High-stability length extension mode quartz temperature sensor adopting non-contact electrode
Technical Field
The invention relates to the field of sensors, in particular to a high-stability length extension mode quartz temperature sensor adopting a non-contact electrode.
Background
The resonant quartz temperature sensor is a novel digital sensor known for its excellent characteristics of high accuracy, high stability, ultra-high resolution, etc. The working mechanism is 'resonance', and is not dependent on 'resistance' generated by molecular thermal motion, so the ultralow temperature characteristic is quite good. This is much more sensitive than most existing temperature sensors, including platinum resistance temperature sensors, as indicated by the russian scholar malov. Widely used platinum resistance sensors have a high nonlinearity of up to 0.55 ℃, while quartz crystal temperature sensors have a nonlinearity of no more than 0.07 ℃. The resonant quartz crystal tuning fork temperature sensor is representative, and has the following main advantages:
1. the output signal is frequency, and can be directly input into a computer without adopting A/D conversion;
2. the accuracy can reach 0.05 ℃ (absolute error in temperature measuring range), which is more than 10 times higher than that of a general platinum resistance thermometer;
3. the repeatability is high, the long-term stability is good, the temperature can reach 0.01-0.001 ℃, and the temperature is 10-100 times higher than that of a universal industrial platinum resistance thermometer.
4. The temperature drift (accuracy drift caused by environmental temperature change) which is difficult to overcome by a traditional sensor (such as a platinum resistor), the time drift and the temperature drift brought by an analog circuit (such as the temperature drift generated by an A/D converter, an amplifier and the like of a platinum resistor thermometer) do not exist. Experiments show that when the working environment of the peripheral circuit is changed at +5 ℃ to +35 ℃, the temperature measurement accuracy is only changed by about 0.005 ℃.
5. Because its output signal is frequency, the characteristics of the temperature meter are less affected by the drift of the amplifier and the stability of the supply voltage.
The disadvantage is that the working temperature range is narrow, especially the high temperature range can not meet the requirements of more fields, and the maximum working temperature is 250 ℃. In order to realize environmental protection, a resonant quartz temperature sensor is used to replace an first-class standard glass thermometer internationally at present to realize mercury-free temperature measurement. However, the biggest difficulty in achieving this task is to widen the high temperature operating temperature range, increase accuracy, and further improve the repeatability and long-term stability of the sensor product. In other words, the present subject is to widen the high temperature operating temperature range, reduce the thermal hysteresis of the resonant quartz temperature sensor, and improve the repeatability and long-term stability. Especially for a high-stability resonant quartz temperature sensor with a wide operating temperature range, the difficulty is greater because of the following reasons:
1. quartz crystal is an anisotropic piezoelectric crystal, and various cut quartz crystals have relatively small linear expansion coefficients, so that metal materials suitable for electrodes cannot be realized at present, such as: gold, silver, copper, aluminum, etc., to achieve a complete match of thermal expansion coefficients. Therefore, when the resonant quartz temperature sensor is placed in a high-temperature environment for temperature detection, thermal stress is generated near the junction of the metal electrode and the piezoelectric quartz crystal, so that the resonant frequency of the quartz temperature sensor changes, and the thermal hysteresis phenomenon of the sensor occurs. From the theory of piezoelectric resonance, it is known that thermal hysteresis not only reduces accuracy, but also limits improvements in consistency and repeatability. This thermal stress relief requires a special heat treatment technique, but it is not realistic to frequently subject the sensor to a complicated heat treatment as a product.
2. The metal electrode arranged on the surface of the quartz resonance unit can convert electric field energy into mechanical strain energy in the quartz vibrating arm body by utilizing a piezoelectric effect; the purpose of the various quartz resonator elements is to be able to excite different sensor resonance modes. The excitation of the sensor with different resonance modes depends mainly on the structure of the electrodes, the physical structure of the quartz resonant cell, the mechanical properties of the quartz crystal cut and the piezoelectric properties. In other words, the material, film thickness and process quality of the metal electrode will cause the mass load and dynamic impedance Z0 and static resistance R0 of the quartz resonator element, such as the vibrating arm, to change, therefore, moisture absorption, oxidation, corrosion and aging of the electrode can cause the Z0 and R0 to change. Aluminum, silver, gold/chromium thin film electrodes, all of which are prone to moisture absorption, are susceptible to oxidation or corrosion by certain reactive gases, such as reactive oxygen, chlorine, fluorine, resulting in enlargement of Z0 and R0. Experiments show that Z0 and R0 can be increased by 1.5-2 times in the quartz tuning fork in the chlorine and fluorine atmosphere for about 1 week.
