CN102476786B - Single silicon chip integrated chip combining acceleration sensor and pressure sensor and manufacturing method of single silicon chip integrated chip - Google Patents

Abstract

The invention relates to an acceleration and pressure sensor single silicon chip integrated chip and a manufacturing method. The chip includes a single crystal silicon substrate and an acceleration sensor and a pressure sensor integrated on the single crystal silicon substrate; the pressure and acceleration sensors are integrated on the same surface of the single crystal silicon substrate by using a single-sided micromachining method On the surface, a single crystal silicon film with uniform thickness and controllable thickness and an embedded cavity are formed by lateral etching technology at the root of the side wall, and the piezoresistivity is reasonably distributed on the surface of the single crystal silicon film to make a pressure sensor; the acceleration sensor adopts double cantilever beams and mass Block structure, through the subsequent selective electroplating and etching of the single crystal silicon film, process and release the mass block and cantilever beam, and use the copper plating method to increase the quality of the mass block and improve the sensitivity. The invention has a simple structure, uses non-bonded single-silicon chip micromechanical technology to realize the single-sided structure fabrication of integrated chips, and meets the requirements of small size, low cost and mass production of sensor chips in TPMS applications.

Description

Acceleration and pressure sensor single silicon chip integrated chip and manufacturing method

technical field

The invention relates to a chip integrating an acceleration sensor and a pressure sensor and a manufacturing method thereof, in particular to an integrated chip of an acceleration sensor and a pressure sensor processed by a single-sided micromachining of a single silicon chip and a manufacturing method thereof, which can be used in TPMS (tire pressure detection system) ), belonging to the technical field of silicon micromechanical sensors.

Background technique

In the fields of aerospace, industrial automation control, automotive electronics, navigation, and consumer electronics, parameters such as acceleration and pressure need to be measured simultaneously. For example, in the automobile TPMS (tire pressure monitoring system), the pressure sensor installed in each tire is used to detect the tire pressure in real time, and the information of each tire pressure is fed back to the control panel for real-time display and monitoring to ensure the safe operation of the car. When the tire pressure is too low or there is leakage, the system will automatically alarm. An acceleration sensor module is installed in the tire at the same time. The acceleration sensor is used to detect whether the car is running. Using its sensitivity to motion, the car can be turned on immediately when it moves, enters the system self-inspection, and automatically wakes up. When the car is running at high speed, the detection time period is automatically and intelligently determined according to the speed of motion, and the safety period, sensitive period and dangerous period during the car driving process are monitored and early warning judgments are made through the auxiliary software, so as to gradually shorten the roving detection cycle and improve early warning ability, thereby greatly reducing system power consumption.

At present, there are mainly two types of TPMS integrated chip structures based on piezoresistive detection: (1) The integrated chip is fabricated by using the double-sided micromachining method of silicon wafer combined with bonding technology, that is, two-step anisotropic wet etching method is used to form the integrated chip respectively. Pressure membrane and mass. The reference pressure cavity of the pressure sensor and the structural support frame of the acceleration sensor are manufactured by silicon-silicon bonding or silicon-glass bonding, and finally the movable structure is released by dry etching on the front side of the silicon wafer. [Xu J B, Zhao Y L, Jiang Z D et al. A monolithic silicon multi-sensor for measuring three-axis acceleration, pressure and temperature Journal of Mechanical Science and Technology, 2008, 22: 731-739]. (2) The sensitive film of the pressure sensor is composed of LPCVD (low-pressure chemical vapor deposition) deposited film materials, such as low-stress silicon nitride, polysilicon, etc., and a polysilicon piezoresistor is made on the film to form a detection circuit; the acceleration sensor is realized by the principle of heat convection Detection [Wang Q, Li X X, Li T, Bao M M, et al. A novel monolithically integrated pressure, accelerator and temperature composite sensor Transducers2009, Denver, CO, USA. 2009: 1118-1121]. The above-mentioned first structural method is mainly manufactured by silicon micromechanical technology, using two-step KOH etching on the back to thin the silicon wafer and high-temperature bonding to manufacture the cavity of the pressure sensor, the cantilever beam of the acceleration sensor and the mass block. This manufacturing method not only The size of the chip after processing is too large, which increases the production cost, and the thickness of the pressure film after processing is not uniform, which affects the output characteristics of the sensor. At the same time, the residual stress caused by the thermal mismatch between different materials during the bonding process will also have a greater impact on the temperature drift of the sensor [Kovacs GTA, Maluf NI, Petersen KE.Bulk micromachining of silicon, P IEEE, 1998, 86 (8): 1536-1551]. The second structural method uses surface micromachining technology instead of bulk micromachining technology, and solves the problem of bulk silicon micromachining thin films by using low-stress silicon nitride or other deposited films with large Young's modulus as the sensitive structural layer of the pressure sensor. The problem of uneven thickness. And the overall size after processing is small, which can effectively reduce the processing cost. However, since the detection resistor is processed by polysilicon doping, and the piezoresistive coefficient of polysilicon resistor is much smaller than that of single crystal silicon, the piezoresistive coefficient is about half of that of single crystal silicon, so the sensitivity is low and unsuitable. It is used in high-sensitivity detection occasions. In addition, because the sensor with this structure needs to release the structure by wet etching the sacrificial layer, it is easy to cause thin film adhesion failure, and due to the limitation of thin film deposition, it is not easy to manufacture a large range of pressure sensors.

