CN203513269U - Micro gas sensor of overlapped structure - Google Patents
Micro gas sensor of overlapped structure Download PDFInfo
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- CN203513269U CN203513269U CN201320600030.7U CN201320600030U CN203513269U CN 203513269 U CN203513269 U CN 203513269U CN 201320600030 U CN201320600030 U CN 201320600030U CN 203513269 U CN203513269 U CN 203513269U
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Abstract
A micro gas sensor of an overlapped structure comprises a single-chip gas micro-reactor and a single-chip temperature detector, wherein the single-chip gas micro-reactor and the single-chip temperature detector are machined through the MEMS technology and connected through keys to form the micro gas sensor of the overlapped structure. The single-chip gas micro-reactor heats catalyst carriers alone. The single-chip temperature detector detects the temperature rise of the single-chip gas micro-reactor alone, wherein the temperature rise is caused by the gas catalytic combustion reaction. The single-chip temperature detector is not influenced by the voltage or the current on the single-chip gas micro-reactor in the measurement process, and the single-chip gas micro-reactor and the single-chip temperature detector are not electrically connected with each other and are independent of each other. The manufacturing technology of the micro gas sensor is compatible with the CMOS technology; the micro gas sensor can control the single-chip gas micro-reactor and the single-chip temperature detector independently, and therefore various working modes can be achieved; the micro gas sensor is simple in configuration, easy to operate, low in power consumption, high in flexibility and stable in performance.
Description
Technical field
The utility model relates to micro-firedamp sensor of a kind of micro-firedamp sensor, particularly a kind of laminated construction based on micro-electronic mechanical system technique and encapsulation technology.
Background technology
Still extensive use under coal mine of catalytic combustion type gas sensor based on traditional platinum filament heating at present, but its power consumption is larger, is not well positioned to meet the application demand of Internet of Things to low-power consumption firedamp sensor.And other firedamp sensor also cannot adapt to the environment of high humility under coal mine.The firedamp sensor of existing report, adopts metal platinum resistance as heating element heater more, and this RTD is simultaneously also as temperature element.Because heating element heater, temperature element are same RTDs, this makes thermometric many advanced technologies be subject to be applied to the restriction of heating voltage on RTD or electric current simultaneously and cannot apply, and has limited the development of gas detection technique.
Utility model content
The purpose of this utility model is to overcome the problem existing in prior art, and a kind of micro-firedamp sensor of the laminated construction based on micro-electronic mechanical system technique and encapsulation technology is provided
Micro-firedamp sensor of laminated construction of the present utility model, comprises monolithic gas microreactor and monolithic Temperature Detector; Described monolithic gas microreactor comprises: silicon frame bearing, heating element heater, 2 stiff ends, 2 bonding-stiff ends, a plurality of electrode leads to client, a plurality of bonding support end, metal salient point and catalyst carriers; Described silicon frame bearing comprises silicon substrate and buried regions silica; Described stiff end, bonding-stiff end, bonding support end are independently located on the buried regions silica of silicon frame bearing mutually; Stiff end comprises and supports silicon layer, is located at the silicon oxide layer that supports outside silicon layer, is located at the metal level on silicon oxide layer, in the support silicon layer of described stiff end, is provided with doped silicon layer, the window of metal level by the silicon oxide layer formation Ohmic contact that contacts with doped silicon layer; Bonding-stiff end, electrode leads to client and bonding support end include and support silicon layer, be located at the silicon oxide layer that supports outside silicon layer, be located at the metal level on silicon oxide layer; Heating element heater comprises support silicon layer, is located at the silicon oxide layer supporting outside silicon layer; Electrode leads to client is also located on the buried regions silica of silicon frame bearing; Each bonding-stiff end, stiff end all one end of the electrode leads to client corresponding with are connected, and especially metal level is connected; Electrode leads to client is provided with electricity and draws pad Pad region, and electricity is drawn the better other end that is located at electrode leads to client in pad Pad region, and the electricity that connects external circuit and electrode leads to client with lead-in wire is drawn pad Pad region; Described heating element heater is provided with silicon heater, two symmetrically arranged silicon cantilevers, and silicon heater is preferably annular, the better heat radiation-support silico briquette stretched in two symmetries that is provided with in the middle of annular silicon heater; One end of described silicon cantilever is connected with silicon micro-heater, and the other end is connected with the stiff end on silicon frame bearing; The silicon heater of described heating element heater is provided with catalyst carrier, and the silicon heater of heating element heater is embedded in catalyst carrier completely, and catalyst carrier is in silicon heater, and especially catalyst carrier is an overall structure; On the metal level of bonding-stiff end, bonding support end, be provided with metal salient point; The better the same side that is all located at silicon frame bearing of electrode leads to client and stiff end, putting in order is an electrode leads to client, stiff end, another stiff end, another electrode leads to client;
