CN102243251B - Micromechanical silicon resonant accelerometer with different resonant frequencies - Google Patents
Micromechanical silicon resonant accelerometer with different resonant frequencies Download PDFInfo
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- CN102243251B CN102243251B CN201110103335A CN201110103335A CN102243251B CN 102243251 B CN102243251 B CN 102243251B CN 201110103335 A CN201110103335 A CN 201110103335A CN 201110103335 A CN201110103335 A CN 201110103335A CN 102243251 B CN102243251 B CN 102243251B
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Abstract
The invention discloses a micromechanical silicon resonant accelerometer with different resonant frequencies. The accelerometer is characterized by comprising a glass substrate, a lead wire layer, a bonding layer and a silicon structure layer, wherein the lowermost layer is the glass substrate, metal is sputtered on the upper surface of the glass substrate to serve as the lead wire layer, and the silicon structure layer is suspended above the glass substrate through the bonding layer; the silicon structure layer comprises an upper mass block (1a), a lower mass block (1b) connected with the upper mass block (1a), a first folding beam (6a) and a second folding beam (6b); and the upper mass block (1a) and the lower mass block (1b) are symmetrically arranged relative to the horizontal shaft of the silicon structure layer, and are connected through the first folding beam (6a) and the second folding beam (6b). The micromechanical silicon resonant accelerometer with different resonant frequencies provided by the invention can be used for eliminating the influence of mode coupling within a full scale range, removing a measuring dead area, releasing residual stress generated in a structure processing process, and reducing the stress generated by material thermal expansion.
Description
Technical field
The present invention relates to the silicon micro-acceleration inertial sensor in the MEMS (MEMS).
Background technology
Silicon micro accerometer is a kind of typical MEMS (Micro Electromechanical system; MEMS) inertial sensor, its processing technology and microelectronic processing technique are compatible, can realize producing in batches; Have that volume is little, in light weight, cost is low, energy consumption is low, reliability is high, be easy to intellectuality and digitizing; Can satisfy characteristics such as severe environment applications, be one of focus direction of current accelerometer development, and important military value and civilian widely prospect are arranged.
Be different from general capacitance detecting formula accelerometer, silicon micro-resonance type accelerometer is through detecting the size that the resonance frequency variable quantity obtains input acceleration.Its essential characteristic is the frequency signal of the accurate digital signal of output, is easy to detect, anti-interference is good, in transmission and processing procedure, also is not prone to error.
At present, silicon micro-resonance type accelerometer generally is made up of resonator and mass, and two resonator dimensions are identical, and adjacent up and down symmetric arrangement, overcome material inhomogeneous with the influence of environment temperature to device.Two resonator dimensions are identical, and two resonator fundamental frequencies are identical in theory, and under the effect of extraneous acceleration load, a resonance frequency raises, and another resonance frequency reduces.But, when the acceleration load in the external world very little---at positive and negative several milli g (1g=9.8 m/s
2) when scope was interior, two resonators produced once per revolution vibrations, promptly two resonators produce modal coupling through same mass, can not measure the acceleration of input this moment, and the blind area is measured in formation.
Silicon micro-resonance type accelerometer changes next responsive input acceleration size through survey frequency; Temperature variation not only can cause elastic modulus to change; And then cause the resonant frequency drift, and can cause structure and encapsulation stress to change, also can cause the variation of resonant frequency and quality factor.Therefore, suppress resonator temperature susceptibility and could realize higher bias stability.
Summary of the invention
Technical matters:The present invention proposes a kind of fundamental frequency silicon micro-resonance type accelerometer that do not wait, and the technical matters of solution is in the gamut scope of accelerometer, to eliminate the influence of modal coupling, removes and measures the blind area; Unrelieved stress that produces in the releasing structure process and the stress that reduces to produce owing to material heat expansion.
