CN205879412U - Novel graphite alkene high -temperature pressure sensor of no cavity - Google Patents

Abstract

The utility model relates to a high -temperature pressure tests the graphite alkene sensor of nai high -temperature pressure of technical field, a concretely relates to novel no cavity. The high -temperature pressure sensor is no chamber arrangement, the high -temperature pressure sensor is including boron nitride / graphite alkene / the boron nitride heterojunction that is used for experiencing the external pressure, the outside of boron nitride / graphite alkene / boron nitride heterojunction does not set up chamber arrangement, boron nitride / graphite alkene / boron nitride heterojunction is three layer construction, and from the top down is top layer boron nitride, graphite alkene layer and bottom boron nitride in proper order. The high -temperature pressure sensor utilizes boron nitride / graphite alkene / boron nitride heterojunction to experience outside pressure signal as sensing element, and device sensitivity does not rely on the pressure chamber, so can not produce the temperature drift that extra noise pressure arouses, noise pressure reduces 300%, can improve the sensitivity of device under high temperature environment by a wide margin.

Description

A kind of novel Graphene high-temp pressure sensor without chamber

Technical field

This utility model relates to high temperature pressure technical field of measurement and test, is specifically related to a kind of novel resistance to height of the Graphene without chamber Temperature and pressure force transducer.

Background technology

High-temp pressure sensor be mainly used in the heat-resisting cavitys such as high-speed aircraft, jet engine, rocket, guided missile and The measurement of surface pressure everywhere.Traditional pressure transducer is mainly silicon diffused piezoresistive pressure sensor, its technical maturity And excellent performance, but device uses P-N junction to tie as sensitivity, is limited by P-N junction heatproof, when operating temperature is higher than 125 DEG C, and silicon There is intrinsic diffusion so that device performance degradation, during more than 600 DEG C, plastic deformation and current leakage can occur, press simultaneously The expansion in high temperature environments of gas in force transducer chamber can bring noise pressure, and it is sensitive that this seriously constrains device The lifting of degree.Above-mentioned factor makes conventional pressure sensor cannot meet completely in above-mentioned application hot environment downforce The requirement measured.

Along with new principle, the continually developing of new material, all kinds of new type high temperature pressure transducers continue to bring out, and this kind of device leads to The sensitive knot crossing improvement pressure transducer greatly improves operating temperature, but there is also weak point.Current high temperature pressure passes Sensor can be divided into according to the difference of principle and material: High Temperature Polysilicon Pressure Sensor, SOI high-temp pressure sensor, Lan Bao Stone-silicon (SOS) high-temp pressure sensor, SiC high-temp pressure sensor, optical fibre high temp pressure transducer etc..Polysilicon high-temperature high-pressure Force transducer and SOI high-temp pressure sensor technical maturity, can be greatly improved operating temperature, but additional stress, inherent strain etc. Gas expansion in intrinsic factor and hot environment lower pressure sensor chamber can have a strong impact on the sensitivity of device.Lan Bao Stone-silicon (SOS) high-temp pressure sensor can tolerate the high temperature of 350 DEG C and has the sensitivity of excellence, but sapphire-silicon substrate system Standby complex process, expensive.SiC high-temp pressure sensor is the highest can tolerate 600 DEG C of high temperature, has the high-temperature behavior of excellence, But encapsulation is required high by it, general encapsulation technology is extremely difficult to the sealing temperature that it is required.Optical fibre high temp pressure transducer Having the advantages such as highly sensitive, elevated operating temperature, but it needs the equipment supports such as light source, light detecting device, prism, application conditions is multiple Miscellaneous.

For current high-temp pressure sensor, the existence of pressure chamber is the important guarantor of device sensitivity external pressure change Barrier, but the gas of a certain lock chamber indoor can expand because of the rising of temperature thus produce noise pressure, and noise pressure Can become big along with the rising of temperature, specific formula for calculation is:

$\frac{P1\×V1}{T1}=\frac{P2\×V2}{T2}---\left(1\right)$

In formula, the left side represents the gaseous state of room temperature downforce intracavity, P₁For the gas pressure of room temperature downforce intracavity, V₁ For the volume of room temperature downforce intracavity gas, T₁For room temperature temperature, in units of Kelvin, it is expressed as 293.15K；The right represents Gaseous state in pressure chamber, P when 900 DEG C₂It is the gas pressure of 900 DEG C of downforce intracavity, V₂It is 900 DEG C of downforce intracavity gas The volume of body, T₂Numerical value be 1173.15K.Assume that volume approximation when room temperature rises to 900 DEG C of pressure intracavity gas keeps not Become, then have V₁=V₂, formula (1) is deformed into:

