CN1740796A - Pressure resistance large overloading accelerometer and preducing method thereof - Google Patents
Pressure resistance large overloading accelerometer and preducing method thereof Download PDFInfo
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- CN1740796A CN1740796A CN 200510012252 CN200510012252A CN1740796A CN 1740796 A CN1740796 A CN 1740796A CN 200510012252 CN200510012252 CN 200510012252 CN 200510012252 A CN200510012252 A CN 200510012252A CN 1740796 A CN1740796 A CN 1740796A
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Abstract
The present invention provides a piezoresistive large-overload accelerometer. It is made up by adopting Si base MEMS technique. Said invention also provides the concrete steps of its preparation method. It can convert mechanical impact signal into electric signal, after the output signal is undergone the processes of amplification and temperature compensation, it can be used for calibrating acceleration extent.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to be used in the MEMS (micro electro mechanical system) measuring the pressure resistance type inertial sensor of big overloading acceleration (1000g-100000g).
Background technology
Adopt traditional devices to be difficult to make the accelerometer of Chinese People's Anti-Japanese Military and Political College's overload, the method that adopts is most at present makes this kind device for the manufacturing process that utilizes microelectromechanical systems adopts the SiC material, the SiC deposition of materials is formed structure of composite membrane on the silicon materials substrate, by the SiC implanting impurity ion is formed piezoresistance, by the method for back etching the Si substrate etching at the SiC film back side is fallen afterwards, utilize the pressure drag characteristic of SiC material, when foreign impacts is arranged, the SiC film is owing to deformation takes place inertia, thereby its surperficial stress distribution is changed, pressure drag resistance on it changes thereupon, just this variation can be read by Wheatstone bridge, thereby realize of the output of extraneous acceleration signal to electric signal.But, because the preparation technology of SiC material is cumbersome, and and the substrate Si material between exist the coupling defective, thereby there is bigger stress in surface of contact between the two, makes the output of electric bridge zero-bit bigger.Lower according to its sensitivity of relevant report in addition, and it is incompatible in integrated circuit technology, this makes this kind device will have in actual applications than the complex interface circuit to come the electric bridge output signal is amplified and temperature compensation, and this has increased cost undoubtedly, has reduced integrated level.
Summary of the invention
It is poor to the present invention seeks to solve existing big overload accelerometer response, with the incompatible problem of integrated circuit technology.
The invention provides the big overload accelerometer of pressure resistance type of a kind of Si of employing base MEMS technology processing, this accelerometer has not only improved sensitivity, but also possesses the characteristics with the IC process compatible, provides necessary condition for realizing real integrated accelerometer.
The technical solution adopted for the present invention to solve the technical problems is: the piezoresistive effect that utilizes the Si material, its bulk resistor also changes thereupon when suffered stress changes, form piezoresistance by injecting at the Si surface ion, and resistance is connected into the form of Wheatstone bridge, and the zone below the pressure drag hollowed out form a film, when foreign impacts, deformation takes place in film under inertia effect, thereby a pair of resistance that makes electric bridge becomes big, a pair of resistance decreasing, thereby electric bridge output changes, thereby has realized the transformation from mechanical impact signal to electric signal, output signal just can be used for demarcating acceleration after amplification and temperature compensation size.
The big overload accelerometer of pressure resistance type according to the present invention, concrete structure comprises following a few part:
1) responsive mass, when accelerometer is subjected to the impact of sensitive direction, the inertia of mass will make it produce displacement deformation with respect to silicon substrate.
2) four crossbeams, crossbeam is used as the sway brace of mass, and the while is as the preparation zone of pressure drag.When impacting generation, mass pulling crossbeam occurs bending and deformation, thereby the stress in pressure drag zone on the crossbeam is changed.
3) piezoresistance lays respectively at the place that four crossbeams and frame have a common boundary, and when crossbeam generation deformation, at distance crossbeam and frame intersection a distance a STRESS VARIATION linear zone is arranged, and is the only zone of preparation pressure drag.
4) metal connecting line is electrically connected four pressure drags by metal connecting line; Can form a Wheatstone bridge, signal is exported.
