CN104316575B - Total silicon MEMS methane transducers and gas management application and preparation method - Google Patents
Total silicon MEMS methane transducers and gas management application and preparation method Download PDFInfo
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- CN104316575B CN104316575B CN201410607031.3A CN201410607031A CN104316575B CN 104316575 B CN104316575 B CN 104316575B CN 201410607031 A CN201410607031 A CN 201410607031A CN 104316575 B CN104316575 B CN 104316575B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
- G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
Abstract
A kind of total silicon MEMS methane transducers and gas management application and preparation method, suitable for being used under industrial and mineral environment, belong to methane transducer and preparation method thereof and detection method, particularly belong to using the methane transducer and its CH_4 detection method of microelectromechanical systems process technology.The total silicon MEMS sensor uses monocrystalline silicon as the heating material of heating element heater, and heating element heater is not required to the detection that catalyst carrier and catalyst material are capable of achieving low-concentration methane simultaneously as methane sensing element.Total silicon MEMS methane transducers are processed by substrate of soi wafer using MEMS technology, and processing technology is compatible with CMOS technology.The total silicon MEMS sensor has that low in energy consumption, sensitivity is high, do not influenceed by anoxic, not by carbon distribution, poisoning etc. because catalyst brings the characteristics of influenceing.
Description
Technical field
The present invention relates to methane transducer and gas management application and preparation method, it is particularly suited in a kind of industrial and mineral production
The total silicon MEMS methane transducers and gas management application and preparation method used in preventing gas.
Background technology
The catalytic combustion type methane transducer of traditional platinum filament heating is currently based on still in underground coal mine extensive use.Its principle
It is the catalyst combustion reaction heat release effect based on methane gas, due to there are its shortcomings using catalyst.Such as the adjustment cycle
Short, carbon distribution, poisoning, activation etc. are fundamentally derived from using catalyst and catalyst carrier.Existing catalytic combustion type methane is passed
Sensor is using the coil of the noble metal coiling such as platinum filament as heating element heater, it is difficult to mass production and uniformity is poor, and power consumption
It is larger.It is thus impossible to meet application demand of the Internet of Things to methane transducer well.Existing heat-conducted firedamp sensor is in coal
It is used to detect the methane gas based on methane of high concentration, the gas based on methane for low concentration less than 4% under mine
Gas is low due to sensitivity, is not used to detection alarm.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of simple structure, catalyst is not used, can detect that concentration is low
In 4% methane gas based on methane, and cmos compatible MEMS technology is used, easily total silicon MEMS methane is sensed for production
Device and gas management application and preparation method.
Technical scheme：Total silicon MEMS methane transducers of the invention include silicon cell, fixing end and silicon frame bearing；It is described
Silicon frame bearing is SOI Substrate, including silicon substrate, set on a silicon substrate buried regions silica and buried regions silica on top layer
Silicon, top layer silicon is monocrystalline silicon；
The fixing end is on the buried regions silica on silicon frame bearing；The fixing end includes the oxygen outside silicon layer, silicon layer
SiClx layer and the metal as electricity extraction pad；The silicon layer of fixing end is located on buried regions silica；The support of the fixing end
Doped silicon layer is provided with silicon layer；The metal that the electricity draws pad is located on the silicon oxide layer on silicon layer；Electricity draws pad
The doped silicon layer directly contact of metal and fixing end simultaneously constitutes Ohmic contact, and the two contact portion does not have silicon oxide layer；
The silicon cell includes silicon oxide layer and the passivation protection layer outside silicon layer, silicon layer, and the silicon cell is provided with silicon heating
Device, two symmetrically arranged silicon cantilevers for supporting silicon heater and electrical connection is provided for silicon heater, the silicon cantilever
At least 300 μm of length；One end of the silicon cantilever is connected with silicon heater, the fixing end phase on the other end and silicon frame bearing
Even, be suspended from silicon heater in air by two silicon cantilevers；Two silicon cantilevers are parallel to be monolithically fabricated U-shaped with silicon heater and hangs side by side
Arm configuration；Silicon heater can be the parallel connection of multiple silicon fire-bars, with larger surface area；The passivation protection layer is oxygen
SiClx, or hafnium oxide, or silica/alumina composite bed, or hafnium oxide/aluminum oxide composite layers, or hafnium oxide/silicon nitride are compound
Layer, or aluminum oxide/silicon nitride composite bed, or silica/silicon nitride composite bed, or silica, hafnium oxide, aluminum oxide, silicon nitride
Different materials combine the composite bed to be formed；The wherein thickness of silica at least 10nm, the thickness of hafnium oxide is at least 5 μm, oxidation
Aluminium thickness at least 6nm, silicon nitride thickness at least 10nm, the thickness of whole passivation protection layer is no more than 1mm；
The silicon layer of the silicon cell is both a part for the top layer silicon of SOI Substrate with the silicon layer of fixing end, that is, be both silicon frame
A part for the top layer silicon of frame bearing, is shaped by top layer silicon, and thickness is identical；But not with other tops of silicon frame bearing
Layer silicon is connected；Only it is connected with the silicon layer of silicon cell between two silicon layers of fixing end.
A kind of total silicon MEMS methane transducers CH_4 detection application process：By in the total silicon MEMS methane transducers
Applied voltage or passing to electric current makes silicon cell work in turning point in current-resistance characteristic curve in two fixing ends of silicon cell
The operating point regions in left side, make the silicon heater of silicon cell generate heat, heating-up temperature more than 500 degrees Celsius, single silicon cell work
Power consumption about 80~90mW when making；The point of greatest resistance that the turning point occurs for resistance increases with curtage, works as electricity
When stream or voltage continue to increase, resistance does not continue to increase and reduces on the contrary；When there is methane gas to occur, total silicon MEMS methane is passed
The temperature reduction of the silicon heater of sensor, makes the resistance of silicon cell change；Passed using the total silicon MEMS methane described in two
The silicon cell of sensor constitutes Wheatstone bridge detection bridge arm detection methane concentration, the silicon of one of total silicon MEMS methane transducers
Element is contacted with surrounding air, and the silicon cell of another total silicon MEMS methane transducers is air-tight packaging, the gas in encapsulation
Completely cut off with surrounding air and seal, the output voltage of favour stone detection electric bridge with surrounding air due to contacting when there is methane gas
Silicon cell resistance reduction and change, favour stone detection electric bridge output voltage with methane concentration increase and reduce, realize
Detection to methane gas, to low-concentration methane gas（0~4%）Detection sensitivity up to 10mV/CH4%, the response time is reachable
40ms or so.
