CN101348233A - Microstructure resonant beam pressure sensor - Google Patents
Microstructure resonant beam pressure sensor Download PDFInfo
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- CN101348233A CN101348233A CNA2008101508788A CN200810150878A CN101348233A CN 101348233 A CN101348233 A CN 101348233A CN A2008101508788 A CNA2008101508788 A CN A2008101508788A CN 200810150878 A CN200810150878 A CN 200810150878A CN 101348233 A CN101348233 A CN 101348233A
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Abstract
The invention provides a micro-structure resonant beam pressure sensor, comprising an upper silicon slice and a lower silicon slice which are formed by linkage, wherein the upper silicon slice comprises a rectangular frame and two symmetrical peninsulas arranged in the rectangular frame; two groups of resonant beams which are made of titanium nitride and arranged side by side have two ends connected with the two peninsulas respectively; each resonant beam is respectively provided with a lead wire and a excitation resistance and a sensing resistance which are connected with electrodes; the lower silicon slice adopts a structure with an O-shaped frame, in which a pressure film arranged. In the invention, the titanium nitride is used as the resonant beams of the pressure sensor, and the titanium nitride has very high natural resonance frequency, the precision of the resonant type pressure sensor is greatly improved due to the use of the titanium nitride resonant beams. The measuring precision can be improved by increasing the natural resonance frequency, because higher the natural resonance frequency is, the bigger movement the corresponding zero pressure frequency has (the precision of the sensor is the specific value of the frequency instability and the movement of the corresponding zero pressure frequency) , and higher the measuring precision of the pressure is.
Description
Technical field
The present invention relates to a kind of micro pressure sensor, be specifically related to a kind of microstructure resonant beam pressure sensor that can improve the micro pressure sensor precision.
Background technology
MEMS (Micro Electro Mechanical Systems, abbreviation MEMS) ripe the making that be tending towards gradually of the development of technology and process technology thereof developed the integrated level height, cost is low, in light weight, volume MEMS sensor little and low in energy consumption becomes possibility, also becomes the trend of following sensor research simultaneously.
For micro resonance type pressure sensor, the testing pressure that adds not is to directly act on resonator, but the rigidity by the indirect change resonator of pressure membrane, thereby change the resonant frequency of beam, therefore can reach the purpose that detects impressed pressure by the change of resonance frequency that detects beam, belong to the responsive principle of secondary.Its characteristics are that at first, resonator and testing medium are isolated, and its vibrations can not be subjected to the influence of medium.And resonator can be placed in the higher vacuum, thereby can obtain higher quality factor.Secondly, can improve the pressure-sensitivity of sensor, this be because around prop up film admittedly and have the effect that stress amplifies, multiplication factor be proportional to film dimensions and thickness ratio square.Resonance type pressure sensor is the highest pressure sensor of present precision, its indirect gaging pressure of intrinsic frequency by inspected object, the data signal that is as the criterion output, can with the computer direct interface, also form easily and directly show digital instrument.Resonance type pressure sensor is except having good temperature stability, and outside the higher sensitivity, it is fast also to have a response, bandwidth, and compact conformation, low in energy consumption, volume is little, and is in light weight, numerous advantages such as can produce in batches, is the emphasis of various countries' research and development always.The parameter that influences the resonance type pressure sensor performance mainly contains two: the natural resonance frequency of resonance sensing element and the mechanical quality factor Q of harmonic oscillator.The natural resonance frequency of resonance sensing element mainly influences the precision of sensor, natural resonance frequency is high more, the certainty of measurement of resonance type pressure sensor is also just high more, and the natural resonance frequency of material is by the conditional decision of himself, all has nothing to do with extraneous other condition; And the quality factor of harmonic oscillator have mainly reflected the size of damping ratio in the harmonic oscillator vibration and the degree of consumed energy speed, have also reacted the precipitous degree of amplitude-versus-frequency curve simultaneously.The factor that influences harmonic oscillator Q value mainly contains: material self characteristics, processing technology, structure of harmonic oscillator (boundary conditions and encapsulation situation) and environment for use etc.The resonance type pressure sensor of now being developed all is to make resonance beam with the silicon or the compound of silicon, compare with traditional pressure sensor, precision is greatly improved, but continuous development along with science, some industrial application, particularly Xian Dai aerospace field is had higher requirement to the precision of resonance type pressure sensor, and (static excitation of at present external DRUCK company development, the precision of the micro resonance type pressure sensor of capacitor vibration pick-up is better than 0.01%FS.But domestic full accuracy does not also far reach this precision at present, main cause is because make beam with the compound of silicon or silicon, and their natural resonance frequency is not high, thereby can't further improve its certainty of measurement), existing precision can not satisfy their demand for development.
