CN109883565B - Silicon micro-resonance type temperature sensitive chip based on SOI - Google Patents
Silicon micro-resonance type temperature sensitive chip based on SOI Download PDFInfo
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Abstract
A silicon micro-resonance type temperature sensitive chip based on SOI relates to a resonator. The invention improves the traditional measurement precision of platinum resistor and the like from 0.15 ℃ to 0.05 ℃, and achieves the purpose of improving the temperature measurement precision. The resonator comprises a resonator body, a resonance layer (2-1), a silicon-silicon bonding layer (2-2) and a resonance layer fixing seat (2-3), wherein the resonance layer fixing seat (2-3) is of a silicon structure, the resonance layer fixing seat (2-3) and a first anchor block (701), a second anchor block (702) and a spare electrode passage (502) of the resonator body in the resonance layer (2-1) form a whole, and the silicon-silicon bonding layer (2-2) is used for bonding the silicon-silicon bonding layer fixing seat (2-3) and the first anchor block (701), the second anchor block (702) and the spare electrode passage (502) in the resonance layer (2-1) together, so that the resonator forms a rigid structure with the whole structure. The invention is used for temperature sensitive test.
Description
Technical Field
The invention relates to an MEMS resonant pressure sensor, in particular to a silicon micro-resonant temperature sensitive chip based on SOI.
Background
The precision of the traditional temperature sensor such as a platinum resistor and a copper resistor sensor can reach 0.15 ℃ at most, and the precision can not be further improved; although the optical fiber temperature sensor has higher temperature measurement precision, the cost is higher, and the optical fiber is easy to lose.
The resonant sensor is used as a first-generation high-precision sensor, the resonant pressure sensor and the resonant temperature sensor are used as main bodies, the measurement of multiple physical parameters is realized, and the sensor has the characteristics of high precision, microstructure, frequency output and the like; the resonant sensor has the advantages of small structure, low power consumption, fast response, good repeatability, high stability and reliability, wide frequency band, high signal-to-noise ratio, impact resistance, strong anti-interference capability, easy integration, mass production, low cost and the like, and is widely concerned and intensively developed in various countries in the world.
The theoretical precision of the temperature sensor based on the resonance principle can reach 0.05 ℃, the accurate temperature measurement can be realized, and the development direction of the high-precision temperature sensor is provided. The traditional measuring methods of platinum resistors, copper resistors and the like are used for measuring temperature by utilizing the characteristic that the resistance value of a conductor changes along with the temperature change and has a certain functional relation, and the accuracy is up to 0.15 ℃ due to the limitation of the material of the conductor. There is a problem that the accuracy of the temperature sensor is poor.
Disclosure of Invention
The invention provides a silicon micro-resonance type temperature sensitive chip based on SOI (silicon on insulator) in order to achieve the purpose of improving the temperature measurement precision, and improve the 0.15 ℃ of the traditional measurement precision of the existing platinum resistor and the like to 0.05 ℃.
The invention has the technical scheme that the silicon micro-resonance type temperature sensitive chip based on SOI comprises a resonator body, a resonance layer, a silicon-silicon bonding layer and a resonance layer fixing seat, wherein the resonance layer fixing seat is of a silicon structure, the resonance layer fixing seat, a resonance layer, a first anchor block, a second anchor block and a spare electrode passage of the resonator body form a whole, and the silicon and the first anchor block, the second anchor block and the spare electrode passage in the resonance layer fixing seat and the resonance layer are bonded together through the silicon-silicon bonding layer to enable the resonator to form an integral structure rigid structure;
the resonator body comprises a first lead-out electrode, a second lead-out electrode, a third lead-out electrode, a fourth lead-out electrode, a first driving electrode, a second driving electrode, a third driving electrode, a spare electrode, a first anchor block, a second anchor block, a lower transverse tension beam, an upper resonance unit, a lower resonance unit, a first connecting block, a second connecting block, a third connecting block, a fourth connecting block, a driving electrode passage, a spare electrode passage, a first connecting beam, a fourth connecting beam, a fifth connecting beam, a seventh connecting beam, a second connecting beam, a third connecting beam, a sixth connecting beam and an eighth connecting beam;