$\frac{P2}{P1}=\frac{T2}{T1}---\left(2\right)$

In being understood pressure chamber by formula (2), gas pressure is only relevant with temperature, has again T₂/T₁=4.002, then under the conditions of 900 DEG C Gas pressure in pressure chamber is about 4 times of room temperature downforce intracavity gas pressure, and this means that the noise creating 300% Pressure, this will be substantially reduced the sensitivity of high temperature lower pressure sensor partially due to temperature raises produced noise pressure.

Utility model content

For existing high-temp pressure sensor air-liquid body heat in hot environment medium sensitivity is by sensing element and pressure chamber Expanded noise pressure limit is difficult to the problem promoted.This utility model provides a kind of novel Graphene high temperature pressure without chamber to pass Sensor, high-temp pressure sensor described in the utility model utilizes boron nitride/Graphene/boron nitride hetero-junctions as sensing element sense By external pressure signal, device sensitivity does not relies on pressure chamber, so the temperature that extra noise pressure causes will not be produced Drift, noise pressure reduces 300%, device sensitivity in high temperature environments can be greatly improved.

This utility model is achieved through the following technical solutions:

A kind of novel Graphene high-temp pressure sensor without chamber, described high-temp pressure sensor is without chamber structure； Described high-temp pressure sensor includes the boron nitride/Graphene/boron nitride hetero-junctions for experiencing external pressure, described nitridation The outside of boron/Graphene/boron nitride hetero-junctions is not provided with chamber structure；It is described that boron nitride/Graphene/boron nitride is heterogeneous becomes three Rotating fields, is followed successively by top layer boron nitride, graphene layer and bottom boron nitride from top to bottom；

Described high-temp pressure sensor also includes substrate, adiabatic boss, screw thread bayonet socket and bottom fixed pedestal；Described nitrogen Changing boron/Graphene/boron nitride hetero-junctions and be arranged on the center on substrate top, described substrate is arranged on described adiabatic boss Center, described adiabatic boss is arranged at bottom fixed pedestal top, and the periphery at bottom fixed pedestal arranges at least one Screw thread bayonet socket, is fixed on appointment position by screw thread bayonet socket by bottom fixed pedestal.

Further, the thickness of described top layer boron nitride and bottom boron nitride is 20nm-30nm；Described graphene layer by Monolayer carbon atomic building, has hexagonal lattice structure, and thickness is 0.035nm.

Further, described high-temp pressure sensor also includes two electrodes, goes between, runs through adiabatic boss and bottom is fixed The through hole of pedestal, the detection module being positioned at bottom fixed pedestal bottom and signal display module；Wherein, two electrodes are arranged at Substrate top, and it is separately positioned on the both sides of described boron nitride/Graphene/boron nitride hetero-junctions, two electrodes are all by lead-in wire Being connected with detection module, signal detection module is connected with signal display module, wherein, go between through after through hole with detection module Connect.

Further, described signal detection module is arranged at the side being not provided with adiabatic boss of bottom fixed pedestal；And Described signal detection module is arranged on the position corresponding with adiabatic boss.

Further, described boron nitride/Graphene/boron nitride hetero-junctions is experienced external pressure and is produced electrical response signal, Described electrical response signal is transferred to detection module via electrode, lead-in wire successively, and described electrical response is believed by described detection module Number be amplified, denoising and rectification process and obtain pressure signal, and show pressure signal via signal display module.

Further, described high-temp pressure sensor can either realize contact pressure measxurement, is capable of again noncontact Formula pressure measxurement.

Further, the substrate in described high-temp pressure sensor, hetero-junctions, electrode, lead-in wire, adiabatic boss all use resistance to Prepared by high-temperature material, wherein, substrate uses No. 4 material high temp glass to make, and can bear 1200 DEG C of high temperature；Utilize electrode prepared by platinum It is up to 1768 DEG C with lead-in wire heatproof；Adiabatic boss uses the adiabatic watt HRSI in aviation special heat-barrier material high temperature surface, can isolate The high temperature of 1260 DEG C.

