CN107806947A - High temperature pressure temperature one compound sensor - Google Patents
High temperature pressure temperature one compound sensor Download PDFInfo
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- CN107806947A CN107806947A CN201711098337.0A CN201711098337A CN107806947A CN 107806947 A CN107806947 A CN 107806947A CN 201711098337 A CN201711098337 A CN 201711098337A CN 107806947 A CN107806947 A CN 107806947A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 25
- 239000003921 oil Substances 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000605 extraction Methods 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000000945 filler Substances 0.000 claims abstract description 9
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 239000010959 steel Substances 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 230000005496 eutectics Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000005215 recombination Methods 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000010412 perfusion Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
High temperature pressure temperature one compound sensor, is related to pressure and temp compound sensor field.In order to solve the problems, such as to be unable to large range measuring pressure under big existing pressure and temp compound sensor volume, poor compatibility and high temperature.Ceramic ring of the present invention is located in circular big groove, presser sensor chip is located in the ring of ceramic ring, convoluted diaphragm is covered in the openend of circular big groove, gap between convoluted diaphragm and circular big groove is filled with high-temperature silicon oil, oil filler point is blocked by plugging steel ball, pressure ring is fixed on the opening of circular big groove, pressure is drawn terminal and is located in newel post extraction through hole, it is double hierarchic structures that through-hole wall is drawn by newel post, pressure draws terminal and is provided with two annular grooves along its circumference, temperature sensitive chip is located in circular little groove, the end that through hole is drawn by the openend of circular little groove and newel post is blocked by high intermediate temperature sealing glue.The present invention is applied under 200 DEG C of hot environments measurement temperature and a large amount of stroke pressures simultaneously.
Description
Technical field
The invention belongs to pressure and temp compound sensor field.
Background technology
Existing pressure and temp compound sensor mainly has two ways：
A kind of is to fit together each independent pressure sensor and temperature sensor, two sensor distance distances
Farther out, it is impossible to while smaller or regional area the pressure signal of impression and temperature signal, this pressure sensor and TEMP
Device is independently encapsulated and isolated with measured medium, causes that the volume of integral sensors is larger, and manufacturing cost is higher；
Another kind is the single-chip sensor for making pressure and temperature duplex measurement, by pressure sensor and temperature sensor
Make on the same chip, but it is platinum film to experience film due to the standard of temperature sensor, the force sensing resistance of pressure sensor is
On the monosilicon, its manufacture craft is more difficult and processing compatibility is poor, is made on the monosilicon even with COMS techniques for etching
Make temperature sensor, it is also very difficult to make single-chip pressure and temp compound sensor of good performance.Moreover, realize high temperature
The pressure-temperature sensor measured under 200 DEG C of environment uses split mode to measure substantially, it is impossible to measures more than 100MPa wide ranges
Pressure.
The content of the invention
The present invention is to solve under big existing pressure and temp compound sensor volume, poor compatibility and hot conditions not
The problem of wide range pressure measxurement can be met, now provide high temperature pressure temperature one compound sensor.
High temperature pressure temperature one compound sensor includes：Base 1, pressure ring 2, convoluted diaphragm 3, presser sensor chip 5, temperature
Spend sensitive chip 7, ceramic ring 9, pressure and draw terminal 10 and temperature extraction terminal 11；
Base 1 is cylinder, and the top of base 1 is provided with circular big groove 101, and ceramic ring 9 is located at the circular big groove 101
Interior, presser sensor chip 5 is located in the ring of ceramic ring 9, and is welded on the circular bottom centre of big groove 101, ripple by eutectic weldering 6
Line diaphragm 3 is covered in the openend of circular big groove 101, and high-temperature silicon oil is filled between convoluted diaphragm 3 and presser sensor chip 5
8, the side wall of base 1 is provided with oil filler point 103, and high-temperature silicon oil 8 is injected by oil filler point 103, and oil filler point 103 passes through plugging steel ball 13
Being blocked, pressure ring 2 is fixed on the opening of circular big groove 101,
Axial direction of the circular bottom of big groove 101 along base 1 is provided with newel post and draws through hole 102, and pressure is drawn terminal 10 and is located at
The newel post is drawn in through hole 102, and the output end of presser sensor chip 5 draws the head end phase of terminal 10 by lead 4 with pressure
Even, the end of pressure extraction terminal 10 is placed in outside base 1, and pressure is drawn between terminal 10 and newel post's extraction wall of through hole 102
Glass material 14 is filled with space,
It is double hierarchic structures that the inwall of through hole 102 is drawn by the newel post, and pressure draws terminal 10 and is provided with two rings along its circumference
Shape groove,
The bottom of base 1 is provided with circular little groove 104, and temperature sensitive chip 7 is located in the circular little groove 104, temperature
The head end that the output end of sensitive chip 7 draws terminal 11 by lead 4 with temperature is connected, and the end that temperature draws terminal 11 is put
Outside base 1, the end of the openend of circular little groove 104 and newel post's extraction through hole 102 passes through the high envelope of intermediate temperature sealing glue 12
It is stifled,
Base 1, pressure ring 2, circular big groove 101, circular little groove 104 and ceramic ring 9 are coaxial, external diameter of ceramic ring 9 etc.