the first leading-out electrode, the third driving electrode and the fourth leading-out electrode are positioned in the same row, the second leading-out electrode, the second driving electrode and the third leading-out electrode are positioned in the same row, the first anchor block and the second anchor block are arranged between the second driving electrode and the third driving electrode, the first anchor block and the second anchor block are respectively connected through a lower transverse tension beam and an upper transverse tension beam, the lower transverse tension beam and the upper transverse tension beam are respectively connected with the second driving electrode and the third driving electrode through an upper resonance unit and a lower resonance unit, the first connecting block and the second connecting block are connected and then arranged at the outer side of the first anchor block, the third connecting block and the fourth connecting block are connected and then arranged at the outer side of the second anchor block, the first driving electrode is connected with the first connecting block and the second connecting block through a driving electrode passage, and the standby electrode is connected with the third connecting block and the fourth connecting block through a standby electrode passage, the first extraction electrode is connected with the upper resonance unit through the first connecting beam, the second extraction electrode is connected with the lower resonance unit through the fourth connecting beam, the third extraction electrode is connected with the lower resonance unit through the fifth connecting beam, the fourth extraction electrode is connected with the upper resonance unit through the eighth connecting beam, the first connecting block is connected with the upper resonance unit through the second connecting beam, the second connecting block is connected with the lower resonance unit through the third connecting beam, the third connecting block is connected with the lower resonance unit through the sixth connecting beam, and the fourth connecting block is connected with the upper resonance unit through the seventh connecting beam.
Furthermore, a first anchor block hole and a second anchor block hole are formed in the left sides of the intersection of the lower transverse tie beam and the upper transverse tie beam with the first anchor block.
Furthermore, a third anchor block hole and a fourth anchor block hole are formed in the intersection of the lower transverse tie beam and the upper transverse tie beam and the second anchor block.
Furthermore, the lower resonance unit comprises a lower sensitive comb electrode, a first connecting support beam, a first stabilizing beam, a lower mass block, a second stabilizing beam and a second connecting support beam, the lower sensitive comb electrode is arranged on the second driving electrode to form an array capacitor, and the first connecting support beam connects the lower sensitive comb electrode, a third connecting beam and a fourth connecting beam into a whole to form a stable left lower triangular support; the second connecting support beam connects the lower sensitive comb electrode with the fifth connecting beam and the sixth connecting beam into a whole to form a stable right lower triangular support; a lower mass block is arranged between the left lower triangular support and the right lower triangular support and is connected with the lower sensitive comb tooth electrode through a first stabilizing beam and a second stabilizing beam on the left side and the right side; a second resonance hole is arranged between the upper end of the lower mass block and the upper cross tie beam, and a first resonance hole is arranged between the lower end of the lower mass block and the lower sensitive comb tooth electrode.
Further, the width of the second resonance hole is 2 times the width of the first resonance hole.
Furthermore, the upper resonance unit comprises an upper sensitive comb electrode, a fourth connecting support beam, a fourth stabilizing beam, an upper mass block, a third stabilizing beam and a third connecting support beam, the upper sensitive comb electrode is arranged on the third driving electrode to form an array capacitor, and the fourth connecting support beam connects the upper sensitive comb electrode with the first connecting beam and the second connecting beam into a whole to form a stable upper left triangular support; the third connecting support beam connects the upper sensitive comb electrode with the seventh connecting beam and the eighth connecting beam into a whole to form a stable upper right triangular support; an upper mass block is arranged between the upper left triangular support and the upper right triangular support and is connected with the upper sensitive comb tooth electrode through a third stabilizing beam and a fourth stabilizing beam on the left side and the right side; a third resonance hole is arranged between the upper end of the upper mass block and the upper sensitive comb tooth electrode, and a fourth resonance hole is arranged between the lower end of the upper mass block and the upper transverse drawing beam.
Further, the width of the fourth resonance hole is 2 times the width of the third resonance hole.