Summary of the invention
The object of the present invention is to provide a kind of microstructure resonant beam pressure sensor that can increase substantially the precision of resonance type pressure sensor.
For achieving the above object, the technical solution used in the present invention is: comprise last silicon chip and lower silicon slice that bonding forms, two peninsulas that last silicon chip comprises a rectangular frame and is opened in the symmetry in the rectangular frame, the two ends of two groups of resonance beam that are arranged side by side of being made by titanium nitride are connected with two peninsulas respectively, on each resonance beam, be respectively arranged with the exciting resistance and the pick-up resistance that link to each other with lead-in wire and electrode, lower silicon slice is one to have the structure of degree of lip-rounding frame, is provided with pressure membrane in degree of lip-rounding frame.
The peninsula of the present invention is opened on the longitudinal midline of rectangular frame; The thickness of degree of lip-rounding frame is the several times of pressure membrane thickness.
Because the present invention adopts the resonance beam of titanium nitride as pressure sensor, titanium nitride (TiN) has quite high natural resonance frequency, uses titanium nitride (TiN) resonance beam can significantly improve the precision of resonance type pressure sensor.And why the natural resonance frequency height can improve certainty of measurement, be because natural resonance frequency is high more, so Dui Ying 0 pressure frequency is mobile also just big more, (precision of sensor is a frequency instability and the ratio of corresponding 0 pressure frequency shifts) precision is also just high more under the suitable situation of frequency instability so, and the present invention adopts the double resonance girder construction, twin-spar construction can obtain two groups of data in identical measurement environment, can reduce measure error greatly by processing, thereby further improve certainty of measurement measurement data.
Description of drawings
Fig. 1 is an overall structure schematic diagram of the present invention;
Fig. 2 is the structure chart of resonance beam 13 of the present invention;
Fig. 3 is a cross sectional representation of the present invention.
The specific embodiment
Below in conjunction with accompanying drawing structural principle of the present invention and operation principle are described in further detail.
Referring to Fig. 1, the present invention includes last silicon chip 11 and lower silicon slice 12 that bonding forms, two peninsulas 14 that last silicon chip 11 comprises a rectangular frame 15 and is opened in the symmetry on rectangular frame 15 longitudinal midlines, the two ends of two groups of resonance beam 13 that are arranged side by side of being made by titanium nitride are connected with two peninsulas 14 respectively, lower silicon slice 12 is one to have the structure of degree of lip-rounding frame 17, is provided with pressure membrane 16 in degree of lip-rounding frame 17.The thickness of degree of lip-rounding frame 17 is several times of pressure membrane 16 thickness.
Referring to Fig. 2, be respectively arranged with on each resonance beam 13 of the present invention and go between 18 and electrode 19 the exciting resistance 20 and the pick-up resistance 21 that link to each other.
Referring to Fig. 3, because upper and lower silicon chip 11,12 is bonded to an integral body, pressure membrane 16 is experienced applied force and is delivered on the resonance beam 13, changed the axial mechanical stress of resonance beam 13, and then changed the rigidity of resonance beam, so just make the natural resonance frequency of resonance beam 13 change, realize pressure measxurement by the change of resonance frequency that detects resonance beam 13.
Resonance beam pressure sensor of the present invention, its resonance beam 13 adopts the electric heating excitation, the mode of pressure drag pick-up: thermal excitation comprises electric heating excitation and photothermal excitation, and they have very big difference on method, but exiting principle is the same, all is distortion and the vibration that causes resonance beam 13 by the diffusion of heat.The electric heating excitation is to apply alternating voltage on exciting resistance 20, makes resonance beam 13 produce the temperature stress of alternation, drives resonance beam 13 vibrations, and when vibration frequency was consistent with the natural resonance frequency of resonance beam 13, resonance beam 13 resonated, and it is maximum that amplitude reaches.Detect the vibration of resonance beam 13 by pick-up resistance 21.Photothermal excitation is to shine on the beam by the optical fiber coupling by the Modulating Diode Laser pulse, beam absorbs laser, produce the thermal stress of the alternation identical with the modulating light pulse frequency, under the effect of this thermal stress, do forced vibration, when pulse frequency equals the natural resonance frequency of beam, beam resonates, and it is maximum that amplitude reaches.Why adopt the electric heating excitation, the pressure drag pick-up, and do not adopt photothermal excitation, be because the electric conductivity of titanium nitride (TiN) is relatively good, and the coefficient of heat conduction is relatively low, therefore be same exciting power with same driving voltage, temperature rise that produces in titanium nitride (TiN) beam and change of resonance frequency are just bigger, thus the sensitivity that helps improving resonance type pressure sensor.
