CN204154678U - Total silicon MEMS methane transducer - Google Patents
Total silicon MEMS methane transducer Download PDFInfo
- Publication number
- CN204154678U CN204154678U CN201420646976.1U CN201420646976U CN204154678U CN 204154678 U CN204154678 U CN 204154678U CN 201420646976 U CN201420646976 U CN 201420646976U CN 204154678 U CN204154678 U CN 204154678U
- Authority
- CN
- China
- Prior art keywords
- silicon
- layer
- monox
- stiff end
- well heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
A kind of total silicon MEMS methane transducer, uses under being applicable to industrial and mineral environment.Belong to the methane transducer adopting microelectromechanical systems process technology especially.Comprise silicon cell, stiff end and silicon frame bearing; Described silicon frame bearing is SOI substrate, and comprise silicon substrate, establish top layer silicon on buried regions monox on a silicon substrate and buried regions monox, top layer silicon is monocrystalline silicon; This total silicon MEMS sensor adopts monocrystalline silicon as the heating material of heating element, and heating element simultaneously as methane sensitive element, and does not need catalyst support and catalyst material can realize the detection of low-concentration methane.This total silicon MEMS methane transducer is that substrate adopts MEMS technology processing with soi wafer, processing technology and CMOS technology compatibility.This total silicon MEMS sensor have low in energy consumption, highly sensitive, not by anoxic impact, not by carbon distribution, poisoning etc. because of catalyzer bring the feature affected.
Description
Technical field
The utility model relates to methane transducer, is particularly useful for the total silicon MEMS methane transducer used in preventing gas during a kind of industrial and mineral is produced.
Background technology
The current catalytic combustion type methane transducer heated based on traditional platinum filament is still in underground coal mine widespread use.Its principle is the catalyst combustion reaction heat release effect based on methane gas, there is its shortcomings owing to using catalyzer.As short in the adjustment cycle, carbon distribution, poisoning, activation etc. are fundamentally come to use catalyzer and catalyst support.Existing catalytic combustion type methane transducer adopts the coil of the noble metal coilings such as platinum filament as heating element, is difficult to mass production and consistance is poor, and power consumption is larger.Therefore, the application demand of Internet of Things to methane transducer is not well positioned to meet.Existing heat-conducted firedamp sensor at underground coal mine for detecting the methane gas based on methane of high concentration, low due to sensitivity lower than the methane gas based on methane of 4% for low concentration, cannot detection alarm be used for.
Summary of the invention
Technical matters: it is simple that the purpose of this utility model is to provide a kind of structure, do not use catalyzer, can detect that concentration is lower than 4% methane gas based on methane, produces total silicon MEMS methane transducer easily.
Technical scheme: total silicon MEMS methane transducer of the present utility model comprises silicon cell, stiff end and silicon frame bearing; Described silicon frame bearing is SOI substrate, and comprise silicon substrate, establish top layer silicon on buried regions monox on a silicon substrate and buried regions monox, top layer silicon is monocrystalline silicon;
On the buried regions monox of described stiff end on silicon frame bearing; Described stiff end comprises the silicon oxide layer outside silicon layer, silicon layer and is used as the metal level that electricity draws pad Pad; The silicon layer of stiff end is located on buried regions monox; Doped silicon layer is provided with in the support silicon layer of described stiff end; The metal level that described electricity draws pad Pad is located on the silicon oxide layer on silicon layer; Metal level directly contacts with the doped silicon layer of stiff end and forms Ohmic contact, and the two contact portion does not have silicon oxide layer;
Described silicon cell comprises silicon oxide layer outside silicon layer, silicon layer and passivation protection layer, described silicon cell be provided with silicon well heater, two symmetrically arranged for supporting silicon well heater and providing the silicon cantilever of electrical connection, the length at least 300um of described silicon cantilever for silicon well heater; One end of described single silicon cantilever is connected with silicon well heater, and the other end is connected with the stiff end on silicon frame bearing, and silicon well heater is suspended from air by two silicon cantilevers; Two silicon cantilevers are preferably and parallelly form U-shaped cantilever design side by side, with silicon overall heater; Silicon well heater can be the parallel connection of multiple silicon fire-bar, to have larger surface area; Described passivation protection layer is monox, or hafnia, or silica/alumina composite bed, or hafnia/aluminum oxide composite layers, or hafnia/silicon nitride composite bed, or aluminium oxide/silicon nitride composite bed, or monox/silicon nitride composite bed, or the composite bed that monox, hafnia, aluminium oxide, silicon nitride different materials are combined to form; The wherein thickness of monox at least 10nm, the thickness of hafnia is at least 5um, aluminium oxide thickness at least 6nm, and silicon nitride thickness is 10nm at least, and the thickness of whole passivation protection layer is no more than 1um;
The silicon layer of described silicon cell and the silicon layer of stiff end are both a part for the top layer silicon of SOI substrate, and be namely both a part for the top layer silicon of silicon frame bearing, shaped by top layer silicon, thickness is identical; But be not connected with other top layer silicon of silicon frame bearing; Only be connected with the silicon layer of silicon cell between the silicon layer of two stiff ends.