Technical scheme:For solving the problems of the technologies described above; This accelerometer comprises substrate of glass, trace layer, bonded layer and silicon structure layer; Orlop is a substrate of glass,, is suspended in the silicon structure layer on the substrate of glass through bonded layer as trace layer at the upper surface splash-proofing sputtering metal of substrate of glass; Wherein the silicon structure layer comprises the piece of improving quality, the following mass that links to each other with the piece of improving quality, first folded beam, second folded beam; The piece of improving quality is identical with following mass; Improve quality piece and following mass placed about silicon structure layer transverse axis symmetry, and in continuous through first folded beam, second folded beam; The silicon structure layer also comprises last resonator, the first one-level lever enlarger, the 4th one-level lever enlarger, first brace summer and the 4th brace summer that are used to support the silicon structure layer, the first anchor district that is positioned at the piece upper right corner of improving quality that is arranged in the piece of improving quality, the 4th anchor district that is positioned at the piece upper left corner of improving quality; Wherein, the first one-level lever enlarger and the 4th one-level lever enlarger are placed about silicon structure layer Z-axis symmetry, and the first one-level lever enlarger is connected with the piece of improving quality respectively with the 4th one-level lever enlarger upper end, and the lower end links to each other with last resonator; Improve quality piece upper end is connected respectively in the first anchor district, the 4th anchor district through first brace summer and the 4th brace summer respectively; The silicon structure layer also comprises following resonator, the second one-level lever enlarger, the 3rd one-level lever enlarger, second brace summer that is used to support the silicon structure layer, the 3rd brace summer that is arranged on down in the mass, be positioned at the following mass lower right corner the second anchor district, be positioned at the 3rd anchor district in the mass lower left corner down; Wherein, the second one-level lever enlarger and the 3rd one-level lever enlarger are placed about silicon structure layer Z-axis symmetry, and the second one-level lever enlarger is connected with following mass with the 3rd one-level lever enlarger lower end, and the upper end links to each other with following resonator; Following mass is connected respectively in the second anchor district, the 3rd anchor district through second brace summer and the 3rd brace summer; First brace summer and second brace summer, the 3rd brace summer and the 4th brace summer, the first anchor district and the second anchor district, the 3rd anchor district and the 4th anchor district are symmetrical about the transverse axis of silicon structure layer respectively; First brace summer and the 4th brace summer, second brace summer and the 3rd brace summer, the first anchor district and the 4th anchor district, the second anchor district and the 3rd anchor district are symmetrical about the Z-axis of silicon structure layer respectively.
Preferably; The first one-level lever enlarger comprises the first input beam, first lever arm, the first fulcrum beam, first output beam and the 5th anchor district; Wherein, the first input beam, the first fulcrum beam and the first output beam are connected respectively on first lever arm, and the first input beam is positioned at the top of first lever arm; The first fulcrum beam, the first output beam are positioned at the below of first lever arm; The first fulcrum beam is between the first input beam, the first output beam in the horizontal direction, and the first fulcrum beam is connected to the 5th anchor district, and the 5th anchor district is positioned at the below of the first fulcrum beam; The 4th one-level lever enlarger comprises the 4th input beam, the 4th lever arm, the 4th fulcrum beam, the 4th output beam and the 8th anchor district; Wherein, The 4th input beam, the 4th fulcrum beam and the 4th output beam are connected respectively on the 4th lever arm; The 4th input beam is positioned at the top of the 4th lever arm, and the 4th fulcrum beam, the 4th output beam are positioned at the below of the 4th lever arm, and the 4th fulcrum beam is between the 4th input beam, the 4th output beam in the horizontal direction; The 4th fulcrum beam is connected to the 8th anchor district, and the 8th anchor district is positioned at the below of the 4th fulcrum beam; The first one-level lever enlarger and the 4th one-level lever enlarger upper end are connected to the piece of improving quality through the first input beam and the 4th input beam, and the lower end is connected on the resonator through the first output beam, the 4th output beam; The second one-level lever enlarger comprises the second input beam, second lever arm, the second fulcrum beam, second output beam and the 6th anchor district; Wherein, The second input beam, the second fulcrum beam and the second output beam are connected respectively on second lever arm; The second input beam is positioned at the below of second lever arm, and the second fulcrum beam, the second output beam are positioned at the top of second lever arm, and the second fulcrum beam is between the second input beam, the second output beam in the horizontal direction; The second fulcrum beam is connected to the 6th anchor district, and the 6th anchor district is positioned at the top of the second fulcrum beam; The 3rd one-level lever enlarger comprises the 3rd input beam, the 3rd lever arm, the 3rd fulcrum beam, the 3rd output beam and the 7th anchor district; Wherein, The 3rd input beam, the 3rd fulcrum beam and the 3rd output beam are connected respectively on the 3rd lever arm; The 3rd input beam is positioned at the below of the 3rd lever arm, and the 3rd fulcrum beam, the 3rd output beam are positioned at the top of the 3rd lever arm, and the 3rd fulcrum beam is between the 3rd input beam, the 3rd output beam in the horizontal direction; The 3rd fulcrum beam is connected to the 7th anchor district, and the 7th anchor district is positioned at the top of the 3rd fulcrum beam;
The second one-level lever enlarger and the 3rd one-level lever enlarger lower end are connected to down mass through the second input beam and the 3rd input beam, and the upper end is connected to down on the resonator through the second output beam, the 3rd output beam.