3. In a wide working temperature range, particularly when the temperature is high, the mutual diffusion of the two materials in the vicinity of the surface layer of the boundary between the metal electrode and the piezoelectric quartz crystal causes the surface layer of the quartz crystal to generate metal ions, and the surface layer of the metal electrode can also generate sio2 molecules, so that the vicinity of the surface layer of the boundary between the metal electrode and the piezoelectric quartz crystal is modified, and the long-term stability of the resonant quartz temperature sensor is influenced.
4. In particular, most high-temperature resonant quartz temperature sensors use certain high-temperature metal materials with good stability at high temperature and excellent resistance temperature coefficient as metal film excitation electrodes. In this case, not only the stability under high temperature conditions and the constancy of the temperature coefficient of resistance, but also the stability of its mechanical strength must be considered. Due to the change of the environmental temperature, the high melting point metal material is subject to deterioration, delamination, cracking, semiconduction or drastic deterioration of the electrical conductivity.
Obviously, the metal electrode arranged on the surface of the quartz resonance unit is a double-edged sword, which plays an extremely critical role in the resonance type quartz temperature sensor, but seriously influences the thermal hysteresis characteristic, the repeatability and the long-term stability of the resonance type quartz temperature sensor.
Therefore, a resonant quartz temperature sensor which can skillfully use a metal electrode, has low working frequency, can work in a wide temperature range, has small volume, low power consumption, high precision, high response speed, good repeatability and good long-term stability is urgently desired.
Disclosure of Invention
The invention aims to provide a high-stability length-expansion-mode quartz temperature sensor adopting a non-contact electrode, so as to solve the problems.
In order to achieve the purpose, the invention provides the following technical scheme:
a high-stability length-expansion-die quartz temperature sensor adopting a non-contact electrode comprises a packaging body and a resonance component positioned in the packaging body, wherein the resonance component is made of quartz crystals; the packaging body comprises a pipe cap with an opening at one end and a kovar metal sheet which is connected to the opening side of the pipe cap in a sealing mode, two kovar metal pins which are used for connecting the positive side and the negative side of an external power supply respectively penetrate through the kovar metal sheet, and a glass powder insulator is connected to the connection position of the kovar metal pins and the kovar metal sheet in a sealing mode; the resonance component is of an integrated structure and comprises a double-H-beam base, a supporting frame body, m comb tooth plates and n resonance arms, wherein the m comb tooth plates and the n resonance arms are positioned in the supporting frame body, m and n are positive integers, m is larger than n, and the number of metal electrodes on the m comb tooth plates is 2 n; the double H-beam base is connected with the supporting frame body through the damping supporting seat; the double H-beam base and the supporting frame body are respectively provided with a bus electrode and a guide electrode; at least one surface of the comb-tooth sheet is opposite to one surface of the resonance arm, and a metal electrode is arranged on the surface of the comb-tooth sheet opposite to the resonance arm and is electrically connected with the kovar metal pin through a confluence electrode and a guide electrode; the double H-beam base is connected with the bus electrode, the supporting frame body is connected with the flow guide electrode, and the comb-tooth sheet is connected with the metal electrode in a non-contact mode.
In a further aspect: helium gas with high-speed heat conduction capacity is filled in the packaging body.
In a further aspect: the quartz crystal of the resonant assembly is a double-rotation-angle xytl (115 ° ± 0.5)/(15 ° ± 1 °) quartz crystal.
In a further aspect: the shock absorption supporting seat is provided with a square through hole.
In a further aspect: the bus electrode, the flow guide electrode and the metal electrode are all four-layer composite metal films formed by a chromium film, a kovar alloy or hastelloy alloy film, an AgMo65 silver-molybdenum alloy film and a borosilicate glass dielectric film.
