A kind of high stable telescopic mould quartz temperature sensor using noncontacting electrode
Technical field
The present invention relates to sensor field, specifically a kind of high stable telescopic mould quartz temperature using noncontacting electrode
Spend sensor.
Background technique
Resonance type quartz crystal temperature sensor is a kind of novel digital sensor, it is with high accuracy, high stable, superelevation point
The good characteristics such as resolution and it is well-known.Its working mechanism is " resonance ", is not to generate by molecular thermalmotion " resistance ", therefore it is super
Low-temperature characteristics is also quite good.This as Russia scholar horse love point out " sensitivity of Quartz Temperature Sensor is much higher than absolutely
Most of existing temperature sensors, including platinum resistance temperature sensor.Widely applied platinum sensor, it is non-linear
It is larger, up to 0.55 DEG C, and the non-linear of Quartz Temperature Sensor is no more than 0.07 DEG C ".It is wherein quite representational
It is resonance type quartz crystal crystal fork temperature sensor, resonance type quartz crystal temperature sensor major advantage is as follows:
1. output signal is frequency, it is not necessary to computer can be directly inputted using A/D transformation;
2. accuracy may be up to 0.05 DEG C (absolute error in temperature-measuring range), 10 times higher than general platinum resistance thermometer with
On;
3. repeated high, long-time stability are good, up to 0.01 DEG C ~ 0.001 DEG C, higher by 10 than general industrial platinum resistance thermometer
~ 100 times or more.
4. being difficult to the temperature drift overcome without traditional sensors (such as platinum resistance), (accuracy caused by variation of ambient temperature is floated
Move), when drift and analog circuit bring temperature drift (such as platinum resistance thermometer A/D converter and the generations such as amplifier temperature
Drift).Experiment shows that thermometric accuracy only changes 0.005 DEG C of left side when peripheral circuit working environment is in+5 DEG C ~+35 DEG C variations
It is right.
5. the characteristic of thermometric instrument is less by the drift of amplifier and supply voltage because its output signal is frequency
The influence of stability.
The disadvantage is that operating temperature range is narrow, especially high temperature range is not met by more areas requirement, usually
Maximum operating temperature is 250 DEG C.In order to realize environmental protection, intend replacing first-class mark with resonance type quartz crystal temperature sensor at present in the world
Quasi- glass-stem thermometer realizes mercuryless temperature measurement.However, realizing that the greatest difficulty of the task is exactly to widen hot operation temperature
Range promotes accuracy, further improves the repeatability and long-time stability of product sensor.In other words, present project is
Hot operation temperature range is widened, the heat lag of resonance type quartz crystal temperature sensor is reduced, promotes repeatability and long-time stability.
It is difficult bigger for the high stable resonance type quartz crystal temperature sensor of wide operating temperature range, the reason is as follows that:
1, quartz crystal is a kind of anisotropic piezo-electric crystal, and the linear expansion coefficient of various cut type quartz crystals is all smaller,
It all can not achieve at present and be suitable for the metal material as electrode, such as: gold, silver, copper, aluminium etc. realize the complete of thermal expansion coefficient
Full matching.Therefore it when resonance type quartz crystal temperature sensor is placed in high temperature measurement, is placed in low temperature environment suddenly and carries out temperature
Detection then will generate thermal stress near metal electrode and piezoelectric quartz crystal intersection, so that quartz temperature sensor
Resonance frequency change, also result in sensor and heat lag phenomenon occur.According to piezoelectric resonator theory it is found that heat lag
Accuracy is not only reduced, and limits the raising of consistency and repeatability.The elimination of the thermal stress needs at special heat
Reason technology, but as product, allow user continually to carry out complicated heat treatment to sensor, it is clear that be unpractical.