In view of this, the present invention proposes a new integrated chip structure of acceleration and pressure sensors based on a single silicon chip and a manufacturing method thereof.

Contents of the invention

The technical problem mainly solved by the present invention is to provide an acceleration and pressure sensor single-silicon chip integrated chip and its manufacturing method, which can realize the integrated manufacturing of multi-sensor chips, and further realize the miniaturization of the chip, and meet the requirements of low-cost chips and mass production .

In order to solve the above technical problems, the present invention adopts the following technical solutions:

A single-silicon integrated chip for acceleration and pressure sensors, comprising: a single-crystal silicon substrate and an acceleration sensor and a pressure sensor both integrated on the single-crystal silicon substrate;

The acceleration sensor and the pressure sensor are integrated on the same surface of the single crystal silicon substrate; wherein,

The acceleration sensor includes: a mass block, an elastic cantilever beam connected to the mass mass block, a first stress sensitive resistor located on the elastic cantilever beam, a reference resistor located on the surface of the single crystal silicon substrate, located on the The movement cavity embedded in the single crystal silicon substrate around the mass block and the elastic cantilever beam, and the cover silicon chip with a concave cavity; the cover plate silicon chip covers the mass block and the elastic cantilever beam, so that the The moving cavity cooperates with the concave cavity to form a closed cavity; the mass block is composed of a first monocrystalline silicon film and a metal block located on the first monocrystalline silicon film; the first stress-sensitive resistor and the The reference resistor is connected to form an acceleration detection circuit;

The pressure sensor includes: a second single crystal silicon film, a plurality of second stress-sensitive resistors located on the second single crystal silicon film, and a single crystal embedded under the second single crystal silicon film A sealed pressure cavity in the silicon substrate; the plurality of second stress-sensitive resistors are connected to form a pressure detection circuit.

As a preferred solution of the present invention, both the first stress-sensitive resistor and the second stress-sensitive resistor are single crystal silicon stress-sensitive resistors.

As a preferred solution of the present invention, the single crystal silicon substrate is a single crystal silicon substrate with a (111) crystal plane.

As a preferred solution of the present invention, both the first single crystal silicon thin film and the second single crystal silicon thin film are hexagonal, and the included angles between two adjacent sides are both 120°.

As a preferred solution of the present invention, the acceleration sensor is provided with two elastic cantilever beams and two first stress-sensitive resistors respectively located on the two elastic cantilever beams, and is provided with two reference resistors; The two reference resistors are connected with the two first stress-sensitive resistors to form a half-bridge detection circuit.

As a preferred solution of the present invention, the metal block in the acceleration sensor is a copper block with a thickness of 20 μm-30 μm.

As a preferred solution of the present invention, the pressure sensor is provided with four second stress-sensitive resistors, which are opposite to each other in a center-symmetrical distribution with the center of the second single crystal silicon thin film, and are respectively located in the second single crystal silicon film. On two mutually perpendicular symmetry axes of the crystalline silicon film, the four second stress-sensitive resistors are connected to form a Wheatstone full-bridge detection circuit.

