CN102476786B - Single silicon chip integrated chip combining acceleration sensor and pressure sensor and manufacturing method of single silicon chip integrated chip - Google Patents
Single silicon chip integrated chip combining acceleration sensor and pressure sensor and manufacturing method of single silicon chip integrated chip Download PDFInfo
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Abstract
The invention relates to a single silicon chip integrated chip combining an acceleration sensor and a pressure sensor and a manufacturing method of the single silicon chip integrated chip. The single silicon chip integrated chip comprises a single crystal silicon substrate and an acceleration sensor and a pressure sensor both integrated on the single crystal silicon substrate. The acceleration sensor and the pressure sensor are integrated on the same surface of the single crystal silicon substrate through adopting a single silicon chip single-side micro-processing method; a single crystal silicon thin film with a uniform and controllable thickness and an embedded cavity are formed through adopting the side wall root transversal etching technology, and pressure resistance is reasonably distributed on the upper surface of the single crystal silicon thin film to manufacture the pressure sensor; and the acceleration sensor adopts double cantilever beams and a mass block, both the mass block and the cantilever beams are processed and released through the follow-up optional galvanizing and etching to the single crystal silicon thin film, and the quality of the mass block is increased through adopting an electrocoppering method, so as to improve sensitivity. The single silicon chip integrated chip disclosed by the invention has the advantages that the structure is simple; and a non-bonding single silicon chip micro-machinery technology is adopted to realize the manufacturing of a single-side structure of the integrated chip, thereby meeting the requirements on small dimension, low cost and mass production of the sensor chip in TPMS (Tire Pressure Monitor System) application.
Description
Technical field
The present invention relates to a kind of chip and the preparation method that are integrated with acceleration transducer and pressure sensor, especially a kind of acceleration of single silicon-chip monohedron micromachined and pressure sensor integrated chip and preparation method, can be used for TPMS (tire inflation pressure determining system), belong to silicon micro mechanical sensor technical field.
Background technology
In the fields such as Aero-Space, industrial automatic control, automotive electronics, navigation and consumer electronics, need acceleration measurement, pressure and other parameters simultaneously.As in automobile TPMS (tire inflation pressure determining system), the each pressure sensor of taking turns tyre cavity of installation is utilized to detect tire pressure situation in real time, and each tire pressure condition information is fed back to control panel show in real time and monitor, guarantee that automotive safety runs.When tire pressure is too low or have Seepage to exist, system can automatic alarm.Be provided with acceleration sensor module in tire, acceleration transducer, for whether detecting automobile in traveling, utilizes it to the sensitiveness of motion, realizes moving vehicle and immediately start shooting, enter System self-test, automatically wake up simultaneously.During galloping, cycle detection time is determined by movement velocity automated intelligent, and judged monitoring the safe period in vehicle traveling process, sensitive periods and critical days and making early warning by assistant software, to shorten the circling measurment cycle gradually and improve pre-alerting ability thus reduce system power dissipation widely.
