CN105974104A - Giant piezoresistive structure based cantilever beam biochemical sensor and production method of cantilever beam - Google Patents
Giant piezoresistive structure based cantilever beam biochemical sensor and production method of cantilever beam Download PDFInfo
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- CN105974104A CN105974104A CN201610318148.9A CN201610318148A CN105974104A CN 105974104 A CN105974104 A CN 105974104A CN 201610318148 A CN201610318148 A CN 201610318148A CN 105974104 A CN105974104 A CN 105974104A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
Abstract
The invention provides a giant piezoresistive structure based cantilever beam biochemical sensor and a production method of a cantilever beam. The data collector of the sensor adopts a giant piezoresistive structure based cantilever beam structure formed by silicon aluminum heterojunctions, and can generate a great resistance value under the same stress condition, thus fundamentally improving the sensitivity of the biochemical sensor; the two adjacent common-mode signal compensation structures are adopted, so that the measurement precision of each cantilever beam of the biochemical sensor in the complex external environment is ensured, and the impact of failure of a cantilever beam on measurement results is reduced; in addition, the sensor adopts a four-wire measurement method and a signal amplification and wave filtering regulating circuit, so that more accurate signals can be obtained, the impact of noise and other external factors on test results is weakened, and high-precision and stable-measurement effects can be realized.
Description
Technical field
The present invention relates to a kind of cantilever beam biochemical sensor based on huge piezo-resistive arrangement and cantilever beam manufacture method, belong to micro-
Nano electromechanical systems sensor technical field.
Background technology
Along with the fast development of MEMS (MEMS) technology since the eighties in last century, increasing MEMS device
Part is widely used in the every field such as industrial or agricultural, Aero-Space, weather environment, national defense and military.And in the last few years along with micro-spy
Succeeding in developing of the devices such as pin and miniflow meter, large number of MEMS enters chemical analysis, biological detection, medicine screening
With fields such as the public environment monitorings of hygiene.But, current biochemical sensor limits due to this body structure of device, it is impossible to realize real
Time high accuracy, highly sensitive biochemistry detection.
Microcantilever beam is always the focus of people's research as extremely important basic structure a kind of in MEMS.Base
Sensor in cantilever beam structure can be by measurement to be checked, and such as parameters such as quality, temperature, stress, to be converted into the static state of cantilever beam curved
Bent amount or dynamic resonance frequency variation, thus realize measuring fast and accurately to be measured.While it is true, traditional pressure
Resistance structure cantilever beam sensor resistor-strain coefficient is little, along with diminishing of size sensor, due to self structure and the limit of technique
System, such as: large area absorption causes cantilever beam elastic constant to change, and produces frequency shift (FS) and causes measurement error；Liquid biochemical ring
In border, cantilever beam quality factor is greatly reduced, and causes sensitivity decrease etc., and this kind of sensor can not meet modern Gao Ling
The requirement of sensitivity test.The most traditional biochemical sensor owing to being affected by factors such as temperature, humidity, illumination in environment,
Lack signal compensation so that certainty of measurement produces relatively large deviation, it is impossible to meet user under complicated external environmental condition high accuracy,
Highly sensitive biochemistry detection requirement.
Summary of the invention
The present invention is to solve drawbacks described above and deficiency present in prior art, it is provided that a kind of based on huge piezo-resistive arrangement
Cantilever beam biochemical sensor and cantilever beam manufacture method, it is huge that the cantilever beam of this biochemical sensor uses that sial hetero-junctions formed
Piezo-resistive arrangement, its piezoresistance coefficient increases with the coefficient of strain equal order of magnitude ground, greatly improves the sensitivity of sensor, Ke Yiyou
Effect ground catches biochemical viruses molecule.