5) frame, frame are used for installing whole accelerometer, play effect fixing and that support.Mass is connected on the frame by four crossbeams, and metal wire is to be formed on the frame by sputter, and four pressure drags are electrically connected.
The following describes the concrete preparation method of the big overload accelerometer of pressure resistance type of the present invention, according to the concrete preparation method of accelerometer of the present invention can be summarized as following some:
(1) preparation of pressure drag.This is a very important step in the whole work flow, and the group technology that the present invention has adopted ion injection, surface oxidation, propelling to combine forms piezoresistance on substrate, and the pressure drag of Sheng Chenging has good electricity matching performance like this.And four pressure drags are connected into Wheatstone bridge by metal wire.
(2) back of the body chamber corrosion.Adopt the method (as the KOH etch) of wet etching to form the groove that 380um is dark at the back side of silicon substrate among the present invention, thereby form a silicon thin film that 30um is thick, this film is exactly the basis that is used for forming crossbeam and mass.
(3) structure discharges.After the corrosion of back of the body chamber, we utilize the method (as ICP inductively coupled plasma etching method) of etching to remove useless zone on the film, thereby have formed responsive mass and crossbeam.
(4) silicon and glass bonding.At last, the glass cap that the method by anode linkage shields at silicon chip front bonding last layer is to make things convenient in the test process encapsulation to accelerometer.
The big overload accelerometer response of pressure resistance type according to the present invention is higher, and processing technology and ic process compatibility are easy to realize; Adopt pressure drag working signal treatment circuit simple; Be convenient to design the anti high overload structure.
The invention has the beneficial effects as follows that simple in structure, technology realizes convenient, have the characteristic with the integrated circuit compatibility, sensitivity simultaneously is higher, and shock resistance is better.
Description of drawings
Below in conjunction with accompanying drawing the present invention is illustrated in further detail:
Fig. 1 is an arrangements of accelerometers synoptic diagram of the present invention;
Fig. 2 is the signal testing schematic diagram;
Fig. 3 is the silicon materials processing process;
Fig. 4 is the back of the body chamber that KOH corrosion back forms;
Fig. 5 is the positive diagram of device that actual processing generates;
Fig. 6 is the device detection signal curve under 25000g impacts.
Embodiment
Below with reference to accompanying drawing of the present invention, most preferred embodiment of the present invention is described in more detail.
Figure 1 shows that arrangements of accelerometers synoptic diagram of the present invention, total comprises responsive mass, four crossbeams, the pressure drag on the crossbeam, metal connecting line and pressure welding point and silicon substrate.
The effect and the annexation of each several part are as follows:
1) responsive mass 2, when accelerometer is subjected to the impact of sensitive direction, the inertia of mass 2 will make it produce displacement deformation with respect to silicon substrate 1.
2) four crossbeams 3, crossbeam 3 is used as the sway brace of mass 2, and the while is as the preparation zone of pressure drag.When impacting generation, mass 2 pulling crossbeams 3 occur bending and deformation, thereby the stress in pressure drag zone on the crossbeam 3 is changed.
3) piezoresistance 4, lay respectively at the place that four crossbeams 3 and frame have a common boundary, obtain, when deformation takes place crossbeam 3 by the actual experiment data, having located a STRESS VARIATION linear zone at distance crossbeam 3 and frame intersection certain distance (approximately 25um), is the only zone of preparation pressure drag.
4) metal connecting line 5, by metal connecting line (as the Al metal) four pressure drags 4 formed a Wheatstone bridge, and signal is exported.
5) frame, frame are used for installing whole accelerometer, play effect fixing and that support.Mass 2 is connected on the frame by four crossbeams 3, and metal wire 5 is to be formed on the frame by sputter, and four pressure drags are electrically connected.
