CN109883565A - A kind of silicon micro-resonance type temperature sensitive chip based on SOI - Google Patents
A kind of silicon micro-resonance type temperature sensitive chip based on SOI Download PDFInfo
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Abstract
A kind of silicon micro-resonance type temperature sensitive chip based on SOI, is related to a kind of resonator.The present invention is increased to 0.05 DEG C for 0.15 DEG C of the traditional measurements precision such as existing platinum resistance, realizes the purpose for improving temperature measurement accuracy.The present invention includes resonator body, resonant layer (2-1), Si-Si bonding layer (2-2) and resonant layer fixing seat (2-3), resonant layer fixing seat (2-3) is silicon structure, the first anchor block (701) of resonator body in resonant layer fixing seat (2-3) and resonant layer (2-1), second anchor block (702) and backup electrode access (502) structure are integral, by Si-Si bonding layer (2-2) by the first anchor block (701) in silicon and resonant layer fixing seat (2-3) and resonant layer (2-1), second anchor block (702) and backup electrode access (502) are bonded to together, resonator is set to constitute an overall structure rigid structure.The present invention is tested for temperature sensitivity.
Description
Technical field
The present invention relates to a kind of MEMS resonant formula pressure sensors, and in particular to a kind of silicon micro-resonance type temperature based on SOI
Spend sensitive chip.
Background technique
Conventional temperature sensor such as platinum resistance, copper resistance sensor, precision are up to 0.15 DEG C, and precision can not be further
It improves；Although fibre optic temperature sensor has higher temperature measurement accuracy, but higher cost, and optical fiber is easy loss.
Resonant transducer is as generation high-precision sensor, with resonance type pressure sensor and resonant mode temperature sensor
Based on, the measurement of more physical parameters is realized, has the characteristics that high-precision, micro-structure, rate-adaptive pacemaker；Resonant transducer tool
Have outside small structure, low in energy consumption, fast, the reproducible, stability of response and high reliablity, it is high, anti-to be also equipped with bandwidth, signal-to-noise ratio
Impact, strong antijamming capability, easy of integration, the advantages that can be mass-produced, is at low cost, obtain the extensive concern and again of countries in the world
Point exploitation.
The temperature sensor theoretical precision of resonant mode principle can reach 0.05 DEG C, and accurate temperature measurement may be implemented, and be high
The developing direction of accuracy temperature sensor.The traditional measurements mode such as traditional platinum resistance, copper resistance be using conductor resistance value with
Temperature change and change and be in the characteristic of certain functional relation to carry out thermometric, limited by conductor material itself, precision
Up to 0.15 DEG C.There are problems that temperature sensor low precision.
Summary of the invention
The present invention is in order to achieve the purpose that improve temperature measurement accuracy, by the 0.15 of the traditional measurements precision such as existing platinum resistance
DEG C it is increased to 0.05 DEG C, provides a kind of silicon micro-resonance type temperature sensitive chip based on SOI.
The technical scheme is that a kind of silicon micro-resonance type temperature sensitive chip based on SOI, it includes resonator sheet
Body, resonant layer, Si-Si bonding layer and resonant layer fixing seat, resonant layer fixing seat-be silicon structure, resonant layer fixing seat-with it is humorous
Shake the first anchor block of the middle resonator body of layer-, the second anchor block and backup electrode access structure is integral, passes through Si-Si bonding
The first anchor block, the second anchor block and backup electrode access in silicon and resonant layer fixing seat-and resonant layer-is bonded to one by layer-
It rises, resonator is made to constitute an overall structure rigid structure；
Resonator body includes the first extraction electrode, the second extraction electrode, third extraction electrode, the 4th extraction electrode, the
One driving electrodes, the second driving electrodes, third driving electrodes, backup electrode, the first anchor block, the second anchor block, lower horizontal straining beam, upper cross
Straining beam, upper resonant element, lower resonant element, the first link block, the second link block, third link block, the 4th link block, driving electricity
Pole access, backup electrode access, the first attachment beam, the 4th attachment beam, the 5th attachment beam, the 7th attachment beam, the second attachment beam,
Three attachment beams, the 6th attachment beam and the 8th attachment beam；