In a further aspect: the m comb tooth plates comprise a first comb tooth plate, a second comb tooth plate, a third comb tooth plate and a fourth comb tooth plate, and the n resonance arms comprise a first resonance arm and a second resonance arm. The first resonance arm and the second resonance arm are arranged at the center of the supporting frame body and are connected with the side inner walls of the supporting frame body through the supporting pieces at two sides, the first comb tooth piece and the third comb tooth piece are connected to the upper inner wall of the supporting frame body and are symmetrically distributed at two sides of the first resonance arm, and the second comb tooth piece and the fourth comb tooth piece are connected to the lower inner wall of the supporting frame body and are symmetrically distributed at two sides of the second resonance arm; the bus electrode comprises a first bus electrode positioned on the front side of the double-H-beam base and a second bus electrode positioned on the rear side of the double-H-beam base, and the guide electrode comprises a first guide electrode positioned on the front side of the supporting frame body and a second guide electrode positioned on the rear side of the supporting frame body; one kovar metal pin is electrically connected with metal electrodes on the third comb-tooth piece and the fourth comb-tooth piece through the first bus electrode and the first guide electrode, and the other kovar metal pin is electrically connected with the metal electrodes on the first comb-tooth piece and the second comb-tooth piece through the second bus electrode and the second guide electrode.
In a further aspect: rectangular grooves are formed in the connecting positions of the inner walls of the side of the supporting frame body and the supporting pieces.
In a further aspect: the lower end of the second resonance arm is integrally formed with a rectangular block, and the width of the rectangular block is 1.1 times of that of the second resonance arm.
In a further aspect: the m comb tooth plates comprise an eighth comb tooth plate, a fifth comb tooth plate, a sixth comb tooth plate and a seventh comb tooth plate, and the n resonance arms comprise a third resonance arm, a fourth resonance arm and a fifth resonance arm; the third resonance arm, the fourth resonance arm and the fifth resonance arm are sequentially connected to the upper inner wall of the supporting frame at intervals, and the eighth comb tooth piece, the fifth comb tooth piece, the sixth comb tooth piece and the seventh comb tooth piece are sequentially connected to the lower inner wall of the supporting frame at intervals and are arranged in a staggered manner with the third resonance arm, the fourth resonance arm and the fifth resonance arm; the bus electrode comprises a first bus electrode positioned on the front side of the double-H-beam base and a second bus electrode positioned on the rear side of the double-H-beam base, and the guide electrode comprises a first guide electrode positioned on the front side of the supporting frame body and a second guide electrode positioned on the rear side of the supporting frame body; one kovar metal pin is electrically connected with metal electrodes on the fifth comb-tooth piece and the sixth comb-tooth piece through the first bus electrode and the first guide electrode, and the other kovar metal pin is electrically connected with metal electrodes on the eighth comb-tooth piece and the seventh comb-tooth piece through the second bus electrode and the second guide electrode.
In a further aspect: the sixth comb tooth sheet and the seventh comb tooth sheet are overlapped with two side columns of the supporting frame body; the third resonant arm and the fifth resonant arm are the same in length and width, the fourth resonant arm is the same in width as the third resonant arm, and the length of the fourth resonant arm is 1.02 times of the length of the third resonant arm.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a novel structure of a quartz temperature sensor with multiple vibration arm length telescopic modes, which adopts a non-contact electrode and can prevent and inhibit the resonance energy of a vibration arm from leaking, and groping a structure of the non-contact electrode adopting a high-temperature-resistant and aging-resistant four-layer composite metal film, so that the maximum working temperature can reach more than 300 ℃, the thermal hysteresis is reduced, and the long-term stability of the non-contact electrode is improved. The length telescopic mode quartz temperature sensor has the advantages of low working frequency (hundreds of KC-1 MHZ), strong anti-interference capability, good long-term stability, high temperature resolution, high precision and high response speed; in addition, the parasitic vibration mode is few, the requirement on process errors is not strict, the rate of finished products is high, the consistency is good, and the uncertainty of a typical sample is still kept between 0.05 and 0.06 ℃ after five temperature cycle detection tests at the temperature of between 30 and 350 ℃, which shows that the thermal hysteresis of the sensor is very small.
Drawings
Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of a resonant assembly in embodiment 2 of the present invention.
