CN107167630A - A kind of design of MEMS acceleration transducers based on flexible material and preparation method thereof - Google Patents
A kind of design of MEMS acceleration transducers based on flexible material and preparation method thereof Download PDFInfo
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- CN107167630A CN107167630A CN201710435498.8A CN201710435498A CN107167630A CN 107167630 A CN107167630 A CN 107167630A CN 201710435498 A CN201710435498 A CN 201710435498A CN 107167630 A CN107167630 A CN 107167630A
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- mems acceleration
- acceleration transducers
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- polyimide film
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0897—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by thermal pick-up
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Abstract
The present invention relates to a kind of design of MEMS acceleration transducers based on flexible material and preparation method thereof.MEMS acceleration transducers involved in the present invention use flexible material as substrate, not on silicon chip, perforate forms cavity structure, but be bonded glue glass cover-plate and wafer bonding to form closed cavity by BCB, it can thus use Surface-Micromachining to make, simplify technique.The flexible material polyimide film made on described first substrate can for come prevent heat scatter and disappear, ensure that hot gas group preferably plays a role and reduced power consumption, other polyimide film is also possible to prevent platinum electrode electric leakage, this sensor construction for designing and producing out is more stable, reliability is high, and performance is also more preferable.More importantly, MEMS acceleration transducers based on flexible material have broken the limitation that traditional sensors are produced on rigid basement, development to novel flexible sensor has played impetus, and this sensor can widen the application prospect of MEMS acceleration transducers as flexible device.
Description
Technical field
The invention belongs to micro-electronic mechanical skill field, it is related to a kind of micro-inertia sensor, and in particular to one kind is based on soft
Design of MEMS acceleration transducers of property material and preparation method thereof.
Background technology
The application field of micromachined process is more and more wider in recent years, and market is also increasing, many intelligentized
Detection device employs various sensors in large quantities, such as in biomedical detection, intelligent robot, wearable
The field such as equipment, Flexible Displays sensor is just widely used, and these fields generally require sensor has bendable
Bent, stretchable feature, disclosure satisfy that the demand being attached on various irregular surfaces.With the hair of flexible base material
Exhibition, meets above-mentioned all kinds of trend, the flexible sensor of feature and arises at the historic moment on this basis.
Traditional MEMS acceleration transducers are typically all produced on silicon chip, are applied in the equipment such as mobile phone, bracelet, are passed through
External circuit detects acceleration signal, using being restricted.The new MEMS acceleration transducers based on flexible material
It can be integrated by IC techniques with detection circuit, be produced on flexible material, directly can wear or be attached to skin
Worked independently on skin, thus broken the limitation of application apparatus, give people to provide more facilities.
The content of the invention
, should it is an object of the invention to provide a kind of MEMS acceleration transducers based on flexible material and preparation method thereof
The operation principle of MEMS acceleration transducers is thermal convection principle, is produced on flexible material polyimide substrate, temperature in use
The preferable material of sensitiveness --- platinum to make the core of sensor --- temperature-sensitive resistor；It is preferable with electric conductivity
Material --- gold transmits the interconnection line of signal to make；Finally glass cover-plate and substrate are bonded using BCB bonding glue,
To form a closed cavity, it is to avoid outside air has a negative impact to sensor.MEMS heat involved in the present invention is right
Flow acceleration sensor is processed making using Surface-Micromachining, and used flexible material polyimides is comprehensive
One of best high-molecular organic material of performance, not only high mechanical strength but also partiting thermal insulation, and stable chemical performance are to make
The ideal material of flexible sensor.
The MEMS thermal convection acceleration sensors that the present invention is provided include flexible material polyimide film, are produced on polyamides Asia
RTD on amine film, be produced on polyimide film and be connected to access the golden interconnection line for picking out signal with RTD,
It is produced on the outermost layer silicon nitride protective layer for having carried out structure one side, the glass cover-plate being bonded together with substrate.
Described Kapton is made on first substrate silicon chip, 2~200 microns of thickness.
Described RTD is serpentine arrangement, altogether three part, an including adding thermal resistance and two sensing resistors.
20~6000 microns of adding thermal resistance length, 1~100 micron of width, 0.1~10 micron of thickness；Sensing resistor length 20~6000
Micron, 1~100 micron of width, 0.1~10 micron of thickness, and two sensing resistor length, width, thickness and shape all same,
The symmetrically placed both sides in adding thermal resistance.Described golden 100~2000 microns of interconnection line main part width, thickness 1~10 is micro-
Rice.
0.3~3 micron of described silicon nitride protective layer thickness, it is 100~2000 to have the length of side at the end points of golden interconnection line
The square perforate of micron, as bonding region, connects lead during encapsulating.
Described glass cover-plate is bonded glue by BCB and is bonded together with flexible substrates, forms closed cavity.
Make comprising the concrete steps that for the MEMS acceleration transducers：
Step 1, on the burnishing surface of first substrate silicon chip form Kapton；
Step 2, RTD is formed on polyimide film；
Step 3, the golden interconnection line of formation on polyimide film；
Step 4, carrying out a face full wafer formation silicon nitride film of structure；Step 5, etch nitride silicon thin film, in the gold
Interconnect and bonding region is formed at line endpoints；
Step 6, using BCB bonding techniques glass cover-plate formed closed cavity together with wafer bonding；
Remove first substrate after step 7, scribing, sensor production is completed.
