CN106323511B - One chip quartz resonance pressure and temperature sensor and its process - Google Patents
One chip quartz resonance pressure and temperature sensor and its process Download PDFInfo
- Publication number
- CN106323511B CN106323511B CN201610638733.7A CN201610638733A CN106323511B CN 106323511 B CN106323511 B CN 106323511B CN 201610638733 A CN201610638733 A CN 201610638733A CN 106323511 B CN106323511 B CN 106323511B
- Authority
- CN
- China
- Prior art keywords
- pressure
- chip
- power
- column
- quick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 239000010453 quartz Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 title claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 14
- 239000005388 borosilicate glass Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000007906 compression Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000013016 damping Methods 0.000 claims description 6
- 238000001534 heteroepitaxy Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 4
- 230000008602 contraction Effects 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 33
- 239000000463 material Substances 0.000 abstract description 15
- 230000035882 stress Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 7
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 230000008859 change Effects 0.000 description 10
- 229920001971 elastomer Polymers 0.000 description 9
- 239000000806 elastomer Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000009530 blood pressure measurement Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000282376 Panthera tigris Species 0.000 description 1
- 241000935974 Paralichthys dentatus Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
- G01L1/162—Measuring force or stress, in general using properties of piezoelectric devices using piezoelectric resonators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
One chip quartz resonance pressure and temperature sensor and its process are related to a kind of pressure and temperature sensor.Solve the problems, such as that existing resonance type quartz crystal crystal pressure and temperature sensor volume are big, technology difficulty is high, precision is low, stability is poor.Present invention employs the Li Min of high stable-temperature-sensitive quartz crystal cut type, the structure of one chip Li Min-heat sensitive resonance instrument of high quality factor, the transformational structure of pressure-compressing force, quartzy low stress sealing structure and techniques, using low stress sealing structure and technology utilization quartz crystal, the superior elasticity of SiC layer, monocrystalline silicon, borosilicate glass and Covar, conjunction with semiconductors technique is realized.Although the coefficient of thermal expansion of silicon and quartz material differs, the cushioning effect of amorphous state SiC layer is utilized, significantly reduces the thermal stress of quartz pressure and temperature sensor.The present invention is suitable as pressure and temperature sensor uses.
Description
Technical field
The invention belongs to the piezoelectric resonant sensors fields of automatic technology, and in particular to a kind of one chip quartz resonance pressure
Power and temperature sensor and its process.
Background technology
Quartz resonance pressure sensor (being abbreviated as QPS) is a kind of high-accuracy, high stable sensor, it has excellent
Measure the factor-high-precision, ultrahigh resolution, excellent long-time stability.The operating mode of QPS mainly has 3 kinds at present：Sound body
Wave mode (BAW), surface acoustic wave pattern (SAW) and broad sense surface acoustic wave pattern or broad sense acoustic bulk wave pattern, such as surface are horizontal
Wave (is also referred to as shallow acoustic bulk wave or plunders face bulk wave) pattern.Wherein, range is most wide, precision highest, long-time stability are it is still further preferred that apply
Add the QPS of the full quartz construction of the thickness shear vibration of radial compression force, the accuracy of highest level QPS at present has reached pressure
The limit of measurement index, accuracy are up to 0.008%F.S, and pressure measurement range is 0.1~276Mpa or 0.1~1.38Mpa,
Resolution ratio is 1 × 10-6, but there are following disadvantages for it：
1), in order to making the quick resonator of Quartz Force, lead power elastomer, pressure --- force transducer three is in elasticity
Number, temperature coefficient match, using full quartz construction, i.e. three all utilizes same crystal to make, to eliminate non-resilient mistake
Difference thermally expands non-match error.Hewlett-Packard (HP) company of France, the Quartztronics in the U.S. are public at present
The QPS of the productions such as department, Quartzdyne companies, Schlumberger companies, Paroscientific companies is all integrated complete
Quartz crystal structure, it is main to be used suitable for high temperature, high pressure, high-accuracy measurement.Because quartz crystal is anisotropic, power
Quick quartz-crystal resonator, pressure-force transducer (diaphragm), lead power elastomer must be by the quartz of same cut type, same orientation
Crystal is constituted.In addition, the pilot cylinder for reaching optical grade standard must be processed in one piece of quartz crystal and in its cylinder
The high-accuracy quick resonator of lens type power in portion makes in the quick resonator surface of lens type power of higher depth without parasitism in pilot cylinder
The metal excitation electrode of pattern makes surface electrode in quartzy pilot medial wall of the tube, and is connect for ohm with external circuit bonding point
It touches, technology difficulty is quite big.Engineering college of Yichun College of China reforms the structure, reduces technology difficulty, still
It is but to sacrifice sensor accuracy and temperature stability and long-time stability as cost.
2), the volume of the QPS is larger, and it is more than several times usually bigger than diffusion silicon pressure sensor, at high price, application method
Complexity, therefore greatly fettered its application field.
3), the quick resonator of its Quartz Force and heat sensitive resonance instrument be all separate structure, non-one chip, therefore measured angle value and
Pressure value is not the numerical value of same position, synchronization, therefore no matter carries out the temperature-compensating of pressure sensor, or accurate
The temperature and pressure value of measured body is measured, accuracy of measurement all has larger room for promotion.
Another kind is beam mode QPS, its main suitable absolute pressure, low pressure, the work of narrow warm area, such as Russia
PKMA-1000.0 types QPS utilizes the sound of torsional vibration pattern using the double tuning fork resonator sensitive pressures of beam mode closed end
Pitch sensitive temperature.Zhong electricity groups 49 have also carried out pattern closed end double-tone fork resonator type Study on pressure sensor.Such pressure
The shortcomings that force snesor is：
1), pressure guiding device, pressure-force transducer are that bellows or glass step on pipe.The quick resonator of its power is not direct sensitive quilt
Measuring pressure, but pipe is stepped on by the third party-bellows or glass, the response time is not only increased, and reduce the standard of pressure measurement
Exactness, stability.
2), the resolution ratio, temperature stability of beam mode QPS is much smaller than thickness-shear vibration mode formula QPS.For reality
Photoetching and the chemical etching of the closed end double-tone fork quick resonator of power of beam mode are now used, countries in the world all use at present
Frequency temperature characteristics are parabolical Z cut types or Z+2 cut type quartz crystals, and frequency temperature characteristics are conic section, can not show a candle to cubic curve
AT cut types, it is clear that the former pressure resolution, temperature stability, long-time stability are inferior more than the latter.