Notations for reference numerals: 101-pipe cap, 102-kovar metal sheet, 103-kovar metal pin, 104-glass powder insulator, 201-double H-beam base, 202-supporting frame body, 203-damping supporting seat, 204-square through hole, 205-first comb tooth sheet, 206-second comb tooth sheet, 207-first resonant arm, 208-second resonant arm, 209-rectangular block, 210-supporting sheet, 211-third comb tooth sheet, 212-fourth comb tooth sheet, 301-first bus electrode, 302-first guide electrode, 303-second bus electrode, 304-second guide electrode, 305-metal electrode, 401-third resonant arm, 402-fourth resonant arm, 403-fifth resonant arm, 404-eighth comb tooth sheet, 405-fifth comb tooth sheet, 406-sixth comb tooth sheet, 407-seventh comb tooth sheet.
Detailed Description
The present invention will be described in detail with reference to the following embodiments, wherein like or similar elements are designated by like reference numerals throughout the several views, and wherein the shape, thickness or height of the various elements may be expanded or reduced in practice. The examples are given solely for the purpose of illustration and are not intended to limit the scope of the invention. Any obvious modifications or variations can be made to the present invention without departing from the spirit or scope of the present invention.
Referring to fig. 1, a high-stability length-scalable quartz temperature sensor using a non-contact electrode includes a package and a resonant element located in the package, wherein the resonant element is made of quartz crystal; the packaging body comprises a pipe cap 101 with an opening at one end and a kovar metal sheet 102 connected to the opening side of the pipe cap 101 in a sealing mode, two kovar metal pins 103 used for connecting the positive side and the negative side of an external power supply respectively penetrate through the kovar metal sheet 102, and a glass powder insulator 104 is connected to the joint of the kovar metal pins 103 and the kovar metal sheet 102 in a sealing mode, so that the sealing performance of the packaging body is guaranteed, and when the packaging body is used, current is introduced into the packaging body through the kovar metal pins 103;
the resonance component is of an integrated structure and comprises a double H-beam base 201, a supporting frame 202, m comb tooth plates and n resonance arms, wherein the m comb tooth plates and the n resonance arms are positioned in the supporting frame 202, m and n are positive integers, m is larger than n, and the number of the metal electrodes 305 on the m comb tooth plates is 2 n; the double-H-beam base 201 is connected with the supporting frame 202 through a damping supporting seat 203; the double-H-beam base 201 and the supporting frame 202 are respectively provided with a bus electrode and a guide electrode; at least one surface of the comb-tooth sheet is opposite to one surface of the resonance arm, and a metal electrode 305 is arranged on the surface of the comb-tooth sheet opposite to the resonance arm, and the metal electrode 305 is electrically connected with the kovar metal pin 103 through a bus electrode and a flow guide electrode; the bus electrode, the guide electrode and the metal electrode 305 are in non-contact connection with the resonance component (namely, the double-H-beam base 201 and the bus electrode, the supporting frame 202 and the guide electrode, and the comb-tooth sheet and the metal electrode 305); by "non-contacting electrode" is meant that both the excitation and the reception electrodes are separated from the surface of the heat sensitive quartz resonator by a small gap, which is 0.001mm to 1.5 mm. When the exciting electrode and the receiving electrode are respectively connected with a power supply, the electrodes respectively establish corresponding electrostatic fields on the surfaces of the thermosensitive quartz resonators through capacitance effect between the electrodes and the power supply, and the electrostatic fields of the electrodes in the two corresponding surface areas of the thermosensitive quartz resonators deform the thermosensitive quartz resonators due to the inverse piezoelectric effect. Since the external circuit supplies energy periodically, length stretching vibration is generated; unlike conventional approaches, the "non-contact electrode" structure of the present invention is different from conventional "non-contact electrode" structures: the conventional substrate material of the non-contact electrode is different from the material of the thermosensitive quartz resonance arm, and the interval between the substrate material and the thermosensitive quartz resonance arm is difficult to reach a 'tiny' gap of 0.001 mm-1.5 mm.
