CN101211861A - Integrated micro-sensor preparation method - Google Patents
Integrated micro-sensor preparation method Download PDFInfo
- Publication number
- CN101211861A CN101211861A CNA2006101707246A CN200610170724A CN101211861A CN 101211861 A CN101211861 A CN 101211861A CN A2006101707246 A CNA2006101707246 A CN A2006101707246A CN 200610170724 A CN200610170724 A CN 200610170724A CN 101211861 A CN101211861 A CN 101211861A
- Authority
- CN
- China
- Prior art keywords
- layer
- preparation
- silicon
- etching
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a method for making an integrated micro-sensor based on SOI technology, which belongs to a field of an MEMS and an integrated circuit technology. Based on Post-CMOS or Intermediate-CMOS technology, the method uses SOI COMS technology and SOI micromachining technology to realize a monolithic integration of the micro-sensor array and circuits of signal conditioning on an SOI silicon chip. The invention has the advantages of simple technics, low processing cost, small volume and high reliability. The integrated sensor has wide application prospect in fields of medicine, environment, food and military affairs.
Description
Technical field
The invention belongs to micro-electro-mechanical systems unify technical field of integrated circuits, particularly a kind of preparation method of integrated microsensor.
Background technology
The MEMS transducer has characteristics such as volume is little, easy of integration, cost is low, power consumption is little, speed is fast, sensitivity height, becomes the main flow direction of present MEMS device development.In recent years, pursue along with the raising of semiconductor machining level and to the design of transducer low-power consumption, high s/n ratio and high integration, people begin to carry out the research of system-on-a-chip (SOC).SOC is IC technology and the MEMS aftertreatment technology that utilizes standard, realizes simple integrated microsensor on single-chip.Integrated sensor mainly comprises microsensor array, sensor drive driving circuit, multiple signals selector, signal conditioning circuit and D/A converting circuit, present preparation integrated microsensor method comprises dual mode, the one, directly on body silicon, carry out integrated manufacturing, also having a kind of is that transducer prepares on the soi wafer device layer, and cmos circuit prepares on body silicon.
Owing to adopt SOI CMOS technology and adopt traditional body silicon to prepare cmos circuit and compare and have following characteristics: no latch-up; The source, to omit living electric capacity little; Be easy to form shallow junction and full dielectric isolation; Technology is more simple; Suppress short-channel effect preferably; Low-voltage and low-power dissipation; Good anti-irradiation ability etc.Therefore, adopting soi wafer to prepare integrated microsensor is a direction that is worth research.
Summary of the invention
The purpose of this invention is to provide a kind of method at soi wafer realization integrated microsensor, this preparation technology is simple, microsensor function admirable, the circuit performance height of preparation.
Above-mentioned purpose of the present invention is achieved by the following technical solutions:
A kind of preparation method of integrated microsensor comprises:
(1) on soi wafer, carry out photoetching and etching, the active area of definition cmos circuit and the device region of transducer, thus the place oxide layer of growing afterwards forms the silicon island, removes the silicon nitride on the soi wafer then;
(2) N
-And P
-Ion injects, and regulates the threshold voltage of NMOS and PMOS pipe, and the resistance of Wheatstone bridge is formed in preparation;
(3) deposit polysilicon and ion inject, definition polysilicon gate, polysilicon lead-in wire and polysilicon resistance;
(4) NMOS and PMOS pipe are carried out injection of source-drain area ion and the injection of body contact zone;
(5) depositing metal behind the definition contact hole, dry etching or wet etching metal, the metal lead wire of definition circuit and transducer;
(6) photoetching and definition form the microflute figure of sensor construction, and utilize passivation layer, device layer and the oxygen buried layer in RIE technology etching groove district;
(7) silicon in the isotropic etching microflute utilizes oxygen buried layer to stop etching, the sensor construction that obtains discharging.
In the step 1, the requirement of device is selected the soi wafer of corresponding device layer thickness and doping type according to transducer.
In the step 4, make that pressure drag cantilever beam, two strutbeam, four ends prop up admittedly, the force sensing resistance district of square diaphragm or circular film.
After the step 5, will and define the gold thin film of one deck nano thickness, be used for as intermediate layer assembling biomolecule at the measuring transducer surface deposition.
After the step 7, biology, chemical sensitive layer are set at the body structure surface that discharges.
In the step 7, adopt isotropic dry etch or wet etching body silicon, dry etching is inductively coupled plasma (ICP) deep etching technology, wet etching mainly comprises KOH, TMAH corrosion silicon, when the etching of body silicon or the oxygen buried layer of corrosion under reaching device layer since the selection of silicon/oxidative silicon than and stop substantially.