First extraction electrode, third driving electrodes and the 4th extraction electrode are located at same row, and the second extraction electrode, second drive
Moving electrode and third extraction electrode are located at same row, and the first anchor block and the second anchor block are mounted on the second driving electrodes and third driving
Between electrode, connected respectively by lower horizontal straining beam with upper horizontal straining beam between the first anchor block and the second anchor block, lower horizontal straining beam and upper cross
It is connected respectively by upper resonant element and lower resonant element between straining beam and the second driving electrodes and third driving electrodes, first connects
It is mounted on the outside of the first anchor block after connecing block and the connection of the second link block, is mounted on after third link block and the connection of the 4th link block
The outside of second anchor block is connected between the first driving electrodes and the first link block and the second link block by driving electrodes access,
It is connected between backup electrode and third link block and the 4th link block by backup electrode access, the first extraction electrode and upper resonance
It is connected between unit by the first attachment beam, is connected between the second extraction electrode and lower resonant element by the 4th attachment beam, the
It is connected between three extraction electrodes and lower resonant element by the 5th attachment beam, is passed through between the 4th extraction electrode and upper resonant element
The connection of 8th attachment beam, is connected between the first link block and upper resonant element by the second attachment beam, and the second link block is humorous under
It is connected between vibration unit by third attachment beam, is connected between third link block and lower resonant element by the 6th attachment beam, the
It is connected between four link blocks and upper resonant element by the 7th attachment beam.
Further, the left side of the intersection of lower horizontal straining beam and upper horizontal straining beam and the first anchor block is equipped with the first anchor block hole and the
Two anchor block holes.
Further, the intersection of lower horizontal straining beam and upper horizontal straining beam and the second anchor block is equipped with third anchor block hole and the 4th anchor block
Hole.
Further, lower resonant element includes lower sensitive comb electrodes, the first connection supporting beam, the first fixing beam, lower matter
Gauge block, the second fixing beam and the second connection supporting beam, lower sensitivity comb electrodes, which are mounted in the second driving electrodes, forms array electricity
Hold, lower sensitive comb electrodes are connected as one by the first connection supporting beam with third attachment beam and the 4th attachment beam, are formed and are stablized
Lower-left gusseted；Lower sensitive comb electrodes and the 5th attachment beam and the 6th attachment beam are connected as one by the second connection supporting beam
Body forms stable right bottom triangle support；Lower mass block, lower mass block are equipped between lower-left gusseted and right bottom triangle support
It is connect by the first fixing beam and the second fixing beam of the left and right sides with lower sensitive comb electrodes；The upper end of lower mass block and upper cross
It is equipped with the second resonance hole between straining beam, is equipped with the first resonance hole between the lower end of lower mass block and lower sensitive comb electrodes.
Further, the width in the second resonance hole is 2 times of the first resonance hole width.
Further, upper resonant element includes upper sensitive comb electrodes, the 4th connection supporting beam, the 4th fixing beam, upper matter
Gauge block, third fixing beam connect supporting beam with third, and upper sensitivity comb electrodes, which are mounted in third driving electrodes, forms array electricity
Hold, upper sensitive comb electrodes are connected as one by the 4th connection supporting beam with the first attachment beam and the second attachment beam, are formed and are stablized
Left top triangle support；Third connects supporting beam and upper sensitive comb electrodes and the 7th attachment beam and the 8th attachment beam is connected as one
Body forms stable upper right gusseted；Block of improving quality, block of improving quality are equipped between left top triangle support and upper right gusseted
It is connect by the third fixing beam and the 4th fixing beam of the left and right sides with upper sensitive comb electrodes；Improve quality block upper end with it is upper quick
Feel and be equipped with third resonance hole between comb electrodes, the 4th resonance hole is equipped between the lower end for block of improving quality and upper horizontal straining beam.
Further, the width in the 4th resonance hole is 2 times of third resonance hole width.