Preferably, this accelerometer comprises identical piece and the following mass of improving quality, and last resonator and following resonator are respectively in the centre of improving quality piece and following mass.
Preferably, last resonator and following resonator varies in size.
Preferably; Improve quality piece upper end is connected in the first anchor district, the 4th anchor district through first brace summer, the 4th brace summer respectively; Following mass lower end is connected in the second anchor district, the 3rd anchor district through second brace summer, the 3rd brace summer respectively, makes the silicon structure layer be suspended in the top of substrate of glass.
Beneficial effect:
(1) two resonator resonant frequency is different, transfer to coupling regime outside the gamut scope, thereby the influence of elimination modal coupling is removed and measured the blind area;
(2) realization that does not wait fundamental frequency realizes through two resonators beam size difference of shaking;
(3) two masses are identical, middle link together through folded beam, the unrelieved stress that produces in can the releasing structure process with reduce because the stress that material heat expansion produces reduces coupling range simultaneously.
Link to each other through folded beam in the middle of (4) two masses, the constant multiplier whole to accelerometer can not exert an influence;
(5) the one-level thick stick amplifies in the linkage, and fulcrum beam and output beam are positioned at the same side (below or top) of lever arm, the input beam be positioned at lever arm opposite side (above or below), under condition in proportion, improved enlargement factor;
(6) quality of additional broach only on the beam that shakes of resonator has reduced the quality of tooth pivot, and the power that has improved resonator is characteristic frequently, has increased whole sensitivity.
Description of drawings
Fig. 1 is a kind of planar structure synoptic diagram that does not wait the fundamental frequency silicon micro-resonance type accelerometer of the present invention;
Fig. 2 is a resonator structure synoptic diagram of the present invention;
Fig. 3 a is resonance frequency---the acceleration plots of traditional silicon micro-resonance type accelerometer, and coupling regime exists and measures the blind area within range ability;
Fig. 3 b figure is the effect that the present invention realized, coupling regime is outside the gamut scope, and wherein the rectangular area is a coupling regime.
Improve quality piece 1a, following mass 1b, last resonator 2a, time resonator 2b, the first one-level lever enlarger 3a, the second one-level lever enlarger 3b, the 3rd one-level lever enlarger 3c, the 4th one-level lever enlarger 3d; The first brace summer 4a, the second brace summer 4b, the 3rd brace summer 4c, the 4th brace summer 4d; The first anchor district 5a, the second anchor district 5b, the 3rd anchor district 5c, the 4th anchor district 5d, the first folded beam 6a, the second folded beam 6b, the first input beam 7a, the second input beam 7b, the 3rd input beam 7c, the 4th input beam 7d; The first lever arm 8a, the second lever arm 8b, the 3rd lever arm 8c, the 4th lever arm 8d; The first fulcrum beam 9a, the second fulcrum beam 9b, the 3rd fulcrum beam 9c, the 4th fulcrum beam 9d, the first output beam 10a, the second output beam 10b, the 3rd output beam 10c, the 4th output beam 10d, the 5th anchor district 11a, the 6th anchor district 11b, the 7th anchor district 11c, the 8th anchor district 11d; The 9th anchor district 12; The first pencil stub 13a, the second pencil stub 13b, the first link 14a, the second link 14b, first beam 15a, the second beam 15b that shakes that shakes; The first moving tooth 16a, the second moving tooth 16b; First decides tooth 17a, second decides tooth 17b, the 3rd and decides tooth 17c, the 4th and decide tooth 17d, the first detecting electrode 18a, the second detecting electrode 18b, drive electrode 19.
Embodiment
This accelerometer comprises substrate of glass, trace layer, bonded layer and silicon structure layer, and orlop is a substrate of glass,, is suspended in the silicon structure layer on the substrate of glass through bonded layer as trace layer at the upper surface splash-proofing sputtering metal of substrate of glass.