For solving above-mentioned technical problem, the present invention provides a kind of cantilever beam biochemical sensor based on huge piezo-resistive arrangement, bag
Include data acquisition unit, four-line measurement circuit, AD7794 analog-digital converter, MSP430F169 single-chip microcomputer and LCD12864 liquid crystal
Display screen, described data acquisition unit by the data that collect by four-line measurement circuit transmission to AD7794 analog-digital converter,
Export to MSP430F169 single-chip microcomputer after the conversion of AD7794 analog-digital converter, MSP430F169 single-chip microcomputer send to LCD12864
LCDs, in LCD12864 liquid crystal display screen display；
Described data acquisition unit includes substrate and is sequentially fixed at described several cantilever beams suprabasil, described in several
Cantilever beam is connected by same constant current source power supply, by the company of metallic aluminium material between the fixing end of described adjacent two cantilever beams
Wiring is connected；Detection zone that described cantilever beam includes setting gradually, metallic aluminium Duan Qu, huge piezo-resistive arrangement district, doped silicon section district, institute
State detection zone by self assembly rear surface, the end modified high molecular sensitive material in metallic aluminium section district or bioactive molecule material
Forming, be positioned at the free end of overarm arm, described doped silicon section district is positioned at the fixing end of cantilever beam, and described huge piezo-resistive arrangement district is silicon
Aluminum hetero-junctions, the fixing end of described cantilever beam is provided with potential measurement point.
Further, the both sides of described cantilever beam are equipped with common-mode signal collocation structure, and each cantilever beam utilizes adjacent thereto
Two common-mode signal collocation structures eliminate noises, and adjacent two cantilever beams share a common-mode signal collocation structure.
Further, described common-mode signal collocation structure is identical with the size of described cantilever beam and composition material.
Further, described common-mode signal collocation structure is connected by same constant current source power supply, described common mode with described cantilever beam
It is connected by the connecting line of metallic aluminium material between signal compensation structure with described cantilever beam.
Further, the width in described metallic aluminium section district is 70-100 μm, a length of 35-60 μm, described doped silicon section district
Width is 70-100 μm, a length of 6 μm.
Further, described substrate is soi wafer.
Further, it is provided with, between described four-line measurement circuit and described AD7794 analog-digital converter, the multichannel being sequentially connected
Selector and filtering and amplifying circuit.
Further, described filtering and amplifying circuit includes being made up of resistance R1, R2, R3, R4 and difference amplifier AD8216
First order amplifying circuit, the second order RC lowpass filter being made up of resistance R5 and electric capacity C1, resistance R7 and electric capacity C2, by resistance
The second level amplifying circuit that R6, resistance R8, electric capacity C5 are constituted with difference amplifier AD8216, by accurate amplifier OPA177, resistance
The second order active low-pass filter circuit that R9, resistance R10, electric capacity C3 and electric capacity C4 are constituted.
The manufacture method of cantilever beam, comprises the following steps:
Step one, material prepares；Select soi wafer as substrate, first substrate is carried out, then at substrate subscript
Ji Chuyiduan district, two-stage nitration district；
Step 2, doped silicon section district makes；Inject boron ion in the two-stage nitration district of step one labelling, high temperature rapid thermal annealing activates
Boron ion, then the silicon in one section of district of employing photoetching and RIE lithographic method etching is to silicon dioxide sacrificial layer, thus is mixed
Za Guiduan district；
Step 3, metallic aluminium section district makes；Spin coating photoresist in doped silicon section district and silicon dioxide sacrificial layer surface, so
Rear splash-proofing sputtering metal aluminum, and chemical wet etching metallic aluminium structure, form metallic aluminium section district；
Step 4, huge piezo-resistive arrangement makes；Utilize lift-off stripping technology, in metallic aluminium section district and doped silicon section district
Junction obtains sial hetero-junctions, forms huge piezo-resistive arrangement district, and makes silicon dioxide layer of protection in huge piezo-resistive arrangement district；
Step 5, discharges cantilever beam；To doped silicon Duan Qu, huge piezo-resistive arrangement district and the silicon dioxide of metallic aluminium Duan Qu both sides
Carry out chemical wet etching, and after the edge in doped silicon Duan Qu, huge piezo-resistive arrangement district and metallic aluminium section district is made protective layer, continue to carve
Erosion, to substrate silicon, then selects potassium hydroxide to erode below doped silicon Duan Qu, huge piezo-resistive arrangement district and metallic aluminium section district and two
The substrate silicon of side, obtains cantilever beam.