The present invention has following improvement effect compared with prior art:
1, the present invention provides excitation by electrostatic, and the first driving electrodes 401 are the positive or negative pole of static excitation, the second driving
Electrode 402 and third driving electrodes 403 and the first driving electrodes polarity are on the contrary, distinguish matched lower sensitive comb electrodes
801, upper sensitive comb electrodes 802 generate electrostatic, under the driving of the static excitation, lower mass block 131, block 132 of improving quality hair
Raw vibration connects supporting beam 902, the first fixing beam when the change frequency of static excitation connect supporting beam 901, second with first
111, the first resonance hole 121, lower mass block 131, the second resonance hole 122, the second fixing beam 112, horizontal straining beam 141 are humorous under forming
Shake unit and third connection supporting beam the 903, the 4th connect supporting beam 904, third fixing beam 113, third resonance hole 123, on
The intrinsic frequency coupling for the upper resonant element that mass block 132, the 4th resonance hole 124, the 4th fixing beam 114, horizontal straining beam 142 form
When, resonance phenomena occurs, the amplitude variations of upper and lower resonant element are obvious, and a first order mode of resonant element is rectangular along being parallel to
The vibration in the same direction of shape short side direction, second_mode are along the opposite vibration for being parallel to rectangle short side direction, which is required
Improvement of The Experimental Modal Shape.
2, under the driving of the static excitation, the intrinsic frequency of the resonant element in two mass block resonators is coupled
When, resonance phenomena occurs；When environment temperature changes, since the thermal expansion coefficient of silicon changes, lead to the resonator
Intrinsic frequency change, temperature measurement is realized in the variation by detecting resonance frequency, and the precision of this kind of measuring principle depends on
In the variation of resonant frequency, which may be implemented accurately to measure, and achieve the purpose that temperature measurement accuracy is promoted to 0.05 DEG C.Together
When resonance fixing seat 2-3 with the resonant element in resonant layer 2-1 whole rigid structural is formed by Si-Si bonding 2-2, can keep away
Exempting from external environmental factor influences resonator, and such as pressure influence, Product Precision is significantly improved.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is schematic cross-sectional view of the invention.
Specific embodiment
Specific embodiment 1: illustrating present embodiment, a kind of silicon micro-resonance type temperature based on SOI in conjunction with Fig. 1 and Fig. 2
Sensitive chip, it includes that resonator body, resonant layer 2-1, Si-Si bonding layer 2-2 and resonant layer fixing seat 2-3, resonant layer are fixed
Seat 2-3 is silicon structure, the first anchor block 701, the second anchor block of resonator body in resonant layer fixing seat 2-3 and resonant layer 2-1
702 and 502 structure of backup electrode access it is integral, by Si-Si bonding layer 2-2 by silicon and resonant layer fixing seat 2-3 and resonance
The first anchor block 701, the second anchor block 702 and backup electrode access 502 in layer 2-1 are bonded to together, so that resonator is constituted one whole
Body structural rigidity structure；
Resonator body is drawn including the first extraction electrode 101, the second extraction electrode 102, third extraction electrode the 103, the 4th
Electrode 104, the first driving electrodes 401, the second driving electrodes 402, third driving electrodes 403, backup electrode 15, the first anchor block out
701, the second anchor block 702, lower horizontal straining beam 142, upper horizontal straining beam 141, upper resonant element, lower resonant element, the first link block 301,
Second link block 302, third link block 303, the 4th link block 304, driving electrodes access 501, backup electrode access 502,
One attachment beam 201, the 4th attachment beam 204, the 5th attachment beam 205, the 7th attachment beam 207, the second attachment beam 202, third connection
Beam 203, the 6th attachment beam 206 and the 8th attachment beam 208；
First extraction electrode 101, third driving electrodes 403 and the 4th extraction electrode 104 are located at same row, and second draws electricity
Pole 102, the second driving electrodes 402 and third extraction electrode 103 are located at same row, the first anchor block 701 and the installation of the second anchor block 702
Between the second driving electrodes 402 and third driving electrodes 403, under passing through respectively between the first anchor block 701 and the second anchor block 702
Horizontal straining beam 142 and the connection of upper horizontal straining beam 141, lower horizontal straining beam 142 and upper horizontal straining beam 141 and the second driving electrodes 402 and third are driven
It is connected respectively by upper resonant element with lower resonant element between moving electrode 403, the first link block 301 and the second link block 302
It is mounted on the outside of the first anchor block 701 after connection, is mounted on the second anchor after third link block 303 and the connection of the 4th link block 304
The outside of block 702 passes through driving electrodes access between first driving electrodes 401 and the first link block 301 and the second link block 302
501 connections, are connected between backup electrode 15 and third link block 303 and the 4th link block 304 by backup electrode access 502,
It is connected between first extraction electrode 101 and upper resonant element by the first attachment beam 201, the second extraction electrode 102 and lower resonance
It is connected between unit by the 4th attachment beam 204, passes through the 5th attachment beam between third extraction electrode 103 and lower resonant element
205 connections, are connected between the 4th extraction electrode 104 and upper resonant element by the 8th attachment beam 208, the first link block 301 with
It is connected between upper resonant element by the second attachment beam 202, is connected between the second link block 302 and lower resonant element by third
Beam 203 connects, and is connected between third link block 303 and lower resonant element by the 6th attachment beam 206, the 4th link block 304 with
It is connected between upper resonant element by the 7th attachment beam 207.