The present invention proposes does not wait the fundamental frequency silicon micro-resonance type accelerometer, is made up of substrate of glass, trace layer, bonded layer and silicon structure layer.Wherein the silicon structure layer comprises the piece of improving quality, descends mass, goes up resonator, descends resonator, one-level lever enlarger, brace summer, anchor district several sections; Two masses are identical up and down, and middle continuous through two folded beams, the outer end is connected in the anchor district through brace summer respectively; Two resonators lay respectively at the centre of two masses up and down, and an end is connected the output beam of leverage, and the other end is connected in the anchor district; The beam size of shaking of two resonators is different, thereby draws back the fundamental frequency of two resonators; Four one-level lever enlargers, wherein the output beam of leverage and fulcrum beam are positioned at the same side (below or top) of lever arm, the input beam be positioned at lever arm opposite side (above or below); When acceleration is imported; Mass changes into inertial force to acceleration; The inertial force that is amplified by leverage will be applied on the resonator; Cause a resonator resonance frequency to increase, another resonator resonance frequency reduces, and just can obtain the input acceleration size through the resonance frequency difference of measuring two resonators.
Referring to Fig. 1-3b; Wherein the silicon structure layer comprises the piece 1a that improves quality, the following mass 1b that links to each other with the piece 1a that improves quality, the first folded beam 6a, the second folded beam 6b; The piece 1a that improves quality is identical with following mass 1b, places about silicon structure layer transverse axis symmetry, and the middle first folded beam 6a of passing through, the second folded beam 6b link to each other; The unrelieved stress that produces in can the releasing structure process with reduce because the stress that material heat expansion produces; Reducing coupling range simultaneously, and, can not exert an influence to the constant multiplier of integral body; The silicon structure layer also comprises the last resonator 2a, the first one-level lever enlarger 3a, the 4th one-level lever enlarger 3d that are arranged among the piece 1a that improves quality, be used to support the first brace summer 4a and the 4th brace summer 4d, the first anchor district 5a, the 4th anchor district 5d of silicon structure layer; Wherein, The first one-level lever enlarger 3a and the 4th one-level lever enlarger 3d place about silicon structure layer Z-axis symmetry; The first one-level lever enlarger 3a is connected with the piece 1a that improves quality with the 4th one-level lever enlarger 3d upper end, and the lower end links to each other with last resonator 2a; Improve quality piece 1a upper end is connected on the 4th anchor district 5d in the first anchor district 5a that is positioned at the piece 1a upper right corner of improving quality, the upper left corner through the first brace summer 4a and the 4th brace summer 4d respectively; The silicon structure layer also comprises following resonator 2b, the second one-level lever enlarger 3b, the 3rd one-level lever enlarger 3c, the second brace summer 4b that is used to support the silicon structure layer, the 3rd brace summer 4c that is arranged on down among the mass 1b, the second anchor district 5b, the 3rd anchor district 5c; Wherein, The second one-level lever enlarger 3b and the 3rd one-level lever enlarger 3c place about silicon structure layer Z-axis symmetry; The second one-level lever enlarger 3b is connected with following mass 1b with the 3rd one-level lever enlarger 3c lower end, and the upper end links to each other with following resonator 2b; Following mass 1b is connected on the 3rd anchor district 5c in the second anchor district 5b that is positioned at the following mass 1b lower right corner, the lower left corner through the second brace summer 4b and the 3rd brace summer 4c; Improve quality piece 1a upper end is connected on the first anchor district 5a, the 4th anchor district 5d through the first brace summer 4a, the 4th brace summer 4d respectively; Following mass 1b lower end is connected on the second anchor district 5b, the 3rd anchor district 5c through the second brace summer 4b, the 3rd brace summer 4c respectively, makes the silicon structure layer be suspended in the top of substrate of glass.