Current, TPMS integrated chip structure based on piezoresistive detection mainly contains following two kinds: (1) utilizes the two-sided micro-processing method of silicon chip in conjunction with bonding fabrication techniques integrated chip, namely adopts two step anisotropic wet etch methods mineralization pressure film and mass respectively.To be closed by silicon-silicon bond or silicon on glass bonding makes the reference pressure cavity of pressure sensor and the support structure framework of acceleration transducer, finally recycle front side of silicon wafer dry etching release movable structure.[Xu?J?B，Zhao?Y?L，Jiang?Z?D?et?al.A?monolithic?siliconmulti-sensor?for?measuring?three-axis?acceleration，pressure?and?temperature?Journalof?Mechanical?Science?and?Technology，2008，22：731-739]。(2) pressure sensor sensitive thin film is made up of LPCVD (low-pressure chemical vapor deposition) deposited thin film material, such as: low stress SiNx, polysilicon etc., makes polysilicon piezo-resistance and form testing circuit above film; Acceleration transducer adopts thermal convection principle to realize detecting [Wang Q, Li X X, Li T, Bao M M, et al.A novel monolithicallyintegrated pressure, accelerometer and temperature composite sensor Transducers2009, Denver, CO, USA.2009:1118-1121].The first frame mode above-mentioned mainly adopts silicon body micromechanical process to make, adopt two step back side KOH to etch thinning silicon chip and high temperature bonding and make the cavity of pressure sensor and acceleration transducer cantilever beam and mass, this production method not only makes the chip size after processing bigger than normal, add production cost, and after processing, pressure film is in uneven thickness, affects Sensor Output Characteristic.Simultaneously, the residual stress that thermal mismatching in bonding process between different materials causes also can produce larger impact [Kovacs GTA to Sensor temperature drift, Maluf NI, Petersen KE.Bulk micromachining of silicon, P IEEE, 1998,86 (8): 1536 ~ 1551].The second frame mode adopts surface micromechanical process to substitute body micromechanical process, by adopting low stress SiNx or the larger deposit film of other Young's modulus as the sensitive structure layer of pressure sensor, solve the problem that bulk silicon micro mechanic film processed is in uneven thickness.And after processing, overall dimensions is less, can effectively cut down finished cost.But, because it processes detection resistance by the method for polysilicon doping, and polysilicon resistance piezoresistance coefficient is much smaller than monocrystalline silicon, and piezoresistance coefficient is about 1/2nd of monocrystalline silicon piezoresistance coefficient, therefore sensitivity is on the low side, is unsuitable in high-sensitivity detection applications.Also having is exactly need to carry out releasing structure by wet etching sacrifice layer due to the sensor of this structure, is easy to cause film to stick inefficacy, and owing to being subject to thin film deposition restriction, not easily makes wide range pressure sensor.
Given this, the present invention proposes a kind of acceleration based on single silicon-chip and pressure sensor integrated chip structure and preparation method thereof newly.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of acceleration and pressure sensor single silicon-chip integrated chip and preparation method, multi-sensor chip Integrated manufacture can be realized, and then realize the microminaturization of chip, meet the requirement that chip is produced low-costly and in high volume.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of acceleration and pressure sensor single silicon-chip integrated chip, comprising: one piece of monocrystalline silicon substrate and the acceleration transducer be all integrated on described monocrystalline silicon substrate and pressure sensor;
Described acceleration transducer and pressure sensor are integrated in the same surface of described monocrystalline silicon substrate; Wherein,
Described acceleration transducer comprises: mass, the elastic cantilever be connected with described mass, be positioned at the first stress sensitive resistance on described elastic cantilever, be positioned at the reference resistance on described monocrystalline silicon substrate surface, be positioned at the motion cavity being embedded in described monocrystalline silicon substrate around described mass and elastic cantilever, and there is the cover plate silicon chip of cavity; Described cover plate silicon chip covers outside mass and elastic cantilever, described motion cavity is coordinated with cavity and forms airtight cavity; Described mass is made up of the first monocrystalline silicon thin film and the metal derby be positioned on described first monocrystalline silicon thin film; Described first stress sensitive resistance and described reference resistance connect into acceleration detection circuit;
Described pressure sensor comprises: the second monocrystalline silicon thin film, multiple the second stress sensitive resistance be positioned on described second monocrystalline silicon thin film, and is positioned at the sealing load chamber being embedded in described monocrystalline silicon substrate under described second monocrystalline silicon thin film; Described multiple second stress sensitive resistance connects into pressure detection circuit.
As preferred version of the present invention, described first stress sensitive resistance and the second stress sensitive resistance are monocrystalline silicon stress sensitive resistance.
As preferred version of the present invention, described monocrystalline silicon substrate is the monocrystalline silicon substrate of (111) crystal face.