Further, described bottom fixed pedestal is rounded, and area is 9 π square centimeters；Described adiabatic boss is square Area is 4 square centimeters.

Advantageous Effects of the present utility model:

High-temp pressure sensor described in this utility model, arranges boron nitride/Graphene/boron nitride hetero-junctions on substrate As sensing element, when ambient pressure acts on the surface of boron nitride/Graphene/boron nitride hetero-junctions, it can be made internal former Sub-spacing changes, thus affects Graphene hexagonal lattice structure, makes Graphene energy band open energy gap at dirac point, thus There is huge change in the electric property making Graphene, flows through the size of current in Graphene face by detection and just can obtain outside The stress intensity applied, simultaneously the most in this course, boron nitride layer is that Graphene provides protection, it is ensured that Graphene can be 900 DEG C of hot environments work, thus reaches to measure the purpose of external pressure in hot environment.

This utility model uses the Open architecture design without chamber, eliminates similar device sensitive pressure and is relied on Pressure chamber, it is to avoid the noise pressure shadow brought to sensitive thin film after hot environment downforce intracavity air-liquid body expanded by heating Ringing, noise pressure can be reduced 300%, the structure without chamber also simplify the processing technique of device simultaneously, and this makes this practicality new It is excellent that high-temp pressure sensor in type has compared with similar device that technique is simple, highly sensitive, sensitivity temperature coefficient is little Gesture.

Accompanying drawing explanation

Fig. 1 high-temp pressure sensor overall structure schematic diagram；

Fig. 2 boron nitride/Graphene/boron nitride heterojunction structure schematic diagram；

Fig. 3 high-temp pressure sensor overall structure schematic diagram；

Fig. 4 high-temp pressure sensor structure top view；

Fig. 5 boron nitride/Graphene/boron nitride hetero-junctions sensitivity principle figure.

Reference: 1. substrate, 2. boron nitride/Graphene/boron nitride hetero-junctions, 3. electrode, 4. lead-in wire, 5. through hole, 6. Adiabatic boss, 7. screw thread bayonet socket, 8. bottom fixed pedestal, 9. signal detection module, 10. signal display module.

Detailed description of the invention

In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing and enforcement Example, is explained in further detail this utility model.Should be appreciated that specific embodiment described herein is used only for explaining This utility model, is not used to limit this utility model.

On the contrary, this utility model contain any be defined by the claims do in spirit and scope of the present utility model Replacement, amendment, equivalent method and scheme.Further, in order to make the public that this utility model to be had a better understanding, the most right During details of the present utility model describes, detailed describe some specific detail sections.Do not have for a person skilled in the art The description of these detail sections can also understand this utility model completely.

Embodiment 1

A kind of novel Graphene high-temp pressure sensor without chamber, described high-temp pressure sensor utilize by boron nitride and Boron nitride/Graphene/boron nitride hetero-junctions sensitivity external pressure signal that Graphene is constituted, this hetero-junctions can bear 900 DEG C Continuous high temperature, the most sensitive to high-frequency pressure signal, the global design of sensor is not related to pressure chamber simultaneously, this makes this reality Avoid in similar high temperature pressure device by noise pressure signal after the air-liquid body expanded by heating in pressure chamber with novel, make Device sensitivity is substantially improved.

The basic functional principle of high-temp pressure sensor described in the utility model is: when external pressure changes, should Power acts on boron nitride/Graphene/boron nitride hetero-junctions surface, causes the atomic distance between Graphene and boron nitride to become Changing, the change of atomic distance makes to produce the dipole wearing layer for a pair around Graphene and boron nitride contact surface, and this is to wearing a layer dipole The symmetry of carbon atom in Graphene is broken in the athletic meeting of son so that the energy band of Graphene open energy gap at dirac point. The generation of energy gap can affect the electrical conductivity of Graphene, causes the change of whole hetero-junctions electric property, flows through graphite by collection Current value in alkene face, is input to signal detection module and the most finally can obtain and put on boron nitride/Graphene/boron nitride hetero-junctions The size of the stress on surface.