Beneficial effect: the silicon cell of total silicon MEMS methane transducer of the present utility model and silicon well heater take silicon as heating material, not use metal as heating material, its silicon well heater by the support of silicon cantilever away from silicon substrate hang in atmosphere can electrified regulation to the high temperature of more than 500 DEG C, do not use catalyzer, the MEMS processing technology of employing and CMOS compatible.Owing to have employed such scheme, there is following effective effect:
The silicon well heater discharged from soi wafer is outstanding in atmosphere, well reduces the thermal loss by soi wafer, silicon well heater can be heated to the high temperature of more than 500 DEG C with lower power; Methane transducer of the present utility model is not containing catalyzer and catalytic carrier, and therefore, the performance of sensor, by the impact of catalyzer, does not exist catalyst activity and reduces the problems such as the sensitivity decrease caused, poisoning, activation; Significantly for low-concentration methane gas; Methane transducer of the present utility model has higher sensitivity, can reach 10mV/CH
4%, such sensitivity directly can promote instrument, reaches the requirement of national standard.
1, total silicon MEMS methane transducer of the present utility model take silicon cell as heating element and methane detection element, does not use catalyzer can realize the detection of low-concentration methane gas (0 ~ 5%); The structure of silicon well heater of the present utility model is the parallel form of multiple silicon fire-bar, has the larger pyrometric scale area contacted with air, can with high sensitivity technique low-concentration methane; The sensitivity of total silicon MEMS methane transducer of the present utility model can reach 10mV/CH
4%, directly can promote instrument, meets national standard requirement.
3, methane transducer of the present utility model is not containing catalyzer and catalytic carrier, and therefore, the performance of sensor, by the impact of catalyzer, does not exist catalyst activity and reduces the problems such as the sensitivity decrease caused, poisoning, activation;
4, the silicon well heater of total silicon MEMS methane transducer of the present utility model is outstanding in atmosphere and away from silicon substrate by the support of silicon cantilever, distance is greater than more than 300um, silicon well heater can be heated to the high temperature of more than 500 DEG C with lower power, therefore there is advantage low in energy consumption, power consumption about 80 ~ 90mW during single silicon cell work.
5, the monocrystalline silicon of the employing stable performance of the silicon cell of total silicon MEMS methane transducer of the present utility model obtains through MEMS technology processing, and this makes methane transducer of the present utility model under hot operation state, have good stability and long life-span.The shortcomings such as the high temperature of the METAL HEATING PROCESS such as platinum, tungsten material more than 500 degrees Celsius easily volatilizees, distils this is because monocrystalline silicon does not exist, migration, also do not exist polysilicon resistance at high temperature grain boundary resistance be easy to the shortcoming that changes, cannot control.Meanwhile, the passivation layer arranged at the outside surface of silicon cell of the present utility model also reduces the impact of external environment on above-mentioned components and parts, thus further increases the stability of methane transducer performance of the present utility model.
6, total silicon MEMS methane transducer size of the present utility model is little, low in energy consumption, and fast response time, can reach about 40ms, linearity of output signal is good.
Advantage: the total silicon MEMS methane transducer that the utility model provides has highly sensitive response signal to low-concentration methane, its preparation method can be compatible with CMOS technology, low, the easy batch production of cost and calibration, there is good consistance, interchangeability, methane transducer size of the present utility model is little, fast response time, biosensor power consumption are low, highly sensitive, linearity of output signal is good, the life-span is long; Sensor performance, not by catalysts influence, need not consider the complex effects of catalyzer, simple when the performance of sensor is carried out to complex optimum and compensated.