As preferred version of the present invention, described first monocrystalline silicon thin film and the second monocrystalline silicon thin film are hexagon, and the angle on adjacent both sides is 120 °.
As preferred version of the present invention, described acceleration transducer is provided with two described elastic cantilevers and two the first stress sensitive resistance laid respectively on two described elastic cantilevers, and is provided with two described reference resistances; Two described reference resistances and two described first stress sensitive resistance connect into half-bridge testing circuit.
As preferred version of the present invention, the metal derby in described acceleration transducer is copper billet, and thickness is 20 μm ~ 30 μm.
As preferred version of the present invention, described pressure sensor is provided with four the second stress sensitive resistance, center with described second monocrystalline silicon thin film facing each other is centrosymmetric distribution respectively, and laying respectively on two orthogonal symmetry axis of described second monocrystalline silicon thin film, four described second stress sensitive resistance connect into Hui Sidun full-bridge testing circuit.
In addition, the present invention also provides the preparation method of a kind of above-mentioned acceleration and pressure sensor single silicon-chip integrated chip, comprises the following steps:
The method of step one, employing ion implantation makes stress sensitive resistance on monocrystalline silicon substrate, then makes surface passivation protective layer;
Step 2, utilize the multiple release window of reactive ion etching process making at interval on monocrystalline silicon substrate, multiple release window is divided into two groups of profiles sketching the contours of required first monocrystalline silicon thin film and the second monocrystalline silicon thin film respectively, the degree of depth of two groups of release windows respectively with the consistency of thickness of required first monocrystalline silicon thin film and the second monocrystalline silicon thin film; Then in release window, deposit passivating material and make side wall passivation protective layer;
Step 3, utilize reactive ion etching process to peel off the passivating material of release bottom of window, and then utilize silicon deep reaction ion etch process to continue etching downwards, two groups of release windows are etched to the degree of depth in required motion cavity and sealing load chamber respectively;
Step 4, utilize wet-etching technology lateral encroaching monocrystalline silicon substrate by release window, thus make the motion cavity that is embedded in monocrystalline silicon substrate and pressure cavity, discharge the first monocrystalline silicon thin film and the second monocrystalline silicon thin film; And sew up release window by deposit spathic silicon in release window, complete the sealing of pressure cavity in pressure sensor;
Step 5, removal part surface passivation protection layer, make ohmic contact regions and fairlead, and form lead-in wire and pad;
Step 6, on the first monocrystalline silicon thin film, make metal derby, then utilize etching technics to discharge the mass be made up of the first monocrystalline silicon thin film and metal derby, and discharge elastic cantilever;
Step 7, making have the cover plate silicon chip of cavity, and utilize BCB (Benzocyclobuene) glue to be pasted onto on monocrystalline silicon substrate by described cover plate silicon chip, make cover plate silicon chip covering quality block and elastic cantilever, its cavity and motion cavity form closed cavity, complete the making of whole integrated chip.
As preferred version of the present invention, described monocrystalline silicon substrate adopts the monocrystalline silicon substrate of N-shaped (111) crystal face.
As preferred version of the present invention, step one makes stress sensitive resistance by the method for carrying out boron ion implantation to the monocrystalline silicon substrate of N-shaped (111) crystal face, injecting inclination angle is 7 ° ~ 10 °, and the square resistance of stress sensitive resistance is 82 ~ 90 ohm.
As preferred version of the present invention, step one utilizes the method for low-pressure chemical vapor deposition process (LPCVD) sequential aggradation low stress SiNx and silica to make surface passivation protective layer.
As preferred version of the present invention, make multiple grid long strip type release window equally spacedly along the <111> crystal orientation of the monocrystalline silicon substrate of N-shaped (111) crystal face in step 2, described multiple release window is divided into two groups of profiles sketching the contours of the first monocrystalline silicon thin film and the second monocrystalline silicon thin film respectively, makes the profile of the first monocrystalline silicon thin film and the second monocrystalline silicon thin film be hexagon and the angle on adjacent both sides is 120 °.