Structure below in conjunction with accelerometer of the present invention illustrates its principle of work.When there is an acceleration signal on vertical and mass 2 surfaces, mass 2 produces inertia displacement, drive its supporting traverse 3 on every side deformation take place, thereby the stress distribution on the crossbeam 3 is changed, and then the pressure drag resistance on the crossbeam 3 is changed, pressure drag 4 change in resistance directions on the counterpart arm are identical, and it is big that promptly a pair of pressure drag becomes, a pair of diminishing.Pressure drag 4 connects into the form of Wheatstone bridge by metal wire 5, on two end points of electric bridge, apply an operating voltage, thereby just there is voltage signal to read at two other end points, signal by peripheral circuit amplifies and temperature compensation, and we have just realized the transformation from extraneous physical shock signal to electrical signal.The effect of pressure welding point is to be used for signal is drawn out to above the test pin.At first on silicon materials substrate 1, form the piezoresistance injection zone by photoetching, inject the formation pressure drag by ion, utilize photoetching to form back of the body chamber corrosion area at the silicon chip back side afterwards, adopt KOH corroding method corrosion silicon to form the back of the body chamber that 380um is dark, pressure drag 4 is on the thick silicon thin film of about 30um.At the positive sputter Al of silicon chip, form the line shape afterwards, pressure drag 4 is formed an electric bridge by photoetching.Utilize photoetching to form the shape of front mass 2 and crossbeam 3, the method by the ICP etching etches away the redundance on the silicon thin film, forms beam and mass.Utilize anode linkage to be bonded together in glass and silicon chip front at last, play protective effect, just can form independent one by one accelerometer chip by scribing to the silicon chip Facad structure.
Shown the Wheatstone bridge of forming by four pressure drags 4 among Fig. 2, four resistance equate when foreign impacts is zero, be R1=R2=R3=R4=R, under certain impact, two pressure drags of four pressure drag correspondences have identical variation tendency, and when structure is fully during symmetry, four resistance changes and has following relational expression to set up: Δ R
1=Δ R
2=Δ R
3=Δ R
4V
Out=V* (R
4+ Δ R
4)/(R
1+ R
4+ Δ R
1+ Δ R
4)-V* (R
3+ Δ R
3)/(R
2+ R
3+ Δ R
2+ Δ R
3)=V* ((Δ R
3/ R)
1,3+ (Δ R/R)
2,4)/2
(Δ R/R)=π wherein
1σ
1+ π
2σ
2, π in the formula
1, π
2Be the vertical and horizontal piezoresistance coefficient, the acquisition of can tabling look-up, σ
1, σ
2Represent the stress intensity parallel with vertical respectively with direction of current.
We have drawn and have realized mainly being divided into following process by the processing process of this structure among Fig. 3:
1) preparation of pressure drag.Select for use (100) crystal orientation silicon chip (410um is thick, 4 cun of diameters) as substrate 1, adopt SiO
2 Material 8 and Si
3N
4Material 9 forms the pressure drag injection zone as lithographic mask layer by photoetching, injects (P by ion
-Doping type) method forms pressure drag, and the method by high-temperature oxydation (1100 ℃) is activated the injection ion afterwards, thereby finally forms piezoresistance 4, shown in (a) among Fig. 3.Method by diffusion has formed the pressure drag contact region 10 of low-resistivity (high-dopant concentration) at the two ends of pressure drag afterwards, purpose be when resistance is drawn metal wire can and pressure drag between form good Ohmic contact, as (b) among the figure.In order to prevent the pressure drag electric leakage, we also form a N by the method for injecting around pressure drag
+Bearer bar 6, thus an anti-inclined to one side PN junction between pressure drag and bearer bar, formed, effectively reduced electric leakage, as (c) among the figure.Method by sputter forms layer of metal Al on substrate afterwards, and photoetching is after excessive erosion forms metal connecting line 5, thereby four pressure drags are connected into the form of Wheatstone bridge, as (d) among the figure.
2) back of the body chamber corrosion.In this step, at first will be at silicon chip pros and cons deposit Si
3N
4Material 9 forms protective seam, to prevent that corrosive liquid is to the influence of device live part in wet etching course.By photoetching the silicon chip back side is treated the Si of corrosion area afterwards
3N
4Etch away, form corrosion window.To adopt mass ratio be 30% KOH corrosive liquid erodes away the deep trouth (among Fig. 4 as can be seen) of a 380um from this window, corrosion rate is about 1um/min, because the KOH corrosion is anisotropic (being the corrosion rate difference of KOH to each crystal orientation of silicon crystal), thereby the groove of Xing Chenging is the shape of a terrace with edge overleaf, and the angle between its side and the ground is 54.74 °.So just stayed the film of an about 30um in the front of silicon chip, this film is exactly the basis that is used for forming crossbeam and mass, as (e) among the figure.