3), closed end double-tone pitches the quick resonator of power and leads the unstressed sealing-in of power elastomer, pressure-force transducer (diaphragm)
Technology be influence QPS accuracy, long-time stability and temperature stability maximum bottleneck technique.There is presently no find to cut with Z
The seal, sealing materials that type or the Z+2 cut type double-tones fork quick resonator of power exactly match.
In addition, the quartz resonance pressure/temperature sensor of countries in the world is nearly all non-one-piece construction at present.Change speech
It, is all almost biplate or multiple-piece construction, i.e., wherein a piece of or several are used for sensitive pressure characteristic, it is in addition a piece of or several with
In sensitive temperature characteristic.
Invention content
The present invention is that existing resonance type quartz crystal crystal pressure and temperature sensor volume be big, technology difficulty in order to solve
The problem of high, temperature stability and time stability are further promoted, thus provide a kind of one chip quartz resonance pressure and
Temperature sensor and its process..
One chip quartz resonance pressure of the present invention and temperature sensor, it include pressure-compression force transducer,
Sensor housing 1, one chip heat sensitive resonance instrument 3, one chip force-sensing sensor 4, reference pressure column 8, pressure interface 9 and pedestal
11；
Pressure-compression force transducer includes two pressure conduction columns 5 and pilot flexible sheet 2；
The lower end of two pressure conduction columns 5 is each attached to the upper surface of pilot flexible sheet 2, and with pilot flexible sheet 2
It is integrally formed part；
Reference pressure column 8 is the hollow tubular structure that top has ladder notch, and the bottom end of reference pressure column 8 connects for pressure
Mouth 9；
The top of reference pressure column 8 is fixed on 2 lower surface of pilot flexible sheet, and positioned at the center of pilot flexible sheet 2；
The side wall of reference pressure column 8 is opened there are four circular through hole 6, and four circular through holes 6 pass through along the center line of reference pressure column 8
The heart is symmetrical, and four circular through holes 6 close on the top of reference pressure column 8；The lower part of reference pressure column 8 passes through 11 center of pedestal；
Pilot flexible sheet 2 be located in the upside of pedestal 11, and airtight connection structure between pilot flexible sheet 2 and pedestal 11
At Pressure chamber；Sensor housing 1 be located in the upside of pedestal 11, pilot flexible sheet 2 be located at sensor housing 1 and pedestal 11 it
Between；Two pressure conduction columns 5, one chip force-sensing sensor 4 and one chip heat sensitive resonance instrument 3 be respectively positioned on pilot flexible sheet 2 with
Between sensor housing 1；
Two pressure conduction columns 5 are located at the opposite both sides of 8 extended line of reference pressure column；And 8 extended line of reference pressure column with
The distance between two pressure conduction columns 5 are equal；
Every pressure conduction column 5, which is top, has half cylinder for cutting off notch；The both ends of one chip force-sensing sensor 4
It is separately fixed in half cropping notch of two pressure conduction columns 5；One chip heat sensitive resonance instrument 3 is fixed on the quick sensing of one chip power
On device 4；
When Fluid pressure is by the way that the pressure interface 9 of reference pressure column 8 is into Pressure chamber and pressure is higher than an atmospheric pressure
When, pilot flexible sheet 2 generates upper convex deformation, since the fixed traction between reference pressure column 8 and pilot flexible sheet 2 is made
With two pressure conduction columns 5 generate inside contraction deformation, to the quick sensing of one chip power between two pressure conduction columns 5
The power that device 4 applies horizontal direction increases, and the pressure of Pressure chamber is higher, and the power for being applied to horizontal direction is bigger；
When Fluid pressure is by the way that the pressure interface 9 of reference pressure column 8 is into Pressure chamber and pressure is less than an atmospheric pressure
When, the deformation protrusion of pilot flexible sheet 2 becomes smaller, and two pressure conduction columns 5 restore to vertical direction, to two pressure conduction columns
The power for the horizontal direction that one chip force-sensing sensor 4 between 5 applies becomes smaller, and the pressure of Pressure chamber is lower, applies water supply
Square to power it is smaller；
The process of one chip force-sensing sensor in one chip quartz resonance pressure and temperature sensor, the tool of this method
Body step is：
Step 1: making 2 plate shapes using photoetching and anisotropic etching legal system is similar to semicircular monocrystal silicon structure part；
Step 2: it is 80 μm or so non-so that monocrystal silicon structure part upper surface and side is covered with thickness using semiconductor technology
Crystalline state SiC layer；
Step 3: cladding thickness is less than 10 μm of SiO in amorphous state SiC layer using heteroepitaxy2Layer；
Step 4: making under normal temperature condition to be covered with SiO using oxygen plasma surface activation method2The monocrystal silicon structure part of layer
Being integrally formed power sensing structure part is bonded with the quick resonator of power；
Step 5: using electrostatic sealing-in method in the equal sealing-in semicircle borosilicate glass in integrated force sensing structure part both ends
Piece, then so that borosilicate glass piece is sintered together with pressure conduction column with cryogenic glass powder, it is formed rigidly connected unstressed
Sealing-in body.
The quick resonator of power of the present invention is placed between the relative step notch of 2 pressure conduction columns, and utilizes unstressed envelope
Technique bonding is connect, freely supported structure quartz crystal composite beam is constituted.The upper end of reference pressure column is fixed between 2 pressure conduction columns
Connector on, play the role of draw the connector.And the lower end of reference pressure column is fastened on pedestal, prevents connector from moving
It is dynamic.There are 4 through-holes near the upper end of the reference pressure column, it can be in feed pressure storehouse by measuring pressure medium to allow.When
When pressure acts on pilot flexible sheet, then diaphragm generates upper convex deformation, while coordinating by the traction of reference pressure column, leads
2 pressure conduction columns are caused to generate inside contraction deformation respectively, thus the power that compressing force is applied to MFTSR is become by measuring pressure
Quick resonator, compression force direction are parallel with X-axis (electric axis) of the quick resonator of power.Because of the AT cut types power in elastic limits
The resonant frequency of quick resonator and power in X-axis is acted on into stringent linear functional relation, and the quick quartz resonator of power is resistance to
Compressing force intensity be tensile strength, 24 times of flexural strength, so not only pressure measurement accuracy is high by the QP, anti-overload ability is strong,
And its dynamic range is improved, shorten signal processing time.
Description of the drawings
Fig. 1 is the structural schematic diagram of one chip quartz resonance pressure of the present invention and temperature sensor；
Fig. 2 is the signal of the one chip force-sensing sensor and heat sensitive resonance instrument integral structure described in specific implementation mode four
Figure.