Pick-up is exactly the vibration that detects resonance beam 13 by pick-up resistance 21.Be to utilize the pressure drag pick-up among the present invention.The pressure drag pick-up is to utilize the resistivity of pressure drag material to be subjected to the pressure drag characteristic of its suffered stress modulation, on resonance beam 13, make a piezo-resistance, when resonance beam 13 vibrations, the stress of this piezo-resistance impression can periodically change, the size of stress is directly proportional with the amplitude of beam, and the variation of measuring piezo-resistance can detect vibration of beam.
The present invention uses titanium nitride (TiN) to do the material of resonance beam, not only can improve the precision of resonance type pressure sensor greatly, because titanium nitride (TiN) has the favorable mechanical processing characteristics, this makes the sensing element in the resonance type pressure sensor is very favorable.
Claims (3)
1, microstructure resonant beam pressure sensor, comprise last silicon chip (11) and lower silicon slice (12) that bonding forms, it is characterized in that: two peninsulas (14) that said upward silicon chip (11) comprises a rectangular frame (15) and is opened in the symmetry in the rectangular frame (15), the two ends of the two groups of resonance beam of being made by titanium nitride (13) that are arranged side by side are connected with two peninsulas (14) respectively, on each resonance beam (13), be respectively arranged with the exciting resistance (20) and the pick-up resistance (21) that link to each other with go between (18) and electrode (19), lower silicon slice (12) is one to have the structure of degree of lip-rounding frame (17), is provided with pressure membrane (16) in degree of lip-rounding frame (17).
2, microstructure resonant beam pressure sensor according to claim 1 is characterized in that: the said peninsula (14) are opened on the longitudinal midline of rectangular frame (15).
3, microstructure resonant beam pressure sensor according to claim 1 is characterized in that: the thickness of said degree of lip-rounding frame (17) is the several times of pressure membrane (16) thickness.
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| CNA2008101508788A CN101348233A (en) | 2008-09-09 | 2008-09-09 | Microstructure resonant beam pressure sensor |
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| CNA2008101508788A CN101348233A (en) | 2008-09-09 | 2008-09-09 | Microstructure resonant beam pressure sensor |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN103105248A (en) * | 2013-01-16 | 2013-05-15 | 西安交通大学 | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor |
| CN103115719A (en) * | 2013-01-29 | 2013-05-22 | 中国科学院半导体研究所 | Resonance-type micro electromechanical system wing wind power sensor and manufacturing method thereof |
| CN103335751A (en) * | 2013-06-05 | 2013-10-02 | 厦门大学 | A double-harmonic-oscillator silicon micro pressure transducer and a manufacturing method thereof |
| CN103557970A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Electrostatic excitation/piezoresistance detection miniature silicon resonant pressure sensor and manufacturing method thereof |
| CN103557967A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance mode pressure sensor core and manufacturing method |
| CN106124111A (en) * | 2016-08-19 | 2016-11-16 | 国网河南省电力公司电力科学研究院 | Transformer high-voltage bushing end Cornu Caprae seu Ovis type gold utensil static tensile force measures system and method |
| CN106203307A (en) * | 2016-06-30 | 2016-12-07 | 联想(北京)有限公司 | A kind of sensor and electronic equipment |
| CN106918420A (en) * | 2017-04-21 | 2017-07-04 | 北京航空航天大学 | A kind of pair of Graphene resonance beam type pressure sensor |
| CN108388749A (en) * | 2018-03-16 | 2018-08-10 | 大连理工大学 | A kind of microstructure design method of the capacitive pressure transducer with micro-structure dielectric layer |