Compared with the prior art, the invention has the following improvement effects:
1. the invention provides excitation by static electricity, a first driving electrode 401 is a positive electrode or a negative electrode of the static excitation, a second driving electrode 402 and a third driving electrode 403 are opposite in polarity to the first driving electrode, a lower sensitive comb-tooth electrode 801 and an upper sensitive comb-tooth electrode 802 respectively matched with the first driving electrode generate static electricity, a lower mass block 131 and an upper mass block 132 vibrate under the driving of the static excitation, when the variation frequency of the static excitation is coupled with the natural frequency of a lower resonance unit consisting of a first connecting supporting beam 901, a second connecting supporting beam 902, a first stabilizing beam 111, a first resonance hole 121, a lower mass block 131, a second resonance hole 122, a second stabilizing beam 112 and a transverse pulling beam 141 and an upper resonance unit consisting of a third connecting supporting beam 903, a fourth connecting supporting beam 904, a third stabilizing beam 113, a third resonance hole 123, an upper mass block 132, a fourth resonance hole 124, a fourth stabilizing beam 114 and a transverse pulling beam 142, the resonance phenomenon occurs, the amplitude change of the upper resonance unit and the lower resonance unit is obvious, the first-order vibration mode of the resonance units is the same-direction vibration in the direction parallel to the short side of the rectangle, the second-order vibration mode is the opposite-direction vibration in the direction parallel to the short side of the rectangle, and the vibration mode is the required test vibration mode.
2. Under the driving of the electrostatic excitation, when the natural frequencies of the two mass blocks and the resonant unit on the resonator are coupled, a resonance phenomenon occurs; when the environmental temperature changes, the natural frequency of the resonator changes due to the change of the thermal expansion coefficient of the silicon, the temperature measurement is realized by detecting the change of the resonant frequency, the precision of the measurement principle depends on the change of the resonant frequency, the change can realize accurate measurement, and the aim of increasing the temperature measurement precision to 0.05 ℃ is fulfilled. Meanwhile, the resonance units in the resonance fixing seats 2-3 and the resonance layer 2-1 form an integral rigid structure through silicon-silicon bonding 2-2, so that the influence of external environmental factors on the resonator, such as pressure influence, can be avoided, and the product precision is improved to a great extent.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic cross-sectional structure of the present invention.
Detailed Description
The first embodiment is as follows: the present embodiment is described with reference to fig. 1 and fig. 2, a silicon micro-resonance type temperature-sensitive chip based on SOI, which includes a resonator body, a resonance layer 2-1, a silicon-silicon bonding layer 2-2 and a resonance layer fixing base 2-3, wherein the resonance layer fixing base 2-3 is a silicon structure, the resonance layer fixing base 2-3 is integrated with a first anchor block 701, a second anchor block 702 and a spare electrode via 502 of the resonator body in the resonance layer 2-1, and the silicon-silicon bonding layer 2-2 bonds the silicon-resonance layer fixing base 2-3 with the first anchor block 701, the second anchor block 702 and the spare electrode via 502 in the resonance layer 2-1, so that the resonator forms an integrated rigid structure;
the resonator body comprises a first extraction electrode 101, a second extraction electrode 102, a third extraction electrode 103, a fourth extraction electrode 104, a first driving electrode 401, a second driving electrode 402, a third driving electrode 403, a spare electrode 15, a first anchor block 701, a second anchor block 702, a lower transverse tension beam 142, an upper transverse tension beam 141, an upper resonance unit, a lower resonance unit, a first connection block 301, a second connection block 302, a third connection block 303, a fourth connection block 304, a driving electrode passage 501, a spare electrode passage 502, a first connection beam 201, a fourth connection beam 204, a fifth connection beam 205, a seventh connection beam 207, a second connection beam 202, a third connection beam 203, a sixth connection beam 206 and an eighth connection beam 208;
the first extraction electrode 101, the third driving electrode 403 and the fourth extraction electrode 104 are located in the same row, the second extraction electrode 102, the second driving electrode 402 and the third extraction electrode 103 are located in the same row, the first anchor block 701 and the second anchor block 702 are installed between the second driving electrode 402 and the third driving electrode 403, the first anchor block 701 and the second anchor block 702 are connected through the lower cross beam 142 and the upper cross beam 141 respectively, the lower cross beam 142 and the upper cross beam 141 are connected through the upper resonant unit and the lower resonant unit respectively with the second driving electrode 402 and the third driving electrode 403 respectively, the first connection block 301 and the second connection block 302 are connected and installed outside the first anchor block 701, the third connection block 303 and the fourth connection block 304 are connected and installed outside the second anchor block 702 respectively, the first driving electrode 401 is connected through the driving electrode via 501 with the first connection block 301 and the second connection block 302, the spare electrode 15 is connected with a third connecting block 303 and a fourth connecting block 304 through a spare electrode passage 502, the first extraction electrode 101 is connected with the upper resonance unit through a first connecting beam 201, the second extraction electrode 102 is connected with the lower resonance unit through a fourth connecting beam 204, the third extraction electrode 103 is connected with the lower resonance unit through a fifth connecting beam 205, the fourth extraction electrode 104 is connected with the upper resonance unit through an eighth connecting beam 208, the first connecting block 301 is connected with the upper resonance unit through a second connecting beam 202, the second connecting block 302 is connected with the lower resonance unit through a third connecting beam 203, the third connecting block 303 is connected with the lower resonance unit through a sixth connecting beam 206, and the fourth connecting block 304 is connected with the upper resonance unit through a seventh connecting beam 207.