Described monolithic Temperature Detector comprises silicon frame bearing, silicon temperature measuring unit, 2 stiff ends, some bonding support ends; Described silicon temperature measuring unit is provided with silicon thermal detector, two symmetrically arranged silicon linking arms, 2 symmetrically arranged silicon support arms; Described silicon thermal detector, silicon linking arm, silicon support arm, stiff end are connected successively; Described silicon thermal detector is better has cranky shape to have the heating surface area of larger covering silicon heater; Described silicon frame bearing comprises silicon substrate and buried regions silica; Described bonding support end, stiff end are all located on the buried regions silica of silicon frame bearing, and described bonding support end, stiff end include and support silicon layer, be located at the silicon oxide layer that supports outside silicon layer, be located at the metal level on silicon oxide layer; The support silicon layer of stiff end is provided with doped silicon layer, and metal level is by the window of silicon oxide layer and the doped silicon layer of the stiff end formation Ohmic contact that contacts; Silicon temperature measuring unit comprises support silicon layer, is located at the silicon oxide layer supporting on silicon layer, and silicon temperature measuring unit is fixed on the buried regions silica on silicon frame bearing by stiff end;
2 stiff ends of monolithic Temperature Detector are with corresponding on distance, position with 2 bonding-stiff ends of monolithic gas microreactor respectively, the bonding support end that the bonding support end of monolithic Temperature Detector is corresponding with monolithic gas microreactor is corresponding in position, and monolithic gas microreactor is closely connected by metal salient point with monolithic Temperature Detector; The silicon temperature measuring unit of monolithic Temperature Detector is positioned at directly over the heating element heater that has catalyst carrier of monolithic gas microreactor; An electrode leads to client that is positioned at outside of monolithic gas microreactor, bonding-stiff end and on metal salient point, monolithic Temperature Detector a stiff end, silicon temperature measuring unit, another stiff end of monolithic Temperature Detector, another bonding-stiff end of monolithic gas microreactor and on another of metal boss and monolithic gas microreactor be positioned at two end thermometric device paths of electrode leads to client formation in outside; The size that the size of monolithic Temperature Detector is less than monolithic gas microreactor makes the electricity of the electrode leads to client of monolithic gas microreactor draw pad Pad region by monolithic Temperature Detector, not covered, and can carry out Bonding.
Beneficial effect, owing to having adopted such scheme, the heating element heater of monolithic gas microreactor of micro-firedamp sensor of laminated construction of the present utility model and the temperature element of monolithic Temperature Detector adopt MEMS processes to discharge from soi wafer; Temperature Detector monolithic made simultaneously and passed through encapsulation and aim at and encapsulate fixing with gas microreactor; Between the heating element heater of the two monolithic gas microreactor and the temperature element of monolithic Temperature Detector, also directly contact; Effectively reduce the heat power consumption that adds of monolithic gas microreactor; The heat that gas microreactor discharges is mainly detected by Temperature Detector by heat conduction and the thermal-radiating mode of air.Than arranging, process independently gas microreactor and the independently mode of Temperature Detector on a soi wafer, Temperature Detector in structure of the present utility model has the larger heating surface area relative with gas microreactor, therefore can more effectively independently obtain the temperature information of gas microreactor, thereby obtain higher sensitivity.Micro-firedamp sensor of laminated construction of the present utility model is no longer subject to traditional single element heating restriction multiplexing with temp sensing function, can regulate and control separately heating element heater, separately temperature element be detected.Respectively heating element heater and temperature element are regulated and controled, can be sensor multifarious mode of operation is provided, and configuration is simple, the combination property flexible, that therefore improved sensor of working.Solve multiplexing the brought problem of platinum wire resistance element of existing catalytic combustion type gas sensor, be the problem that same platinum wire resistance cannot regulate and control respectively when controlling temperature and measuring temperature as heating element heater and temperature element simultaneously, also solved the problem of further lifting sensitivity simultaneously.