Accompanying drawing explanation
Fig. 1 is that total silicon MEMS firedamp sensor of the present utility model is in the on-chip schematic top plan view of SOI.
Fig. 2 is the schematic top plan view of the total silicon MEMS firedamp sensor of the present utility model after scribing.
Fig. 3 is the A-A cross-sectional view in the utility model Fig. 1, Fig. 2.
Fig. 4 is a kind of structural representation of silicon well heater of the present utility model.
Fig. 5 is the current-resistance family curve of the silicon cell of total silicon MEMS methane transducer of the present utility model.
Fig. 6 is the methane resonse characteristic of total silicon MEMS methane transducer of the present utility model.
In figure: 101-silicon cell, 102-stiff end, 103-silicon frame bearing; 104-front etching window, 105-back-etching window, 106-is along marking groove; 1011-silicon well heater, 1012-silicon cantilever, 1013-silicon fire-bar; 21-silicon layer, 22-electricity draws the metal of pad, 23-silicon oxide layer; 24-doped silicon layer, 25-passivation protection layer, 31-silicon substrate; 32-buried regions monox, 33-top layer silicon.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is further described:
Embodiment: in Fig. 1, Fig. 2, Fig. 3, this total silicon MEMS methane transducer comprises silicon cell 101, stiff end 102 and silicon frame bearing 103; Described silicon frame bearing 103 is SOI substrate, and comprise silicon substrate 31, be located at the buried regions monox 32 on silicon substrate 31 and the top layer silicon 33 on buried regions monox 32, top layer silicon 33 is monocrystalline silicon;
On the buried regions monox 32 of described stiff end 102 on silicon frame bearing 103; Described stiff end 102 comprises the silicon oxide layer 23 outside silicon layer 21, silicon layer 21 and is used as the metal Pad 22 that electricity draws pad; The silicon layer 21 of stiff end 102 is located on buried regions monox 12; Doped silicon layer 24 is provided with in the support silicon layer 21 of described stiff end 102; The metal Pad 22 that described electricity draws pad is located on the silicon oxide layer 23 on silicon layer 21; Metal level 22 directly contacts with the doped silicon layer 24 of stiff end 102 and forms Ohmic contact, and the two contact portion does not have silicon oxide layer 23;
Described silicon cell 101 comprises silicon oxide layer 23 outside silicon layer 21, silicon layer 21 and passivation protection layer 25, it is symmetrically arranged for supporting silicon well heater 1011 and providing the silicon cantilever 1012 of electrical connection, the length at least 300um of described silicon cantilever 1012 for silicon well heater 1011 that described silicon cell 101 is provided with silicon well heater 1011, two; One end of described single silicon cantilever 1012 is connected with silicon well heater 1011, and the other end is connected with the stiff end 102 on silicon frame bearing 103, and silicon well heater 1011 is suspended from air by two silicon cantilevers 1012; Two silicon cantilevers 1012 are preferably and parallelly form U-shaped cantilever design side by side, with silicon well heater 1011 entirety; Described passivation protection layer 25 is monox, or hafnia, or silica/alumina composite bed, or hafnia/aluminum oxide composite layers, or hafnia/silicon nitride composite bed, or aluminium oxide/silicon nitride composite bed, or monox/silicon nitride composite bed, or the composite bed that monox, hafnia, aluminium oxide, silicon nitride different materials are combined to form; The wherein thickness of monox at least 10nm, the thickness of hafnia is at least 5um, aluminium oxide thickness at least 6nm, and silicon nitride thickness is 10nm at least, and the thickness of whole passivation protection layer is no more than 1um;
Silicon layer 21 and the silicon layer 21 of stiff end 102 of described silicon cell 101 are both a part for the top layer silicon 33 of SOI substrate, and be namely both a part for the top layer silicon 33 of silicon frame bearing 103, shaped by top layer silicon 33, thickness is identical; But be not connected with other top layer silicon 33 of silicon frame bearing 103; Only be connected with the silicon layer 21 of silicon cell between the silicon layer 21 of two stiff ends 102.