The structure of the non-contact electrode is characterized in that a non-contact electrode substrate, namely the comb-tooth plate, and a resonance arm without a metal electrode are of an integrated structure, namely the comb-tooth plate and the resonance arm are of an integrated structure, and the structure is not only the same as a thermosensitive quartz resonator material, but also the crystal orientations of the comb-tooth plate and the resonance arm are completely the same, and the thermal expansion coefficients of the comb-tooth plate and the resonance arm are completely matched. It is clear that even over a wide temperature range, the variation in the spacing due to thermal expansion of the comb plate and the resonator arm remains zero. Therefore, the distance between the non-contact electrode substrate, namely the comb tooth plate, and the resonance arm is always kept unchanged in a wide temperature range, so that the sensor has high precision, good stability and wide temperature measurement range.
Although the non-contact electrode substrate of the invention, namely the gap between the quartz crystal comb-tooth sheet and the length extension mode thermal sensitive quartz resonance arm without the metal electrode is 'tiny' and is 0.001 mm-1.5 mm, the effect is quite large: the excitation and receiving efficiency is high, and the tiny gap in the wide temperature range is kept relatively unchanged, so that the problem that the quartz temperature sensor is long-term troubled, namely the problem that the wide temperature range works, the thermal hysteresis and the long-term stability are mutually contradictory, is solved.
Further, helium gas with high-speed heat conduction capacity is filled in the packaging body.
The helium gas in the hermetically sealed structural component 8 has two functions:
1. the helium gas filled in the hermetically sealed structural part 8 has a pressure of one atmospheric pressure, and thus it is possible to prevent external oxygen from entering, reduce oxidation of the material, and improve long-term stability.
Helium is the second place gas in various gases at present according to the size of the heat conductivity coefficient; although the thermal conductivity of hydrogen is the first order and is 0.163W/(m3 ℃), the thermal conductivity of helium is 0.144W/(m3 ℃), however, hydrogen is a reducing gas which can cause reduction reaction with some materials in the quartz temperature sensor, and the long-term stability of the quartz temperature sensor is affected. In addition, hydrogen is flammable and dangerous, so the present invention uses helium.
Further, the quartz crystal of the resonant assembly is a double-rotation angle xytl (115 ° ± 0.5)/(15 ° ± 1 °) quartz crystal.
The double-turning-angle quartz cut type xytl (115 degrees +/-0.5 degrees/(15 degrees +/-1 degrees)) is a novel thermosensitive quartz cut type suitable for the use of the length-stretching vibration mode quartz temperature sensor and proposed and used by the inventor for the first time in the world, and has innovation and practicability. For the sake of understanding by international associates or other professionals, the cut-type notation of the newly invented thermal quartz wafer is written as follows according to the cut-type notation writing form specified by the IRE standard:
xytl(115°±0.5°)/(15°±1°)。
the international Radio engineering society IRE (Institute of Radio Engineers standards specifies a cut symbol comprising a set of letters (X, Y, Z, t, l, b) and an angle, the original directions of the thickness and length of the quartz wafer are represented by the sequential order of any two letters in X, Y, Z, the positions of the rotation axes are represented by letters t (thickness), l (length), b (width), when the angle is positive, counterclockwise rotation is represented, when the angle is negative, clockwise rotation is represented, the thickness of the original position of the quartz thermal-sensitive cut wafer represented by the xytl (115 ° ± 0.5)/(15 ° ± 1 °) cut is in the X-axis (electrical axis of the quartz crystal) direction and the length thereof is in the Y-axis (mechanical axis of the quartz crystal) direction, in other words, the original position thereof is an X-cut family quartz wafer whose normal direction is the electrical axis direction, the length direction of the quartz wafer at the original position is the mechanical axis direction; the cutting type is formed by cutting a quartz wafer at an original position by rotating the quartz wafer by any one angle in an interval of 115.5-114.5 degrees anticlockwise around a thickness t (an electric axis of the quartz crystal) and then rotating the quartz wafer by any one angle in an interval of 14-16 degrees clockwise around a length l (a mechanical axis of the quartz crystal). Obviously, the thermosensitive quartz cut type is a double-turning-angle quartz cut type; the advantages of the thermal sensitive quartz cutting type are high temperature sensitivity, and the first-order temperature coefficient of the thermal sensitive quartz cutting type. In addition, the cut parasitic vibration mode is very few, and the requirement on the process error is not strict (for example, the requirement on the precision of the anticlockwise rotation angle around the electric axis of the quartz crystal is not high, and the error can be up to +/-0.5 degrees, while the requirement on the precision of the rotation angle is lower and the error can be up to +/-1 degrees when the mechanical axis of the quartz crystal rotates clockwise, so that the double-rotation-angle cut xytl (115 degrees +/-0.5 degrees/(15 degrees +/-1 degrees) adopted by the invention can greatly improve the yield of products, improve the consistency of good products and reduce the production cost.