Advantage: the heating element heater of the silicon cantilever support of monolithic gas microreactor is conducive to improve the electricity-heating efficiency of heater, compares have longer service life with platinum filament; The silicon heater load integer catalyzer of the heating element heater of gas microreactor, all-in-one-piece catalyst wraps up silicon heater comprehensively, has reduced a heat dissipation path of heater, thereby has utilized efficiently the heat of heater; Simultaneous temperature detector has more heating surface area, and therefore when guaranteeing low-power consumption, sensitivity is higher.Micro-firedamp sensor of the laminated construction providing, its preparation method can with CMOS process compatible, batch making can reduce costs and improve uniformity; Can meet the demand of colliery subsurface environment Internet of Things to firedamp sensor.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of micro-firedamp sensor of laminated construction of the present utility model.
Fig. 2 is the monolithic gas microreactor of not making catalyst carrier and catalyst of the present utility model.
Fig. 3 is the plan structure figure of monolithic Temperature Detector of the present utility model.
Fig. 4 is the plan structure figure that load of the present utility model has the monolithic gas microreactor after catalyst carrier.
Fig. 5 is the structural representation of the stiff end of monolithic Temperature Detector of the present utility model, along cantilever, stretches out the cross-sectional view of direction.
Fig. 6 is the structural representation after the silicon heater load catalyst carrier of monolithic gas microreactor of the present utility model, i.e. B-B cross-sectional view in Fig. 4.
The specific embodiment
Below in conjunction with accompanying drawing, an embodiment of the present utility model is further described:
Embodiment 1: micro-firedamp sensor of this laminated construction comprises monolithic gas microreactor 1 and the monolithic Temperature Detector 2 shown in Fig. 1, Fig. 2, Fig. 3, Fig. 6, Fig. 7, Fig. 8;
Described monolithic gas microreactor 1 comprises: silicon frame bearing 101,102,2 bonding-stiff ends 1021 of 103,2 stiff ends of heating element heater, a plurality of electrode leads to client 104, a plurality of bonding support end 301, metal salient point 400 and catalyst carrier 105; Described silicon frame bearing 101 comprises silicon substrate 11 and buried regions silica 12, as shown in Figure 4; Described stiff end 102, bonding-stiff end 1021, bonding support end 301 are independently located on the buried regions silica 12 of silicon frame bearing 101 mutually; Stiff end 102 comprises and supports silicon layer 21, is located at the silicon oxide layer 23 that supports outside silicon layer 21, is located at the metal level 22 on silicon oxide layer 23, in the support silicon layer 21 of described stiff end 102, be provided with doped silicon layer 24, the window of metal level 22 by the silicon oxide layer 23 formation Ohmic contact that contacts with doped silicon layer 24; Bonding-stiff end 1021, electrode leads to client 104 include with bonding support end 301 and support silicon layer 21, be located at the silicon oxide layer 23 that supports outside silicon layer 21, be located at the metal level 22 on silicon oxide layer 23; Heating element heater 103 comprises support silicon layer 21, is located at the silicon oxide layer 23 supporting outside silicon layer 21; Electrode leads to client 104 is also located on the buried regions silica 12 of silicon frame bearing 101; Each bonding-stiff end 1021, stiff end 102 all one end of the electrode leads to client 104 corresponding with are connected, and especially metal level 22 is connected; Electrode leads to client 104 is provided with electricity and draws pad Pad region, and electricity is drawn the better other end that is located at electrode leads to client 104 in pad Pad region, and the electricity that connects external circuit and electrode leads to client 104 with lead-in wire is drawn pad Pad region; Described heating element heater 103 is provided with silicon heater 1031, two symmetrically arranged silicon cantilevers 1032, silicon heater 1031 is preferably annular, better heat radiation-support the silico briquette 1033 stretched in two symmetries that is provided with in the middle of annular silicon heater 1031, as shown in Fig. 1, Fig. 6; One end of described silicon cantilever 1032 is connected with silicon micro-heater 1031, and the other end is connected with the stiff end 102 on silicon frame bearing 101; The silicon heater 1031 of described heating element heater 103 is provided with catalyst carrier 105, the silicon heater 1031 of heating element heater 103 is embedded in catalyst carrier 105 completely, and catalyst carrier 105 is in silicon heater 1031, especially catalyst carrier 105 is overall structures, as shown in Fig. 3, Fig. 5; On the metal level 22 of bonding-stiff end 1021, bonding support end 301, be provided with metal salient point 400; Electrode leads to client 1021 and the better the same side that is all located at silicon frame bearing 101 of stiff end 102, putting in order is an electrode leads to client, stiff end, another stiff end, another electrode leads to client;