The resonator of the present embodiment is rectangular as a whole, and has an axisymmetric pattern with respect to the center line of the long side and the short side of the rectangle.
In the present embodiment, the first connecting beam 201 and the second connecting beam 202 on the left side of the sensing comb electrode 802 are not on the same straight line, and the first connecting beam 201 is located on the left side relative to the second connecting beam 202. The seventh connecting beam 207 and the eighth connecting beam 208 on the right side of the sensitive comb electrode 802 are not on the same straight line, and the eighth connecting beam 208 is close to the right relative to the seventh connecting beam 207; the third connecting beam 203 and the fourth connecting beam 204 on the left side of the sensitive comb electrode 801 are not on the same straight line, and the fourth connecting beam 204 is close to the left side relative to the third connecting beam 203. The fifth connecting beam 205 and the sixth connecting beam 206 on the right side of the sensitive comb electrode 801 are not on the same straight line, and the fifth connecting beam 205 is close to the right relative to the sixth connecting beam 206; the influence of the electric signal generated by the lower resonance unit and the electric signal transmitted in the sixth connection beam 206 on the fifth connection beam 205 and the third extraction electrode 103 is reduced.
Second transverse tie beam holes 602 and first transverse tie beam holes 601 are formed at the joints of the transverse tie beams 141 and 142 and the anchor blocks 701 to form a T-shaped beam structure for improving resonance quality factors; third and fourth tie beam holes 603 and 604 are formed at the joints of the tie beams 141 and 142 and the second anchor block 702 to form a T-shaped beam structure, so as to improve the resonance quality factor and improve the stability of the sensor.
The resonance layer fixing seat 2-3 is of a silicon structure, and is integrated with the anchor block 701, the anchor block 702 and the electrode in the resonance layer 2-1, and the silicon and the resonance layer fixing seat 2-3 and the anchor block 701, the anchor block 702 and the electrode in the resonance layer 2-1 are bonded together through silicon-silicon bonding 2-2, so that the resonator is integrated into a rigid structure, the support is provided for the resonance layer 2-1, the resonator is guaranteed not to be influenced by external pressure and the like during working, and the temperature measurement precision is improved. The electrodes comprise first to fourth extraction electrodes 101-104, first to third drive electrodes 401-403, two groups of drive electrode channels 501-502, two groups of sensitive comb electrodes 801-802 and a spare electrode 15.
The second embodiment is as follows: referring to fig. 1, the first anchor hole 601 and the second anchor hole 602 are provided on the left side of the intersection between the lower and upper tie beams 142 and 141 and the first anchor 701. Due to the arrangement, the influence of the first anchor block 701 on the internal stress and the damping of the upper resonant unit and the lower resonant unit due to the deformation of the pressure sensitive membrane is reduced, and the resonant quality factor is further improved. Other components and connections are the same as in the first embodiment.
The third concrete implementation mode: the lower resonance unit of the present embodiment is described with reference to fig. 1, and includes a lower sensitive comb-tooth electrode 801, a first connecting support beam 901, a first stabilizing beam 111, a lower mass block 131, a second stabilizing beam 112, and a second connecting support beam 902, where the lower sensitive comb-tooth electrode 801 is mounted on the second driving electrode 402 to form an array capacitor, and the first connecting support beam 901 connects the lower sensitive comb-tooth electrode 801 with the third connecting beam 203 and the fourth connecting beam 204 as a whole to form a stable left lower triangular support; the second connecting support beam 902 connects the lower sensitive comb-tooth electrode 801 with the fifth connecting beam 205 and the sixth connecting beam 206 into a whole to form a stable right lower triangular support; a lower mass block 131 is arranged between the left lower triangular support and the right lower triangular support, and the lower mass block 131 is connected with a lower sensitive comb electrode 801 through a first stabilizing beam 111 and a second stabilizing beam 112 on the left side and the right side; a second resonance hole 122 is arranged between the upper end of the lower mass block 131 and the upper tie beam 141, and a first resonance hole 121 is arranged between the lower end of the lower mass block 131 and the lower sensitive comb-tooth electrode 801. So set up, can improve the fundamental frequency of resonance unit down, and the resonance unit's that easily shakes down intensity and stability under the operating condition also is convenient for guarantee down. Other compositions and connection relationships are the same as in the first, second or third embodiment.
