CN101858929A - Capacitive micro-acceleration sensor with symmetrically combined elastic beam structure and production method thereof - Google Patents
Capacitive micro-acceleration sensor with symmetrically combined elastic beam structure and production method thereof Download PDFInfo
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Abstract
The invention relates to a capacitive micro-acceleration sensor with a symmetrically combined elastic beam structure and a production method thereof. The acceleration sensor comprises a symmetric center mass block, an external support frame, eight symmetric straight beams, two symmetric frame beams, a combined elastic beam structure, an upper cover plate and a lower cover plate, wherein the eight symmetric straight beams are used for connecting the center mass block with the external support frame, and the combined elastic beam structure is formed by connecting eight symmetric L-shaped beams together; and the other end of each straight elastic beam connected with the frame beams is connected to the middle or a vertex angle at the top end and the bottom end of the lateral face of the center mass block, and the other end of each L-shaped beam connected with the frame beams is connected to the inner side face of the external support frame. The acceleration sensor adopts the combined elastic beam structure which is formed by connecting the symmetric straight beams, the frame beams and the L-shaped beams together, has high symmetry and can remarkably reduce the cross-sensitivity of the sensor; and the sensor is produced by adopting a microelectronic mechanical system technology and is the capacitive micro-acceleration sensor with high sensitivity.
Description
Technical field
The present invention relates to symmetrical combined elastic girder construction condenser type micro-acceleration sensor, belong to the microelectromechanical systems field.
Background technology
The development of MEMS (micro electro mechanical system) has greatly promoted the progress of sensor technology, has realized the microminiaturization of acceleration transducer.Utilize capacitance acceleration transducer that micromachined technology makes in measuring accuracy, temperature characterisitic, utilize electrostatic force to carry out closed-loop measuring and self check and easily and advantage that the aspect has such as electronic circuit is integrated, can be widely used in many fields such as petroleum prospecting, seismic monitoring, Medical Instruments, Aero-Space, weaponry, have wide market application prospect.
Common micro-machine acceleration transducer mainly contains three kinds of pressure resistance type, piezoelectric type and condenser types by responsive principle branch.The ultimate principle of piezoelectric acceleration transducer is utilized piezoelectric effect, comes sense accelerations by measuring change in voltage that piezoelectric effect produces.This acceleration transducer relatively simple for structure, but be difficult to measure normal acceleration, temperature coefficient is bigger, and the linearity is also bad.The piezoresistive micro-accelerometer utilization be piezoresistive effect, the variation of extraneous acceleration is converted into the change that magnitude of voltage is detected at the pressure drag material two ends, and its advantage that has is: simple in structure, interface circuit is easy to realize, shortcoming is that temperature coefficient is bigger, and is relatively more responsive to temperature.
The ultimate principle of condenser type micro-acceleration sensor is exactly that variation with extraneous acceleration is converted into changes in capacitance.The movable capacitor plate of mass conduct that condenser type micro-acceleration sensor is generally supported by elastic beam, the fixed capacity pole plate with both sides constitutes Differential Detection electric capacity respectively.When extraneous acceleration acted on mass, elastic beam distortion caused that mass produces displacement, causes the Differential Detection changes in capacitance, detected the changes in capacitance amount and then just can measure the size of acceleration with the interface circuit of periphery.
Capacitance acceleration transducer is for pressure resistance type or piezoelectric type; have very high sensitivity and accuracy of detection, good stability, temperature drift is little; and good overload protection ability is arranged, and can utilize electrostatic force to realize feedback closed loop control, can significantly improve the performance of sensor.
The method of making condenser type micro-acceleration sensor has surface micromachined method and body micro-machining.The benefit that adopts the surface micromachined method to make capacitance acceleration transducer is and ic process compatibility, can integrated signal processing circuit, and cost is low, noise is big, shortcomings such as resolution is lower, dynamic range is little, poor stability but also exist.And the advantage that adopts silicon body micro-machining to make capacitance acceleration transducer is advantages such as noise is little, resolution is high, dynamic range is big, good stability, and shortcoming is that volume is big slightly.