The Advantageous Effects that the present invention is reached: the present invention provides a kind of cantilever beam biochemistry based on huge piezo-resistive arrangement to pass
Sensor and cantilever beam manufacture method, the data acquisition unit employing of this sensor has the huge piezo-resistive arrangement of sial hetero-junctions formation
Cantilever beam structure, it is possible to produce bigger resistance change under identical stress condition, fundamentally improve biochemical sensitive
The sensitivity of device；Use two adjacent common-mode signal collocation structures, it is possible to ensure that each cantilever beam of this biochemical sensor is multiple
Certainty of measurement under miscellaneous external environment, reduces because of the malfunctioning impact producing measurement result of indivedual cantilever beams；It addition, this sensing
Device uses four-line measurement method and the amplification of signal, filtering modulate circuit, available signal, attenuating noise the most accurately
Etc. the extraneous factor impact on testing result, high accuracy, the effect of stably measured can be reached.
Accompanying drawing explanation
The data acquisition unit structural representation of Fig. 1 present invention；
The four-line measurement circuit diagram of Fig. 2 present invention；
The filtering and amplifying circuit figure of Fig. 3 present invention；
The coefficient of strain of Fig. 4 present invention piezo-resistive arrangement is with doped silicon section section length change curve；
The cantilever beam fabrication processing block diagram of Fig. 5 present invention.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings.Following example are only used for clearly illustrating the present invention
Technical scheme, and can not limit the scope of the invention with this.
As Figure 1-3, the present invention provides a kind of cantilever beam biochemical sensor based on huge piezo-resistive arrangement, including data acquisition
Storage, four-line measurement circuit, AD7794 analog-digital converter, MSP430F169 single-chip microcomputer and LCD12864 LCDs, institute
State data acquisition unit and the data collected are passed through four-line measurement circuit transmission to AD7794 analog-digital converter, AD7794 modulus
Export to MSP430F169 single-chip microcomputer after transducer conversion, MSP430F169 single-chip microcomputer send to LCD12864 liquid crystal display
Screen, in LCD12864 liquid crystal display screen display；
Described data acquisition unit includes substrate 1 and is sequentially fixed at described several cantilever beams 2 suprabasil, is respectively
C1, C2 ... CN, substrate 1 is soi wafer, and several described cantilever beams 2 are connected by same constant current source power supply, and constant-current source is carrying
For while constant current, reduce the measuring result error caused because of power supply difference, the fixing end of described adjacent two cantilever beams 2
Between be connected by the connecting line of metallic aluminium material 4；Described cantilever beam 2 includes detection zone 21, the metallic aluminium section district set gradually
22, huge piezo-resistive arrangement district 23, doped silicon section district 24, described detection zone 21 is repaiied by the self assembly rear surface, end in metallic aluminium section district 22
Decorations high molecule sensitivity material or bioactive molecule material form, and are positioned at the free end of overarm arm 2, described doped silicon section district 24
Being positioned at the fixing end of cantilever beam 2, described huge piezo-resistive arrangement district 23 is sial hetero-junctions, and the fixing end of described cantilever beam 2 is provided with
Potential measurement point.