In the internal diameter of circular big groove 101, the external diameter of pressure ring 2 is equal to the diameter of the top end face of base 1, and the internal diameter of pressure ring 2 is equal to circle
The internal diameter of big groove 101.
The advantages of high temperature pressure temperature one compound sensor of the present invention is：
The oil-filled encapsulation of presser sensor chip and the insertion of temperature sensitive chip of sensor are encapsulated in same base structure
It is interior, not only small volume, and be resistant to 200 DEG C of hot environments, the measurement of 200MPa pressure can be born.
High-temperature silicon oil and high-temp glue independent protective is respectively adopted in two chips, is contacted with measured medium with transfer mode, non-straight
Contact, there is very high stability, safety and reliability.
, can be simultaneously accurate due to presser sensor chip and temperature sensitive chip in same base structure and distance is very near
The really pressure signal and temperature signal in measurement the same area.
The presser sensor chip of sensor and the packaging technology of temperature sensitive chip are succinct, are easily assembled strong operability, tool
There is the feature for being adapted to batch production.
It is of the invention compared with existing pressure sensor and temperature sensor each individually packaged complex method, pressure is quick
The oil-filled encapsulation of sense chip and the insertion of temperature sensitive chip are encapsulated in compound in a base structure, have small volume, are easy to batch
The advantages of amount production, more accurate measurement same position pressure signal and temperature signal.
It is of the invention with it is existing making pressure and temperature duplex measurement single-chip sensor compared with, it is quick to not only avoid pressure
Sense chip and the compatibility issue of temperature sensitive chip difference manufacture craft, and 200 DEG C of hot environments are more resistant to, measure
The pressure signal and temperature signal of the same area.Meanwhile solves the pressure that integral brief summary structure mode measures under 200 DEG C of hot environments
Power temperature sensor Complex Problem, and big pressure range can be born.
Brief description of the drawings
Fig. 1 is the sectional view of high temperature pressure temperature one compound sensor；
Fig. 2 is the sectional view of base.
Embodiment
Embodiment one：Present embodiment, the high temperature pressure described in present embodiment are illustrated with reference to Fig. 1 and 2
Temperature one compound sensor, including：Base 1, pressure ring 2, convoluted diaphragm 3, presser sensor chip 5, temperature sensitive chip 7, pottery
Ceramic ring 9, pressure draw terminal 10 and temperature draws terminal 11；
Base 1 is cylinder, and the top of base 1 is provided with circular big groove 101, and ceramic ring 9 is located at the circular big groove 101
Interior, presser sensor chip 5 is located in the ring of ceramic ring 9, and is welded on the circular bottom centre of big groove 101, ripple by eutectic weldering 6
Line diaphragm 3 is covered in the openend of circular big groove 101, and high-temperature silicon oil is filled between convoluted diaphragm 3 and presser sensor chip 5
8, the side wall of base 1 is provided with oil filler point 103, and high-temperature silicon oil 8 is injected by oil filler point 103, and oil filler point 103 passes through plugging steel ball 13
Being blocked, pressure ring 2 is fixed on the opening of circular big groove 101,
Axial direction of the circular bottom of big groove 101 along base 1 is provided with newel post and draws through hole 102, and pressure is drawn terminal 10 and is located at
The newel post is drawn in through hole 102, and the output end of presser sensor chip 5 draws the head end phase of terminal 10 by lead 4 with pressure
Even, the end of pressure extraction terminal 10 is placed in outside base 1, and pressure is drawn between terminal 10 and newel post's extraction wall of through hole 102
Glass material 14 is filled with space,
It is double hierarchic structures that the inwall of through hole 102 is drawn by the newel post, and pressure draws terminal 10 and is provided with two rings along its circumference
Shape groove,
The bottom of base 1 is provided with circular little groove 104, and temperature sensitive chip 7 is located in the circular little groove 104, temperature
The head end that the output end of sensitive chip 7 draws terminal 11 by lead 4 with temperature is connected, and the end that temperature draws terminal 11 is put
Outside base 1, the end of the openend of circular little groove 104 and newel post's extraction through hole 102 passes through the high envelope of intermediate temperature sealing glue 12
It is stifled,
Base 1, pressure ring 2, circular big groove 101, circular little groove 104 and ceramic ring 9 are coaxially disposed, outside ceramic ring 9
Footpath is equal to the internal diameter of circular big groove 101, and the external diameter of pressure ring 2 is equal to the diameter of the top end face of base 1, and the internal diameter of pressure ring 2 is equal to
The internal diameter of circular big groove 101.