Silicon well heater 1011 is as shown in Figure 4 parallel connections of multiple silicon fire-bar 1013, and to increase the pyrometric scale area contacted with air, silicon well heater 1011 also can be toroidal.
Fig. 5 is the current-resistance family curve of total silicon MEMS methane transducer of the present utility model.
A kind of total silicon MEMS methane transducer and gas management application process, silicon cell 101 is made to work in operating point regions in current-resistance family curve on the left of turning point by applying voltage or pass to electric current on two stiff ends 102 of the silicon cell 101 of described total silicon MEMS methane transducer, the silicon well heater 1011 of silicon cell 101 is generated heat, heating-up temperature more than 500 degrees Celsius, power consumption about 80 ~ 90mW when single silicon cell 101 works, described turning point is that electrical resistance curtage increases the point of greatest resistance occurred, when curtage continues to increase, resistance does not increase in continuation and reduces on the contrary, when there being methane gas to occur, the temperature of the silicon well heater 1011 of total silicon MEMS methane transducer reduces, the resistance of silicon cell 101 is changed, use the silicon cell 101 of the total silicon MEMS methane transducer described in two to form Wheatstone bridge and detect brachium pontis detection methane concentration, the silicon cell 101 of one of them total silicon MEMS methane transducer contacts with surrounding air, the silicon cell 101 of another total silicon MEMS methane transducer is air-tight packaging, gas in encapsulation and surrounding air are isolated to be sealed, when there is methane gas, the output voltage of favour stone detection electric bridge changes because silicon cell 101 resistance contacted with surrounding air reduces, the output voltage that favour stone detects electric bridge increases with methane concentration and reduces, realize the detection to methane gas, 10mV/CH can be reached to the detection sensitivity of low-concentration methane gas (0 ~ 4%)
4%, the response time can reach about 40ms.
Fig. 6 is the methane resonse characteristic of total silicon MEMS methane transducer of the present utility model.
Claims (1)
1. a total silicon MEMS methane transducer, is characterized in that: it comprises silicon cell (101), stiff end (102) and silicon frame bearing (103); Described silicon frame bearing (103) is SOI substrate, and comprise silicon substrate (31), be located at the buried regions monox (32) on silicon substrate (31) and the top layer silicon (33) on buried regions monox (32), top layer silicon (33) is monocrystalline silicon;
Described stiff end (102) is located on the buried regions monox (32) on silicon frame bearing (103); Described stiff end (102) comprises silicon layer (21), silicon layer (21) silicon oxide layer outward (23) and is used as the metal Pad(22 that electricity draws pad); The silicon layer (21) of stiff end (102) is located on buried regions monox (12); Doped silicon layer (24) is provided with in the silicon layer (21) of described stiff end (102); Described electricity draws the metal Pad(22 of pad) be located on silicon layer (21) silicon oxide layer (23) on; Metal level (22) directly contacts with the doped silicon layer (24) of stiff end (102) and forms Ohmic contact, and the two contact portion does not have silicon oxide layer (23);
Described silicon cell (101) comprises silicon layer (21), silicon layer (21) silicon oxide layer outward (23) and passivation protection layer (25), described silicon cell (101) be provided with silicon well heater (1011), two symmetrically arranged for supporting silicon well heater (1011) and providing the silicon cantilever (1012) of electrical connection, the length at least 300um of described silicon cantilever (1012) for silicon well heater (1011); One end of described single silicon cantilever (1012) is connected with silicon well heater (1011), and the other end is connected with the stiff end (102) on silicon frame bearing (103), and silicon well heater (1011) is suspended from air by two silicon cantilevers (1012); Two silicon cantilevers (1012) are preferably and parallelly form U-shaped cantilever design side by side, with silicon well heater (1011) entirety; Described passivation protection layer (25) is monox, or hafnia, or silica/alumina composite bed, or hafnia/aluminum oxide composite layers, or hafnia/silicon nitride composite bed, or aluminium oxide/silicon nitride composite bed, or monox/silicon nitride composite bed, or the composite bed that monox, hafnia, aluminium oxide, silicon nitride different materials are combined to form; The wherein thickness of monox at least 10nm, the thickness of hafnia is at least 5um, aluminium oxide thickness at least 6nm, and silicon nitride thickness is 10nm at least, and the thickness of whole passivation protection layer is no more than 1um;