In addition, the present invention also provides a method for manufacturing the above-mentioned acceleration and pressure sensor single-silicon chip integrated chip, including the following steps:

Step 1, adopting the method of ion implantation to fabricate stress-sensitive resistors on the single crystal silicon substrate, and then fabricate a surface passivation protection layer;

Step 2. Using reactive ion etching technology to make multiple release windows at intervals on the single crystal silicon substrate, the multiple release windows are divided into two groups to outline the desired first single crystal silicon film and the second single crystal silicon film respectively. profile, the depths of the two sets of release windows are respectively consistent with the thicknesses of the required first single-crystal silicon film and the second single-crystal silicon film; then deposit a passivation material in the release window to make a sidewall passivation protection layer;

Step 3. Use the reactive ion etching process to strip the passivation material at the bottom of the release window, and then use the silicon deep reactive ion etching process to continue etching downward. The two sets of release windows are respectively etched to the required motion cavity and sealing pressure cavity depth;

Step 4: Etching the monocrystalline silicon substrate laterally through the release window using a wet etching process, so as to create a movement cavity and a pressure chamber embedded in the monocrystalline silicon substrate, and release the first monocrystalline silicon film and the second monocrystalline silicon film. crystalline silicon thin film; and stitching the release window by depositing polysilicon in the release window to complete the sealing of the pressure cavity in the pressure sensor;

Step 5, removing part of the surface passivation protection layer, making ohmic contact areas and lead holes, and forming leads and pads;

Step 6, making a metal block on the first single crystal silicon film, and then using an etching process to release the mass block composed of the first single crystal silicon film and the metal block, and release the elastic cantilever beam;

Step 7. Make a cover silicon wafer with a concave cavity, and use BCB (Benzocyclobuene) glue to paste the cover silicon wafer on the monocrystalline silicon substrate, so that the cover silicon wafer covers the mass block and the elastic cantilever beam, and its concave cavity The airtight cavity is formed by the cavity and the motion cavity, and the manufacture of the entire integrated chip is completed.

As a preferred solution of the present invention, the single crystal silicon substrate adopts an n-type (111) crystal plane single crystal silicon substrate.

As a preferred solution of the present invention, in step 1, the stress-sensitive resistor is fabricated by implanting boron ions into the n-type (111) single crystal silicon substrate, the implantation inclination angle is 7°-10°, and the square of the stress-sensitive resistor The resistance value is 82-90 ohms.

As a preferred solution of the present invention, the first step utilizes a low-pressure chemical vapor deposition process (LPCVD) to sequentially deposit low-stress silicon nitride and silicon oxide to form a surface passivation protection layer.

As a preferred solution of the present invention, in step 2, a plurality of grid-shaped release windows are made equidistantly along the <111> crystal direction of the single crystal silicon substrate of the n-type (111) crystal plane, and the plurality of release windows are The windows are divided into two groups to outline the outlines of the first single-crystal silicon film and the second single-crystal silicon film respectively, so that the outlines of the first single-crystal silicon film and the second single-crystal silicon film are both hexagonal and adjacent to each other. The included angles are all 120°.

As a preferred solution of the present invention, in step 2, low-stress silicon nitride and silicon oxide are sequentially deposited by a low-pressure chemical vapor deposition process, or low-stress silicon nitride is directly deposited by a low-pressure chemical vapor deposition process, thereby producing sidewall passivation protection. layer.

As a preferred solution of the present invention, in step 4, KOH solution or TMAH solution is used to laterally etch the single crystal silicon substrate from the inside of the single crystal silicon substrate.

As a preferred solution of the present invention, in step 4, the low-stress polysilicon seam release window is deposited by a low-pressure chemical vapor deposition process.

As a preferred solution of the present invention, the metal block in step 6 is a copper block, and the copper electroplating is completed by sputtering the copper electroplating seed layer, so that the copper block is fabricated on the first single crystal silicon film.

Compared with the prior art, the beneficial effect of the present invention lies in that the present invention integrates the pressure sensor and the acceleration sensor on the same surface of the same single crystal silicon chip by using the same set of non-bonded single-silicon wafer micro-mechanical process through single-sided processing In fact, the structure is simple and the concept is ingenious, and it can be applied to the TPMS system to complete the detection of various parameters of acceleration and pressure. The invention not only solves the problem of residual stress and uneven film thickness of the pressure sensor caused by the excessive size of the integrated chip of the piezoresistive pressure and acceleration sensor in the micromachining of bulk silicon and thermal mismatch between different bonding materials, but also has the advantages of The unique advantages of surface micromachining, the processed chip is easy to package, has the characteristics of small size, low cost, high sensitivity, good stability, and good precision, and is suitable for mass production.