As preferred version of the present invention, in step 2, utilize low-pressure chemical vapor deposition process sequential aggradation low stress SiNx and silica, or directly utilize low-pressure chemical vapor deposition process to deposit low stress SiNx, thus produce side wall passivation protective layer.
As preferred version of the present invention, in step 4, utilize KOH solution or TMAH solution from monocrystalline silicon substrate inner transverse corrosion monocrystalline silicon substrate.
As preferred version of the present invention, utilize low-pressure chemical vapor deposition process to deposit low stress polysilicon in step 4 and sew up release window.
As preferred version of the present invention, metal derby described in step 6 is copper billet, by sputtering copper plating seed layer, completes copper plating, thus make copper billet on the first monocrystalline silicon thin film.
Compared to prior art, beneficial effect of the present invention is: the present invention adopts the same set of single silicon-chip micromechanical process of nonbonding to be integrated on the same surface of same silicon single crystal wafer by single-sided process by pressure sensor and acceleration transducer, structure is simple, be skillfully constructed, can be applicable in TPMS system, complete the detection to acceleration and each parameter of pressure.The present invention not only solves heat when between the pressure drag type pressure and oversize, the different bonding material of acceleration transducer integrated chip of precursor silicon micromachined and does not match well the problem of caused residual stress and pressure sensor uneven film thickness, but also there is advantage specific to surface micromachined, chip after processing is convenient to encapsulation, there is the features such as size is little, cost is low, highly sensitive, good stability, precision are good, be suitable for producing in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the three-dimensional structure schematic diagram of acceleration in embodiment and pressure sensor single silicon-chip integrated chip.
Fig. 2 is the three-dimensional structure schematic cross-section of acceleration in embodiment and pressure sensor single silicon-chip integrated chip.
Fig. 3 is the fabrication processing figure of acceleration in embodiment and pressure sensor single silicon-chip integrated chip, and wherein (a) makes stress sensitive resistance; (b) etching release window; C () structure side wall is protected and is processed and sacrifices gap; The horizontal wet etching of (d) sidewall root; E () sews up release window; (f) processing lead-in wire; (g) plating acceleration transducer copper billet; (h) BCB bonding packaging.
Fig. 4 is the acceleration transducer SEM picture in kind in embodiment.
Fig. 5 is the pressure sensor SEM picture in kind in embodiment.
Fig. 6 is the acceleration transducer test curve in embodiment.
Fig. 7 is the pressure sensor test curve in embodiment.
In figure, each description of reference numerals is as follows:
1---acceleration transducer;
2---pressure sensor;
3---lead-in wire and pad;
4---regular hexagonal pressure film;
5---the stress sensitive resistance of pressure sensor;
61---the stress sensitive resistance of acceleration transducer;
62---the reference resistance of acceleration transducer;
6---the elastic cantilever of acceleration transducer;
7---the mass of acceleration transducer, that is silicon island (electroplated by copper and form);
8---movable gap;
9---sealing load chamber;
10---the normal direction movement clearance of acceleration transducer.
Detailed description of the invention
Below with reference to accompanying drawing, the present invention is described in further detail.
The present embodiment makes a kind of acceleration and pressure sensor single silicon-chip integrated chip, and as depicted in figs. 1 and 2, this chip comprises: one piece of monocrystalline silicon substrate and the acceleration transducer 1 be all integrated on described monocrystalline silicon substrate and pressure sensor 2; Described acceleration transducer 1 and pressure sensor 2 are integrated in the same surface of described monocrystalline silicon substrate.