2, electric field energy can be converted to stone using piezoelectric effect by the metal electrode that quartz resonance cell surface is arranged in
English is raised one's arm intracorporal mechanical strain energy;And the purpose for designing various quartz resonance units is to be able to motivate different sensings
Device mode of resonance.Sensor depends primarily on the structure of electrode, the object of quartz resonance unit with the excitation of different modes of resonance
Manage the mechanical property and piezoelectric property of physique structure, quartz crystal cut type.In other words, the material of metal electrode, film thickness and its
Processing quality will cause quartz resonance unit, such as the variation for the mass loading and motional impedance Z0, static resistance R0 raised one's arm, because
This, the moisture absorption of electrode, oxidation, burn into aging can cause the change of its Z0 and R0.Aluminium, silver, gold/chromium thin film electrode are all easy
The moisture absorption causes Z0 and R0 to become larger easily by certain active gases, such as the oxidation of active oxygen, chlorine, fluorine gas or corrosion.Experiment shows to set
In chlorine, the quartz tuning-fork of fluorine atmosphere, as long as the time in or so 1 week, Z0 and R0 can increase 1.5~2 times.
3, in wide operating temperature range, especially when temperature is higher, have a common boundary in metal electrode and piezoelectric quartz crystal
The phase counterdiffusion of the neighbouring two kinds of materials in surface layer, will lead to quartz crystal surface layer and metal ion occurs, and surface of metal electrode layer
Sio2 molecule can occur, therefore the surface layer that both sides are had a common boundary will be nearby modified, and influence the length of resonance type quartz crystal temperature sensor
Phase stability.
4, particularly certain good stabilities at high temperature, resistance temperature are mostly used in high temperature resonance type quartz crystal temperature sensor
The excellent high temperature metallic material of coefficient, which is spent, as metallic film motivates electrode.At this point, not only to consider it in the steady of hot conditions
Qualitative and temperature-coefficient of electrical resistance constancy, it is necessary to test the stability of its mechanical strength.Because of the variation of environment temperature,
It is poor that the sharp drastic change of rotten, delamination, cracking, semiconducting or electric conductivity will occur for high melting point metal materials.
Obviously, the metal electrode that quartz resonance cell surface is arranged in is a double-edged sword, it is in resonance type quartz crystal temperature
Sensor has undertaken extremely critical effect, but but has severely impacted its heat lag characteristic, repeatability and long-term steady
It is qualitative.
Therefore, people urgently wish it is a kind of can it is dexterously not high using a kind of working frequency of metal electrode, can be wide
Warm area work, small in size, low in energy consumption, precision is high, fast response time, reproducible, the good resonance type quartz crystal temperature of long-time stability
Sensor is spent to come out.
Summary of the invention
The purpose of the present invention is to provide a kind of high stable telescopic mould quartz temperature sensings using noncontacting electrode
Device, to solve the above problems.
To achieve the above object, the invention provides the following technical scheme:
A kind of high stable telescopic mould quartz temperature sensor using noncontacting electrode, including packaging body and be located at encapsulation
Intracorporal resonant component, resonant component are made by quartz crystal;The packaging body includes pipe cap and sealing open at one end
Be connected to pipe cap open side cuts down sheet metal, can cut down worn on sheet metal there are two be respectively used to connection external power supply it is positive and negative
Metal pins can be cut down, metal pins can be cut down with the junction that can cut down sheet metal and be sealedly connected with glass powder insulator;The resonance
Component is an integral structure comprising twin I-beam pedestal, support frame and be located at the intracorporal m carding tooth plate of support frame and n
A resonance arm, m and n are positive integer, m > n, and the quantity of metal electrode is 2n on m carding tooth plate;The twin I-beam pedestal is logical
Shock-absorbing support seat is crossed to connect with support frame;The twin I-beam pedestal and support frame are respectively arranged with bus electrode and water conservancy diversion
Electrode;On at least one face of the carding tooth plate and the face that one of face of resonance arm is opposite and carding tooth plate is opposite with resonance arm
It is provided with metal electrode, metal electrode is by bus electrode and flow guiding electrode and can cut down metal pins electric connection;The confluence
It is contactless connection between electrode, flow guiding electrode and metal electrode and resonant component.
In further embodiment: filled with the helium with the high speed capacity of heat transmission in the packaging body.
In further embodiment: the quartz crystal of the resonant component be double corner xytl (115 ° ± 0.5)/(15 ° ±
1 °) quartz crystal.
In further embodiment: there is square through hole on the shock-absorbing support seat.
In further embodiment: the bus electrode, flow guiding electrode and metal electrode are by chromium thin film, kovar alloy
Or the four-layer composite metal film that Hastelloy film, AgMo65 silver-molybdenbum film and borosilicate glass deielectric-coating are constituted.