The first one-level lever enlarger 3a comprises the first input beam 7a, the first lever arm 8a, the first fulcrum beam 9a, first output beam 10a and the 5th anchor district 11a; Wherein, The first input beam 7a, the first fulcrum beam 9a and the first output beam 10a are connected respectively on the first lever arm 8a; The first input beam 7a is positioned at the top of the first lever arm 8a, and the first fulcrum beam 9a, the first output beam 10a are positioned at the below of the first lever arm 8a, and the first fulcrum beam 9a is between the first input beam 7a, the first output beam 10a in the horizontal direction; The first fulcrum beam 9a is connected to the 5th anchor district 11a, and the 5th anchor district 11a is positioned at the below of the first fulcrum beam 9a; The 4th one-level lever enlarger 3d comprises the 4th input beam 7d, the 4th lever arm 8d, the 4th fulcrum beam 9d, the 4th output beam 10d and the 8th anchor district 11d; Wherein, The 4th input beam 7d, the 4th fulcrum beam 9d and the 4th output beam 10d are connected respectively on the 4th lever arm 8d; The 4th input beam 7d is positioned at the top of the 4th lever arm 8d, and the 4th fulcrum beam 9d, the 4th output beam 10d are positioned at the below of the 4th lever arm 8d, and the 4th fulcrum beam 9d is between the 4th input beam 7d, the 4th output beam 10d in the horizontal direction; The 4th fulcrum beam 9d is connected to the 8th anchor district 11d, and the 8th anchor district 11d is positioned at the below of the 4th fulcrum beam 9d; The first one-level lever enlarger 3a and the 4th one-level lever enlarger 3d upper end are connected to the piece 1a that improves quality through the first input beam 7a and the 4th input beam 7d, and the lower end is connected on the resonator 2a through the first output beam 10a, the 4th output beam 10d; The second one-level lever enlarger 3b comprises the second input beam 7b, the second lever arm 8b, the second fulcrum beam 9b, second output beam 10b and the 6th anchor district 11b; Wherein, The second input beam 7b, the second fulcrum beam 9b and the second output beam 10b are connected respectively on the second lever arm 8b; The second input beam 7b is positioned at the below of the second lever arm 8b, and the second fulcrum beam 9b, the second output beam 10b are positioned at the top of the second lever arm 8b, and the second fulcrum beam 9b is between the second input beam 7b, the second output beam 10b in the horizontal direction; The second fulcrum beam 9b is connected to the 6th anchor district 11b, and the 6th anchor district 11b is positioned at the top of the second fulcrum beam 9b; The 3rd one-level lever enlarger 3c comprises the 3rd input beam 7c, the 3rd lever arm 8c, the 3rd fulcrum beam 9c, the 3rd output beam 10c and the 7th anchor district 11c; Wherein, The 3rd input beam 7c, the 3rd fulcrum beam 9c and the 3rd output beam 10c are connected respectively on the 3rd lever arm 8c; The 3rd input beam 7c is positioned at the below of the 3rd lever arm 8c, and the 3rd fulcrum beam 9c, the 3rd output beam 10c are positioned at the top of the 3rd lever arm 8c, and the 3rd fulcrum beam 9c is between the 3rd input beam 7c, the 3rd output beam 10c in the horizontal direction; The 3rd fulcrum beam 9c is connected to the 7th anchor district 11c, and the 7th anchor district 11c is positioned at the top of the 3rd fulcrum beam 9c; The second one-level lever enlarger 3b and the 3rd one-level lever enlarger 3c lower end are connected to down mass 1b through the second input beam 7b and the 3rd input beam 7c, and the upper end is connected to down on the resonator 2b through the second output beam 10b, the 3rd output beam 10c.
The first fulcrum beam 9a of the first one-level lever enlarger 3a, the second one-level lever enlarger 3b, the 3rd one-level lever enlarger 3c the 4th one-level lever enlarger 3d, the second fulcrum beam 9b, the 3rd fulcrum beam 9c, the 4th fulcrum beam 9d and the first output beam 10a, the second output beam 10b, the 3rd output beam 10c, the 4th output beam 10d lay respectively at the first lever arm 8a, the second lever arm 8b, the 3rd lever arm 8c, the 4th lever arm 8d the same side (above or below); Under condition in proportion; With the first fulcrum beam 9a, the second fulcrum beam 9b, the 3rd fulcrum beam 9c, the 4th fulcrum beam 9d and the first output beam 10a, the second output beam 10b, the 3rd output beam 10c, the 4th output beam 10d lay respectively at the first lever arm 8a, the second lever arm 8b, the 3rd lever arm 8c, the 4th lever arm 8d heteropleural (above or below) compare, improved enlargement factor.