The resonator of present embodiment generally rectangle, and respectively about the rectangular long side, the center line of short side
Axisymmetricly figure.
The first attachment beam 201 and the second attachment beam 202 that present embodiment is in sensitive 802 left side of comb electrodes be not same
On straight line, opposite second attachment beam 202 of the first attachment beam 201 keeps left.The 7th in sensitive 802 right side of comb electrodes connects
It connects beam 207 and the 8th attachment beam 208 is not arranged on the same straight line, opposite 7th attachment beam 207 of the 8th attachment beam 208 is kept right；Place
It is not arranged on the same straight line in the third attachment beam 203 in sensitive 801 left side of comb electrodes and the 4th attachment beam 204, the 4th connection
Beam 204 keeps left with respect to third attachment beam 203.The 5th attachment beam 205 and the 6th attachment beam in sensitive 801 right side of comb electrodes
206 are not arranged on the same straight line, and opposite 6th attachment beam 206 of the 5th attachment beam 205 is kept right；Reduce the electricity that lower resonant element generates
Influence of the electric signal transmitted in signal, the 6th attachment beam 206 to the 5th attachment beam 205 and third extraction electrode 103.
The second horizontal straining beam hole 602 and the first horizontal straining beam is arranged in the junction of horizontal straining beam 141 and horizontal straining beam 142 and anchor block 701
Hole 601 forms T-type girder construction, to improve resonance quality factor；Horizontal straining beam 141 and horizontal straining beam 142 and the second anchor block 702
The horizontal straining beam hole 603 of third and the 4th horizontal straining beam hole 604 is arranged in junction, forms T-type girder construction, to improve resonance quality because
Son improves the stability of sensor.
Resonant layer fixing seat 2-3 is that anchor block 701 in silicon structure, with resonant layer 2-1, anchor block 702 and electrode composition one are whole
Body, by Si-Si bonding 2-2, by anchor block 701, anchor block 702 and electrode in silicon and resonant layer fixing seat 2-3 and resonant layer 2-1
It is bonded to together, resonator is made to constitute an overall structure rigid structure, provide support for resonant layer 2-1, guarantee resonator works
When do not influenced by ambient pressure etc., improve temperature measurement accuracy.Wherein electrode by first to fourth extraction electrode 101~104, first to
401~403, two groups of third driving electrodes, 501~502, two groups of driving electrodes access sensitivity comb electrodes 801~802 and spare
Electrode 15 forms.
Specific embodiment 2: embodiment is described with reference to Fig. 1, the lower horizontal straining beam 142 of present embodiment and upper horizontal drawing
The left side of the intersection of beam 141 and the first anchor block 701 is equipped with the first anchor block hole 601 and the second anchor block hole 602.So set, drop
The low deformation because of pressure sensitive film, the first anchor block 701 improve the internal stress of upper and lower resonant element and the influence of damping
Resonance quality factor.Other compositions and connection relationship are same as the specific embodiment one.
Specific embodiment 3: embodiment is described with reference to Fig. 1, the lower resonant element of present embodiment includes lower sensitivity
Comb electrodes 801, first connect supporting beam 901, the first fixing beam 111, lower mass block 131, the second fixing beam 112 and second and connect
Supporting beam 902 is connect, lower sensitivity comb electrodes 801, which are mounted in the second driving electrodes 402, forms array capacitor, the first connection support
Lower sensitive comb electrodes 801 are connected as one by beam 901 with third attachment beam 203 and the 4th attachment beam 204, form a stable left side
Lower gusseted；Second connects supporting beam 902 for lower sensitive comb electrodes 801 and the 5th attachment beam 205 and the 6th attachment beam 206
It is connected as one, forms stable right bottom triangle support；Lower mass block is equipped between lower-left gusseted and right bottom triangle support
131, lower mass block 131 passes through the first fixing beam 111 of the left and right sides and the second fixing beam 112 and lower sensitive comb electrodes 801
Connection；Between the upper end of lower mass block 131 and upper horizontal straining beam 141 be equipped with the second resonance hole 122, the lower end of lower mass block 131 with
The first resonance hole 121 is equipped between lower sensitivity comb electrodes 801.So set, the fundamental frequency of lower resonant element can be improved, and it is easy to
The starting of oscillation of lower resonant element is also convenient for guaranteeing the intensity and stabilization of lower resonant element in the operating condition.Other compositions and connection
Relationship is identical as specific embodiment one, two or three.
