CN108592965A - Flexible piezoresistance type microcantilever beam sensor and preparation method thereof - Google Patents
Flexible piezoresistance type microcantilever beam sensor and preparation method thereof Download PDFInfo
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- CN108592965A CN108592965A CN201810361327.XA CN201810361327A CN108592965A CN 108592965 A CN108592965 A CN 108592965A CN 201810361327 A CN201810361327 A CN 201810361327A CN 108592965 A CN108592965 A CN 108592965A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/54—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using means specified in two or more of groups G01D5/02, G01D5/12, G01D5/26, G01D5/42, and G01D5/48
- G01D5/56—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using means specified in two or more of groups G01D5/02, G01D5/12, G01D5/26, G01D5/42, and G01D5/48 using electric or magnetic means
Abstract
The present invention relates to a kind of flexible piezoresistance type microcantilever beam sensor, the flexibility piezoresistance type microcantilever beam is made of force sensing resistance, flexible force sensing resistance up-protective layer and force sensing resistance lower protective layer.The flexibility piezoresistance type microcantilever beam sensor is at least equipped with one group of Wheatstone bridge sensing unit, the Wheatstone bridge sensing unit is made of four identical force sensing resistances and four micro-cantilevers, micro-cantilever surface deposition described in two of which has gold thin film to be used as measuring micro-cantilever, other two micro-cantilever, which is used as, refers to micro-cantilever, and four micro-cantilevers are arranged with a micro reaction pool.The present invention is due to using flexible force sensing resistance up-protective layer material, avoiding the fracture of micro-cantilever in modification and detection process.Due to, as force sensitive resistive material, ensure that the sensitivity of micro-cantilever beam sensor using p-type monocrystalline silicon.Flexibility piezoresistance type microcantilever beam sensor proposed by the present invention can realize the highly sensitive and high specific detection to biology, chemical molecular.
Description
Technical field
The present invention relates to a kind of sensors and preparation method thereof, especially with regard to a kind of applied to the soft of Biochemical Information detection
Property piezoresistance type microcantilever beam sensor, belongs to micro electronmechanical sensor-based system field.
Background technology
Sensing technology obtains one of the important means of natural information as the mankind, in basic scientific research and modern project skill
In occupation of very important status in art.Its sense organ as modern information technologies, with computer manufacture technology, microelectric technique
The four big pillars for becoming modern information industry jointly with the communication technology, play increasingly in the big data information age of today
Important role.Important component one of of the biochemical sensor as sensing technology is protected in basic scientific research, national defense safety
Barrier, environmental pollution monitoring, public food safety and medical conditions diagnosis etc. have a wide range of applications.
Micro-cantilever beam sensor has the characteristics that high sensitivity, high specific, real-time response and is easily integrated, and is answered extensively
Sensing detection for biological and chemical substance.Although traditional silicon-based micro-cantilever sensor has very high sensitivity,
It is to be easy embrittlement since the monocrystalline silicon and earth silicon material Young's modulus itself of preparation silicon-based micro-cantilever sensor are higher,
So that silicon-based micro-cantilevers are susceptible to the case where micro-cantilever fracture in use.In order to improve micro-cantilever beam sensor
Reliability, and ensure its sensitivity, the present invention proposes a kind of flexible piezoresistance type microcantilever beam sensor, which uses high
Up-protective layer of molecule aggregation material --- the polyimides as force sensing resistance, and force sensing resistance still uses high piezoresistance coefficient
P-type single crystal silicon material.Compared with traditional silicon-based micro-cantilever sensor, the Shandong of this flexibility piezoresistance type microcantilever beam sensor
Stick is splendid, largely avoids the fracture of micro-cantilever in modification and detection process, monocrystalline silicon force sensing resistance application
It ensure that the sensitivity of micro-cantilever simultaneously.Meanwhile the preparation process of flexible piezoresistance type microcantilever beam sensor is simple, cost
It is low, it is easy to accomplish it is integrated with reading circuit, it can be widely applied to the highly sensitive detection of biology, chemical substance.
Invention content
It is sensitive the purpose of the present invention is on the basis of existing silicon substrate piezoresistance type microcantilever beam sensor, providing a kind of measurement
Spend the flexible piezoresistance type microcantilever beam sensor and its making side that higher, robustness is more preferable, preparation process is simple, is easily integrated
Method.