Further, the shock absorbing support seat 203 has a square through hole 204, which can form a stress isolation structure in a shape like a Chinese character 'jing' at the lower portion of the support frame 202.
In addition to the above features, the present invention optimizes the bus electrode, the guide electrode and the metal electrode 305, most of the conventional resonant quartz temperature sensors use a silver electrode or a chromium-gold double-layer electrode, and can only work in an environment below 250 ℃, and in order to extend the temperature measurement range to above 350 ℃, the bus electrode, the guide electrode and the metal electrode 305 are four-layer composite metal films composed of a chromium film, a kovar alloy or hastelloy alloy film, an AgMo65 silver-molybdenum alloy film and a borosilicate glass dielectric film.
Specifically, the first metal film on the multi-layer composite metal film structure is a chromium film, and the thickness of the chromium film is 0.1-3 mu m. This is because the coefficient of thermal expansion of chromium is 6.2X 10-6/deg.C, which is matched in comparison to the coefficient of thermal expansion of the quartz crystal of xytl (115 ° + -0.5)/(30 ° + -5 deg.). In addition, the chromium metal has strong affinity and binding force with the quartz crystal. Therefore, the chromium thin film is bonded to the quartz crystal more firmly even in a wide temperature range.
The second layer of metal film compounded with the chromium metal film is a kovar alloy or hastelloy film; the thickness is 1 to 3 μm. The Kovar alloy is an iron-cobalt-nickel alloy, the Hastelloy is an iron-cobalt-nickel alloy containing tungsten, the thermal expansion coefficients of the Kovar alloy and the Hastelloy are 4.7-5.4 multiplied by 10 < -6 >/DEG C, and the Kovar alloy is matched with the chromium metal film.
The third layer of metal film is an AgMo65 silver-molybdenum alloy film, and the thickness of the third layer of metal film is 1-3 μm. The density is 0.2-10.3g/cm3, the hardness is 140-170HV10, the conductivity is 18-22 m/(omega mm2), and the alloy can be matched with a kovar alloy or hastelloy film;
the fourth film is a borosilicate glass dielectric film with a thickness of 1-5 μm. It is responsible for protection and ensures long-term stability of the sensor. The borosilicate glass dielectric film can be completely covered on the third layer of metal film, and can also be only covered on the optical axis Z' surface of the quartz crystal comb-tooth sheet and is close to the side surface of the multilayer composite metal film structure, so as to ensure the exposed chromium layer on the side surface of the electrode and prevent the multilayer composite metal film from adsorbing gas, moisture, impurities and the like from the side surface to cause electrochemical corrosion (the chromium layer is easy to adsorb gas and certain impurities).
The following description is given with reference to the arrangement of the m comb plates and the n resonator arms in the support frame 202 of the two embodiments.
