CN102494837B - Vacuum sensor - Google Patents
Vacuum sensor Download PDFInfo
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- CN102494837B CN102494837B CN 201110391809 CN201110391809A CN102494837B CN 102494837 B CN102494837 B CN 102494837B CN 201110391809 CN201110391809 CN 201110391809 CN 201110391809 A CN201110391809 A CN 201110391809A CN 102494837 B CN102494837 B CN 102494837B
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Abstract
The invention discloses a vacuum sensor, which comprises a substrate of which the surface is insulated, and a positive pole microelectrode and a negative pole microelectrode which are arranged on the substrate, wherein the positive pole microelectrode and the negative pole microelectrode are connected with respective electrode leads; and a one-dimensional nano material is covered on a negative pole. The one-dimensional nano material has excellent field emission performance, large current can be generated under low direct current voltage, and the vacuum sensor is safe and is convenient to measure.
Description
Technical field
The invention belongs to the vacuum transducer field, relate in particular to a kind of micro vacuum sensor.
Background technology
Along with the widespread use of vacuum microelectronic device, increasing microelectronic component and micro mechanical system need to be worked under vacuum environment, and also more and more higher to the requirement of vacuum tightness.And can there be certain residual pressure in existing vacuum sealing technique, and the long problem that also has seal failure of time one, yet the inner vacuum tightness of encapsulation can't be measured again, therefore can't guarantee whether these microelectronics and micro mechanical system work in the working environment of its design.If the micro vacuum sensor can be integrated into these microelectronic components and in the mechanical system, can monitor at any time so the vacuum tightness of the working environment of these devices, thereby can learn that these vacuum microelectronic devices and MEMS (micro electro mechanical system) whether in its best duty, guarantee its reliability.Therefore the micro vacuum sensor has a wide range of applications in fields such as microelectronic vacuum and micro mechanical systems.
(the H.Hemni such as H.Hemni in 1993, S.Shoji, K.Yosimi, and M.Esashi.Vacuum package for microresonators by glass-silicon anodic bonding, 7th International Conference on Solid-State Sensor and Actutors, Transducers ' 93, Japan, 1993:584-587) developed the miniature thin-film vacuum transducer, its principle of work be sensitive thin film with one with it parallel electrode form parallel capacitance, when extraneous vacuum tightness changes, deformation will be responded to and occur to sensitive thin film, thereby so that the capacitance size of capacity plate antenna changes, can calculate the size of vacuum tightness by the variation of this electric capacity, but at that time because technical limitation, measurement range is very limited and need just can measure under the AC mode, so measurement of vacuum is not too convenient.
(the Wang Yuelin such as M.Esashi of the Wang Yuelin of Zhejiang University in 1999 and Japan, M.Esashi.. Novel Force balanced microcomputer tool vacuum transducer research. vacuum science and technology, 1994,19 (4): 304-311) developed a kind of film micro vacuum sensor of force balance type, expand the measurement range of diaphragm type micro vacuum meter, and improved its sensitivity.However, but the critical component annular seal space of diaphragm type vacuum transducer is subjected to the restriction of Sealing Technology and seal failure problem, and range of application is also relatively limited.
(the Jin Xinyu such as Jin Xinyu of Zhejiang University in 1999, Zhang Yu, Zhou Qimin etc. the research of silicon micro-mechanical resonate vacuum transducer fixed ampllitude vacuum meter, instrumental technique and sensor, 1999:14-16) developed a kind of novel silicon micro-mechanical resonate vacuum transducer, its principle of work is, with the semi-girder that on single-chip, forms by anisotropic etch as harmonic oscillator, take the free-ended mass of semi-girder bottom surface as top electrode, take the silicon substrate of silicon-Si direct bonding as bottom electrode, form electrostatic actuator, and semi-girder the rear portion be manufactured with piezo-resistance device, the rear portion of semi-girder is manufactured with piezo-resistance device, convert the vibrations of semi-girder to resistance signal output, but the semi-girder difficulty of processing of this sensor is large, and easily influenced by ambient temperature.