Wherein, described acceleration transducer 1 comprises: mass 7, the elastic cantilever 6 be connected with described mass 7, be positioned at the first stress sensitive resistance 61 on described elastic cantilever 6, be positioned at the reference resistance 62 on described monocrystalline silicon substrate surface, be arranged in the motion cavity (the movable gap 8 of Fig. 1-2 and normal direction movement clearance 10 component movement cavity) being embedded in described monocrystalline silicon substrate around described mass 7 and elastic cantilever 6, and there is the cover plate silicon chip (not shown) of cavity; Described cover plate silicon chip covers outside mass and elastic cantilever, described motion cavity is coordinated with cavity and forms airtight cavity; Described mass 7 is made up of the first monocrystalline silicon thin film and the metal derby be positioned on described first monocrystalline silicon thin film, and metal derby is preferably copper billet; Described first stress sensitive resistance 61 connects into acceleration detection circuit with described reference resistance 62.Wherein, the first monocrystalline silicon thin film mainly plays supporting role during follow-up plating copper billet, and copper billet thickness is 20 μm ~ 30 μm, is mainly used in the quality increasing mass, improves the output characteristics of acceleration transducer.
Described pressure sensor comprises: the second monocrystalline silicon thin film (the regular hexagonal pressure film 4 namely in Fig. 1-2), multiple the second stress sensitive resistance 5 be positioned on described second monocrystalline silicon thin film, and be positioned at the sealing load chamber 9 being embedded in described monocrystalline silicon substrate under described second monocrystalline silicon thin film; Described multiple second stress sensitive resistance 5 connects into pressure detection circuit.
In the present embodiment, preferably, adopt N-shaped (111) crystal face silicon chip to carry out single silicon-chip one side micromechanics as monocrystalline silicon substrate and make, form monocrystalline silicon thin film and embedded cavity body structure by the horizontal wet etching of monocrystalline silicon sidewall root.Described first stress sensitive resistance and the second stress sensitive resistance are monocrystalline silicon stress sensitive resistance, have higher sensitivity relative to polysilicon piezo-resistance; First monocrystalline silicon thin film and the second monocrystalline silicon thin film are hexagon, and the angle on adjacent both sides is 120 °.
Acceleration transducer preferably adopts double cantilever beam and mass block structure, namely two described elastic cantilevers 6 and two the first stress sensitive resistance 61 laid respectively on two described elastic cantilevers 6 are provided with, and be provided with two reference resistances 62 laid respectively at outside two elastic cantilevers, two described elastic cantilevers are parallel to each other, and arrange axisymmetricly with the symmetry axis of the first monocrystalline silicon thin film, two described reference resistances 62 and two described first stress sensitive resistance 61 connect into half-bridge testing circuit.Wherein, the resistance equal and opposite in direction of the first stress sensitive resistance 61 and reference resistance 62, is 3.5k Ω-6.5k Ω scope.The consistency of thickness of the first monocrystalline silicon thin film and the second monocrystalline silicon thin film during making, by increasing the quality of mass at the first monocrystalline silicon thin film surface selective electroplating copper billet and improve the detection sensitivity of sensor.When acceleration transducer is subject to external acceleration effect, two are detected cantilever beam and produce elastic deformation under external force, correspondingly, be positioned at the first stress sensitive resistance tension (or pressurized) of cantilever beam upper surface root position, according to piezoresistive effect, the corresponding increase of resistance (or reduction) of the first stress sensitive resistance, realizes outside acceleration detection by forming half-bridge testing circuit with two reference resistances.
Pressure sensor is according to the stress distribution of thin film region, make full use of longitudinal piezoresistive effect design pressure drag arrangement mode of resistor stripe, preferably, have employed four the second stress sensitive resistance 5, center with regular hexagonal pressure film 4 facing each other is centrosymmetric distribution respectively, and lay respectively on two orthogonal symmetry axis of regular hexagonal pressure film 4, be namely distributed in its position up and down.When external pressure acts on pressure film, film generation elastic deformation, according to piezoresistive effect, upper-lower position two resistance are owing to being subject to tension, and resistance increases, and two, left and right resistance is subject to compression, resistance reduces, these four the second stress sensitive resistance 5 resistances are equal, and composition Hui Sidun full-bridge testing circuit, realizes outside pressure detecting.