| CN108557753A (en) * | 2018-04-26 | 2018-09-21 | 苏州纳芯微电子股份有限公司 | A kind of islands MEMS-beam-film device and preparation method thereof |
| CN108801534A (en) * | 2017-05-03 | 2018-11-13 | 珠海全志科技股份有限公司 | Based on the sensitive resonant mode gas pressure sensor of damping |
| WO2020228738A1 (en) * | 2019-05-13 | 2020-11-19 | 西人马联合测控（泉州）科技有限公司 | Pressure-sensitive element, preparation method for pressure-sensitive element, and pressure sensor |
| CN113465791A (en) * | 2021-06-17 | 2021-10-01 | 西安交通大学 | Resonant pressure sensor and preparation method thereof |
| CN115790913A (en) * | 2023-02-08 | 2023-03-14 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement precision |
-
2008
- 2008-09-09 CN CNA2008101508788A patent/CN101348233A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809450B (en) * | 2012-08-09 | 2014-08-27 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN103105248A (en) * | 2013-01-16 | 2013-05-15 | 西安交通大学 | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor |
| CN103115719A (en) * | 2013-01-29 | 2013-05-22 | 中国科学院半导体研究所 | Resonance-type micro electromechanical system wing wind power sensor and manufacturing method thereof |
| CN103335751A (en) * | 2013-06-05 | 2013-10-02 | 厦门大学 | A double-harmonic-oscillator silicon micro pressure transducer and a manufacturing method thereof |
| CN103335751B (en) * | 2013-06-05 | 2015-11-11 | 厦门大学 | A kind of double-harmonic oscillator silicon micropressure sensor and preparation method thereof |
| CN103557970A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Electrostatic excitation/piezoresistance detection miniature silicon resonant pressure sensor and manufacturing method thereof |
| CN103557967A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance mode pressure sensor core and manufacturing method |
| CN103557970B (en) * | 2013-11-22 | 2015-05-13 | 中国电子科技集团公司第四十九研究所 | Electrostatic excitation/piezoresistance detection miniature silicon resonant pressure sensor and manufacturing method thereof |
| CN103557967B (en) * | 2013-11-22 | 2015-06-10 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance mode pressure sensor core and manufacturing method |
| CN106203307B (en) * | 2016-06-30 | 2020-01-31 | 联想(北京)有限公司 | kinds of sensors and electronic equipment |
| CN106203307A (en) * | 2016-06-30 | 2016-12-07 | 联想(北京)有限公司 | A kind of sensor and electronic equipment |
| CN106124111A (en) * | 2016-08-19 | 2016-11-16 | 国网河南省电力公司电力科学研究院 | Transformer high-voltage bushing end Cornu Caprae seu Ovis type gold utensil static tensile force measures system and method |
| CN106124111B (en) * | 2016-08-19 | 2018-10-23 | 国网河南省电力公司电力科学研究院 | Transformer high-voltage bushing end goat's horn type gold utensil static tensile force measuring system and method |
| CN106918420A (en) * | 2017-04-21 | 2017-07-04 | 北京航空航天大学 | A kind of pair of Graphene resonance beam type pressure sensor |
| CN108801534A (en) * | 2017-05-03 | 2018-11-13 | 珠海全志科技股份有限公司 | Based on the sensitive resonant mode gas pressure sensor of damping |
| CN108801534B (en) * | 2017-05-03 | 2020-12-08 | 珠海全志科技股份有限公司 | Resonance type gas pressure sensor based on damping sensitivity |
| CN108388749A (en) * | 2018-03-16 | 2018-08-10 | 大连理工大学 | A kind of microstructure design method of the capacitive pressure transducer with micro-structure dielectric layer |
| CN108557753A (en) * | 2018-04-26 | 2018-09-21 | 苏州纳芯微电子股份有限公司 | A kind of islands MEMS-beam-film device and preparation method thereof |
| WO2020228738A1 (en) * | 2019-05-13 | 2020-11-19 | 西人马联合测控（泉州）科技有限公司 | Pressure-sensitive element, preparation method for pressure-sensitive element, and pressure sensor |
| CN113465791A (en) * | 2021-06-17 | 2021-10-01 | 西安交通大学 | Resonant pressure sensor and preparation method thereof |
| CN113465791B (en) * | 2021-06-17 | 2022-05-20 | 西安交通大学 | Resonant pressure sensor and preparation method thereof |
| CN115790913A (en) * | 2023-02-08 | 2023-03-14 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement precision |
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