Specific implementation mode
Specific implementation mode one, embodiment is described with reference to Fig. 1, one chip quartz resonance pressure described in present embodiment
And temperature sensor, it includes pressure-compression force transducer, sensor housing 1, one chip heat sensitive resonance instrument 3, one chip power
Dependent sensor 4, reference pressure column 8, pressure interface 9 and pedestal 11；
Pressure-compression force transducer includes two pressure conduction columns 5 and pilot flexible sheet 2；
The lower end of two pressure conduction columns 5 is each attached to the upper surface of pilot flexible sheet 2, and with pilot flexible sheet 2
It is integrally formed part；
Reference pressure column 8 is the hollow tubular structure that top has ladder notch, and the bottom end of reference pressure column 8 connects for pressure
Mouth 9；
The top of reference pressure column 8 is fixed on 2 lower surface of pilot flexible sheet, and positioned at the center of pilot flexible sheet 2；
The side wall of reference pressure column 8 is opened there are four circular through hole 6, median centre pair of four circular through holes 6 along reference pressure column 8
Claim, and four circular through holes 6 close on the top of reference pressure column 8；The lower part of reference pressure column 8 passes through 11 center of pedestal；
Pilot flexible sheet 2 be located in the upside of pedestal 11, and airtight connection structure between pilot flexible sheet 2 and pedestal 11
At Pressure chamber；Sensor housing 1 be located in the upside of pedestal 11, pilot flexible sheet 2 be located at sensor housing 1 and pedestal 11 it
Between；Two pressure conduction columns 5, one chip force-sensing sensor 4 and one chip heat sensitive resonance instrument 3 be respectively positioned on pilot flexible sheet 2 with
Between sensor housing 1；
Two pressure conduction columns 5 are located at the opposite both sides of 8 extended line of reference pressure column；And 8 extended line of reference pressure column with
The distance between two pressure conduction columns 5 are equal；
Every pressure conduction column 5, which is top, has half cylinder for cutting off notch；The both ends of one chip force-sensing sensor 4
It is separately fixed in half cropping notch of two pressure conduction columns 5；One chip heat sensitive resonance instrument 3 is fixed on the quick sensing of one chip power
On device 4；
When Fluid pressure is by the way that the pressure interface 9 of reference pressure column 8 is into Pressure chamber and pressure is higher than an atmospheric pressure
When, pilot flexible sheet 2 generates upper convex deformation, since the fixed traction between reference pressure column 8 and pilot flexible sheet 2 is made
With two pressure conduction columns 5 generate inside contraction deformation, to the quick sensing of one chip power between two pressure conduction columns 5
The power that device 4 applies horizontal direction increases, and the pressure of Pressure chamber is higher, and the power for being applied to horizontal direction is bigger；
When Fluid pressure is by the way that the pressure interface 9 of reference pressure column 8 is into Pressure chamber and pressure is less than an atmospheric pressure
When, the deformation protrusion of pilot flexible sheet 2 becomes smaller, and two pressure conduction columns 5 restore to vertical direction, to two pressure conduction columns
The power for the horizontal direction that one chip force-sensing sensor 4 between 5 applies becomes smaller, and the pressure of Pressure chamber is lower, applies water supply
Square to power it is smaller；
Present embodiment solves " high-precision, low cost, the width of current resonance type quartz crystal crystal pressure and temperature sensor
Range, wide warm area, miniaturization and slimming are not easy to take into account " contradiction.Belong to Fluid pressure, field of temperature measurement.
Its power is quick and heat sensitive resonance instrument uses thickness shear C vibration modes.And the latter's long side is axial and crystal X-axis is at 60 °
Angle.The force-sensing sensor and heat sensitive resonance instrument all use same cut type (AT cut types), and all work in same elastic vibrating
Dynamic model formula (thickness shear C vibration modes).That is " three same "：Same bauerite crystal, same cut type, same elastic vibrating
Dynamic model formula.Its key technology be one chip heat sensitive resonance instrument 3 be by integrated A T cut type heat sensitive resonance instruments constitute, it is quick with power
The position of resonator is as follows：
Its long side it is axial with quartz crystal X-axis at 60 ° of angles, in it is temperature sensitive and for the insensitive orientation of pressure.
In addition, in place of the chip of one chip heat sensitive resonance instrument 3, one chip force-sensing sensor 4 is connected, one machined using etching technics
A little about through-holes of ￠ 1mm are used as stress damping hole, to change the acoustic impedance of two resonator junctions, reduction vibration mode it
Between acoustical coupling, promote inhibition to parasitic modes of vibration, obtain high q-factor and high stability.
The standard resonant frequency of one chip heat sensitive resonance instrument 3 is humorous when pressure is equal to zero with one chip force-sensing sensor 4
Vibration frequency is close, but unequal, and usually the two resonant frequency difference should be less than being equal to 0.4kc.Heat sensitive resonance instrument length direction is taken as
60 ° of direction, length dimension l are deflected with the X-axis of quartz, and width is Z ˊ axial, width dimensions w.Therefore, although it is hot
Quick resonator has also born pressure, but its frequency-pressure change rate is but equal to zero.Its low stress sealing structure and technique
The superior elasticity of quartz crystal, SiC layer, monocrystalline silicon, borosilicate glass and Covar is utilized, conjunction with semiconductors technique is real
It is existing.Although the coefficient of thermal expansion of silicon and quartz material differs, due to the ingenious cushioning effect using amorphous state SiC layer, significantly
Ground reduces the thermal stress of quartz pressure and temperature sensor.
