma enhances chemical vapour deposition technique, with the speed of 1 nm/sec
650 nano oxidized silicon layers are deposited in front side of silicon wafer, deposit 300 nano oxidized silicon layers in silicon chip back side.
Step 12: preparing contact hole.Specific steps include:
Step 12-1: above-mentioned silicon wafer is placed on rotary-tray, and photoresist solution HPR504 is sprayed on silicon chip surface；
Accelerate rotary-tray to 500 revs/min, is kept for 500 revs/min of rotary-tray rotate 10 seconds, further accelerate rotary-tray extremely
It 4000 revs/min, is kept for 40 seconds；
Step 12-2: being heated to 115 DEG C for vacuum hot plate, and silicon wafer is put into soft in heating plate dry 90 seconds；
Step 12-3: silicon wafer is 15 minutes cooling；
Step 12-4: using the photoresist of photolithography plate #5 exposed silicon on piece, exposure energy 195mJ/cm2, the time for exposure 2.6
Second；
Step 12-5: silicon wafer is put into developer solution and is developed 25 seconds；
Step 12-6: being heated to 120 DEG C for constant temperature oven, and silicon wafer is put into baking oven and is dried firmly 20 minutes；
Step 12-7: using reactive ion etching (RIE) method, opens N trap ion implantation window with the speed of 7 nm/secs；
Step 12-8: it is 860 DEG C, 40 minutes in the diffusion furnace equipped with solid phosphorus source that silicon wafer, which is put into temperature,.
Step 13: removing photoresist, using the above-mentioned silicon wafer of plasma etching 20 minutes, remove the photoresist on silicon wafer；Again by silicon wafer
It is put into Piranha solution (3H2SO4:1H2O2) 2 minutes cleaning silicon chips, silicon wafer is dried with nitrogen with dry.
Step 14: metallic aluminum deposit.Specific steps include:
Step 14-1: being put into buffered oxide etch liquid 2 minutes for above-mentioned silicon wafer, removes phosphosilicate layer；
Step 14-2: using sputter coating technology, and control 7 micrometer of mercury pressure (mTorr) of sputter pressure sputters 45 points
Clock obtains the aluminium layer of 700 nanometer thickness.
Step 15: metal interconnection layer forming.Specific steps include:
Step 15-1: above-mentioned silicon wafer is placed on rotary-tray, and photoresist solution HPR504 is sprayed on silicon chip surface；
Accelerate rotary-tray to 500 revs/min, is kept for 500 revs/min of rotary-tray rotate 10 seconds, further accelerate rotary-tray extremely
It 4000 revs/min, is kept for 40 seconds；
Step 15-2: being heated to 115 DEG C for vacuum hot plate, and silicon wafer is put into soft in heating plate dry 90 seconds；
Step 15-3: silicon wafer is 15 minutes cooling；
Step 15-4: using the photoresist of photolithography plate #5 exposed silicon on piece, exposure energy 195mJ/cm2, the time for exposure 2.6
Second；
Step 15-5: silicon wafer is put into developer solution and is developed 25 seconds；
Step 15-6: being heated to 120 DEG C for constant temperature oven, and silicon wafer is put into baking oven and is dried firmly 20 minutes；
Step 15-7: being put into phosphoric acid nitric acid solution for above-mentioned silicon wafer and etch aluminium layer with the speed of 35 nm/minutes,
Step 15-8: silicon wafer is put into 450 DEG C of tube furnaces 15 minutes, is diffused into aluminium in silicon wafer good to be formed
Ohmic contact.
According to algorithm (1), pressure σ33It can indicate are as follows:
D is pressure drag parameter B in formula1,B2,B3Function
Temperature variation is not contained from the pressure component for finding out MEMS sensor measurement proposed by the present invention above, is complete
Temperature-compensating, change in use process without the concern for ambient temperature, does not need that additional thermometric instruments are installed, it can be with
It is measured for round-the-clock triaxiality.
Verify by experiment as follows: experimental provision schematic diagram is as shown in figure 3, MEMS sensor 903 of the present invention is put
On experiment porch 904, pressure is applied to sensor by cylindrical fixture 902, the record of force snesor 901 applies pressure value.
The signal of MEMS pressure sensor is shown and is recorded in oscillograph 906 by printed circuit board 905.The experimental results showed that this hair
The bright MEMS pressure sensor useful range is up to 100MPa, and the introducing of surface groove makes the sensitivity of pressure sensor
128.9 μ V/ (VkPa) are increased to from 56.8 μ V/ (VkPa).