The preparation method of total silicon MEMS methane transducers as claimed in claim 1, including three kinds of preparation methods, specifically
For：
Preparation method（One）The step of be：
The first step, silicon oxide layer is prepared in the top layer silicon on SOI Substrate front；
Second step, the silicon oxide layer on graphical top layer silicon, the window needed for forming doping or ion implanting；
3rd step, doping or ion implanting form doped silicon layer；
4th step, the metal that electricity draws pad is formed by deposit, sputtering or evaporation on SOI Substrate front；
5th step, the electricity that graphical 4th step is formed draws the metal of pad, forms the metal Pad that electricity draws pad, moves back
Ohmic contact is formed after fire；
6th step, is lithographically formed front etching window figure, and etching gets rid of the silica in the etching window figure of front
Layer, then using RIE（Reactive Ion Etching, reactive ion etching）Method dry etching continues to get rid of top layer
Silicon, etching stopping forms on buried regions silica silicon cell in buried regions silica, after etching, the structure graph of fixing end and carves
Etching off remove in window corresponding with back-etching window remaining silicon oxide layer and top layer silicon, the silicon cell for being formed and and its
Two fixing ends of connection are not attached to remaining top layer silicon on buried regions silica, two fixing ends of same silicon cell not with
Remaining top layer silicon on silicon frame bearing is connected, and is not also connected by remaining top layer silicon on silicon frame bearing；
7th step, etch-protecting layer is prepared on the front of SOI Substrate, using photoresist or PSG（Phosphorosilicate glass）As
Etch-protecting layer, the etch-protecting layer covers the front of whole soi wafer；
8th step, after the SOI Substrate back side is lithographically formed back-etching graph window, using wet etching or ICP
(Inductively Coupled Plasma, sense coupling) or DRIE（Deep Reactive Ion
Etching, deep reaction ion etching）The SOI Substrate that back-etching window is exposed is got rid of Deng dry etching method etching
Silicon substrate, etching stopping is in buried regions silica；The back-etching window is with front etching window in SOI silicon chip rear projections
Centre of figure coincide, back-etching window be more than front etching window；
9th step, the buried regions exposed from the SOI Substrate back side using hydrofluoric acid solution or hydrofluoric acid aerosol wet etching is aoxidized
Silicon, discharges silicon cell；
Tenth step, the etch-protecting layer prepared by the 7th step of removal, dries；
11st step, the silicon to exposing is aoxidized, and forms oxide thin layer silicon layer；
12nd step, the front of SOI Substrate, SOI of the protective layer covering in addition to silicon cell are covered using protective layer
Substrate front remainder；Can be using photoresist as protective layer；Can be prepared after being accurately positioned with going bail for using micro- spray printing device
The photoresist of sheath；Also can be used be covered in SOI Substrate it is positive shelter version and prepared using the method for spraying described be used as protection
The photoresist of layer, the version of sheltering only exposes silicon cell, and remaining masked version in SOI Substrate front portion is sheltered from；
13rd step, hafnia film is prepared using ALD methods, or prepares aluminum oxide film, or prepares hafnium oxide/oxidation
Aluminium laminated film, or silica/hafnium oxide/alumina composite film is prepared, by the 11st step and this step or by the tenth
One step forms passivation protection layer with the one of step in this step；The passivation protection layer covering silicon cell outer surface of preparation；
14th step, the protective layer that the 12nd step of removal is used, dries；
15th step, scribing is carried out along marking groove to SOI Substrate, and methane transducer is obtained after sliver；
Or preparation method（Two）The step of be：
The first step, silicon oxide layer is prepared in the top layer silicon on SOI Substrate front；
Second step, the silicon oxide layer on graphical top layer silicon, the window needed for forming doping or ion implanting；
3rd step, doping or ion implanting form doped silicon layer；
4th step, is lithographically formed front etching window figure, and etching gets rid of the silica in the etching window figure of front
Layer, then using RIE etching continue to get rid of top layer silicon, etching stopping in buried regions silica, after etching on buried regions silica
Form silicon cell, the structure graph of fixing end and etch remaining oxidation got rid of in window corresponding with back-etching window
Remaining top layer silicon in silicon layer and top layer silicon, the silicon cell for being formed and connected two fixing ends and buried regions silica is not
It is connected, two fixing ends of same silicon cell are not connected with remaining top layer silicon on silicon frame bearing, does not also pass through silicon frame
Remaining top layer silicon on bearing is connected；
5th step, etch-protecting layer is prepared in the front of SOI Substrate, using photoresist or PSG（Phosphorosilicate glass）As quarter
Erosion protective layer, the etch-protecting layer covers the front of whole soi wafer；
6th step, after the SOI Substrate back side is lithographically formed back-etching graph window, using wet etching or ICP or
The dry etching methods such as DRIE etching gets rid of the silicon substrate of the SOI Substrate that back-etching window is exposed, and etching stopping is in burying
Layer silica；
7th step, the buried regions silica exposed from silicon substrate using hydrofluoric acid solution or hydrofluoric acid aerosol wet etching, is released
Release hanging silicon cell；
8th step, the etch-protecting layer that the 5th step of removal is formed；
9th step, the silicon to exposing is aoxidized, and forms oxide thin layer silicon layer；
Tenth step, the front of SOI Substrate is covered using protective layer, and the protective layer covering is in addition to hanging silicon cell
SOI Substrate front remainder；Can be using photoresist as protective layer；Can be prepared after being accurately positioned using micro- spray printing device and be used as
The photoresist of protective layer；Also can be used be covered in SOI Substrate it is positive shelter version prepared using the method for spraying it is described with going bail for
The photoresist of sheath；The version of sheltering only exposes silicon cell, and remaining masked version in SOI Substrate front portion is sheltered from；
11st step, aluminum oxide or hafnia film are prepared using ALD methods in the outer surface of silicon cell；
12nd step, silicon nitride is prepared at 400~450 DEG C using PECVD in the outer surface of hanging silicon cell；Pass through