The Sun Daoheng of Xiamen University in 2007, Wen Weiren, the vacuum transducer (publication number CN 101034029A) of Wang Lingyun invention is a kind of microsensor that utilizes the silicon tips array field emission based on MEMS (micro electro mechanical system), its principle of work is the relation of utilizing microelectronic vacuum midfield transmitter current size to change with vacuum tightness, with silicon tips array as electron emission source, metal anode is as electron collector, under the emission of high-voltage electric field, produce a transmitter current, come the size of indirect measurement of vacuum by the size of measurement field transmitter current.But its weak point is, the operating voltage of this sensor is higher, needs the supreme hectovolt of tens of volts, and an emission threshold value is difficult to judge.
Therefore, on the basis of CN 101034029A, the invention provides and a kind ofly under lower operating voltage, can produce larger electric current, not only safety but also the micro vacuum sensor being convenient to measure.
Summary of the invention
Because the defects of prior art, technical matters to be solved by this invention provides a kind of applicable to the micro vacuum sensor under the lower operating voltage.
For achieving the above object, the invention provides a kind of vacuum transducer, comprise the substrate of surface insulation and be arranged on anode and negative electrode microelectrode on this substrate, described anode and negative electrode microelectrode link to each other with separately electrode cable, and are coated with monodimension nanometer material on the negative electrode.
In better embodiment of the present invention, electrode cable links to each other with the Dc low voltage power supply of 3-10 volt.
In better embodiment of the present invention, anode and negative electrode are three-dimensional structure and have certain altitude.
In another better embodiment of the present invention, this monodimension nanometer material is a kind of in carbon nano-tube, silicon carbide nanometer line, silicon nanowires, the zinc oxide nanowire.
In another better embodiment of the present invention, anode is coated with the good metal of electric conductivity, and what this metal can be in gold, aluminium, nickel, copper, platinum, the silver is a kind of.
In another better embodiment of the present invention, this backing material is the silicon chip that glass, High Resistivity Si or top layer are coated with insulation course.
In all these embodiments, the male or female microelectrode can be microelectrode unit or microelectrode array.
During work, negative electrode and anode are connected to the Dc low voltage power supply of 3-10 volt by electrode cable, under the effect of Dc low voltage power supply, between anode and negative electrode, produce a transmitter current, because under different air pressure, the degree of polarization of gas molecule is different, and then can form different field transmitter currents, therefore size and the vacuum tightness of this transmitter current have corresponding relation, can indirectly measure the size of vacuum tightness by the size of measuring this electric current, and because monodimension nanometer material has excellent field emission performance, under lower 3-10 volt DC voltage, can produce larger electric current, and need not the supreme hectovolt high-voltage electric field of tens of volt of the prior art, not only safe but also be convenient to measure.
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation, to understand fully purpose of the present invention, feature and effect.
Description of drawings
Fig. 1 is the schematic diagram of the specific embodiment according to the present invention.
Embodiment
As shown in Figure 1, substrate 1 is made by the material of surface insulation among the figure, is coated with the silicon chip of insulation course etc. such as glass, silicon dioxide, silicon nitride, High Resistivity Si or top layer; Anode 2 has the microelectrode of the good metal material of electric conductivity for surface coverage, described metal material can be gold, aluminium, nickel, copper, platinum or silver; Then be coated with the nano material 5 of one dimension on the surface of negative electrode 3, such as carbon nano-tube, silicon carbide nanometer line, silicon nanowires, zinc oxide nanowire; Anode 2 and negative electrode 3 are three-dimensional structure, have certain height (5 microns to 1 millimeter), have jointly formed microelectrode unit 4; 6 for anode 2 and negative electrode 3 being connected to the contact conductor of the Dc low voltage power supply 7 that the 3-10 volt can be provided, and adopts the micro fabrication aforesaid operations.