The length direction for setting AT cut type thickness-shear vibration mode Shi Limin resonators described in present embodiment as X-axis,
When the pressure born under reference temperature T0 environment is zero, if when normal voltage V0 additional to the resonator, oscillation criteria
The frequency that output frequency, the frequency variation with the variation of tested pressure size and the temperature with tested pressure medium change
Variable quantity is respectively f01, ⊿ fp1 He ⊿ FT1, thus when temperature is T, and pressure size is P the quick resonator of power output frequency
Formula (1) can be used to indicate for f1：
F1=f01 ﹢ ⊿ fp1 ﹢ ⊿ FT1 (1)
In addition the standard frequency of heat sensitive resonance instrument is set, with the frequency variation of tested pressure change and with by pressure measurement
The frequency variation that power media temperature changes is respectively f02, ⊿ fp2 He ⊿ FT2, You Yu ⊿ fp2=0, therefore is T in temperature,
When pressure size is P, the output frequency of the quick resonator of power, which is f2, to use formula (2) to indicate：
F2=f02 ﹢ ⊿ FT2 (2)
If wushu (1) and formula (2) are subtracted each other,
F1-f2=f01 ﹢ ⊿ fp1 ﹢ ⊿ FT1- (f02 ﹢ ⊿ FT2 (3)
Since the quick resonator of power and heat sensitive resonance instrument are one chip integral structures, and it is placed in the same shell, because
This being capable of Ren Wei ⊿ FT1 ≈ ⊿ FT2, it is clear that
F1-f2=f01 ﹢ ⊿ fp1-f02 (4)
F01 and f02 is known in formula (4), if (f01-f02) is individually subtracted from the both sides of formula (4), after arrangement
It can obtain frequency difference：
δ f=f1-f2- (f01-f02)=⊿ fp1 (5)
If designed power quick resonant frequency f01 and heat sensitive resonance instrument frequency f02 is equal, then formula (5) becomes
δ f=f1-f2=⊿ fp1 (6)
And power quick change rate (slope) the S f of its power-frequency characteristic can be indicated with following formula：
S f=Kf.f2/ (D.n) (7)
In formula, Kf is frequency constant, and f is the quick resonator works frequency of power, and D is the size of the quick resonator endurance of power, and n is
Overtone number.Obviously, the QPS of the quick resonator of AT cut types integral structure one chip power and heat sensitive resonance instrument (MFTSR) can be
The frequency of the quick resonator of power becomes only with the binary function characteristic of tested pressure, temperature variation with tested pressure change
In other words function of a single variable characteristic can be obtained according to the changing value of the output frequency of the quick resonator of power by the size of measuring pressure.
Specific implementation mode two, present embodiment be to described in specific implementation mode one one chip quartz resonance pressure and
The further explanation of temperature sensor, it further includes sealing ring 10, and the sealing ring 10 is set in the cylinder of reference pressure column 8
On, and on reference pressure column 8 between four circular through holes 6 and pedestal 11.
Specific implementation mode three, present embodiment be to described in specific implementation mode one one chip quartz resonance pressure and
The lower part of the further explanation of temperature sensor, reference pressure column 8 is equipped with external screw thread, 8 lower part of reference pressure column and sealing nut
It is threadedly coupled.
Specific implementation mode four, embodiment is described with reference to Fig. 2, and present embodiment is to described in specific implementation mode one
One chip quartz resonance pressure and temperature sensor further explanation, one chip heat sensitive resonance instrument 3 and the quick biography of one chip power
Angle between sensor 4 is θ, and one chip force-sensing sensor 4 is integrated with one chip heat sensitive resonance instrument 3, one chip power
Stress damping hole 13 is equipped between dependent sensor 4 and one chip heat sensitive resonance instrument 3.
The quick resonator of power and heat sensitive resonance instrument described in present embodiment are all the monolithic quartz of thickness shear C vibration modes
Resonator, at normal temperatures, when temperature is identical, the resonant frequency and the quick resonator of power of heat sensitive resonance instrument are when pressure is equal to zero
Resonant frequency differ 0.4kc.
The one chip force-sensing sensor of present embodiment uses AT cut type thickness-shear vibration mode formula resonators, AT cut types thick
It is a kind of quick resonator of power with low resonance loss of classics to spend shear-vibration mode resonator.Theoretically AT cut types sensitivity is humorous
Shake device pressure-sensitivity and resonator wafer thickness it is square inversely proportional.When resonator wafer than it is relatively thin when, the thickness of chip
Degree is smaller, and pressure-sensitivity is higher.However, its sensitivity is also made form by the technique of dissimilar metals material electrodes
And the influence of friction, viscous effect between the medium being in contact with it etc., lead to the decline of sensitivity.Therefore most there are one
Good value problem.In addition, chip is too thin, mechanical strength is also relatively low.The support element of chip and the medium of contact will all cause
The reduction of its Q value.According to G.Sauerbrey viewpoints, it is proposed that new structural high q-factor fundamental frequency AT cut types MFTSR.
The quick resonator of fundamental frequency power and heat sensitive resonance instrument in high q-factor MFTSR are basis and the keys of QPS.The two is all thick
Spend the AT cut types of shear C vibration modes.According to formula (7) it is found that the quick slope of its power and working frequency it is square directly proportional, and with it is general
Sound number is inversely proportional, therefore raising power sensitivity sensitivity should improve working frequency and reduce stress size.Additionally since AT cut type stones
Elastic constant in the X-axis and Z ˊ axis of English differs, and causes acoustic bulk wave different with the transmission on Z ˊ axis in X-axis, so it shakes
The cross-sectional distribution figure ovalisation of dynamic displacement.This will cause energy trap effect to reduce, the reduction of resonator q, and contour vibration is parasitic
The increase of mode intensity.In order to improve the Q values of resonator, preventing edge pattern conversion and inhibit contour vibration parasitic mode
The standing wave that formula is formed also has carried out body modification other than selecting best side ratio (length L/ width W) value to quartz wafer：
Roughing is carried out to MFTSR first with wet etching technique, it is the X axis of quartz to make the quick resonator length direction of its power, long
Degree size is L, and width is Z ˊ axial, width dimensions W.
Specific implementation mode five, present embodiment be to described in specific implementation mode four one chip quartz resonance pressure and
The further explanation of temperature sensor, ranging from 45 °~75 ° of θ.
Specific implementation mode six, present embodiment be to described in specific implementation mode four one chip quartz resonance pressure and
The further explanation of temperature sensor, one chip force-sensing sensor 4 include pressure conduction column, the quick part of power and the quick resonator 12 of power,
The quick resonator of power 12 is fixed on the side of pressure conduction column main body, and the quick part of power is arranged at the both ends of pressure conduction column, and the quick part of power
It is integrally formed part with pressure conduction column.
It is also provided with integrated A T cut types temperature-sensitive resonance identical with the quick resonator key characteristic parameter of power in MFTSR
Device.Its long side is axial and quartz crystal X-axis is at 60 ° of angles, and its standard resonant frequency is equal to zero with the quick resonator of power in pressure
When resonant frequency it is close but unequal.Therefore, although heat sensitive resonance instrument has born pressure, but its frequency-pressure becomes
Rate is but equal to zero.Heat sensitive resonance instrument length direction is taken as deflecting 45 ° -75 ° of direction, optimal deflection side with the X-axis of quartz
To being 60 °, length dimension l, and width is Z ˊ axial, width dimensions w.Then ion etching method pair can be recycled
Body modification has been carried out in place of edge is steep in MFTSR or deficient etching, has been processed into standard oval, transverse direction is X
It is axial, and into a ladder wafer edge surface processing.