Tested molecule drops at the detection zone of cantilever beam, causes cantilever beam to bend after forming compression weight, and cantilever beam bends
Further resulting in its surface especially root area and produce bigger stress, this stress causes the huge piezoresistive effect of sial hetero-junctions convex
Aobvious, i.e. this Stress relief barrier height of sial hetero-junctions, makes the quantity generation great variety that electronics passes through, so that resistance
There is order of magnitude great change.Relative to traditional cantilever beam sensor, use hanging of the huge piezo-resistive arrangement formed by sial hetero-junctions
Arm beam biochemical sensor can produce the resistance change become apparent under identical stress condition, thus this patent is from sensing
The sensitivity of biochemical sensor is improve in structure.
The both sides of several described cantilever beams are provided with Immobile common-mode signal collocation structure 3, respectively P1, P2 ...
PN, each cantilever beam all may utilize adjacent thereto two common-mode signal collocation structure and eliminates noise, and adjacent two cantilever beams
Share a common-mode signal collocation structure 3, use common-mode signal collocation structure so that the present invention can according to external environment not
With, it is provided that the common-mode signal such as temperature, humidity compensates.The size of described common-mode signal collocation structure 3 and described cantilever beam 2 and composition
Material is identical.Described common-mode signal collocation structure 3 is connected by same constant current source power supply, constant-current source both positive and negative polarity with described cantilever beam 2
Incoming end is respectively I+, I-, by the connecting line of metallic aluminium material between described common-mode signal collocation structure 3 and described cantilever beam 2
4 are connected.
Each cantilever beam 2 and common-mode signal collocation structure 3 all use four-line measurement circuit to carry out voltage measurement, to eliminate
Parasitic voltage drops present in tradition two-line measurement, improves the degree of accuracy of measurement result, four-line measurement circuit potentiometric detection point
It is respectively Often
The measurement result of individual cantilever beam, if the voltage measurements of C1 is according to formulaMeter
Obtaining, final measurement result is the meansigma methods of several cantilever beam measurement results, according to formula
It is calculated.User can select the number of cantilever beam according to practical situation, even if when error occur in indivedual cantilever beam measurements, logical
Cross multiple cantilever array measurement to average, it is also possible to final measurement error is significantly reduced.
It is provided with, between described four-line measurement circuit and described AD7794 analog-digital converter, the MUX being sequentially connected
And filtering and amplifying circuit.Described filtering and amplifying circuit can effectively suppress the error that common mode disturbances introduces, and improves signal to noise ratio and is
The precision of system, has higher gain and wider gain-adjusted scope, specifically includes and put with difference by resistance R1, R2, R3, R4
The first order amplifying circuit that big device AD8216 is constituted, the Order RC being made up of resistance R5 and electric capacity C1, resistance R7 and electric capacity C2 is low
Bandpass filter, the second level amplifying circuit being made up of with difference amplifier AD8216 resistance R6, resistance R8, electric capacity C5, by precision
The second order active low-pass filter circuit that amplifier OPA177, resistance R9, resistance R10, electric capacity C3 and electric capacity C4 are constituted.Step low-pass is filtered
Ripple device is used for removing high-frequency noise, reduces overall noise voltage, detects useful signal.
Test shows, the size of cantilever beam greatly have impact on pressure drag and the coefficient of strain of huge piezo-resistive arrangement, therefore, described
The width in metallic aluminium section district is 70-100 μm, a length of 35-60 μm, and the width in described doped silicon section district is 70-100 μm, length
It is 6 μm.Fig. 4 is that the coefficient of strain of huge piezo-resistive arrangement is with doped silicon section section length change curve.