Described monolithic Temperature Detector 2 comprises silicon frame bearing 101,203,2 stiff ends 202 of silicon temperature measuring unit, some bonding support ends 301; Described silicon temperature measuring unit 203 is provided with silicon thermal detector 2031, two 2033,2 symmetrically arranged silicon support arms 2032 of symmetrically arranged silicon linking arm; Described silicon thermal detector 2031, silicon linking arm 2033, silicon support arm 2033, stiff end 202 are connected successively; Described silicon thermal detector 2031 is better has cranky shape as shown in Fig. 2, Fig. 7 to have the heating surface area of larger covering silicon heater 1031; Described silicon frame bearing 101 comprises silicon substrate 11 and buried regions silica 12; Described bonding support end 301, stiff end 202 are all located on the buried regions silica 12 of silicon frame bearing 101, and described bonding support end 301, stiff end 202 include and support silicon layer 21, be located at the silicon oxide layer 23 that supports outside silicon layer 21, be located at the metal level 22 on silicon oxide layer 23; The support silicon layer 21 of stiff end 202 is provided with doped silicon layer 24, and metal level 22 is by the window of silicon oxide layer 23 and the doped silicon layer 24 of the stiff end 102 formation Ohmic contact that contacts; Silicon temperature measuring unit 203 comprises support silicon layer 21, is located at the silicon oxide layer 23 supporting on silicon layer 21, and silicon temperature measuring unit 203 is fixed on the buried regions silica 12 on silicon frame bearing 101 by stiff end 202;
2 stiff ends 202 of monolithic Temperature Detector 2 are with corresponding on distance, position with 2 bonding-stiff ends 1021 of monolithic gas microreactor 1 respectively, the bonding support end 301 that the bonding support end 301 of monolithic Temperature Detector 2 is corresponding with monolithic gas microreactor 1 is corresponding in position, and monolithic gas microreactor 1 is closely connected by metal salient point 400 with monolithic Temperature Detector 2, the silicon temperature measuring unit 203 of monolithic Temperature Detector 2 is positioned at directly over the heating element heater that has catalyst carrier 105 103 of monolithic gas microreactor 1, an electrode leads to client 104 that is positioned at outside of monolithic gas microreactor 1, bonding-stiff end 1021 and on metal salient point 400, a stiff end 202 of monolithic Temperature Detector 2, silicon temperature measuring unit 203, another stiff end 202 of monolithic Temperature Detector 2, another bonding-stiff end 1021 of monolithic gas microreactor 1 and on metal boss 400 form two end thermometric device paths with another electrode leads to client 104 that is positioned at outside of monolithic gas microreactor 1, the size that the size of monolithic Temperature Detector 2 is less than monolithic gas microreactor 1 makes the electricity of the electrode leads to client 104 of monolithic gas microreactor 1 draw pad Pad region by 2 coverings of monolithic Temperature Detector, and can carry out Bonding,
Described monolithic gas microreactor 1 all adopts soi wafer processing with monolithic Temperature Detector 2; Monolithic gas microreactor 1 adopts the mode of encapsulation to form the overall structure of micro-firedamp sensor of laminated construction with monolithic Temperature Detector 2.The heating element heater 103 independent heating catalyst carriers 105 of monolithic gas microreactor 1 wherein, the temperature rise that the silicon temperature measuring unit 203 independent detection Yin Wasi catalytic combustions of monolithic Temperature Detector 2 cause, is not subject to voltage that heating element heater 103 applies or the impact of electric current when it is measured; Described monolithic Temperature Detector 2 can also be for measures ambient temperature.