The first stabilizing beam 111 and the second to stabilizing beams 112 of the present embodiment are located at both sides of the mass block 131, and are symmetrical with respect to the center line of the long side of the rectangle; the first stabilizing beam 111 to the second stabilizing beam 112 connect the lower mass block 131 and the sensitive comb teeth electrode 801 to form two stable triangular fixed supports;
the fourth concrete implementation mode: the present embodiment is described with reference to fig. 1, and the width of the second resonance hole 122 of the present embodiment is 2 times the width of the first resonance hole 121. Due to the arrangement, the mass block 131 is close to the sensitive comb-tooth electrode 801 and the triangular support structure, and is far away from the upper cross tie beam 141, so that the vibration of the sensitive comb-tooth electrode 801 is facilitated, the working stability is improved, the influence of the mass block 131 is reduced, and the fundamental frequency of the mass block is improved. Other compositions and connection relationships are the same as those in the first, second, third or fourth embodiment.
The fifth concrete implementation mode: the embodiment is described with reference to fig. 1, the upper resonance unit of the embodiment includes an upper sensitive comb-tooth electrode 802, a fourth connecting support beam 904, a fourth stabilizing beam 114, an upper mass block 132, a third stabilizing beam 113 and a third connecting support beam 903, the upper sensitive comb-tooth electrode 802 is mounted on the third driving electrode 403 to form an array capacitor, and the fourth connecting support beam 904 connects the upper sensitive comb-tooth electrode 802 with the first connecting beam 201 and the second connecting beam 202 as a whole to form a stable upper left triangular support; the third connecting support beam 903 connects the upper sensitive comb electrode 802 with the seventh connecting beam 207 and the eighth connecting beam 208 into a whole to form a stable upper right triangular support; an upper mass block 132 is arranged between the upper left triangular support and the upper right triangular support, and the upper mass block 132 is connected with an upper sensitive comb electrode 802 through a third stabilizing beam 113 and a fourth stabilizing beam 114 on the left side and the right side; a third resonant hole 123 is arranged between the upper end of the upper mass block 132 and the upper sensitive comb-tooth electrode 802, and a fourth resonant hole 124 is arranged between the lower end of the upper mass block 132 and the upper cross tie beam 142. So set up, can improve the fundamental frequency of resonance unit down, and the resonance unit's that easily shakes down intensity and stability under the operating condition also is convenient for guarantee down. Other compositions and connection relationships are the same as in the first, second, third, fourth or fifth embodiment.
The third stabilizing beam 113 and the fourth stabilizing beam 114 of the present embodiment are located on both sides of the upper mass block 132, and are symmetrical with respect to the center line of the long side of the rectangle; the third stabilizing beam 113 to the fourth stabilizing beam 114 connect the upper mass 132 and the sensing comb-teeth electrode 802 to form two stable triangular fixed supports.
The sixth specific implementation mode: the present embodiment is described with reference to fig. 1, and the width of the fourth resonance hole 124 of the present embodiment is 2 times the width of the third resonance hole 123. By such arrangement, the mass block 132 is close to the sensitive comb-teeth electrode 802 and the triangular support structure, and is away from the upper cross tie beam 142 in addition to facilitating the oscillation starting and the working stability of the sensitive comb-teeth electrode 802, thereby reducing the influence of the mass block 132 and improving the fundamental frequency of the mass block. Other compositions and connection relationships are the same as in the first, second, third, fourth, fifth or sixth embodiment.
Second transverse tie beam holes 602 and first transverse tie beam holes 601 are formed at the joints of the transverse tie beams 141 and 142 and the anchor blocks 701 to form a T-shaped beam structure; third and fourth tie beam holes 603 and 604 are formed at the joints of the tie beams 141 and 142 and the anchor block 702 to form a T-shaped beam structure.