First fixing beam 111 of present embodiment and second is in 131 two sides of mass block to fixing beam 112, and about length
Rectangular long side center line is symmetrical；First fixing beam, 111 to the second fixing beam 112 is by lower mass block 131 and sensitive comb electrodes 801
It is clamped to form two stable triangles for connection；
Specific embodiment 4: embodiment is described with reference to Fig. 1, the width in the second resonance hole 122 of present embodiment
It is 2 times of 121 width of the first resonance hole.So set, making mass block 131 close to sensitive comb electrodes 801 and gusseted
Structure, far from upper horizontal straining beam 141, reduces it to mass block in addition to convenient for the starting of oscillation of sensitive comb electrodes 801 and the operation is stable
131 influence, and improve its fundamental frequency.Other compositions and connection relationship and specific embodiment one, two, three or four are identical.
Specific embodiment 5: embodiment is described with reference to Fig. 1, the upper resonant element of present embodiment includes upper sensitivity
Comb electrodes the 802, the 4th connect supporting beam 904, the 4th fixing beam 114, block 132 of improving quality, third fixing beam 113 and third and connect
Supporting beam 903 is connect, upper sensitivity comb electrodes 802, which are mounted in third driving electrodes 403, forms array capacitor, the 4th connection support
Upper sensitive comb electrodes 802 are connected as one by beam 904 with the first attachment beam 201 and the second attachment beam 202, form a stable left side
Upper gusseted；Third connects supporting beam 903 for upper sensitive comb electrodes 802 and the 7th attachment beam 207 and the 8th attachment beam 208
It is connected as one, forms stable upper right gusseted；Block of improving quality is equipped between left top triangle support and upper right gusseted
132, block 132 of improving quality passes through the third fixing beam 113 of the left and right sides and the 4th fixing beam 114 and upper sensitive comb electrodes 802
Connection；Improve quality block 132 upper end and upper sensitive comb electrodes 802 between be equipped with third resonance hole 123, block 132 of improving quality
The 4th resonance hole 124 is equipped between lower end and upper horizontal straining beam 142.So set, the fundamental frequency of lower resonant element can be improved, and it is easy to
The starting of oscillation of lower resonant element is also convenient for guaranteeing the intensity and stabilization of lower resonant element in the operating condition.Other compositions and connection
Relationship and specific embodiment one, two, three, four or five are identical.
Two sides of the third fixing beam 113 and the 4th fixing beam 114 of present embodiment in block 132 of improving quality, and about
Rectangle long side center line is symmetrical；113 to the 4th fixing beam 114 of third fixing beam will improve quality block 132 and sensitive comb electrodes
802 connections, it is clamped to form two stable triangles.
Specific embodiment 6: embodiment is described with reference to Fig. 1, the width in the 4th resonance hole 124 of present embodiment
It is 2 times of 123 width of third resonance hole.So set, making mass block 132 close to sensitive comb electrodes 802 and gusseted
Structure, far from upper horizontal straining beam 142, reduces it to mass block in addition to convenient for the starting of oscillation of sensitive comb electrodes 802 and the operation is stable
132 influence, and improve its fundamental frequency.Other compositions and connection relationship and specific embodiment one, two, three, four, five or six phases
Together.
The second horizontal straining beam hole 602 and the first horizontal straining beam is arranged in the junction of horizontal straining beam 141 and horizontal straining beam 142 and anchor block 701
Hole 601 forms T-type girder construction；The horizontal straining beam hole 603 of third is arranged in the junction of horizontal straining beam 141 and horizontal straining beam 142 and anchor block 702
With the 4th horizontal straining beam hole 604, T-type girder construction is formed.