Description of drawings

Fig. 1 is a three-dimensional schematic diagram of the single silicon integrated chip of the acceleration and pressure sensor in the embodiment.

Fig. 2 is a schematic cross-sectional view of the three-dimensional structure of the single silicon integrated chip of the acceleration and pressure sensor in the embodiment.

Fig. 3 is the manufacturing process flowchart of the acceleration and pressure sensor single silicon chip integrated chip in the embodiment, wherein (a) make the stress-sensitive resistor; (b) etch the release window; (c) protect the structure side wall and process the sacrificial gap ; (d) lateral wet etching at the root of the sidewall; (e) stitching the release window; (f) processing the leads; (g) electroplating the copper block of the acceleration sensor; (h) BCB bonding package.

Fig. 4 is a SEM physical picture of the acceleration sensor in the embodiment.

Fig. 5 is a SEM real picture of the pressure sensor in the embodiment.

Fig. 6 is the test curve of the acceleration sensor in the embodiment.

Fig. 7 is the test curve of the pressure sensor in the embodiment.

The reference signs in the figure are explained as follows:

1——acceleration sensor;

2——pressure sensor;

3 - leads and pads;

4——Regular hexagonal pressure membrane;

5 - the stress sensitive resistor of the pressure sensor;

61 - the stress-sensitive resistor of the acceleration sensor;

62——The reference resistance of the acceleration sensor;

6——The elastic cantilever beam of the acceleration sensor;

7——The mass block of the acceleration sensor, that is, the silicon island (made of copper electroplating);

8——movable gap;

9——Seal the pressure chamber;

10——The normal motion clearance of the acceleration sensor.

Detailed ways

The present invention will be described in further detail below in conjunction with the accompanying drawings.

This embodiment makes a kind of acceleration and pressure sensor monolithic integrated chip, as shown in Figure 1 and Figure 2, this chip comprises: a monocrystalline silicon substrate and the acceleration sensor 1 that is all integrated on the described monocrystalline silicon substrate and a pressure sensor 2; the acceleration sensor 1 and the pressure sensor 2 are integrated on the same surface of the single crystal silicon substrate.

Wherein, the acceleration sensor 1 includes: a mass block 7, an elastic cantilever beam 6 connected to the mass block 7, a first stress-sensitive resistor 61 located on the elastic cantilever beam 6, located on the single crystal silicon substrate The reference resistor 62 on the surface is located in the motion cavity embedded in the single crystal silicon substrate around the mass block 7 and the elastic cantilever beam 6 (the movable gap 8 and the normal motion gap 10 in Fig. 1-2 are composed of motion cavity), and a cover silicon wafer (not shown in the figure) with a concave cavity; cavity; the quality block 7 is composed of a first monocrystalline silicon film and a metal block located on the first monocrystalline silicon film, and the metal block is preferably a copper block; the first stress-sensitive resistor 61 and the The reference resistor 62 is connected as an acceleration detection circuit. Among them, the first single crystal silicon thin film is mainly used to support the subsequent electroplating of the copper block. The thickness of the copper block is 20 μm to 30 μm, which is mainly used to increase the quality of the mass block and improve the output characteristics of the acceleration sensor.

The pressure sensor includes: a second single-crystal silicon film (i.e. the regular hexagonal pressure film 4 in FIGS. 1-2 ), a plurality of second stress-sensitive resistors 5 positioned on the second single-crystal silicon film, and A sealed pressure cavity 9 embedded in the single crystal silicon substrate under the second single crystal silicon film; the plurality of second stress sensitive resistors 5 are connected to form a pressure detection circuit.

In this embodiment, preferably, an n-type (111) crystal plane silicon wafer is used as a single crystal silicon substrate for single-sided micromechanical fabrication of a single silicon wafer, and a single crystal is formed by lateral wet etching at the root of the side wall of the single crystal silicon. Silicon thin films and embedded cavity structures. Both the first stress-sensitive resistor and the second stress-sensitive resistor are single-crystal silicon stress-sensitive resistors, which have higher sensitivity than polysilicon varistors; the first single-crystal silicon film and the second single-crystal silicon film are both six The angle between two adjacent sides is 120°.