In further embodiment: the m carding tooth plate include the first carding tooth plate, the second carding tooth plate, third carding tooth plate and
4th carding tooth plate, n resonance arm include the first resonance arm and the second resonance arm.First resonance arm and the setting of the second resonance arm
Support frame center and connected by the side inner wall of the support chips of two sides and support frame, first carding tooth plate and
Third carding tooth plate is connected to the upper inner wall of support frame and is symmetrically distributed in the two sides of the first resonance arm, second carding tooth plate and
4th carding tooth plate is connected to the lower inner wall of support frame and is symmetrically distributed in the two sides of the second resonance arm;The bus electrode includes
The first bus electrode on front side of twin I-beam pedestal and the second bus electrode on rear side of twin I-beam pedestal, water conservancy diversion electricity
Pole includes the first flow guiding electrode on front side of support frame and the second flow guiding electrode on rear side of support frame;Described in one
Metal pins can be cut down and pass through the metal electricity on the first bus electrode and the first flow guiding electrode and third carding tooth plate and the 4th carding tooth plate
Pole is electrically connected, can cut down described in another metal pins by the second bus electrode and the second flow guiding electrode and the first carding tooth plate and
Metal electrode on second carding tooth plate is electrically connected.
In further embodiment: the junction of support frame side inner wall and support chip offers rectangular recess.
In further embodiment: the lower end of second resonance arm is integrally formed with rectangular block, the width of rectangular block
1.1 times of the width of second resonance arm.
In further embodiment: the m carding tooth plate include the 4th carding tooth plate, the 5th carding tooth plate, the 6th carding tooth plate and
7th carding tooth plate, the n resonance arms include third resonance arm, the 4th resonance arm and the 5th resonance arm;The third resonance arm,
4th resonance arm and the 5th resonance arm are successively spaced the upper inner wall for being connected to support frame, the 4th carding tooth plate, the 5th comb teeth
Piece, the 6th carding tooth plate and the 7th carding tooth plate be successively spaced the lower inner wall for being connected to support frame and with third resonance arm, the 4th humorous
It raises one's arm and is laid staggeredly with the 5th resonance arm;The bus electrode include the first bus electrode on front side of the twin I-beam pedestal and
The second bus electrode on rear side of twin I-beam pedestal, flow guiding electrode include the first flow guiding electrode on front side of support frame
With the second flow guiding electrode being located on rear side of support frame;Metal pins can be cut down described in one to lead by the first bus electrode and first
Metal electrode on galvanic electricity pole and the 5th carding tooth plate and the 6th carding tooth plate is electrically connected, and can cut down metal pins described in another passes through
Metal electrode on second bus electrode and the second flow guiding electrode and the 4th carding tooth plate and the 7th carding tooth plate is electrically connected.
In further embodiment: the 6th carding tooth plate and the 7th carding tooth plate are overlapped with the two side columns of support frame;Institute
It states third resonance arm and the length and width of the 5th resonance arm is all the same, the width of the 4th resonance arm and the width of third resonance arm
Identical, the length of the 4th resonance arm is 1.02 times of the length of third resonance arm.
Compared to the prior art, beneficial effects of the present invention are as follows:
The invention discloses a kind of using noncontacting electrode, can prevent and length of raising one's arm that the resonant energy that inhibits to raise one's arm leaks more
Flexible mould quartz temperature sensor new construction is groped a kind of the non-of four-layer composite metal film using high temperature resistant, ageing-resistant and is connect
The structure of touched electrode so that maximum operating temperature can reach 300 DEG C or more, and reduces heat lag, and it is long-term steady to improve it
It is qualitative.The telescopic mould quartz temperature sensor working frequency is lower (several hundred KC~1MHZ), strong antijamming capability, long-term steady
Qualitative good, temperature resolution is high, and precision is high, fast response time;In addition, its parasitic modes of vibration is few, and to fabrication error
It is required that not harsh, therefore high yield rate, consistency is good, typical sample after 30~350 DEG C of five temperature cycles detection tests,
Its uncertainty is still in 0.05~0.06 DEG C, this illustrates that the heat lag of sensor is very small.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the embodiment of the present invention 1.
Fig. 2 is the structural schematic diagram of resonant component in the embodiment of the present invention 2.