The combination of the 9th step, the 11st step and this step or above three step is prepared into silica/silicon nitride laminated film, or oxidation
Silicon/aluminum oxide/silicon nitride laminated film, or hafnium oxide/silicon nitride laminated film, or silica/hafnium oxide/aluminum oxide/nitridation
Silicon meets film, forms passivation protection layer；The passivation protection layer covering silicon cell outer surface of preparation；
13rd step, the protective layer that the tenth step of removal is used, dries；
14th step, photoresist is prepared in SOI Substrate front, and the figure that electricity draws the metal Pad of pad is formed after photoetching；
15th step, the metal that electricity draws pad is prepared by sputtering or depositing；
16th step, removes photoresist prepared by the 14th step, only in fixing end（102）The upper electricity that formed draws pad
Metal Pad（22）, dry, Ohmic contact is formed after annealing；
17th step, scribing is carried out along marking groove to SOI Substrate, and methane transducer is obtained after sliver；
Or preparation method（Three）The step of be：
The first step to the 13rd step with the first step of preparation method to the 13rd step,
Version is sheltered in 14th step, preparation, and the electricity on the figure for sheltering version and SOI Substrate draws the metal Pad of pad
Figure it is identical；
15th step, prepares the metal Pad that electricity draws pad, and SOI Substrate front is placed in by version is sheltered described in the 14th step
On and be aligned after splash-proofing sputtering metal, only on fixing end formed electricity draw pad metal Pad, after annealing formed ohm connect
Touch；
16th step, scribing is carried out along marking groove to SOI Substrate, and methane transducer is obtained after sliver.
Beneficial effect：The silicon cell and silicon heater of total silicon MEMS methane transducers of the invention with silicon as heating material,
It is not to use metal as heating material, its silicon heater can be powered in atmosphere by the support of silicon cantilever away from silicon substrate is outstanding
More than 500 DEG C of high temperature is heated to, the MEMS processing technologys for catalyst is not used, using are compatible with CMOS.As a result of upper
Scheme is stated, with following effective effect：
The silicon heater discharged from soi wafer is outstanding in atmosphere, reduces well by the heat of soi wafer
Loss, silicon heater can be heated to more than 500 DEG C of high temperature with relatively low power；Methane transducer of the invention is not contained urges
Agent and catalytic carrier, therefore, the performance of sensor is not influenceed by catalyst, in the absence of spirit caused by catalyst activity reduction
The problems such as sensitivity reduction, poisoning, activation；Significantly for low-concentration methane gas；Methane transducer tool of the invention
There is sensitivity higher, up to 10mV/CH4%, such sensitivity can push directly on instrument, reach national standard
Requirement.
1st, total silicon MEMS methane transducers of the invention are not used and urged with silicon cell as heating element heater and methane detection element
Agent can realize low-concentration methane gas（0~5%）Detection；The structure of silicon heater of the invention be multiple silicon fire-bars and
Connection form, with larger with air contact high temperature surface area, can be with sensitivity technique low-concentration methane high；It is of the invention
The sensitivity of total silicon MEMS methane transducers is up to 10mV/CH4%, can push directly on instrument, meet national standard requirement.
2nd, methane transducer of the invention does not contain catalyst and catalytic carrier, therefore, the performance of sensor is not catalyzed
The influence of agent, caused by being reduced in the absence of catalyst activity the problems such as sensitivity decrease, poisoning, activation；Also, first of the invention
Alkane sensor is participated in the detection of methane without oxygen, therefore is not influenceed by oxygen in air；
3rd, the silicon heater of total silicon MEMS methane transducers of the invention is outstanding in atmosphere and far by the support of silicon cantilever
From silicon substrate, distance is more than more than 300 μm, and silicon heater can be heated to more than 500 DEG C of high temperature with relatively low power, because
This has advantage low in energy consumption, power consumption about 80~90mW when single silicon cell works.
4th, the monocrystalline silicon of the use stable performance of the silicon cell of total silicon MEMS methane transducers of the invention is through MEMS technology
Processing is obtained, and this makes methane transducer of the invention have good stability under hot operation state with the life-span long.This
Because monocrystalline silicon does not exist the readily volatilized high temperature of the METAL HEATING PROCESS material more than 500 degrees Celsius such as platinum, tungsten, distillation, migration
The shortcomings of, also in the absence of polysilicon resistance, grain boundary resistance is easy to change, the shortcoming that cannot control at high temperature.Meanwhile, in this hair
The passivation layer that the outer surface of bright silicon cell is set also reduces influence of the external environment to above-mentioned component, so as to further carry
The stability of methane transducer performance of the invention high.
5th, the silicon cell of total silicon MEMS methane transducers of the invention is obtained with silicon through MEMS processing, processing technology unification,
Simply and SOI-CMOS process compatibles, the advantage with low production cost.
6th, total silicon MEMS methane transducer sizes of the invention are small, low in energy consumption, fast response time, up to 40ms or so, defeated
Go out linearly degree good.
7th, methane transducer of the invention can be produced in batches using CMOS technology, can be had good uniformity and be exchanged
Property, can also calibrate in batches, therefore can further improve sensor performance and reduce the cost of pick up calibration link.
Advantage：The total silicon MEMS methane transducers that the present invention is provided have highly sensitive response letter to low-concentration methane
Number, its preparation method can be compatible with CMOS technology, low cost, easy batch production and calibration, with good uniformity, exchanges
Property, methane transducer size of the invention is small, fast response time, biosensor power consumption is low, sensitivity is high, linearity of output signal
Good, long lifespan；Sensor performance is not influenceed by catalyst, and the performance to sensor need not consider when carrying out complex optimum and compensation
It is the complex effects of catalyst, simple and easy to apply.