The first brace summer 4a and the second brace summer 4b, the 3rd brace summer 4c and the 4th brace summer 4d, the first anchor district 5a and the second anchor district 5b, the 3rd anchor district 5c and the 4th anchor district 5d place about the transverse axis symmetry of silicon structure layer respectively; The first brace summer 4a and the 4th brace summer 4d, the second brace summer 4b and the 3rd brace summer 4c, the first anchor district 5a and the 4th anchor district 5d, the second anchor district 5b and the 3rd anchor district 5c place about the Z-axis symmetry of silicon structure layer respectively; Improve quality piece 1a upper end is connected on the first anchor district 5a, the 4th anchor district 5d through the first brace summer 4a, the 4th brace summer 4d respectively; Following mass 1b lower end is connected on the second anchor district 5b, the 3rd anchor district 5c through the second brace summer 4b, the 3rd brace summer 4c respectively, makes the silicon structure layer be suspended in the top of substrate of glass.
Principle of work of the present invention: piece 1a converts acceleration load to inertial force with following mass 1b through improving quality; The first input beam 7a, the second input beam 7b, the 3rd input beam 7c, the 4th that inertial force affacts the first one-level lever enlarger 3a, the second one-level lever enlarger 3b, the 3rd one-level lever enlarger 3c, the 4th one-level lever enlarger 3d import on the beam 7d; Through affacting on resonator 2a and the following resonator 2b after amplifying; Make a resonator receive pulling force; Another resonator is under pressure, thereby resonance frequency is increased respectively and reduces, and obtains the size of acceleration load according to frequency difference.
In sum; A kind of fundamental frequency silicon micro-resonance type accelerometer that do not wait provided by the invention; Dwindled the scope of coupling; And transfer to coupling regime outside the gamut scope, removed the measurement blind area, discharged unrelieved stress that produces in the structure process and the stress that reduces to produce simultaneously owing to material heat expansion.
Claims (3)
1. one kind is not waited the fundamental frequency silicon micro-resonance type accelerometer; It is characterized in that: this accelerometer comprises substrate of glass, trace layer, bonded layer and silicon structure layer; Orlop is a substrate of glass;, be suspended in the silicon structure layer on the substrate of glass as trace layer at the upper surface splash-proofing sputtering metal of substrate of glass through bonded layer;
Wherein the silicon structure layer comprises the piece of improving quality (1a), the following mass (1b) that links to each other with the piece of improving quality (1a), first folded beam (6a), second folded beam (6b); Improve quality piece (1a) and following mass (1b) placed about silicon structure layer transverse axis symmetry, and in continuous through first folded beam (6a), second folded beam (6b);
The silicon structure layer also comprises last resonator (2a), the first one-level lever enlarger (3a), the 4th one-level lever enlarger (3d), first brace summer (4a) and the 4th brace summer (4d) that are used to support the silicon structure layer, the first anchor district (5a) that is positioned at the piece of improving quality (1a) upper right corner that is arranged in the piece of improving quality (1a), the 4th anchor district (5d) that is positioned at the piece of improving quality (1a) upper left corner; Wherein, The first one-level lever enlarger (3a) and the 4th one-level lever enlarger (3d) are placed about silicon structure layer Z-axis symmetry; The first one-level lever enlarger (3a) is connected with the piece of improving quality (1a) respectively with the 4th one-level lever enlarger (3d) upper end, and the lower end links to each other with last resonator (2a); Improve quality piece (1a) upper end is connected respectively in the first anchor district (5a), the 4th anchor district (5d) through first brace summer (4a) and the 4th brace summer (4d) respectively;
The silicon structure layer also comprises following resonator (2b), the second one-level lever enlarger (3b), the 3rd one-level lever enlarger (3c), second brace summer (4b) that is used to support the silicon structure layer, the 3rd brace summer (4c) that is arranged on down in the mass (1b), be positioned at following mass (1b) lower right corner the second anchor district (5b), be positioned at the 3rd anchor district (5c) in mass (1b) lower left corner down; Wherein, The second one-level lever enlarger (3b) and the 3rd one-level lever enlarger (3c) are placed about silicon structure layer Z-axis symmetry; The second one-level lever enlarger (3b) is connected with following mass (1b) with the 3rd one-level lever enlarger (3c) lower end, and the upper end links to each other with following resonator (2b); Following mass (1b)) is connected respectively in the second anchor district (5b), the 3rd anchor district (5c) through second brace summer (4b) and the 3rd brace summer (4c);
First brace summer (4a) and second brace summer (4b), the 3rd brace summer (4c) and the 4th brace summer (4d), the first anchor district (5a) and the second anchor district (5b), the 3rd anchor district (5c) and the 4th anchor district (5d) are symmetrical about the transverse axis of silicon structure layer respectively;
First brace summer (4a) and the 4th brace summer (4d), second brace summer (4b) and the 3rd brace summer (4c), the first anchor district (5a) and the 4th anchor district (5d), the second anchor district (5b) and the 3rd anchor district (5c) are symmetrical about the Z-axis of silicon structure layer respectively;
This accelerometer comprises identical piece of improving quality (1a) and following mass (1b), and last resonator (2a) and following resonator (2b) are respectively in the centre of piece of improving quality (1a) and following mass (1b);
Last resonator (2a) and following resonator (2b) vary in size.