Appended drawing reference annotation: 101- pipe cap, 102-, which can cut down sheet metal, 103-, can cut down metal pins, the insulation of 104- glass powder
Son, 201- twin I-beam pedestal, 202- support frame, 203- shock-absorbing support seat, 204- square through hole, the first carding tooth plate of 205-,
The second carding tooth plate of 206-, the first resonance arm of 207-, the second resonance arm of 208-, 209- rectangular block, 210- support chip, 211- third comb
The 4th carding tooth plate of gear piece, 212-, the first bus electrode of 301-, the first flow guiding electrode of 302-, the second bus electrode of 303-, 304-
Two flow guiding electrodes, 305- metal electrode, 401- third resonance arm, the 4th resonance arm of 402-, the 5th resonance arm of 403-, 404- the 4th
Carding tooth plate, the 5th carding tooth plate of 405-, the 6th carding tooth plate of 406-, the 7th carding tooth plate of 407-.
Specific embodiment
Following embodiment can be described in detail the present invention in conjunction with attached drawing, in attached drawing or explanation, similar or identical part
Using identical label, and in practical applications, shape, thickness or the height of each component can be expanded or shunk.Institute of the present invention
Each embodiment enumerated is only to illustrate the present invention, is not used to limit the scope of the present invention.It is made for the present invention any aobvious
And modification easy to know or change are without departure from spirit and scope of the invention.
Referring to Fig. 1, a kind of high stable telescopic mould quartz temperature sensor using noncontacting electrode, including encapsulation
Body and it is located at and encapsulates intracorporal resonant component, resonant component is made by quartz crystal;The packaging body includes that one end is opened
Mouthful pipe cap 101 and be sealedly attached to 101 open side of pipe cap cut down sheet metal 102, can cut down there are two being worn on sheet metal 102
Be respectively used to connection external power supply it is positive and negative cut down metal pins 103, can cut down metal pins 103 and can cut down the company of sheet metal 102
The place of connecing is sealedly connected with glass powder insulator 104, to guarantee the leakproofness of packaging body, in use, by that can cut down metal pins 103
Electric current is introduced into packaging body;
The resonant component is an integral structure comprising twin I-beam pedestal 201, support frame 202 and be located at support frame
M carding tooth plate and n resonance arm in body 202, m and n are positive integer, m > n, the number of metal electrode 305 on m carding tooth plate
Amount is 2n;The twin I-beam pedestal 201 is connect by shock-absorbing support seat 203 with support frame 202;The twin I-beam pedestal
201 and support frame 202 be respectively arranged with bus electrode and flow guiding electrode;At least one face of the carding tooth plate and resonance arm
It is provided with metal electrode 305 on the face that one of face is opposite and carding tooth plate is opposite with resonance arm, metal electrode 305 passes through confluence
Electrode and flow guiding electrode are electrically connected with that can cut down metal pins 103;The bus electrode, flow guiding electrode and metal electrode 305 with
(i.e. twin I-beam pedestal 201 and bus electrode, support frame 202 and flow guiding electrode, carding tooth plate and metal electricity between resonant component
Pole 305) it is contactless connection;" noncontacting electrode " means the surface of excitation and receiving electrode all with temperature-sensitive quartz resonator
A minim gap is separated, gap is 0.001mm~1.5mm.When excitation and receiving electrode and power supply are respectively connected with, then electrode
By capacity effect between the two, corresponding electrostatic field is established respectively on temperature-sensitive quartz resonator surface, due to inverse piezoelectricity
Effect effect, electrostatic field of the electrode in two respective surfaces regions of temperature-sensitive quartz resonator send out temperature-sensitive quartz resonator
Deformation is given birth to.Since external circuit supplies energy periodically, length extension vibration will be produced;It is different from conventional method, this hair
Bright " noncontacting electrode " structure and conventional " noncontacting electrode " structure are different: conventional " noncontacting electrode " substrate material and
Temperature-sensitive quartz resonance arm material is different, and the interval of the two is also extremely difficult between " small " of 0.001mm~1.5mm
Gap.