Brief description of the drawings
Fig. 1 is schematic top plan view of the total silicon MEMS firedamp sensors of the invention on SOI Substrate.
Fig. 2 is the schematic top plan view of the total silicon MEMS firedamp sensors of the invention after scribing.
Fig. 3 is the Section A-A sectional view in Fig. 1, Fig. 2 of the present invention.
Fig. 4 is a kind of structural representation of silicon heater of the invention.
Fig. 5 is the current-resistance characteristic curve of the silicon cell of total silicon MEMS methane transducers of the invention.
Fig. 6 is the methane resonse characteristic of total silicon MEMS methane transducers of the invention.
In figure：Carve at 101- silicon cells, 102- fixing ends, 103- silicon frame bearings, 104- fronts etching window, the 105- back sides
Fenetre mouthful, 106- draws along marking groove, 1011- silicon heaters, 1012- silicon cantilevers, 1013- silicon fire-bars, 21- silicon layers, 22- electricity
The metal of pad, 23- silicon oxide layers, 24- doped silicon layers, 25- passivation protections layer, 31- silicon substrates, 32- buried regions silica, 33-
Top layer silicon.
Specific embodiment
Embodiments of the invention are further described below in conjunction with the accompanying drawings：
Embodiment：In Fig. 1, Fig. 2, Fig. 3, total silicon MEMS methane transducers include silicon cell 101, fixing end 102 with
Silicon frame bearing 103；The silicon frame bearing 103 is SOI Substrate, including silicon substrate 31, the buried regions oxygen that is located on silicon substrate 31
Top layer silicon 33 on SiClx 32 and buried regions silica 32, top layer silicon 33 is monocrystalline silicon；
The fixing end 102 is on the buried regions silica 32 on silicon frame bearing 103；The fixing end 102 includes silicon layer
21st, outside silicon layer 21 silicon oxide layer 23 and the metal Pad 22 as electricity extraction pad；The silicon layer 21 of fixing end 102 is located at buried regions
On silica 32；Doped silicon layer 24 is provided with the support silicon layer 21 of the fixing end 102；The electricity draws the metal of pad
Pad 22 is located on the silicon oxide layer 23 on silicon layer 21；Electricity draws the metal 22 of pad and the doped silicon layer 24 of fixing end 102
Directly contact simultaneously constitutes Ohmic contact, and the two contact portion does not have silicon oxide layer 23；
The silicon cell 101 includes silicon oxide layer 23 and the passivation protection layer 25 outside silicon layer 21, silicon layer 21, the silicon cell
101 to be provided with silicon heater 1011, two symmetrically arranged for supporting silicon heater 1011 and for silicon heater 1011 provides electricity
The silicon cantilever 1012 of connection, at least 300 μm of the length of the silicon cantilever 1012；One end of the silicon cantilever 1012 and silicon heater
1011 are connected, and the other end is connected with the fixing end 102 on silicon frame bearing 103, and two silicon cantilevers 1012 are by silicon heater 1011
It is suspended from air；Two silicon cantilevers 1012 are parallel side by side and silicon heater 1011 is monolithically fabricated U-shaped cantilever design；The passivation
Protective layer 25 is silica, or hafnium oxide, or silica/alumina composite bed, or hafnium oxide/aluminum oxide composite layers, or oxidation
Hafnium/silicon nitride composite bed, or aluminum oxide/silicon nitride composite bed, or silica/silicon nitride composite bed, or silica, hafnium oxide,
Aluminum oxide, silicon nitride different materials combine the composite bed to be formed；The wherein thickness of silica at least 10nm, the thickness of hafnium oxide is extremely
It it is less 5 μm, aluminum oxide thickness at least 6nm, silicon nitride thickness at least 10nm, the thickness of whole passivation protection layer is no more than 1mm；
The silicon layer 21 of the silicon cell 101 is both of the top layer silicon 33 of SOI Substrate with the silicon layer 21 of fixing end 102
Point, that is, a part for the top layer silicon 33 of silicon frame bearing 103 is both, shaped by top layer silicon 33, thickness is identical；But no
It is connected with other top layer silicons 33 of silicon frame bearing 103；Silicon layer between two silicon layers of fixing end 102 21 only with silicon cell
21 are connected.
Silicon heater 1011 as shown in Figure 4 is the parallel connection of multiple silicon fire-bars 1013, to increase the height with air contact
Warm surface area, silicon heater 1011 can also be toroidal.
Fig. 5 is the current-resistance characteristic curve of total silicon MEMS methane transducers of the invention.
A kind of CH_4 detection application process of total silicon MEMS methane transducers, by the total silicon MEMS methane transducers
Silicon cell 101 two fixing ends 102 on applied voltage or passing to electric current makes silicon cell 101 work in current-resistance characteristic
Operating point regions in curve on the left of turning point, make the silicon heater 1011 of silicon cell 101 generate heat, and heating-up temperature is Celsius 500
It is more than degree, power consumption about 80~90mW when single silicon cell 101 works；The turning point is resistance with curtage increase
The point of greatest resistance of appearance, when curtage continues to increase, resistance does not increase in continuation and reduces on the contrary；When there is methane gas
During appearance, the temperature of the silicon heater 1011 of total silicon MEMS methane transducers is reduced, the resistance of silicon cell 101 is changed；
Wheatstone bridge is constituted using the silicon cell 101 of the total silicon MEMS methane transducers described in two detect that bridge arm detects that methane is dense
Degree, the silicon cell 101 of one of total silicon MEMS methane transducers is contacted with surrounding air, another total silicon MEMS methane sensing
The silicon cell 101 of device is that air-tight packaging, gas and the surrounding air isolation in encapsulation are sealed, when there is methane gas favour this
The output voltage of logical detection electric bridge is changed due to the resistance of silicon cell 101 reduction contacted with surrounding air, the inspection of favour stone
The output voltage for surveying electric bridge increases and reduces with methane concentration, the detection to methane gas is realized, to low-concentration methane gas（0~
4%）Detection sensitivity up to 10mV/CH4%, the response time is up to 40ms or so.
