CN112466915A - In-screen sensing device structure of display panel and display device - Google Patents
In-screen sensing device structure of display panel and display device Download PDFInfo
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Abstract
A sensor device structure in a screen of a display panel and a display device are provided, wherein a substrate, a first control thin film transistor layer and a second control thin film transistor layer are arranged on the substrate, and the first control thin film transistor layer and the second control thin film transistor layer are respectively arranged on different layers; the second control thin film transistor layer is provided with a second control thin film transistor and a sensing device transistor, and the sensing device transistor is used for sensing external environment information. Because the display device and the sensor device are arranged on the same back plate, and the control TFTs of the two devices are designed in different layers, the sensor device and the control TFTs thereof have enough layout area, and meanwhile, the independent sensor device is replaced by the thin film transistor with the same function, so that the light sensation device layer and the light sensation device control TFT layer which are at least two layers originally are simplified into one layer, the process flow of the light sensation sensor in the screen is greatly reduced, and the process cost of light sensation application in the screen is reduced.
Description
Technical Field
The invention relates to the technical field of display, in particular to an in-screen sensing device structure of a display panel and a display device.
Background
The flat panel display technology based on the Thin Film Transistor (TFT) array is the mainstream of the current display technology, mainly because the TFT processing technology is relatively simple and the cost of the technology is low, and is suitable for large-area production. With the development of TFT flat panel display technology, more and more display drivers and other functional modules may be implemented by using TFT integrated circuits. A column driver circuit, a power supply circuit, a photoelectric sensor circuit, and the like are manufactured using TFTs as main elements and integrated on a display Panel, thereby forming on-screen SoP (System on Panel). For example, an optical sensor is integrated in the display panel to implement an optical fingerprint recognition function.
In the conventional sensing technology of the display panel, most of the display panels displaying fingerprint identification have an off-screen structure, that is, the display device emits Light to irradiate a fingerprint, the fingerprint reflected Light is identified by an off-screen photosensitive device, the display device and the sensing device need to be processed respectively, then a display device layer and a sensor device layer are attached by using an Optical Clear Adhesive (OCA) glue, the process is complex, and the display panels can only be used on an Organic Light Emitting Diode (OLED) display panel. In the prior art, a sensor device with an in-screen structure is provided, in which a display device and a sensor device are fabricated on the same substrate, which can properly reduce the complexity of the process compared with the conventional technology, but because the display device and the sensor device are fabricated on the same substrate in the technology, the control TFT of the display device and the control TFT of the sensor device are located in the same layer and are restricted by the wiring area of the actual layout, the circuit design of the control TFT of the display device and the control TFT of the sensor device is restricted, and the due effect cannot be realized, so that the in-screen sensor device in the prior art is not only restricted by the wiring area, but also limited in application and complex in process.
Therefore, it is desirable to provide a sensor structure or method applied in a display panel, which can reduce the process complexity and can make the display device more practical.
Disclosure of Invention
The invention provides an in-screen sensing device structure of a display panel, which reduces the process complexity and the limitation of the in-screen sensing device caused by the process and wiring.
According to a first aspect, an embodiment provides an on-screen sensing device structure of a display panel, comprising:
a substrate;
the first control thin film transistor layer and the second control thin film transistor layer are respectively positioned on different layers;
the first control thin film transistor layer is internally provided with a first control thin film transistor, the first control thin film transistor is connected with a display device, the display device is used for displaying information, and the first control thin film transistor is used for controlling the display device;
the second control thin film transistor layer is internally provided with a second control thin film transistor and a sensing device transistor, the sensing device transistor is used for sensing external environment information and converting the external environment information into an electric signal, the second control thin film transistor is connected with the sensing device transistor, and the second control thin film transistor is used for controlling the sensing device transistor.
In some embodiments, the active layer of the sensor device transistor is a photosensitive material.
In some embodiments, the sensing device transistor further comprises a pressure sensitive material or a temperature sensitive material, and the pressure sensitive material is in signal connection with a gate or a channel of the sensing device transistor.
In some embodiments, the gate electrode of the sensing device transistor and/or the gate electrode of the second control thin film transistor is a top gate structure, a bottom gate structure, a single gate structure, or a double gate structure.
In some embodiments, the active layer of the second control thin film transistor and the active layer of the sensor device transistor are made of different materials, and the active layer of the second control thin film transistor is made of a non-metal oxide, amorphous silicon, graphene, molybdenum disulfide, or a carbon nanotube.
In some embodiments, the first control thin-film transistor layer and the second control thin-film transistor layer are respectively located on two sides of the substrate;
alternatively, the first and second electrodes may be,
the first control thin film transistor layer is positioned on one surface of the substrate, and the second control thin film transistor layer is positioned on the surface of the first control thin film transistor layer;
alternatively, the first and second electrodes may be,
the second control thin film transistor layer is located on one surface of the substrate, and the first control thin film transistor layer is located on the surface of the second control thin film transistor layer.
In some embodiments, an isolation layer is between the first control thin-film transistor layer and the second control thin-film transistor layer.
In some embodiments, the display device is an OLED, a QLED, a Mini-LED, a Micro-LED.
In some embodiments, the substrate is a rigid material or a flexible material, the rigid material comprising silicon or glass; the flexible material comprises PI or PET.
According to a second aspect, there is provided in an embodiment a display device comprising: the display device comprises a substrate, a first control thin film transistor layer, a display device and a second control thin film transistor layer;
the first control thin film transistor layer and the second control thin film transistor layer are positioned on the substrate and are respectively positioned on different layers;
the first control thin film transistor layer is connected with the display device through a metal interconnection layer, the display device is used for displaying information, and the first control thin film transistor is used for controlling the display device;
the second control thin film transistor layer is internally provided with a first control thin film transistor and a sensing device transistor, the sensing device transistor is used for sensing external environment information and converting the external environment information into an electric signal, the second control thin film transistor is connected with the sensing device transistor, and the second control thin film transistor is used for controlling the sensing device transistor.
According to the in-screen sensor device structure or the display device of the embodiment, the display device and the sensor device are arranged on the same back plate, namely the same substrate, the display device and the sensor device are arranged on the same back plate, and the control TFTs of the two devices are designed in different layers, so that the sensor device and the control TFTs thereof have enough layout area, and meanwhile, the independent sensor device is replaced by the thin film transistors with the same functions, so that the light sensor device layer and the light sensor device control TFT layer which are at least two layers originally are simplified into one layer, the process flow of the in-screen light sensor is greatly reduced, and the process cost of the in-screen light application is reduced.
Drawings
FIG. 1 is a schematic diagram of a prior art in-screen sensing device configuration;
fig. 2 is a schematic top view of a pixel according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of an on-screen sensor device according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of an on-screen sensor device according to another embodiment of the present invention.
The display device comprises a substrate 100, a scanning line 20, a data line 30, a PIXEL structure PIXEL, external optical information 10, a first control thin film transistor layer 200, a second control thin film transistor layer 300, a display device 210, a second control thin film transistor 320, a first active layer 202, a first gate electrode 204, a first source electrode 205, a first drain electrode 206, a dielectric layer 203, a metal interconnection layer 500, an insulating layer 400, a sensing device transistor 310, an active layer 311 of the sensing device transistor, a gate electrode 312 of the sensing device transistor, a source electrode 313 of the sensing device transistor, a drain electrode 314 of the sensing device transistor, a second active layer 321, a second gate electrode 322, a second source electrode 323 and a second drain electrode 324.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings. Wherein like elements in different embodiments are numbered with like associated elements. In the following description, numerous details are set forth in order to provide a better understanding of the present application. However, those skilled in the art will readily recognize that some of the features may be omitted or replaced with other elements, materials, methods in different instances. In some instances, certain operations related to the present application have not been shown or described in detail in order to avoid obscuring the core of the present application from excessive description, and it is not necessary for those skilled in the art to describe these operations in detail, so that they may be fully understood from the description in the specification and the general knowledge in the art.
Furthermore, the features, operations, or characteristics described in the specification may be combined in any suitable manner to form various embodiments. Also, the various steps or actions in the method descriptions may be transposed or transposed in order, as will be apparent to one of ordinary skill in the art. Thus, the various sequences in the specification and drawings are for the purpose of describing certain embodiments only and are not intended to imply a required sequence unless otherwise indicated where such sequence must be followed.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings).
As known from the background art, the sensing device with the in-screen structure in the prior art is limited by the process and the wiring, and the manufacturing process is complicated, so that the sensing device cannot be well applied in practice.
As can be seen by analysis, there are two major problems: firstly, a control Thin Film Transistor (TFT) of a display device and a control TFT of a sensing device are in the same layer and are restricted by the wiring area of an actual layout, the area of the sensor is small, and a control TFT circuit is too simple, so that the reading and amplification effects of signals are poor. The second is that the sensing signal noise is large due to large leakage current of a Low Temperature Polysilicon (LTPS) TFT currently used as a control TFT of a sensing device. As shown in fig. 1, the control TFT1 of the display device and the control TFT2 of the sensor device in fig. 1 are in the same layer, and due to the restriction of the actual layout wiring area, the circuits of the control TFT1 of the display device and the control TFT2 of the sensor device can only be designed very simply, so that the reading and amplifying effects of signals are poor, and secondly, because the control TFT1 of the display device and the control TFT2 of the sensor device are in the same layer, the active layer material of the control TFT1 of the display device and the active layer material of the control TFT2 of the sensor device are the same, and have large leakage current.
In the embodiment of the invention, the display device and the sensor device are arranged on the same backboard, and the control TFTs of the two devices are designed in different layers, so that the sensor device and the control TFTs thereof have enough layout area, and the traditional independent sensor device can be replaced by the thin film transistor with the same function because the sensor device and the control TFTs are not limited by layout area, so that the light sensor device layer and the light sensor device control TFT layer which are at least two layers originally are simplified into one layer, the process flow of the light sensor in the screen is greatly reduced, and the process cost of the light sensor application in the screen is reduced.
Fig. 2 is a schematic top-view structure diagram of a pixel provided in this embodiment, and fig. 3 and 4 are schematic cross-sectional structure diagrams of an on-screen sensor device provided in the present invention. Referring to fig. 2 to 4, the present embodiment provides an on-screen sensor device structure for a display panel, which includes a substrate 100, and a first control thin-film transistor layer 200 and a second control thin-film transistor layer 300 on the substrate 100.
The substrate 100 may be a rigid material or a flexible material.
In this embodiment, when the substrate 100 is a rigid material, it may be silicon or glass; when the substrate 100 is a flexible material, it may be PI (polyimide) or PET (polyethylene terephthalate).
The first control thin-film transistor layer 200 and the second control thin-film transistor layer 300 are located at different layers, respectively, where the first control thin-film transistor layer 200 is connected to a display device 210, and the display device is used for displaying information, for example, displaying corresponding image information. The first control thin film transistor controls the on-off or brightness of a single pixel unit on the display device through a switching signal.
In this embodiment, after the first control thin-film transistor layer 200 is formed on the substrate 100, the second control thin-film transistor layer 300 is formed thereon, or after the second control thin-film transistor layer 300 is formed on the substrate 100, the first control thin-film transistor layer 200 is formed thereon, because when the second control thin-film transistor layer 300 and the first control thin-film transistor layer 200 are formed on the same substrate and separately on different layers, the circuit wiring space between the second control thin-film transistor layer 300 and the first control thin-film transistor layer 200 is not affected, and each can have enough space for wiring design, which can make the effect of the whole device structure better.
In this embodiment, the first control thin film transistor layer 200 has a plurality of first control thin film transistors, and the number of the first control thin film transistors is designed as a control circuit device, and the first control thin film transistors are configured to send or receive signals to or from the display device 210.
In this embodiment, the first control thin film transistor is a control device of the display device 210. The signal transmitted or received by the first control thin film transistor may be a driving signal or a display signal applied to the display device 210.
The first control thin film transistor includes a first active layer 202 disposed on the substrate 100, and further includes: the first active layer 202 comprises a first gate 204, a first source 205 and a first drain 206, a dielectric layer 203 is arranged between the first gate 204 and the first active layer 202, and a metal interconnection layer 500 is connected to the first source 205 or the first drain 206.
It should be noted that the positions of the first source 205 and the first drain 206 are not limited, and when the corresponding position has a source function, the first source 205 is used, and when the corresponding position has a drain function, the first drain 206 is used. The dielectric layer 203 between the first gate 204 and the first active layer 202 is a gate dielectric layer, such as silicon dioxide, an insulating layer 400 is formed among the first gate 204, the first source 205, and the first drain 206, and the insulating layer 400 may be silicon oxide or other dielectric materials.
The first control tft is connected to the display device 210 through the metal interconnection layer 500, the metal interconnection layer 500 is also formed in the insulating layer 400, and the first drain electrode 206 of the first control tft is connected to the display device 210 through the metal interconnection layer 500 in this embodiment.
Referring to fig. 2 in combination, the display device 210 (display) may be connected to the scan line 20 and the data line 30, and specifically, the first gate 204 of the first control thin film transistor may be connected to the scan line 220, the first source 205 or the first drain 206 may be connected to the data line 230, and the first drain 206 or the first source 205 may be connected to the pixel electrode.
In this embodiment, the display device 210 is an OLED.
In other embodiments, the display device may also be a QLED, Mini-LED or Micro-LED.
With continued reference to fig. 3 and fig. 4, the second control tft layer 300 has a second control tft 320 and a sensor device tft 310, and the sensor device tft 310 can sense external environment information, where the external information may be environment information such as light information, pressure information, or temperature information, and can also convert the external environment information into an electrical signal. The second control thin film transistor 320 is connected to the sensing device transistor 310, and the second control thin film transistor 320 is used to control the sensing device transistor 310.
In this embodiment, the sensing device transistor 310 can sense external light information, such as the external light information 10, and can convert the light information 10 into an electrical signal. The sensing device transistor 310 includes: an active layer 311 of a sense device transistor, a gate 312 of the sense device transistor, a source 313 of the sense device transistor, and a source 314 of the sense device transistor. It should be noted that the sensitive material is affected by external light, temperature, pressure, etc. and can generate electrical signals, but these signals are generally weak, so the control part of the sensor transistor is relatively complex, and the second control thin film transistor layer and the first control thin film transistor layer are separated by the present application, so that the sensor transistor has enough layout area, thereby solving the problem that the control part cannot make complex limitation, and using the sensitive material in the active layer of the device, so as to use the sensor transistor to replace the traditional sensor.
A gate dielectric layer, such as silicon dioxide, is disposed between the active layer 311 and the gate of the sensor device transistor, and an insulating layer 400 is disposed between the active layer 311 of the sensor device transistor, the gate 312 of the sensor device transistor, the source 313 of the sensor device transistor, and the source 314 of the sensor device transistor, where the insulating layer 400 may be silicon oxide or other dielectric material.
The second control thin film transistor 320 is a control device of the sensing device transistor 310, the second control thin film transistor 320 includes a second active layer 321 disposed on the substrate 100, and further includes a second gate 322, a second source 323, and a second drain 324, and a dielectric layer is disposed between the second gate 322 and the second active layer 321, and the dielectric layer is a gate dielectric layer, and may be, for example, silicon dioxide.
It should be noted that the positions of the second source 323 and the second drain 324 are not limited, and the second source 323 is used when the corresponding position has a source function, and the second drain 324 is used when the corresponding position has a drain function. An insulating layer 400 is formed between the second gate 302, the second source 303, or the second drain 304, and the insulating layer 400 may be silicon oxide. The second control thin film transistor 320 is connected to the sensing device transistor 310, so that the second control thin film transistor 320 can control the sensing device transistor 310.
The sensing device transistor 310(SENSE TFT) is connected to the scan line 20 and the readout line 30, and specifically, the second gate 322 of the second control TFT is connected to the scan line 20, the second source 323 or the second drain 324 is connected to the readout line 30, and the second drain 324 or the second source 323 is connected to the sensing device 310.
The sensing device transistor 310 and the second control thin film transistor 320 can be formed and manufactured simultaneously, and thus, a device for sensing an external environment and a control device thereof can be formed and manufactured simultaneously, manufacturing processes and flows are greatly reduced, operation is simplified, and cost is saved.
In this embodiment, the active layer 311 of the sensor transistor is made of a photosensitive material, so that the sensor transistor 310 has the function of a photosensor, the photosensor and the photosensor control device layer are simplified into the same layer, and the first control thin film transistor are formed on different layers of the same backplane, that is, on different layers of the same substrate, which does not affect respective wiring, and greatly saves the process flow.
Note that the material of the first active layer 202 is different from the material of the second active layer 321. Since the first control thin film transistor layer 200 and the second control thin film transistor layer 300 are respectively located at different layers, the first active layer 202 in the first control thin film transistor and the second active layer 321 in the second control thin film transistor may be made of different materials, and active layer materials with improved performance may be selected.
As can be seen from analysis, the smaller the leakage current of the second control thin film transistor connected to the sensing device transistor 310 is, the smaller the sensing noise thereof is, and in this embodiment, when the second active layer 321 is a non-metal oxide (a-MO), the leakage current of the second control thin film transistor can be reduced, thereby improving the sensing effect of the sensing device transistor 310.
In other embodiments, the material of the second active layer 321 may also be amorphous silicon, graphene, molybdenum disulfide, or carbon nanotubes.
Further, the active layer 311 of the sensing device transistor and the active layer 321 of the second control thin film transistor may be made of the same material, or different materials may be used according to actual needs.
In this embodiment, the second gate 322 may have a top gate structure, a bottom gate structure, a single gate structure, or a double gate structure. Since the performance of the second control tft 320 has a significant influence on the sensing effect of the sensing device transistor 310, the improvement of the structure of the second gate 302 can improve the performance of the second control tft 320, thereby improving the sensing effect of the sensing device transistor 310.
In this embodiment, the gate 312 of the sensing device transistor is a top gate structure, a bottom gate structure, a single gate structure, or a dual gate structure, so as to improve the sensing effect of the sensing device transistor 310. For example, the gate 312 of the sensor device transistor shown in fig. 4 has a dual-gate structure, that is, the upper and lower sides of the active layer 311 of the sensor device transistor are both provided with gates that are communicated with each other, so that vertical electric fields generated by the two gates at the active layer 311 of the sensor device transistor are mutually offset, carriers are mainly concentrated at the middle position of the active layer 311 of the sensor device transistor, and then defects at the interface of the active layer 311 of the sensor device transistor can be effectively suppressed, thereby improving the electrical performance.
Referring to fig. 4, in some embodiments, the sensing device transistor 310 may further include a pressure sensitive material or a temperature sensitive material 330, such that the pressure sensitive material or the temperature sensitive material 330 is in signal connection with a gate or a channel of the sensing device transistor. Specifically, the pressure sensitive material or the temperature sensitive material 330 may be disposed on the gate or the channel of the transistor of the sensing device.
For example, when the sensor transistor 310 itself is a light-sensing device, and a pressure-sensitive material is placed on the gate or the channel of the sensor transistor 310, the sensor transistor 310 is a device having a combined effect of light sensing and pressure sensing, and can simultaneously realize the functions of light sensing and pressure sensing; when a temperature sensitive material is disposed on the gate or the channel of the sensor transistor 310, the sensor transistor 310 is a device having a combined effect of light sensing and temperature sensing, and can simultaneously realize the functions of light sensing and temperature sensing.
In this embodiment, the first control thin-film transistor layer 200 and the second control thin-film transistor layer 300 are located on the same surface of the substrate 100. Referring to fig. 3 and 4, first control-thin-film-transistor layer 200 is located above substrate 100, and second control-thin-film-transistor layer 300 is located above first control-thin-film-transistor layer 200. There are many alternative forming methods, for example, first control thin-film transistor layer 200 may be formed on the substrate, then the insulating layer may be deposited thereon, and then second control thin-film transistor layer 300 may be formed on the insulating layer, although it is necessary to form second control thin-film transistor 320 and sensing device transistor 310 simultaneously when forming second control thin-film transistor layer 300. Alternatively, first control thin-film transistor layer 200 may be formed on the substrate, and second control thin-film transistor layer 300 may be formed by directly starting to be disposed on the layer where the source and drain of first control thin-film transistor layer 200 are formed, for example, the gate layers in first control thin-film transistor layer 200 and second control thin-film transistor layer 300 may be designed to be on the same layer (as shown in fig. 3), which may further save the process, and of course, when second control thin-film transistor layer 300 is formed by being disposed, second control thin-film transistor 320 and sensing device transistor 310 need to be formed at the same time.
Correspondingly, the first control thin-film transistor layer 200 and the second control thin-film transistor layer 300 are located on the same surface of the substrate 100, or the first control thin-film transistor layer 200 and the second control thin-film transistor layer 300 may exchange positions, that is, the second control thin-film transistor layer 300 is formed on one surface of the substrate 100, and then the first control thin-film transistor layer 200 is formed on the surface of the second control thin-film transistor layer 300. Correspondingly, there are many forming methods that may be selected, for example, the second control thin-film transistor layer 300 may be formed on the substrate first, then an insulating layer may be deposited thereon, and then the first control thin-film transistor layer 200 may be formed on the insulating layer, and of course, when the second control thin-film transistor layer 300 is formed, the second control thin-film transistor 320 and the sensing device transistor 310 need to be formed at the same time. Alternatively, first, forming second control thin-film transistor layer 300 on the substrate, and directly starting to arrange and form first control thin-film transistor layer 200 on the layer where the source and drain of second control thin-film transistor 320 are formed, for example, the gate layers in first control thin-film transistor layer 200 and second control thin-film transistor layer 300 may be designed to be on the same layer, which may further save the process, and certainly, when arranging and forming second control thin-film transistor layer 300, second control thin-film transistor 320 and sensing device transistor 310 need to be formed at the same time.
In some embodiments, the first control thin-film transistor layer 200 and the second control thin-film transistor layer 300 may be respectively located on the front side and the back side of the substrate 100, and this structure may implement a case where the sensing function and the display function are respectively located on both sides.
Regardless of the relative positions of the first control thin-film transistor layer 200 and the second control thin-film transistor layer 300, the corresponding display devices may be connected through the metal interconnection layer 500.
In this embodiment, a display apparatus is further provided, where the display panel includes a plurality of PIXEL structures PIXELs, and the PIXEL structures PIXELs include the above-described intra-panel sensor structure.
The in-screen sensing device structure comprises a substrate, a first control thin film transistor layer, a display device and a second control thin film transistor layer; the first control thin film transistor layer and the second control thin film transistor layer are positioned on the substrate, and meanwhile, active layers of the first control thin film transistor layer and the second control thin film transistor layer are respectively positioned on different layers; the first control thin film transistor layer is connected with the display device through a metal interconnection layer, the display device is used for displaying information, and the first control thin film transistor is used for controlling the display device; the second control thin film transistor layer is internally provided with a first control thin film transistor and a sensing device transistor, the sensing device transistor is used for sensing external environment information and converting the external environment information into an electric signal, the second control thin film transistor is connected with the sensing device transistor, and the second control thin film transistor is used for controlling the sensing device transistor.
The PIXEL structure PIXRL further comprises a grid driving chip used for driving a grid electrode in the PIXEL structure PIXEL, and a source driving chip used for driving a source electrode in the PIXEL structure PIXRL. In addition, a power supply unit may be further included, and the power supply unit may supply power to the display panel. A driving voltage transmitted from an external device may be received, and a voltage for a display panel, a driving circuit, and the like may be generated and provided.
In this embodiment, because the display device and the sensor device are fabricated on the same backplane, that is, the same substrate, the display device and the sensor device are fabricated on the same backplane, and the control TFTs of the two devices are designed in different layers, the sensor device and the control TFT thereof have enough layout area, and the independent sensor device is replaced by the thin film transistor having the same function, so that the light sensor device layer and the light sensor device control TFT layer, which are originally at least two layers, are simplified into one layer, the process flow of the light sensor in the screen is greatly reduced, and the process cost of the light sensor application in the screen is reduced.
The present invention has been described in terms of specific examples, which are provided to aid understanding of the invention and are not intended to be limiting. For a person skilled in the art to which the invention pertains, several simple deductions, modifications or substitutions may be made according to the idea of the invention.
Claims (10)
1. An in-screen sensor structure of a display panel, comprising:
a substrate;
the first control thin film transistor layer and the second control thin film transistor layer are respectively positioned on different layers;
the first control thin film transistor layer is internally provided with a first control thin film transistor, the first control thin film transistor is connected with a display device, the display device is used for displaying information, and the first control thin film transistor is used for controlling the display device;
the second control thin film transistor layer is internally provided with a second control thin film transistor and a sensing device transistor, the sensing device transistor is used for sensing external environment information and converting the external environment information into an electric signal, the second control thin film transistor is connected with the sensing device transistor, and the second control thin film transistor is used for controlling the sensing device transistor.
2. The on-screen sensing device structure of claim 1, wherein an active layer of the sensing device transistor is a photosensitive material.
3. The on-screen sensing device structure of claim 2, wherein the sensing device transistor further comprises a pressure sensitive material or a temperature sensitive material, and the pressure sensitive material or the temperature sensitive material is in signal connection with a gate or a channel of the sensing device transistor.
4. The on-screen sensing device structure of claim 3, wherein the gate of the sensing device transistor and/or the gate of the second control thin film transistor is a top-gate structure, a bottom-gate structure, a single-gate structure, or a double-gate structure.
5. The on-screen sensing device structure of claim 2, wherein an active layer material of the second control thin film transistor is different from an active layer material of the sensing device transistor, and the active layer material of the second control thin film transistor is a non-metal oxide, amorphous silicon, graphene, molybdenum disulfide, or a carbon nanotube.
6. The on-screen sensor device structure of claim 1, wherein the first control thin-film transistor layer and the second control thin-film transistor layer are located on opposite sides of the substrate, respectively;
alternatively, the first and second electrodes may be,
the first control thin film transistor layer is positioned on one surface of the substrate, and the second control thin film transistor layer is positioned on the surface of the first control thin film transistor layer;
alternatively, the first and second electrodes may be,
the second control thin film transistor layer is located on one surface of the substrate, and the first control thin film transistor layer is located on the surface of the second control thin film transistor layer.
7. The on-screen sensor device structure of claim 1, wherein the first control thin-film transistor layer and the second control thin-film transistor layer have an isolation layer therebetween.
8. The on-screen sensing device structure of claim 2, wherein the display device is an OLED, a QLED, a Mini-LED, a Micro-LED.
9. The on-screen sensing device structure of claim 1, wherein the substrate is a rigid material or a flexible material, the rigid material comprising silicon or glass; the flexible material comprises PI or PET.
10. A display device, comprising: the display device comprises a substrate, a first control thin film transistor layer, a display device and a second control thin film transistor layer;
the first control thin film transistor layer and the second control thin film transistor layer are positioned on the substrate and are respectively positioned on different layers;
the first control thin film transistor layer is connected with the display device through a metal interconnection layer, the display device is used for displaying information, and the first control thin film transistor is used for controlling the display device;
the second control thin film transistor layer is internally provided with a first control thin film transistor and a sensing device transistor, the sensing device transistor is used for sensing external environment information and converting the external environment information into an electric signal, the second control thin film transistor is connected with the sensing device transistor, and the second control thin film transistor is used for controlling the sensing device transistor.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113571532A (en) * | 2021-07-14 | 2021-10-29 | 惠州华星光电显示有限公司 | TFT backboard, LED display panel and manufacturing method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211861A (en) * | 2006-12-26 | 2008-07-02 | 北京大学 | Integrated micro-sensor preparation method |
| KR20180048179A (en) * | 2016-11-02 | 2018-05-10 | 엘지디스플레이 주식회사 | Pressure touch sensor integrated organic light emitting display device |
| CN108922427A (en) * | 2018-07-31 | 2018-11-30 | Oppo广东移动通信有限公司 | Display screen component and electronic equipment |
| WO2019010991A1 (en) * | 2017-07-14 | 2019-01-17 | 京东方科技集团股份有限公司 | Fingerprint recognition unit and method, display substrate, and display device |
| CN110718560A (en) * | 2019-09-30 | 2020-01-21 | 武汉华星光电技术有限公司 | Array substrate, preparation method thereof and display panel |
| US20200091253A1 (en) * | 2018-09-14 | 2020-03-19 | Boe Technology Group Co., Ltd. | Array substrate, display panel and operating method thereof |
| CN110931522A (en) * | 2018-08-31 | 2020-03-27 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| US20200257873A1 (en) * | 2019-02-13 | 2020-08-13 | Samsung Electronics Co., Ltd. | Display and electronic device including the same |
| CN111696494A (en) * | 2020-07-02 | 2020-09-22 | Tcl华星光电技术有限公司 | Display panel and display device |
-
2020
- 2020-11-19 CN CN202011298860.XA patent/CN112466915A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211861A (en) * | 2006-12-26 | 2008-07-02 | 北京大学 | Integrated micro-sensor preparation method |
| KR20180048179A (en) * | 2016-11-02 | 2018-05-10 | 엘지디스플레이 주식회사 | Pressure touch sensor integrated organic light emitting display device |
| WO2019010991A1 (en) * | 2017-07-14 | 2019-01-17 | 京东方科技集团股份有限公司 | Fingerprint recognition unit and method, display substrate, and display device |
| CN108922427A (en) * | 2018-07-31 | 2018-11-30 | Oppo广东移动通信有限公司 | Display screen component and electronic equipment |
| CN110931522A (en) * | 2018-08-31 | 2020-03-27 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| US20200091253A1 (en) * | 2018-09-14 | 2020-03-19 | Boe Technology Group Co., Ltd. | Array substrate, display panel and operating method thereof |
| US20200257873A1 (en) * | 2019-02-13 | 2020-08-13 | Samsung Electronics Co., Ltd. | Display and electronic device including the same |
| CN110718560A (en) * | 2019-09-30 | 2020-01-21 | 武汉华星光电技术有限公司 | Array substrate, preparation method thereof and display panel |
| CN111696494A (en) * | 2020-07-02 | 2020-09-22 | Tcl华星光电技术有限公司 | Display panel and display device |
Non-Patent Citations (1)
| Title |
|---|
| 陈立强等: "α-IGZO薄膜场效应晶体管的光敏特性", 《光电子.激光》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113571532A (en) * | 2021-07-14 | 2021-10-29 | 惠州华星光电显示有限公司 | TFT backboard, LED display panel and manufacturing method thereof |
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