The manufacture method flow process of cantilever beam is as it is shown in figure 5, comprise the following steps:
Step one, material prepares；Select soi wafer as substrate, first substrate is carried out, then at substrate subscript
Ji Chuyiduan district, two-stage nitration district；
Step 2, doped silicon section district makes；Inject boron ion in the two-stage nitration district of step one labelling, high temperature rapid thermal annealing activates
Boron ion, then the silicon in one section of district of employing photoetching and RIE lithographic method etching is to silicon dioxide sacrificial layer, thus is mixed
Za Guiduan district；
Step 3, metallic aluminium section district makes；Spin coating photoresist in doped silicon section district and silicon dioxide sacrificial layer surface, so
Rear splash-proofing sputtering metal aluminum, and chemical wet etching metallic aluminium structure, form metallic aluminium section district；
Step 4, huge piezo-resistive arrangement makes；Utilize lift-off stripping technology, in metallic aluminium section district and doped silicon section district
Junction obtains sial hetero-junctions, forms huge piezo-resistive arrangement district, and makes silicon dioxide layer of protection in huge piezo-resistive arrangement district；
Step 5, discharges cantilever beam；To doped silicon Duan Qu, huge piezo-resistive arrangement district and the silicon dioxide of metallic aluminium Duan Qu both sides
Carry out chemical wet etching, and after the edge in doped silicon Duan Qu, huge piezo-resistive arrangement district and metallic aluminium section district is made protective layer, continue to carve
Erosion, to substrate silicon, then selects potassium hydroxide to erode below doped silicon Duan Qu, huge piezo-resistive arrangement district and metallic aluminium section district and two
The substrate silicon of side, obtains cantilever beam.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For Yuan, on the premise of without departing from the technology of the present invention principle, it is also possible to make some improvement and deformation, these improve and deformation
Also should be regarded as protection scope of the present invention.
Claims (9)
1. cantilever beam biochemical sensor based on huge piezo-resistive arrangement, it is characterised in that: include data acquisition unit, four-line measurement electricity
Road, AD7794 analog-digital converter, MSP430F169 single-chip microcomputer and LCD12864 LCDs, described data acquisition unit will gather
The data arrived by four-line measurement circuit transmission to AD7794 analog-digital converter, export after the conversion of AD7794 analog-digital converter to
MSP430F169 single-chip microcomputer, is sent to LCD12864 LCDs by MSP430F169 single-chip microcomputer, in LCD12864 liquid crystal
Show screen display；
Described data acquisition unit includes substrate and is sequentially fixed at described several cantilever beams suprabasil, several described cantilevers
Beam is connected by same constant current source power supply, by the connecting line of metallic aluminium material between the fixing end of described adjacent two cantilever beams
It is connected；Detection zone that described cantilever beam includes setting gradually, metallic aluminium Duan Qu, huge piezo-resistive arrangement district, doped silicon section district, described inspection
Survey district to be formed by self assembly rear surface, end modified high molecular sensitive material or the bioactive molecule material in metallic aluminium section district,
Being positioned at the free end of overarm arm, described doped silicon section district is positioned at the fixing end of cantilever beam, and described huge piezo-resistive arrangement district is that sial is different
Matter is tied, and the fixing end of described cantilever beam is provided with potential measurement point.
Cantilever beam biochemical sensor based on huge piezo-resistive arrangement the most according to claim 1, it is characterised in that: described cantilever
The both sides of beam are equipped with common-mode signal collocation structure, and each cantilever beam utilizes adjacent thereto two common-mode signal collocation structure to disappear
Except noise, and adjacent two cantilever beams share a common-mode signal collocation structure.
Cantilever beam biochemical sensor based on huge piezo-resistive arrangement the most according to claim 2, it is characterised in that: described common mode
Signal compensation structure is identical with the size of described cantilever beam and composition material.
Cantilever beam biochemical sensor based on huge piezo-resistive arrangement the most according to claim 2, it is characterised in that: described common mode
Signal compensation structure is connected with described cantilever beam by same constant current source power supply, described common-mode signal collocation structure and described cantilever beam
Between be connected by the connecting line of metallic aluminium material.
Cantilever beam biochemical sensor based on huge piezo-resistive arrangement the most according to claim 1, it is characterised in that: described metal
The width in Lv Duan district is 70-100 m, a length of 35-60 m, the width in described doped silicon section district be 70-100 m, a length of 6
m。
Cantilever beam biochemical sensor based on huge piezo-resistive arrangement the most according to claim 1, it is characterised in that: described substrate
For soi wafer.