The whole technical process making this acceleration and pressure sensor single silicon-chip integrated chip adopts same set of reticle to be processed by micromechanical process.Referring to (a) in Fig. 3-(h), its preferred implementation step is as follows:
The monocrystalline silicon substrate of step one, employing N-shaped (111) crystal face, stress sensitive resistance is made by the method for carrying out boron ion implantation to this monocrystalline silicon substrate, injecting inclination angle is 7 ° ~ 10 °, and the square resistance of stress sensitive resistance is 82 ~ 90 ohm.Then surface passivation protective layer is made: utilize LPCVD sequential aggradation low stress SiNx and silica.
Step 2, utilize reactive ion etching process on monocrystalline silicon substrate, make multiple grid long strip type release window equally spacedly along the <111> crystal orientation of the monocrystalline silicon substrate of N-shaped (111) crystal face, described multiple release window is divided into two groups of profiles sketching the contours of the first monocrystalline silicon thin film and the second monocrystalline silicon thin film respectively, wherein, the required profile of the first monocrystalline silicon thin film and the profile of the second monocrystalline silicon thin film is hexagon and the angle on adjacent both sides is 120 °, the degree of depth of two groups of release windows respectively with the consistency of thickness of required first monocrystalline silicon thin film and the second monocrystalline silicon thin film.Then in release window, LPCVD deposits passivating material and makes side wall passivation protective layer, such as, can utilize LPCVD sequential aggradation low stress SiNx and silica, or directly utilizes LPCVD to deposit low stress SiNx, thus produces side wall passivation protective layer.
Step 3, utilize reactive ion etching process to peel off the passivating material of release bottom of window, and then utilize silicon deep reaction ion etch process to continue etching downwards, two groups of release windows are etched to the degree of depth in required motion cavity and sealing load chamber respectively.
Step 4, release window sidewall root utilize KOH solution or TMAH solution lateral encroaching monocrystalline silicon substrate, thus make the motion cavity and pressure cavity that are embedded in monocrystalline silicon substrate, discharge the first monocrystalline silicon thin film and the second monocrystalline silicon thin film, and sew up release window by LPCVD deposit spathic silicon in release window, complete the sealing of pressure cavity in pressure sensor, then, silicon deep reaction ion etching technology is adopted to remove the unnecessary polysilicon of silicon face.
Step 5, employing 150 DEG C, 85% phosphoric acid corrosion removes part surface silicon nitride passivation protective layer (silicon nitride can also retain as device isolation layer), then makes ohmic contact regions and fairlead, and sputtered aluminum film is also formed and goes between and pad.
Step 6, on the first monocrystalline silicon thin film, make copper billet, can front sputtered titanium tungsten copper plating seed layer be passed through, complete the copper plating of acceleration transducer mass.Then in the photoetching of front side of silicon wafer glue spraying, silicon deep reaction ion etching technology is utilized to discharge acceleration transducer movable structure (mass be made up of the first monocrystalline silicon thin film and copper billet and release elastic cantilever).
Step 7, making have the cover plate silicon chip of cavity, and utilize BCB (Benzocyclobuene) glue to be pasted onto on monocrystalline silicon substrate by described cover plate silicon chip, make cover plate silicon chip covering quality block and elastic cantilever, its cavity and motion cavity form closed cavity, complete the making of whole integrated chip.Finally carry out scribing and test.
Fig. 4, Fig. 5 are the SEM picture in kind of acceleration transducer and pressure sensor in the integrated chip of the present embodiment making respectively.Fig. 6, Fig. 7 are the test curve of acceleration transducer and pressure sensor in the integrated chip of the present embodiment making respectively.As seen from the figure, on this integrated chip, all functions parts are all positioned at single-chip one side, and single-chip another side does not participate in technique and makes, and the chip after processing is convenient to encapsulation, there is the features such as size is little, cost is low, highly sensitive, good stability, precision are good, be suitable for producing in enormous quantities.