The acceleration sensor preferably adopts a double cantilever beam and mass structure, that is, two elastic cantilever beams 6 and two first stress-sensitive resistors 61 respectively located on the two elastic cantilever beams 6 are provided, and two cantilever beams are provided. Two reference resistors 62 respectively located outside the two elastic cantilever beams, the two elastic cantilever beams are parallel to each other, and arranged axisymmetrically with the axis of symmetry of the first monocrystalline silicon film, the two reference resistors 62 and the two The first stress-sensitive resistor 61 is connected to form a half-bridge detection circuit. Wherein, the resistance values of the first stress-sensitive resistor 61 and the reference resistor 62 are equal in magnitude, both in the range of 3.5kΩ-6.5kΩ. During manufacture, the thickness of the first single crystal silicon film and the second single crystal silicon film are consistent, and the quality of the quality block is increased and the detection sensitivity of the sensor is improved by selectively electroplating copper blocks on the surface of the first single crystal silicon film. When the acceleration sensor is subjected to external acceleration, the two detection cantilever beams produce elastic deformation under the action of external force, correspondingly, the first stress-sensitive resistor located at the root of the upper surface of the cantilever beam is pulled (or compressed), according to the piezoresistive effect , the resistance value of the first stress-sensitive resistor increases (or decreases) correspondingly, and the detection of external acceleration is realized by forming a half-bridge detection circuit with two reference resistors.

According to the stress distribution in the thin film area, the pressure sensor makes full use of the longitudinal piezoresistive effect of the resistance strip to design the piezoresistive arrangement. Preferably, four second stress-sensitive resistors 5 are used, which are arranged in a regular hexagonal pressure pattern opposite to each other. The center of the membrane 4 is center-symmetrically distributed, and is respectively located on two mutually perpendicular symmetry axes of the regular hexagonal pressure membrane 4, that is, distributed at its upper, lower, left, and right positions. When the external pressure acts on the pressure film, the film undergoes elastic deformation. According to the piezoresistive effect, the two resistors at the upper and lower positions are subjected to tensile stress, and the resistance value increases, and the left and right resistors are subjected to compressive stress, and the resistance value decreases. The resistance values of the second stress-sensitive resistors 5 are equal to form a Wheatstone full-bridge detection circuit to realize external pressure detection.

The whole process of making the single silicon integrated chip of the acceleration and pressure sensor adopts the same set of photolithography plate to process through the micro-mechanical process. Referring to (a)-(h) among Fig. 3, its preferred implementation steps are as follows:

Step 1. Using a single crystal silicon substrate with an n-type (111) crystal plane, a stress-sensitive resistor is fabricated by implanting boron ions into the single crystal silicon substrate. The implantation inclination angle is 7° to 10°. The square resistance value of the battery is 82-90 ohms. Then make a surface passivation protection layer: use LPCVD to sequentially deposit low-stress silicon nitride and silicon oxide.

Step 2, using reactive ion etching process to make a plurality of grid strip release windows at equal intervals along the <111> crystal direction of the single crystal silicon substrate of the n-type (111) crystal plane on the single crystal silicon substrate, The plurality of release windows are divided into two groups to outline the outlines of the first single-crystal silicon film and the second single-crystal silicon film respectively, wherein the outline of the first single-crystal silicon film and the outline of the second single-crystal silicon film are required Both are hexagonal and the included angles between two adjacent sides are both 120°, and the depths of the two groups of release windows are respectively consistent with the required thicknesses of the first single crystal silicon film and the second single crystal silicon film. Then LPCVD deposits passivation material in the release window to make sidewall passivation protective layer. For example, LPCVD can be used to sequentially deposit low-stress silicon nitride and silicon oxide, or directly use LPCVD to deposit low-stress silicon nitride to make sidewall passivation. protective layer.

Step 3. Use the reactive ion etching process to strip the passivation material at the bottom of the release window, and then use the silicon deep reactive ion etching process to continue etching downward. The two sets of release windows are respectively etched to the required motion cavity and sealing pressure cavity depth.

Step 4: Use KOH solution or TMAH solution to laterally etch the monocrystalline silicon substrate at the root of the side wall of the release window, thereby making a movement cavity and a pressure chamber embedded in the monocrystalline silicon substrate, and releasing the first monocrystalline silicon film and the second monocrystalline silicon film, and LPCVD deposits polysilicon in the release window to sew the release window to complete the sealing of the pressure cavity in the pressure sensor, and then removes excess polysilicon on the silicon surface by using silicon deep reactive ion etching technology.

Step 5. Use 150°C and 85% phosphoric acid to etch and remove part of the surface silicon nitride passivation protection layer (silicon nitride can also be retained as a device insulating layer), then make ohmic contact areas and lead holes, sputter aluminum films and form leads and pads.