To achieve the above object, the present invention takes following technical scheme：A kind of flexibility piezoresistance type microcantilever beam sensor, it
At least equipped with one group of Wheatstone bridge sensing unit, the Wheatstone bridge sensing unit is by four identical quick electricity of power
Resistance and four micro-cantilevers are constituted, and four identical force sensing resistances are located on four micro-cantilevers, two of which institute
It states micro-cantilever to be used as measuring micro-cantilever, other two micro-cantilever is used as referring to micro-cantilever, measures micro-cantilever surface
Be deposited with gold thin film, for modifying biochemical sensitive membrane, four micro-cantilevers are arranged with a micro reaction pool, micro-cantilever and
Micro reaction pool is prepared on a silicon substrate.The micro-cantilever is 50~300 μm long, 10~100 μm wide, thick 0.5~2 μm of square
Shape.
The flexible piezoresistance type microcantilever beam is by force sensing resistance, force sensing resistance up-protective layer and force sensing resistance lower protective layer
Composition, the force sensitive resistive material are p-type monocrystalline silicon, and the resistance value of force sensing resistance, the quick electricity of power are adjusted by ion implanting
It is 20~120 μm of length to hinder size, 5~50 μm wide.The force sensing resistance up-protective layer is flexible polymer material, the quick electricity of power
Resistance lower protective layer material is silica, can be the oxygen buried layer of soi wafer.The flexible polymer material can be polyamides Asia
Amine, the polyimides are prepared by spin coating, front baking and high temperature curing process, and the thickness of the polyimides is 1~5 μm.Institute
It is biology, the chemically reactive molecule material in gold thin film surface modification to state biochemical sensitive membrane.The flexibility piezoresistance type microcantilever beam
Sensor and micro reaction pool are formed simultaneously using deep reaction ion etching technology etching silicon substrate, and the micro reaction pool is used for
Import biochemical reagents.
The flexible piezoresistance type microcantilever beam sensor, is made of soi wafer, it includes following preparation process：
1, hot after carrying out routine cleansing operation using the soi wafer with silica oxygen buried layer, single-crystal silicon device layer
Oxidation forms mask of the thin silicon dioxide layer as ion implanting, to reduce the damage of ion implanting in single crystal silicon device layer surface
Wound.Phosphonium ion injection is carried out to single-crystal silicon device layer, the N+ protection rings of force sensing resistance is formed, reduces the leakage current of force sensing resistance.
First time photoetching is carried out to chip with mask plate, single crystal silicon device layer pattern is defined, passes through reactive ion etching single crystal silicon device
Layer forms monocrystalline silicon force sensing resistance and electric interconnecting pins figure, as shown in Figure 5 a.
2, second of photoetching is carried out to the soi wafer through step 1 with mask plate, boron ion is carried out to monocrystalline silicon force sensing resistance
Injection, the quick resistance of adjustment force, as shown in Figure 5 b.
3, third time photoetching is carried out to the soi wafer through step 2 with mask plate, to monocrystalline silicon electricity interconnecting pins carry out phosphorus from
Son injection forms electric interconnecting pins.Then rapid thermal annealing is carried out, activates the boron and phosphonium ion of injection, as shown in Figure 5 c.
4, low-pressure chemical vapor phase deposition deposition techniques layer of silicon dioxide is utilized to the soi wafer through step 3, uses mask plate
Four mask is carried out to soi wafer, buffered hydrofluoric acid corrodes silica, forms metal contact hole, as fig 5d.
5, to the soi wafer sputtered aluminum silicon through step 4, the 5th photoetching then is carried out to soi wafer with mask plate, wet
Method carries out high temperature alloy after corroding aluminium silicon to aluminium silicon, forms metal pad, as depicted in fig. 5e.
6, the soi wafer spin-on polyimide through step 5 is such as schemed through hot plate front baking and high annealing cure polyimide
Shown in 5f.
7, chrome gold is sputtered to the soi wafer through step 6, the 6th photoetching is carried out to soi wafer with mask plate, wet method is rotten
Erosion is golden, then wet etching chromium, as shown in fig. 5g.