The capacitance acceleration transducer that general silicon body micro-machining is made is done movable electrode with the upper and lower surface of mass that elastic beam supports, and then in the above and below of silicon chip silicon chip of each bonding or glass sheet, part corresponding to the mass electrode on it is also made electrode, with the electrode formation differential capacitance on the mass.But bigger cross sensitivity can be caused in the elastic beam of common this structure and responsive mass center not in same plane, the acceleration signal on the promptly non-sensitive direction also can cause bigger output.In order to suppress cross sensitivity, the present invention proposes a kind of symmetrical combined elastic girder construction capacitance acceleration transducer, two silicon chips are carried out Si-Si bonding behind the single face corrosion mass figure respectively again, two-sided etching forms the two-sided centroplasm gauge block that the combined elastic beam is all arranged, can significantly reduce the cross sensitivity of device, making the reliability of device higher, is a kind of high performance condenser type micro-acceleration sensor.
Summary of the invention
The object of the present invention is to provide a kind of symmetrical combined elastic girder construction condenser type micro-acceleration sensor and preparation method thereof, is a kind ofly can significantly suppress cross sensitivity, high performance micro-machine acceleration transducer.
Symmetrical combined elastic girder construction condenser type micro-acceleration sensor provided by the invention, comprise symmetrical combined elastic girder construction and upper and lower cover plate that centroplasm gauge block, outer support frame, the centroplasm gauge block of a symmetry are connected with outer support frame, it is characterized in that:
(1) the centroplasm gauge block is made up of top mass and bottom mass, and the combined elastic girder construction is made up of the top combined elastic beam and the bottom combined elastic beam of symmetry, and outer support frame is made up of laterally zygomorphic apical support framework and bottom support frame;
(2) the centroplasm gauge block is as the movable electrode that detects electric capacity, and as the fixed electorde that detects electric capacity, upper and lower cover plate is positioned at the upper and lower faces of movable electrode to upper and lower cover plate respectively;
(3) the combined elastic girder construction is linked together by eight straight elastic beams of symmetry, two symmetrical frame beams, eight symmetrical L beams and constitutes;
(4) end of combined elastic girder construction is connected the centre or the drift angle of top, centroplasm gauge block side and bottom, and the other end is connected the outer support frame medial surface; Also be that described combined elastic beam is connected to form by straight elastic beam, Vierendeel girder and L beam successively; Wherein an end of L beam is connected with Vierendeel girder, and the other end is connected the optional position of outer support frame, and an end of straight elastic beam is connected or is connected with a top of Vierendeel girder with Vierendeel girder is middle; The former, the other end of straight elastic beam is connected the centre of centroplasm gauge block side, the latter, the other end of straight elastic beam is connected the side drift angle of centroplasm gauge block;
(5) center mass cube electrode lead-in wire derby is positioned at the outer support frame upper surface, and upper cover plate contact conductor derby is positioned at the upper surface of upper cover plate, and lower cover contact conductor derby is positioned at the lower surface of lower cover;
(6) capacitance gap is produced in the lower surface of upper cover plate and the upper surface of lower cover;
(7) the overload protection limited block is produced in the upper surface capacitance gap of the lower surface of upper cover plate and lower cover; Mass contact conductor gap is produced on the lower surface of upper cover plate.
Described combined elastic girder construction is connected the centre or the drift angle of top, centroplasm gauge block side and bottom respectively by eight straight elastic beams of symmetry, eight symmetrical L beams are connected the outer support frame medial surface, eight straight beams and eight L beams are joined together to form the combined elastic girder construction by two symmetrical frame beams, and the combined elastic beam of centroplasm gauge block upper and lower faces is symmetrically distributed.
The shape of described eight straight beams, two Vierendeel girders, eight L beams, size are consistent respectively.
L beam one end of described formation combined elastic beam is connected with Vierendeel girder, and the other end can be connected the optional position of outer support frame medial surface.