Step 6: Fabricate a copper block on the first single crystal silicon film, and complete the copper electroplating of the mass block of the acceleration sensor by sputtering the titanium-tungsten-copper plating seed layer on the front side. Then photolithography is sprayed on the front side of the silicon wafer, and the movable structure of the acceleration sensor (mass block composed of the first single crystal silicon film and copper block and the elastic cantilever beam) is released by using silicon deep reactive ion etching technology.

Step 7. Make a cover silicon wafer with a concave cavity, and use BCB (Benzocyclobuene) glue to paste the cover silicon wafer on the monocrystalline silicon substrate, so that the cover silicon wafer covers the mass block and the elastic cantilever beam, and its concave cavity The airtight cavity is formed by the cavity and the motion cavity, and the manufacture of the entire integrated chip is completed. Finally, dicing and testing are carried out.

Fig. 4 and Fig. 5 are SEM physical pictures of the acceleration sensor and the pressure sensor in the integrated chip produced in this embodiment, respectively. Fig. 6 and Fig. 7 are the test curves of the acceleration sensor and the pressure sensor in the integrated chip produced in this embodiment, respectively. It can be seen from the figure that all functional components on the integrated chip are located on one side of the single chip, and the other side of the single chip does not participate in the process of manufacturing. The processed chip is easy to package, and has the advantages of small size, low cost, high sensitivity, good stability, and good precision. Features, suitable for mass production.

The above-mentioned embodiments only illustrate the principles and functions of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can make modifications to the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be listed in the claims.

Claims (14)