8, the 7th photoetching, oxygen plasma etch polyimides, shape are carried out to the soi wafer through step 7 with mask plate
It is shaped as force sensing resistance up-protective layer figure.The 8th photoetching is carried out to soi wafer with mask plate, buffered hydrofluoric acid corrodes dioxy
SiClx, reactive ion etching silica define micro reaction pool etched features, as shown in figure 5h.
9, scribing is carried out to the soi wafer through step 8, carries out anisotropy and isotropism deep reaction ion etching silicon lining
Bottom forms micro reaction pool while discharging micro-cantilever.Then it is single micro-cantilever beam sensor core by soi wafer sliver
Piece.
10, biochemical to the progress of micro-cantilever beam sensor chip sensitive film modified, form biochemistry measuring micro-cantilever surface
Sensitive membrane.
The silica oxygen buried layer thickness of wherein step 1, soi wafer is 200~800nm, and single crystal silicon device layer thickness is
100~500nm.
Wherein step 1 carries out thermal oxide to form the thickness of thin silicon dioxide layer being 10~100nm in silicon chip surface.
Wherein step 1 carries out single-crystal silicon device layer a concentration of 5 × 1012cm-2~5 × 1014cm- of phosphonium ion injection
2, Implantation Energy is 50keV~200keV.
Wherein step 2 carries out single-crystal silicon device layer a concentration of 5 × 1013cm-2~5 × 1015cm- of boron ion injection
2, Implantation Energy 20keV~80keV.
Wherein step 3 carries out single-crystal silicon device layer a concentration of 5 × 1014cm-2~5 × 1016cm- of boron ion injection
2, Implantation Energy 30keV~80keV.
Wherein step 6, when spin-on polyimide, spin coating rotating speed is 300~3000rpm, and the time is 5~300 seconds.
Wherein step 6, when hot plate front baking, temperature is 100~200 DEG C, and the time is 150~200 seconds.
Wherein step 6, when using annealing furnace cure polyimide, temperature is 100~400 DEG C, and the time is 10~40 minutes.
Wherein step 9, deep reaction ion etching anisotropic etching silicon substrate time are 10~60 minutes, deep reactive ion
It is 10~60 minutes to etch the isotropic etching silicon substrate time.
The invention adopts the above technical scheme, which has the following advantages：1, the present invention is due to the use of flexible polymer
Material can be polyimides, as micro-cantilever force sensing resistance up-protective layer, have compared with silicon-based micro-cantilevers better
Robustness situations such as being not susceptible to fracture in actual application, can preferably cope with biology, the chemistry of complex condition
Sensing demand.2, four resistance in Wheatstone bridge are due to being separately positioned on four micro-cantilevers by the present invention, and by two
A micro-cantilever is as micro-cantilever is measured, and force sensing resistance thereon is as measurement resistance, remaining two micro-cantilever conducts
With reference to micro-cantilever, resistance thereon is used as with reference to resistance, and in practical measurement process, external environment influence can act on simultaneously
With reference to micro-cantilever and micro-cantilever is measured, therefore the differential voltage signal of Wheatstone bridge can reduce external environmental noise pair
Micro-cantilever exports the influence of result, while reducing the null offset of Wheatstone bridge.3, present invention oxygen hot before ion implantation
Change and form one layer of thin silicon dioxide, is used as the mask of ion implanting, reduces damage of the ion implanting to lattice.In force sensing resistance
Periphery carries out phosphonium ion injection, forms N+ protection rings, can reduce the leakage current of force sensing resistance, to effectively improve micro-cantilever
The stability of beam sensor output signal.4, present invention employs anisotropy and isotropism reaction ion deep etching technique to carve
Lose silicon substrate, discharge micro-cantilever, while preparing the micro reaction pool for biochemical reaction, the release process it is possible to prevente effectively from
Pollution of the damage and wet etching metal ion in solution that wet etching release micro-cantilever is brought to force sensing resistance,.