Cantilever beam biochemical sensor based on huge piezo-resistive arrangement the most according to claim 1, it is characterised in that: described four lines
The MUX and filtering and amplifying circuit being sequentially connected it is provided with between measuring circuit processed and described AD7794 analog-digital converter.
Cantilever beam biochemical sensor based on huge piezo-resistive arrangement the most according to claim 7, it is characterised in that: described amplification
Filter circuit includes the first order amplifying circuit being made up of resistance R1, R2, R3, R4 and difference amplifier AD8216, by resistance R5
The second order RC lowpass filter constituted with electric capacity C1, resistance R7 and electric capacity C2, is put with difference by resistance R6, resistance R8, electric capacity C5
The second level amplifying circuit that big device AD8216 is constituted, by accurate transport and placing device OPA177, resistance R9, resistance R10, electric capacity C3 and electric capacity
The second order active low-pass filter circuit that C4 is constituted.
9. the manufacture method of cantilever beam, it is characterised in that comprise the following steps:
Step one, material prepares；Select soi wafer as substrate, first substrate is carried out, then marks in substrate
One section of district, two-stage nitration district；
Step 2, doped silicon section district makes；The two-stage nitration district of step one labelling inject boron ion, high temperature rapid thermal annealing activate boron from
Son, then the silicon in one section of district of employing photoetching and RIE lithographic method etching is to silicon dioxide sacrificial layer, thus obtains doped silicon
Section district；
Step 3, metallic aluminium section district makes；Spin coating photoresist in doped silicon section district and silicon dioxide sacrificial layer surface, then spatters
Penetrate metallic aluminium, and chemical wet etching metallic aluminium structure, form metallic aluminium section district；
Step 4, huge piezo-resistive arrangement makes；Utilize lift-off stripping technology, in the combination in metallic aluminium section district Yu doped silicon section district
Place obtains sial hetero-junctions, forms huge piezo-resistive arrangement district, and makes silicon dioxide layer of protection in huge piezo-resistive arrangement district；
Step 5, discharges cantilever beam；The silicon dioxide of doped silicon Duan Qu, huge piezo-resistive arrangement district and metallic aluminium Duan Qu both sides is carried out
Chemical wet etching, and after the edge in doped silicon Duan Qu, huge piezo-resistive arrangement district and metallic aluminium section district is made protective layer, continue to be etched to
Substrate silicon, then selects potassium hydroxide to erode below doped silicon Duan Qu, huge piezo-resistive arrangement district and metallic aluminium section district and both sides
Substrate silicon, obtains cantilever beam.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106895886A (en) * | 2017-04-13 | 2017-06-27 | 南京信息工程大学 | High sensitivity gas flow surveying instrument and method based on huge piezoresistance sensor |
| CN107727266A (en) * | 2017-09-21 | 2018-02-23 | 广东电网有限责任公司惠州供电局 | A kind of MEMS temperature sensor and its switch cubicle temp measuring system |
| CN108592965A (en) * | 2018-04-20 | 2018-09-28 | 北京大学 | Flexible piezoresistance type microcantilever beam sensor and preparation method thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6237399B1 (en) * | 1998-01-16 | 2001-05-29 | Bellave S. Shivaram | Cantilever having sensor system for independent measurement of force and torque |