1. An acceleration and pressure sensor single silicon chip integrated chip is characterized in that, comprising: a single crystal silicon substrate and an acceleration sensor and a pressure sensor that are all integrated on the single crystal silicon substrate; The sheet is a single crystal silicon substrate with a (111) crystal plane; the acceleration sensor and the pressure sensor are integrated on the same surface of the single crystal silicon substrate; wherein, The acceleration sensor includes: a mass block, the metal block in the acceleration sensor is a copper block with a thickness of 20 μm to 30 μm, an elastic cantilever beam connected to the mass block, and a first stress-sensitive cantilever beam located on the elastic cantilever beam. Resistance, a reference resistance located on the surface of the monocrystalline silicon substrate, a movement cavity embedded in the monocrystalline silicon substrate located around the mass block and the elastic cantilever beam, and a cover silicon wafer with a concave cavity; The cover silicon wafer covers the mass block and the elastic cantilever beam, so that the movement cavity cooperates with the concave cavity to form a closed cavity; the mass block is composed of the first single crystal silicon film and the first single crystal silicon film Composed of a metal block on a silicon film; the first stress-sensitive resistor is connected to the reference resistor to form an acceleration detection circuit; The pressure sensor includes: a second single crystal silicon film, a plurality of second stress-sensitive resistors located on the second single crystal silicon film, and a single crystal embedded under the second single crystal silicon film A sealed pressure cavity in the silicon substrate; the plurality of second stress-sensitive resistors are connected to form a pressure detection circuit. 2. The acceleration and pressure sensor single-silicon integrated chip according to claim 1, characterized in that: the first stress-sensitive resistor and the second stress-sensitive resistor are both single-crystal silicon stress-sensitive resistors. 3. Acceleration and pressure sensor single-silicon integrated chip according to claim 1, characterized in that: the first single-crystal silicon film and the second single-crystal silicon film are both hexagonal, and the included angle between two adjacent sides is Both are 120°. 4. The single-silicon integrated chip of the acceleration and pressure sensor according to claim 3, wherein the acceleration sensor is provided with two elastic cantilever beams and two first elastic cantilever beams respectively located on the two elastic cantilever beams. A stress-sensitive resistor, and two reference resistors are provided; the two reference resistors are connected with the two first stress-sensitive resistors to form a half-bridge detection circuit. 5. According to the described acceleration and pressure sensor single-silicon integrated chip of claim 3, it is characterized in that: the pressure sensor is provided with four second stress-sensitive resistors, which are respectively paired by the second single-crystal silicon thin film The centers of are distributed centrally symmetrically, and are respectively located on two mutually perpendicular symmetry axes of the second single crystal silicon thin film; four of the second stress-sensitive resistors are connected to form a Wheatstone full-bridge detection circuit. 6. A method for manufacturing the acceleration and pressure sensor single silicon integrated chip as claimed in any one of claims 1 to 5, characterized in that it comprises the following steps: Step 1, adopting the method of ion implantation to fabricate stress-sensitive resistors on the single crystal silicon substrate, and then fabricate a surface passivation protection layer; Step 2. Using reactive ion etching technology to make multiple release windows at intervals on the single crystal silicon substrate, the multiple release windows are divided into two groups to outline the desired first single crystal silicon film and the second single crystal silicon film respectively. profile, the depths of the two sets of release windows are respectively consistent with the thicknesses of the required first single-crystal silicon film and the second single-crystal silicon film; then deposit a passivation material in the release window to make a sidewall passivation protection layer; Step 3. Use the reactive ion etching process to strip the passivation material at the bottom of the release window, and then use the silicon deep reactive ion etching process to continue etching downward. The two sets of release windows are respectively etched to the required motion cavity and sealing pressure cavity depth; Step 4: Etching the monocrystalline silicon substrate laterally through the release window using a wet etching process, so as to create a movement cavity and a pressure chamber embedded in the monocrystalline silicon substrate, and release the first monocrystalline silicon film and the second monocrystalline silicon film. crystalline silicon film, and by depositing polysilicon in the release window to sew the release window to complete the sealing of the pressure cavity in the pressure sensor; Step 5, removing part of the surface passivation protection layer, making ohmic contact areas and lead holes, and forming leads and pads; Step 6, making a metal block on the first single crystal silicon film, and then using an etching process to release the mass block composed of the first single crystal silicon film and the metal block, and release the elastic cantilever beam; Step 7. Make a cover silicon wafer with a concave cavity, and use BCB glue to paste the cover silicon wafer on the monocrystalline silicon substrate, so that the cover silicon wafer covers the mass block and the elastic cantilever beam, and the cavity and the movement The cavity forms a closed cavity to complete the fabrication of the entire integrated chip. 7 . The method for manufacturing a single silicon integrated chip for acceleration and pressure sensors according to claim 6 , wherein the single crystal silicon substrate is a single crystal silicon substrate with an n-type (111) crystal plane. 8. according to the manufacture method of the described acceleration of claim 6 and pressure sensor single silicon chip integrated chip, it is characterized in that: step 1 makes stress For the sensitive resistor, the inclination angle of injection is 7°-10°, and the square resistance value of the stress-sensitive resistor is 82-90 ohms. 9. The manufacturing method of the single-silicon integrated chip of the acceleration and pressure sensor according to claim 6, characterized in that: step 1 utilizes a low-pressure chemical vapor deposition process to sequentially deposit low-stress silicon nitride and silicon oxide to make surface passivation protection layer. 10. The manufacturing method of the single-silicon integrated chip of the acceleration and pressure sensor according to claim 6, characterized in that: in step 2, the <111> crystal direction of the single-crystal silicon substrate along the n-type (111) crystal plane, etc. Making a plurality of grid strip-type release windows at intervals, the plurality of release windows are divided into two groups to outline the outlines of the first single-crystal silicon film and the second single-crystal silicon film respectively, so that the first single-crystal silicon film and the second single-crystal silicon film The contours of the second single crystal silicon thin film are all hexagonal and the included angles between two adjacent sides are both 120°. 11. The manufacturing method of the single-silicon integrated chip of the acceleration and pressure sensor according to claim 6, characterized in that: in step 2, low-pressure chemical vapor deposition process is used to sequentially deposit low-stress silicon nitride and silicon oxide, or directly use low-pressure chemical vapor deposition A vapor deposition process deposits low-stress silicon nitride to create a sidewall passivation protection layer. 12. The manufacturing method of the acceleration and pressure sensor single silicon chip integrated chip according to claim 6, characterized in that in step 4, the single crystal silicon substrate is laterally etched from the inside of the single crystal silicon substrate with KOH solution or TMAH solution. 13. The method for manufacturing an acceleration and pressure sensor single-silicon integrated chip according to claim 6, characterized in that in step 4, a low-stress polysilicon seam release window is deposited by a low-pressure chemical vapor deposition process. 14. The manufacturing method of the single-silicon integrated chip of the acceleration and pressure sensor according to claim 6, characterized in that: the metal block in step 6 is a copper block, and the copper electroplating is completed by sputtering the copper electroplating seed layer, so that at the A copper block is fabricated on a single crystal silicon film.