Embodiment 1:
The structure and composition of the present embodiment as shown in Figure 1, wherein substrate 1 is glass substrate; Anode 2 is golden microelectrode.Be coated with Single Walled Carbon Nanotube on the negative electrode 3, the voltage that negative electrode 3 and anode are 2 is 3 volts.
Embodiment 2:
The structure and composition of the present embodiment as shown in Figure 1, wherein substrate 1 is High Resistivity Si; Anode 2 is silver-colored microelectrode.Be coated with zinc oxide nanowire on the negative electrode 3, the voltage that negative electrode 3 and anode are 2 is 10 volts.
In a further embodiment, above-mentioned embodiment also can adopt the form of the microelectrode array that is comprised of described microelectrode.
It is pointed out that the measurement that namely can be used for the internal vacuum of the small vacuum plant of volume according to vacuum transducer of the present invention, also can be used for the vacuum measurement of larger vacuum chamber.
More than describe preferred embodiment of the present invention in detail.The ordinary skill that should be appreciated that this area need not creative work and just can design according to the present invention make many modifications and variations.Therefore, all in the art technician all should be in the determined protection domain by claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (6)
1. vacuum transducer comprises the substrate of surface insulation and is vertically set on anode and negative electrode microelectrode on the described substrate, and described anode and negative electrode microelectrode link to each other with separately electrode cable, it is characterized in that,
Be coated with monodimension nanometer material on the described negative electrode;
Voltage between described anode and the negative electrode microelectrode is the 3-10 volt;
Described anode and described negative electrode are three-dimensional structure, and have 5 microns to 1 millimeter height.
2. vacuum transducer as claimed in claim 1 is characterized in that, wherein said monodimension nanometer material is a kind of in carbon nano-tube, silicon carbide nanometer line, silicon nanowires, the zinc oxide nanowire.
3. vacuum transducer as claimed in claim 1 is characterized in that, wherein said anode is coated with the good metal of electric conductivity.
4. vacuum transducer as claimed in claim 3 is characterized in that, wherein said metal is a kind of in gold, aluminium, nickel, copper, platinum, the silver.
5. vacuum transducer as claimed in claim 1 is characterized in that, wherein said backing material is the silicon chip that glass, silicon dioxide, silicon nitride, High Resistivity Si or top layer are coated with insulation course.
6. the vacuum transducer described in the preceding arbitrary claim is characterized in that, wherein said anode microelectrode or negative electrode microelectrode are microelectrode unit or microelectrode array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201110391809 CN102494837B (en) | 2011-12-01 | 2011-12-01 | Vacuum sensor |
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| CN 201110391809 CN102494837B (en) | 2011-12-01 | 2011-12-01 | Vacuum sensor |
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| CN102494837A CN102494837A (en) | 2012-06-13 |
| CN102494837B true CN102494837B (en) | 2013-10-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103207046A (en) * | 2013-03-29 | 2013-07-17 | 上海理工大学 | Vacuum pressure sensor |
| CN110231120A (en) * | 2019-05-24 | 2019-09-13 | 南开大学 | A kind of apparatus and method of measurement of vacuum |
| CN112903183B (en) * | 2019-11-19 | 2022-11-22 | 北京大学 | On-chip miniature ionization vacuum sensor and manufacturing method thereof |
| CN112097991B (en) * | 2020-09-11 | 2021-06-08 | 无锡物联网创新中心有限公司 | Pirani vacuum gauge system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102005010716A1 (en) * | 2005-03-09 | 2006-09-14 | Inficon Gmbh | Cold cathode pressure sensor |
| JP4735052B2 (en) * | 2005-05-27 | 2011-07-27 | パナソニック電工株式会社 | Pressure measuring device |
| CN101303264B (en) * | 2007-05-09 | 2010-05-26 | 清华大学 | Ionization gage |
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