Fig. 6 is the methane resonse characteristic of total silicon MEMS methane transducers of the invention.
The preparation method of total silicon MEMS methane transducers, including three kinds of preparation methods, specially：
Preparation method（One）The step of be：
The first step, silicon oxide layer 23 is prepared in the top layer silicon 33 on SOI Substrate front；
Second step, the silicon oxide layer 23 on graphical top layer silicon 33, the window needed for forming doping or ion implanting；
3rd step, doping or ion implanting form doped silicon layer 24；
4th step, the metal that electricity draws pad is formed by deposit, sputtering or evaporation on SOI Substrate front；
5th step, the electricity that graphical 4th step is formed draws the metal of pad, forms the metal Pad 22 that electricity draws pad,
Ohmic contact is formed after annealing；
6th step, is lithographically formed the figure of front etching window 104, and etching is got rid of in the figure of front etching window 104
Silicon oxide layer 23, then continues to get rid of top layer silicon 33 using RIE dry etchings, and etching stopping is in buried regions silica 32, etching
Silicon cell 101, the structure graph of fixing end 102 and etching are formed on buried regions silica 32 afterwards to get rid of and back-etching window
Remaining silicon oxide layer 23 and top layer silicon 33 in mouthful corresponding window, the silicon cell 101 for being formed and it is connected two it is solid
Fixed end 102 is not attached to remaining top layer silicon on buried regions silica 32, two fixing ends 102 of same silicon cell 101 not with
Remaining top layer silicon on silicon frame bearing 103 is connected, and is not also connected by remaining top layer silicon on silicon frame bearing 103；
7th step, etch-protecting layer is prepared on the front of SOI Substrate, using photoresist or PSG（Phosphorosilicate glass）As
Etch-protecting layer, the etch-protecting layer covers the front of whole soi wafer；
8th step, after the SOI Substrate back side is lithographically formed the figure of back-etching window 105, using wet etching or ICP or
The dry etching methods such as DRIE etching gets rid of the silicon substrate 31 of the SOI Substrate that back-etching window is exposed, etching stopping in
Buried regions silica 32；The back-etching window 105 is with front etching window 104 in the figure of SOI silicon chip rear projections
The heart coincides, and back-etching window 105 is more than front etching window 104；
9th step, the buried regions exposed from the SOI Substrate back side using hydrofluoric acid solution or hydrofluoric acid aerosol wet etching is aoxidized
Silicon 32, discharges silicon cell 101；
Tenth step, the etch-protecting layer prepared by the 7th step of removal, dries；
11st step, the silicon to exposing is aoxidized, and forms oxide thin layer silicon layer；
12nd step, the front of SOI Substrate is covered using protective layer, and the protective layer covering is in addition to silicon cell 101
SOI Substrate front remainder；Can be using photoresist as protective layer；Can be prepared after being accurately positioned using micro- spray printing device and be used as
The photoresist of protective layer；Also can be used be covered in SOI Substrate it is positive shelter version prepared using the method for spraying it is described with going bail for
The photoresist of sheath, the version of sheltering only exposes silicon cell 101, and remaining masked version in SOI Substrate front portion is sheltered from；
13rd step, hafnia film is prepared using ALD Atomic layer deposition methods, or prepares aluminum oxide film, or is prepared
Hafnium oxide/alumina composite film, or silica/hafnium oxide/alumina composite film is prepared, by the 11st step and this step
Or passivation protection layer 25 is formed by the one of step in the 11st step and this step；The passivation protection layer 25 of preparation is covered
The outer surface of silicon cell 101；
14th step, the protective layer that the 12nd step of removal is used, dries；
15th step, scribing is carried out along marking groove 106 to SOI Substrate, and methane transducer is obtained after sliver.
Preparation method（Two）The step of be：
The first step, silicon oxide layer 23 is prepared in the top layer silicon 33 on SOI Substrate front；
Second step, the silicon oxide layer 23 on graphical top layer silicon 33, the window needed for forming doping or ion implanting；
3rd step, doping or ion implanting form doped silicon layer 24；
4th step, is lithographically formed the figure of front etching window 104, and etching is got rid of in the figure of front etching window 104
Silicon oxide layer 23, then continues to get rid of top layer silicon 33 using RIE dry etchings, and etching stopping is in buried regions silica 32, etching
Silicon cell 101, the structure graph of fixing end 102 and etching are formed on buried regions silica 32 afterwards to get rid of and back-etching window
Remaining silicon oxide layer 23 and top layer silicon 33 in mouthful corresponding window, the silicon cell 101 for being formed and it is connected two it is solid
Fixed end 102 is not attached to remaining top layer silicon on buried regions silica 32, two fixing ends 102 of same silicon cell 101 not with
Remaining top layer silicon on silicon frame bearing 103 is connected, and is not also connected by remaining top layer silicon on silicon frame bearing 103；
5th step, prepares etch-protecting layer, using photoresist or PSG above the front/top layer silicon of SOI Substrate（Phosphorus
Silica glass）Used as etch-protecting layer, the etch-protecting layer covers the front of whole soi wafer；
6th step, after the SOI Substrate back side is lithographically formed the figure of back-etching window 105, using wet etching or ICP or
The dry etching methods such as DRIE etching gets rid of the silicon substrate 31 of the SOI Substrate that back-etching window is exposed, etching stopping in
Buried regions silica 32；
7th step, the buried regions silica exposed from silicon substrate 31 using hydrofluoric acid solution or hydrofluoric acid aerosol wet etching
32, discharge hanging silicon cell 101；
8th step, the etch-protecting layer that the 5th step of removal is formed；
9th step, the silicon to exposing is aoxidized, and forms oxide thin layer silicon layer；
Tenth step, the front of SOI Substrate is covered using protective layer, and the protective layer covering is in addition to hanging silicon cell 101
SOI Substrate front remainder；Can be using photoresist as protective layer；Use can be prepared after being accurately positioned using micro- spray printing device
Make the photoresist of protective layer；Also the usable positive version of sheltering of SOI Substrate that is covered in is used as using described in the method preparation for spraying
The photoresist of protective layer；The version of sheltering only exposes silicon cell 101, and remaining masked version in SOI Substrate front portion is blocked
Firmly；
11st step, in the outer surface of silicon cell 101 prepares aluminum oxide or hafnium oxide is thin using ALD Atomic layer deposition methods
Film；
12nd step, using PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma
Body strengthens chemical vapour deposition technique) prepare silicon nitride in the outer surface of hanging silicon cell 101 at 400~450 DEG C；By
The combination of nine steps, the 11st step and this step or above three step is prepared into silica/silicon nitride laminated film, or oxidation
Silicon/aluminum oxide/silicon nitride laminated film, or hafnium oxide/silicon nitride laminated film, or silica/hafnium oxide/aluminum oxide/nitridation
Silicon meets film, forms passivation protection layer 25；The passivation protection layer 25 of preparation covers the outer surface of silicon cell 101；
13rd step, the protective layer that the tenth step of removal is used, dries；
14th step, photoresist is prepared in SOI Substrate front, and the figure that electricity draws the metal Pad 22 of pad is formed after photoetching
Shape；
15th step, the metal that electricity draws pad is prepared by sputtering or depositing；
16th step, removes photoresist prepared by the 14th step, only in fixing end（102）The upper electricity that formed draws pad
Metal Pad（22）, dry, Ohmic contact is formed after annealing；
17th step, scribing is carried out along marking groove 106 to SOI Substrate, and methane transducer is obtained after sliver.