3) structure discharges.After the corrosion of back of the body chamber, in the positive zone of wanting the etching break-through that forms of silicon chip, will treat the SiO in break-through zone by the method for RIE (reactive ion etching) by photoetching
2 Layer 8 etches away.Adopt the method for ICP (inductively coupled plasma etching) etching afterwards, react and this part silicon is removed by the silicon that exposes out in plasma (mainly be F base atomic group) and the silicon chip surface break-through zone, thereby crossbeam 3 and mass 2 structures have been formed, as (f) among the figure.This step is most important in whole process flow, should make the sidewall of the crossbeam that formed by etching and mass vertical and smooth as far as possible, with the interference that the reduces accelerometer inoperative direction influence to the device output signal.
4) silicon and glass bonding.In order to protect the structure in accelerometer front, the present invention is a glass cap on bonding above the silicon chip Facad structure.At first select Pyrex 7 for use, method by AOE (advanced oxidation layer etching) etching is at dark groove of 10um of glass surface etching, method by anode linkage is bonded together the groove of glass down with the silicon chip front then, thereby make movable structures such as the crossbeam in silicon chip front and mass just in time be in the groove below of glass, as (g) among the figure.When accelerometer is subjected to the impact of some directions and when deformation took place, the groove of its top just provided its movable space, and this protection structure is very useful in test process, and it can protect effective parts of accelerometer not destroyed by the external world.
The preparation of pressure drag, the deep trouth corrosion forms film, ICP break-through releasing structure, silicon/glass bonding, scribing.The method that we adopt ion to inject forms pressure drag, and around pressure drag with the earth leakage protection of highly doped (N+) zone formation to pressure drag.We have determined that by mini-test a kind of injection, propelling, surface oxidation process combined step make pressure drag, thereby have guaranteed the consistance of pressure drag resistance, thereby can reduce the output at zero point of electric bridge.Corrosion has anisotropic characteristics because the KOH corrosive liquid is to silicon; be KOH to silicon crystal＜100;＜110〉corrosion speed in crystal orientation is the fastest; and right＜111〉corrosion speed in crystal orientation is the slowest; we utilize these characteristics to adopt the KOH corrosive liquid of 30% (mass ratio) to form a funnel type deep trouth up to the film that forms a 30um left and right thickness in the corrosion of the silicon chip back side; adopt the method for ICP (plasma etching) break-through to form crossbeam and mass then; unify a glass cap to play the effect of protection Facad structure in the silicon chip front by electrostatic bond afterwards, generate one by one independently unit by scribing at last.
Fig. 4 is formed back of the body chamber for KOH corrodes, and we can see the membrane structure of bottom from back of the body chamber.
Fig. 5 is the bonding resulting resulting devices of scribing afterwards, and we can see beam and mass, metal connecting line, pressure welding point etc. from the front.Article two, black surround is the edge of glass bonding region longitudinally.We have carried out packaging and testing to device afterwards, Figure 6 shows that the signal curve that records under 2.5 ten thousand g impact, and its sensitivity has reached 640nV/g, about this sensitivity than existing accelerometer is doubled.
Although disclose specific embodiments of the invention and accompanying drawing for the purpose of illustration, its purpose is to help to understand content of the present invention and implement according to this, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to most preferred embodiment and the disclosed content of accompanying drawing.
Claims (10)
1. big overload accelerometer of pressure resistance type specifically comprises following structure:
Responsive mass is used for making it produce displacement deformation with respect to silicon substrate when accelerometer is subjected to the impact of sensitive direction;
Four crossbeams are used as the preparation zone of the sway brace and the pressure drag of mass;
Piezoresistance lays respectively at the place that four crossbeams and frame have a common boundary;
Metal connecting line is used for four pressure drags are electrically connected;
Frame is used for installing whole accelerometer, and mass is connected on the frame by four crossbeams.
2. the big overload accelerometer of pressure resistance type as claimed in claim 1 is characterized in that: four pressure drags connect into a Wheatstone bridge by metal connecting line.