The resonance layer fixing seat 2-3 is of a silicon structure, and forms an integral body with the first anchor block 701, the second anchor block 702 and the electrode in the resonance layer 2-1 to provide support so as to ensure that the resonator is not influenced by the external environment when working; the resonance layer fixing seat 2-3 is bonded with the anchor block 701, the anchor block 702 and the electrode in the resonance layer fixing seat 2-3 and the resonance layer 2-1 through silicon-silicon bonding 2-2, so that the resonator forms an integral rigid structure. The electrode is composed of first to fourth extraction electrodes 101-104, first to third drive electrodes 401-403, two groups of drive electrode channels 501-502, two groups of sensitive comb electrodes 801-802 and a spare electrode 15.
The resonance layer 2-1 includes first to fourth extraction electrodes 101 to 104, first to eighth connection beams 201 to 208, first to fourth connection blocks 301 to 304, first to third drive electrodes 401 to 403, two sets of drive electrode paths 501 to 502, first to fourth cross-beam holes 601 to 604, two anchor blocks 701 to 702, two sets of sensitive comb electrodes 801 to 802, first to fourth connection support beams 901 to 904, first to fourth stabilization beams 111 to 114, first to fourth resonance holes 121 to 124, two mass blocks 131 to 132, two cross-beam 141 to 142, and a backup electrode 15.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. A silicon micro-resonance type temperature sensitive chip based on SOI is characterized in that: the resonator comprises a resonator body, a resonance layer (2-1), a silicon-silicon bonding layer (2-2) and a resonance layer fixing seat (2-3), wherein the resonance layer fixing seat (2-3) is of a silicon structure, the resonance layer fixing seat (2-3) and a first anchor block (701), a second anchor block (702) and a spare electrode passage (502) of the resonator body in the resonance layer (2-1) form a whole, and the silicon-silicon bonding layer (2-2) is used for bonding the silicon-silicon bonding layer fixing seat (2-3) and the first anchor block (701), the second anchor block (702) and the spare electrode passage (502) in the resonance layer (2-1) together to form a whole rigid structure;
the resonator body comprises a first extraction electrode (101), a second extraction electrode (102), a third extraction electrode (103), a fourth extraction electrode (104), a first driving electrode (401), a second driving electrode (402), a third driving electrode (403), a standby electrode (15), a first anchor block (701), a second anchor block (702), a lower transverse tension beam (142), an upper transverse tension beam (141), an upper resonance unit and a lower resonance unit, a first connection block (301), a second connection block (302), a third connection block (303), a fourth connection block (304), a driving electrode path (501), a spare electrode path (502), a first connection beam (201), a fourth connection beam (204), a fifth connection beam (205), a seventh connection beam (207), a second connection beam (202), a third connection beam (203), a sixth connection beam (206), and an eighth connection beam (208);
the first extraction electrode (101), the third driving electrode (403) and the fourth extraction electrode (104) are positioned in the same row, the second extraction electrode (102), the second driving electrode (402) and the third extraction electrode (103) are positioned in the same row, a first anchor block (701) and a second anchor block (702) are arranged between the second driving electrode (402) and the third driving electrode (403), the first anchor block (701) and the second anchor block (702) are respectively connected through a lower transverse tension beam (142) and an upper transverse tension beam (141), the lower transverse tension beam (142) and the upper transverse tension beam (141) are respectively connected with the second driving electrode (402) and the third driving electrode (403) through an upper resonance unit and a lower resonance unit, the first connecting block (301) and the second connecting block (302) are connected and then arranged outside the first anchor block (701), the third connecting block (303) and the fourth connecting block (304) are connected and then arranged outside the second anchor block (702), a first driving electrode (401) is connected with a first connecting block (301) and a second connecting block (302) through a driving electrode passage (501), a spare electrode (15) is connected with a third connecting block (303) and a fourth connecting block (304) through a spare electrode passage (502), a first extraction electrode (101) is connected with an upper resonance unit through a first connecting beam (201), a second extraction electrode (102) is connected with a lower resonance unit through a fourth connecting beam (204), a third extraction electrode (103) is connected with the lower resonance unit through a fifth connecting beam (205), a fourth extraction electrode (104) is connected with the upper resonance unit through an eighth connecting beam (208), the first connecting block (301) is connected with the upper resonance unit through a second connecting beam (202), and the second connecting block (302) is connected with the lower resonance unit through a third connecting beam (203), the third connecting block (303) is connected with the lower resonance unit through a sixth connecting beam (206), and the fourth connecting block (304) is connected with the upper resonance unit through a seventh connecting beam (207).