Described centroplasm gauge block upper surface and lower surface are rectangle or are foursquare.
Described center mass cube electrode lead-in wire derby is support frame upper surface (electrode of upper cover plate lower surface is drawn in the gap) externally, realizes electrical isolation by insulation course between centroplasm gauge block and the upper and lower cover plate.
Symmetrical combined elastic girder construction condenser type micro-acceleration sensor of the present invention is that as follows method for making is made:
(1) upper surface of the lower surface of upper cover plate silicon chip and lower cover silicon chip corrosion formation capacitance gap and upper cover plate silicon chip lower surface electrode are drawn the gap;
(2) the upper surface capacitance gap surface corrosion of the lower surface of upper cover plate silicon chip and lower cover silicon chip forms the overload protection limited block;
(3) the upper surface photoetching top mass of the lower surface of top mass silicon chip and bottom mass silicon chip and bottom mass figure, anisotropic etch obtains top mass and bottom mass, and corrosion depth is by the thickness decision of the thickness and the combined elastic beam of silicon chip;
(4) top mass silicon chip and bottom mass silicon chip are aimed at the center mass block structure that Si-Si direct bonding forms symmetry;
(5) upper and lower cover plate silicon chip surface is made insulating material, as the insulation course between mass silicon chip and the upper and lower cover plate silicon chip;
(6) by the combined elastic beam on the upper and lower surface of etching release centroplasm gauge block, aim at pre-bonding with lower cover silicon chip upper surface then, aim at pre-bonding with upper cover plate silicon chip lower surface again, carry out whole annealing process again after pre-bonding is finished;
(7) isotropy or anisotropic etch upper cover plate silicon chip form center mass cube electrode lead-out groove (to draw interstitial site corresponding up and down with electrode);
(8) remove insulation course, the lower surface sputter or the evaporated metal layer of the upper surface of upper cover plate silicon chip, center mass cube electrode lead-out groove and lower cover silicon chip.
Capacitance gap between described centroplasm gauge block and the upper and lower cover plate is between 1~10 μ m.That is capacitance gap is produced in the lower surface of upper cover plate and the upper surface of lower cover.
The electrode of described upper cover plate lower surface is drawn the gap between 1~10 μ m.
Described centroplasm gauge block is to form by top mass and bottom mass bonding, and top mass and bottom mass form by the method for anisotropic etch respectively, and the combined elastic beam forms by the method for etching.
Described center mass cube electrode lead-out groove forms by isotropy or anisotropic etch upper cover plate silicon chip.
Described micro-acceleration sensor adopts silocon-silicon linkage technology to make, and at first bottom mass silicon chip and top mass silicon chip are finished bonding, and then respectively with lower cover silicon chip and upper cover plate wafer bonding.
Generally speaking, the invention provides symmetrical combined elastic girder construction condenser type micro-acceleration sensor structure and method for making.The elastic beam of the capacitive acceleration sensor structure that general silicon body micro-machining is made and responsive mass center be not in same plane, can cause bigger cross sensitivity, be that acceleration signal on the non-sensitive direction also can cause bigger output, as Kampen R.P.V., Wolffenbuttel R.F., Modeling the mechanical behavior of bulk-micromachinedsilicon ccelerometers, Sensors and Actuators, A64,1998,137-150.In order to reduce transversal effect, two silicon chips are carried out Si-Si bonding behind the single face corrosion mass figure respectively again, two-sided etching forms the centroplasm gauge block of two-sided all flexible beams, as Henrion W.S., et.al, Sensors structure withL-shaped spring legs, US Patent No.5,652,384, because its elastic beam is a L type beam, the first rank mode is for detecting mode, second and third rank model frequency is about 3~4 times of the first rank model frequency, can not significantly reduce the intersecting axle sensitivity of device.And the combined elastic girder construction that invention provides adopts symmetrical straight beam, Vierendeel girder, L beam to be joined together to form, has high symmetry, the first rank mode is for detecting mode, second and third rank model frequency is about 7~8 times of the first rank model frequency, improved the ability of anti-lateral impact of device and torsional pulse, significantly reduce cross sensitivity, further improved the performance of device.The present invention has adopted center mass cube electrode lead-out groove structure, make upper cover plate contact conductor derby and center mass cube electrode lead-in wire derby by a step deposit, and has realized the electric signal isolation between two electrodes well.The present invention has adopted four layers of silicon chip to aim at Si-Si bonding and has made acceleration transducer, because entire device (centroplasm gauge block, outer support frame, the combined elastic girder construction and on, lower cover) adopts identical single crystal silicon material, greatly balance the combined elastic beam because the thermal stress that bonding produces, improved thermal stability, make the performance of acceleration transducer more stable, and can be as required, design different beam lengths, beam width, cantilever thickness and capacitance gap, the size of centroplasm gauge block also can be selected according to demand flexibly, change the range and the sensitivity of acceleration transducer, make the dirigibility of acceleration transducer bigger.