The present invention has substantive distinguishing features outstanding and significant progress:
Structure is simple, and the MEMS sensor includes: multiple strain induction zones, and the strain induction zone is according to its phosphonium ion
The difference of implantation concentration is divided into tri- groups of a, b, c, and is complete temperature-compensating；Based on made of solid silicon piezoresistive effect, adopt
With surface groove technology, the sensitivity of sensor is improved while improving pressure measurement range；The big, sensitivity with range
High, high reliability, production method is convenient, is not simplified using complicated membrane structure only with a kind of ion implanting
Processing technology, saves cost.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (6)
1. a kind of MEMS pressure sensor, which is characterized in that feel including p-type (111) twin polishing silicon wafer and multiple strains
Area is answered, the multiple strain induction zone is set to the same plane height of the p-type (111) twin polishing silicon wafer, the strain
Induction zone is divided into tri- groups of a, b, c, a group strain induction zone includes the first strain according to the difference of its phosphonium ion implantation concentration
Induction zone (101), the second strain induction zone (102), third strain induction zone (103) and the 4th strain induction zone (104)；B group
Straining induction zone includes the 5th strain induction zone (105), the 6th strain induction zone (106), the 7th strain induction zone (107) and the
Eight strains induction zone (108)；It includes the 9th strain induction zone (109) and the tenth strain induction zone (110) that c group, which strains induction zone,；
Wherein, first strain induction zone (101), the 5th strain induction zone (105), the 9th strain induction zone (109) and horizontal line
Angle is 0 degree of angle；The third strains induction zone (103), the 7th strain induction zone (107), the tenth strain induction zone (110) with
Horizontal line angle is an angle of 90 degrees；4th strain induction zone (104), the 8th strain induction zone (108) are with horizontal line angle
45 degree of angles；Second strain induction zone (102), the 6th strain induction zone (106) and horizontal line angle are 135 degree of angles.
2. a kind of production method of MEMS pressure sensor characterized by comprising
Prepare p-type (111) twin polishing silicon wafer；
The injection of a group phosphonium ion, forms the first strain induction zone (101), the second strain induction zone (102), and third strains induction zone
(103) and the 4th strains induction zone (104)；
The injection of b group phosphonium ion forms the 5th strain induction zone (105), the 6th strain induction zone (106), the 7th strain induction zone
(107) and the 8th strains induction zone (108)；
The injection of c group phosphonium ion forms the 9th strain induction zone (109) and the tenth strain induction zone (110)；The first strain sense
Area (101) is answered to be in the same plane height of the p-type (111) twin polishing silicon wafer to the tenth strain induction zone (110),
In, first strain induction zone (101), the 5th strain induction zone (105), the 9th strains induction zone (109) and horizontal wire clamp
Angle is 0 degree of angle；The third strains induction zone (103), the 7th strain induction zone (107), the tenth strain induction zone (110) and water
Horizontal line angle is an angle of 90 degrees；4th strain induction zone (104), the 8th strain induction zone (108) and horizontal line angle are 45
Spend angle；Second strain induction zone (102), the 6th strain induction zone (106) and horizontal line angle are 135 degree of angles；
Surface groove is prepared around varistor using reactive ion etching process；
Above-mentioned silicon wafer is heat-treated；
Prepare silicon oxide layer；
Contact hole photoetching；
Metallic aluminum deposit；
Metal interconnection layer forming.
3. production method according to claim 2, which is characterized in that first strain induction zone (101) to the tenth is answered
Become the foil gauge resistance variations of induction zone (110)With triaxiality σ '11, σ '22, σ '33, σ '12, σ '13With σ '23Meet following
Algorithm:
In formulaRepresent pressure drag parameter, αK(k=a, b, c) represents temperature-coefficient of electrical resistance, R1Represent first
Strain the strain sheet resistance of induction zone (101)；R2Represent the strain sheet resistance of the second strain induction zone (102)；R3Third is represented to answer
Become the strain sheet resistance of induction zone (103)；R4Represent the strain sheet resistance of the 4th strain induction zone (104)；R5Represent the 5th strain
The strain sheet resistance of induction zone (105)；R6Represent the strain sheet resistance of the 6th strain induction zone (106)；R7Represent the 7th strain sense
Answer the strain sheet resistance in area (107)；R8Represent the strain sheet resistance of the 8th strain induction zone (108)；R9Represent the 9th strain induction
The strain sheet resistance in area (109)；R10Represent the strain sheet resistance of the tenth strain induction zone (110).
4. production method according to claim 3, which is characterized in that a group phosphonium ion injection includes: that Implantation Energy is
80keV, implantation dosage 1.9x1015cm-2Phosphonium ion.
5. production method according to claim 3, which is characterized in that the b group phosphonium ion injection includes: that Implantation Energy is
80keV, implantation dosage 1.3x1015cm-2Phosphonium ion.
6. production method according to claim 3, which is characterized in that the c group phosphonium ion injection includes: that Implantation Energy is
80keV, implantation dosage 7.2x1015cm-2Phosphonium ion.
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| CN1193218C (en) * | 2003-02-28 | 2005-03-16 | 北京大学 | NEMS piezoresistive pressure sensor chip and its making process |
| US6739199B1 (en) * | 2003-03-10 | 2004-05-25 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for MEMS device with strain gage |
| CN101738280B (en) * | 2008-11-24 | 2011-08-17 | 河南理工大学 | Mems pressure sensor and manufacturing method thereof |
| CN104776951B (en) * | 2015-03-30 | 2017-06-20 | 中国电子科技集团公司第三十八研究所 | A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof |
| CN105716750B (en) * | 2016-01-20 | 2019-03-22 | 北京大学 | A kind of MEMS piezoresistive pressure sensor and preparation method thereof |
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