The present invention has following characteristics:
Select the manufacturing materials of the device layer of soi wafer as sensor array, both can utilize the good electricity of single crystal silicon material, mechanics, thermal property to prepare high performance sensor component, can utilize the oxygen buried layer of soi wafer to discharge movable sensor construction again, simplified preparation technology, be particularly useful for making ultra-thin little/the nano cantilever transducer.Secondly, select the device layer of soi wafer to prepare the SOI cmos circuit, compare the body silicon CMOS circuit, the SOI cmos circuit has no latch-up; The source, to omit living electric capacity little; Be easy to form shallow junction and full dielectric isolation; CMOS technology is more simple; Suppress short-channel effect preferably; Low-voltage and low-power dissipation; Good advantages such as anti-irradiation ability.At last, the present invention adopts Post-CMOS or Intermediate-CMOS technology, microsensor array, sensor drive driving circuit, multiple signals selector, signal conditioning circuit, D/A converting circuit are integrated on the same soi wafer, realize that the amplification of signal and multiple spot detect.Integrated design promptly reduced system volume, eliminated the ghost effect that the interconnection of transducer and circuit lead causes, simultaneously based on the integrated performance of having simplified preparation technology, having improved transducer and cmos circuit of the transducer of SOI.
Description of drawings
Fig. 1 is an integrated microsensor preparation technology schematic flow sheet of the present invention.
Embodiment
Describe of the present invention one in detail below in conjunction with accompanying drawing and optimize embodiment, but the scope that does not limit the present invention in any way.
Employing has the single P of throwing type soi wafer 3 of oxygen buried layer 1 and single-crystal silicon device layer 2, is 200nm according to transducer to the device layer thickness that requires soi wafer of device, and oxygen buried layer thickness is that 400nm (sees Fig. 1-a);
After silicon chip cleans through routine, the thick thermal oxide layer and 1100 of growth 30nm
Thick silicon nitride layer can be used for follow-up injection as the silica of adhesion layer and stops that silicon nitride is as the mask of place oxide layer.
Photoetching for the first time, the active area 4 of definition cmos circuit and the device region 5 of transducer, thus the place oxide layer of growing afterwards forms the silicon island, removes silicon nitride on the soi wafer then and (sees Fig. 1-b);
Carry out photoetching with second and the 3rd mask respectively, carry out after the photoetching phosphonium ion (65kev, 4.9e12) and the boron ion (35kev 2.5e12) injects and forms N-district 6 and P-district 7, and the threshold voltage that is used to adjust SOI CMOS pipe (is seen Fig. 1-c);
Remove the silicon dioxide adhesion layer, thermal oxidation generates 200 again
Thick gate oxide.Adopt the polysilicon membrane of LPCVD deposition techniques 400nm, inject phosphonium ion (65kev, 5e15) carrying out polysilicon mixes in advance, be convenient to the back and form the N+ polysilicon gate, with the 4th mask photoetching, etch polysilicon in inducing coupling plasma system (ICP), definition polysilicon gate 8, polysilicon lead-in wire and polysilicon resistance etc.For improving the ion distribution in the polysilicon, polysilicon is at 960 ℃ of oxidation 15min, and annealing simultaneously (is seen Fig. 1-d);
Use the 5th and the 6th mask photoetching respectively, to the source-drain area of NMOS and PMOS carry out phosphonium ion 10 (65kev, 2e15) and boron ion 9 (35kev 2e15) injects, and simultaneously body contact area, force sensing resistance district is injected, and improves the body contact resistance.In the RTA system, rapid thermal treatment 10sec under 1000 ℃ of conditions improving the source-drain area ion distribution, has also adjusted the force sensing resistance zone of transducer simultaneously and (has seen Fig. 1-e);
Adopt LPCVD deposition techniques 350nm silicon dioxide passivation layer 11, and fine and close annealing 10min (sees Fig. 1-f) under 950 ℃ of conditions;
With the 7th mask photoetching, the definition contact hole, etching silicon dioxide passivation layer in reactive ion etching system (RIE), formation contact hole 12 and microflute 13 (are seen Fig. 1-g);
Splash-proofing sputtering metal Ti (500-700
)/Al (1 μ m) back defines metal lead wire 14, AME etching Ti and Al with the 8th mask photoetching.Alloy 30min under 450 ℃ of conditions (sees Fig. 1-h) thereby form ohmic contact;
With the 9th mask photoetching, define microflute 15 zones again, and be mask RIE etching Si device layer and oxygen buried layer with the photoresist.Silicon layer in the ICP system under the isotropic etching micro-cantilever 16 discharges micro-cantilever.Because the width of beam is 50 μ m, consider that the ICP etch rate is 1.5 μ m/min, so being about 15 minutes, etch period (sees Fig. 1-i);
If this integrated sensor is applied to the sensing detection of biomolecule, will before discharging cantilever beam, carry out a photoetching, this step will be used for as intermediate layer assembling biomolecule in the gold thin film 17 of measuring transducer superficial growth one deck nano thickness;
Adopt isotropic dry etch or wet etching body silicon, dry etching is inductively coupled plasma (ICP) deep etching technology, wet etching mainly comprises KOH, TMAH corrosion silicon, when the etching of body silicon or the oxygen buried layer of corrosion under reaching device layer since the selection of silicon/oxidative silicon than and stop substantially, therefore the suspension device architecture that obtains discharging (is seen Fig. 1-j).