The silicon layer (21) of described silicon cell (101) and the silicon layer (21) of stiff end (102) are both a part for the top layer silicon (33) of SOI substrate, namely a part for the top layer silicon (33) of silicon frame bearing (103) is both, shaped by top layer silicon (33), thickness is identical; But be not connected with other top layer silicon (33) of silicon frame bearing (103); Only be connected with the silicon layer (21) of silicon cell between the silicon layer (21) of two stiff ends (102).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420646976.1U CN204154678U (en) | 2014-10-31 | 2014-10-31 | Total silicon MEMS methane transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420646976.1U CN204154678U (en) | 2014-10-31 | 2014-10-31 | Total silicon MEMS methane transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204154678U true CN204154678U (en) | 2015-02-11 |
Family
ID=52512782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420646976.1U Withdrawn - After Issue CN204154678U (en) | 2014-10-31 | 2014-10-31 | Total silicon MEMS methane transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204154678U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316575A (en) * | 2014-10-31 | 2015-01-28 | 中国矿业大学 | Full-silicon MEMS (micro-electromechanical system) methane sensor, gas detection application and preparation method of full-silicon MEMS methane sensor |
-
2014
- 2014-10-31 CN CN201420646976.1U patent/CN204154678U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316575A (en) * | 2014-10-31 | 2015-01-28 | 中国矿业大学 | Full-silicon MEMS (micro-electromechanical system) methane sensor, gas detection application and preparation method of full-silicon MEMS methane sensor |
| WO2016066106A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | All-silicon mems methane sensor, fuel gas detection application, and manufacturing method |
| CN104316575B (en) * | 2014-10-31 | 2017-05-31 | 中国矿业大学 | Total silicon MEMS methane transducers and gas management application and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101639391B (en) | Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof | |
| CN104316575A (en) | Full-silicon MEMS (micro-electromechanical system) methane sensor, gas detection application and preparation method of full-silicon MEMS methane sensor | |
| CN104316574A (en) | Methane sensor based on single heating element, preparation method and application | |
| KR20010037655A (en) | Low Power type Ceramic Gas Sensor Fabricated by Micromachining Technology and Fabrication Method Thereof | |
| CN104155051A (en) | Wide range graphene high temperature pressure sensor | |
| CN104316576B (en) | MEMS methane transducers based on silicon heater and preparation method and application | |
| CN204154677U (en) | Based on the MEMS methane transducer of silicon well heater | |
| CN108313972A (en) | A kind of hydrogen gas sensor and its processing method and purposes | |
| CN108362740B (en) | Metal oxide semiconductor gas sensor and manufacturing method thereof | |
| CN204154678U (en) | Total silicon MEMS methane transducer | |
| CN204154680U (en) | A kind of MEMS methane transducer | |
| US20200239300A1 (en) | Hydrogen sensor on medium or low temperature solid micro heating platform | |
| CN103472097A (en) | Micro gas sensor recoverable for repeated preparation and preparation method thereof | |
| CN203519540U (en) | Single-chip micro-gas sensor | |
| CN103499617B (en) | Monolithic micro-gas sensor and manufacturing method thereof | |
| CN111443114A (en) | Catalytic gas sensor element, processing method and catalytic gas sensor | |
| CN103482562B (en) | Micro-gas sensor with laminated structure and preparation method thereof | |
| CN203513269U (en) | Micro-gas sensor with laminated structure | |
| CN204154679U (en) | A kind of methane transducer based on single heating element | |
| CN104316577B (en) | A kind of methane transducer based on flip chip bonding encapsulation and preparation method and application | |
| CN201203591Y (en) | Low-power consumption thermal insulation double-module integrated humidity sensor chip with heat purification function | |
| KR100906496B1 (en) | Gas sensor and method for manufacturing the same | |
| CN203519541U (en) | Recoverable repeatedly prepared gas micro-sensor | |
| CN104316578B (en) | A kind of MEMS methane transducers and its application and preparation method | |
| KR100540972B1 (en) | Micro gas sensor with micro pillar structure and the fabricating method of the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150211 Effective date of abandoning: 20170531 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20150211 Effective date of abandoning: 20170531 |