Preparation method（Three）The step of be：
The first step is to the 13rd same preparation method of step（Two）The first step to the 13rd step,
Version is sheltered in 14th step, preparation, and the electricity on the figure for sheltering version and SOI Substrate draws the metal Pad of pad
22 figure is identical；
15th step, prepares the metal Pad 22 that electricity draws pad, and SOI Substrate is being placed in just by version is sheltered described in the 14th step
On face and be aligned after splash-proofing sputtering metal, only on fixing end 102 formed electricity draw pad metal Pad 22, after annealing formed
Ohmic contact；
16th step, scribing is carried out along marking groove 106 to SOI Substrate, and methane transducer is obtained after sliver.
Claims (3)
1. a kind of total silicon MEMS methane transducers, it is characterised in that：It includes silicon cell（101）, fixing end（102）With silicon frame
Bearing（103）；The silicon frame bearing（103）It is SOI Substrate, including silicon substrate（31）, be located at silicon substrate（31）On buried regions
Silica（32）And buried regions silica（32）On top layer silicon（33）, top layer silicon（33）It is monocrystalline silicon；
The fixing end（102）It is located at silicon frame bearing（103）On buried regions silica（32）On；The fixing end（102）Bag
Include silicon layer（21）, silicon layer（21）Outer silicon oxide layer（23）And the metal Pad of pad is drawn as electricity（22）；Fixing end（102）
Silicon layer（21）It is located at buried regions silica（32）On；The fixing end（102）Silicon layer（21）Inside it is provided with doped silicon layer（24）；
The electricity draws the metal Pad of pad（22）It is located at silicon layer（21）On silicon oxide layer（23）On；Electricity draws the metal of pad
（22）With fixing end（102）Doped silicon layer（24）Directly contact simultaneously constitutes Ohmic contact, and the two contact portion does not have silica
Layer（23）；
The silicon cell（101）Including silicon layer（21）, silicon layer（21）Outer silicon oxide layer（23）And passivation protection layer（25）, it is described
Silicon cell（101）It is provided with silicon heater（1011）, two it is symmetrically arranged for supporting silicon heater（1011）And for silicon is heated
Device（1011）The silicon cantilever of electrical connection is provided（1012）, the silicon cantilever（1012）At least 300 μm of length；The silicon cantilever
（1012）One end and silicon heater（1011）It is connected, the other end and silicon frame bearing（103）On fixing end（102）It is connected,
Two silicon cantilevers（1012）By silicon heater（1011）It is suspended from air；Two silicon cantilevers（1012）It is parallel to be heated with silicon side by side
Device（1011）It is monolithically fabricated U-shaped cantilever design；The passivation protection layer（25）It is silica, or hafnium oxide, or silica/oxidation
Aluminium composite bed, or hafnium oxide/aluminum oxide composite layers, or hafnium oxide/silicon nitride composite bed, or aluminum oxide/silicon nitride composite bed, or
Silica/silicon nitride composite bed, or silica, hafnium oxide, aluminum oxide, silicon nitride different materials combine the composite bed to be formed；Its
The thickness of middle silica at least 10nm, the thickness of hafnium oxide is at least 5nm, aluminum oxide thickness at least 6nm, and silicon nitride thickness is at least
10nm, the thickness of whole passivation protection layer is no more than 1 μm；
The silicon cell（101）Silicon layer（21）With fixing end（102）Silicon layer（21）It is both the top layer silicon of SOI Substrate（33）'s
A part, that is, be both silicon frame bearing（103）Top layer silicon（33）A part, be by top layer silicon（33）Shape, it is thick
Degree is identical；But not with silicon frame bearing（103）Other top layer silicons（33）It is connected；Two fixing ends（102）Silicon layer（21）
Between only silicon layer with silicon cell（21）It is connected.