Above-described embodiment only listing property illustrates principle of the present invention and effect, but not for limiting the present invention.Any person skilled in the art person all can without departing from the spirit and scope of the present invention, modify to above-described embodiment.Therefore, the scope of the present invention, should listed by claims.
Claims (14)
1. acceleration and a pressure sensor single silicon-chip integrated chip, is characterized in that, comprising: one piece of monocrystalline silicon substrate and the acceleration transducer be all integrated on described monocrystalline silicon substrate and pressure sensor; Described monocrystalline silicon substrate is the monocrystalline silicon substrate of (111) crystal face; Described acceleration transducer and pressure sensor are integrated in the same surface of described monocrystalline silicon substrate; Wherein,
Described acceleration transducer comprises: mass, metal derby in described acceleration transducer is copper billet, thickness is 20 μm ~ 30 μm, the elastic cantilever be connected with described mass, be positioned at the first stress sensitive resistance on described elastic cantilever, be positioned at the reference resistance on described monocrystalline silicon substrate surface, be positioned at the motion cavity being embedded in described monocrystalline silicon substrate around described mass and elastic cantilever, and there is the cover plate silicon chip of cavity; Described cover plate silicon chip covers outside mass and elastic cantilever, described motion cavity is coordinated with cavity and forms airtight cavity; Described mass is made up of the first monocrystalline silicon thin film and the metal derby be positioned on described first monocrystalline silicon thin film; Described first stress sensitive resistance and described reference resistance connect into acceleration detection circuit;
Described pressure sensor comprises: the second monocrystalline silicon thin film, multiple the second stress sensitive resistance be positioned on described second monocrystalline silicon thin film, and is positioned at the sealing load chamber being embedded in described monocrystalline silicon substrate under described second monocrystalline silicon thin film; Described multiple second stress sensitive resistance connects into pressure detection circuit.
2. acceleration and pressure sensor single silicon-chip integrated chip according to claim 1, is characterized in that: described first stress sensitive resistance and the second stress sensitive resistance are monocrystalline silicon stress sensitive resistance.
3. acceleration and pressure sensor single silicon-chip integrated chip according to claim 1, is characterized in that: described first monocrystalline silicon thin film and the second monocrystalline silicon thin film are hexagon, and the angle on adjacent both sides is 120 °.
4. acceleration and pressure sensor single silicon-chip integrated chip according to claim 3, it is characterized in that: described acceleration transducer is provided with two described elastic cantilevers and two the first stress sensitive resistance laid respectively on two described elastic cantilevers, and is provided with two described reference resistances; Two described reference resistances and two described first stress sensitive resistance connect into half-bridge testing circuit.
5. acceleration and pressure sensor single silicon-chip integrated chip according to claim 3, it is characterized in that: described pressure sensor is provided with four the second stress sensitive resistance, center with described second monocrystalline silicon thin film facing each other is centrosymmetric distribution respectively, and lays respectively on two orthogonal symmetry axis of described second monocrystalline silicon thin film; Four described second stress sensitive resistance connect into Hui Sidun full-bridge testing circuit.