2. the fundamental frequency silicon micro-resonance type accelerometer that do not wait according to claim 1 is characterized in that:
The first one-level lever enlarger (3a) comprises the first input beam (7a), first lever arm (8a), the first fulcrum beam (9a), first output beam (10a) and the 5th anchor district (11a),
Wherein, The first input beam (7a), the first fulcrum beam (9a) and the first output beam (10a) are connected respectively on first lever arm (8a); The first input beam (7a) is positioned at the top of first lever arm (8a); The first fulcrum beam (9a), the first output beam (10a) are positioned at the below of first lever arm (8a); The first fulcrum beam (9a) is between the first input beam (7a), the first output beam (10a) in the horizontal direction, and the first fulcrum beam (9a) is connected to the 5th anchor district (11a), and the 5th anchor district (11a) is positioned at the below of the first fulcrum beam (9a);
The 4th one-level lever enlarger (3d) comprises the 4th input beam (7d), the 4th lever arm (8d), the 4th fulcrum beam (9d), the 4th output beam (10d) and the 8th anchor district (11d),
Wherein, The 4th input beam (7d), the 4th fulcrum beam (9d) and the 4th output beam (10d) are connected respectively on the 4th lever arm (8d); The 4th input beam (7d) is positioned at the top of the 4th lever arm (8d); The 4th fulcrum beam (9d), the 4th output beam (10d) are positioned at the below of the 4th lever arm (8d); The 4th fulcrum beam (9d) is between the 4th input beam (7d), the 4th output beam (10d) in the horizontal direction, and the 4th fulcrum beam (9d) is connected to the 8th anchor district (11d), and the 8th anchor district (11d) is positioned at the below of the 4th fulcrum beam (9d);
The first one-level lever enlarger (3a) and the 4th one-level lever enlarger (3d) upper end are connected to the piece of improving quality (1a) through the first input beam (7a) and the 4th input beam (7d), and the lower end is connected on the resonator (2a) through the first output beam (10a), the 4th output beam (10d);
The second one-level lever enlarger (3b) comprises the second input beam (7b), second lever arm (8b), the second fulcrum beam (9b), second output beam (10b) and the 6th anchor district (11b),
Wherein, The second input beam (7b), the second fulcrum beam (9b) and the second output beam (10b) are connected respectively on second lever arm (8b); The second input beam (7b) is positioned at the below of second lever arm (8b); The second fulcrum beam (9b), the second output beam (10b) are positioned at the top of second lever arm (8b); The second fulcrum beam (9b) is between the second input beam (7b), the second output beam (10b) in the horizontal direction, and the second fulcrum beam (9b) is connected to the 6th anchor district (11b), and the 6th anchor district (11b) is positioned at the top of the second fulcrum beam (9b);
The 3rd one-level lever enlarger (3c) comprises the 3rd input beam (7c), the 3rd lever arm (8c), the 3rd fulcrum beam (9c), the 3rd output beam (10c) and the 7th anchor district (11c); Wherein, The 3rd input beam (7c), the 3rd fulcrum beam (9c) and the 3rd output beam (10c) are connected respectively on the 3rd lever arm (8c); The 3rd input beam (7c) is positioned at the below of the 3rd lever arm (8c); The 3rd fulcrum beam (9c), the 3rd output beam (10c) are positioned at the top of the 3rd lever arm (8c); The 3rd fulcrum beam (9c) is between the 3rd input beam (7c), the 3rd output beam (10c) in the horizontal direction, and the 3rd fulcrum beam (9c) is connected to the 7th anchor district (11c), and the 7th anchor district (11c) is positioned at the top of the 3rd fulcrum beam (9c);
The second one-level lever enlarger (3b) and the 3rd one-level lever enlarger (3c) lower end are connected to down mass (1b) through the second input beam (7b) and the 3rd input beam (7c), and the upper end is connected to down on the resonator (2b) through the second output beam (10b), the 3rd output beam (10c).