As shown in Figure 2.By working hard in the excitation of the quick resonator of power and receiving electrode size and the structure of film, into one
Step strengthens energy trap effect, enhances the inhibition to bending vibration, stretching vibration spurious mode.The quick resonator electrode size of power is 4.0
× 2.5mm, and the electrode size of heat sensitive resonance instrument be 2.39 × 1.25mm, electrode film be 4 layers of structure, be followed successively by Cr layers, Au layers,
Cr layers and Au layers.To which its resonance internal resistance can reduce 100 Ω or so than conventional design, and reduce due to exciting current mistake
The non-linear phenomena generated greatly.In addition, in place of the heat sensitive resonance instrument of MFTSR is connected with the chip of the quick resonator of power, quarter is utilized
Etching technique machined through-hole that some are about ￠ 1mm as stress damping hole, to change the acoustic impedance of two resonator junctions,
The acoustical coupling between vibration mode is reduced, the inhibition to parasitic modes of vibration is promoted, obtains high q-factor and high stability.
Specific implementation mode seven, present embodiment be to described in specific implementation mode six one chip quartz resonance pressure and
The resonant frequency of the further explanation of temperature sensor, the quick resonator of power 12 is 15.592MHz, the resonance of the quick resonator of measuring force
Internal resistance is 25 Ω.
Specific implementation mode eight, present embodiment be to described in specific implementation mode four one chip quartz resonance pressure and
The further explanation of temperature sensor, one chip heat sensitive resonance instrument 3 are realized using integrated A T cut type heat sensitive resonance instruments, integrated
Angle between AT cut types heat sensitive resonance instrument long side axial direction and the quick resonator of power is 60 ° of angles, one chip heat sensitive resonance instrument 3, monolithic
4 connected position of formula force-sensing sensor is etched with the through-hole of multiple a diameter of 1mm as stress damping hole；One chip temperature-sensitive resonance
The standard resonant frequency of device 3 is less than or equal to resonant frequency difference of the one chip force-sensing sensor 4 when pressure is equal to zero
0.4kc。
One chip heat sensitive resonance instrument described in present embodiment be by integrated A T cut type heat sensitive resonance instruments constitute, it with
The position of the quick resonator of power is as follows：Its long side is axial and the quick resonator quartz crystal X-axis of power is at 60 ° of angles, in temperature sensitive
And for the insensitive orientation of pressure；In addition, the chip in one chip heat sensitive resonance instrument, one chip force-sensing sensor is connected it
Place machined through-hole that some are about ￠ 1mm as stress damping hole using etching technics；
Resonance of the standard resonant frequency of one chip heat sensitive resonance instrument with one chip force-sensing sensor when pressure is equal to zero
Frequency is close, but unequal, and usually the two resonant frequency difference should be less than being equal to 0.4kc.Heat sensitive resonance instrument length direction be taken as with
The X-direction of quartz deflects 60 ° of direction, length dimension l, and width is Z ˊ axial, width dimensions w.
Specific implementation mode nine, present embodiment are one chip quartz resonance pressure and the temperature described in specific implementation mode one
Spend sensor one chip force-sensing sensor process, this method the specific steps are：
Step 1: making 2 plate shapes using photoetching and anisotropic etching legal system is similar to semicircular monocrystal silicon structure part；
Step 2: it is 80 μm or so non-so that monocrystal silicon structure part upper surface and side is covered with thickness using semiconductor technology
Crystalline state SiC layer；
Step 3: cladding thickness is less than 10 μm of SiO in amorphous state SiC layer using heteroepitaxy2Layer；
Step 4: making under normal temperature condition to be covered with SiO using oxygen plasma surface activation method2The monocrystal silicon structure part of layer
Being integrally formed power sensing structure part is bonded with the quick resonator of power；
Step 5: using electrostatic sealing-in method in the equal sealing-in semicircle borosilicate glass in integrated force sensing structure part both ends
Piece, then so that borosilicate glass piece is sintered together with pressure conduction column with cryogenic glass powder, it is formed rigidly connected unstressed
Sealing-in body.
The key of high-precision QPS of the present invention is the quick resonator of power and pilot elastomer, pressure --- force transformation
The unstressed sealing-in of device.Because pilot elastomer also brings adverse consequences while pilot：1) due to the elasticity of unlike material
Constant is unequal, therefore will cause the relative displacement between the quick resonator of power and pilot elastomer after stress, especially quartzy
The elastic constant of crystal has anisotropy, it is difficult to be matched with conventional elastomers.In addition, acoustic bulk wave is in the quick resonator of AT cut type power
X-axis and Z ˊ axial directions on transmission differ, the section of vibration displacement distribution is ellipse, therefore unfavorable sealing-in will subtract
Few Q values, reduce its resolution ratio and stability.
The quick resonator of power and pilot elastomer or pressure --- between force transducer be not suitable for sealing-in also and can bring creep,
Sluggishness influences its response characteristic.
Due to the thermal stress that the difference of the coefficient of thermal expansion of unlike material generates, and current any adhesive (including it is various
Including cryogenic glass powder) be nearly all isotropic material, at all cannot with the quick resonator of anisotropic Quartz Force
Match, therefore conventional process for sealing will all bring thermal stress, and the accuracy of QPS, sensitivity is caused significantly to reduce.
Pressure passes through pilot elastomer, pressure --- and force transducer is transmitted to the quick resonator of power again, it is clear that the lag of power is imitated
It answers, influences its response characteristic, especially its dynamic characteristic.
New construction QPS's is only made of two kinds of materials, therefore, it is necessary to carry out unstressed sealing-in be only pressure conduction column with
The quick resonator engagement place of power of MFTSR.Selection coefficient of thermal expansion is recycled close to the single crystal silicon material of quartz crystal first
Following being made into one of technique structural members.Its technique is as follows：Make 2 using photoetching and anisotropic etching legal system and is similar to semicircle
Then the monocrystal silicon structure part of shape makes its upper surface and side form the amorphous state that thickness is 80 μm or so using semiconductor technology
SiC layer, using heteroepitaxy, growth thickness is less than 10 μm of SiO on the sic layer2Layer recycles oxygen plasma surface-active
Change method makes it be bonded being integrally formed power sensing structure part with the quick resonator of power under normal temperature condition.Finally existed using electrostatic sealing-in method
Integrated force sensing structure part both ends sealing-in upper half circle borosilicate glass piece, then make they and Covar with cryogenic glass powder
Pressure conduction column be sintered together, form rigidly connected unstressed sealing-in body.