" noncontacting electrode " structure of the invention is characterized in, its noncontacting electrode substrate --- carding tooth plate and no metal
The resonance arm of electrode is integral structure, i.e., the two is integrated structure, not only identical as temperature-sensitive quartz resonator material, but also
Their crystal orientation is also identical, thermal expansion coefficient exact matching.Even if obviously within the scope of very wide temperature, due to
It is zero that interval variation caused by the thermal expansion phenomenon of carding tooth plate and resonance arm, which remains on,.Therefore the non-contact electricity within the scope of wide warm area
The spacing of pole substrate --- carding tooth plate and resonance arm remains constant, so that the precision of sensor is high, good stability is surveyed
Warm range is wide.
Although noncontacting electrode substrate of the invention --- quartz crystal carding tooth plate and the telescopic mould heat without metal electrode
The gap " small " of 0.001mm~1.5mm of quick quartz resonance arm, but its effect is quite big: and not only excitation and receiving efficiency are high,
And the gap of " small " remains relatively unchanged within the scope of wide warm area, to solve long-standing problem quartz temperature sensor
Problem --- the problem that wide warm area works, heat lag and long-time stability are conflicting.
Further, filled with the helium with the high speed capacity of heat transmission in the packaging body.
The function of helium has two in level Hermetic Package structure member 8:
1, it is filled with the pressure with an atmospheric pressure of helium in level Hermetic Package structure member 8, therefore external oxygen can be prevented
Into reducing the oxidation of material, improve long-time stability.
According to the big minispread of thermal coefficient, helium is to occupy deputy gas in current various gases;Although hydrogen is led
Hot coefficient makes number one, and is 0.163W/ (m3 DEG C), and helium thermal coefficient is 0.144W/ (m3 DEG C), but hydrogen is reduction
Property gas may with certain materials inside quartz temperature sensor occur reduction reaction, influence its long-time stability.In addition, hydrogen
Gas is inflammable, dangerous, therefore the present invention uses helium.
Further, the quartz crystal of the resonant component is double corner xytl (115 ° ± 0.5)/(15 ° ± 1 °) quartz
Crystal.
Double corner quartz cut type xytl (115 ° ± 0.5 °)/(15 ° ± 1 °) are that inventor is put forward for the first time and uses in the world
A kind of new temperature-sensitive quartz cut type that uses of suitable length extension vibration mode quartz temperature sensor, have innovative and real
The property used.Understand for the ease of international counterparts or other professional persons, according to cut symbol written form as defined in IRE standard new
The temperature-sensitive quartz wafer cut type of invention is write as follows:
Xytl (115 ° ± 0.5 °)/(15 ° ± 1 °).
International wireless electrical engineering can IRE (cut symbol as defined in Institute of Radio Engineers standard
Including one group alphabetical (X, Y, Z, t, l, b) and angle.It is put in order with the successive of any two letter in X, Y, Z, indicates quartz
The original orientation of wafer thickness and length;With letter t (thickness), l(length), b(width) indicate rotary shaft position.Work as angle
Degree is timing, indicates rotation counterclockwise;When angle is negative, indicate to rotate clockwise;Xytl (115 ° ± 0.5)/(15 ° ±
1 °) thickness in temperature-sensitive quartz cut type chip home position that represents of cut type is along X-axis (electric axis of quartz crystal) direction, and its length
Along Y-axis (mechanical axis of quartz crystal) direction, in other words, home position is that a kind of X cuts race's quartz wafer: its home position stone
The normal direction of English chip is electric axis direction, and the length direction of home position quartz wafer is mechanical axis direction;The cut type is former
Beginning position quartz wafer is first among thickness t (electric axis of quartz crystal) counterclockwise rotation (115.5 °~114.5 °) section
Any one angle, then further around the mechanical axis of length l(quartz crystal) rotate clockwise appointing among the section (14o~16o)
Angle of anticipating is cut.Obviously, temperature-sensitive quartz cut type of the invention is a kind of double corner quartz cut types;The temperature-sensitive quartz is cut
The advantages of type is that temperature sensitivity is very high, its single order temperature coefficient is up to 85*10-6/ DEG C.In addition, the parasitic vibration of the cut type
Mode is few, and requires fabrication error not harsh (for example, around the electric axis rotated counterclockwise by angle required precision of quartz crystal
Not high, error can up to ± 0.5 °;And when being rotated clockwise around the mechanical axis of quartz crystal, rotation angle accuracy require compared with
Low, error can up to ± 1 °.Therefore use double cuts type xytl (115 ° ± 0.5 °)/(15 ° ± 1 °) of the invention, Neng Gou great
The yield rate for improving to amplitude product improves the consistency of good product, reduces production cost.