Below in conjunction with accompanying drawing, this utility model is described further:

As shown in figures 1 and 3, boron nitride/Graphene/boron nitride hetero-junctions 2 and electrode 3 arrange on the substrate 1, two panels electricity Pole is connected with boron nitride/Graphene/boron nitride hetero-junctions 2 respectively；Substrate 1 is connected with adiabatic boss 6 bonding；Through hole 5 is positioned at The both sides of substrate 1, through hole 5 runs through adiabatic boss 6 and bottom fixed pedestal 8；Lead-in wire 4 is through through hole 5, and the 4 connection letters that go between Number detection module 9 and electrode 3, adiabatic boss 6 is bonded with bottom fixed pedestal 8 and is connected；Bottom fixed pedestal 8 is by screw thread bayonet socket 7 are connected with target detection environment or measured target, and signal detection module 9 is connected with bottom fixed pedestal 8 signal detection Module 9 is connected with signal display module 10, and wherein, described signal detection module 9 is arranged at being not provided with of bottom fixed pedestal 8 The side of adiabatic boss 6；And described signal detection module 9 is arranged on the position corresponding with adiabatic boss 6, adiabatic boss is used for The high temperature impact of protection signal detection module not tested person environment.

As in figure 2 it is shown, boron nitride/Graphene/boron nitride hetero-junctions is by upper and lower two-layer boron nitride and the Graphene of centre Layer is constituted, and upper and lower boron nitride layer, i.e. the thickness of top layer boron nitride and bottom boron nitride is for being 20-30nm；Middle Graphene Layer is arranged to make up by hexagonal lattice structure by one layer of carbon atom, and graphene layer thickness is 0.035nm, top layer boron nitride and stone Ink alkene layer covers on electrode, graphene layer and electrode contact, thus ensures that electrode is by heterogeneous for boron nitride/Graphene/boron nitride The electrical response signal of knot is delivered to signal detection module.

As shown in Figure 4, boron nitride/Graphene/boron nitride hetero-junctions 2 and electrode 3 are arranged at substrate 1 (10mm × 10mm) Central area,.The effective coverage of the sensitive external pressure signal of boron nitride/Graphene/boron nitride hetero-junctions 2 is 5mm × 5mm, has The width in effect region is also the distance between two electrodes 3, and substrate 1 is arranged in the region of adiabatic boss 6 (20mm × 20mm).

As it is shown in figure 5, this figure is boron nitride/Graphene/boron nitride hetero-junctions sensitivity principle figure, by lead-in wire, electrode, nitridation Boron/Graphene/boron nitride hetero-junctions composition current loop, signal detection module provides blanking voltage V for described current loop, this Time to flow through the electric current in boron nitride/Graphene/boron nitride heterojunction interface be I, when pyrostat is by external pressure effect, The atomic distance of boron nitride/Graphene/boron nitride hetero-junctions changes under the effect of external pressure, thus causes nitridation The electrical conductivity of boron/Graphene/boron nitride hetero-junctions changes, and the change of electrical conductivity can make the electric current in current loop produce three The change of the individual order of magnitude；By the change of electric current in detection loop, eventually pass through signal deteching circuit and can obtain outside The size of pressure.

When boron nitride/Graphene/boron nitride hetero-junctions is by external pressure signal function, flow through the electricity in Graphene face Stream size and pressure applied have a following relation:

I(Vb)∝exp[eVb–Eg(P)]

Wherein, I (Vb) is the loop current of current measurement；Vb is the bias that grid bias power supply provides；E is elementary charge；P is Pressure；The energy gap of the Graphene that Eg is clipped by boron nitride, Eg is the function of P.

When external pressure is at 0-5nN/nm²Between change time, along with pressure increase by the electric current in Graphene face by 10^-6A is decreased to 10^-9A, changes 3 orders of magnitude.This shows that boron nitride/Graphene/boron nitride hetero-junctions is in the face of external pressure There is during effect high sensitivity, it was demonstrated that boron nitride/Graphene/boron nitride hetero-junctions is applied to height by this utility model The feasibility of temperature and pressure force transducer, embodies huge as compared with sensitive structure high temperature pressure device similar with other of hetero-junctions Advantage.