Description of drawings
Fig. 1 (a) is a kind of center sensor mass, combined elastic girder construction, the outer support frame structure vertical view that the present invention proposes, and total is symmetry up and down.Wherein, L beam one end that forms the combined elastic beam is connected with Vierendeel girder, and the other end can be connected the optional position of outer support frame medial surface, as Fig. 1 (a) institute link position, also can be as Fig. 1 (b) institute link position, but be not limited thereto the position.
Fig. 2 (a) is another kind of center sensor mass, combined elastic girder construction, the outer support frame structure vertical view that the present invention proposes, and total is symmetry up and down.Wherein, L beam one end that forms the combined elastic beam is connected with Vierendeel girder, and the other end can be connected the optional position of outer support frame medial surface, as Fig. 2 (a) institute link position, also can be as Fig. 2 (b) institute link position, but be not limited thereto the position.
Fig. 3 is the symmetrical combined elastic girder construction micro-acceleration sensor sectional view that the present invention proposes.
Fig. 4 is the sensor production technological process of embodiment.Wherein, 4 (a) are the making of upper cover plate, comprise that capacitance gap, limited block, electrode draw the making of gap and center mass cube electrode lead-out groove; 4 (b) are the making of lower cover, comprise the making of capacitance gap and limited block; 4 (c) are the making of top mass and apical support framework; 4 (d) are the making of bottom mass and bottom support frame; 4 (e) are the making of centroplasm gauge block and outer support frame; 4 (f) be upper and lower surperficial combined elastic beam release and with the bonding of upper and lower cover plate silicon chip; 4 (g) are the making of top electrode lead-in wire derby, center mass cube electrode lead-in wire derby and bottom electrode lead-in wire derby.
The implication of each digitized representation is among the figure: 1 combined elastic girder construction, and it is by straight elastic beam; Vierendeel girder; the L beam is connected in turn and forms on 2 centroplasm gauge blocks, 3 outer support frame, 4 top masses, 5 bottom masses, 6 apical support frameworks, 7 bottom support frames, 8 top combined elastic beams, the 9 bottom combined elastic beams 10 11 times capacitance gaps of capacitance gap, 12 top overload protection limited blocks, 13 bottom overload protection limited blocks, 14 upper cover plate silicon chip insulation courses, 15 lower cover silicon chip insulation courses, 16 upper cover plate silicon chips, 17 lower cover silicon chips, 18 upper cover plate contact conductor derbies, 19 lower cover contact conductor derbies, 20 center mass cube electrodes lead-in wire derby, 21 center mass cube electrodes and draw gap 22 electrode lead-out grooves, 23 top mass silicon chips, 24 bottom mass silicon chips.
Embodiment
Following examples are set forth the substantive distinguishing features and the marked improvement of the micro-acceleration sensor that the present invention relates to and preparation method thereof, but the present invention only limits to the embodiment that introduces by no means.