Description of the drawings
Fig. 1 is the flexible piezoresistance type microcantilever beam dimensional structure diagram of the present invention
Fig. 2 is the wheatstone bridge configuration schematic diagram of the present invention
Fig. 3 is that the flexible pressure resistance type of the present invention one measures micro-cantilever cross-sectional view
Fig. 4 is that the flexible pressure drag of the present invention one declines with reference to cantilever beam cross-sectional view
Fig. 5 a~5h are that flexibility of the present invention prepares piezoresistance type microcantilever beam process flow diagram
Fig. 6 is the flexible piezoresistance type microcantilever beam stereoscan photograph for preparing completion
Specific implementation mode
Fig. 1 illustrates the basic structure of the flexible piezoresistance type microcantilever beam sensor of the present invention, it is at least equipped with one group
Wheatstone bridge sensing unit (Fig. 2), the Wheatstone bridge sensing unit is by four identical force sensing resistances 1 and four
Micro-cantilever 2 is constituted, and four identical force sensing resistances 1 are located on four micro-cantilevers 2, micro- outstanding described in two of which
Arm beam is used as measuring micro-cantilever 2-1, other two micro-cantilever is used as referring to micro-cantilever 2-2, measures micro-cantilever 2-1 tables
Face is deposited with gold thin film 3, and for being modified with biochemical sensitive membrane 4, four micro-cantilevers 2 are arranged with a micro reaction pool 5, micro-
Cantilever beam and micro reaction pool are prepared on silicon substrate 6.Fig. 3 is a measurement micro-cantilever 2-1 sectional structure chart, the measurement
Micro-cantilever is made of force sensing resistance 1, force sensing resistance up-protective layer 7, force sensing resistance lower protective layer 8 and gold thin film 3, and the power is quick
Resistance 1 is prepared by p-type monocrystalline silicon, and the resistance value of force sensing resistance 1 is adjusted by ion implanting.The force sensing resistance up-protective layer 7
Material is flexible polymer material, can be polyimides, and 8 material of force sensing resistance lower protective layer is silica oxygen buried layer.Fig. 4
It is one and refers to micro-cantilever 2-2 sectional structure charts, the reference micro-cantilever is by force sensing resistance 1, force sensing resistance up-protective layer 7
It is formed with force sensing resistance lower protective layer 8.Micro-cantilever 2-1 and reference micro-cantilever 2-2 is measured the difference is that its surface
It is deposited with gold thin film 3, for modifying biochemical sensitive membrane 4.
The surface stress that micro-cantilever is researched and analysed using finite element analysis software is distributed, and analysis result shows micro-cantilever
The larger region of surface stress is located at the clamped end of micro-cantilever, accounts between 1/3 to the 1/2 of entire beam length.Therefore each
Ion implanting is carried out at the clamped end of micro-cantilever and forms four identical force sensing resistances 1, and then constitutes a favour
Stone electric bridge sensing unit.Why designed without designing on a silicon substrate on reference to micro-cantilever with reference to force sensing resistance 1-1,
It is to balance the noise and mechanical oscillation that environmental factor is brought, such environmental factor makes measurement force sensing resistance 1-2 that shape occur
After change, the additional signal of formation can be filtered out by reference to micro-cantilever 2-2.Flexible piezoresistance type microcantilever beam sensor
It can be by the size of change micro- force sensing resistance 1 and cantilever beam 2, to change the sensitivity of sensing unit in design.It is described soft
Property piezoresistance type microcantilever beam size can be designed as 50~300 μm long, 10~100 μm wide, thick 0.5~2 μm of rectangle.Four
The size of force sensing resistance can be designed as 20~120 μm of length, 5~50 μm wide.
By the mesh that can reach detection different material in the different biochemical sensitive membrane 4 of measurement micro-cantilever 2-1 surface modifications
's.Such as：It is to be checked in bioactive molecules probes such as surface modification nucleic acid aptamer or the antibody for measuring micro-cantilever 2-1
After survey albumen is combined with bioactive molecule of the modification on measuring micro-cantilever 2-1, due to electrostatic force, aquation, sky
Between steric effect, Van der Waals force, measure micro-cantilever 2-1 surfaces hydrophobe property change and Molecular Adsorption reaction after lead
The effects such as the molecular compositing of cause, a stress difference can be formed by measuring the upper and lower surface of micro-cantilever 2-1, cause to measure micro- outstanding
Arm beam 2-1 is deformed upon, and is changed so as to cause the resistance value for measuring force sensing resistance 1 on micro-cantilever 2-1.And refer to micro-cantilever
Bioactive molecule is not decorated in the surface of beam 2-2, therefore will not would not also be deformed upon with protein binding to be detected.Institute
It states Wheatstone bridge to power using constant pressure source, due to positioned at the resistance value hair for measuring force sensing resistance 1-2 measured on micro-cantilever 2-1
Changing so that the output voltage of Wheatstone bridge changes, to realize the sensing detection of test substance.