The purpose for making SiC layer is to grow the big SiO of a layer lattice constant difference on the monosilicon2Epitaxially deposited layer, with
Just unstressed sealing-in is realized with the semicircular end lower surface of the quick resonator of power.The excellent spring of the amorphous state silicon carbide layer, and
It can play the role of buffer layer.It therefore, can although the coefficient of thermal expansion of silicon and quartz material differs when variation of ambient temperature
It is the absorption due to the buffer layer, thermal stress but very little can ignore the harmful effect of QPS.In addition, because amorphous
The combination of state silicon carbide layer and monocrystalline silicon, quartz crystal materials, borosilicate glass, Covar is a kind of rigid face knot
It closes, so the bond strength between them is big, fully meets accurate, high stable QPS requirements.
Using ANSYS Finite Element Models (FEM) software to the QPS shells, pilot flexible sheet, pressure conduction of the design
The Digital Simulation that the pressure-- force transformation component such as column, reference pressure column is strained.Feng meter Sai Si of the result of digital simulation
Elastic strain (von Mises elastic strain).
In addition at ambient temperature, measured using HP4149A type Network Analyzers：The resonant frequency of the quick resonator of power is
The resonance internal resistance of 15.592MHz, the quick resonator of measuring force are 25 Ω or so.The resonant frequency of heat sensitive resonance instrument is 15.694MHz,
The resonance internal resistance of heat sensitive resonance instrument is 36 Ω or so, and Q values are up to 15,000~16,000.They are all quicker than the power of conventional design
Resonator, the resonance internal resistance of heat sensitive resonance instrument are much smaller.In addition, the accurate survey with HP4149A types Network Analyzer to resonator
Amount shows that quick power, frequency spectrum of heat sensitive resonance instrument and spurious signal control degree are highly desirable：In normalized frequency (0.99~1.01 model
In enclosing) degree of suppression of its parasitic signal is up to 30~35db.Obviously it lays a good foundation for the high-resolution and high stable of QPS.
This is because the distribution of excitation, receiving electrode pattern adaptation thickness shear vibration amplitude in crystalline axis direction used by resonator
Figure, and matched with the modification body of its resonator surface, so as to cause the quick resonator of power, heat sensitive resonance instrument Q values, parasitic signal
The significantly promotion of degree of suppression.
Suitable peripheral circuit, digital display meter and temperature compensation, line benefit software are finally reassembled, First class standard piston pressure is utilized
Power meter, Grade I standard Platinum resistance thermometer, U.S.'s fluke thermostatic water bath etc. have carried out static demarcating and stabilization to typical sample
Property examine, typical technology index such as table 1：
1 MFTSR pressure-temperature sensor the key technical indexes tables of table
The present invention solve quartz crystal sensor industry it is long-standing " high-precision, wide-range, wide warm area, low cost,
Miniaturization and slimming are not easy the contradiction taken into account, and tentatively solve certain problems.But due to by time, human and material resources
Limitation, theory study also seem pale, and experiment is also relatively rough, and technique is groped also insufficient, deep work and needed with laggard
Row.
The advantageous effect that the present invention obtains：
The quartz resonance pressure of the present invention and the core component of temperature sensor are by being produced on same bauerite on piece
1) it, is made of force-sensing sensor and heat sensitive resonance instrument.Its distinctive feature is the force-sensing sensor and heat sensitive resonance instrument
Same cut type (AT cut types) is all used, and all works in same elastic vibration pattern (thickness shear C vibration modes).From
And realize " three same "：Same bauerite crystal, same cut type, same elastic vibration pattern.Its key technology is
Integrated A T cut types heat sensitive resonance instrument and the position of the quick resonator of power are set：Its long side it is axial with quartz crystal X-axis at 60 ° of angles,
In it is temperature sensitive and for the insensitive orientation of pressure.In addition, its standard resonant frequency and the quick resonator of power are in pressure etc.
Resonant frequency when zero is close, but unequal, and usually the two resonant frequency difference should be less than being equal to 0.4kc.Heat sensitive resonance instrument is long
Degree direction is taken as deflecting 60 ° of direction, length dimension l with the X-axis of quartz, and width is Z ˊ axial, width dimensions w.
Therefore, although heat sensitive resonance instrument has also born pressure, but its frequency-pressure change rate is equal to zero.
2), unstressed sealing technology be influence QPS accuracy, long-time stability and temperature stability core process, be
The maximum road blocking tiger for further promoting its accuracy, improving the technical indicators such as its stability, but current home and abroad is not yet
Find the seal, sealing materials exactly matched with quartzy force-sensing sensor 4 and technique.
The emphasis of the present invention is visited not on finding the seal, sealing materials exactly matched with quartzy force-sensing sensor 4
A kind of new way of rope：Quartzy force-sensing sensor and its wait for having made one layer of laminated film-thickness between sealing of metal material
For 80 μm or so of amorphous state SiC layer, heteroepitaxy cladding thickness in amorphous state SiC layer is recycled to be less than 10 μm of SiO2
Layer.The coefficient of elasticity and temperature coefficient of the composite film material are both not equal to quartz material, are also not equal to and wait for sealing of metal material,
But relatively, the purpose for making SiC layer is to grow the big SiO of a layer lattice constant difference on the monosilicon2Hetero-epitaxy
Layer, to realize unstressed sealing-in with the semicircular end lower surface of the quick resonator of power.The elasticity of the amorphous state silicon carbide layer is excellent
It is good, and buffer layer can be played the role of.Therefore when variation of ambient temperature, although the coefficient of thermal expansion of silicon and quartz material is not
Deng, but due to the absorption of the buffer layer, the harmful effect of thermal stress can be ignored.Therefore, although " micro-
See " on quartz material and wait for that sealing of metal material not fully matches, however in " macroscopic view ", in certain warm area range
It does not show but inside to reduce resonance type quartz crystal crystal pressure transducer resolution ratio, the thermal stress of accuracy and temperature stability.
In other words, in " macroscopic view ", realize " unstressed sealing-in " within the scope of certain warm area, to solve perplex at present it is high-precision
Close, high stable a technical barrier for disturbing resonance type quartz crystal crystal pressure transducer industry.In addition, because amorphous carbon SiClx
The combination of layer and monocrystalline silicon, quartz crystal materials, borosilicate glass, Covar is a kind of rigid face combination, so it
Between bond strength it is big, fully meet accurate, high stable QPS requirements.
3), the invention discloses it is a kind of by measuring pressure become compressing force be applied to the quick resonator of power novelty and practicality
The method of device and one chip configuration quartzy force-sensing sensor 4 and heat sensitive resonance instrument 3.
Become compressing force to be applied to the power of the quick resonator of power being a kind of compressing force by measuring pressure.The compression force direction and power are quick
The X-axis (electric axis) of resonator is parallel.So as to cause one chip quartz resonance pressure and temperature sensor, not only pressure measurement accuracy is high,
Anti-overload ability is strong, and wide dynamic range, and signal processing time is short.