As Fig. 1 (a) with (b), an end of combined elastic girder construction 1 is connected in the middle of the side of centroplasm gauge block 2, and the other end is connected outer support frame 3.Also be central authorities or the optional position that L beam one end in the combined elastic beam is connected outer support frame 3, an end of straight elastic beam is connected the centre of Vierendeel girder, and the then straight elastic beam other end is positioned at the side central authorities of centroplasm gauge block 2; And for example Fig. 2 (a) and (b) shown in, an end of the straight elastic beam in the combined elastic girder construction 1 is connected with a top of Vierendeel girder, and the other end of straight elastic beam is connected the side drift angle of centroplasm gauge block 2, the other end is connected outer support frame 3.The micro-acceleration sensor section of structure as shown in Figure 3, micro-acceleration sensor comprises symmetrical combined elastic girder construction 1 that centroplasm gauge block 2, outer support frame 3, the centroplasm gauge block 2 of a symmetry are connected with outer support frame 3 and upper cover plate silicon chip 16, lower cover silicon chip 17.Centroplasm gauge block 2 is made up of top mass 4 and bottom mass 5, and combined elastic girder construction 1 is made up of top combined elastic beam 8 and bottom combined elastic beam 9, and outer support frame 3 is made up of apical support framework 6 and bottom support frame 7.Top and bottom overload protection limited block 12,13 are produced in the lower surface of upper cover plate silicon chip 16 and the upper surface of lower cover silicon chip 17.Last capacitance gap 10, following capacitance gap 11 are respectively at the lower surface of upper cover plate silicon chip 16, the upper surface of lower cover silicon chip 17.Upper cover plate contact conductor derby 18 is positioned at the upper surface of upper cover plate silicon chip 16, and lower cover contact conductor derby 19 is positioned at the lower surface of lower cover silicon chip 17.The center mass cube electrode on apical support framework 6 surfaces of center mass cube electrode lead-in wire derby 20 under electrode lead-out groove 22 is drawn in the gap 21, realizes electrical isolation by insulation course 14,15 respectively between apical support framework 6 and upper cover plate silicon chip 16 and bottom support frame 7 and the lower cover silicon chip 17.The sensitive direction of this acceleration transducer is a normal direction, do the time spent as outside normal acceleration, increase of capacitor C 1, C2 that the upper and lower surface electrode of centroplasm gauge block constitutes with upper cover plate electrode, lower cover electrode respectively, one reduce, changes in capacitance amount (C1-C2) and the proportional relation of external acceleration signal are by measuring the size that this variable quantity comes the sense acceleration value.
The micro-acceleration sensor method for making that embodiments of the invention relate to describes with reference to process chart shown in Figure 4, mainly comprises following processing step:
(1) shown in Fig. 4 (a), upper cover plate silicon chip 16 is two (100) silicon chips of throwing, and after the oxidation, its lower surface utilizes the caustic solution making to go up capacitance gap 10 and the center mass cube electrode is drawn gap 21, and the degree of depth is generally 1~10 μ m; Secondary oxidation, its lower surface utilize caustic solution to make top overload protection limited block 12.Upper and lower surface at upper cover plate silicon chip 16 makes insulation course 14, and insulation course 14 thickness are generally 1~3 μ m, and insulating material can be SiO
2, Si
3N
4Or SiC etc., but be not limited thereto, its upper surface makes electrode lead-out groove window by lithography;
(2) shown in Fig. 4 (b), lower cover silicon chip 17 is two (100) silicon chips of throwing, and after the oxidation, its upper surface utilizes caustic solution to make capacitance gap 11 down, and the degree of depth is generally 1~10 μ m; Secondary oxidation, its upper surface utilize caustic solution to make bottom overload protection limited block 13.Upper and lower surface at lower cover silicon chip 17 makes insulation course 15, and insulation course 15 thickness are generally 1~3 μ m, and insulating material can be SiO
2, Si
3N
4Or SiC etc., but be not limited thereto;