2. the application process of total silicon MEMS methane transducers described in a kind of utilization claim 1, it is characterised in that：By described
Two fixing ends of total silicon MEMS methane transducers（102）Upper applied voltage or electric current make silicon cell（101）Work in electric current-electricity
Operating point regions in resistance characteristic curve on the left of turning point, make silicon cell（101）Silicon heater（1011）Heating, heating-up temperature
More than 500 degrees Celsius；The point of greatest resistance that the turning point occurs for resistance increases with curtage, when electric current or electricity
When pressure continues to increase, resistance does not continue to increase and reduces on the contrary；When there is methane gas to occur, total silicon MEMS methane transducers
Silicon heater（1011）Temperature reduction, the resistance of silicon cell is changed；Passed using the total silicon MEMS methane described in two
The silicon cell of sensor（101）Constitute Wheatstone bridge detection bridge arm detection methane concentration, one of total silicon MEMS methane sensing
The silicon cell of device（101）Contacted with surrounding air, the silicon cell of another total silicon MEMS methane transducers（101）For air-tightness is sealed
Gas and surrounding air in dress, encapsulation completely cut off sealing, when there is methane gas favour stone detect the output voltage of electric bridge by
In the silicon cell contacted with surrounding air（101）Resistance is reduced and changed, and the output voltage of favour stone detection electric bridge is with first
Alkane concentration increases and reduces, and realizes the detection to methane gas.
3. the preparation method of total silicon MEMS methane transducers as claimed in claim 1, it is characterised in that including three kinds of sides of preparation
Method；
Preparation method（One）The step of be：
The first step, the top layer silicon on SOI Substrate front（33）On prepare silicon oxide layer（23）；
Second step, graphical top layer silicon（33）On silicon oxide layer（23）, the window needed for forming doping or ion implanting；
3rd step, doping or ion implanting form doped silicon layer（24）；
4th step, the metal that electricity draws pad is formed by deposit, sputtering or evaporation on SOI Substrate front；
5th step, the metal of the electricity extraction pad of graphical 4th step forms the metal Pad that electricity draws pad（22）, shape after annealing
Into Ohmic contact；
6th step, is lithographically formed front etching window（104）Figure, etching gets rid of front etching window（104）In figure
Silicon oxide layer（23）, then using RIE（Reactive Ion Etching, reactive ion etching）Method dry etching continues
Remove top layer silicon（33）, etching stopping is in buried regions silica（32）, in buried regions silica after etching（32）Upper formation silicon cell
（101）, fixing end（102）Structure graph and etch get rid of in window corresponding with back-etching window remaining oxidation
Silicon layer（23）And top layer silicon（33）, the silicon cell for being formed（101）And connected two fixing ends（102）Aoxidized with buried regions
Silicon（32）On remaining top layer silicon be not attached to, same silicon cell（101）Two fixing ends（102）Not with silicon frame bearing
（103）On remaining top layer silicon be connected, also not pass through silicon frame bearing（103）On remaining top layer silicon be connected；
7th step, prepares etch-protecting layer on the front of SOI Substrate, and the etch-protecting layer is covering whole soi wafer just
Face；
8th step, back-etching window is lithographically formed at the SOI Substrate back side（105）After figure, using wet etching or ICP
(Inductively Coupled Plasma, sense coupling) or DRIE（Deep Reactive Ion
Etching, deep reaction ion etching）Dry etching method etching gets rid of the silicon of the SOI Substrate that back-etching window is exposed
Substrate（31）, etching stopping is in buried regions silica（32）；The back-etching window（105）With front etching window（104）
The centre of figure of SOI silicon chip rear projections coincides, back-etching window（105）More than front etching window（104）；
9th step, the buried regions silica exposed from the SOI Substrate back side using hydrofluoric acid solution or hydrofluoric acid aerosol wet etching
（32）, discharge silicon cell（101）；
Tenth step, the etch-protecting layer prepared by the 7th step of removal, dries；
11st step, the silicon to exposing is aoxidized, and forms oxide thin layer silicon layer；
12nd step, the front of SOI Substrate is covered using protective layer, and the protective layer covering removes silicon cell（101）Outside SOI
Substrate front portion；
13rd step, using ALD（Ald）Method prepares hafnia film, or prepares aluminum oxide film, or prepares oxygen
Change hafnium/alumina composite film, or prepare silica/hafnium oxide/alumina composite film, by the 11st step and this step or
Passivation protection layer is formed by the one of step in the 11st step and this step（25）；The passivation protection layer of preparation（25）Cover
Lid silicon cell（101）Outer surface；
14th step, the protective layer that the 12nd step of removal is used, dries；
15th step, along marking groove（106）Scribing is carried out to SOI Substrate, methane transducer is obtained after sliver；
Or preparation method（Two）The step of be：
The first step, the top layer silicon on SOI Substrate front（33）On prepare silicon oxide layer（23）；
Second step, graphical top layer silicon（33）On silicon oxide layer（23）, the window needed for forming doping or ion implanting；
3rd step, doping or ion implanting form doped silicon layer（24）；
4th step, is lithographically formed front etching window（104）Figure, etching gets rid of front etching window（104）In figure
Silicon oxide layer（23）, then using RIE（Reactive Ion Etching, reactive ion etching）Method dry etching continues
Remove top layer silicon（33）, etching stopping is in buried regions silica（32）, in buried regions silica after etching（32）Upper formation silicon cell
（101）, fixing end（102）Structure graph and etch get rid of in window corresponding with back-etching window remaining oxidation
Silicon layer（23）And top layer silicon（33）, the silicon cell for being formed（101）And connected two fixing ends（102）Aoxidized with buried regions
Silicon（32）On remaining top layer silicon be not attached to, same silicon cell（101）Two fixing ends（102）Not with silicon frame bearing