2. An SOI-based silicon micro-resonant temperature sensitive chip according to claim 1, wherein: a first anchor block hole (601) and a second anchor block hole (602) are formed in the left side of the intersection of the lower transverse tie beam (142) and the upper transverse tie beam (141) and the first anchor block (701).
3. An SOI-based silicon micro-resonant temperature sensitive chip according to claim 2, wherein: and a third anchor block hole (603) and a fourth anchor block hole (604) are formed at the intersection of the lower transverse tie beam (142), the upper transverse tie beam (141) and the second anchor block (702).
4. An SOI-based silicon micro-resonant temperature sensitive chip according to claim 3, wherein: the lower resonance unit comprises a lower sensitive comb electrode (801), a first connecting supporting beam (901), a first stabilizing beam (111), a lower mass block (131), a second stabilizing beam (112) and a second connecting supporting beam (902), the lower sensitive comb electrode (801) is an array capacitor, and the first connecting supporting beam (901) connects the upper part of the lower sensitive comb electrode (801), the third connecting beam (203) and the fourth connecting beam (204) into a whole to form a stable left lower triangular support; the second connecting support beam (902) connects the upper part of the lower sensitive comb electrode (801), the fifth connecting beam (205) and the sixth connecting beam (206) into a whole to form a stable right lower triangular support; a lower mass block (131) is arranged between the left lower triangular support and the right lower triangular support, and the lower mass block (131) is connected with the upper part of a lower sensitive comb electrode (801) through a first stabilizing beam (111) and a second stabilizing beam (112) on the left side and the right side; a second resonance hole (122) is formed between the upper end of the lower mass block (131) and the upper cross tie beam (141), and a first resonance hole (121) is formed between the lower end of the lower mass block (131) and the upper portion of the lower sensitive comb electrode (801).
5. An SOI-based silicon micro-resonance type temperature-sensitive chip according to claim 4, characterized in that: the width of the second resonance hole (122) is 2 times the width of the first resonance hole (121).
6. An SOI-based silicon micro-resonance type temperature-sensitive chip according to claim 5, characterized in that: the upper resonance unit comprises an upper sensitive comb electrode (802), a fourth connecting supporting beam (904), a fourth stabilizing beam (114), an upper mass block (132), a third stabilizing beam (113) and a third connecting supporting beam (903), the upper sensitive comb electrode (802) is an array capacitor, and the lower support of the upper sensitive comb electrode (802) is connected with the first connecting beam (201) and the second connecting beam (202) into a whole by the fourth connecting supporting beam (904) to form a stable upper left triangular support; the third connecting support beam (903) connects the lower support of the upper sensitive comb electrode (802), the seventh connecting beam (207) and the eighth connecting beam (208) into a whole to form a stable upper right triangular support; an upper mass block (132) is arranged between the upper left triangular support and the upper right triangular support, and the upper mass block (132) is connected with the lower support of the upper sensitive comb-tooth electrode (802) through a third stabilizing beam (113) and a fourth stabilizing beam (114) on the left side and the right side; a third resonance hole (123) is arranged between the upper end of the upper mass block (132) and the lower part of the upper sensitive comb-tooth electrode (802), and a fourth resonance hole (124) is arranged between the lower end of the upper mass block (132) and the upper cross tie beam (141).
7. An SOI-based silicon micro-resonant temperature sensitive chip according to claim 6, wherein: the width of the fourth resonance hole (124) is 2 times the width of the third resonance hole (123).
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| CN113697764B (en) * | 2021-08-25 | 2023-07-07 | 中国电子科技集团公司第四十九研究所 | Resonance temperature sensitive chip probe of isolation packaging structure and packaging method thereof |
| CN113816330B (en) * | 2021-08-25 | 2023-08-04 | 中国电子科技集团公司第四十九研究所 | Resonance temperature sensitive chip probe of vacuum packaging structure and packaging method thereof |
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