At the body structure surface that discharges biology, chemical sensitive layer are set, can realize that little integrated biochemical transducer (sees Fig. 1-k).
The present invention can be integrated in microsensor array and sensor circuit on the same chip by SOI CMOS and SOI micromachining technology.And microsensor array element structure can be that cantilever beam structure, two girder constructions, four ends prop up structures such as formula, quadrangular membrane chip, circular membrane chip admittedly, each cellular construction can be a microsensor of measuring information such as physics, chemistry, biology, each sensor unit in the sensor array can be measured identical responsive amount, also can measure different responsive amounts.
On no matter integrated microsensor that the present invention proposes and technology thereof are applied in physics, chemistry, still biological information detects, all will reducing device size, raising device sensitivity and realize playing a significant role on the Intelligence of Sensors.Integrated sensor is in environmental monitoring, and fields such as clinical diagnosis and treatment, new drug development, food security, industrial processes control, military affairs are with a wide range of applications.
More than be embodiments of the present invention, according to content disclosed by the invention, those of ordinary skill in the art can identical, the replacement scheme of conspicuous some that expect, all should fall into the scope of protection of the invention.
Claims (8)
1. the preparation method of an integrated microsensor comprises:
(1) on soi wafer, carry out photoetching and etching, the active area of definition cmos circuit and the device region of transducer, the place oxide layer of growing afterwards forms the silicon island, removes the silicon nitride on the soi wafer then;
(2) N
-And P
-Ion injects, and regulates the threshold voltage of NMOS and PMOS pipe, and the force sensing resistance of Wheatstone bridge is formed in preparation;
(3) deposit polysilicon and ion inject, definition polysilicon gate, polysilicon lead-in wire and polysilicon resistance;
(4) NMOS and PMOS pipe are carried out injection of source-drain area ion and the injection of body contact zone;
(5) depositing metal behind the definition contact hole, dry etching or wet etching metal, the metal lead wire of definition circuit and transducer;
(6) photoetching and definition form the microflute figure of sensor construction, and utilize passivation layer, device layer and the oxygen buried layer in reactive ion etching groove district;
(7) silicon in the isotropic etching microflute utilizes oxygen buried layer to stop etching, the sensor construction that obtains discharging.
2. the preparation method of integrated microsensor as claimed in claim 1 is characterized in that: in the step 1, the requirement of device is selected the soi wafer of corresponding device layer thickness and doping type according to transducer.
3. the preparation method of integrated microsensor as claimed in claim 1 is characterized in that: in the step 1, growth thin oxide layer and silicon nitride layer can be used for follow-up injection barrier layer as the silica of adhesion layer, and silicon nitride is as the mask of place oxide layer.
4. the preparation method of integrated microsensor as claimed in claim 1 or 2 is characterized in that: in the step 4, make that pressure drag cantilever beam, two strutbeam, four ends prop up admittedly, the force sensing resistance district of square diaphragm or circular film.
5. the preparation method of integrated microsensor as claimed in claim 1 is characterized in that: after the step 5, in the sensor surface deposit and define the gold thin film of one deck nano thickness, be used for as intermediate layer assembling biomolecule.
6. the preparation method of integrated microsensor as claimed in claim 1 is characterized in that: after the step 7, at the body structure surface that discharges biology, chemical sensitive layer are set.
7. the preparation method of integrated microsensor as claimed in claim 1 is characterized in that: in the step 7, adopt the silicon in KOH, the TMAH wet etching microflute, stop during the oxygen buried layer of the corrosion of body silicon under reaching device layer.