Further, there is square through hole 204 on the shock-absorbing support seat 203, it can be in the lower part of support frame 202
Form " well " font stress isolation structure.
In addition to features above, the present invention is also optimized bus electrode, flow guiding electrode and metal electrode 305, tradition
Resonance type quartz crystal temperature sensor mostly uses silver electrode or chromium-gold two-layer electrode, is only capable of the work in 250 DEG C of environment below
Make, in order to which temperature-measuring range is expanded to 350 DEG C or more, in the present invention, the bus electrode, flow guiding electrode and metal electrode 305
For by chromium thin film, kovar alloy or Hastelloy film, AgMo65 silver-molybdenbum film and borosilicate glass deielectric-coating
The four-layer composite metal film of composition.
Specifically, the first layer metal film in multilayer composite metal membrane structure is chromium thin film, with a thickness of 0.1~3 μ
m.This is because chromium thermal expansion coefficient is 6.2 × 10-6/ DEG C, with xytl (115 ° ± 0.5)/(30 ° ± 5 °) quartz crystal heat
Coefficient of expansion comparison match.In addition, the affinity of chromium metal and quartz crystal is stronger, binding force is strong.Therefore, even if wider
In temperature range, the combination of chromium thin film and quartz crystal is still also than stronger.
The second layer metal film compound with chromium metallic film is kovar alloy or Hastelloy film;It is with a thickness of 1
~3 μm.Kovar alloy is a kind of iron cobalt nickel alloy, and Hastelloy is a kind of iron cobalt nickel alloy of tungstenic, their thermal expansion system
Number is 4.7~5.4 × 10-6/ DEG C, with chromium metallic film comparison match.
Third layer metallic film is AgMo65 silver-molybdenbum film, with a thickness of 1~3 μm.Its density is 0.2-10.3g/
Cm3, hardness 140-170HV10, conductivity are 18-22m/ (Ω mm2), can be with kovar alloy or Hastelloy film
Match;
Four-level membrane is borosilicate glass deielectric-coating, with a thickness of 1~5 μm.It undertakes protective effect, it is ensured that sensor
Long-time stability.Borosilicate glass deielectric-coating can be all covered on third layer metallic film, can also be placed only in stone
The surface optical axis Z ' of the quartz crystal of English crystal carding tooth plate is close near the side of multilayer composite metal membrane structure, to ensure electrode
The exposed layers of chrome in side, prevents multilayer composite metal film from leading to electrochemical corrosion (chromium from side adsorbed gas, moisture, impurity etc.
The quite easy adsorbed gas of layer and certain impurity).
Below with reference to m carding tooth plate of two embodiments and n resonance arm, the laying in support frame 202 is illustrated.
Embodiment 1
Referring to Fig. 1, in the embodiment of the present invention, the m carding tooth plate includes the first carding tooth plate 205, the second carding tooth plate 206, the
Three carding tooth plates 211 and the 4th carding tooth plate 212, n resonance arm include the first resonance arm 207 and the second resonance arm 208, i.e. this implementation
In example, the m=4, n=2.The center of support frame 202 is arranged in first resonance arm 207 and the second resonance arm 208
And it is connect by the support chip 210 of two sides with the side inner wall of support frame 202, first carding tooth plate 205 and third carding tooth plate
211 are connected to the upper inner wall of support frame 202 and are symmetrically distributed in the two sides of the first resonance arm 207, second carding tooth plate 206
The lower inner wall of support frame 202 is connected to the 4th carding tooth plate 212 and is symmetrically distributed in the two sides of the second resonance arm 208, is summarized
For, in the present embodiment, four pieces of carding tooth plates are distributed into two groups, every two pieces are one group, in each group between be inserted into respectively one piece it is humorous
It raises one's arm;
The bus electrode includes positioned at the first bus electrode 301 of 201 front side of twin I-beam pedestal and positioned at twin I-beam bottom
Second bus electrode 303 of 201 rear side of seat, flow guiding electrode include 302 He of the first flow guiding electrode positioned at 202 front side of support frame
Positioned at the second flow guiding electrode 304 of 202 rear side of support frame;Metal pins 103 can be cut down described in one passes through the first bus electrode
301 and first flow guiding electrode 302 be electrically connected with the metal electrode 305 on third carding tooth plate 211 and the 4th carding tooth plate 212, separately
Can be cut down described in one metal pins 103 by the second bus electrode 303 and the second flow guiding electrode 304 and the first carding tooth plate 205 and
Metal electrode 305 on second carding tooth plate 206 is electrically connected.