Deflection sensitivity is defined as the ratio of the variation of force sensing resistance resistance value and the free end vertical displacement variation of micro-cantilever,
That is Δ z-1 Δs R/R.When the free end of micro-cantilever is by directed force F, micro-cantilever will deform upon, and surface is answered
Power distribution is determined that the surface stress σ that micro-cantilever can be obtained according to theory deduction is hanging down with it by torque M and rotary inertia I
Histogram shifts up the relationship of Δ z, and (wherein E is the elasticity modulus of micro-cantilever, and the length of micro-cantilever is l, width w, thick
Degree is t, and the length of force sensing resistance is L)：
When monocrystalline silicon force sensing resistance is by longitudinal force, the opposite variation of resistance value is：
Wherein, π is longitudinal piezoresistance coefficient.The deflection sensitivity that micro-cantilever can be obtained by formula (1) and (2) is：
Micro-cantilever beam sensor carries out signal-obtaining using Wheatstone bridge, and Wheatstone bridge input voltage 9 is Vin.When
After measurement micro-cantilever 2-1 is deformed upon, change positioned at the force sensing resistance 1-2 resistance values measured on micro-cantilever 2-1, i.e.,
Become R+ Δs R.And do not deformed upon with reference to micro-cantilever 2-2, force sensing resistance 1-1 resistance values thereon are still R, at this time favour stone electricity
The output voltage Vout of bridge is：
Since the variation delta R of force sensing resistance 1 is far smaller than initial value R, formula (4) can also be write as：
Therefore the output voltage Vout of Wheatstone bridge is directly proportional to Δ R/R.
Here is a preparation embodiment of the flexible piezoresistance type microcantilever beam sensor of the present invention, but not in any way
It limits the scope of the invention：
1, it uses with 14 thickness of silica oxygen buried layer as 400nm, 12 thickness of single-crystal silicon device layer is the SOI of 340nm
Silicon chip, after carrying out routine cleansing operation, thermal oxide soi wafer forms thin silicon dioxide layer 13 in single crystal silicon device layer surface,
As the mask of ion implanting, to reduce the damage of ion implanting.Phosphonium ion injection is carried out on 12 surface of single-crystal silicon device layer,
Implantation concentration is 5 × 1013cm-2, Implantation Energy 100keV, defines the N+ protection rings of force sensing resistance, reduces force sensing resistance
Leakage current.First time photoetching is carried out to soi wafer with mask plate, 12 figure of single-crystal silicon device layer is defined, is carved by reactive ion
Single-crystal silicon device layer 12 is lost, forms the figure of monocrystalline silicon force sensing resistance 16 and monocrystalline silicon electricity interconnecting pins 17, as shown in Figure 5 a.
2, second of photoetching is carried out to the soi wafer through step 1 with mask plate, to monocrystalline silicon force sensing resistance 16 carry out boron from
Son injection, the quick resistance of adjustment force, implantation concentration be 4 × 1014cm-2, Implantation Energy 40keV, as shown in Figure 5 b.
3, third time photoetching is carried out to the soi wafer through step 2 with mask plate, phosphorus is carried out to monocrystalline silicon electricity interconnecting pins 17
Ion implanting, implantation concentration are 8 × 1015cm-2, Implantation Energy 50keV, and the monocrystalline silicon electrical interconnection for forming ion heavy doping is drawn
Line 17.Then rapid thermal annealing is carried out, activates the boron and phosphonium ion of injection, as shown in Figure 5 c.
4, the soi wafer through step 3 is formed by the silicon dioxide layer that low-pressure chemical vapor phase deposition thickness is 300nm
Monocrystalline silicon electricity interconnecting pins protective layer 18.Four mask is carried out to soi wafer with mask plate, buffered hydrofluoric acid corrodes 300nm
Silicon dioxide layer, formed metal contact hole, as fig 5d.