| US20030062193A1 (en) * | 2001-09-07 | 2003-04-03 | Jacob Thaysen | Flexible structure with integrated sensor/actuator |
| CN1536336A (en) * | 2003-04-10 | 2004-10-13 | 北京大学 | Microcantilever sensor and its making method |
| CN1536335A (en) * | 2003-04-10 | 2004-10-13 | 北京大学 | Microcantilever sensor and its making method |
| CN101324473A (en) * | 2008-07-31 | 2008-12-17 | 北京大学 | Piezoresistance sensor chip and machining process thereof |
| CN101492150A (en) * | 2009-02-20 | 2009-07-29 | 中国科学院上海微系统与信息技术研究所 | Micro-machine overhang beam simultaneously implementing driving and self-cleaning with single integrated resister |
| CN201331399Y (en) * | 2008-11-14 | 2009-10-21 | 浙江大学 | Piezoresistive micro cantilever beam sensor based on stress concentration of slots |
| CN102798498A (en) * | 2012-08-23 | 2012-11-28 | 沈阳工业大学 | Multi-range integrated pressure sensor chip |
| EP2454573B1 (en) * | 2009-07-17 | 2013-12-04 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Nems comprising alsi alloy based transduction means |
| CN103592464A (en) * | 2013-11-06 | 2014-02-19 | 中北大学 | Silicon piezoresistive type accelerometer carrying out detection based on Josephson effect |
| CN105137119A (en) * | 2015-07-31 | 2015-12-09 | 无锡壹资半导体科技有限公司 | Thin cantilever piezoresistive accelerometer and manufacturing method thereof |
| CN205607997U (en) * | 2016-05-12 | 2016-09-28 | 南京信息工程大学 | Cantilever beam biochemical sensor based on huge pressure drag structure |
-
2016
- 2016-05-12 CN CN201610318148.9A patent/CN105974104B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6237399B1 (en) * | 1998-01-16 | 2001-05-29 | Bellave S. Shivaram | Cantilever having sensor system for independent measurement of force and torque |
| US20030062193A1 (en) * | 2001-09-07 | 2003-04-03 | Jacob Thaysen | Flexible structure with integrated sensor/actuator |
| CN1536336A (en) * | 2003-04-10 | 2004-10-13 | 北京大学 | Microcantilever sensor and its making method |
| CN1536335A (en) * | 2003-04-10 | 2004-10-13 | 北京大学 | Microcantilever sensor and its making method |
| CN101324473A (en) * | 2008-07-31 | 2008-12-17 | 北京大学 | Piezoresistance sensor chip and machining process thereof |
| CN201331399Y (en) * | 2008-11-14 | 2009-10-21 | 浙江大学 | Piezoresistive micro cantilever beam sensor based on stress concentration of slots |
| CN101492150A (en) * | 2009-02-20 | 2009-07-29 | 中国科学院上海微系统与信息技术研究所 | Micro-machine overhang beam simultaneously implementing driving and self-cleaning with single integrated resister |
| EP2454573B1 (en) * | 2009-07-17 | 2013-12-04 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Nems comprising alsi alloy based transduction means |
| CN102798498A (en) * | 2012-08-23 | 2012-11-28 | 沈阳工业大学 | Multi-range integrated pressure sensor chip |
| CN103592464A (en) * | 2013-11-06 | 2014-02-19 | 中北大学 | Silicon piezoresistive type accelerometer carrying out detection based on Josephson effect |
| CN105137119A (en) * | 2015-07-31 | 2015-12-09 | 无锡壹资半导体科技有限公司 | Thin cantilever piezoresistive accelerometer and manufacturing method thereof |
| CN205607997U (en) * | 2016-05-12 | 2016-09-28 | 南京信息工程大学 | Cantilever beam biochemical sensor based on huge pressure drag structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106895886A (en) * | 2017-04-13 | 2017-06-27 | 南京信息工程大学 | High sensitivity gas flow surveying instrument and method based on huge piezoresistance sensor |
| CN107727266A (en) * | 2017-09-21 | 2018-02-23 | 广东电网有限责任公司惠州供电局 | A kind of MEMS temperature sensor and its switch cubicle temp measuring system |
| CN108592965A (en) * | 2018-04-20 | 2018-09-28 | 北京大学 | Flexible piezoresistance type microcantilever beam sensor and preparation method thereof |
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