（103）On remaining top layer silicon be connected, also not pass through silicon frame bearing（103）On remaining top layer silicon be connected；
5th step, prepares etch-protecting layer above the front/top layer silicon of SOI Substrate, and the etch-protecting layer covering is whole
The front of soi wafer；
6th step, back-etching window is lithographically formed at the SOI Substrate back side（105）After figure, using wet etching or ICP
(Inductively Coupled Plasma, sense coupling) or DRIE（Deep Reactive Ion
Etching, deep reaction ion etching）Dry etching method etching gets rid of the silicon of the SOI Substrate that back-etching window is exposed
Substrate（31）, etching stopping is in buried regions silica（32）；
7th step, using hydrofluoric acid solution or hydrofluoric acid aerosol wet etching from silicon substrate（31）The buried regions silica for exposing
（32）, discharge hanging silicon cell（101）；
8th step, the etch-protecting layer that the 5th step of removal is formed；
9th step, the silicon to exposing is aoxidized, and forms oxide thin layer silicon layer；
Tenth step, the front of SOI Substrate is covered using protective layer, and the protective layer covering removes hanging silicon cell（101）Outside
SOI Substrate front portion
11st step, using ALD（Ald）Method is in silicon cell（101）Outer surface prepare aluminum oxide or hafnium oxide is thin
Film；
12nd step, using PECVD, (Plasma Enhanced Chemical Vapor Deposition, plasma increases
Extensive chemical vapour deposition process) at 400~450 DEG C in hanging silicon cell（101）Outer surface prepare silicon nitride；By the 9th
Step, the 11st step and this step are prepared into silica/silicon nitride laminated film, or silica/alumina/silicon nitride THIN COMPOSITE
Film, or hafnium oxide/silicon nitride laminated film, or silica/hafnium oxide/aluminum oxide/silicon nitride meet film, form passivation protection
Layer（25）；The passivation protection layer of preparation（25）Covering silicon cell（101）Outer surface；
13rd step, the protective layer that the tenth step of removal is used, dries；
14th step, photoresist is prepared in SOI Substrate front, and the metal Pad that electricity draws pad is formed after photoetching（22）Figure；
15th step, the metal that electricity draws pad is prepared by sputtering or depositing；
16th step, removes photoresist prepared by the 14th step, only in fixing end（102）It is upper to form the gold that electricity draws pad
Category Pad（22）, dry, Ohmic contact is formed after annealing；
17th step, along marking groove（106）Scribing is carried out to SOI Substrate, methane transducer is obtained after sliver；
Or preparation method（Three）The step of be：
The first step is to the 13rd same preparation method of step（Two）The first step to the 13rd step,
Version is sheltered in 14th step, preparation, and the electricity on the figure for sheltering version and SOI Substrate draws the metal Pad of pad（22）
Figure it is identical；
15th step, prepares the metal Pad that electricity draws pad（22）, SOI Substrate front is placed in by version is sheltered described in the 14th step
On and be aligned after splash-proofing sputtering metal, only in fixing end（102）On formed electricity draw pad metal Pad（22）, shape after annealing
Into Ohmic contact；
16th step, along marking groove（106）Scribing is carried out to SOI Substrate, methane transducer is obtained after sliver.
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| US10234412B2 (en) * | 2016-11-04 | 2019-03-19 | Msa Technology, Llc | Identification of combustible gas species via pulsed operation of a combustible gas sensor |
| CN108181350B (en) * | 2017-12-29 | 2020-07-03 | 中国矿业大学 | Resistance matching adjustment method of MEMS (micro-electromechanical systems) methane sensor |
| CN112034005B (en) * | 2020-09-08 | 2022-05-10 | 苏州芯镁信电子科技有限公司 | Indirectly-heated silicon-based film catalytic hydrogen sensor and processing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211861A (en) * | 2006-12-26 | 2008-07-02 | 北京大学 | Integrated micro-sensor preparation method |
| CN103743790A (en) * | 2014-01-03 | 2014-04-23 | 南京信息工程大学 | MEMS (Micro-Electromechanical System)-based micro-mechanical sensor |
| CN104034759A (en) * | 2014-06-04 | 2014-09-10 | 苏州能斯达电子科技有限公司 | MEMS (micro-electromechanical system) semiconductor gas sensor as well as manufacturing method thereof and gas detection method |
| CN204154678U (en) * | 2014-10-31 | 2015-02-11 | 中国矿业大学 | Total silicon MEMS methane transducer |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100701152B1 (en) * | 2005-12-08 | 2007-03-28 | 한국전자통신연구원 | Monolithic MEMS sensor without step and method of fabricating the same MEMS sensor |
| US8410560B2 (en) * | 2010-01-21 | 2013-04-02 | Cambridge Cmos Sensors Ltd. | Electromigration reduction in micro-hotplates |
| CN102735712B (en) * | 2012-06-15 | 2014-08-27 | 电子科技大学 | Micro-well based gas sensor array and its making method |
| CN203519541U (en) * | 2013-09-26 | 2014-04-02 | 中国矿业大学 | Recoverable repeatedly prepared gas micro-sensor |
| CN103482562B (en) * | 2013-09-26 | 2015-06-24 | 中国矿业大学 | Tiny gas sensor of laminated structure and preparation method of micro-gas sensor |
| CN103472097B (en) * | 2013-09-26 | 2015-05-13 | 中国矿业大学 | Micro gas sensor recoverable for repeated preparation and preparation method thereof |
| CN203519540U (en) * | 2013-09-26 | 2014-04-02 | 中国矿业大学 | Single chip gas micro-sensor |
| CN104316575B (en) * | 2014-10-31 | 2017-05-31 | 中国矿业大学 | Total silicon MEMS methane transducers and gas management application and preparation method |
-
2014
- 2014-10-31 CN CN201410607031.3A patent/CN104316575B/en active Active
-
2015
- 2015-10-28 WO PCT/CN2015/093096 patent/WO2016066106A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211861A (en) * | 2006-12-26 | 2008-07-02 | 北京大学 | Integrated micro-sensor preparation method |
| CN103743790A (en) * | 2014-01-03 | 2014-04-23 | 南京信息工程大学 | MEMS (Micro-Electromechanical System)-based micro-mechanical sensor |
| CN104034759A (en) * | 2014-06-04 | 2014-09-10 | 苏州能斯达电子科技有限公司 | MEMS (micro-electromechanical system) semiconductor gas sensor as well as manufacturing method thereof and gas detection method |
| CN204154678U (en) * | 2014-10-31 | 2015-02-11 | 中国矿业大学 | Total silicon MEMS methane transducer |
Non-Patent Citations (1)
| Title |
|---|
| "基于FBG 传感技术的微机电甲烷传感器";张渤;《煤炭技术》;20140630;第33卷(第06期);全文 * |
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