Resonant layer fixing seat 2-3 is the first anchor block 701, the second anchor block 702 and electrode in silicon structure, with resonant layer 2-1
Structure is integral, provides support, guarantees not to be affected by the external environment when resonator works；Resonant layer fixing seat 2-3 passes through silicon silicon
Anchor block 701, anchor block 702 and electrode in resonant layer fixing seat 2-3 and resonant layer 2-1 is bonded to together, makes by bonding 2-2
Resonator constitutes an overall structure rigid structure.Electrode is driven by first to fourth extraction electrode 101~104, first to third
401~403, two groups of electrode, 501~502, two groups of driving electrodes access sensitivity comb electrodes 801~802 and 15 groups of backup electrode
At.
Resonant layer 2-1 includes first to fourth the 101~104, first to the 8th attachment beam 201~208 of extraction electrode, the
One to the 4th link block 301~304, first is to 401~403, two groups of driving electrodes accesses 501~502 of third driving electrodes,
One to the 4th 601~604, two, horizontal straining beam hole, 701~702, two groups of sensitivity comb electrodes 801~802, first to fourth of anchor block
Connect supporting beam 901~904, first to fourth fixing beam 111~114,121~124, two, first to fourth resonance hole quality
131~132, two horizontal straining beams 141~142 of block and backup electrode 15.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (7)
1. a kind of silicon micro-resonance type temperature sensitive chip based on SOI, it is characterised in that: it includes resonator body, resonant layer
(2-1), Si-Si bonding layer (2-2) and resonant layer fixing seat (2-3), resonant layer fixing seat (2-3) are silicon structure, and resonant layer is solid
The first anchor block (701), the second anchor block (702) and backup electrode of resonator body are logical in reservation (2-3) and resonant layer (2-1)
Road (502) structure is integral, by Si-Si bonding layer (2-2) by silicon and resonant layer fixing seat (2-3) and resonant layer (2-1)
In the first anchor block (701), the second anchor block (702) and backup electrode access (502) be bonded to together, constitute resonator one whole
Body structural rigidity structure；
Resonator body includes the first extraction electrode (101), the second extraction electrode (102), third extraction electrode (103), the 4th
Extraction electrode (104), the first driving electrodes (401), the second driving electrodes (402), third driving electrodes (403), backup electrode
(15), the first anchor block (701), the second anchor block (702), lower horizontal straining beam (142), upper horizontal straining beam (141), upper resonant element, under it is humorous
Shake unit, the first link block (301), the second link block (302), third link block (303), the 4th link block (304), driving electricity
Pole access (501), backup electrode access (502), the first attachment beam (201), the 4th attachment beam (204), the 5th attachment beam
(205), the 7th attachment beam (207), the second attachment beam (202), third attachment beam (203), the 6th attachment beam (206) and the 8th connect
Connect beam (208)；
First extraction electrode (101), third driving electrodes (403) and the 4th extraction electrode (104) are located at same row, and second draws
Electrode (102), the second driving electrodes (402) and third extraction electrode (103) are located at same row, the first anchor block (701) and second
Anchor block (702) is mounted between the second driving electrodes (402) and third driving electrodes (403), the first anchor block (701) and the second anchor
It is connected respectively by lower horizontal straining beam (142) and upper horizontal straining beam (141) between block (702), lower horizontal straining beam (142) and upper horizontal straining beam
(141) pass through upper resonant element and lower resonant element respectively between the second driving electrodes (402) and third driving electrodes (403)
The outside of the first anchor block (701), third connection are mounted on after connection, the first link block (301) and the second link block (302) connection
It is mounted on the outsides of the second anchor block (702) after block (303) and the connection of the 4th link block (304), the first driving electrodes (401) and the
It is connected between one link block (301) and the second link block (302) by driving electrodes access (501), backup electrode (15) and the
It is connected between three link blocks (303) and the 4th link block (304) by backup electrode access (502), the first extraction electrode (101)
It is connect between upper resonant element by the first attachment beam (201), is passed through between the second extraction electrode (102) and lower resonant element
The connection of 4th attachment beam (204), is connect between third extraction electrode (103) and lower resonant element by the 5th attachment beam (205),
Connect between 4th extraction electrode (104) and upper resonant element by the 8th attachment beam (208), the first link block (301) with it is upper
It is connected between resonant element by the second attachment beam (202), is connected between the second link block (302) and lower resonant element by third
Beam (203) connection is connect, is connect between third link block (303) and lower resonant element by the 6th attachment beam (206), the 4th connection
It is connect between block (304) and upper resonant element by the 7th attachment beam (207).