In present embodiment, presser sensor chip 5 is welded on base by eutectic weldering 6, then vacuum oil filling encapsulation, by ripple
Line diaphragm 3 experiences pressure.Temperature sensitive chip 7 is embedded in base core body bottom circular little groove 104, is drawn by argon arc welding,
And encapsulating encapsulates.
High-temperature silicon oil 8 is used to transmit pressure, and its fill method is：
After high temperature methyl-silicone oil is carried out into dehydration degassing process, base pressure cavity is filled into using vacuum perfusion process
It is interior；Side closure is carried out with plugging steel ball 13 using process for stamping or energy storage welding method after the completion of perfusion, meets big 200MPa
Pressure carries, and the block-up position of plugging steel ball 13 bears external and internal pressure simultaneously, can uniform balance stress.
Through hole 102 is drawn by newel post has two ring ladders so that and through hole 102 is drawn by newel post has three groups of reducing holes,
The diameter of three groups of holes is from top to bottom sequentially reduced, and forms double hierarchic structures.This pair of hierarchic structure can improve glass powder sintering
Efficiency, and the distribution of 200MPa pressure lower stress can be decomposed.Two annular grooves that pressure draws terminal 10 use punching press or rolling
Pressure is process, and double hierarchic structures in through hole 102 are drawn with being fused into one after glass sintering with newel post, it is possible to increase sintering with
The fastness of stress；Simultaneously stress can be effectively decomposed when bearing 200MPa pressure.The two is fixed by glass sintering
Connection, sealing can be ensured and be resistant to 200 DEG C of hot environments.
Ceramic ring 9 is used to protect the presser sensor chip 5 in its ring, and the filling of few high-temperature silicon oil, uses ceramic ring as far as possible
Occupy the useless cavity space that base can not be processed.Convoluted diaphragm 3 is welded to base by pressure ring using argon arc welding technique
Oil-filled housing on, high temperature resistant silicone oil 8 is injected laterally in tube base housing using the method for vacuum oil.
Present embodiment assembles presser sensor chip 5 and temperature sensitive chip 7 on a base 1, and mounting distance connects
It is near and independently of each other, measured pressure signal and the function of temperature signal simultaneously can be realized under 200 DEG C of hot environments.Base and pressure
Power draws terminal 10 and uses glass sintering, can bear 200MPa pressure, realize wide range pressure measxurement.
Because presser sensor chip 5 and temperature sensitive chip 7 are placed very closely, a small-sized bluk recombination is assembled into by base
Device, smaller or regional area pressure signal and temperature signal can be experienced simultaneously, solve in same 200 DEG C of regions of high temperature
Technical barrier that is interior while measuring pressure and temperature, on the other hand can also be compensated to the temperature of pressure sensor.
Embodiment two：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, and in present embodiment, presser sensor chip 5 is SOI presser sensor chips.
Presser sensor chip 5 is using SOI Substrate as backing material, silicon minute-pressure resistive principle pressure-sensitive.The chip is single using upper strata
Crystal silicon produces four presser sensor resistance as making presser sensor resistance material, and circuit connects into Wheatstone electricity
Bridge experiences pressure signal, is formed between presser sensor resistance and substrate by MEMS technology method and energetic oxygen ions injection technique
SiO2Separation layer, the PN isolation junctions in conventional diffusion silicon piezoresistance type sensitive chip are eliminated, by SiO2Layer realizes device and substrate
Fully dielectric isolation, thus there is good high-temperature stability and security.C-type silicon cup bottom again will by static bonding process
The back side carries out sealing-in with Pyrex7740 glass, obtains reference cavity, realizes and measure high-temperature high-pressure under the hot environment more than 200 DEG C
Power sensitive chip.
Embodiment three：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, and in present embodiment, temperature sensitive chip 7 is Pt1000 temperature sensitive chips.
Temperature sensitive chip 7 carries out temperature test using platinum film resistor.The chip be designed to ceramic substrate, platinum film and
Surface containment three-decker, platinum film are closely attached between substrate and encapsulated layer.The heat of temperature sensitive chip trilaminate material
Performance Match is consistent, compressive strain caused by compressive strain and encapsulated layer of the substrate to platinum film is cancelled out each other, can not only widen platinum
The temperature in use of thin-film thermistor, and its reliability, stability and repeatability can be improved.Standard is made in ceramic substrate
Pt1000 resistance, platinum film surface are covered with glassy layer, silver-colored palladium lead terminal glass glaze covering, appearance and size by semiconductor technology
For 2mm × 4mm.
Embodiment four：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, in present embodiment,
It is that 4J29 can cut down gold that base 1, pressure ring 2, pressure, which draw terminal 10 and the material of temperature extraction terminal 11,.
Embodiment five：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, in present embodiment,
Terminal 10 is drawn in eutectic weldering 6, pressure and the outer surface of temperature extraction terminal 11 is coated with metal layer gold.
Embodiment six：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, and in present embodiment, the lead 4 of presser sensor chip 5 is spun gold.
During practical application, presser sensor chip 5 is drawn gold wire bonding in pressure by the technique of gold wire ball ultrasonic-thermocompression welding
In outlet column 10, ensure more than the welding tensile strength 10g of spun gold.
Embodiment seven：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, and in present embodiment, the lead 4 of temperature sensitive chip 7 is silver-colored palladium silk.
The lead 4 of temperature sensitive chip 7 is drawn using silver-colored palladium silk, to ensure weld strength, first by silver-colored palladium silk in temperature
The circle of winding two on terminal 11 is drawn, is welded with argon arc welding.Then temperature sensitive chip 7 is embedded into circular little groove
In 104, embedding is carried out using the high intermediate temperature sealing glue 12 of high temperature resistant and insulating properties.
Embodiment eight：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, and in present embodiment, eutectic weldering 6 is AuSn solder sheets.
AuSn eutectic solders (280 DEG C of fusing point) have intensity height, creep resistant, thermal conductivity are good, are resistant to burn into infiltrate
The features such as excellent, the low viscosity of property.The AuSn eutectic reflow solderings of flux-free are carried out under vacuum conditions, realize presser sensor core
Piece 5 is integrated in base cavity.Vacuum back-flow welds the voidage that can substantially reduce welding, and improves welding quality.
Embodiment nine：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, in present embodiment, base 1 and between pass through the argon arc welding of pressure ring 2；Through hole 102 is drawn by newel post
Sintered between pressure extraction terminal 10 by glass material 14.
Embodiment ten：Present embodiment is to the bluk recombination of high temperature pressure temperature one described in embodiment one
Sensor is described further, and in present embodiment, the outer lead of temperature sensitive chip 7 draws terminal using silver-colored palladium silk and temperature
11 mutually windings, and pass through argon arc welding.
Claims (10)
1. high temperature pressure temperature one compound sensor, it is characterised in that including：Base (1), pressure ring (2), convoluted diaphragm (3),
Presser sensor chip (5), temperature sensitive chip (7), ceramic ring (9), pressure draw terminal (10) and temperature draws terminal (11)；
Base (1) is cylinder, circular big groove (101) is provided with the top of base (1), it is big recessed that ceramic ring (9) is located at the circle
In groove (101), presser sensor chip (5) is located in the ring of ceramic ring (9), and welds (6) by eutectic and be welded on circular big groove
(101) bottom centre, convoluted diaphragm (3) are covered in the openend of circular big groove (101), convoluted diaphragm (3) and presser sensor
High-temperature silicon oil (8) is filled between chip (5), the side wall of base (1) is provided with oil filler point (103), and high-temperature silicon oil (8) passes through oiling
Hole (103) is injected, and oil filler point (103) is blocked by plugging steel ball (13), and pressure ring (2) is fixed on circular big groove (101)
Opening,
Axial direction of circular big groove (101) bottom along base (1) is provided with newel post and draws through hole (102), and pressure draws terminal (10)
Drawn positioned at the newel post in through hole (102), the output end of presser sensor chip (5) draws terminal by lead (4) and pressure
(10) head end is connected, and the end that pressure draws terminal (10) is placed in base (1) outside, and pressure is drawn terminal (10) and drawn with newel post
Go out and glass material (14) be filled with the space between through hole (102) wall,
It is double hierarchic structures that through hole (102) inwall is drawn by the newel post, and pressure draws terminal (10) and is provided with two rings along its circumference
Shape groove,
The bottom of base (1) is provided with circular little groove (104), and temperature sensitive chip (7) is located in the circular little groove (104),
The head end that the output end of temperature sensitive chip (7) draws terminal (11) by lead (4) with temperature is connected, and temperature draws terminal
(11) end is placed in base (1) outside, and the end that through hole (102) is drawn by the openend of circular little groove (104) and newel post is equal
Blocked by high intermediate temperature sealing glue (12),
Base (1), pressure ring (2), circular big groove (101), circular little groove (104) and ceramic ring (9) coaxially, ceramic ring (9)
External diameter be equal to the internal diameter of circular big groove (101), the external diameter of pressure ring (2) is equal to the diameter of end face at the top of base (1), pressure ring
(2) internal diameter is equal to the internal diameter of circular big groove (101).
2. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that presser sensor chip
(5) it is SOI presser sensor chips.
3. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that temperature sensitive chip
(7) it is Pt1000 temperature sensitive chips.
4. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that base (1), pressure ring
(2) it is that 4J29 can cut down gold that, pressure, which draws terminal (10) and the material of temperature extraction terminal (11),.
5. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that eutectic weldering (6), pressure
The outer surface for drawing terminal (10) and temperature extraction terminal (11) is coated with metal layer gold.
6. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that presser sensor chip
(5) lead (4) is spun gold.
7. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that temperature sensitive chip
(7) lead (4) is silver-colored palladium silk.
8. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that eutectic welds (6) and is
AuSn solder sheets.
9. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that base (1) and between
Pass through pressure ring (2) argon arc welding；
Newel post draws and sintered between through hole (102) and pressure extraction terminal (10) by glass material (14).
10. high temperature pressure temperature one compound sensor according to claim 1, it is characterised in that temperature sensitive chip
(7) outer lead is drawn terminal (11) with temperature using silver-colored palladium silk and mutually wound, and passes through argon arc welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711098337.0A CN107806947A (en) | 2017-11-09 | 2017-11-09 | High temperature pressure temperature one compound sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711098337.0A CN107806947A (en) | 2017-11-09 | 2017-11-09 | High temperature pressure temperature one compound sensor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494196A (en) * | 2018-12-21 | 2019-03-19 | 西安赛尔电子材料科技有限公司 | A kind of silumin package casing and preparation method thereof |
| CN113551826A (en) * | 2021-07-22 | 2021-10-26 | 西人马联合测控（泉州）科技有限公司 | Pressure sensor and preparation method thereof |
| CN113624368A (en) * | 2021-06-22 | 2021-11-09 | 成都凯天电子股份有限公司 | High-temperature-resistant oil-filled SOI pressure sensor |
| CN113816329A (en) * | 2021-08-25 | 2021-12-21 | 中国电子科技集团公司第四十九研究所 | Resonant pressure sensitive chip probe of vacuum packaging structure and packaging method thereof |
| CN115808263A (en) * | 2023-02-06 | 2023-03-17 | 苏州森斯缔夫传感科技有限公司 | Pressure sensing device, packaging method and pressure monitoring equipment |
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| CN109494196A (en) * | 2018-12-21 | 2019-03-19 | 西安赛尔电子材料科技有限公司 | A kind of silumin package casing and preparation method thereof |
| CN113624368A (en) * | 2021-06-22 | 2021-11-09 | 成都凯天电子股份有限公司 | High-temperature-resistant oil-filled SOI pressure sensor |
| CN113551826A (en) * | 2021-07-22 | 2021-10-26 | 西人马联合测控（泉州）科技有限公司 | Pressure sensor and preparation method thereof |
| CN113816329A (en) * | 2021-08-25 | 2021-12-21 | 中国电子科技集团公司第四十九研究所 | Resonant pressure sensitive chip probe of vacuum packaging structure and packaging method thereof |
| CN113816329B (en) * | 2021-08-25 | 2023-08-11 | 中国电子科技集团公司第四十九研究所 | Resonance pressure sensitive chip probe of vacuum packaging structure and packaging method thereof |
| CN115808263A (en) * | 2023-02-06 | 2023-03-17 | 苏州森斯缔夫传感科技有限公司 | Pressure sensing device, packaging method and pressure monitoring equipment |
| CN115808263B (en) * | 2023-02-06 | 2023-10-27 | 苏州森斯缔夫传感科技有限公司 | Pressure sensing device, packaging method and pressure monitoring equipment |
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