5, to the soi wafer sputtered aluminum silicon through step 4, then thickness 800nm carries out with mask plate to soi wafer
Five photoetching carry out high temperature alloy to aluminium silicon, form metal pad 19, as depicted in fig. 5e after wet etching aluminium silicon.
6, to the soi wafer spin-on polyimide through step 5, first turned 5 seconds with 500rpm, then kept for 60 seconds with 2700rpm.
Through hot plate front baking, pre-bake temperature is 140 DEG C, and the front baking time is 180 seconds.Again through hot setting polyimides, high temperature anneal temperature
It it is 350 DEG C, hardening time is 30 minutes, forms the polyimide covercoat 20 that thickness is 1 μm, as shown in figure 5f.
7, chrome gold is sputtered to the soi wafer through step 6, the 6th photoetching then is carried out to soi wafer with mask plate, it is wet
Method corrosion gold, then wet etching chromium, forms gold thin film 21, as shown in fig. 5g.
8, the 7th photoetching is carried out to the soi wafer through step 7 with mask plate, oxygen plasma etches polyimides, is formed
Micro- force sensing resistance up-protective layer figure.The 8th photoetching is carried out to soi wafer with mask plate, buffered hydrofluoric acid corrodes silica
Oxygen buried layer defines micro reaction pool 22, as shown in figure 5h.
9, scribing is carried out to the soi wafer through step 8.Then it through anisotropy deep reaction ion etching silicon substrate, then passes through
Isotropism deep reaction ion etching silicon substrate to flexible piezoresistance type microcantilever beam discharges.
10, it is single flexible piezoresistance type microcantilever beam sensor chip by soi wafer sliver, declines to single flexible pressure drag
Cantilever beam sensor chip carries out biochemical modification, and biochemical sensitive membrane is formed measuring micro-cantilever surface.
In above-described embodiment, the quantity of micro-cantilever can need to be arranged according to measure the item, but its quantity should be four
Integral multiple, such as 8,12, i.e. four micro-cantilevers are one group, and four force sensing resistances on four micro-cantilevers form one
Independent micro-cantilever sensing unit.If multigroup micro-cantilever is arranged, array micro-cantilever beam sensor is formed, can surveyed
Different biochemical sensitive membranes is modified on amount micro-cantilever, to realize the parallel detection to different biologies, chemical molecular.
Claims (8)
1. a kind of flexibility piezoresistance type microcantilever beam sensor, the flexibility piezoresistance type microcantilever beam sensor is at least equipped with one group
Wheatstone bridge sensing unit, the Wheatstone bridge sensing unit is by four identical force sensing resistances and four micro-cantilevers
Beam is constituted, and four identical force sensing resistances are located on four micro-cantilevers, and micro-cantilever described in two of which is used as
Micro-cantilever is measured, measuring micro-cantilever surface deposition has gold thin film, for modifying biochemical sensitive membrane, other two micro-cantilever
As with reference to micro-cantilever, four micro-cantilevers are arranged with a micro reaction pool, and the micro-cantilever and micro reaction pool are equal
On silicon substrate.The flexibility piezoresistance type microcantilever beam sensor, it is characterised in that：The micro-cantilever by force sensing resistance,
Flexible force sensing resistance up-protective layer and force sensing resistance lower protective layer composition.
2. flexibility piezoresistance type microcantilever beam sensor as described in claim 1, it is characterised in that：The force sensitive resistive material is
The resistance value of p-type monocrystalline silicon, the p-type monocrystalline silicon force sensing resistance is adjusted by boron ion injection, to improve piezoresistance coefficient, is reduced
Thermal drift.
3. force sensing resistance as claimed in claim 2, it is characterised in that：Thermal oxide is formed the force sensing resistance before ion implantation
A thin layer silica is used as the mask of ion implanting, to reduce damage of the ion implanting to lattice.Outside the force sensing resistance
A phosphonium ion injection is carried out, N+ protection rings are formed to force sensing resistance, the leakage current of force sensing resistance can be reduced.
4. flexibility piezoresistance type microcantilever beam sensor as described in claim 1, it is characterised in that：It is protected on the force sensing resistance
Layer can use flexible polymer material, and the flexible polymer material can be polyimides, and the polyimides passes through rotation
It applies, prepared by front baking and high temperature curing process.