4), the quick resonator of fundamental frequency power and heat sensitive resonance instrument of high q-factor are basis and the keys of QPS.The two is all that thickness is cut
Become the AT cut types of C vibration modes.According to formula (7) it is found that the quick slope of its power and working frequency it is square directly proportional, and with overtone
Number is inversely proportional, therefore raising power sensitivity sensitivity should improve working frequency and reduce stress size.Additionally since the X of AT cut type quartz
Elastic constant on axis and Z ˊ axis differs, and causes acoustic bulk wave different with the transmission on Z ˊ axis in X-axis, so its vibration displacement
Cross-sectional distribution figure ovalisation.This will cause energy trap effect to reduce, the reduction of resonator q, and contour vibration spurious mode is strong
The increase of degree.In order to improve the Q values of resonator, prevent edge pattern conversion and contour vibration spurious mode be inhibited to be formed
Standing wave body modification also has been carried out to quartz wafer other than selecting best side ratio (length L/ width W) value：It is sharp first
Roughing is carried out to MFTSR with wet etching technique, it is the X axis of quartz, length dimension to make the quick resonator length direction of its power
For L, width is Z ˊ axial, width dimensions W.
Claims (7)
1. one chip quartz resonance pressure and temperature sensor, it is characterized in that：It includes pressure-compression force transducer, sensor
Shell (1), one chip heat sensitive resonance instrument (3), one chip force-sensing sensor (4), reference pressure column (8), pressure interface (9) and bottom
Seat (11)；
Pressure-compression force transducer includes two pressure conduction columns (5) and pilot flexible sheet (2)；
The lower end of two pressure conduction columns (5) is each attached to the upper surface of pilot flexible sheet (2), and with pilot flexible sheet
(2) it is integrally formed part；Reference pressure column (8) is the hollow tubular structure that top has ladder notch, the bottom of reference pressure column (8)
End is pressure interface (9)；
Pilot flexible sheet (2) lower surface is fixed at the top of reference pressure column (8), and in pilot flexible sheet (2)
The heart；The side wall of reference pressure column (8) is opened there are four circular through hole (6), and four circular through holes (6) are along reference pressure column (8)
Median centre it is symmetrical, and four circular through holes (6) close on the top of reference pressure column (8)；It wears the lower part of reference pressure column (8)
Cross pedestal (11) center；
Pilot flexible sheet (2) be located in the upside of pedestal (11), and closed company between pilot flexible sheet (2) and pedestal (11)
Connect composition Pressure chamber；Sensor housing (1) be located in the upside of pedestal (11), and pilot flexible sheet (2) is located at sensor housing
(1) between pedestal (11)；Two pressure conduction columns (5), one chip force-sensing sensor (4) and one chip heat sensitive resonance instrument (3)
It is respectively positioned between pilot flexible sheet (2) and sensor housing (1)；The one chip heat sensitive resonance instrument (3) is using integration
AT cut type heat sensitive resonance instruments are realized, between integrated A T cut types heat sensitive resonance instrument long side axial direction and the quick resonator X-direction of power
Angle is 60 ° of angles, and one chip heat sensitive resonance instrument (3), one chip force-sensing sensor (4) connecting place are etched with multiple a diameter of 1mm
Through-hole as stress damping hole；The standard resonant frequency of one chip heat sensitive resonance instrument (3) exists with one chip force-sensing sensor (4)
Resonant frequency difference when pressure is equal to zero is less than or equal to 0.4kc；
Two pressure conduction columns (5) are located at the opposite both sides of reference pressure column (8) extended line；And reference pressure column (8) extended line
The distance between two pressure conduction columns (5) are equal；
Every pressure conduction column (5), which is top, has half cylinder for cutting off notch；The both ends of one chip force-sensing sensor (4)
It is separately fixed in half cropping notch of two pressure conduction columns (5)；It is quick that one chip heat sensitive resonance instrument (3) is fixed on one chip power
On sensor (4)；
When Fluid pressure is by the way that the pressure interface (9) of reference pressure column (8) is into Pressure chamber and pressure is higher than an atmospheric pressure
When, convex deformation in pilot flexible sheet (2) generation, due to the fixation between reference pressure column (8) and pilot flexible sheet (2)
Draw, two pressure conduction columns (5) generate inside contraction deformation, the monolithic between two pressure conduction columns (5)
The power that formula force-sensing sensor (4) applies horizontal direction increases, and the pressure of Pressure chamber is higher, and the power for being applied to horizontal direction is got over
Greatly；
When Fluid pressure is by the way that the pressure interface (9) of reference pressure column (8) is into Pressure chamber and pressure is less than an atmospheric pressure
When, the deformation protrusion of pilot flexible sheet (2) becomes smaller, and two pressure conduction columns (5) are restored to vertical direction, is passed to two pressure
The power for the horizontal direction that one chip force-sensing sensor (4) between guide post (5) applies becomes smaller, and the pressure of Pressure chamber is lower,
The power for being applied to horizontal direction is smaller.
2. one chip quartz resonance pressure according to claim 1 and temperature sensor, it is characterized in that：It further includes sealing
It encloses (10), the sealing ring (10) is set on the cylinder of reference pressure column (8), and is located at upper four circles of reference pressure column (8)
Between shape through-hole (6) and pedestal (11).
3. one chip quartz resonance pressure according to claim 1 and temperature sensor, it is characterized in that：Reference pressure column
(8) lower part is equipped with external screw thread, and reference pressure column (8) lower part is threadedly coupled with sealing nut.
4. one chip quartz resonance pressure according to claim 1 and temperature sensor, it is characterized in that：The quick biography of one chip power
Sensor (4) is integrated with one chip heat sensitive resonance instrument (3).
5. one chip quartz resonance pressure according to claim 4 and temperature sensor, it is characterized in that：The quick biography of one chip power
Sensor (4) includes pressure conduction column, the quick part of power and the quick resonator of power (12), and the quick resonator of power (12) is fixed on pressure conduction column master
The side of body, the quick part of power is arranged at the both ends of pressure conduction column, and the quick part of power is integrally formed part with pressure conduction column.
6. one chip quartz resonance pressure according to claim 5 and temperature sensor, it is characterized in that：The quick resonator of power
(12) resonant frequency is 15.592MHz, and the resonance internal resistance of the quick resonator of measuring force is 25 Ω.