In the description of this specification, reference term " embodiment ", " some embodiments ", " illustrative examples ", The description of " example ", " concrete example " or " some examples " etc. means to combine this embodiment or the specific features of example description, knot Structure, material or feature are contained at least one embodiment of the present utility model or example.In this manual, to above-mentioned art The schematic representation of language is not necessarily referring to identical embodiment and example.And, the specific features of description, structure, material or Person's feature can combine in any one or more embodiments or example in an appropriate manner.

Embodiment the most of the present utility model, it will be understood by those skilled in the art that In the case of without departing from principle of the present utility model and objective, embodiment can be carried out multiple change, revise, replace and become Type, scope of the present utility model is limited by claim and equivalent thereof.

Claims (8)

1. a novel Graphene high-temp pressure sensor without chamber, it is characterised in that described high-temp pressure sensor is nothing Chamber structure；Described high-temp pressure sensor includes the boron nitride/Graphene/boron nitride hetero-junctions for experiencing external pressure (2), the outside of described boron nitride/Graphene/boron nitride hetero-junctions (2) is not provided with chamber structure；Described boron nitride/Graphene/ Boron nitride hetero-junctions (2) is three-decker, is followed successively by top layer boron nitride, graphene layer and bottom boron nitride from top to bottom；

Described high-temp pressure sensor also includes substrate (1), adiabatic boss (6), screw thread bayonet socket (7) and bottom fixed pedestal (8)；Described boron nitride/Graphene/boron nitride hetero-junctions (2) is arranged on the center on substrate (1) top, described substrate (1) Being arranged on the center of described adiabatic boss (6), described adiabatic boss (6) is arranged at bottom fixed pedestal (8) top, the end of at The periphery of layer fixed pedestal (8) arranges at least one screw thread bayonet socket (7), by screw thread bayonet socket (7), bottom fixed pedestal (8) is solid Due to specifying position.

A kind of novel Graphene high-temp pressure sensor without chamber the most according to claim 1, it is characterised in that described The thickness of top layer boron nitride and bottom boron nitride is 20nm-30nm；Described graphene layer, by monolayer carbon atomic building, has six Angle lattice structure, thickness is 0.035nm.

A kind of novel Graphene high-temp pressure sensor without chamber the most according to claim 1, it is characterised in that described High-temp pressure sensor also includes two electrodes (3), lead-in wire (4), runs through leading to of adiabatic boss (6) and bottom fixed pedestal (8) Hole (5), the detection module (9) being positioned at bottom fixed pedestal (8) bottom and signal display module (10)；Wherein, two electrodes (3) it is arranged at substrate (1) top, and is separately positioned on the both sides of described boron nitride/Graphene/boron nitride hetero-junctions (2), two Electrode (3) is all connected with detection module (9) by lead-in wire (4), and signal detection module (9) is connected with signal display module (10) Connecing, wherein, lead-in wire (4) is connected with detection module (9) afterwards through through hole (5).

A kind of novel Graphene high-temp pressure sensor without chamber the most according to claim 3, it is characterised in that described Signal detection module (9) is arranged at the side being not provided with adiabatic boss (6) of bottom fixed pedestal (8)；And described signal detection Module (9) is arranged on the position corresponding with adiabatic boss (6).

A kind of novel Graphene high-temp pressure sensor without chamber the most according to claim 3, it is characterised in that described Boron nitride/Graphene/boron nitride hetero-junctions (2) is experienced external pressure and is produced electrical response signal, and described electrical response signal depends on Secondary via electrode (3), lead-in wire (4) be transferred to detection module (9), described electrical response signal is carried out by described detection module (9) Amplification, denoising and rectification process and obtain pressure signal, and show pressure signal via signal display module (10).

A kind of novel Graphene high-temp pressure sensor without chamber the most according to claim 1, it is characterised in that described High-temp pressure sensor can either realize contact pressure measxurement, is capable of again contactless pressure measxurement.

7., according to a kind of novel Graphene high-temp pressure sensor without chamber one of claim 1-6 Suo Shu, its feature exists In, the substrate (1) in described high-temp pressure sensor, hetero-junctions (2), electrode (3), lead-in wire (4), adiabatic boss (6) all use Prepared by exotic material.

A kind of novel Graphene high-temp pressure sensor without chamber the most according to claim 1, it is characterised in that described Bottom fixed pedestal (8) is rounded, and area is 9 π square centimeters；Described adiabatic boss be area be 4 square centimeters.