In summary, it can be realized by flexible material polyimide film according to the inventive method, be produced on polyimide film
On RTD, be produced on polyimide film the golden interconnection line being connected with RTD, be produced on whole chip most
Outer layer silicon nitride film, with flexible substrates by BCB be bonded that the glass cover-plate that glue is bonded together constitutes based on flexible material
MEMS acceleration transducers.Adding thermal resistance and sensing resistor material are platinum, and are all produced on flexible substrates polyimide film
On, adding thermal resistance and sensing resistor composition central role part, two sensing resistors are identical, are symmetrically disposed at adding thermal resistance
Both sides.
MEMS thermal convection acceleration sensors involved in the present invention have made one layer of flexibility on described first substrate
Material substrate --- polyimide film prevents heat to scatter and disappear, it is ensured that hot gas group preferably plays a role and reduced power consumption, and gather
Acid imide film is also possible to prevent RTD electric leakage, and more answer is realized as flexible device while also making this acceleration transducer
With.Perforate forms cavity structure to MEMS thermal convection acceleration sensors involved in the present invention not on silicon chip, but passes through
BCB is bonded glue glass cover-plate and wafer bonding to form closed cavity, and this design makes technical process become simple and system
Make sensor construction out more stable, reliability is high, performance is also more preferable, it is often more important that, traditional biography has been broken in this design
Sensor is produced on the limitation in rigid basement, and the development to novel flexible sensor has played impetus.
Brief description of the drawings
Fig. 1 is overall structure diagram of the invention；
Fig. 2（a）-2（h）For the fabrication processing schematic diagram of the present invention；
Wherein each description of reference numerals is as follows：
1 represents silicon chip；
2 represent polyimides；
3 represent platinum adding thermal resistance；
4 represent platinum sensing resistor；
5 represent golden interconnection line；
6 represent silicon nitride；
7 represent the bonding region of etch silicon nitride formation；
8 represent BCB bonding glue；
9 represent glass cover-plate.
Embodiment
The present invention will be further described with accompanying drawing with reference to embodiments, but the present invention is by no means limited to introduced reality
Apply example.
Embodiments of the invention are related to a kind of MEMS acceleration transducers based on flexible material, as shown in figure 1, first
One layer of polyimide film is made on substrate；RTD, two complete phases of Sensor core part are made on polyimide film
Same sensing resistor is symmetrically disposed at adding thermal resistance both sides；Interconnection line is connected at the end points of each resistance；Use BCB bonding techniques
Glass cover-plate and flexible substrates are bonded together；Depositing one layer of silicon nitride protective layer in outermost layer prevents extraneous dust or particle
Thing is polluted to device.
The preparation method for the MEMS acceleration transducers based on flexible material that the present embodiment is related to, with reference to Fig. 2（a）-2
（h）Process chart illustrate, mainly comprise the following steps that：
A, from single low resistance silicon chip thrown as first substrate 1, in the burnishing surface formation polyimide film 2 of silicon chip, and imidization.
B, with reference to mask plate（Mask 1）, with photoresist as mask, sputtered after exposure, development using magnetron sputter
One layer 20~500 nanometers of chromium is first sputtered before platinum, sputtering platinum（Or titanium）To increase the adhesiveness of platinum and substrate, then with stripping
Technique is by unwanted chromium platinum（Or titanium platinum）Remove, form RTD 3 and 4.
C, the chromium that one layer 20~500 nanometers are sputtered with magnetron sputter in the above-mentioned face full wafer for having done structure（Or
Titanium）, then on chromium one layer 20~500 nanometers of gold is sputtered, then in conjunction with mask plate（Mask 2）, with photoresist as mask,
It is put into electroplate liquid and is powered after exposure, development, carry out the plating of gold, reaches after the thickness needed, remove photoresist, then carved with IBE
Erosion machine full wafer etches away the metal level of one layer of 40~1000 nano thickness, forms golden interconnection line 5.
D, with PECVD in the above-mentioned face full wafer deposited silicon nitride for having done structure, form protective layer 6.
E, with reference to mask plate（Mask 3）, with photoresist as mask, carried out after exposure, development using RIE ion etchings
The etching of silicon nitride, lead district 7 is formed after removing photoresist at gold interconnection line endpoints.
F, the BCB bonding glue in the above-mentioned face full wafer coating light sensitivity for having done structure, then in conjunction with mask plate（Mask
4）Exposure, development, the BCB bonding glue 8 for having been formed graphical.
G, glass cover-plate 9 are bonded glue 8 by BCB with device and are bonded together, and carry out the solidification of BCB glue.
Remove first substrate silicon chip after the completion of h, scribing, device is completed.
MEMS acceleration transducers of the present invention based on flexible material are produced by process above step.With reference to figure
1 overall structure diagram is illustrated to the principle of the present invention.