Example 1
Referring to fig. 1, in the embodiment of the present invention, the m comb plates include a first comb plate 205, a second comb plate 206, a third comb plate 211, and a fourth comb plate 212, and the n resonance arms include a first resonance arm 207 and a second resonance arm 208, that is, in the embodiment, m =4 and n = 2. The first resonance arm 207 and the second resonance arm 208 are disposed at the center of the supporting frame 202 and connected to the inner side walls of the supporting frame 202 through the supporting pieces 210 at the two sides, the first comb-tooth plate 205 and the third comb-tooth plate 211 are connected to the upper inner wall of the supporting frame 202 and symmetrically distributed at the two sides of the first resonance arm 207, and the second comb-tooth plate 206 and the fourth comb-tooth plate 212 are connected to the lower inner wall of the supporting frame 202 and symmetrically distributed at the two sides of the second resonance arm 208, in summary, in this embodiment, four comb-tooth plates are distributed into two groups, each two comb-tooth plates are a group, and one resonance arm is inserted between each group;
the bus electrodes comprise a first bus electrode 301 positioned on the front side of the double-H-beam base 201 and a second bus electrode 303 positioned on the rear side of the double-H-beam base 201, and the flow guide electrodes comprise a first flow guide electrode 302 positioned on the front side of the supporting frame 202 and a second flow guide electrode 304 positioned on the rear side of the supporting frame 202; one kovar metal pin 103 is electrically connected with the metal electrodes 305 on the third comb-tooth plate 211 and the fourth comb-tooth plate 212 through the first bus electrode 301 and the first current-guiding electrode 302, and the other kovar metal pin 103 is electrically connected with the metal electrodes 305 on the first comb-tooth plate 205 and the second comb-tooth plate 206 through the second bus electrode 303 and the second current-guiding electrode 304.
Further, a rectangular groove is formed at the joint of the inner wall of the supporting frame 202 and the supporting sheet 210, so that a T-shaped stress isolation structure can be formed;
further, a rectangular block 209 is integrally formed at the lower end of the second resonant arm 208, and the width of the rectangular block 209 is 1.1 times of the width of the second resonant arm 208, which is characterized in that the damping of the downward displacement of the length extension mode vibration of the second resonant arm 208 is increased, so that the damping of the downward displacement of the vibrating arm 2 is different from the damping of the upward displacement, and the negative effect of the gravity on the length extension mode vibration is exactly compensated by the damping difference between the two. Experiments show that compared with the situation that the vibrating arms 2 are all equal in size and the width of the vibrating arms is equal to the width of the sample, the series equivalent resistance of the sample with the width of the rectangle 5 equal to 1.1 times of the width of the vibrating arms 2 can be reduced by 30-60 omega, and the Q value (quality factor) of the length expansion mode thermosensitive quartz resonator is remarkably improved.
Example 2
Referring to fig. 2, in the embodiment of the present invention, the m comb plates include an eighth comb plate 404, a fifth comb plate 405, a sixth comb plate 406, and a seventh comb plate 407, and the n resonance arms include a third resonance arm 401, a fourth resonance arm 402, and a fifth resonance arm 403, that is, in the embodiment, m =4, n = 3; the third resonance arm 401, the fourth resonance arm 402 and the fifth resonance arm 403 are sequentially connected to the upper inner wall of the supporting frame 202 at intervals, and the eighth comb-tooth plate 404, the fifth comb-tooth plate 405, the sixth comb-tooth plate 406 and the seventh comb-tooth plate 407 are sequentially connected to the lower inner wall of the supporting frame 202 at intervals and are arranged in a staggered manner with the third resonance arm 401, the fourth resonance arm 402 and the fifth resonance arm 403;
the bus electrodes comprise a first bus electrode 301 positioned on the front side of the double-H-beam base 201 and a second bus electrode 303 positioned on the rear side of the double-H-beam base 201, and the flow guide electrodes comprise a first flow guide electrode 302 positioned on the front side of the supporting frame 202 and a second flow guide electrode 304 positioned on the rear side of the supporting frame 202; one kovar metal pin 103 is electrically connected with the metal electrodes 305 on the fifth and sixth comb- tooth plates 405 and 406 through the first bus electrode 301 and the first current-guiding electrode 302, and the other kovar metal pin 103 is electrically connected with the metal electrodes 305 on the eighth and seventh comb- tooth plates 404 and 407 through the second bus electrode 303 and the second current-guiding electrode 304.
Further, the sixth and seventh comb- tooth plates 406 and 407 overlap with both side posts of the support frame 202, thereby simplifying the structure.
In order to eliminate the negative influence of the gravity on the length-stretching mode vibration, in this embodiment, the lengths and widths of the third resonant arm 401 and the fifth resonant arm 403 are the same, the width of the fourth resonant arm 402 is the same as the width of the third resonant arm 401, and the length of the fourth resonant arm 402 is 1.02 times the length of the third resonant arm 401. Therefore, the negative influence of the earth gravity on the vibration of the telescopic mode of the length of each vibration arm is compensated by using the damping difference of the two sides.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.