6. a preparation method for the acceleration as described in claim 1 to 5 any one and pressure sensor single silicon-chip integrated chip, is characterized in that, comprise the following steps:
The method of step one, employing ion implantation makes stress sensitive resistance on monocrystalline silicon substrate, then makes surface passivation protective layer;
Step 2, utilize the multiple release window of reactive ion etching process making at interval on monocrystalline silicon substrate, multiple release window is divided into two groups of profiles sketching the contours of required first monocrystalline silicon thin film and the second monocrystalline silicon thin film respectively, the degree of depth of two groups of release windows respectively with the consistency of thickness of required first monocrystalline silicon thin film and the second monocrystalline silicon thin film; Then in release window, deposit passivating material and make side wall passivation protective layer;
Step 3, utilize reactive ion etching process to peel off the passivating material of release bottom of window, and then utilize silicon deep reaction ion etch process to continue etching downwards, two groups of release windows are etched to the degree of depth in required motion cavity and sealing load chamber respectively;
Step 4, by release window utilize wet-etching technology lateral encroaching monocrystalline silicon substrate, thus make the motion cavity and pressure cavity that are embedded in monocrystalline silicon substrate, discharge the first monocrystalline silicon thin film and the second monocrystalline silicon thin film, and sew up release window by deposit spathic silicon in release window, complete the sealing of pressure cavity in pressure sensor;
Step 5, removal part surface passivation protection layer, make ohmic contact regions and fairlead, and form lead-in wire and pad;
Step 6, on the first monocrystalline silicon thin film, make metal derby, then utilize etching technics to discharge the mass be made up of the first monocrystalline silicon thin film and metal derby, and discharge elastic cantilever;
Step 7, making have the cover plate silicon chip of cavity, and utilize BCB glue to be pasted onto on monocrystalline silicon substrate by described cover plate silicon chip, make cover plate silicon chip covering quality block and elastic cantilever, its cavity and motion cavity form closed cavity, complete the making of whole integrated chip.
7. the preparation method of acceleration and pressure sensor single silicon-chip integrated chip according to claim 6, is characterized in that: described monocrystalline silicon substrate adopts the monocrystalline silicon substrate of N-shaped (111) crystal face.
8. the preparation method of acceleration and pressure sensor single silicon-chip integrated chip according to claim 6, it is characterized in that: step one makes stress sensitive resistance by the method for carrying out boron ion implantation to the monocrystalline silicon substrate of N-shaped (111) crystal face, injecting inclination angle is 7 ° ~ 10 °, and the square resistance of stress sensitive resistance is 82 ~ 90 ohm.
9. the preparation method of acceleration and pressure sensor single silicon-chip integrated chip according to claim 6, is characterized in that: step one utilizes the method for low-pressure chemical vapor deposition process sequential aggradation low stress SiNx and silica to make surface passivation protective layer.
10. the preparation method of acceleration and pressure sensor single silicon-chip integrated chip according to claim 6, it is characterized in that: in step 2, make multiple grid long strip type release window equally spacedly along the <111> crystal orientation of the monocrystalline silicon substrate of N-shaped (111) crystal face, described multiple release window is divided into two groups of profiles sketching the contours of the first monocrystalline silicon thin film and the second monocrystalline silicon thin film respectively, makes the profile of the first monocrystalline silicon thin film and the second monocrystalline silicon thin film be hexagon and the angle on adjacent both sides is 120 °.
The preparation method of 11. acceleration and pressure sensor single silicon-chip integrated chips according to claim 6; it is characterized in that: in step 2, utilize low-pressure chemical vapor deposition process sequential aggradation low stress SiNx and silica; or directly utilize low-pressure chemical vapor deposition process to deposit low stress SiNx, thus produce side wall passivation protective layer.
The preparation method of 12. acceleration and pressure sensor single silicon-chip integrated chips according to claim 6, is characterized in that: utilize KOH solution or TMAH solution from monocrystalline silicon substrate inner transverse corrosion monocrystalline silicon substrate in step 4.
The preparation method of 13. acceleration and pressure sensor single silicon-chip integrated chips according to claim 6, is characterized in that: utilize low-pressure chemical vapor deposition process to deposit low stress polysilicon in step 4 and sew up release window.
The preparation method of 14. acceleration and pressure sensor single silicon-chip integrated chips according to claim 6, it is characterized in that: metal derby described in step 6 is copper billet, by sputtering copper plating seed layer, complete copper plating, thus make copper billet on the first monocrystalline silicon thin film.
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