Adding thermal resistance is heated by the control of external circuit to the air in closed cavity, the effect of sensing resistor
It is the change in the temperature field for detecting adding thermal resistance both sides, in the case of no acceleration, temperature field is constant, chamber air is carried out
Heat transfer free convection, it is identical to be symmetrically disposed at the temperature field that the sensing resistor on adding thermal resistance both sides perceives, corresponding electricity
Resistance is also equal, then by connecting external circuit, the magnitude of voltage of both sides output is identical, and the difference amplifier of outer detecting circuit is defeated
Go out for 0；When applying the acceleration of a certain sensitive direction as shown in Figure 1 to sensor, the poised state in temperature field is beaten
Broken, the resistance value size that the change in temperature field will make to be positioned over the sensing resistor on adding thermal resistance both sides changes, and so passes through
External detection circuit can measure a differential signal, and then measure acceleration.Because the temperature sensitivity of material is very strong, this
The height of the MEMS thermal convection acceleration sensors precision based on flexible material being related to is invented, performance is good.It is simultaneously of the present invention
Rational in infrastructure designed by MEMS acceleration transducers based on flexible material, selected materials performance is good, therefore the biography produced
Sensor good reliability, intensity is high, and manufacture craft is simple, and high yield rate can meet production in enormous quantities.
Claims (7)
1. the MEMS acceleration transducers based on flexible material, it is characterised in that：
Including flexible material polyimide film；
It is produced on the RTD on polyimide film；
It is produced on polyimide film and is connected to access the golden interconnection line for picking out signal with RTD；
It is produced on the outermost silicon nitride protective layer of one side for having carried out structure；
The glass cover-plate being bonded together with flexible substrates；
Described RTD has three parts altogether, including：
One adding thermal resistance；
Two identical sensing resistors, the symmetrically placed both sides in adding thermal resistance；
All RTDs are serpentine arrangement.
2. MEMS acceleration transducers according to claim 1, it is characterised in that：Described Kapton thickness is
2~200 microns.
3. MEMS acceleration transducers according to claim 1, it is characterised in that：The adding thermal resistance, length 20~
6000 microns, 1~100 micron of width, 0.1~10 micron of thickness；Two sensing resistor length and widths, thickness all sames, are length
20~6000 microns, 1~100 micron of width, 0.1~10 micron of thickness.
4. MEMS acceleration transducers according to claim 1, it is characterised in that：Described golden interconnection line main part is wide
100~2000 microns of degree, 1~10 micron of thickness.
5. MEMS acceleration transducers according to claim 1, it is characterised in that：Described silicon nitride protective layer thickness
0.3~3 micron, there is the square perforate that the length of side is 100~2000 microns at the end points of golden interconnection line, as bonding region, use
Lead is connect during encapsulating.
6. MEMS acceleration transducers according to claim 1, it is characterised in that：Described glass cover-plate passes through BCB keys
Rubber alloy is bonded together with flexible substrates, forms closed cavity.
7. the MEMS acceleration transducer preparation methods described in a kind of claim 1, it is characterised in that：
Step 1, on the burnishing surface of first substrate silicon chip form Kapton；
Step 2, RTD is formed on polyimide film；
Step 3, the golden interconnection line of formation on polyimide film；
Step 4, carrying out a face outermost layer full wafer formation silicon nitride film of structure；
Step 5, etch nitride silicon thin film, bonding region is formed at the gold interconnection line endpoints；
Step 6, using BCB bonding techniques glass cover-plate formed closed cavity together with wafer bonding；
Remove first substrate after step 7, scribing.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111983255A (en) * | 2020-08-31 | 2020-11-24 | 东南大学 | Flexible acceleration sensor based on heat convection principle |
| CN112162112A (en) * | 2020-09-25 | 2021-01-01 | 西北工业大学 | Flexible thermal convection acceleration sensor |
| CN112729629A (en) * | 2020-12-28 | 2021-04-30 | 深圳安培龙科技股份有限公司 | MEMS silicon strain gauge and processing method thereof |
| CN113325198A (en) * | 2021-06-09 | 2021-08-31 | 东南大学 | Flexible heat convection type acceleration sensor and preparation method thereof |
| CN113697759A (en) * | 2021-07-09 | 2021-11-26 | 中国电子科技集团公司第十三研究所 | MEMS inertial sensor based on flexible substrate and preparation method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111983255A (en) * | 2020-08-31 | 2020-11-24 | 东南大学 | Flexible acceleration sensor based on heat convection principle |
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| CN112729629A (en) * | 2020-12-28 | 2021-04-30 | 深圳安培龙科技股份有限公司 | MEMS silicon strain gauge and processing method thereof |
| CN113325198A (en) * | 2021-06-09 | 2021-08-31 | 东南大学 | Flexible heat convection type acceleration sensor and preparation method thereof |
| CN113325198B (en) * | 2021-06-09 | 2022-04-29 | 东南大学 | Flexible heat convection type acceleration sensor and preparation method thereof |
| CN113697759A (en) * | 2021-07-09 | 2021-11-26 | 中国电子科技集团公司第十三研究所 | MEMS inertial sensor based on flexible substrate and preparation method |
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Application publication date: 20170915 |