7. the middle one chip force-sensing sensor of one chip quartz resonance pressure according to claim 6 and temperature sensor
Process, it is characterised in that；This method the specific steps are：
Step 1: making 2 plate shapes using photoetching and anisotropic etching legal system is similar to semicircular monocrystal silicon structure part；
Step 2: making monocrystal silicon structure part upper surface and side be covered with the amorphous state that thickness is 80 μm or so using semiconductor technology
SiC layer；
Step 3: cladding thickness is less than 10 μm of SiO in amorphous state SiC layer using heteroepitaxy2Layer；
Step 4: making under normal temperature condition to be covered with SiO using oxygen plasma surface activation method2The monocrystal silicon structure part and power of layer
Quick resonator is bonded being integrally formed power sensing structure part；
Step 5: using electrostatic sealing-in method in the equal sealing-in semicircle borosilicate glass piece in integrated force sensing structure part both ends, then
So that borosilicate glass piece is sintered together with pressure conduction column with cryogenic glass powder, forms rigidly connected unstressed sealing-in
Body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610638733.7A CN106323511B (en) | 2016-08-05 | 2016-08-05 | One chip quartz resonance pressure and temperature sensor and its process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610638733.7A CN106323511B (en) | 2016-08-05 | 2016-08-05 | One chip quartz resonance pressure and temperature sensor and its process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106323511A CN106323511A (en) | 2017-01-11 |
| CN106323511B true CN106323511B (en) | 2018-10-23 |
Family
ID=57739769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610638733.7A Expired - Fee Related CN106323511B (en) | 2016-08-05 | 2016-08-05 | One chip quartz resonance pressure and temperature sensor and its process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106323511B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107806947A (en) * | 2017-11-09 | 2018-03-16 | 中国电子科技集团公司第四十九研究所 | High temperature pressure temperature one compound sensor |
| CN109238518B (en) * | 2018-09-17 | 2021-11-05 | 胡耿 | Micro-polar distance capacitance type force-sensitive sensor and manufacturing method thereof |
| CN109467041A (en) * | 2018-11-07 | 2019-03-15 | 中国电子科技集团公司第二十六研究所 | A kind of high stability MEMS resonant device |
| CN109399557B (en) * | 2018-11-07 | 2020-05-05 | 中国电子科技集团公司第二十六研究所 | Manufacturing method of high-stability MEMS (micro-electromechanical systems) resonance device |
| CN109883565B (en) * | 2019-03-13 | 2020-10-13 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance type temperature sensitive chip based on SOI |
| CN115655505B (en) * | 2022-12-29 | 2023-04-28 | 常州奇军苑传感技术有限公司 | Quartz tuning fork temperature sensor with torsional mode |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08136381A (en) * | 1994-11-11 | 1996-05-31 | Pacific Ind Co Ltd | Pressure sensor |
| CN101354302A (en) * | 2008-09-18 | 2009-01-28 | 上海交通大学 | Sonic surface wave pressure sensor using composite mold |
| CN101551283A (en) * | 2009-05-14 | 2009-10-07 | 上海交通大学 | Surface transverse wave pressure and temperature sensor |
| CN102439407A (en) * | 2009-05-21 | 2012-05-02 | 通用电气基础设施传感公司 | Sensor |
| WO2014096784A1 (en) * | 2012-12-20 | 2014-06-26 | Oxsensis Ltd | Mechanical resonator sensor |
| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
-
2016
- 2016-08-05 CN CN201610638733.7A patent/CN106323511B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08136381A (en) * | 1994-11-11 | 1996-05-31 | Pacific Ind Co Ltd | Pressure sensor |
| CN101354302A (en) * | 2008-09-18 | 2009-01-28 | 上海交通大学 | Sonic surface wave pressure sensor using composite mold |
| CN101551283A (en) * | 2009-05-14 | 2009-10-07 | 上海交通大学 | Surface transverse wave pressure and temperature sensor |
| CN102439407A (en) * | 2009-05-21 | 2012-05-02 | 通用电气基础设施传感公司 | Sensor |
| WO2014096784A1 (en) * | 2012-12-20 | 2014-06-26 | Oxsensis Ltd | Mechanical resonator sensor |
| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
Non-Patent Citations (2)
| Title |
|---|
| Review of Thickness-Shear Mode Quartz Resonator Sensors for Temperature and Pressure;EERNISSE, Errol P. et al;《IEEE SENSORS JOURANL》;20010630;第1卷(第1期);第79-87页 * |
| 石英晶体谐振式绝对压力传感器研制;潘安宝 等;《传感器与微系统》;20081231;第27卷(第1期);第85-86,89页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106323511A (en) | 2017-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106323511B (en) | One chip quartz resonance pressure and temperature sensor and its process | |
| CA1194707A (en) | Piezoelectric transducer notably for pressure measurement | |
| Shin et al. | Environmentally robust differential resonant accelerometer in a wafer-scale encapsulation process | |
| Langdon | Resonator sensors-a review | |
| Niu et al. | Design optimization of high pressure and high temperature piezoresistive pressure sensor for high sensitivity | |
| US4562375A (en) | Piezoelectric transducer, notably for pressure measurement | |
| CN110501098B (en) | High-sensitivity micro-pressure sensor based on double-pressure membrane and weak coupling resonance system | |
| GB2087558A (en) | Pressure transducer of vibrating element type | |
| JP4973718B2 (en) | Pressure detection unit and pressure sensor | |
| US8850896B2 (en) | Physical quantity detector | |
| CN110017922A (en) | A kind of probe-type high-precision force sensor based on full quartz resonator | |
| CN106895803A (en) | A kind of device and methods influenceed using two SAW resonator separation temperatures | |
| CN107560787A (en) | Quartzy vacuum transducer with electrodeless resonant tuning fork | |
| Dou et al. | High-temperature high-sensitivity AlN-on-SOI Lamb wave resonant strain sensor | |
| Kälvesten et al. | Small piezoresistive silicon microphones specially designed for the characterization of turbulent gas flows | |
| US20060157133A1 (en) | Combustion transducer apparatus employing pressure restriction means | |
| CN109883580A (en) | A kind of complete quartzy differential type resonance pressure sensor chip | |
| Yu et al. | A resonant high-pressure microsensor based on the vertical dual resonators with oil-filled isolated structure | |
| Wang et al. | Effect of transverse force on the performance of quartz resonator force sensors | |
| Hofler | Accurate acoustic power measurements with a high‐intensity driver | |
| Ren et al. | A composite structure pressure sensor based on quartz DETF resonator | |
| US11226249B2 (en) | Pressure measuring device having a footprint of a first joint area of a support body | |
| Dong et al. | Self-temperature-testing of the quartz resonant force sensor | |
| Hu et al. | Quartz resonant pressure sensor based on bow-inspired rationally designed device configuration | |
| CN105388323A (en) | resonant sensor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181023 Termination date: 20200805 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |