CN206670840U - A kind of small-sized silicon piezoresistance type gas pressure sensor structure - Google Patents
A kind of small-sized silicon piezoresistance type gas pressure sensor structure Download PDFInfo
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- CN206670840U CN206670840U CN201720488869.4U CN201720488869U CN206670840U CN 206670840 U CN206670840 U CN 206670840U CN 201720488869 U CN201720488869 U CN 201720488869U CN 206670840 U CN206670840 U CN 206670840U
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Abstract
The utility model discloses a kind of small-sized silicon piezoresistance type gas pressure sensor structure, including shell, base of ceramic, pressure chip and circuit board；Cavity is formed in shell, base of ceramic is arranged in the cavity of shell, and pressure chip is arranged on base of ceramic and communicated with extraneous gas；Circuit board is arranged in cavity and electrically connected with pressure chip, and circuit board passes through cable output signal.The utility model realizes that pressure sensor minimizes, and improves the dynamic characteristic of pressure sensor.
Description
Technical field
Gas pressure sensor technical field is the utility model is related to, refers in particular to a kind of small-sized silicon piezoresistance type gas pressure
Sensor construction.
Background technology
Gas pressure sensor（MEMS sensor）It is widely used in aerodynamics, aircraft, engine test, wind-tunnel
The area researches such as experiment, shock wave, explosive test.MEMS sensor has small volume, in light weight, low in energy consumption, reliability it is high and
The features such as stability is good, particularly silicon piezoresistance type MEMS pressure sensor.For to being tested flow field, riding position or Dynamic response
Requirement, it is necessary to during pressure measurement in situ, the usually miniaturization to the appearance and size of sensor has more harsh requirement.
As shown in figure 1, a kind of silicon piezoresistance type pressure sensor that prior art discloses, it uses the core of oil-filled encapsulating structure
Body, pressure chip 10 are arranged on metal base 20, and the lead 101 of pressure chip 10 is drawn through metal base 20, and pressure ring 30 is set
Put on metal base 20, convoluted diaphragm 301 is set on pressure ring 30, silicon is filled between convoluted diaphragm 301 and pressure chip 10
Oil, oil filling core body are arranged in sensor outer housing, and sealing is crimped by welded seal or O-ring seal with shell.Because of oil-filled core
Convoluted diaphragm and silicone oil the meeting compensator or trimmer pressure of body, reduce the dynamic characteristic of sensor, can not be filled as gas pressure sensor
Oil.Fig. 2 is not oil-filled silicon piezoresistive pressure chip installation signal, first pressure chip 10 is arranged on metal base 20, pressure
The lead 101 of chip 10 is drawn through metal base 20, and metal base 20 is arranged in shell again, with shell welded seal.
The defects of silicon piezoresistance type pressure sensor, is：One, the either pressure oil-filled using oil filling core body or not
Chip, the size after whole sensor encapsulation is all bigger, because being used to install pressure chip using metal base, for close
Envelope, isolated pressure chip contact with the other materials beyond transmission medium, for the company between pressure chip and back-end circuit plate
Connect bridge.
Two, housing is sealed and formed at high temperature with lead with glass insulator, because by machining level and glass sintering
The limitation of technique, the diameter of metal base can not accomplish very little, cause sensor to be difficult to minimize.
Three, oil filling core body is used, because the influence of convoluted diaphragm and silicone oil, the dynamic response of sensor is poor.
Utility model content
The purpose of this utility model is to provide a kind of small-sized silicon piezoresistance type gas pressure sensor structure, to realize pressure
Sensor miniaturization, improve the dynamic characteristic of pressure sensor.
In order to reach above-mentioned purpose, solution of the present utility model is：
A kind of small-sized silicon piezoresistance type gas pressure sensor structure, including shell, base of ceramic, pressure chip and circuit
Plate；Cavity is formed in shell, base of ceramic is arranged in the cavity of shell, and pressure chip is arranged on base of ceramic and outside gas
Body phase is led to；Circuit board is arranged in cavity and electrically connected with pressure chip, and circuit board passes through cable output signal.
Further, mounting groove is set on base of ceramic, and pressure chip is arranged in the mounting groove of base of ceramic, and pressure core
The pressure-sensitive face of piece and the upper surface flush of base of ceramic.
Further, pressure chip is pasted in the mounting groove of base of ceramic.
Further, the periphery of the mounting groove of base of ceramic sets fairlead, and fairlead axially penetrates through base of ceramic, fairlead
In pass through lead, lead one end connection pressure chip, lead other end connection circuit board.
Further, breach is set between fairlead and mounting groove at the top of mounting groove so that fairlead and installation groove top
Portion connects.
Further, base of ceramic is arranged to cylinder, and base of ceramic is pasted in the cavity of shell.
Further, in addition to dust cover, it is close with pressure chip to be arranged on casing ends for dust cover, and gas is set on dust cover
Discharge orifice, gas act on the pressure-sensitive face of pressure chip through airflow hole.
Further, dust cover welded and installed is in casing ends.
Further, in addition to end cap, end cap are arranged on the front end of shell, and cable passes through end cap, and is fixed with end cap.
Further, end cap welded and installed is in the front end of shell.
Further, circuit board is pasted in the cavity of shell.
After such scheme, when in use, transmission medium acts on the pressure-sensitive face of pressure chip, pressure to the utility model
Pressure signal is converted into voltage signal by chip, is connected by lead with circuit board, output voltage of the circuit board to pressure chip
Signal is handled, and is outwards transmitted eventually through cable.The utility model uses base of ceramic substituted metal pedestal, without glass
Glass sinter, diameter can set it is smaller, so as to reduce size sensor.
Meanwhile base of ceramic is provided with chip mounting groove, the leaded hole of mounting groove surrounding, fairlead is directly through whole ceramics
Pedestal, pressure chip are pasted onto in mounting groove, and pressure chip pressure-sensitive face is substantially flush with base of ceramic upper surface, reduce exposed draw
The length of line, improve reliability.
Base of ceramic is arranged on casing ends, close dust cover, can improve the dynamic response of sensor.
There is a breach at the top of mounting groove between fairlead and mounting groove so that fairlead at the top of mounting groove with connecting.
Lead can be embedded in the breach, reduced the exposed length in the outside of base of ceramic 2 of lead, can be isolated lead, avoid lead
Between overlap short circuit, improve reliability.
Brief description of the drawings
Fig. 1 is the structural representation of prior art gas pressure sensor；
Fig. 2 is another structural representation of prior art gas pressure sensor；
Fig. 3 is structural representation of the present utility model；
Fig. 4 is the structural representation of the utility model base of ceramic；
Fig. 5 is the top view of the utility model base of ceramic.
Label declaration
The lead 101 of pressure chip 10
The pressure ring 30 of metal base 20
Convoluted diaphragm 301
The cavity 11 of shell 1
The mounting groove 21 of base of ceramic 2
The fairlead 23 of upper surface 22
The circuit board 4 of pressure chip 3
The end cap 6 of dust cover 5
The cable 8 of lead 7.
Embodiment
The utility model is described in detail below in conjunction with drawings and the specific embodiments.
Refer to described in Fig. 3 to Fig. 5, a kind of small-sized silicon piezoresistance type gas pressure sensor knot that the utility model discloses
Structure, including shell 1, base of ceramic 2, pressure chip 3, circuit board 4, dust cover 5 and end cap 6.
Cavity 11 is formed in shell 1, base of ceramic 2 is arranged in the cavity 11 of shell 1, in the present embodiment, base of ceramic 2
Cylinder is arranged to, base of ceramic 2 is pasted in the cavity 11 of shell 1.
Pressure chip 3 is arranged on base of ceramic 2 and communicated with extraneous gas, and in the present embodiment, peace is set on base of ceramic 2
Tankage 21, pressure chip 3 are arranged in the mounting groove 21 of base of ceramic 2, and the pressure-sensitive face of pressure chip 3 and base of ceramic 2
Upper surface 22 flushes.Pressure chip 3 is pasted in the mounting groove 21 of base of ceramic 2.The week of the mounting groove 21 of base of ceramic 2
Edge sets fairlead 23, and fairlead 23 axially penetrates through base of ceramic 2, and lead 7, the one end of lead 7 connection pressure are passed through in fairlead 23
Power chip 3, the other end of lead 7 connection circuit board 4.
After lead 7 passes through fairlead 23, gap between lead 7 and fairlead 23 applies fluid sealant, lead 7 be spun gold or
Aluminium wire, diameter is in 20um-50um, 23 quantity of fairlead 4-6.
Circuit board 4 is arranged in cavity 11 and electrically connected with pressure chip 3, is attached by lead 7, circuit board 4 is pasted
In the cavity 11 of shell 1.Circuit board 4 passes through the output signal of cable 8.
Breach is set close to the top of mounting groove 21 between fairlead 23 and mounting groove 21 so that fairlead 23 and mounting groove 12
Top connects.Lead can be embedded in the breach, reduced the exposed length in the outside of base of ceramic 2 of lead, can be isolated lead,
Avoid overlapping short circuit between lead, improve reliability.
Dust cover 5 is arranged on the end of shell 1 and pressure chip 3 is close, airflow hole 51 is set on dust cover 5, gas is through gas
Discharge orifice 51 acts on the pressure-sensitive face of pressure chip 3.The welded and installed of dust cover 5 is in the end of shell 1.
End cap 6 is arranged on the front end of shell 1, and cable 8 passes through end cap 6, and is fixed with end cap 6.The welded and installed of end cap 6 exists
The front end of shell 1.End cap 6 is used to install cable 8, and is sealed with shell 1, protects inner member.
When in use, transmission medium acts on the pressure-sensitive face of pressure chip 3 to the utility model, and pressure chip 3 believes pressure
Number voltage signal is converted into, is connected by lead 7 with circuit board 4, circuit board 4 is carried out to the output voltage signal of pressure chip 3
Processing, is outwards transmitted eventually through cable 8.The utility model uses the substituted metal pedestal of base of ceramic 2, is burnt without glass
Knot, diameter can set it is smaller, so as to reduce size sensor.
Meanwhile base of ceramic 2 is provided with chip mounting groove 21, the leaded hole 23 of the surrounding of mounting groove 21, fairlead 23 directly passes through
Whole base of ceramic 2 is worn, pressure chip 3 is pasted onto in mounting groove 21, the pressure-sensitive face of pressure chip 3 and the upper surface base of base of ceramic 2
Originally flush, reduce the length of exposed lead 7, improve reliability.Base of ceramic 2 is arranged on the end of shell 1, can close to dust cover 5
To improve the dynamic response of sensor.
Preferred embodiment of the present utility model is the foregoing is only, not to the limitation of this case design, all setting according to this case
The crucial equivalent variations done of meter, each fall within the protection domain of this case.
Claims (7)
- A kind of 1. small-sized silicon piezoresistance type gas pressure sensor structure, it is characterised in that：Including shell, base of ceramic, pressure core Piece and circuit board；Cavity is formed in shell, base of ceramic is arranged in the cavity of shell, and pressure chip is arranged on base of ceramic Communicated with extraneous gas；Circuit board is arranged in cavity and electrically connected with pressure chip, and circuit board passes through cable output signal.
- A kind of 2. small-sized silicon piezoresistance type gas pressure sensor structure as claimed in claim 1, it is characterised in that：Base of ceramic Upper setting mounting groove, pressure chip are arranged in the mounting groove of base of ceramic, and the pressure-sensitive face of pressure chip and base of ceramic Upper surface flush.
- A kind of 3. small-sized silicon piezoresistance type gas pressure sensor structure as claimed in claim 2, it is characterised in that：Base of ceramic The periphery of mounting groove fairlead is set, fairlead axially penetrates through base of ceramic, and lead pass through in fairlead, and lead one end connects Pressure chip, lead other end connection circuit board.
- A kind of 4. small-sized silicon piezoresistance type gas pressure sensor structure as claimed in claim 3, it is characterised in that：Fairlead with Breach is set between mounting groove at the top of mounting groove so that fairlead at the top of mounting groove with connecting.
- A kind of 5. small-sized silicon piezoresistance type gas pressure sensor structure as claimed in claim 1, it is characterised in that：Base of ceramic Cylinder is arranged to, base of ceramic is pasted in the cavity of shell.
- A kind of 6. small-sized silicon piezoresistance type gas pressure sensor structure as claimed in claim 1, it is characterised in that：Also include anti- Dust hood, dust cover is close with pressure chip installed in casing ends, airflow hole is set on dust cover, gas acts on through airflow hole The pressure-sensitive face of pressure chip.
- A kind of 7. small-sized silicon piezoresistance type gas pressure sensor structure as claimed in claim 1, it is characterised in that：Also include end Lid, end cap are arranged on the front end of shell, and cable passes through end cap, and is fixed with end cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720488869.4U CN206670840U (en) | 2017-05-04 | 2017-05-04 | A kind of small-sized silicon piezoresistance type gas pressure sensor structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720488869.4U CN206670840U (en) | 2017-05-04 | 2017-05-04 | A kind of small-sized silicon piezoresistance type gas pressure sensor structure |
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| CN206670840U true CN206670840U (en) | 2017-11-24 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108267259A (en) * | 2018-03-19 | 2018-07-10 | 深圳瑞德感知科技有限公司 | Ceramic MEMS pressure sensor |
| CN108275648A (en) * | 2017-12-21 | 2018-07-13 | 中航（重庆）微电子有限公司 | A kind of pressure sensor packaging structure based on silicon piezoresistance type |
| CN109058082A (en) * | 2018-10-08 | 2018-12-21 | 陈宏玉 | A kind of pump-up device and its control method based on the device |
| CN109637761A (en) * | 2018-09-26 | 2019-04-16 | 南京时恒敏感元件有限公司 | A kind of explosion-proof thermal resistor and its manufacturing method |
| CN111238691A (en) * | 2020-03-09 | 2020-06-05 | 胡增永 | High-precision force sensor |
| CN112326096A (en) * | 2020-11-04 | 2021-02-05 | 麦克传感器股份有限公司 | Pressure sensitive element sintering base |
| CN113008438A (en) * | 2021-02-26 | 2021-06-22 | 西安微电子技术研究所 | High-precision silicon-based piezoresistive pressure sensor |
| CN113091985A (en) * | 2021-04-21 | 2021-07-09 | 南京特敏传感技术有限公司 | Wide-range miniaturized pressure transmitter |
| CN113252233A (en) * | 2021-05-26 | 2021-08-13 | 西安微电子技术研究所 | Digital piezoresistive pressure sensor circuit and digital piezoresistive pressure sensor |
| CN114323419A (en) * | 2021-12-29 | 2022-04-12 | 中国电子科技集团公司第四十八研究所 | Take redundant pressure core of double chip |
-
2017
- 2017-05-04 CN CN201720488869.4U patent/CN206670840U/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108275648A (en) * | 2017-12-21 | 2018-07-13 | 中航（重庆）微电子有限公司 | A kind of pressure sensor packaging structure based on silicon piezoresistance type |
| CN108267259A (en) * | 2018-03-19 | 2018-07-10 | 深圳瑞德感知科技有限公司 | Ceramic MEMS pressure sensor |
| CN109637761A (en) * | 2018-09-26 | 2019-04-16 | 南京时恒敏感元件有限公司 | A kind of explosion-proof thermal resistor and its manufacturing method |
| CN109058082A (en) * | 2018-10-08 | 2018-12-21 | 陈宏玉 | A kind of pump-up device and its control method based on the device |
| CN111238691A (en) * | 2020-03-09 | 2020-06-05 | 胡增永 | High-precision force sensor |
| CN112326096A (en) * | 2020-11-04 | 2021-02-05 | 麦克传感器股份有限公司 | Pressure sensitive element sintering base |
| CN113008438A (en) * | 2021-02-26 | 2021-06-22 | 西安微电子技术研究所 | High-precision silicon-based piezoresistive pressure sensor |
| CN113091985A (en) * | 2021-04-21 | 2021-07-09 | 南京特敏传感技术有限公司 | Wide-range miniaturized pressure transmitter |
| CN113091985B (en) * | 2021-04-21 | 2022-10-28 | 南京特敏传感技术有限公司 | Wide-range miniaturized pressure transmitter |
| CN113252233A (en) * | 2021-05-26 | 2021-08-13 | 西安微电子技术研究所 | Digital piezoresistive pressure sensor circuit and digital piezoresistive pressure sensor |
| CN114323419A (en) * | 2021-12-29 | 2022-04-12 | 中国电子科技集团公司第四十八研究所 | Take redundant pressure core of double chip |
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