2. a kind of silicon micro-resonance type temperature sensitive chip based on SOI according to claim 1, it is characterised in that: under horizontal straining beam
(142) and the left side of the intersection of upper horizontal straining beam (141) and the first anchor block (701) is equipped with the first anchor block hole (601) and the second anchor
Block hole (602).
3. a kind of silicon micro-resonance type temperature sensitive chip based on SOI according to claim 2, it is characterised in that: under horizontal straining beam
(142) and the intersection of upper horizontal straining beam (141) and the second anchor block (702) is equipped with third anchor block hole (603) and the 4th anchor block hole
(604)。
4. a kind of silicon micro-resonance type temperature sensitive chip based on SOI according to claim 3, it is characterised in that: lower resonance list
Member include lower sensitive comb electrodes (801), the first connection supporting beam (901), the first fixing beam (111), lower mass block (131),
Second fixing beam (112) and the second connection supporting beam (902), lower sensitivity comb electrodes 801 are array capacitor, the first connection support
Branch, third attachment beam 203 and the 4th attachment beam 204 in lower sensitive comb electrodes 801 are connected as one by beam 901, are formed and are stablized
Lower-left gusseted；Second connection supporting beam 902 connects branch, the 5th attachment beam 205 and the 6th in lower sensitive comb electrodes 801
It connects beam 206 to be connected as one, forms stable right bottom triangle support；It is equipped with down between lower-left gusseted and right bottom triangle support
Mass block 131, lower mass block 131 pass through the first fixing beam 111 of the left and right sides and the second fixing beam 112 and lower sensitive comb teeth electricity
Branch connects on pole 801；The second resonance hole 122, lower mass block 131 are equipped between the upper end of lower mass block 131 and upper horizontal straining beam 141
Lower end and lower sensitive comb electrodes on be equipped with the first resonance hole 121 between branch in branch 801.
5. a kind of silicon micro-resonance type temperature sensitive chip based on SOI according to claim 4, it is characterised in that: the second resonance
The width in hole (122) is 2 times of first resonance hole (121) width.
6. a kind of silicon micro-resonance type temperature sensitive chip based on SOI according to claim 5, it is characterised in that: upper resonance list
Member include upper sensitive comb electrodes (802), the 4th connection supporting beam (904), the 4th fixing beam (114), block of improving quality (132),
Third fixing beam (113) connects supporting beam (903) with third, and upper sensitivity comb electrodes 802 are array capacitor, the 4th connection support
Upper sensitive comb electrodes 802 lower are connected as one by beam 904 with the first attachment beam 201 and the second attachment beam 202, are formed and are stablized
Left top triangle support；Third connects supporting beam 903 and connects upper sensitive comb electrodes 802 lower, the 7th attachment beam 207 and the 8th
It connects beam 208 to be connected as one, forms stable upper right gusseted；It is equipped between left top triangle support and upper right gusseted upper
Mass block 132, block 132 of improving quality pass through the third fixing beam 113 of the left and right sides and the 4th fixing beam 114 and upper sensitive comb teeth electricity
The lower branch connection in pole 802；It improves quality between the upper end and upper sensitive comb electrodes 802 lower of block 132 equipped with third resonance hole 123,
It improves quality and is equipped with the 4th resonance hole 124 between the lower end and upper horizontal straining beam 142 of block 132.
7. a kind of silicon micro-resonance type temperature sensitive chip based on SOI according to claim 6, it is characterised in that: the 4th resonance
The width in hole (124) is 2 times of third resonance hole (123) width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910189689.XA CN109883565B (en) | 2019-03-13 | 2019-03-13 | Silicon micro-resonance type temperature sensitive chip based on SOI |
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| CN201910189689.XA CN109883565B (en) | 2019-03-13 | 2019-03-13 | Silicon micro-resonance type temperature sensitive chip based on SOI |
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| CN109883565B CN109883565B (en) | 2020-10-13 |
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Cited By (3)
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