5. flexibility piezoresistance type microcantilever beam sensor as described in claim 1, it is characterised in that：It is protected under the force sensing resistance
Layer is silica, and the silica can be the silica oxygen buried layer of soi wafer.
6. flexibility piezoresistance type microcantilever beam sensor as described in claim 1, it is characterised in that：It is described biochemistry sensitive membrane be
Biology, the chemically reactive molecule material of gold thin film surface modification.
7. flexibility piezoresistance type microcantilever beam sensor as described in claim 1, it is characterised in that：The flexibility pressure drag declines outstanding
Arm beam and micro reaction pool are formed using deep reaction ion etching technology etching silicon substrate, and the micro reaction pool is for importing quilt
Detect biochemical substances.
8. flexibility piezoresistance type microcantilever beam sensor as described in claim 1, may be used soi wafer making, feature exists
In it include following preparation process：
(1) using the soi wafer with silica oxygen buried layer, single-crystal silicon device layer, the hot oxygen after carrying out routine cleansing operation
Change, mask of the thin silicon dioxide layer as ion implanting is formed in single crystal silicon device layer surface, to reduce the damage of ion implanting.
Phosphonium ion injection is carried out to single-crystal silicon device layer, the N+ protection rings of force sensing resistance is formed, reduces the leakage current of force sensing resistance.With covering
Film version carries out first time photoetching to chip, defines single crystal silicon device layer pattern, passes through reactive ion etching single-crystal silicon device layer, shape
At monocrystalline silicon force sensing resistance and electric interconnecting pins figure.
(2) second of photoetching is carried out to the soi wafer through step 1 with mask plate, boron ion note is carried out to monocrystalline silicon force sensing resistance
Enter, the quick resistance of adjustment force.
(3) third time photoetching is carried out to the soi wafer through step 2 with mask plate, phosphonium ion is carried out to monocrystalline silicon electricity interconnecting pins
Injection forms electric interconnecting pins.Then rapid thermal annealing is carried out, the boron and phosphonium ion of injection are activated.
(4) low-pressure chemical vapor phase deposition deposition techniques layer of silicon dioxide is utilized to the soi wafer through step 3, with mask plate pair
Soi wafer carries out four mask, and buffered hydrofluoric acid corrodes silica, forms metal contact hole.
(5) to the soi wafer sputtered aluminum silicon through step 4, the 5th photoetching then is carried out to soi wafer with mask plate, in wet method
High temperature alloy is carried out to aluminium silicon after corroding aluminium silicon, forms metal pad.
(6) polyimides force sensing resistance is formed through hot plate front baking and hot setting to the soi wafer spin-on polyimide through step 5
Up-protective layer.
(7) chrome gold is sputtered to the soi wafer through step 6, the 6th photoetching, wet etching is carried out to soi wafer with mask plate
Gold, then wet etching chromium.
(8) the 7th photoetching is carried out to the soi wafer through step 7 with mask plate, oxygen plasma etch polyimides forms power
Quick resistance up-protective layer figure.The 8th photoetching is carried out to soi wafer with mask plate, buffered hydrofluoric acid corrodes silica, instead
Ion etching silica is answered, micro reaction pool etched features are defined.
(9) to after the soi wafer of step 8 carries out scribing, carrying out anisotropy and isotropism deep reaction ion etching silicon lining
Bottom forms micro reaction pool while discharging micro-cantilever.Then it is single micro-cantilever beam sensor core by soi wafer sliver
Piece.
(10) biochemical to the progress of micro-cantilever beam sensor chip sensitive film modified, it is formed on measurement micro-cantilever surface biochemical sensitive
Film.
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| CN112461413A (en) * | 2020-11-15 | 2021-03-09 | 沈阳工业大学 | Integrated micro-cantilever detection chip and preparation method thereof |
| CN112834091A (en) * | 2020-12-31 | 2021-05-25 | 苏州大学 | Micro-force sensor for micro-assembly and piezoelectric ceramic driving micro-gripper |
| CN113091969A (en) * | 2021-04-08 | 2021-07-09 | 吉林大学 | Bionic flexible cantilever beam array sensor and preparation method thereof |
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