3. the fundamental frequency silicon micro-resonance type accelerometer that do not wait according to claim 1; It is characterized in that: the piece of improving quality (1a) upper end is connected in the first anchor district (5a), the 4th anchor district (5d) through first brace summer (4a), the 4th brace summer (4d) respectively; Following mass (1b) lower end is connected in the second anchor district (5b), the 3rd anchor district (5c) through second brace summer (4b), the 3rd brace summer (4c) respectively, makes the silicon structure layer be suspended in the top of substrate of glass.
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| CN103913595B (en) * | 2014-04-02 | 2016-05-18 | 清华大学 | Three axle integrated silicone micro-resonance type accelerometers |
| CN103901225B (en) * | 2014-04-02 | 2016-04-27 | 清华大学 | Silicon micro-resonance type accelerometer |
| CN104374953A (en) * | 2014-11-25 | 2015-02-25 | 东南大学 | Split type differential silicon micro resonant accelerometer |
| CN105258688B (en) * | 2015-10-30 | 2017-12-22 | 北京航天控制仪器研究所 | The micro- Micromachined Accelerometer Based on Resonant Principle of silicon with temperature stress compensation and vibration uncoupling ability |
| CN105606845A (en) * | 2015-12-23 | 2016-05-25 | 北京航空航天大学 | Dual-mass-block high sensitivity silicon micro resonant accelerometer structure based on two-level micro-levers |
| CN106199070B (en) * | 2016-06-24 | 2019-10-11 | 东南大学 | Single anchor points support formula silicon micro-resonance type accelerometer |
| CN106629571B (en) * | 2016-09-20 | 2019-04-09 | 西北工业大学 | A kind of weak coupling MEMS resonant formula accelerometer based on mode localization effect |
| CN107688103A (en) * | 2017-07-31 | 2018-02-13 | 北京航空航天大学 | A kind of single-axis accelerometer based on graphene resonance characteristic |
| CN108490216A (en) * | 2018-01-31 | 2018-09-04 | 嘉兴市纳杰微电子技术有限公司 | A kind of silicon micro-resonance type accelerometer |
| CN109001490B (en) * | 2018-06-22 | 2021-02-26 | 中国人民解放军国防科技大学 | High-sensitivity torsional pendulum type silicon micro-accelerometer and preparation method thereof |
| CN109946480B (en) * | 2019-03-06 | 2020-08-14 | 东南大学 | High-precision photo-force accelerometer based on zipper type photonic crystal micro-nano cavity |
| CN111812355B (en) * | 2019-04-10 | 2022-07-12 | 北京大学 | Low stress sensitivity silicon micro resonant accelerometer structure |
| US11287441B2 (en) | 2019-11-07 | 2022-03-29 | Honeywell International Inc. | Resonator including one or more mechanical beams with added mass |
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| US5969249A (en) * | 1997-05-07 | 1999-10-19 | The Regents Of The University Of California | Resonant accelerometer with flexural lever leverage system |
| CN1844931A (en) * | 2006-05-23 | 2006-10-11 | 北京航空航天大学 | Resonance type micromechanical accelerometer |
| US8171804B2 (en) * | 2006-12-22 | 2012-05-08 | Texas Instruments Incorporated | Motion conversion system |
| CN101266259B (en) * | 2008-05-08 | 2010-12-08 | 南京理工大学 | Silicon micro-resonance type accelerometer |
| CN101303234A (en) * | 2008-05-22 | 2008-11-12 | 北京航空航天大学 | Self-decoupling high-sensitivity resonance silicon micro mechanical gyroscope |
| FR2941533B1 (en) * | 2009-01-23 | 2011-03-11 | Commissariat Energie Atomique | SURFACE TECHNOLOGY INERTIAL OR SURFACE SENSOR WITH OFFSETTING DETECTION BY STRAIN GAUGE. |
| CN201673168U (en) * | 2010-05-28 | 2010-12-15 | 南京理工大学 | Low stress micro-silicon resonance accelerometer |
| CN201796049U (en) * | 2010-09-27 | 2011-04-13 | 南京理工大学 | Silicon micro resonant accelerometer |
| CN202049179U (en) * | 2011-04-25 | 2011-11-23 | 东南大学 | Silicon micro resonant type accelerometer with inconsistent base frequencies |
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