Claims (1)
1. a micro-firedamp sensor for laminated construction, is characterized in that: it comprises monolithic gas microreactor (1) and monolithic Temperature Detector (2);
Described monolithic gas microreactor (1) comprising: silicon frame bearing (101), heating element heater (103), 2 stiff ends (102), 2 bonding-stiff ends (1021), a plurality of electrode leads to client (104), a plurality of bonding support end (301), metal salient point (400) and catalyst carrier (105); Described silicon frame bearing (101) comprises silicon substrate (11) and buried regions silica (12); Described stiff end (102), bonding-stiff end (1021), bonding support end (301) are independently located on the buried regions silica (12) of silicon frame bearing (101) mutually; Stiff end (102) comprises support silicon layer (21), is located at the outer silicon oxide layer (23) of support silicon layer (21), is located at the metal level (22) on silicon oxide layer (23), in the support silicon layer (21) of described stiff end (102), be provided with doped silicon layer (24), the window of metal level (22) by silicon oxide layer (23) the formation Ohmic contact that contacts with doped silicon layer (24); Bonding-stiff end (1021), electrode leads to client (104) include with bonding support end (301) and support silicon layer (21), are located at the outer silicon oxide layer (23) of support silicon layer (21), are located at the metal level (22) on silicon oxide layer (23); Heating element heater (103) comprises support silicon layer (21), is located at and supports the outer silicon oxide layer (23) of silicon layer (21); Electrode leads to client (104) is also located on the buried regions silica (12) of silicon frame bearing (101); Each bonding-stiff end (1021), stiff end (102) all one end of the electrode leads to client (104) corresponding with are connected, and especially metal level (22) is connected; Electrode leads to client (104) is provided with electricity and draws pad Pad region, and electricity is drawn the better other end that is located at electrode leads to client (104) in pad Pad region, and the electricity that connects external circuit and electrode leads to client (104) with lead-in wire is drawn pad Pad region; Described heating element heater (103) is provided with silicon heater (1031), two symmetrically arranged silicon cantilevers (1032), silicon heater (1031) is preferably annular, the better heat radiation-support silico briquette (1033) stretched in two symmetries that is provided with in the middle of annular silicon heater (1031); One end of described silicon cantilever (1032) is connected with silicon micro-heater (1031), and the other end is connected with the stiff end (102) on silicon frame bearing (101); The silicon heater (1031) of described heating element heater (103) is provided with catalyst carrier (105), the silicon heater (1031) of heating element heater (103) is embedded in catalyst carrier (105) completely, and catalyst carrier (105) is in silicon heater (1031), and especially catalyst carrier (105) is an overall structure; On the metal level (22) of bonding-stiff end (1021), bonding support end (301), be provided with metal salient point (400); Electrode leads to client (1021) and the better the same side that is all located at silicon frame bearing (101) of stiff end (102), putting in order is an electrode leads to client, stiff end, another stiff end, another electrode leads to client;