(3) shown in Fig. 4 (c), top mass silicon chip 23 is two (100) silicon chips of throwing, and after the oxidation, lower surface makes top mass 4 figures by lithography, and anisotropic etch forms top mass 4 and apical support framework 6 to the thickness of combined elastic beam;
(4) shown in Fig. 4 (d), bottom mass silicon chip 24 is two (100) silicon chips of throwing, and after the oxidation, upper surface makes bottom mass 5 figures by lithography, and anisotropic etch forms bottom mass 5 and bottom support frame 7 to the thickness of combined elastic beam;
(5) shown in Fig. 4 (e), the lower surface of top mass 4 is aimed at centroplasm gauge block 2 and the outer support frame 3 that Si-Si direct bonding forms symmetry with the upper surface of bottom mass 5, the Si-Si direct bonding temperature is 400~500 ℃, pressure is 1~2Kg;
(6) shown in Fig. 4 (f), discharge the combined elastic beam 8,9 on centroplasm gauge block 2 upper and lower surfaces by etching, aim at pre-bonding with the upper surface of lower cover silicon chip 17 then, aim at pre-bonding with the lower surface of upper cover plate silicon chip 16 again, carry out whole annealing process again after pre-bonding is finished, pre-bonding temperature is 400~500 ℃, and pressure is 2~3Kg, annealing temperature is 900~1100 ℃, aerating oxygen or nitrogen in the annealing process;
(7) shown in Fig. 4 (g), corrosion forms center mass cube electrode lead-out groove 22, remove insulation course, the upper surface of upper cover plate silicon chip 16, center mass cube electrode lead-out groove 22 are made (sputter is evaporated etc., but is not limited thereto) metal level (Al with the lower surface of lower cover silicon chip 17, Au, Ni etc., but be not limited thereto), top electrode lead-in wire derby 18, center mass cube electrode lead-in wire derby 20 and bottom electrode lead-in wire derby 19 formed.
Claims (10)
1. symmetrical combined elastic girder construction condenser type micro-acceleration sensor, it is characterized in that described micro-acceleration sensor comprises combined elastic girder construction and upper and lower cover plate that centroplasm gauge block, outer support frame, the centroplasm gauge block of a symmetry are connected with outer support frame
Wherein, (1) the centroplasm gauge block is made up of top mass and bottom mass, the combined elastic girder construction is made up of the top combined elastic beam and the bottom combined elastic beam of symmetry, and outer support frame is made up of the apical support framework and the bottom support frame of upper and lower symmetry;
(2) the centroplasm gauge block is as the movable electrode that detects electric capacity, and as the fixed electorde that detects electric capacity, upper and lower cover plate is positioned at the upper and lower faces of movable electrode to upper and lower cover plate respectively;
(3) the combined elastic girder construction is joined together to form by eight straight elastic beams of symmetry, two symmetrical frame beams, eight symmetrical L beams;
(4) end of combined elastic girder construction is connected the centre or the drift angle of top, centroplasm gauge block side and bottom, and the other end is connected the outer support frame medial surface;
(5) center mass cube electrode lead-in wire derby is positioned at the outer support frame upper surface, and upper cover plate contact conductor derby is positioned at the upper surface of upper cover plate, and lower cover contact conductor derby is positioned at the lower surface of lower cover.
2. symmetrical combined elastic girder construction condenser type micro-acceleration sensor according to claim 1, it is characterized in that the combined elastic girder construction is connected the centre or the drift angle of top, centroplasm gauge block side and bottom respectively by eight symmetrical straight beams, eight symmetrical L beams are connected the outer support frame medial surface, eight symmetrical straight beams and eight symmetrical L beams are joined together to form the combined elastic girder construction by two symmetrical frame beams, and the combined elastic beam of centroplasm gauge block upper and lower faces is symmetrically distributed.
3. according to claim 1 and 2 described symmetrical combined elastic girder construction condenser type micro-acceleration sensors, it is characterized in that eight straight elastic beam shape and size are consistent respectively, two symmetrical frame beam shape and size are consistent respectively, the shape and size of eight L beams are consistent respectively.
4. according to claim 1,2 and 3 described symmetrical combined elastic girder construction condenser type micro-acceleration sensors, it is characterized in that L beam one end that forms the combined elastic beam is connected with Vierendeel girder, the other end can be connected the optional position of outer support frame medial surface; Also be that described combined elastic beam is connected to form by straight elastic beam, Vierendeel girder and L beam successively.
5. symmetrical combined elastic girder construction condenser type micro-acceleration sensor according to claim 1 is characterized in that centroplasm gauge block upper surface or lower surface are rectangle or square.
6. symmetrical combined elastic girder construction condenser type micro-acceleration sensor according to claim 1, it is characterized in that externally support frame upper surface of center mass cube electrode lead-in wire derby, the electrode that is the upper cover plate lower surface is drawn in the gap, realizes electrical isolation by insulation course between centroplasm gauge block and the upper and lower cover plate.
7. make the method for symmetrical combined elastic girder construction condenser type micro-acceleration sensor as claimed in claim 1, comprise the formation that capacitance gap is made, limited block is made, electrode is drawn gap making, centroplasm gauge block and symmetrical combined elastic girder construction, the making of the bonding of upper and lower cover plate silicon chip and centroplasm gauge block silicon chip and center mass cube electrode lead-out groove is characterized in that comprising the steps:
(1) upper surface of the lower surface of upper cover plate silicon chip and lower cover silicon chip corrosion formation capacitance gap and upper cover plate silicon chip lower surface center mass cube electrode are drawn the gap;
(2) the upper surface capacitance gap surface corrosion of the lower surface of upper cover plate silicon chip and lower cover silicon chip forms the overload protection limited block;
(3) the upper surface photoetching top mass of the lower surface of top mass silicon chip and bottom mass silicon chip and bottom mass figure, anisotropic etch obtains top mass and bottom mass, and corrosion depth is by the thickness decision of the thickness and the combined elastic beam of silicon chip;
(4) top mass silicon chip and bottom mass silicon chip are aimed at the center mass block structure that Si-Si direct bonding forms symmetry;
(5) upper and lower cover plate silicon chip surface is made insulating material, as the insulation course between centroplasm gauge block silicon chip and the upper and lower cover plate silicon chip;
(6) by the combined elastic beam on the upper and lower surface of etching release centroplasm gauge block, aim at pre-bonding with lower cover silicon chip upper surface then, aim at pre-bonding with upper cover plate silicon chip lower surface again, carry out whole annealing process again after pre-bonding is finished;
(7) isotropy or anisotropic etch upper cover plate silicon chip form center mass cube electrode lead-out groove, and to draw interstitial site corresponding up and down with target;
(8) remove insulation course, the lower surface sputter or the evaporated metal layer of the upper surface of upper cover plate silicon chip, center mass cube electrode lead-out groove and lower cover silicon chip.
8. method for making according to claim 7 is characterized in that:
1. the capacitance gap between centroplasm gauge block and the upper and lower cover plate is between 1~10 μ m;
2. the electrode of upper cover plate lower surface is drawn the gap between 1~10 μ m.
9. method for making according to claim 7 is characterized in that described upper cover plate silicon chip, lower cover silicon chip, top mass and bottom mass silicon chip are two (100) silicon chips of throwing.
10. method for making according to claim 7 is characterized in that:
1. the insulation course on the upper and lower cover plate is SiO
2, Si
3N
4Or SiC, thickness is 1-3 μ m;
2. top mass silicon chip and bottom mass wafer bonding temperature are 400-500 ℃, and pressure is 1-2kg;
3. the temperature that upper and lower cover plate is aimed at pre-bonding is 400-500 ℃, and pressure is 2-3kg, and the annealing process of pre-bonding is that annealing temperature is 900-1100 ℃, and annealing atmosphere is oxygen or nitrogen;
4. described metal level is Al, Au or Ni.
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