Further, the junction of the 202 side inner wall of support frame and support chip 210 offers rectangular recess, thus
A T-type stress isolation structure can be formed;
Further, the lower end of second resonance arm 208 is second integrally formed with rectangular block 209, the width of rectangular block 209
1.1 times of the width of resonance arm 208, the structure feature are downward in order to increase 208 telescopic mode vibration of the second resonance arm
The damping of displacement, causing to raise one's arm, 2 downward displacement dampings are different from damping is shifted up, and damping error between the two compensates exactly for
Negative effect of the terrestrial gravitation to telescopic mode vibration.Experiment shows and raises one's arm 2 to be all equivalent size and its width of raising one's arm
Degree is also equal to Sample Width situation control, and 5 width of rectangle is equal to 1.1 times of sample of 2 width of raising one's arm, its series equivalent electricity
Resistance can reduce by 30~60 Ω, improve its Q value (quality factor) of telescopic mould temperature-sensitive quartz resonator significantly.
Embodiment 2
Referring to Fig. 2, in the embodiment of the present invention, the m carding tooth plate includes the 4th carding tooth plate 404, the 5th carding tooth plate 405, the
Six carding tooth plates 406 and the 7th carding tooth plate 407, the n resonance arms include third resonance arm 401, the 4th resonance arm 402 and the 5th
Resonance arm 403, i.e., in the present embodiment, the m=4, n=3;The third resonance arm 401, the 4th resonance arm 402 and the 5th resonance
Arm 403 is successively spaced the upper inner wall for being connected to support frame 202, the 4th carding tooth plate 404, the 5th carding tooth plate the 405, the 6th comb
Gear piece 406 and the 7th carding tooth plate 407 be successively spaced the lower inner wall for being connected to support frame 202 and with third resonance arm the 401, the 4th
Resonance arm 402 and the 5th resonance arm 403 are laid staggeredly;
The bus electrode includes positioned at the first bus electrode 301 of 201 front side of twin I-beam pedestal and positioned at twin I-beam bottom
Second bus electrode 303 of 201 rear side of seat, flow guiding electrode include 302 He of the first flow guiding electrode positioned at 202 front side of support frame
Positioned at the second flow guiding electrode 304 of 202 rear side of support frame;Metal pins 103 can be cut down described in one passes through the first bus electrode
301 and the first metal electrode 305 on flow guiding electrode 302 and the 5th carding tooth plate 405 and the 6th carding tooth plate 406 be electrically connected, separately
Can be cut down described in one metal pins 103 by the second bus electrode 303 and the second flow guiding electrode 304 and the 4th carding tooth plate 404 and
Metal electrode 305 on 7th carding tooth plate 407 is electrically connected.
Further, the 6th carding tooth plate 406 and the 7th carding tooth plate 407 are overlapped with the two side columns of support frame 202, from
And realize the simplification of structure.
For the purposes of eliminating negative effect of the terrestrial gravitation to telescopic mode vibration, in the present embodiment, the third
Resonance arm 401 and the length and width of the 5th resonance arm 403 are all the same, the width and third resonance arm 401 of the 4th resonance arm 402
It is of same size, the length of the 4th resonance arm 402 is 1.02 times of the length of third resonance arm 401, three pieces in the present embodiment
Resonance arm uses the structure of reversely hung Yong, improves damping of the middle telescopic mode vibration to bottom offset of raising one's arm, leads to length of respectively raising one's arm
Degree stretch mode vibrates downward displacement damping and shifts up damping imbalance.To compensate for ground using the damping error of two sides
Negative effect of the ball gravitation to telescopic mode vibration of respectively raising one's arm.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.