Described monolithic Temperature Detector (2) comprises silicon frame bearing (101), silicon temperature measuring unit (203), 2 stiff ends (202), some bonding support ends (301); Described silicon temperature measuring unit (203) is provided with silicon thermal detector (2031), two symmetrically arranged silicon linking arms (2033), 2 symmetrically arranged silicon support arms (2032); Described silicon thermal detector (2031), silicon linking arm (2033), silicon support arm (2033), stiff end (202) are connected successively; Described silicon frame bearing (101) comprises silicon substrate (11) and buried regions silica (12); Described bonding support end (301), stiff end (202) are all located on the buried regions silica (12) of silicon frame bearing (101), and described bonding support end (301), stiff end (202) include and support silicon layer (21), are located at the outer silicon oxide layer (23) of support silicon layer (21), are located at the metal level (22) on silicon oxide layer (23); In the support silicon layer (21) of stiff end (202), be provided with doped silicon layer (24), metal level (22) is by the window of silicon oxide layer (23) and the doped silicon layer (24) of stiff end (102) the formation Ohmic contact that contacts; Silicon temperature measuring unit (203) comprises support silicon layer (21), is located at the silicon oxide layer (23) supporting on silicon layer (21), and silicon temperature measuring unit (203) is fixed on the buried regions silica (12) on silicon frame bearing (101) by stiff end (202);
2 stiff ends (202) of monolithic Temperature Detector (2) are with corresponding on distance, position with 2 bonding-stiff ends (1021) of monolithic gas microreactor (1) respectively, the bonding support end (301) that the bonding support end (301) of monolithic Temperature Detector (2) is corresponding with monolithic gas microreactor (1) is corresponding in position, and monolithic gas microreactor (1) is closely connected by metal salient point (400) with monolithic Temperature Detector (2), the silicon temperature measuring unit (203) of monolithic Temperature Detector (2) is positioned at directly over the heating element heater that has catalyst carrier (105) (103) of monolithic gas microreactor (1), an electrode leads to client (104) that is positioned at outside of monolithic gas microreactor (1), a bonding-stiff end (1021) and on metal salient point (400), a stiff end (202) of monolithic Temperature Detector (2), silicon temperature measuring unit (203), another stiff end (202) of monolithic Temperature Detector (2), another bonding-stiff end (1021) of monolithic gas microreactor (1) and on another electrode leads to client (104) that is positioned at outside of metal boss (400) and monolithic gas microreactor (1) form two end thermometric device paths, the size that the size of monolithic Temperature Detector (2) is less than monolithic gas microreactor (1) makes the electricity of the electrode leads to client (104) of monolithic gas microreactor (1) draw pad Pad region by monolithic Temperature Detector (2) covering, and can carry out Bonding.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320600030.7U CN203513269U (en) | 2013-09-26 | 2013-09-26 | Micro gas sensor of overlapped structure |
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| CN201320600030.7U CN203513269U (en) | 2013-09-26 | 2013-09-26 | Micro gas sensor of overlapped structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482562A (en) * | 2013-09-26 | 2014-01-01 | 中国矿业大学 | Tiny gas sensor of laminated structure and preparation method of micro-gas sensor |
| WO2016066090A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Flip-chip packaging-based methane sensor, manufacturing method for same, and applications thereof |
| CN106257250A (en) * | 2015-06-16 | 2016-12-28 | 波音公司 | Sensing system for laminar structure |
-
2013
- 2013-09-26 CN CN201320600030.7U patent/CN203513269U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482562A (en) * | 2013-09-26 | 2014-01-01 | 中国矿业大学 | Tiny gas sensor of laminated structure and preparation method of micro-gas sensor |
| CN103482562B (en) * | 2013-09-26 | 2015-06-24 | 中国矿业大学 | Tiny gas sensor of laminated structure and preparation method of micro-gas sensor |
| WO2016066090A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Flip-chip packaging-based methane sensor, manufacturing method for same, and applications thereof |
| CN106257250A (en) * | 2015-06-16 | 2016-12-28 | 波音公司 | Sensing system for laminar structure |
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