3. the preparation method of the big overload accelerometer of pressure resistance type specifically may further comprise the steps:
1) preparation of pressure drag,
Adopt the ion group technology that injection-surface oxidation-propelling combines on substrate, to form piezoresistance, and four pressure drags are connected into Wheatstone bridge by metal wire;
2) back of the body chamber corrosion,
Form a groove by wet etching at the back side of silicon substrate, thereby form a silicon thin film;
3) structure discharges,
Utilize lithographic method to remove useless zone on the film, form responsive mass and crossbeam;
4) silicon and glass bonding,
The glass cap that method by anode linkage shields at silicon chip front bonding last layer.
4. the preparation method of the big overload accelerometer of pressure resistance type as claimed in claim 3 is characterized in that: the corrosion of back of the body chamber adopts the KOH corroding method to form groove at the back side of silicon substrate.
5. the preparation method of the big overload accelerometer of pressure resistance type as claimed in claim 3 is characterized in that: when structure discharges, adopt the inductively coupled plasma etching method, form responsive mass and crossbeam.
6. the preparation method of the big overload accelerometer of pressure resistance type as claimed in claim 3, it is characterized in that: metal wire is formed on the frame by sputter, and four pressure drags are electrically connected.
7. the preparation method of the big overload accelerometer of pressure resistance type as claimed in claim 3, it is characterized in that: when silicon and glass bonding, select Pyrex for use, method by the AOE etching is at groove of glass surface etching, and the method by anode linkage is bonded together the groove of glass down with the silicon chip front then.
8. the preparation method of the big overload accelerometer of pressure resistance type as claimed in claim 3 is characterized in that: after the corrosion of back of the body chamber, in the positive zone of wanting the etching break-through that forms of silicon chip, will treat the SiO in break-through zone by photoetching by the method for reactive ion etching
2Layer etches away.
9. the preparation method of the big overload accelerometer of pressure resistance type as claimed in claim 3, it is characterized in that: form after the piezoresistance, method by diffusion has formed the pressure drag contact region of low-resistivity at the two ends of pressure drag, when resistance is drawn metal wire can and pressure drag between form good Ohmic contact.
10. the preparation method of the big overload accelerometer of pressure resistance type as claimed in claim 3 is characterized in that: form after the piezoresistance, further form a N by the method for injecting around pressure drag
+Bearer bar, thus an anti-inclined to one side PN junction between pressure drag and bearer bar, formed, reduce the pressure drag electric leakage.
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| CN106564857A (en) * | 2016-11-14 | 2017-04-19 | 北方电子研究院安徽有限公司 | Method of making self-aligned MEMS piezoresistive accelerometer |
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| CN102980694B (en) * | 2012-11-29 | 2015-07-29 | 北京大学 | Without the MEMS piezoresistive pressure transducer and preparation method thereof of strain films structure |
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| CN106564857A (en) * | 2016-11-14 | 2017-04-19 | 北方电子研究院安徽有限公司 | Method of making self-aligned MEMS piezoresistive accelerometer |
| CN107907710A (en) * | 2017-09-30 | 2018-04-13 | 西安交通大学 | A kind of two axle acceleration sensor chip of MEMS piezoresistive and preparation method thereof |
| CN107907710B (en) * | 2017-09-30 | 2019-10-11 | 西安交通大学 | A kind of two axle acceleration sensor chip of MEMS piezoresistive and preparation method thereof |
| CN107727885A (en) * | 2017-11-13 | 2018-02-23 | 中北大学 | The pressure resistance type three axis accelerometer of height output stability |
| CN108534942A (en) * | 2018-03-28 | 2018-09-14 | 西南交通大学 | A kind of minute-pressure resistive sensor vibration and temperature interference compensation model and system |
| CN108592965A (en) * | 2018-04-20 | 2018-09-28 | 北京大学 | Flexible piezoresistance type microcantilever beam sensor and preparation method thereof |
| CN112093771A (en) * | 2019-06-17 | 2020-12-18 | 芜湖天波光电技术研究院有限公司 | Single-shaft high-impact acceleration sensor and manufacturing method thereof |
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