8. the preparation method of integrated microsensor as claimed in claim 1 is characterized in that: in the step 7, adopt the silicon in the inductively coupled plasma dry etching microflute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101707246A CN101211861A (en) | 2006-12-26 | 2006-12-26 | Integrated micro-sensor preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101707246A CN101211861A (en) | 2006-12-26 | 2006-12-26 | Integrated micro-sensor preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101211861A true CN101211861A (en) | 2008-07-02 |
Family
ID=39611727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101707246A Pending CN101211861A (en) | 2006-12-26 | 2006-12-26 | Integrated micro-sensor preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101211861A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102420603A (en) * | 2011-10-26 | 2012-04-18 | 哈尔滨工业大学 | Negative feedback self-balancing drive circuit used for microsensor |
| CN102649537A (en) * | 2012-04-17 | 2012-08-29 | 中国工程物理研究院电子工程研究所 | SOI MEMS (silicon on insulator micro electro mechanical system) one chip integrating method |
| CN101995295B (en) * | 2009-08-19 | 2013-03-27 | 北京大学 | Non-refrigerating infrared focal plane array as well as preparation method and application thereof |
| CN103858237A (en) * | 2011-10-07 | 2014-06-11 | 国际商业机器公司 | Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration |
| CN104003349A (en) * | 2014-05-08 | 2014-08-27 | 北京大学 | Method for preparing surface sacrificial layer of microelectronic mechanical system (MEMS) device by silicon-on-insulator (SOI) substrate |
| CN104316575A (en) * | 2014-10-31 | 2015-01-28 | 中国矿业大学 | Full-silicon MEMS (micro-electromechanical system) methane sensor, gas detection application and preparation method of full-silicon MEMS methane sensor |
| CN104340953A (en) * | 2013-08-01 | 2015-02-11 | 台湾积体电路制造股份有限公司 | Mems device and method of forming the same |
| CN107884460A (en) * | 2017-10-19 | 2018-04-06 | 中国科学院半导体研究所 | ISFET device sensitive membrane preparation methods based on standard CMOS process |
| CN108592965A (en) * | 2018-04-20 | 2018-09-28 | 北京大学 | Flexible piezoresistance type microcantilever beam sensor and preparation method thereof |
| CN109573941A (en) * | 2018-11-15 | 2019-04-05 | 中国科学院半导体研究所 | A kind of method for making in scale of CMOS-MEMS integrated chip |
| CN110448263A (en) * | 2019-09-12 | 2019-11-15 | 江苏集萃智能传感技术研究所有限公司 | A kind of capsule endoscope based on multiband filtered light image sensor |
| CN110567896A (en) * | 2019-09-12 | 2019-12-13 | 江苏集萃智能传感技术研究所有限公司 | portable analysis device based on multiband filtering |
| CN112466915A (en) * | 2020-11-19 | 2021-03-09 | 北京大学深圳研究生院 | In-screen sensing device structure of display panel and display device |
| CN113371673A (en) * | 2021-05-24 | 2021-09-10 | 北京大学 | Hybrid integrated sensing micro system and single chip integrated preparation method thereof |
| CN114235231A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | Monolithic integrated pressure sensor, preparation and packaging method |
-
2006
- 2006-12-26 CN CNA2006101707246A patent/CN101211861A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101995295B (en) * | 2009-08-19 | 2013-03-27 | 北京大学 | Non-refrigerating infrared focal plane array as well as preparation method and application thereof |
| CN103858237A (en) * | 2011-10-07 | 2014-06-11 | 国际商业机器公司 | Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration |
| CN102420603A (en) * | 2011-10-26 | 2012-04-18 | 哈尔滨工业大学 | Negative feedback self-balancing drive circuit used for microsensor |
| CN102420603B (en) * | 2011-10-26 | 2016-03-23 | 哈尔滨工业大学 | A kind of negative feedback self-balancing drive circuit for microsensor |
| CN102649537A (en) * | 2012-04-17 | 2012-08-29 | 中国工程物理研究院电子工程研究所 | SOI MEMS (silicon on insulator micro electro mechanical system) one chip integrating method |
| CN102649537B (en) * | 2012-04-17 | 2014-12-10 | 中国工程物理研究院电子工程研究所 | SOI MEMS (silicon on insulator micro electro mechanical system) one chip integrating method |
| CN104340953B (en) * | 2013-08-01 | 2017-04-12 | 台湾积体电路制造股份有限公司 | Mems device and method of forming the same |
| CN104340953A (en) * | 2013-08-01 | 2015-02-11 | 台湾积体电路制造股份有限公司 | Mems device and method of forming the same |
| CN104003349A (en) * | 2014-05-08 | 2014-08-27 | 北京大学 | Method for preparing surface sacrificial layer of microelectronic mechanical system (MEMS) device by silicon-on-insulator (SOI) substrate |
| CN104316575B (en) * | 2014-10-31 | 2017-05-31 | 中国矿业大学 | Total silicon MEMS methane transducers and gas management application and preparation method |
| CN104316575A (en) * | 2014-10-31 | 2015-01-28 | 中国矿业大学 | Full-silicon MEMS (micro-electromechanical system) methane sensor, gas detection application and preparation method of full-silicon MEMS methane sensor |
| CN107884460A (en) * | 2017-10-19 | 2018-04-06 | 中国科学院半导体研究所 | ISFET device sensitive membrane preparation methods based on standard CMOS process |
| CN108592965A (en) * | 2018-04-20 | 2018-09-28 | 北京大学 | Flexible piezoresistance type microcantilever beam sensor and preparation method thereof |
| CN109573941A (en) * | 2018-11-15 | 2019-04-05 | 中国科学院半导体研究所 | A kind of method for making in scale of CMOS-MEMS integrated chip |
| CN110448263A (en) * | 2019-09-12 | 2019-11-15 | 江苏集萃智能传感技术研究所有限公司 | A kind of capsule endoscope based on multiband filtered light image sensor |
| CN110567896A (en) * | 2019-09-12 | 2019-12-13 | 江苏集萃智能传感技术研究所有限公司 | portable analysis device based on multiband filtering |
| CN112466915A (en) * | 2020-11-19 | 2021-03-09 | 北京大学深圳研究生院 | In-screen sensing device structure of display panel and display device |
| CN113371673A (en) * | 2021-05-24 | 2021-09-10 | 北京大学 | Hybrid integrated sensing micro system and single chip integrated preparation method thereof |
| CN114235231A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | Monolithic integrated pressure sensor, preparation and packaging method |
| CN114235231B (en) * | 2021-12-16 | 2024-01-09 | 东南大学 | Monolithic integrated pressure sensor, preparation and packaging method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101211861A (en) | Integrated micro-sensor preparation method | |
| US7763947B2 (en) | Piezo-diode cantilever MEMS | |
| CN1974372B (en) | Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and making process thereof | |
| CN103604538B (en) | MEMS pressure sensor chip and its manufacture method based on SOI technology | |
| CN104062464B (en) | MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method | |
| CN103344374B (en) | Hidden-type MEMS pressure sensor sensitive chip and manufacturing method thereof | |
| US20140234981A1 (en) | Double gate ion sensitive field effect transistor | |
| CN103199020B (en) | Based on preparation method and the detection method of the liquid grid-type graphene field effect pipe of PI | |
| CN103434999B (en) | The integrated manufacturing method of a kind of temperature, humidity, air pressure and acceleration transducer | |
| CN101551284A (en) | Pressure sensor based on Si-Si direct bonding and manufacturing method thereof | |
| WO2009034843A1 (en) | Semiconductor gas sensor and method for manufacturing the same | |
| CN103303862A (en) | Production method of high-sensitivity biochemical sensor based on resonance type micro-cantilever structure | |
| CN102243126B (en) | Nano silicon thin film transistor pressure sensor | |
| CN109342836B (en) | Production process based on piezoelectric piezoresistive broadband high-field-intensity miniature electric field sensor | |
| CN101995295B (en) | Non-refrigerating infrared focal plane array as well as preparation method and application thereof | |
| CN102928623A (en) | Micro-acceleration transducer capable of avoiding parasitic capacitance structure, and manufacturing method thereof | |
| CN102692705B (en) | MOEMS (Micro Optoelectro Mechanical System)-process-based micro scanning raster based on of integrating angle sensor | |
| CN103196596B (en) | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof | |
| CN1193218C (en) | NEMS piezoresistive pressure sensor chip and its making process | |
| CN107505376B (en) | PH value sensing device based on field effect transistor structure and manufacturing method thereof | |
| Kabir et al. | High sensitivity acoustic transducers with thin p+ membranes and gold back-plate | |
| CN204831651U (en) | Gauge pressure pressure sensor chip is sealed up to polycrystalline silicon pressure drag formula | |
| CN205561900U (en) | Power / magnetism multi -functional sensor | |
| KR20030013130A (en) | High sensitive cantilever sensor and method for fabrication thereof | |
| CN106949910B (en) | Self-driven and self-sensing cantilever beam sensor based on nano composite material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |